CN108646348B - A kind of deep ultraviolet multi-quantum well waveguide production method - Google Patents
A kind of deep ultraviolet multi-quantum well waveguide production method Download PDFInfo
- Publication number
- CN108646348B CN108646348B CN201810465380.4A CN201810465380A CN108646348B CN 108646348 B CN108646348 B CN 108646348B CN 201810465380 A CN201810465380 A CN 201810465380A CN 108646348 B CN108646348 B CN 108646348B
- Authority
- CN
- China
- Prior art keywords
- layer
- low
- index layer
- refractive index
- high refractive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 299
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000011241 protective layer Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000002994 raw material Substances 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000002360 preparation method Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000012792 core layer Substances 0.000 claims description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 3
- -1 calcirm-fluoride Chemical compound 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 43
- 239000000835 fiber Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 239000000377 silicon dioxide Substances 0.000 description 15
- 239000013307 optical fiber Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 5
- 230000000644 propagated effect Effects 0.000 description 5
- 239000011162 core material Substances 0.000 description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention belongs to optical signal prosessing device technical fields, it is related to a kind of deep ultraviolet multi-quantum well waveguide production method, technical process includes preparing substrate layer, prepare sandwich layer, it prepares clad and prepares protective layer totally four steps, two or more combined material is used on substrate layer, grow the alternate low-index layer of high/low refractive index and high refractive index layer, low-index layer and high refractive index layer are etched into rectangular restricted area as sandwich layer again, in the surrounding growth clad of sandwich layer, finally following table sheath and up-protective layer are grown respectively in the bottom surface of substrate layer and the top surface of clad, obtain the ultraviolet multi-quantum well waveguide of rectangular configuration, the effective refractive index for freely changing sandwich layer by the number of plies and thickness of design low-index layer and high refractive index layer is poor, flexible mentality of designing is provided for deep ultraviolet Quantum Well waveguide, simple knot Structure and production method；It is smaller to deep ultraviolet absorption in deep ultraviolet band, it can be as the raw material of various fiber waveguide devices.
Description
Technical field:
The invention belongs to optical signal prosessing device technical fields, are related to a kind of deep ultraviolet multi-quantum well waveguide production method,
Using two or more combined material, by growing high/low refractive index alternating layer, application and preparation is in deep ultraviolet band
Multi-quantum well waveguide, play a significant role in fields such as bio-sensing, health care and hydrospace detections.
Background technique:
Multiple quantum wells (multiple quantum well) refers to the system that multiple Quantum Well are combined, Multiple-quantum
Trap can also be made of the unmatched two kinds of materials of lattice.If lattice mismatch in certain limit (less than 7%), and strain
The thickness of material is no more than critical thickness, so that it may by the difference between elastic deformation compensation lattice constant, and not produce at interface
Raw dislocation and defect, this multiple quantum wells are known as strained quantum well.Since the elastic deformation in lattice influences band structure, in this way
It is again more that a kind of means of " cutting out " energy band --- InGaAsP/InP long wavelength is made using the characteristics of strained quantum well in strain
(1.3 microns) Strained Quantum Well Lasers, threshold current substantially reduce, and characteristic temperature correspondinglys increase.Semiconductor cascade is infrared to swash
Light device and cascade thz laser, are all the areas P+N-N+ Jie Zhong N- that multiple quantum wells is placed in reverse bias, more using electronics
Trap sequential tunneling realizes laser, and optical maser wavelength depends on the energy difference between subband.Optical waveguide (optical waveguide)
Be guidance light wave in the medium apparatus wherein propagated, also known as dielectric optical waveguide, optical waveguide has two major classes: one kind is integrated light wave
It leads, including plane (film) dielectric optical waveguide and slab dielectric optical waveguide, is usually all in integrated optoelectronic device (or system)
A part, so being called integrated light guide；Another kind of is cylindrical light waveguide, commonly referred to as optical fiber (optical fiber).Optical waveguide
The leading structure for the transmission optical frequency electromagnetic wave being made of light transparent medium (such as quartz glass), the transmission principle of optical waveguide are different from
Metal enclosed waveguide, on the dielectric interface of different refractivity, the total reflection phenomenon of electromagnetic wave makes light wave be confined to waveguide week
It encloses in finite region and propagates；Multimode and single mode optical fiber have been applied successfully to communicate, and the transmission characteristic of optical fiber is to extraneous temperature
It is sensitive with the factors such as pressure, thus can be made into fibre optical sensor, for measuring the physical quantitys such as temperature, pressure, sound field.Planar medium
Optical waveguide is simplest optical waveguide, is that the silicon (or GaAs or glass) for being n2 with refractive index makees substrate, uses microelectronic technique
The deielectric-coating that one layer of refractive index is n1 is plated on it usually takes n1 > n2 > n3 along with refractive index is made of the coating of n3,
So that light wave is confined to propagate in deielectric-coating.Slab dielectric optical waveguide is that a refraction is generated in the matrix that refractive index is n2
Rate is the strip of n1, takes n1 > n2, so that light wave to be confined to propagate in strip, this optical waveguide is commonly used for the splitter of light, coupling
The function elements such as clutch, switch.When the lateral dimension of optical waveguide is more much larger than the wavelength of light, diffraction caused by the fluctuation of light
Phenomenon, which can generally omit, to be disregarded, and light can be handled with laws of geometrical optics in propagation problem wherein, such as integrated light guide and rank
It jumps in index fiber, is all to be greater than critical angle using incidence angle to be totally reflected light on boundary, as a result light is just along broken line
Path is propagated wherein, in gradient index fibre, then makes light gradually toward the curved rule in the big direction of refractive index using light
It is propagated wherein along curved path.When the lateral dimension of optical waveguide and the wavelength of light are not much different, caused by the fluctuation of light
Diffraction phenomena just cannot omit, and the electromagnetic theory that need to be used up handles light in propagation problem wherein, i.e., by Maxwell equation
Group is set out, and boundary condition is listed, and solves distribution and propagation characteristic of the electric and magnetic fields of light wave in optical waveguide, to solve to have
Pass problem, calculation shows that, for the optical waveguide of a kind of given shape and refractive index, can in the light wave wherein propagated, electric field and
Various different forms are distributed in magnetic field, each form is called a kind of transmission mould, referred to as mould；Every kind of mould all has one
Cutoff frequency, if the frequency of light wave is lower than this cutoff frequency, the light of this mould cannot be propagated in the optical waveguide.Optical fiber
Diameter it is bigger can transmission modulus it is more, the optical fiber that can transmit a variety of moulds is called multimode fibre；A kind of mould can only be transmitted
Optical fiber is called single mode optical fiber；Multimode fibre is usually used in short range transmission, such as endoscope；Single mode optical fiber is then used for logical at a distance
Letter.
A kind of multiple-quantum well waveguide butt-coupling method disclosed in Chinese patent 02124387.5 includes the following steps: (1)
It is epitaxially grown on the substrate the multi-quantum pit structure of component A；(2) after depositing a layer dielectric, mask lithography erodes A platform
Multi-quantum pit structure other than item, the deielectric-coating are silica or silica；(3) multiple quantum wells of extension component B again
Structure；(4) mask lithography removes the bad part of the interface A and B growth quality；(5) last large area epitaxial optimization designs
Body material, while the upper waveguide as component A and B and the coupled waveguide between them；Chinese patent
A kind of cladding Effects of GaAs/AlGaAs Quantum Wells waveguide laser of unsymmetrical metal grating disclosed in 201410104279.8 include on to
Under the upper metal grating layer, active layer, lower metal carbonyl coat and the substrate that are sequentially stacked, wherein the upper metal grating layer and lower gold
Belong to clad to consist of metal, production has one-dimensional barcode metal grating in the upper metal grating layer；The active layer be by
Mqw material is constituted；The upper metal grating layer is different with the surface texture of lower metal carbonyl coat, metal grating layer on this
It can be by light field local in the active layer with lower metal carbonyl coat；A kind of plane disclosed in Chinese patent 201510073921.5
Optical waveguide includes: under-clad layer, waveguide core layer, separation layer and top covering, and the refractive index of the top covering and the under-clad layer is equal
And it is higher than the refractive index of the separation layer, the separation layer is formed on the under-clad layer, and the waveguide core layer is coated completely
In the separation layer, the top covering is formed on the separation layer；The fusing point of the separation layer is lower than the waveguide core layer
Fusing point, and fill each gap of the waveguide core layer；The fusing point of the top covering is lower than the fusing point of the waveguide core layer；Institute
The material for stating waveguide core layer is the silica of doped germanium, and the material of the under-clad layer is silica；The material of the separation layer
Material is the silica doped with fluorine and germanium, wherein the doping quality of the fluorine is the 1-2% of the silica quality, it is described
The doping quality of germanium is the 3-6% of the silica quality, and the doping mass ratio of the fluorine and germanium is greater than 1:3；On described
The material of covering is the silica doped with fluorine and germanium, wherein the doping quality of the fluorine is the 1- of the silica quality
3%, the doping quality of the germanium is the 3-6% of the silica quality, and the doping mass ratio of the fluorine and germanium is 1:3；
A kind of planar optical waveguide disclosed in Chinese patent 201280067966.6 includes: a planar light substrate, has an edge table
Face and the unthreaded hole being located on the edge surface including an optical waveguide, the optical waveguide with one；And a pipe, it is formed
The planar light substrate is fixed to be defined as lumen for receiving a ferrule and one with a size
Edge surface on the edge surface a, so that section of the lumen at the edge surface of the pipe and the unthreaded hole pair
Quasi-: a kind of planar optical waveguide that end face is lens disclosed in Chinese patent 201410842767.9 includes: a planar optical waveguide battle array
Column, include multiple planar optical waveguides disposed in parallel, and the spherical mirror end face that multiple planar optical waveguide has had lens,
The spherical mirror end face has collimation or focusing function；And a coupler, it is used to support and fixes the planar optical waveguide array；In
A kind of hot non-sensitive type planar optical waveguide disclosed in state's patent 201520474486.2 includes: basal layer and sandwich layer, the sandwich layer
It is formed on the basal layer, further includes the top covering for being coated on the sandwich layer surrounding；Top covering material includes ultraviolet polymerization formula
Fluorinated polymeric material, base layer material and core material are inorganic optical materials；Chinese patent 201510754780.3 is public
A kind of composite plane optical waveguide that surface evanescent field strength is tunable opened includes: leading layer and tuning layer, and leading layer is by glass
Substrate and the periodic multilayer film being coated with thereon are constituted, the liquid crystal layer and its substrate layer structure that tuning layer is effectively arranged by one layer
At；Leading layer and tuning layer overlap up and down constitutes composite plane waveguide；A kind of heat disclosed in Chinese patent 201510385994.8
Non-sensitive type planar optical waveguide includes basal layer and sandwich layer, and sandwich layer is formed on basal layer, further includes being coated on the sandwich layer four
The top covering in week, top covering material includes ultraviolet polymerization formula fluorinated polymeric material, and base layer material and core material are nothings
Machine optical material；A kind of multiple-quantum well waveguide butt-coupling method disclosed in Chinese patent 201110458024.8 includes: A, in N
Type substrate last time the first multi-quantum pit structure of extension, first multi-quantum pit structure include the first lower waveguide layer, more than first
Ducting layer on quantum well layer and first；B, after deielectric-coating to be deposited, mask lithography is carried out, removing using three step etching methods needs to carry out
The waveguide portion of the first area of secondary epitaxy；The deielectric-coating is silica or silicon nitride；The three step etchings method are as follows:
Successively use RIE dry etching, non-selective wet corrosion and selective wet etching to needing to carry out the of secondary epitaxy
The waveguide portion in one region is etched；C, epitaxial wafer is placed in metal organic chemical vapor deposition equipment and is carried out at high warm
Reason；The temperature of the high-temperature heat treatment is 680 degrees Celsius, and the time is 15 minutes；D, two Multiple-quantum of secondary epitaxy growth regulation is carried out
Well structure, second multi-quantum pit structure, generation have the second lower waveguide layer, ducting layer on the second multiple quantum well layer and second；
Optical waveguide is a kind of extremely important structure in optical signal transmission field, and most of optical devices require to transmit by optical waveguide
The optical devices such as optical signal, such as AWG, photoswitch.Single-chip integration photon device integrates the device monolithic of at least two functions
Together, it can be avoided the coupling loss between each function element, to simplify the coupling package of device.Deep ultraviolet band is being killed
Bacterium, perspective identification, marine microorganism research, medical treatment etc. have a wide range of applications potentiality, so, the light wave of deep ultraviolet band
It leads and is of great significance in terms of scientific research.Since UV energy is higher, many optical waveguide materials all absorb ultraviolet light, energy
The material for being enough in transmission ultraviolet light is seldom, shorter based on ultraviolet band wavelength, and the size of ultraviolet single mode waveguide requires small, core packet
Refringence is small, and process allowance is small, causes to make in technique difficult.Therefore, a kind of deep ultraviolet multi-quantum well waveguide of R & D design
Production method overcomes Conventional UV single mode waveguide size small, and core packet refringence is small, and light field locality is not strong and process allowance is small
The defects of, there are good society and economic value, has a extensive future.
Summary of the invention:
It is an object of the invention to overcome disadvantage of the existing technology, a kind of deep ultraviolet multi-quantum well waveguide of R & D design
Production method prepares the multi-quantum well waveguide for having that size is small, transmission loss is low and is easy to make and integrate.
To achieve the goals above, the technical process of deep ultraviolet multi-quantum well waveguide production method of the present invention includes
Substrate layer is prepared, sandwich layer is prepared, prepare clad and prepares protective layer totally four steps:
(1) it prepares substrate layer: choosing the raw material of substrate layer, raw material substrate is cut into the size of setting, complete lining
The preparation of bottom；
(2) sandwich layer is prepared: using plasma reinforced chemical vapour deposition method, Low Pressure Chemical Vapor Deposition, chemical gaseous phase
Sedimentation or flame method are in the upper surface of substrate layer according to one layer of low-index layer, and the sequence of one layer of high refractive index layer is from the bottom to top
Alternating growth low-index layer and high refractive index layer are finally bound by one layer of low-index layer, and the number of plies of low-index layer is 6,
The high refractive index layer number of plies is 5, and low-index layer and high refractive index layer are etched rectangular restricted area structure using etching technics
Sandwich layer completes the preparation of sandwich layer；
(3) clad is prepared: using plasma reinforced chemical vapour deposition method, Low Pressure Chemical Vapor Deposition, chemical gas
Phase sedimentation or flame method are in the front of sandwich layer, rear portion, left part, right part and upper grown clad；
(4) prepare protective layer: using vapor deposition or silane thermal decomposition process the bottom surface of substrate layer 1 grow one layer of polysilicon film or
Pure silicon film as lower protective layer, clad one layer of polysilicon film of grown on top or pure silicon film as up-protective layer, use heat
Polysilicon not or silicon fiml is oxidized to silica, or is not directly grown layer of metal film in the bottom surface of substrate layer 1 by oxidation technology
As lower protective layer, clad grown on top layer of metal film as up-protective layer, complete the preparation of protective layer, obtain depth
Ultraviolet multi-quantum well waveguide.
Deep ultraviolet multi-quantum well waveguide prepared by the present invention is rectangular waveguide, and the size of rectangular waveguide is according to substrate layer, low
The raw material of index layer, high refractive index layer and clad chooses and thickness and the number of plies choosing of low-index layer and high refractive index layer
Take determination.
The main structure of deep ultraviolet multi-quantum well waveguide prepared by the present invention includes lower protective layer, substrate layer, sandwich layer, cladding
Layer and up-protective layer；The upper surface of the lower protective layer of rectangular plate-like structure is provided with the substrate layer of rectangular block shape structure, substrate layer
The sandwich layer for being provided centrally with rectangular block shape structure, front, rear portion, left part, right part and the top of sandwich layer wrapped clad, wraps
The upper surface of coating is provided with the up-protective layer of rectangular plate-like structure；The main structure of sandwich layer includes low-index layer and high refraction
Rate layer, low-index layer and high refractive index layer are handed over from the bottom to top according to one layer of low-index layer, the sequence of one layer of high refractive index layer
It for setting, is finally bound by one layer of low-index layer, the number of plies of low-index layer is n, and the high refractive index layer number of plies is n-1；Lower guarantor
Sheath and up-protective layer are polysilicon film or pure silicon film；Substrate layer, low-index layer, high refractive index layer and clad raw material packet
It includes in the lesser silica of the deep ultraviolet band absorption coefficient of light, magnesium fluoride, calcirm-fluoride, magnesia, lanthanum fluoride, aluminium oxide and oxygen
Change hafnium；The effect of lower protective layer and up-protective layer is to prevent substrate layer, sandwich layer and clad dampness and be damaged；Low-index layer and
The combined material that high refractive index layer chooses two or more is etched into low-index layer and high refractive index layer alternating after growing
Rectangle limitation plot structure sandwich layer, the refractive index of low-index layer is lower than the refractive index of high refractive index layer, the low refraction of top layer
The thickness of rate layer is identical as the thickness of lowest level low-index layer, the thickness and lowest level low-refraction of top layer's low-index layer
The thickness of layer is not identical as the thickness of middle layer low-index layer；The equivalent refractive index of sandwich layer is according to low-index layer and high refraction
The selection of rate thickness degree and the number of plies determines, the refringence of deep ultraviolet multi-quantum well waveguide is controlled according to the equivalent refractive index of sandwich layer
With the size of bending radius and the device prepared based on deep ultraviolet multi-quantum well waveguide, the device of preparation is made to be easier to integrate,
Y beam splitter based on the production of deep ultraviolet multi-quantum well waveguide can stablize transmission ultraviolet light wave at 225nm wavelength, and at Y points
Energy is divided into two at branch.
Compared with prior art, the present invention two or more combined material is used on substrate layer, growth height/
The alternate low-index layer of low-refraction and high refractive index layer, then low-index layer and high refractive index layer are etched into rectangular limitation
Area is as sandwich layer, in the surrounding growth clad of sandwich layer, finally in the case where the bottom surface of substrate layer and the top surface of clad are grown respectively
Table sheath and up-protective layer obtain the ultraviolet multi-quantum well waveguide of rectangular configuration, pass through design low-index layer and high refractive index
The effective refractive index that the number of plies and thickness of layer freely change sandwich layer is poor, provides flexible design for deep ultraviolet Quantum Well waveguide and thinks
Road, simple structure and production method；Its size is small, and transmission loss is low, is easily integrated, and inhales in deep ultraviolet band to deep ultraviolet
Receipts are smaller, can be as the raw material of various fiber waveguide devices.
Detailed description of the invention:
Fig. 1 is process flow diagram of the invention.
Fig. 2 is the agent structure schematic diagram of deep ultraviolet multi-quantum well waveguide prepared by the present invention.
Fig. 3 be the present embodiments relate to Y beam splitter test result schematic diagram.
Fig. 4 be the present embodiments relate to deep ultraviolet multi-quantum well waveguide production method process schematic.
Fig. 5 is the mode distributions figure of the deep ultraviolet multi-quantum well waveguide of preparation of the embodiment of the present invention.
Specific embodiment:
The present invention is described further by way of example and in conjunction with the accompanying drawings.
Embodiment 1:
The technique mistake of the deep ultraviolet multi-quantum well waveguide production method for the deep ultraviolet multi-quantum well waveguide that the present embodiment is related to
Journey includes preparing substrate layer, preparing sandwich layer, prepare clad and prepare protective layer totally four steps:
(1) it prepares substrate layer: choosing the raw material of substrate layer 2, raw material substrate is cut into the size of setting, complete
The preparation of substrate layer 2；
(2) sandwich layer is prepared: using plasma reinforced chemical vapour deposition method (Plasma Enhanced Chemical
Vapor Deposition), Low Pressure Chemical Vapor Deposition (Low Pressure Chemical Vapor Deposition),
Chemical vapour deposition technique (Chemical Vapor Deposition) or flame method (Flame Hydrolysis Method) In
The upper surface of substrate layer 2 is according to one layer of low-index layer 10, and alternating growth is low from the bottom to top for the sequence of one layer of high refractive index layer 20
Index layer 10 and high refractive index layer 20 are finally bound by one layer of low-index layer 10, and the number of plies of low-index layer 10 is 6, high
20 number of plies of index layer is 5, and low-index layer 10 and high refractive index layer 20 are etched rectangular restricted area using etching technics and tied
The sandwich layer 3 of structure completes the preparation of sandwich layer 3；
(3) clad is prepared: using plasma reinforced chemical vapour deposition method (Plasma Enhanced Chemical
Vapor Deposition), Low Pressure Chemical Vapor Deposition (Low Pressure Chemical Vapor Deposition),
Chemical vapour deposition technique (Chemical Vapor Deposition) or flame method (Flame Hydrolysis Method) In
Front, rear portion, left part, right part and the upper grown clad 4 of sandwich layer 3；
(4) prepare protective layer: using vapor deposition or silane thermal decomposition process the bottom surface of substrate layer 1 grow one layer of polysilicon film or
Pure silicon film as lower protective layer 1, clad 4 one layer of polysilicon film of grown on top or pure silicon film as up-protective layer 5, use
Polysilicon not or silicon fiml is oxidized to silica, or is not directly grown one layer of metal in the bottom surface of substrate layer 1 by thermal oxidation technology
Film as lower protective layer 1, clad 4 grown on top layer of metal film as up-protective layer 5, complete the preparation of protective layer,
Obtain deep ultraviolet multi-quantum well waveguide.
Deep ultraviolet multi-quantum well waveguide manufactured in the present embodiment is rectangular waveguide, the size of rectangular waveguide according to substrate layer 2,
The raw material of low-index layer 10, high refractive index layer 20 and clad 4 chooses and low-index layer 10 and high refractive index layer 20
Thickness and the number of plies, which are chosen, to be determined.
Deep ultraviolet multi-quantum well waveguide main structure manufactured in the present embodiment include lower protective layer 1, substrate layer 2, sandwich layer 3,
Clad 4 and up-protective layer 5；The upper surface of the lower protective layer 1 of rectangular plate-like structure is provided with the substrate layer of rectangular block shape structure
2, the sandwich layer 3 for being provided centrally with rectangular block shape structure of substrate layer 2, front, rear portion, left part, right part and the top of sandwich layer 3 wrap
There is clad 4, the upper surface of clad 4 is provided with the up-protective layer 5 of rectangular plate-like structure；The main structure of sandwich layer 3 includes low
Index layer 10 and high refractive index layer 20, low-index layer 10 and high refractive index layer 20 are according to one layer of low-index layer 10, and one layer
The sequence of high refractive index layer 20 is arranged alternately from the bottom to top, is finally bound by one layer of low-index layer 10, low-index layer 10
The number of plies is n (n is the integer greater than 3), and 20 number of plies of high refractive index layer is n-1 (n is the integer greater than 3)；Lower protective layer 1 and upper guarantor
Sheath 5 is polysilicon film or pure silicon film；Substrate layer 2, low-index layer 10, high refractive index layer 20 and clad 4 raw material include
In the lesser silica of the deep ultraviolet band absorption coefficient of light, magnesium fluoride, calcirm-fluoride, magnesia, lanthanum fluoride, aluminium oxide and oxidation
Hafnium；The effect of lower protective layer 1 and up-protective layer 5 is to prevent substrate layer 2, sandwich layer 3 and the dampness of clad 4 and be damaged；Low-refraction
The combined material that layer 10 and high refractive index layer 20 choose two or more is etched into low-index layer 10 and high folding after growing
The sandwich layer 3 of the alternate rectangle of rate layer 20 limitation plot structure is penetrated, the refractive index of low-index layer 10 is lower than the folding of high refractive index layer 20
Rate is penetrated, the thickness of top layer's low-index layer 10 is identical as the thickness of lowest level low-index layer 10, top layer's low-index layer
The thickness of 10 thickness and lowest level low-index layer 10 is not identical as the thickness of middle layer low-index layer 10；Sandwich layer 3 etc.
It imitates refractive index to be determined according to the selection of low-index layer 10 and 20 thickness of high refractive index layer and the number of plies, according to the equivalent folding of sandwich layer 3
Penetrate rate control deep ultraviolet multi-quantum well waveguide refringence and bending radius and based on deep ultraviolet multi-quantum well waveguide prepare
Device size, make the device of preparation be easier to integrate, the Y based on the production of deep ultraviolet multi-quantum well waveguide as shown in Figure 3
Beam splitter can stablize transmission ultraviolet light wave at 225nm wavelength, and energy is divided into two at Y-branch.
Claims (3)
1. a kind of deep ultraviolet multi-quantum well waveguide production method, it is characterised in that technical process includes preparing substrate layer, preparing core
Layer prepares clad and prepares protective layer totally four steps:
(1) it prepares substrate layer: choosing the raw material of substrate layer, raw material substrate is cut into the size of setting, complete substrate layer
Preparation；
(2) sandwich layer is prepared: using chemical vapour deposition technique or flame method in the upper surface of substrate layer according to one layer of low-refraction
Layer, the sequence of one layer of high refractive index layer alternating growth low-index layer and high refractive index layer from the bottom to top, finally by one layer of low folding
The rate layer of penetrating binds, and the number of plies of low-index layer is 6, and the high refractive index layer number of plies is 5, using etching technics by low-index layer and height
Index layer etches the sandwich layer of rectangular restricted area structure, completes the preparation of sandwich layer；
(3) prepare clad: using chemical vapour deposition technique or flame method the front of sandwich layer, rear portion, left part, right part and on
Portion grows clad；
(4) it prepares protective layer: being grown under one layer of pure silicon film is used as and protected in the bottom surface of substrate layer 1 using vapor deposition or silane thermal decomposition process
Sheath, clad one layer of pure silicon film of grown on top as up-protective layer, silicon fiml is oxidized to dioxy using thermal oxidation technology
SiClx, or directly in the bottom surface of substrate layer 1 growth layer of metal film as lower protective layer, at one layer of grown on top of clad
Metal film completes the preparation of protective layer as up-protective layer, obtains deep ultraviolet multi-quantum well waveguide.
2. deep ultraviolet multi-quantum well waveguide production method according to claim 1, it is characterised in that the deep ultraviolet of preparation is more
Quantum Well waveguide is rectangular waveguide, and the size of rectangular waveguide is according to substrate layer, low-index layer, high refractive index layer and clad
Raw material is chosen and thickness and the number of plies selection of low-index layer and high refractive index layer determine.
3. deep ultraviolet multi-quantum well waveguide production method according to claim 1, it is characterised in that the deep ultraviolet of preparation is more
The main structure of Quantum Well waveguide includes lower protective layer, substrate layer, sandwich layer, clad and up-protective layer；Rectangular plate-like structure
The upper surface of lower protective layer is provided with the substrate layer of rectangular block shape structure, the core for being provided centrally with rectangular block shape structure of substrate layer
Layer, front, rear portion, left part, right part and the top of sandwich layer have wrapped clad, and the upper surface of clad is provided with rectangular plate-like knot
The up-protective layer of structure；The main structure of sandwich layer includes low-index layer and high refractive index layer, low-index layer and high refractive index layer
According to one layer of low-index layer, the sequence of one layer of high refractive index layer is arranged alternately from the bottom to top, finally by one layer of low-index layer
It binds, the number of plies of low-index layer is n, and the high refractive index layer number of plies is n-1；Lower protective layer and up-protective layer are pure silicon film；Substrate
Layer, low-index layer, high refractive index layer and clad raw material be included in the lesser titanium dioxide of the deep ultraviolet band absorption coefficient of light
Silicon, magnesium fluoride, calcirm-fluoride, magnesia, lanthanum fluoride, aluminium oxide and hafnium oxide；The effect of lower protective layer and up-protective layer is to prevent
Substrate layer, sandwich layer and clad make moist and are damaged；Low-index layer and high refractive index layer choose two or more combination
The sandwich layer of low-index layer and the alternate rectangle limitation plot structure of high refractive index layer is etched into after Material growth, low-index layer
Refractive index is lower than the refractive index of high refractive index layer, the thickness phase of the thickness and lowest level low-index layer of top layer's low-index layer
Together, the thickness of the thickness of the thickness of top layer's low-index layer and lowest level low-index layer and middle layer low-index layer not phase
Together；The equivalent refractive index of sandwich layer is determined according to the selection of low-index layer and high refractive index layer thickness and the number of plies, according to sandwich layer
Equivalent refractive index control deep ultraviolet multi-quantum well waveguide refringence and bending radius and be based on deep ultraviolet multiple quantum wells wave
The size for leading the device of preparation makes the device of preparation be easier to integrate, the Y beam splitter based on the production of deep ultraviolet multi-quantum well waveguide
At 225nm wavelength, transmission ultraviolet light wave can be stablized, and energy is divided into two at Y-branch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810465380.4A CN108646348B (en) | 2018-05-16 | 2018-05-16 | A kind of deep ultraviolet multi-quantum well waveguide production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810465380.4A CN108646348B (en) | 2018-05-16 | 2018-05-16 | A kind of deep ultraviolet multi-quantum well waveguide production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108646348A CN108646348A (en) | 2018-10-12 |
| CN108646348B true CN108646348B (en) | 2019-11-22 |
Family
ID=63755736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810465380.4A Active CN108646348B (en) | 2018-05-16 | 2018-05-16 | A kind of deep ultraviolet multi-quantum well waveguide production method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108646348B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001108950A (en) * | 1999-10-08 | 2001-04-20 | Toshiba Corp | Method for production of semiconductor optical switch |
| CN1464603A (en) * | 2002-06-21 | 2003-12-31 | 中国科学院半导体研究所 | Multi-quantum well waveguide butt coupling method |
| CN1901301A (en) * | 2005-07-21 | 2007-01-24 | 中国科学院半导体研究所 | High injection efficiency high power 808 nm quantum trap semiconductor laser structure |
| CN102545047A (en) * | 2011-12-31 | 2012-07-04 | 武汉华工正源光子技术有限公司 | Multiple-quantum well waveguide butt-coupling method |
| CN102611003A (en) * | 2012-04-11 | 2012-07-25 | 中国科学院半导体研究所 | Quantum dot cascade laser |
| CN103887709A (en) * | 2014-03-20 | 2014-06-25 | 中国科学院半导体研究所 | Asymmetric metal grating and coating semiconductor multi-quantum-well waveguide laser |
| CN106058639A (en) * | 2016-06-20 | 2016-10-26 | 中国科学院半导体研究所 | Method for manufacturing semiconductor mode-locked laser based full quantum well selective area epitaxy |
| CN107248697A (en) * | 2017-07-26 | 2017-10-13 | 福建中科光芯光电科技有限公司 | A kind of preparation method of long wavelength's InP-base DFB semiconductor laser tube core |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7282777B1 (en) * | 2004-09-27 | 2007-10-16 | California Institute Of Technology | Interband cascade detectors |
| US20120300796A1 (en) * | 2011-05-27 | 2012-11-29 | Sysak Matthew N | Hybrid lasers |
-
2018
- 2018-05-16 CN CN201810465380.4A patent/CN108646348B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001108950A (en) * | 1999-10-08 | 2001-04-20 | Toshiba Corp | Method for production of semiconductor optical switch |
| CN1464603A (en) * | 2002-06-21 | 2003-12-31 | 中国科学院半导体研究所 | Multi-quantum well waveguide butt coupling method |
| CN1901301A (en) * | 2005-07-21 | 2007-01-24 | 中国科学院半导体研究所 | High injection efficiency high power 808 nm quantum trap semiconductor laser structure |
| CN102545047A (en) * | 2011-12-31 | 2012-07-04 | 武汉华工正源光子技术有限公司 | Multiple-quantum well waveguide butt-coupling method |
| CN102611003A (en) * | 2012-04-11 | 2012-07-25 | 中国科学院半导体研究所 | Quantum dot cascade laser |
| CN103887709A (en) * | 2014-03-20 | 2014-06-25 | 中国科学院半导体研究所 | Asymmetric metal grating and coating semiconductor multi-quantum-well waveguide laser |
| CN106058639A (en) * | 2016-06-20 | 2016-10-26 | 中国科学院半导体研究所 | Method for manufacturing semiconductor mode-locked laser based full quantum well selective area epitaxy |
| CN107248697A (en) * | 2017-07-26 | 2017-10-13 | 福建中科光芯光电科技有限公司 | A kind of preparation method of long wavelength's InP-base DFB semiconductor laser tube core |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108646348A (en) | 2018-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7321707B2 (en) | Electromagnetic wave frequency filter | |
| US8064741B2 (en) | Optical coupling device | |
| US6571039B1 (en) | Optical waveguide having a weakly-confining waveguide section and a strongly-confining waveguide section optically coupled by a tapered neck | |
| US8965156B2 (en) | Beam combiner | |
| JP3349950B2 (en) | Wavelength demultiplexing circuit | |
| US10585243B2 (en) | High refractive index waveguides and method of fabrication | |
| Danaie et al. | Design of a high-bandwidth Y-shaped photonic crystal power splitter for TE modes | |
| US20030012493A1 (en) | High density integrated optical chip | |
| WO2009106140A1 (en) | Optical mode transformer, in particular for coupling an optical fiber and a high-index contrast waveguide | |
| KR20010012625A (en) | Optical devices and methods of fabrication thereof | |
| US20090180731A1 (en) | Photonic coupler | |
| US6931180B2 (en) | Method and apparatus for compactly coupling an optical fiber and a planar optical waveguide | |
| US20040013384A1 (en) | Optical waveguide structure | |
| US20040086244A1 (en) | Optical waveguide structure | |
| CN108627915A (en) | A kind of deep ultraviolet multi-quantum well waveguide | |
| CN208172295U (en) | A kind of deep ultraviolet multi-quantum well waveguide | |
| Yi et al. | Sharp bending of on-chip silicon Bragg cladding waveguide with light guiding in low index core materials | |
| CN108646348B (en) | A kind of deep ultraviolet multi-quantum well waveguide production method | |
| CN108646345B (en) | Method for manufacturing deep ultraviolet planar optical waveguide | |
| US20030035227A1 (en) | Optical wavelength-demultiplexer with an improved optical lens | |
| CN116256842B (en) | Polarization Beam Splitter Rotator | |
| CN104090331B (en) | Efficient compact rectangular ring resonant cavity waveguide type optical filter | |
| CN114415289B (en) | Low-loss and wide-bandwidth wavelength multiplexer/demultiplexer based on silicon nitride platform | |
| Kiyat et al. | Polarization characteristics of compact SOI rib waveguide racetrack resonators | |
| CN208172288U (en) | A kind of deep ultraviolet planar optical waveguide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |