CN108598070B - A double-chip chip-level LED packaging structure and manufacturing method thereof - Google Patents
A double-chip chip-level LED packaging structure and manufacturing method thereof Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000011347 resin Substances 0.000 claims abstract description 71
- 229920005989 resin Polymers 0.000 claims abstract description 71
- 229910000679 solder Inorganic materials 0.000 claims abstract description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
- 239000010949 copper Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 10
- 239000003086 colorant Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000000748 compression moulding Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
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- Led Device Packages (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
本发明提供了一种双芯片的芯片级LED封装结构及其制作方法,本发明利用双芯片发射不同的光去激发不同的荧光层,再将相邻的光进行混合出光,可以实现色温的灵活调整;具有焊料层的铜柱实现了焊接的便捷性,且同时提高了固化板的强度,增强了其散热效果;荧光层包覆狭缝内的树脂块的侧面,防止侧面未经激发的光直接出射。
The invention provides a two-chip chip-level LED packaging structure and a manufacturing method thereof. The invention uses two chips to emit different lights to excite different fluorescent layers, and then mixes adjacent lights to emit light, so that the flexibility of color temperature can be realized. Adjustment; the copper pillar with solder layer realizes the convenience of welding, and at the same time improves the strength of the cured board and enhances its heat dissipation effect; the fluorescent layer covers the side of the resin block in the slit to prevent unexcited light from the side Shoot straight out.
Description
技术领域technical field
本发明涉及LED封装领域,尤其涉及一种双芯片的芯片级LED封装结构及其制造方法。The invention relates to the field of LED packaging, in particular to a double-chip chip-level LED packaging structure and a manufacturing method thereof.
背景技术Background technique
对于芯片级的LED封装结构而言,多为单个芯片的封装,其封装结构简单,但是色温范围单一,出光角度多为单面的,不利于光的有效利用。For the chip-level LED packaging structure, most of them are single-chip packaging. The packaging structure is simple, but the color temperature range is single, and the light output angle is mostly single-sided, which is not conducive to the effective use of light.
发明内容Contents of the invention
基于解决上述问题,本发明提供了一种一种双芯片的芯片级LED封装结构的制造方法,包括:Based on solving the above problems, the present invention provides a method for manufacturing a two-chip chip-level LED packaging structure, including:
(1)模塑形成一透明树脂固化板,所述固化板上设有多个凹槽;(1) molding to form a transparent resin curing plate, the curing plate is provided with a plurality of grooves;
(2)将多个倒装LED芯片分别卡入所述凹槽内;(2) Insert multiple flip-chip LED chips into the grooves respectively;
(3)在所述第一表面上形成第一树脂层,所述第一树脂层完全密封所述LED芯片;(3) forming a first resin layer on the first surface, the first resin layer completely sealing the LED chip;
(4)在所述LED芯片之间的所述第一树脂层位置形成多个狭缝,所述狭缝将所述第一树脂层分割成多个树脂块,所述树脂块分别密封单个LED芯片;(4) A plurality of slits are formed at the position of the first resin layer between the LED chips, and the slits divide the first resin layer into a plurality of resin blocks, and the resin blocks respectively seal a single LED chip;
(5)在所述树脂块上和狭缝内形成荧光层,所述荧光层包括能够吸收所述第一波长发射光的第一层和能够吸收所述第二发射光的第二层;(5) forming a fluorescent layer on the resin block and in the slit, the fluorescent layer comprising a first layer capable of absorbing emitted light of the first wavelength and a second layer capable of absorbing emitted light of the second wavelength;
(6)在所述荧光层上形成第二树脂层,所述树脂层覆盖所述荧光层。(6) A second resin layer is formed on the fluorescent layer, and the resin layer covers the fluorescent layer.
根据本发明的实施例,在步骤(1)中,所述固化板具有相对的第一表面和第二表面,所述第一表面上形成有多个凹槽,所述固化板内具有多个铜柱,所述铜柱的上端和下端设有焊料层,所述上端的焊料层与所述凹槽的底壁齐平且从所述凹槽露出而所述下端的焊料层未从所述第二表面露出。According to an embodiment of the present invention, in step (1), the curing plate has an opposite first surface and a second surface, a plurality of grooves are formed on the first surface, and a plurality of grooves are formed in the curing plate. Copper column, the upper end and the lower end of the copper column are provided with a solder layer, the solder layer at the upper end is flush with the bottom wall of the groove and exposed from the groove while the solder layer at the lower end is not exposed from the groove. The second surface is exposed.
根据本发明的实施例,在步骤(2)中,通过所述上端的焊料层焊接至所述铜柱上,所述LED芯片包括具有第一波长发射光的第一LED芯片以及具有第二波长发射光的第二LED芯片,且两种不同颜色的LED芯片交替排布。According to an embodiment of the present invention, in step (2), the solder layer passing through the upper end is soldered to the copper pillar, and the LED chip includes a first LED chip emitting light with a first wavelength and a first LED chip with a second wavelength. The second LED chip emits light, and the LED chips of two different colors are alternately arranged.
根据本发明的实施例,在步骤(6)之后还包括:减薄所述第二表面以使得所述铜柱的下端的焊料层从所述第二表面露出;以及对所述下端的焊料层进行回流,形成焊球。According to an embodiment of the present invention, after step (6), it further includes: thinning the second surface so that the solder layer at the lower end of the copper pillar is exposed from the second surface; and removing the solder layer at the lower end Reflow is performed to form solder balls.
根据本发明的实施例,所述荧光层通过压模工艺形成于所述树脂块上以及狭缝内。According to an embodiment of the present invention, the fluorescent layer is formed on the resin block and in the slit by a compression molding process.
本发明还提供了一种双芯片的芯片级LED封装结构,包括:The present invention also provides a two-chip chip-level LED packaging structure, including:
透明树脂固化板,在其上形成有多个凹槽;a transparent resin curing plate on which a plurality of grooves are formed;
多个倒装LED芯片,分别卡置于所述凹槽内;A plurality of flip-chip LED chips are respectively stuck in the grooves;
第一树脂层,所述第一树脂层完全密封所述LED芯片,在所述LED芯片之间的所述第一树脂层位置形成有多个狭缝;A first resin layer, the first resin layer completely seals the LED chips, and a plurality of slits are formed at positions of the first resin layer between the LED chips;
荧光层,形成在所述树脂块上和狭缝内,所述荧光层包括能够吸收所述第一波长发射光的第一层和能够吸收所述第二发射光的第二层;a fluorescent layer formed on the resin block and in the slit, the fluorescent layer includes a first layer capable of absorbing emitted light of the first wavelength and a second layer capable of absorbing emitted light of the second wavelength;
第二树脂层,形成并覆盖在所述荧光层上。The second resin layer is formed and covered on the fluorescent layer.
根据本发明的实施例,所述固化板、第一树脂层和第二树脂层为相同的透明树脂材料。According to an embodiment of the present invention, the cured plate, the first resin layer and the second resin layer are made of the same transparent resin material.
根据本发明的实施例,所述第一芯片为蓝光LED芯片,所述第二芯片为红光LED芯片。According to an embodiment of the present invention, the first chip is a blue LED chip, and the second chip is a red LED chip.
根据本发明的实施例,所述凹槽的深度小于所述LED芯片的高度。According to an embodiment of the present invention, the depth of the groove is smaller than the height of the LED chip.
根据本发明的实施例,还包括焊球,形成于所述铜柱的下端。According to an embodiment of the present invention, solder balls are further included, formed on the lower ends of the copper pillars.
本发明的优点如下:The advantages of the present invention are as follows:
(1)其利用双芯片发射不同的光去激发不同的荧光层,再将相邻的光进行混合出光,可以实现色温的灵活调整;(1) It uses two chips to emit different light to excite different fluorescent layers, and then mixes adjacent light to emit light, which can realize flexible adjustment of color temperature;
(2)具有焊料层的铜柱实现了焊接的便捷性,且同时提高了固化板的强度,增强了其散热效果;(2) The copper pillar with solder layer realizes the convenience of welding, and at the same time improves the strength of the cured board and enhances its heat dissipation effect;
(3)荧光层包覆狭缝内的树脂块的侧面,防止侧面未经激发的光直接出射。(3) The fluorescent layer covers the sides of the resin block in the slit to prevent the unexcited light from the sides from directly emitting.
附图说明Description of drawings
图1-8为本发明制造双芯片的芯片级LED封装结构的示意图;Fig. 1-8 is the schematic diagram of the chip level LED package structure that the present invention manufactures two chips;
图9为本发明的铜柱回流前后的示意图。FIG. 9 is a schematic diagram of the copper pillar before and after reflow of the present invention.
具体实施方式Detailed ways
参见图1-9,本发明的双芯片的芯片级LED封装结构的制造方法,包括:Referring to Figures 1-9, the manufacturing method of the double-chip chip-level LED packaging structure of the present invention includes:
参见图1,模塑形成一透明树脂固化板1,所述固化板1具有相对的第一表面和第二表面,所述第一表面上形成有多个凹槽2,所述固化板1内具有多个铜柱3,所述铜柱3的上端和下端设有焊料层11(参见图9中未回流的铜柱3),所述上端的焊料层11与所述凹槽2的底壁齐平且从所述凹槽2露出而所述下端的焊料层11未从所述第二表面露出;Referring to Fig. 1, molding forms a transparent resin cured plate 1, and described cured plate 1 has opposite first surface and second surface, and a plurality of grooves 2 are formed on the described first surface, in described cured plate 1 There are a plurality of copper pillars 3, the upper and lower ends of the copper pillars 3 are provided with a solder layer 11 (see the unreflowed copper pillar 3 in Figure 9), and the solder layer 11 at the upper end is in contact with the bottom wall of the groove 2 flush and exposed from the groove 2 while the solder layer 11 at the lower end is not exposed from the second surface;
参见图2,将多个倒装LED芯片分别卡入所述凹槽2内,并通过所述上端的焊料层11焊接至所述铜柱3上,所述LED芯片包括具有第一波长发射光的第一LED芯片4以及具有第二波长发射光的第二LED芯片5,且两种不同颜色的LED芯片交替排布;Referring to FIG. 2 , a plurality of flip-chip LED chips are snapped into the grooves 2 respectively, and soldered to the copper pillar 3 through the solder layer 11 at the upper end, and the LED chips include light emitting light having a first wavelength. The first LED chip 4 and the second LED chip 5 having the second wavelength of light emission, and the LED chips of two different colors are arranged alternately;
参见图3,在所述第一表面上形成第一树脂层6,所述第一树脂层6完全密封所述LED芯片;Referring to FIG. 3, a first resin layer 6 is formed on the first surface, and the first resin layer 6 completely seals the LED chip;
参见图4,在所述LED芯片之间的所述第一树脂层6位置形成多个狭缝7,所述狭缝7将所述第一树脂层6分割成多个树脂块,所述树脂块分别密封单个LED芯片;Referring to FIG. 4 , a plurality of slits 7 are formed at the position of the first resin layer 6 between the LED chips, and the slits 7 divide the first resin layer 6 into a plurality of resin blocks, and the resin Each block separately seals a single LED chip;
参见图5,在所述树脂块上和狭缝7内形成荧光层8,所述荧光层8包括能够吸收所述第一波长发射光的第一层和能够吸收所述第二发射光的第二层;Referring to FIG. 5, a fluorescent layer 8 is formed on the resin block and in the slit 7, and the fluorescent layer 8 includes a first layer capable of absorbing emitted light of the first wavelength and a first layer capable of absorbing emitted light of the second wavelength. second floor;
参见图6,在所述荧光层8上形成第二树脂层9,所述树脂层9覆盖所述荧光层8;Referring to FIG. 6, a second resin layer 9 is formed on the fluorescent layer 8, and the resin layer 9 covers the fluorescent layer 8;
参见图7,减薄所述第二表面以使得所述铜柱3的下端的焊料层11从所述第二表面露出;Referring to FIG. 7, the second surface is thinned so that the solder layer 11 at the lower end of the copper pillar 3 is exposed from the second surface;
参见图8,对所述下端的焊料层11进行回流,形成焊球10。Referring to FIG. 8 , the solder layer 11 at the lower end is reflowed to form solder balls 10 .
其中,所述固化板1、第一树脂层6和第二树脂层9为相同的透明树脂材料。所述第一芯片4为蓝光LED芯片,所述第二芯片5为红光LED芯片。所述凹槽2的深度小于所述LED芯片的高度。所述荧光层8通过压模工艺形成于所述树脂块上以及狭缝内。Wherein, the cured plate 1 , the first resin layer 6 and the second resin layer 9 are made of the same transparent resin material. The first chip 4 is a blue LED chip, and the second chip 5 is a red LED chip. The depth of the groove 2 is smaller than the height of the LED chip. The fluorescent layer 8 is formed on the resin block and in the slit by a compression molding process.
参见图8,本发明根据上述方法提供了一种双芯片的芯片级LED封装结构,包括:Referring to Fig. 8, the present invention provides a two-chip chip-level LED packaging structure according to the above method, including:
透明树脂固化板,所述固化板具有相对的第一表面和第二表面,所述第一表面上形成有多个凹槽,所述固化板内具有多个铜柱,所述铜柱的上端设有焊料层,所述上端的焊料层与所述凹槽的底壁齐平且从所述凹槽露出,所述铜柱的下端从所述第二表面露出;A transparent resin curing plate, the curing plate has a first surface and a second surface opposite, a plurality of grooves are formed on the first surface, a plurality of copper pillars are arranged in the curing plate, and the upper ends of the copper pillars A solder layer is provided, the solder layer at the upper end is flush with the bottom wall of the groove and exposed from the groove, and the lower end of the copper pillar is exposed from the second surface;
多个倒装LED芯片,分别卡置于所述凹槽内,并通过所述上端的焊料层焊接至所述铜柱上,所述LED芯片包括具有第一波长发射光的第一LED芯片以及具有第二波长发射光的第二LED芯片,且两种不同颜色的LED芯片交替排布;A plurality of flip-chip LED chips are respectively stuck in the grooves and soldered to the copper pillars through the solder layer at the upper end, the LED chips include a first LED chip emitting light with a first wavelength and There is a second LED chip emitting light at a second wavelength, and the LED chips of two different colors are arranged alternately;
第一树脂层,形成在所述第一表面上,所述第一树脂层完全密封所述LED芯片,在所述LED芯片之间的所述第一树脂层位置形成有多个狭缝,所述狭缝将所述第一树脂层分割成多个树脂块,所述树脂块分别密封单个LED芯片;A first resin layer is formed on the first surface, the first resin layer completely seals the LED chips, and a plurality of slits are formed at positions of the first resin layer between the LED chips, so The slit divides the first resin layer into a plurality of resin blocks, and the resin blocks respectively seal a single LED chip;
荧光层,形成在所述树脂块上和狭缝内,所述荧光层包括能够吸收所述第一波长发射光的第一层和能够吸收所述第二发射光的第二层;a fluorescent layer formed on the resin block and in the slit, the fluorescent layer includes a first layer capable of absorbing emitted light of the first wavelength and a second layer capable of absorbing emitted light of the second wavelength;
第二树脂层,形成并覆盖在所述荧光层上;a second resin layer formed and covered on the fluorescent layer;
焊球,形成于所述铜柱的下端。Solder balls are formed on the lower ends of the copper pillars.
其中,所述固化板、第一树脂层和第二树脂层为相同的透明树脂材料。所述第一芯片为蓝光LED芯片,所述第二芯片为红光LED芯片。所述凹槽的深度小于所述LED芯片的高度。所述荧光层包裹所述树脂块的顶面和侧面。Wherein, the cured plate, the first resin layer and the second resin layer are made of the same transparent resin material. The first chip is a blue LED chip, and the second chip is a red LED chip. The depth of the groove is smaller than the height of the LED chip. The fluorescent layer wraps the top and side surfaces of the resin block.
最后应说明的是:显然,上述实施例仅仅是为清楚地说明本发明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本发明的保护范围之中。Finally, it should be noted that obviously, the above-mentioned embodiments are only examples for clearly illustrating the present invention, rather than limiting the implementation. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here. However, obvious changes or modifications derived therefrom are still within the protection scope of the present invention.
Claims (10)
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CN201810663241.2A CN108598070B (en) | 2018-06-25 | 2018-06-25 | A double-chip chip-level LED packaging structure and manufacturing method thereof |
PCT/CN2018/103598 WO2020000635A1 (en) | 2018-06-25 | 2018-08-31 | Chip-level led package structure of dual-chip, and manufacturing method therefor |
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WO2020147004A1 (en) * | 2019-01-15 | 2020-07-23 | 泉州三安半导体科技有限公司 | Light emitting diode packaging device and light emitting device |
CN111584695A (en) * | 2019-02-19 | 2020-08-25 | 江苏罗化新材料有限公司 | Heat dissipation type chip-level LED packaging method and packaging structure thereof |
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CN204348754U (en) * | 2014-12-30 | 2015-05-20 | 厦门煜明光电有限公司 | A kind of LED encapsulation structure |
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Denomination of invention: A dual chip chip chip level LED packaging structure and its manufacturing method Granted publication date: 20230718 Pledgee: Jiangsu Nantong Rural Commercial Bank Co.,Ltd. Development Zone sub branch Pledgor: JIANGSU LUOHUA NEW MATERIAL Co.,Ltd. Registration number: Y2024980048463 |