CN108628109A - Lithographic exposure apparatus and method of photolithographic exposure - Google Patents
Lithographic exposure apparatus and method of photolithographic exposure Download PDFInfo
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- CN108628109A CN108628109A CN201810418147.0A CN201810418147A CN108628109A CN 108628109 A CN108628109 A CN 108628109A CN 201810418147 A CN201810418147 A CN 201810418147A CN 108628109 A CN108628109 A CN 108628109A
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- bandwidth
- light beam
- exposure
- graph area
- light source
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention relates to a kind of lithographic exposure apparatus, it is related to ic manufacturing technology, the lithographic exposure apparatus includes light source, mask and wafer, the mask is between the light source and the wafer, the light source irradiates the mask for sending out light beam, wherein, the light source sends out the light beam of at least two bandwidth；So that lithographic exposure apparatus is maximized for the process window of the different zones of mask plate, and then improve the integrated artistic window of photoetching process.
Description
Technical field
The present invention relates to a kind of ic manufacturing technology more particularly to a kind of preferable photolithographic exposures of integrated artistic window
Equipment.
Background technology
Semicon industry always it is expected to obtain the higher IC products of integrated level, to improve the integrated of integrated circuit
Degree is it is necessary to constantly reduce critical size, and the figure designed becomes increasingly complex.Photoetching technique is the basic work of all semiconductor manufacturings
The processing step of most critical in skill.Photoetching technique utilizes ultraviolet light by the photoetching in the pattern transfer to crystal column surface on mask
On glue, then by photoetching development the graphical presentation in photoresist is come out, then uses etching technics pattern imaging in photoresist
On following wafer, it can be seen that, the size with photoetching process for being imaged onto the critical size of figure on wafer are closely related.
For the photolithography process that one meets device volume production, not only to have to figure all on mask clear
It parses clearly, and to ensure the process window for having enough.Technique is by various perturbations in process window characterization photoetching process
When remain to keep stablizing and to figure clearly analytic ability.Process window is bigger to indicate anti-external perturbation ability relatively more
By force, technology stability is relatively better.Since the figure in mask plate is according to the electric circuit diagram design of integrated circuit, the electricity of integrated circuit
Road figure has prodigious difference in different zones.Specifically, please referring to Fig.1 A, 1B, 1C and 1D, Figure 1A illustrates for intensive graph area
Figure, Figure 1B are sparse graph area schematic diagram, and Fig. 1 C are isolation pattern area schematic diagram, and Fig. 1 D are complex figure area schematic diagram.Such as figure
Shown in 1A, in certain area S, there are a large amount of graph area 10 and a large amount of light-blocking region 20, and graph area 10 and light-blocking region 20
Arrange according to certain rules, because graph area 10 than comparatively dense thus referred to as intensive graph area.As shown in Figure 1B, in certain area S,
There are a certain number of graph areas 10 and a certain number of light-blocking regions 20, and graph area 10 and light-blocking region 20 are arranged according to certain rules
Cloth, but 10 negligible amounts of graph area, therefore referred to as sparse graph area.As shown in Figure 1 C, in certain area S, there is only a figures
Shape area 10, therefore referred to as isolation pattern area.As shown in figure iD, in certain area S, the arrangement of graph area 10 and light-blocking region 20 is not advised
Then, i.e., it not arranges according to certain rules, therefore referred to as complex figure area.It is fixed in light source, intensive graph area, complexity
The process window of graph area, sparse graph area and isolation pattern area has very big difference, constrains the whole work of existing photoetching process
Skill window.
In the prior art, detection photoetching process hotspot graph shape is gone by design technology windows detecting method (PWQ), for this
A little figures correct optical approach effect (OPC) again, correct update based on optical approach effect (OPC) and publish mask plate again,
Repeatedly cycle, to ensure that all figures have enough process windows.But this method needs to spend a large amount of manpower and cost,
For different products, it is likely to need such cycle verification, and optical approach effect (OPC) corrects adjustable space
It is limited, target is unable to reach for certain special graphs, is unable to meet production needs.
Therefore in integrated circuit fabrication, need to design a kind of method for the integrated artistic window improving photoetching process.
Invention content
The purpose of the present invention is to provide a kind of lithographic exposure apparatus, to obtain a kind of preferable photoetching of integrated artistic window
Exposure sources.
Lithographic exposure apparatus provided by the invention, including：Light source, mask and wafer, the mask are located at the light
Between source and the wafer, the light source irradiates the mask for sending out light beam, wherein the light source sends out at least two
The light beam of bandwidth.
Further, the mask includes first kind graph area and the second class graph area, irradiates the First Kind Graph
The bandwidth of the light beam in shape area is different from irradiating the bandwidth of the light beam of second class graph area.
Further, the first kind graph area is intensive graph area, and the second class figure is sparse graph area, again
Miscellaneous graph area or isolation pattern area, the bandwidth for irradiating the light beam of second class graph area are less than the irradiation first kind graph area
Light beam bandwidth.
Further, ranging from 50~350fm of the bandwidth for the light beam that the light source is sent out.
Further, the lithographic exposure apparatus is ArF photoetching equipments or EUV lithography board.
A kind of method of photolithographic exposure of also offer of the present invention more further, including：Step S1 provides an exposure formula to light
In the light source for carving exposure sources；Step S2 irradiates mask plate with the exposure formula, the pattern transfer on the mask plate is arrived
Crystal column surface；Step S3 detects the crystal column surface by defects detection means and whether there is hot spot figure；And step S4,
Judge that the crystal column surface whether there is hot spot figure, if so, S5 is entered step, if it is not, then entering step S6, wherein step
Rapid S5 is then to be directed to hot spot figure and set in newer light beam bandwidth to the exposure formula, at this time the exposure formula instruction
Light source sends out the light beam of at least two bandwidth, and enters step S2；Step S6 is, then with the exposure formula amount of progress in step S2
Produce the photolithographic exposure technique of product.
Further, the mask includes first kind graph area and the second class graph area, irradiates the First Kind Graph
The bandwidth of the light beam in shape area is different from irradiating the bandwidth of the light beam of second class graph area.
Further, the defects detection means are including the use of Defect Scanning device scan crystal column surface.
Further, step S6 further includes step S61, when carrying out the photolithographic exposure technique of volume production product, switches light beam
The number of bandwidth be N, wherein N >=1.
Further, the bandwidth range of the light beam is 50~350fm.
Further, formula is exposed in step S1 indicate that the light source is sent out including a kind of light beam of bandwidth.
Lithographic exposure apparatus and its integrated artistic window optimization method provided by the invention, lithographic exposure apparatus is by being directed to
Different graphic region sends out the light beam of different bandwidth on mask plate, optimizes the process window of each graphics field on mask plate, into
And improve integrated artistic window.
Description of the drawings
Figure 1A is intensive graph area schematic diagram.
Figure 1B is sparse graph area schematic diagram.
Fig. 1 C are isolation pattern area schematic diagram.
Fig. 1 D are complex figure area schematic diagram.
Fig. 2 is the schematic diagram of the lithographic exposure apparatus of one embodiment of the invention.
Fig. 3 is the oscillogram of the light beam bandwidth and process window and critical size of one embodiment of the invention.
Fig. 4 is the method for photolithographic exposure flow chart of one embodiment of the invention.
Fig. 5 is the distribution schematic diagram of the lithography mask version and light beam bandwidth of one embodiment of the invention.
Fig. 6 is the relation schematic diagram of the hot spot figure and process window of one embodiment of the invention.
The reference numerals are as follows for main element in figure：
100, light source；200, mask；300, wafer；110, light beam.
Specific implementation mode
Referring to Fig. 2, Fig. 2 is the schematic diagram of the lithographic exposure apparatus of one embodiment of the invention.As shown in Fig. 2, of the invention
The lithographic exposure apparatus of one embodiment includes light source 100, mask 200 and wafer 300, and mask 200 is located at light source 100 and crystalline substance
Between circle 300.Mask 200 inlays lighttight chromium and forms figure mainly with the quartz of light transmission for substrate.When exposure, light beam
110 send out irradiation mask 200 from light source 100, by the pattern transfer on mask plate 200 to the surface of wafer 300, to complete light
Carve exposure technology.Further, light source 100 sends out the light beam of at least two bandwidth, for example, in one embodiment, light source 100
The bandwidth of the light beam sent out when the sparse or isolated region of figure on scanning mask 200 is different from scanning 200 upper figure of mask
The bandwidth of the light beam sent out when the intensive region of shape.
In this way, the lithographic exposure apparatus of the present invention, light source send out the light beam of different bandwidth to carry out photoetching process, make its needle
The process window of the different zones of mask plate is maximized, and then improves the integrated artistic window of photoetching process.
Referring to Fig. 3, Fig. 3 is the oscillogram of the light beam bandwidth and process window and critical size of one embodiment of the invention.
As shown in figure 3, for intensive graph area, process window and critical size on mask plate 200 with the change of the bandwidth of light beam 110
The variation changed and generated is little, but for sparse graph area on mask plate 200, process window with light beam 110 bandwidth
Reduce and increase, critical size increases also with the reduction of the bandwidth of light beam 110.However, in integrated circuit fabrication, it is desirable to
Critical size constantly reduces, and process window constantly becomes larger, therefore each region need to select it to correspond to bandwidth according to figure situation
Light beam is to obtain ideal process window and critical size.With the development of integrated circuit, integrated level is higher and higher, single core
The integrated component number of piece is even up to tens, and the complexity of circuit is also increasing, the integrated circuit of a volume production
On figure may include multiple intensive graph areas, complex figure area, sparse graph area and isolation pattern area, and each region
Graphics intensive or degree of rarefication are different, and intensive graph area can be known as to first kind graph area, complex figure area, sparse graph area and orphan
Vertical graph area is known as the second class graph area, and different graphics fields is relative to its process window of the light beam of same band and crucial ruler
Very little difference, and it is also different with the change rate that light beam bandwidth changes.Therefore, light source 100 is made to send out difference in one embodiment of the invention
The light beam 110 of bandwidth irradiates the different zones of mask plate 200 so that the process window and critical size in each region optimize, into
And preferably integrated artistic window is obtained, the quantity of hot spot figure is reduced, optical approach effect (OPC) amendment is reduced and covers
The number that film version is published again saves time and the cost of photoetching process exploitation.As shown in figure 3, in an embodiment of the present invention, shining
The bandwidth for penetrating the light beam of sparse graph area is less than the bandwidth for the light beam for irradiating intensive graph area, isolation pattern area and complex figure area
It is similar to sparse graph area, the smaller bandwidth of use.
The present invention also provides a kind of lithographic exposure apparatus integrated artistic window optimization methods, referring to Fig. 4, Fig. 4 is this hair
The method of photolithographic exposure flow chart of a bright embodiment.The lithographic exposure apparatus integrated artistic window optimization method includes：Step S1,
It provides in an exposure formula to the light source 100 of lithographic exposure apparatus.It include pre-set light beam bandwidth point in the exposure formula
Butut, the light beam bandwidth distribution figure are corresponding with the figure situation of different zones on mask plate 200.Specifically, referring to Fig. 5, Fig. 5
For the distribution schematic diagram of the lithography mask version and light beam bandwidth of one embodiment of the invention.As shown in figure 5, X-axis and Y-axis define light extraction
The different zones for carving mask plate 200, such as A1, A2, A3 and A4, different zones represent different figure situation namely different quick-fried
Light region, Z axis correspond to the bandwidth value of light beam.As shown in figure 5, the corresponding light beam bandwidth in difference exposure area is different, so that each
The process window in region optimizes, and in turn, obtains preferably integrated artistic window.Certainly, exposure formula at this time indicates light source
It can also include various bandwidth that 100 light beams 110 that send out, which may include a kind of bandwidth,.Step S2 is covered with exposure formula irradiation
Film version 200, by the pattern transfer on mask plate 200 to 300 surface of wafer.Step S3 detects wafer by defects detection means
300 surfaces whether there is hot spot figure (i.e. the insufficient region of process window).Step S4 judges that the crystal column surface whether there is
If hot spot figure enters step S5 there are hot spot figure, and newer light beam bandwidth is set to exposing formula for hot spot figure
In, formula instruction light source is exposed at this time and sends out the light beam of at least two bandwidth, and enters step S2.More specifically, please referring to figure
6, Fig. 6 be the relation schematic diagram of the hot spot figure and process window of one embodiment of the invention.As shown in fig. 6, abscissa is exposure
Depth of focus amplitude, ordinate is exposure capability allowance (%), the light beam under specific bandwidth depth of focus amplitude -- exposure capability is wide
The area in the region that nargin indicatrix is surrounded with abscissa and ordinate represents process window, the bigger characterization process window of area
It is bigger, as shown in fig. 6, process window of a certain hot spot figure under the light beam of 200 bandwidth is more than under the light beam of 300 bandwidth
Process window, therefore can be arranged according to different hot spot figures in different light beam bandwidth correction value to exposure formula.If not depositing
In hot spot figure, then S6 is entered step, the photolithographic exposure technique of volume production product is carried out with the exposure formula in step S2.So follow
Ring optimizes to generate the distribution map (Fig. 5) between optimal light beam bandwidth and lithography mask version, forms the exposure of lithographic exposure apparatus
Light path formula.When lithographic exposure apparatus is exposed, according to the exposure formula, i.e., point between light beam bandwidth and lithography mask version
The bandwidth of the light beam 110 of Butut toggle lights 100 optimizes hot spot figure process window, to improve integrated artistic window, meets life
Production needs.In one embodiment of the invention, step S6 carries out the photolithographic exposure work of volume production product with the exposure formula in step S2
Skill further includes step S61, and when carrying out the photolithographic exposure technique of volume production product, the number for switching the bandwidth of light beam 110 is n times,
Middle N >=1, namely light source 100 sends out the light beam of at least two bandwidth in exposure technology.In one embodiment of the invention, light beam 110
Bandwidth switching ranging from 50~350fm, the bandwidth of broader light beam 110 can be also set certainly according to the demand of different product
Range, the present invention do not limit this.
In one embodiment of the invention, step S3 detects 300 surface of wafer by defects detection means and whether there is hotspot graph
Shape, wherein defects detection means do not limit this including the use of 300 surface of Defect Scanning device scan wafer, the present invention,
Other defects detection means are suitable for the present invention.
In one embodiment of the invention, lithographic exposure apparatus of the invention can be applied to ArF photoetching equipments and EUV lithography machine
Platform, the present invention do not limit the concrete type of photoetching equipment, and the adjustable photoetching equipment of bandwidth of all light beams is applicable in.
In conclusion lithographic exposure apparatus is by sending out the light beam of different bandwidth for different graphic region on mask plate,
Optimize the process window of each graphics field on mask plate, and then improves integrated artistic window.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Present invention has been described in detail with reference to the aforementioned embodiments for pipe, it will be understood by those of ordinary skill in the art that：Its according to
So can with technical scheme described in the above embodiments is modified, either to which part or all technical features into
Row equivalent replacement；And these modifications or replacements, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of lithographic exposure apparatus, which is characterized in that including：One light source, a mask and a wafer, the mask are located at
Between the light source and the wafer, the light source irradiates the mask for sending out light beam, wherein the light source send out to
The light beam of few two kinds of bandwidth.
2. lithographic exposure apparatus according to claim 1, which is characterized in that the mask include first kind graph area and
Second class graph area, the bandwidth for irradiating the light beam of the first kind graph area are different from irradiating the light beam of second class graph area
Bandwidth.
3. lithographic exposure apparatus according to claim 2, which is characterized in that the first kind graph area is intensive figure
Area, the second class figure are sparse graph area, complex figure area or isolation pattern area, irradiate the light of second class graph area
The bandwidth of beam is less than the bandwidth for the light beam for irradiating the first kind graph area.
4. lithographic exposure apparatus according to claim 1, which is characterized in that the model of the bandwidth for the light beam that the light source is sent out
It encloses for 50~350fm.
5. a kind of method of photolithographic exposure, which is characterized in that including：
Step S1 is provided in an exposure formula to the light source of lithographic exposure apparatus；
Step S2 irradiates a mask plate, by the pattern transfer on the mask plate a to crystal column surface with the exposure formula；
Step S3 detects the crystal column surface by defects detection means and whether there is hot spot figure；And
Step S4 judges that the crystal column surface whether there is hot spot figure, if so, S5 is entered step, if it is not, then entering step
S6；
Wherein, step S5 is then to be directed to hot spot figure and set in newer light beam bandwidth to the exposure formula, the exposure at this time
Light path formula instruction light source sends out the light beam of at least two bandwidth, and enters step S2；Step S6 is, then with the exposure in step S2
Formula carries out the photolithographic exposure technique of volume production product.
6. method of photolithographic exposure according to claim 5, which is characterized in that the mask include first kind graph area and
Second class graph area, the bandwidth for irradiating the light beam of the first kind graph area are different from irradiating the light beam of second class graph area
Bandwidth.
7. method of photolithographic exposure according to claim 5, which is characterized in that the defects detection means are including the use of defect
Scanning device scanning wafer surface.
8. method of photolithographic exposure according to claim 5, which is characterized in that step S6 further includes step S61, carries out volume production
When the photolithographic exposure technique of product, the number for switching the bandwidth of light beam is N, wherein N >=1.
9. method of photolithographic exposure according to claim 8, which is characterized in that the bandwidth range of the light beam be 50~
350fm。
10. method of photolithographic exposure according to claim 5, which is characterized in that described in the exposure formula instruction in step S1
Light source sends out a kind of light beam of bandwidth.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810418147.0A CN108628109B (en) | 2018-05-04 | 2018-05-04 | Photoetching exposure equipment and photoetching exposure method |
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| CN201810418147.0A CN108628109B (en) | 2018-05-04 | 2018-05-04 | Photoetching exposure equipment and photoetching exposure method |
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| CN108628109B CN108628109B (en) | 2021-06-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113504710A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | Multiple exposure method in photoetching process |
| CN116500871A (en) * | 2023-06-26 | 2023-07-28 | 合肥晶合集成电路股份有限公司 | Photoetching method and system |
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| CN101080807A (en) * | 2005-07-01 | 2007-11-28 | 株式会社尼康 | Exposure apparatus, exposure method, device manufacturing method, and system |
| CN102834988A (en) * | 2010-04-07 | 2012-12-19 | 西默股份有限公司 | Method and apparatus for controlling light bandwidth |
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| CN113504710A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | Multiple exposure method in photoetching process |
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| CN116500871A (en) * | 2023-06-26 | 2023-07-28 | 合肥晶合集成电路股份有限公司 | Photoetching method and system |
| CN116500871B (en) * | 2023-06-26 | 2023-09-26 | 合肥晶合集成电路股份有限公司 | Photoetching method and system |
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