CN108649922A - A kind of temperature compensating type phase shifter - Google Patents
A kind of temperature compensating type phase shifter Download PDFInfo
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- CN108649922A CN108649922A CN201810541173.2A CN201810541173A CN108649922A CN 108649922 A CN108649922 A CN 108649922A CN 201810541173 A CN201810541173 A CN 201810541173A CN 108649922 A CN108649922 A CN 108649922A
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- 238000001514 detection method Methods 0.000 claims abstract description 32
- 230000010363 phase shift Effects 0.000 claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims description 31
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- 230000000903 blocking effect Effects 0.000 claims description 6
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/16—Networks for phase shifting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/03—Details of HF subsystems specially adapted therefor, e.g. common to transmitter and receiver
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
- H01Q3/36—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
- H01Q3/38—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters the phase-shifters being digital
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
- G01S2013/0236—Special technical features
- G01S2013/0245—Radar with phased array antenna
- G01S2013/0254—Active array antenna
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Abstract
本发明涉及一种温度补偿型移相器，包括温度检测单元，移相单元和可调器件单元，其中移相器单元输入端口连接射频输入端口，移相单元输入/输出端口连接可调器件单元输出/输入端口，移相单元输出端连接射频输出端口；温度检测单元输入端口连接电压/电流源信号输入端口，温度检测单元输出端口连接可调器件单元输入端口，温度检测单元输出控制信号，可调器件单元改变对射频信号的处理并反馈至移相器单元，移相单元综合处理射频输入信号和可调器件单元反馈信号后，输出射频信号。优点：1）对整个移相器的温度特性进行补偿，实现从‑55至125℃甚至更宽温度范围内的稳定移相特性。2）可单片集成，亦可采用分立器件搭建，应用灵活，成本较低。
The invention relates to a temperature compensation type phase shifter, comprising a temperature detection unit, a phase shifting unit and an adjustable device unit, wherein the input port of the phase shifter unit is connected to the radio frequency input port, and the input/output port of the phase shifting unit is connected to the adjustable device unit The output/input port, the output port of the phase shifting unit is connected to the radio frequency output port; the input port of the temperature detection unit is connected to the voltage/current source signal input port, the output port of the temperature detection unit is connected to the input port of the adjustable device unit, and the temperature detection unit outputs a control signal, which can be The modulating device unit changes the processing of the radio frequency signal and feeds it back to the phase shifter unit, and the phase shifting unit outputs the radio frequency signal after comprehensively processing the radio frequency input signal and the feedback signal of the modulating device unit. Advantages: 1) Compensate the temperature characteristics of the entire phase shifter to achieve stable phase shift characteristics from -55 to 125°C or even a wider temperature range. 2) It can be integrated in a single chip or built with discrete devices, with flexible application and low cost.
Description
技术领域technical field
本发明是一种温度补偿型移相器，属于集成电路技术领域。The invention is a temperature compensation type phase shifter, which belongs to the technical field of integrated circuits.
背景技术Background technique
从 60 年代第一部相控阵雷达研究成功以来,相控阵天线已经广泛应用于雷达、对抗、通讯、敌我识别和探测等领域,目前各功能雷达均已采用相控阵技术，因为只有相控阵天线才能使单个雷达同时具有全固态、电扫描、多目标、多功能、作用距离大、作用时间短等各种战术要求所需要的优良性能。同时随着5G通信的到来，相控阵技术作为其关键技术，其使用将越来越广泛。移相器作为相控阵天线的核心器件，其性能对整个系统起着决定性作用，因此对移相器性能优化的研究具有广阔的市场前景和应用价值。同时，雷达应用环境温度变化剧烈，本发明可以有效解决温度变化对移相器性能的影响，提高雷达在温度跨度较大环境下工作时的精度。Since the first phased array radar was successfully researched in the 1960s, phased array antennas have been widely used in radar, countermeasures, communications, identification of friend and foe, and detection. At present, all functional radars have adopted phased array technology, because only phased The control array antenna can enable a single radar to have the excellent performance required by various tactical requirements such as all-solid-state, electronic scanning, multi-target, multi-function, large operating range, and short operating time. At the same time, with the advent of 5G communication, phased array technology, as its key technology, will be used more and more widely. As the core component of the phased array antenna, the performance of the phase shifter plays a decisive role in the whole system. Therefore, the research on the performance optimization of the phase shifter has broad market prospects and application value. At the same time, the temperature of the radar application environment changes drastically, and the invention can effectively solve the influence of the temperature change on the performance of the phase shifter, and improve the precision of the radar when working in an environment with a large temperature span.
传统的移相器电路结构如图1（a）所示，该电路由晶体管M1、M2、M3，电感L1、L2、L3组成。晶体管M1、M2、M3均工作在开关模式，Ven为高和低时的等效电路分别如图1（b）和图1（c）所示，图中Coff2和Coff3分别为晶体管M2和M3关态下的等效电容，通过两种工作模式的差别，实现信号的移相功能。The traditional phase shifter circuit structure is shown in Figure 1(a), the circuit consists of transistors M1, M2, M3, and inductors L1, L2, L3. Transistors M1, M2, and M3 all work in switch mode, and the equivalent circuits when Ven is high and low are shown in Figure 1(b) and Figure 1(c), respectively. The equivalent capacitance in the state, through the difference between the two working modes, realizes the phase shifting function of the signal.
传统的移相器电路结构具有以下缺点：1）传统的移相器由无源器件构成，晶体管工作在开关模式，温度对性能影响较大时，无法对温度影响进行补偿，不适合在高精以及温度范围变化较大的情况下应用。The traditional phase shifter circuit structure has the following disadvantages: 1) The traditional phase shifter is composed of passive devices, and the transistor works in switch mode. and applications where the temperature range varies widely.
发明内容Contents of the invention
本发明提出的是一种温度补偿型移相器，其目的是为克服传统移相器电路中存在的当晶体管工作在开关模式，温度对性能影响较大时，无法对温度影响进行补偿，不适合在高精以及温度范围变化较大的情况下应用不足的缺陷，提供一种移相性能在工作温度跨度较大时保持恒定的温度补偿型移相器。The present invention proposes a temperature-compensated phase shifter, the purpose of which is to overcome the problem that in the traditional phase shifter circuit, when the transistor works in the switch mode and the temperature has a great influence on the performance, it cannot compensate for the temperature influence, and it cannot It is suitable for the defect of insufficient application in the case of high precision and large temperature range changes, and provides a temperature compensation type phase shifter whose phase shift performance remains constant when the operating temperature span is large.
本发明的技术解决方案：一种温度补偿型移相器，包括温度检测单元，移相单元和可调器件单元，其中移相器单元的输入端连接至射频输入端口，移相单元的输入/输出端口（a）连接至可调器件单元的输出/输入端口（b），移相单元的输出端连接射频输出端口；温度检测单元输入端口连接电压/电流源信号输入端口，温度检测单元的输出端口连接可调器件单元的输入端口（c），温度检测单元根据工作温度通过输出端口输出控制信号至可调器件单元，可调器件单元根据温度检测单元输出的控制信号，调整自身参数，改变对射频信号的处理，并通过输出/输入端口反馈至移相器单元，移相单元综合处理射频输入信号和可调器件单元反馈信号后，输出射频信号至射频输出端口。Technical solution of the present invention: a temperature-compensated phase shifter, including a temperature detection unit, a phase shifter unit and an adjustable device unit, wherein the input end of the phase shifter unit is connected to the radio frequency input port, and the input/phase shifter unit The output port (a) is connected to the output/input port (b) of the adjustable device unit, the output port of the phase shifting unit is connected to the RF output port; the input port of the temperature detection unit is connected to the voltage/current source signal input port, and the output of the temperature detection unit The port is connected to the input port (c) of the adjustable device unit, and the temperature detection unit outputs a control signal to the adjustable device unit through the output port according to the working temperature. The adjustable device unit adjusts its own parameters according to the control signal output by the temperature detection unit, and changes the The RF signal is processed and fed back to the phase shifter unit through the output/input port. The phase shifter unit comprehensively processes the RF input signal and the feedback signal of the adjustable device unit, and then outputs the RF signal to the RF output port.
本发明的有益效果：Beneficial effects of the present invention:
1）利用温度检测单元输出与温度相关的控制电压，该电压控制可调器件单元的特性，从而对整个移相器的温度特性进行补偿，可以实现从-55至125℃甚至更宽温度范围内的稳定移相特性。1) Use the temperature detection unit to output a temperature-related control voltage, which controls the characteristics of the adjustable device unit, thereby compensating the temperature characteristics of the entire phase shifter, and can achieve a temperature range from -55 to 125°C or even wider stable phase-shifting characteristics.
2）可采用RF CMOS、GaN，GaAs、BiCMOS、SOI等多种工艺实现，可单片集成，亦可采用分立器件搭建，应用灵活，成本较低。2) It can be realized by various processes such as RF CMOS, GaN, GaAs, BiCMOS, SOI, etc. It can be integrated in a single chip or built with discrete devices, with flexible application and low cost.
附图说明Description of drawings
附图1是传统的移相器电路原理图。Accompanying drawing 1 is a traditional phase shifter circuit schematic diagram.
附图2是温度补偿型移相器电路方框图。Accompanying drawing 2 is a circuit block diagram of temperature compensation type phase shifter.
附图3是温度补偿型移相器电路原理图。Accompanying drawing 3 is the schematic diagram of the temperature compensation type phase shifter circuit.
附图4是采用传统电路和温度补偿型电路实现的45°移相器温度性能比较图。Accompanying drawing 4 is the comparison diagram of the temperature performance of the 45° phase shifter realized by adopting the traditional circuit and the temperature compensation circuit.
图中M1、M2、M3、M4 、P1和P2是晶体管、R1、R2、R3和R4是电阻、L1、L2和L3是电感、VC1是压控电容、C1是隔直电容、D1是二极管、VDD是电源端、Ven、Venf是控制信号端口、RFin是射频输入端口、RFou是射频输出端口、Iref是电流源信号输入端口、Vref是电压源信号输入端口，coff1、 coff2、 coff3是晶体管M1、M2和M3的关态等效电容。In the figure, M1, M2, M3, M4, P1 and P2 are transistors, R1, R2, R3 and R4 are resistors, L1, L2 and L3 are inductors, VC1 is a voltage-controlled capacitor, C1 is a DC blocking capacitor, D1 is a diode, VDD is the power supply terminal, Ven, Venf is the control signal port, RFin is the radio frequency input port, RFou is the radio frequency output port, Iref is the current source signal input port, Vref is the voltage source signal input port, coff1, coff2, coff3 are the transistor M1, Off-state equivalent capacitance of M2 and M3.
具体实施方式Detailed ways
一种温度补偿型移相器，包括温度检测单元，移相单元和可调器件单元，其中移相器单元的输入端连接至射频输入端口，移相单元的输入/输出端口（a）连接至可调器件单元的输出/输入端口（b），移相单元的输出端连接射频输出端口；温度检测单元输入端口连接电压/电流源信号输入端口，温度检测单元的输出端口连接可调器件单元的输入端口（c），温度检测单元根据工作温度通过输出端口输出控制信号至可调器件单元，可调器件单元根据温度检测单元输出的控制信号，调整自身参数，改变对射频信号的处理，并通过输出/输入端口反馈至移相器单元，移相单元综合处理射频输入信号和可调器件单元反馈信号后，输出射频信号至射频输出端口。A temperature-compensated phase shifter, including a temperature detection unit, a phase shifter unit and an adjustable device unit, wherein the input end of the phase shifter unit is connected to the radio frequency input port, and the input/output port (a) of the phase shifter unit is connected to The output/input port (b) of the adjustable device unit, the output port of the phase shifting unit is connected to the RF output port; the input port of the temperature detection unit is connected to the voltage/current source signal input port, and the output port of the temperature detection unit is connected to the adjustable device unit The input port (c), the temperature detection unit outputs the control signal to the adjustable device unit through the output port according to the working temperature, and the adjustable device unit adjusts its own parameters according to the control signal output by the temperature detection unit, changes the processing of the radio frequency signal, and passes The output/input port is fed back to the phase shifter unit, and the phase shifter unit outputs the radio frequency signal to the radio frequency output port after comprehensively processing the radio frequency input signal and the feedback signal of the adjustable device unit.
移相单元包括三个晶体管：M1晶体管、M2晶体管和M3晶体管，三个电阻：R1电阻、R2电阻和R3电阻，以及三个电感：L1电感、L2电感和L3电感；其中M1晶体管的栅极和R1电阻的A端连接，M1晶体管的源极和L1电感的A端连接同时连接射频输入端口，M1晶体管的漏极与L2电感的A端连接同时连接至输出端口，R1电阻的B端连接至控制信号Ven，L1电感的B端与L2电感的B端相连，同时与M2晶体管的漏极相连；M2晶体管的栅极与R2电阻的A端相连，M2晶体管的源极与M3晶体管的漏极相连，同时与L3电感的A端、可调器件单元输出/输入端口（b）相连，R2电阻的B端与控制信号Ven相连；M3晶体管的栅极与R3电阻的A端相连，M3晶体管的源极接地；R3电阻的B端与控制电压Venf相连；电感L3的B端接地。The phase shift unit includes three transistors: M1 transistor, M2 transistor and M3 transistor, three resistors: R1 resistor, R2 resistor and R3 resistor, and three inductors: L1 inductor, L2 inductor and L3 inductor; the gate of the M1 transistor It is connected to the A terminal of the R1 resistor, the source of the M1 transistor is connected to the A terminal of the L1 inductor and connected to the RF input port at the same time, the drain of the M1 transistor is connected to the A terminal of the L2 inductor and connected to the output port at the same time, and the B terminal of the R1 resistor is connected to To the control signal Ven, the B terminal of the L1 inductor is connected to the B terminal of the L2 inductor, and at the same time connected to the drain of the M2 transistor; the gate of the M2 transistor is connected to the A terminal of the R2 resistor, and the source of the M2 transistor is connected to the drain of the M3 transistor connected to the A terminal of the L3 inductor and the output/input port (b) of the adjustable device unit, and the B terminal of the R2 resistor is connected to the control signal Ven; the gate of the M3 transistor is connected to the A terminal of the R3 resistor, and the M3 transistor The source of the resistor is grounded; the B terminal of the resistor R3 is connected to the control voltage Venf; the B terminal of the inductor L3 is grounded.
移相单元中的M1晶体管、M2晶体管和M3晶体管为NMOS管。The M1 transistor, the M2 transistor and the M3 transistor in the phase shifting unit are NMOS transistors.
可调器件单元包括一个VC1压控电容和C1隔直电容；VC1压控电容的A端与C1隔直电容的A端相连，同时连到可调器件单元的输入端口（c），VC1压控电容的B端接地；C1隔直电容的B端与可调器件单元的输出/输入端口（b）相连。The adjustable device unit includes a VC1 voltage-controlled capacitor and a C1 DC-blocking capacitor; the A terminal of the VC1 voltage-controlled capacitor is connected to the A-terminal of the C1 DC-blocking capacitor, and is connected to the input port (c) of the adjustable device unit, and the VC1 voltage-controlled Terminal B of the capacitor is grounded; terminal B of the C1 DC blocking capacitor is connected to the output/input port (b) of the adjustable device unit.
所述的温度检测单元包括三个晶体管：M4晶体管、P1晶体管和P2晶体管，R4电阻和D1二极管；P1晶体管源极与VDD电源端相连，P1晶体管的栅极与P2晶体管的栅极以及P1晶体管的漏极相连，P1晶体管的漏极还与M4晶体管的漏极相连；P2晶体管的源极与VDD电源端相连，P2晶体管的漏极与R4电阻的A端相连，同时与可调器件单元的输入端口（c）相连；R4电阻的B端与地相连；M4晶体管的栅极与D1二极管的正极相连，M4晶体管的源极与地相连；D1二极管的负极接地。The temperature detection unit includes three transistors: M4 transistor, P1 transistor and P2 transistor, R4 resistor and D1 diode; the source of the P1 transistor is connected to the VDD power supply terminal, the gate of the P1 transistor is connected to the gate of the P2 transistor and the P1 transistor The drain of the P1 transistor is also connected to the drain of the M4 transistor; the source of the P2 transistor is connected to the VDD power supply terminal, the drain of the P2 transistor is connected to the A terminal of the R4 resistor, and is connected to the adjustable device unit The input port (c) is connected; the B terminal of the R4 resistor is connected to the ground; the gate of the M4 transistor is connected to the anode of the D1 diode, and the source of the M4 transistor is connected to the ground; the cathode of the D1 diode is connected to the ground.
所述的温度检测单元中M4晶体管为NMOS管，P1晶体管和P2晶体管为PMOS管。In the temperature detection unit, the M4 transistor is an NMOS transistor, and the P1 transistor and the P2 transistor are PMOS transistors.
其工作方法为：所述的Ven控制信号端口和Venf控制信号端口输出的信号是一对反相控制信号，M1晶体管、M2晶体管、M3晶体管工作在开关模式，M4晶体管为电流源，P1晶体管、P2晶体管工作在电流镜模式，当Ven控制信号端口为低电平时，M1晶体管、M2晶体管关闭，M3晶体管导通，电路工作参考状态；当Ven控制信号端口为高电平时，M1晶体管、M2晶体管打开，M3晶体管关闭（等效成关态电容Coff3），此时Coff3、L3电感和VC1压控电容组成并联谐振电路，VC1压控电容将谐振电路的温度特性调整为所需值，来补偿整个移相器的温度变化，使移相器从-55至125℃甚至更宽温度范围内的移相特性恒定。Its working method is: the signals output by the Ven control signal port and the Venf control signal port are a pair of inverting control signals, M1 transistor, M2 transistor, M3 transistor work in switch mode, M4 transistor is a current source, P1 transistor, The P2 transistor works in the current mirror mode. When the Ven control signal port is low level, the M1 transistor and M2 transistor are turned off, the M3 transistor is turned on, and the circuit works in the reference state; when the Ven control signal port is high level, the M1 transistor and M2 transistor Turn on, M3 transistor is off (equivalent to off-state capacitor Coff3), at this time Coff3, L3 inductor and VC1 voltage-controlled capacitor form a parallel resonant circuit, VC1 voltage-controlled capacitor adjusts the temperature characteristic of the resonant circuit to the required value to compensate the entire The temperature change of the phase shifter makes the phase shifting characteristics of the phase shifter constant from -55 to 125°C or even wider temperature range.
下面结合附图对本发明技术方案进一步说明Below in conjunction with accompanying drawing, technical scheme of the present invention is further described
如图2所示，一种温度补偿型移相器，其结构包括温度检测单元，移相单元和可调器件单元，其中移相器单元的输入端连接至射频输入端口，移相单元端口a连接至可调器件单元的端口b，移相单元的输出端连接射频输出端口；温度检测单元输入端口连接电压/电流源信号输入端口，温度检测单元的输出端口连接至可调器件单元的输入端口c，温度检测单元根据工作温度通过输出端口输出控制信号至可调器件单元；可调器件单元的一个端口c连接至温度检测单元的输出端，另一个端口b连接至移相器单元端口a，可调器件单元根据温度检测单元输出的控制信号，调整自身参数，改变对射频信号的处理，并通过端口b反馈至移相器单元，移相单元综合处理射频输入信号和可调器件单元反馈信号后，输出射频信号至射频输出端口。As shown in Figure 2, a temperature compensation type phase shifter, its structure includes a temperature detection unit, a phase shift unit and an adjustable device unit, wherein the input end of the phase shifter unit is connected to the radio frequency input port, and the phase shift unit port a Connect to port b of the adjustable device unit, the output end of the phase shift unit is connected to the radio frequency output port; the input port of the temperature detection unit is connected to the voltage/current source signal input port, and the output port of the temperature detection unit is connected to the input port of the adjustable device unit c, the temperature detection unit outputs a control signal to the adjustable device unit through the output port according to the working temperature; one port c of the adjustable device unit is connected to the output end of the temperature detection unit, and the other port b is connected to the port a of the phase shifter unit, The adjustable device unit adjusts its own parameters according to the control signal output by the temperature detection unit, changes the processing of the radio frequency signal, and feeds back to the phase shifter unit through port b, and the phase shifter unit comprehensively processes the radio frequency input signal and the feedback signal of the adjustable device unit After that, output the RF signal to the RF output port.
如图3所示，所述的移相单元包括三个晶体管M1、M2和M3，三个电阻R1、R2和R3以及三个电感L1、L2和L3。其中晶体管第一个晶体管M1的栅极和电阻R1的一端连接，M1的源极和电感L1的一端连接同时连到射频输入端口，M1的漏极与电感L2的一端连接同时连接至输出端口，电阻R1的另一端连接至控制信号Ven，电感L1的另一端与电感L2的另一端相连，同时与第二个晶体管M2的漏极相连。第二个晶体管M2的栅极与电阻R2的一端相连，M2的源极与第三个晶体管M3的漏极相连，同时与电感L3的一端、可调器件单元端口b相连，电阻R2的另一端连接至控制信号Ven；第三个晶体管M3的栅极与电阻R3的一端相连，M3的源极接地；电阻R3的栅极与控制电压Venf相连；电感L3的另一端接地。As shown in FIG. 3 , the phase shift unit includes three transistors M1 , M2 and M3 , three resistors R1 , R2 and R3 and three inductors L1 , L2 and L3 . Among them, the gate of the first transistor M1 is connected to one end of the resistor R1, the source of M1 is connected to one end of the inductor L1 and connected to the RF input port at the same time, the drain of M1 is connected to one end of the inductor L2 and connected to the output port at the same time, The other end of the resistor R1 is connected to the control signal Ven, and the other end of the inductor L1 is connected to the other end of the inductor L2 and also connected to the drain of the second transistor M2. The gate of the second transistor M2 is connected to one end of the resistor R2, the source of M2 is connected to the drain of the third transistor M3, and at the same time connected to one end of the inductor L3 and the port b of the adjustable device unit, and the other end of the resistor R2 connected to the control signal Ven; the gate of the third transistor M3 is connected to one end of the resistor R3, and the source of M3 is grounded; the gate of the resistor R3 is connected to the control voltage Venf; the other end of the inductor L3 is grounded.
所述的可调器件单元包括一个压控电容VC1和隔直电容C1；压控电容VC1的一端与隔直电容C1一端相连，同时连到端口c，另一端接地；隔直电容C1的另一端与端口b相连。The adjustable device unit includes a voltage-controlled capacitor VC1 and a DC-blocking capacitor C1; one end of the voltage-controlled capacitor VC1 is connected to one end of the DC-blocking capacitor C1, and is connected to port c at the same time, and the other end is grounded; the other end of the DC-blocking capacitor C1 Connected to port b.
所述的温度检测单元包括一个NMOS管M4、两个PMOS管P1和P2，电阻R4和二极管D1。第一个PMOS管P1源极与电源端VDD向连，P1的栅极与第二个PMOS管P2的栅极以及P1的漏极相连，P1的漏极还与M4的漏极相连；第二个PMOS管P2的源极与电源端VDD相连，P2的漏极与电阻R4的一端相连，同时与可调器件单元的端口c相连；电阻R4的另一端与地相连；第四个NMOS管M4的栅极与二极管D1的正极相连，M4的源极与地相连；二极管D1的负极接地。The temperature detection unit includes an NMOS transistor M4, two PMOS transistors P1 and P2, a resistor R4 and a diode D1. The source of the first PMOS transistor P1 is connected to the power supply terminal VDD, the gate of P1 is connected to the gate of the second PMOS transistor P2 and the drain of P1, and the drain of P1 is also connected to the drain of M4; The source of the first PMOS transistor P2 is connected to the power supply terminal VDD, the drain of P2 is connected to one end of the resistor R4, and is connected to the port c of the adjustable device unit; the other end of the resistor R4 is connected to the ground; the fourth NMOS transistor M4 The gate of M4 is connected to the anode of diode D1, the source of M4 is connected to ground; the cathode of diode D1 is grounded.
所述的Ven控制信号端口和Venf控制信号端口输出的信号是一对反相控制信号。晶体管M1、M2、M3工作在开关模式，M4为电流源，P1、P2工作在电流镜模式。当Ven为低电平时，第一个NMOS管（M1）、第二个NMOS管（M2）关闭（等效为关态电容Coff1、Coff2），第三个NMOS管（M3）导通，电路工作参考状态；当Ven为高电平时，第一个NMOS管（M1）、第二个NMOS管（M2）打开，第三个NMOS管（M3）关闭（等效为关态电容Coff3），此时Coff3、L3和VC1（C1为隔直电容，工作时忽略）组成了并联谐振电路。温度检测单元采用电流源输入，此电流源可以采用正温度系数、负温度系数或者零温度系数的电流，根据实际需要来进行确定。本例中采用正温度系数的电流，同时采用电压具有正温度系数的二极管作为负载来产生正温度系数的电压，这个电压作用于M4以产生正温度系数的电流，电流镜P1和P2将此电流放大N（N可调，根据实际情况）倍，然后流过负载电阻R4，产生压控电容VC1的控制电压，VC1根据控制电压调整电容值，补偿移相器的温度特性，使得移相器在很大的温度跨度范围内均能实现恒定的移相性能。The signals output by the Ven control signal port and the Venf control signal port are a pair of anti-phase control signals. Transistors M1, M2, M3 work in switch mode, M4 is a current source, and P1, P2 work in current mirror mode. When Ven is low, the first NMOS transistor (M1) and the second NMOS transistor (M2) are turned off (equivalent to off-state capacitors Coff1 and Coff2), the third NMOS transistor (M3) is turned on, and the circuit works Reference state; when Ven is at a high level, the first NMOS transistor (M1), the second NMOS transistor (M2) are turned on, and the third NMOS transistor (M3) is turned off (equivalent to the off-state capacitor Coff3), at this time Coff3, L3 and VC1 (C1 is a DC blocking capacitor, ignored during work) form a parallel resonant circuit. The temperature detection unit adopts a current source input, and the current source can adopt a current with a positive temperature coefficient, a negative temperature coefficient or a zero temperature coefficient, which is determined according to actual needs. In this example, a current with a positive temperature coefficient is used, and a diode with a voltage with a positive temperature coefficient is used as a load to generate a voltage with a positive temperature coefficient. This voltage is applied to M4 to generate a current with a positive temperature coefficient. The current mirrors P1 and P2 convert this current Amplify N (N is adjustable, according to the actual situation) times, and then flow through the load resistor R4 to generate the control voltage of the voltage-controlled capacitor VC1, VC1 adjusts the capacitance value according to the control voltage, and compensates the temperature characteristics of the phase shifter, so that the phase shifter in Constant phase shift performance is achieved over a wide temperature span.
如图4所示，给出了采用传统的和本发明的移相器电路在-55℃至125℃范围内的移相性能比较，从图中看出，两个移相器实现的均是45°移相功能，在-55℃至125℃范围内，传统的移相器移相度数改变了1.5°，而7位移相器的步长仅为2.8°，1.5°的变化很容易造成不同移相状态之间的交错，影响相控阵天线的性能，采用本发明的移相器在-55℃至125℃温度范围内仅变化了0.03°，解决了传统移相器性能随温度变化的问题，进而改善相控阵天线的温度性能。因此本发明具有广阔的市场前景和应用价值。As shown in Figure 4, the phase shift performance comparison between the traditional and the phase shifter circuits of the present invention in the range of -55°C to 125°C is provided. As can be seen from the figure, both phase shifters realize 45° phase shift function, in the range of -55°C to 125°C, the phase shift degree of the traditional phase shifter changes by 1.5°, while the step size of the 7 phase shifter is only 2.8°, and the change of 1.5° can easily cause a difference The interleaving between the phase shifting states affects the performance of the phased array antenna. The phase shifter of the present invention only changes by 0.03° in the temperature range from -55°C to 125°C, which solves the problem that the performance of the traditional phase shifter changes with temperature. problem, thereby improving the temperature performance of the phased array antenna. Therefore, the present invention has broad market prospect and application value.
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| CN114265038A (en) * | 2021-11-22 | 2022-04-01 | 电子科技大学 | A high-precision switching phase-shifting unit with temperature compensation effect |
| CN115529091A (en) * | 2022-09-30 | 2022-12-27 | 中国电子科技集团公司第二十六研究所 | Temperature compensation phase shifter, radio frequency module and phase temperature compensation method of radio frequency module |
| WO2023010732A1 (en) * | 2021-08-04 | 2023-02-09 | 国仪量子(合肥)技术有限公司 | Temperature compensation broadband signal attenuation circuit and control method thereof |
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| CN119232129A (en) * | 2024-12-04 | 2024-12-31 | 四川泊微科技有限公司 | Switch for radio frequency SoC chip, SoC chip and temperature compensation control method |
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Address after: 210016 No.166, zhengfangzhong Road, moling street, Jiangning District, Nanjing City, Jiangsu Province Applicant after: Nanjing Guobo Electronics Co.,Ltd. Address before: 210016 No.166, zhengfangzhong Road, moling street, Jiangning District, Nanjing City, Jiangsu Province Applicant before: NANJING GUOBO ELECTRONICS Co.,Ltd. |
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Application publication date: 20181012 |
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