CN108663007A - A kind of device and method measuring film layer taper angle - Google Patents
A kind of device and method measuring film layer taper angle Download PDFInfo
- Publication number
- CN108663007A CN108663007A CN201810388444.5A CN201810388444A CN108663007A CN 108663007 A CN108663007 A CN 108663007A CN 201810388444 A CN201810388444 A CN 201810388444A CN 108663007 A CN108663007 A CN 108663007A
- Authority
- CN
- China
- Prior art keywords
- film layer
- thicknesses
- layers
- measuring device
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000523 sample Substances 0.000 claims abstract description 18
- 238000005259 measurement Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 description 58
- 230000003321 amplification Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/22—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring angles or tapers; for testing the alignment of axes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/02—Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/04—Display or data processing devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Abstract
The present invention provides a kind of device and method measuring film layer taper angle, the equipment includes thicknesses of layers measuring device, wire width measuring device and computing device, wherein thicknesses of layers measuring device includes probe, the differential transformer to link with probe, magnet, signal amplifier and the arithmetic element for providing horizontal direction magnetic field, differential transformer is connect with signal amplifier, signal amplifier is connect with arithmetic element, arithmetic element is used to receive sensor current signal from signal amplifier, and calculates thicknesses of layers；Wire width measuring device includes scanning electron microscope and measuring unit, and scanning electron microscope obtains film layer image for scanning film layer, and measuring unit is used to obtain line width according to film layer Image measurement；Computing device is used to calculate taper angle according to thicknesses of layers and line width.The present invention, by calculating thicknesses of layers and measuring line width, directly calculates taper angle by thicknesses of layers and line width, protects technological process integrality and progress using an equipment.
Description
Technical field
The present invention relates to field of measuring technique more particularly to a kind of device and method measuring film layer taper angle.
Background technology
In TFT（Thin Film Transistor, thin film transistor (TFT)）In the technological process of array, film layer figure taper angle
Taper Angle are an important parameters, therefore measure taper angle rapidly and in the case of not damaging tft array
This parameter is extremely important for the progress and integrality of entire technological process.In actual process flow, as shown in Figure 1, film figure
For shape 11 on the surface of glass 12,11 surface of film pattern is not smooth and regular, and measuring thicknesses of layers A and line width B all has hardly possible
Degree directly measures taper angle and more has no idea.
Invention content
In order to solve the above technical problems, the present invention provides a kind of device and method measuring film layer taper angle.
A kind of equipment measuring film layer taper angle provided by the invention, the equipment includes thicknesses of layers measuring device, line
Wide measuring device and computing device, wherein：
The thicknesses of layers measuring device measures the thickness of film layer to be measured for measuring mode using offset, obtains film
Layer thickness value；
The wire width measuring device, for being scanned progress using scanning electron microscope mode to the film layer figure to be measured
Scanning, and obtain its line width values；
The computing device is connect with the thicknesses of layers measuring device and the wire width measuring device respectively, for according to film layer
The line width values that the thicknesses of layers value and wire width measuring device that measurer for thickness obtains obtain are calculated, and the film to be measured is obtained
The taper angle in layer outside.
Further, the thicknesses of layers measuring device includes probe, the differential transformer to link with probe, offer level
Magnet, signal amplifier and the arithmetic element in direction magnetic field, the differential transformer is connect with the signal amplifier, described
Signal amplifier is connect with arithmetic element, and the arithmetic element is used to receive sensor current signal from signal amplifier, and calculates
Membrane layer thickness value.
Further, the wire width measuring device includes scanning electron microscope and measuring unit, and the scanning electron is aobvious
Micro mirror obtains film layer image for scanning the film layer to be measured, and the measuring unit according to the film layer Image measurement for obtaining
Line width values.
Further, the computing device is used to calculate the taper angle on the outside of the film layer to be measured by following formula,;
Wherein, A is that thicknesses of layers measuring device obtains thicknesses of layers value, and B is the line width values that wire width measuring device obtains.
Another aspect of the present invention provides a kind of method measuring film layer taper angle, the method includes：
The thickness of film layer to be measured is measured in such a way that thicknesses of layers measuring device is measured using offset, obtains thicknesses of layers
Value；
To being scanned to the film layer figure to be measured in such a way that wire width measuring device is using scanning electron microscope, and obtain
Its line width values；
What the thicknesses of layers value and wire width measuring device obtained according to the thicknesses of layers measuring device using computing device was obtained
Line width values are calculated, and the taper angle on the outside of the film layer to be measured is obtained.
Further, described that the thickness of film layer to be measured is carried out in such a way that thicknesses of layers measuring device is measured using offset
It measures, obtaining thicknesses of layers value is specially：
The probe of control thicknesses of layers measuring device is moved along film surface to be measured, makes the differential change to link with the probe
Depressor accordingly moves, and the magnetic field of the differential transformer septum magnet obtains sensor current signal, to the sensor current signal
It is amplified, thicknesses of layers value is calculated according to the amplified sensor current signal.
Further, it is described by wire width measuring device using in the way of scanning electron microscope to the film layer figure to be measured
Shape is scanned, and is obtained its line width values and be specially：
Using film layer to be measured described in scanning of scanning electron microscope, film layer image is obtained, institute is measured according to the film layer image volume
State the line width values of figure in film layer to be measured.
Further, the thicknesses of layers value and line width obtained according to the thicknesses of layers measuring device using computing device is surveyed
The line width values that amount device obtains are calculated, and are obtained the taper angle on the outside of the film layer to be measured and are specially：
It is calculated by following formula and obtains taper angle, ;
Wherein, A is thicknesses of layers value, and B is line width values.
Implement the present invention, has the advantages that：
It is straight by thicknesses of layers value and line width values using an equipment by directly measuring thicknesses of layers value and measuring line width values
It connects and calculates taper angle, have the characteristics that convenient, fast, can disposably obtain important parameter taper angle, realize and be not required to
It destroys in the case of film layer and calculates taper angle, protect technological process integrality and progress.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is the schematic diagram for the film layer figure that background technology provides；
Fig. 2 is the structure chart of the equipment provided by the invention for measuring film layer taper angle；
Fig. 3 is the schematic diagram of a scenario provided by the invention for measuring thicknesses of layers；
Fig. 4 is the schematic diagram of a scenario provided by the invention for measuring coating line width；
Fig. 5 is the flow chart of the method provided by the invention for measuring film layer taper angle.
Specific implementation mode
This patent core content is that various technological means is combined to test film thickness and line width, below in conjunction with attached drawing and reality
Example is applied to be described further the system specific implementation mode.
A kind of embodiment of device and method measuring film layer taper angle provided by the invention is described more fully below.
As shown in Fig. 2, a kind of equipment measuring film layer taper angle provided by the invention, the equipment include：
Thicknesses of layers measuring device 21, wire width measuring device 22 and computing device 23, the computing device 23 are thick with film layer respectively
It spends measuring device 21 and wire width measuring device 22 connects.
Wherein, thicknesses of layers measuring device 21 is used to measure mode using offset and be measured to the thickness of film layer to be measured,
Obtain thicknesses of layers value.
As a specific embodiment of the invention, thicknesses of layers measuring device 21 includes：
Probe 211, the differential transformer 212 to link with probe 211, magnet 213, the signal amplifier that horizontal direction magnetic field is provided
214 and arithmetic element 215, the differential transformer 212 connect with the signal amplifier 214, the signal amplifier 214
It is connect with arithmetic element 215, the arithmetic element 215 is used to receive sensor current signal from signal amplifier 214, calculates membrane
Layer thickness value.
Probe 211 works under scene as shown in Figure 3, and probe 211 is moved horizontally along film surface to be measured, due to table
Face it is uneven, probe 211 can be subjected to displacement in vertical direction；Above-mentioned displacement can to link with probe 211 differential
Transformer 212 is also subjected to displacement in vertical direction, and current signal, above-mentioned electricity are induced to the magnetic line of force of septum magnet 213
Signal output after the amplification of signal amplifier 214 is flowed to arithmetic element 215 to be believed according to the electric current of amplification by arithmetic element 215
Number calculate thicknesses of layers value.
The current signal that amplification is utilized in the present embodiment and the corresponding data library inquiry of thicknesses of layers value obtain the film layer
Thickness value.
Wherein, wire width measuring device 22 is for sweeping the film layer figure to be measured using scanning electron microscope mode
It retouches, and obtains its line width values.
As a specific embodiment of the invention, wire width measuring device 22 includes：
Scanning electron microscope（Scanning Electron Microscope, SEM）221 and measuring unit 222；
The SEM221 obtains film layer image for scanning film layer, and the film layer image is output to measuring unit 222, measures single
Member 222 obtains line width values in film layer Image measurement as shown in Figure 4.
Computing device 23, the thicknesses of layers value for being obtained according to thicknesses of layers measuring device 21 and wire width measuring device 22
Obtained line width values calculate the taper angle on the outside of film layer.
It should be noted that calculate film layer on the outside of taper angle method specifically, assume thicknesses of layers data value be A,
Film layer line width values are B, and taper angle can be calculated with following formula,。
Another aspect of the present invention provides a kind of method measuring film layer taper angle, the method includes：
Step S501, the thickness of film layer to be measured is measured in such a way that thicknesses of layers measuring device is measured using offset, is obtained
Obtain thicknesses of layers value.
Specific implementation is in this step S501 equipment shown in Fig. 2, controls the probe edge of thicknesses of layers measuring device
Film surface to be measured is moved, and is allowed to corresponding to the differential transformer that the probe links and is moved, the differential transformer is cut
The magnetic field for cutting magnet obtains sensor current signal, is amplified to the sensor current signal, according to the amplified induction
Current signal calculates thicknesses of layers value.
Step S502, it is carried out in such a way that wire width measuring device uses scanning electron microscope to the film layer figure to be measured
Scanning, and obtain its line width values.
This step S502 equipment specific implementations shown in Fig. 2 are, using to be measured described in scanning of scanning electron microscope
Film layer obtains film layer image, the line width values of image in the film layer to be measured is measured according to the film layer image volume.Step S503,
The line width that the thicknesses of layers value and wire width measuring device obtained according to the thicknesses of layers measuring device using computing device is obtained
Value is calculated, and the taper angle on the outside of the film layer to be measured is obtained.
This step S503 equipment specific implementations shown in Fig. 2 are to be calculated by following formula and obtain taper angle,;
Wherein, A is thicknesses of layers value, and B is line width values.
Implement the present invention, has the advantages that：
It is straight by thicknesses of layers value and line width values using an equipment by directly measuring thicknesses of layers value and measuring line width values
The taper angle calculated on the outside of film layer is connect, has the characteristics that convenient, fast, can disposably obtain important parameter taper angle,
It realizes and calculates taper angle in the case of need not destroying film layer, protect technological process integrality and progress.
One of ordinary skill in the art will appreciate that realizing all or part of flow in above-described embodiment method, being can be with
Relevant hardware is instructed to complete by computer program, the program can be stored in a computer read/write memory medium
In, the program is when being executed, it may include such as the flow of the embodiment of above-mentioned each method.Wherein, the storage medium can be magnetic
Dish, CD, read-only memory（Read-Only Memory, ROM）Or random access memory（Random Access
Memory, RAM）Deng.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
The specific implementation of the present invention is confined to these explanations.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to the present invention's
Protection domain.
Claims (8)
1. a kind of equipment measuring film layer taper angle, which is characterized in that the equipment includes thicknesses of layers measuring device, line width survey
Device and computing device are measured, wherein：
The thicknesses of layers measuring device measures the thickness of film layer to be measured for measuring mode using offset, obtains film
Layer thickness value；
The wire width measuring device, for being scanned using scanning electron microscope mode to the film layer figure to be measured, and
Obtain its line width values；
The computing device is connect with the thicknesses of layers measuring device and the wire width measuring device respectively, for according to film layer
The line width values that the thicknesses of layers value and wire width measuring device that measurer for thickness obtains obtain are calculated, and the film to be measured is obtained
The taper angle in layer outside.
2. equipment as described in claim 1, which is characterized in that the thicknesses of layers measuring device includes probe, joins with probe
Dynamic differential transformer, magnet, signal amplifier and the arithmetic element that horizontal direction magnetic field is provided, the differential transformer with
The signal amplifier connection, the signal amplifier are connect with arithmetic element, and the arithmetic element is used for from signal amplifier
Sensor current signal is received, and calculates thicknesses of layers value.
3. equipment as described in claim 1, which is characterized in that the wire width measuring device includes scanning electron microscope and survey
Unit is measured, the scanning electron microscope obtains film layer image for scanning the film layer to be measured, and the measuring unit is used for root
Line width values are obtained according to the film layer Image measurement.
4. equipment as described in claim 1, which is characterized in that the computing device is calculated by following formula and waited for described in acquisition
Survey the taper angle on the outside of film layer,；Wherein, A is that thicknesses of layers measuring device obtains thicknesses of layers value, and B is
The line width values that wire width measuring device obtains.
5. a kind of method measuring film layer taper angle, which is characterized in that the method includes：
The thickness of film layer to be measured is measured in such a way that thicknesses of layers measuring device is measured using offset, obtains thicknesses of layers
Value；
The film layer figure to be measured is scanned in such a way that wire width measuring device is using scanning electron microscope, and obtains it
Line width values；
What the thicknesses of layers value and wire width measuring device obtained according to the thicknesses of layers measuring device using computing device was obtained
Line width values are calculated, and the taper angle on the outside of the film layer to be measured is obtained.
6. method as claimed in claim 5, which is characterized in that described to use offset measurement side using thicknesses of layers measuring device
Formula measures the thickness of film layer to be measured, obtains thicknesses of layers value and is specially：
The probe of control thicknesses of layers measuring device is moved along film surface to be measured, makes the differential change to link with the probe
Depressor accordingly moves, and the magnetic field of the differential transformer septum magnet obtains sensor current signal, to the sensor current signal
It is amplified, thicknesses of layers value is calculated according to the amplified sensor current signal.
7. method as claimed in claim 5, which is characterized in that described to use scanning electron microscope using wire width measuring device
Mode is scanned the film layer figure to be measured, and obtains its line width values and be specially：
Using film layer to be measured described in scanning of scanning electron microscope, film layer image is obtained, institute is measured according to the film layer image volume
State the line width values of figure in film layer to be measured.
8. method as claimed in claim 5, which is characterized in that obtained according to the thicknesses of layers measuring device using computing device
To the obtained line width values of thicknesses of layers value and wire width measuring device calculated, obtain the taper angle on the outside of the film layer to be measured
Specially：
It is calculated by following formula and obtains taper angle, ；
Wherein, A is thicknesses of layers value, and B is line width values.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810388444.5A CN108663007A (en) | 2018-04-26 | 2018-04-26 | A kind of device and method measuring film layer taper angle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810388444.5A CN108663007A (en) | 2018-04-26 | 2018-04-26 | A kind of device and method measuring film layer taper angle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108663007A true CN108663007A (en) | 2018-10-16 |
Family
ID=63780266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810388444.5A Pending CN108663007A (en) | 2018-04-26 | 2018-04-26 | A kind of device and method measuring film layer taper angle |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108663007A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1743791A (en) * | 2004-08-31 | 2006-03-08 | 精碟科技股份有限公司 | Film Thickness Measuring Device |
| JP2007033272A (en) * | 2005-07-27 | 2007-02-08 | Mitsubishi Heavy Ind Ltd | Thin film characteristic evaluation method, thin film characteristic evaluation device, and thin film solar cell |
| CN100430683C (en) * | 2003-02-28 | 2008-11-05 | 西门子公司 | Passive magnetic position sensor and method of mounting a passive magnetic position sensor |
| CN102109771A (en) * | 2011-01-27 | 2011-06-29 | 上海宏力半导体制造有限公司 | Method for detecting semiconductor device |
| CN102853797A (en) * | 2011-06-30 | 2013-01-02 | 安徽华东光电技术研究所 | Cone film thickness testing device and manufacturing method thereof |
| CN103994741A (en) * | 2014-05-12 | 2014-08-20 | 京东方科技集团股份有限公司 | Method and device for measuring thickness of membrane |
| CN106247918A (en) * | 2016-09-07 | 2016-12-21 | 武汉华星光电技术有限公司 | A kind of probe-type film thickness measuring machine automatic knifing measuring equipment and using method thereof |
| CN107300733A (en) * | 2017-08-11 | 2017-10-27 | 深圳市华星光电技术有限公司 | COA substrates and COA substrate color blocking layer thickness detection methods |
-
2018
- 2018-04-26 CN CN201810388444.5A patent/CN108663007A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100430683C (en) * | 2003-02-28 | 2008-11-05 | 西门子公司 | Passive magnetic position sensor and method of mounting a passive magnetic position sensor |
| CN1743791A (en) * | 2004-08-31 | 2006-03-08 | 精碟科技股份有限公司 | Film Thickness Measuring Device |
| JP2007033272A (en) * | 2005-07-27 | 2007-02-08 | Mitsubishi Heavy Ind Ltd | Thin film characteristic evaluation method, thin film characteristic evaluation device, and thin film solar cell |
| CN102109771A (en) * | 2011-01-27 | 2011-06-29 | 上海宏力半导体制造有限公司 | Method for detecting semiconductor device |
| CN102853797A (en) * | 2011-06-30 | 2013-01-02 | 安徽华东光电技术研究所 | Cone film thickness testing device and manufacturing method thereof |
| CN103994741A (en) * | 2014-05-12 | 2014-08-20 | 京东方科技集团股份有限公司 | Method and device for measuring thickness of membrane |
| CN106247918A (en) * | 2016-09-07 | 2016-12-21 | 武汉华星光电技术有限公司 | A kind of probe-type film thickness measuring machine automatic knifing measuring equipment and using method thereof |
| CN107300733A (en) * | 2017-08-11 | 2017-10-27 | 深圳市华星光电技术有限公司 | COA substrates and COA substrate color blocking layer thickness detection methods |
Non-Patent Citations (2)
| Title |
|---|
| 张岩等: "《传感器应用技术》", 31 January 2006, 福建科学技术出版社 * |
| 梁庆等: "《零件数控车削加工》", 30 June 2014, 北京理工大学出版社 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104569888B (en) | A kind of utilization micro-strip collimation method calibrates the system and method for near field probes modifying factor | |
| CN114266836B (en) | Active vision 3D calibration method, system and device based on galvanometer camera | |
| US8818747B2 (en) | Calibration of a triaxial magnetic field sensor | |
| US8554503B2 (en) | Method for calibrating a thickness gauge | |
| CN101782360B (en) | Magnetoresistance sensors for position and orientation determination | |
| JP4445754B2 (en) | Method and apparatus for detecting the position of a confined object | |
| US5416411A (en) | System and method for measuring the thickness of a ferromagnetic layer | |
| JP2008539418A (en) | Soil structure detection method using potential gradient and ground resistance measurement | |
| CN101008580A (en) | Resistance type wave height gauge | |
| CN101447073A (en) | Zoom lens calibration method | |
| CN108398725B (en) | Method, system, device and storage medium for calculating transient electromagnetic apparent resistivity | |
| CN102997939B (en) | The band angle uniaxial anisotropy through adjustment in three layers of Magnetic Sensor | |
| CN110441027A (en) | A kind of modification method controlling the null offset of probe automatic tracking system | |
| Liu et al. | Touch position identification based on a flexible array-less supercapacitive tactile sensor | |
| CN116016225B (en) | Information processing method, signal positioning method, device, equipment and medium | |
| Bajracharya et al. | Numerical study on corrosion profile estimation of a corroded steel plate using eddy current | |
| Heo et al. | A new methodology for measuring coastline recession using buffering and non‐linear least squares estimation | |
| CN108663007A (en) | A kind of device and method measuring film layer taper angle | |
| Eaket et al. | Use of stereoscopy for dam break flow measurement | |
| JP3148986B2 (en) | Hull position deviation detector | |
| CN118096657A (en) | Method, device, computer equipment and medium for detecting welding defect of thermistor | |
| CN111553872A (en) | Determination method of vibration sensitive area of transformer oil tank based on NCC image matching algorithm | |
| CN111981966B (en) | Underground cable positioning method and device | |
| US20200300928A1 (en) | Device for generating a magnetic field of calibration and built-in self-calibration magnetic sensor and calibration method using the same | |
| CN106802433B (en) | Method and device for correcting formation resistivity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181016 |
|
| RJ01 | Rejection of invention patent application after publication |