CN108573992A - Display panel, manufacturing method and electronic device using the display panel - Google Patents
Display panel, manufacturing method and electronic device using the display panel Download PDFInfo
- Publication number
- CN108573992A CN108573992A CN201810433451.2A CN201810433451A CN108573992A CN 108573992 A CN108573992 A CN 108573992A CN 201810433451 A CN201810433451 A CN 201810433451A CN 108573992 A CN108573992 A CN 108573992A
- Authority
- CN
- China
- Prior art keywords
- color conversion
- conversion unit
- μled
- display panel
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Abstract
一种显示面板,包括μLED阵列基板、上基板、遮光部以及色彩转换层,所述μLED阵列基板与上基板相对设置,所述μLED阵列基板上设置有多个呈阵列排布且彼此间隔设置的μLED,所述遮光部位于μLED阵列基板与上基板之间且其两侧分别与μLED阵列基板及上基板接触,遮光部对应每一μLED的位置形成有贯穿遮光部的所述两侧的容置孔,使每一μLED容置于一容置孔中,所述遮光部不透光,所述色彩转换层设置于所述上基板朝向μLED阵列基板的表面,色彩转换层包括多个色彩转换单元,每个色彩转换单元位于一容置孔内,且位于同一容置孔中的μLED与色彩转换单元间隔设置,所述色彩转换层含有量子点材料。本发明还提供该显示面板的制备方法及应用该显示面板的电子装置。
A display panel, comprising a μLED array substrate, an upper substrate, a light-shielding portion and a color conversion layer, the μLED array substrate is arranged opposite to the upper substrate, and the μLED array substrate is provided with a plurality of arrays arranged at intervals from each other μLED, the light-shielding part is located between the μLED array substrate and the upper substrate, and its two sides are respectively in contact with the μLED array substrate and the upper substrate. Hole, so that each μLED is accommodated in an accommodating hole, the light-shielding part is opaque, the color conversion layer is arranged on the surface of the upper substrate facing the μLED array substrate, and the color conversion layer includes a plurality of color conversion units Each color conversion unit is located in an accommodating hole, and the μLED located in the same accommodating hole is spaced apart from the color conversion unit, and the color conversion layer contains quantum dot material. The invention also provides a preparation method of the display panel and an electronic device using the display panel.
Description
技术领域technical field
本发明涉及一种显示面板、该显示面板的制备方法及应用该显示面板的电子装置。The invention relates to a display panel, a preparation method of the display panel and an electronic device using the display panel.
背景技术Background technique
微发光二极管(Micro-LED或μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的μLED阵列作为显示像素来实现图像显示的显示器,同大尺寸的户外LED显示屏一样,每一个像素可定址、单独驱动点亮,可以看成是户外LED显示屏的缩小版,将像素点距离从毫米级降低至微米级,μLED显示器和有机发光二极管(Organic Light-Emitting Diode,OLED)显示器一样属于自发光显示器,但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点。本文所述的μLED一般是指尺寸小于200微米的LED。A Micro-LED (Micro-LED or μLED) display is a display that uses a high-density micro-sized μLED array integrated on a substrate as display pixels to display images. Like a large-size outdoor LED display, each The pixels can be addressed and turned on individually, which can be regarded as a reduced version of the outdoor LED display, reducing the pixel distance from millimeters to microns. μLED displays are the same as Organic Light-Emitting Diode (OLED) displays It belongs to self-luminous display, but compared with OLED display, μLED display also has the advantages of better material stability, longer life, and no image burn-in. As used herein, μLEDs generally refer to LEDs with dimensions smaller than 200 microns.
μLED显示器目前有两种主要结构,一种为在有源矩阵背板上通过巨量移转(masstransfer)红色(R)、绿色(G)及蓝色(B)μLED,通过红色(R)、绿色(G)及蓝色(B)μLED直接获得全彩效果;另一种结构为在有源矩阵背板上形成单色(通常为蓝色)μLED,同时设置色彩转换层将蓝光转换得到全彩效果。对于第一种结构,由于巨量移转技术难度大,导致该结构的使用受到一定限制。针对单色μLED与色彩转换层配合的结构,一种现有的色彩转换层是采用荧光粉与粘胶混合,而荧光粉与胶混合的技术方案,由于荧光粉致密度不足且位置散布不均,其光学均匀度与可靠度都不理想。荧光粉常用尺寸为5~15um,无法应用于高分辨率显示器,仅能用于背光模块或低分辨率的显示器。There are currently two main structures for μLED displays. One is to transfer red (R), green (G) and blue (B) μLEDs through mass transfer on the active matrix backplane, and through red (R), Green (G) and blue (B) μLEDs can directly obtain full-color effects; another structure is to form monochrome (usually blue) μLEDs on the active matrix backplane, and set a color conversion layer to convert blue light to full color. colorful effect. For the first structure, due to the difficulty of mass transfer technology, the use of this structure is limited. For the structure of monochromatic μLED and color conversion layer, an existing color conversion layer is to use phosphor powder mixed with viscose, and the technical solution of phosphor powder mixed with glue, due to insufficient density of phosphor powder and uneven distribution , its optical uniformity and reliability are not ideal. The common size of phosphor is 5-15um, which cannot be applied to high-resolution displays, but can only be used in backlight modules or low-resolution displays.
另一种色彩转换层是利用量子点进行色彩转换。量子点,又称纳米晶,一般为球形或类球形,是由半导体材料(通常由IIB~ⅥA或IIIA~VA元素组成)制成的、直径2~20nm的纳米粒子。量子点的激发光谱宽且连续分布,并且量子点的发射光谱窄而对称,颜色可调,光化学稳定性高。量子点的发射光谱可以通过改变量子点的尺寸大小来控制,并且光谱覆盖整个可见光区域。利用量子点作为色彩转换层时是将量子点材料的粉末喷涂于μLED外表面,量子点材料与μLED直接接触,μLED发出的热量直接传递至量子点材料,致使量子点材料因高温光而变质,进而使显示面板的显示质量下降。量子点材料不仅会因高温而被破坏,还会因水、氧的腐蚀而被破坏。Another color conversion layer uses quantum dots for color conversion. Quantum dots, also known as nanocrystals, are generally spherical or quasi-spherical, and are nanoparticles with a diameter of 2-20 nm made of semiconductor materials (usually composed of IIB-VIA or IIIA-VA elements). The excitation spectrum of quantum dots is wide and continuously distributed, and the emission spectrum of quantum dots is narrow and symmetrical, with adjustable colors and high photochemical stability. The emission spectrum of quantum dots can be controlled by changing the size of quantum dots, and the spectrum covers the entire visible light region. When quantum dots are used as the color conversion layer, the powder of quantum dots is sprayed on the outer surface of μLED. The quantum dots are in direct contact with μLEDs, and the heat emitted by μLEDs is directly transferred to the quantum dots, causing the quantum dots to deteriorate due to high-temperature light. Furthermore, the display quality of the display panel is degraded. Quantum dot materials will not only be destroyed by high temperature, but also by water and oxygen corrosion.
发明内容Contents of the invention
有鉴于此,本发明提供一种显示面板,显示面板具有较高的使用寿命。In view of this, the present invention provides a display panel with a relatively high service life.
另,还提供一种该显示面板的制备方法及一种应用该显示面板的电子装置。In addition, a method for preparing the display panel and an electronic device using the display panel are also provided.
一种显示面板,包括μLED阵列基板、上基板、遮光部以及色彩转换层,所述μLED阵列基板与所述上基板相对设置,所述μLED阵列基板上设置有多个呈阵列排布且彼此间隔设置的μLED,所述遮光部位于μLED阵列基板与上基板之间且其两侧分别与μLED阵列基板及上基板接触,遮光部对应每一μLED的位置形成有贯穿遮光部的所述两侧的容置孔,使每一μLED容置于一容置孔中,所述遮光部不透光,所述色彩转换层设置于所述上基板朝向μLED阵列基板的表面,色彩转换层包括多个色彩转换单元,每个色彩转换单元位于一容置孔内,且位于同一容置孔中的μLED与色彩转换单元间隔设置,所述色彩转换层含有量子点材料。A display panel, comprising a μLED array substrate, an upper substrate, a light-shielding portion, and a color conversion layer, the μLED array substrate is arranged opposite to the upper substrate, and the μLED array substrate is provided with a plurality of For the set μLED, the light-shielding part is located between the μLED array substrate and the upper substrate, and its two sides are respectively in contact with the μLED array substrate and the upper substrate. accommodating holes for each μLED to be accommodated in one accommodating hole, the light-shielding portion is opaque, the color conversion layer is disposed on the surface of the upper substrate facing the μLED array substrate, and the color conversion layer includes a plurality of color A conversion unit, each color conversion unit is located in an accommodating hole, and the μLED located in the same accommodating hole is spaced apart from the color conversion unit, and the color conversion layer contains quantum dot material.
一种显示面板的制备方法,包括:A method for preparing a display panel, comprising:
提供一透光的上基板,在上基板表面形成遮光部,该遮光部由不透光材料形成,该遮光部形成有多个贯穿该遮光部的容置孔;A light-transmitting upper substrate is provided, and a light-shielding portion is formed on the surface of the upper substrate. The light-shielding portion is formed of an opaque material, and the light-shielding portion is formed with a plurality of accommodating holes passing through the light-shielding portion;
在该上基板形成有该遮光部的表面形成色彩转换层,所述色彩转换层包括多个色彩转换单元,每个色彩转换单元位于一容置孔内;A color conversion layer is formed on the surface of the upper substrate on which the light-shielding portion is formed, and the color conversion layer includes a plurality of color conversion units, and each color conversion unit is located in an accommodating hole;
提供一μLED阵列基板,该μLED阵列基板设置有多个呈阵列排布且彼此间隔设置的μLED;A μLED array substrate is provided, the μLED array substrate is provided with a plurality of μLEDs arranged in an array and arranged at intervals from each other;
将所述上基板与所述μLED阵列基板对接,使所述遮光部位于μLED阵列基板与上基板之间且其两侧分别与μLED阵列基板及上基板接触,使每一μLED容置于一容置孔中。The upper substrate is docked with the μLED array substrate, so that the light-shielding part is located between the μLED array substrate and the upper substrate and its two sides are respectively in contact with the μLED array substrate and the upper substrate, so that each μLED is accommodated in a container Put in the hole.
一种电子装置,该电子装置包括本体及设置于该本体内的显示面板。An electronic device includes a main body and a display panel arranged in the main body.
本发明的显示面板中,量子点材料置于密闭空间中,封装完成之后,水、氧将难以进入密闭空间中,有效避免量子点材料被水、氧所腐蚀。且,量子点材料与LED不直接接触,LED发出的热量不会直接传递至量子点材料造成量子点材料变质。In the display panel of the present invention, the quantum dot material is placed in a closed space, and after the packaging is completed, water and oxygen will hardly enter the closed space, effectively preventing the quantum dot material from being corroded by water and oxygen. Moreover, the quantum dot material is not in direct contact with the LED, and the heat emitted by the LED will not be directly transferred to the quantum dot material to cause deterioration of the quantum dot material.
附图说明Description of drawings
图1为本发明第一实施例的显示面板的平面示意图。FIG. 1 is a schematic plan view of a display panel according to a first embodiment of the present invention.
图2为图1沿II-II的剖视图。Fig. 2 is a sectional view along II-II of Fig. 1 .
图3为本发明第二实施例的显示面板的截面示意图。FIG. 3 is a schematic cross-sectional view of a display panel according to a second embodiment of the present invention.
图4为应用本发明较佳实施例的显示面板的电子装置示意图。FIG. 4 is a schematic diagram of an electronic device using a display panel according to a preferred embodiment of the present invention.
主要元件符号说明Description of main component symbols
如下具体实施方式将结合上述附图进一步说明本发明。The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.
具体实施方式Detailed ways
为了使本申请所揭示的技术内容更加详尽与完备,可以参照附图以及本发明的下述各种具体实施例,附图中相同的标记代表相同或者相似的元件。然而,本领域的普通技术人员应当理解,下文中所提供的实施例并非用来限制本发明所覆盖的范围。此外,附图仅仅用于示意性地加以说明,并未依照其实际尺寸按比例进行绘制。In order to make the technical content disclosed in this application more detailed and complete, reference may be made to the drawings and the following various specific embodiments of the present invention, and the same symbols in the drawings represent the same or similar elements. However, those skilled in the art should understand that the examples provided below are not intended to limit the scope of the present invention. In addition, the drawings are for illustrative purposes only and are not drawn to scale according to their actual size.
下面参照附图,对本发明的具体实施方式作进一步的详细描述。The specific implementation manners of the present invention will be described in further detail below with reference to the accompanying drawings.
第一实施例first embodiment
请参考图1与图2,图1所示为本发明第一实施例的显示面板的平面示意图,图2所示为图1的显示面板沿着剖视线II-II的剖视示意图。Please refer to FIG. 1 and FIG. 2 , FIG. 1 is a schematic plan view of a display panel according to a first embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of the display panel in FIG. 1 along a section line II-II.
本实施例的显示面板10包括μLED阵列基板12、上基板13、遮光部15以及色彩转换层16。The display panel 10 of this embodiment includes a μLED array substrate 12 , an upper substrate 13 , a light shielding portion 15 and a color conversion layer 16 .
如图2所示,μLED阵列基板12与上基板13相对设置,μLED阵列基板12上设置有多个呈阵列排布且彼此间隔设置的μLED 123,遮光部15位于上基板13与μLED阵列基板12之间且其两侧分别与μLED阵列基板12及上基板13接触,遮光部15具有一定的厚度,且遮光部15对应每一μLED 123的位置形成有贯穿遮光部15的所述两侧的容置孔151,使每一μLED 123容置于一容置孔151中,所述遮光部15不透光。色彩转换层16形成于上基板13朝向μLED阵列基板12的表面,色彩转换层16包括多个色彩转换单元,每个色彩转换单元位于一容置孔151内,且位于同一容置孔中的μLED 123与色彩转换单元间隔设置。μLED阵列基板12用于发出光线以作为显示面板10的显示光源,色彩转换层16内含有量子点材料,其可对μLED阵列基板12发出的光线的颜色进行转换以获得显示所需的色彩,遮光部15可遮蔽μLED阵列基板12发出的向某些特定方向传播的光线。As shown in Figure 2, the μLED array substrate 12 is arranged opposite to the upper substrate 13, the μLED array substrate 12 is provided with a plurality of μLEDs 123 arranged in an array and spaced from each other, and the light shielding part 15 is located between the upper substrate 13 and the μLED array substrate 12. Between and its two sides are in contact with the μLED array substrate 12 and the upper substrate 13 respectively, the light shielding portion 15 has a certain thickness, and the position of the light shielding portion 15 corresponding to each μLED 123 is formed with a capacity penetrating through the two sides of the light shielding portion 15. The hole 151 is arranged so that each μLED 123 is accommodated in the accommodating hole 151 , and the light-shielding portion 15 is opaque. The color conversion layer 16 is formed on the surface of the upper substrate 13 facing the μLED array substrate 12. The color conversion layer 16 includes a plurality of color conversion units, each color conversion unit is located in a housing hole 151, and the μLEDs located in the same housing hole 123 and the color conversion unit are set at intervals. The μLED array substrate 12 is used to emit light as the display light source of the display panel 10, and the color conversion layer 16 contains quantum dot materials, which can convert the color of the light emitted by the μLED array substrate 12 to obtain the required color for display, and light-shielding The part 15 can shield the light emitted by the μLED array substrate 12 and propagates in some specific directions.
遮光部15、上基板13以及μLED阵列基板12配合使容置孔151被密封形成为一密闭空间。The light-shielding portion 15 , the upper substrate 13 and the μLED array substrate 12 cooperate to seal the accommodating hole 151 to form a closed space.
μLED阵列基板12包括底板121以及设置于底板121朝向上基板13的表面的所述μLED 123,每一μLED123位于一容置孔151中。在本实施例中,μLED 123可以为含有氮化镓(GaN)的微型发光二极管,氮化镓微型发光二极管发出蓝色波段的光线。The μLED array substrate 12 includes a bottom plate 121 and the μLEDs 123 disposed on the surface of the bottom plate 121 facing the upper substrate 13 , and each μLED 123 is located in an accommodating hole 151 . In this embodiment, the μLED 123 may be a micro light emitting diode containing gallium nitride (GaN), and the GaN micro light emitting diode emits light in the blue band.
底板121的材料可以为无机物,如二氧化硅(SiO2);底板121的材料还可以为有机物,如,聚甲基丙烯酸甲酯(Polymeric Methyl Methacrylate,PMMA)、聚酰亚胺(Polyimide,PI)、聚萘二甲酸乙二醇酯(Polyethylene naphthalate two formic acidglycol ester,PEN)、聚碳酸酯(Polycarbonate,PC)或聚对苯二甲酸乙二醇酯(polyethylene glycol terephthalate,PET)。底板121可以为柔性材料或非柔性材料,在本实施例中,底板121为非柔性材料,底板121为PMMA,其具有较好的刚性,使μLED阵列基板12不易变形,以保证容置孔151的结构相对稳定且保持密封。在其他实施例中,底板121也可以为柔性材料(如PC、PMMA、PI或PEN),对应的,上基板13应为柔性材料,遮光部15也应具备较好的可形变能力,以使容置孔151在显示面板10发生弯曲、绕折等形变时不至于丧失其密封性。The material of the bottom plate 121 can be inorganic, such as silicon dioxide (SiO 2 ); the material of the bottom plate 121 can also be organic, such as, polymethyl methacrylate (Polymeric Methyl Methacrylate, PMMA), polyimide (Polyimide, PI), polyethylene naphthalate two formic acid glycol ester (PEN), polycarbonate (Polycarbonate, PC) or polyethylene terephthalate (polyethylene glycol terephthalate, PET). The bottom plate 121 can be a flexible material or a non-flexible material. In this embodiment, the bottom plate 121 is made of a non-flexible material, and the bottom plate 121 is PMMA, which has better rigidity, so that the μLED array substrate 12 is not easily deformed, so as to ensure that the accommodating hole 151 The structure is relatively stable and remains airtight. In other embodiments, the bottom plate 121 can also be a flexible material (such as PC, PMMA, PI or PEN), correspondingly, the upper substrate 13 should be a flexible material, and the light shielding part 15 should also have better deformability, so that The accommodating hole 151 will not lose its airtightness when the display panel 10 undergoes deformation such as bending or bending.
由μLED阵列基板12发出的光需穿透上基板13后被使用者观察到,因此,上基板13为透明材料,其具有较好的透光性;上基板13为色彩转换层16及遮光部15的承载体,上基板13可以为柔性材料或非柔性材料。在本实施例中,上基板13与底板121均为非柔性材料,均具有较好的刚性,使得显示面板10承受外力而产生扭曲、弯折等形变倾向时不易发生形变或形变程度较小,以保证容置孔151的结构相对稳定并使其保持密封;对应的,上基板13的材料可以为无机物,如二氧化硅(SiO2),上基板13的材料还可以为有机物,如聚碳酸酯(Polycarbonate,PC)、聚甲基丙烯酸甲酯(Polymeric Methyl Methacrylate,PMMA)或聚对苯二甲酸乙二醇酯(polyethylene glycol terephthalate,PET)。在其他实施例中,上基板13与底板121均为柔性材料,以使容置孔151在显示面板10发生弯曲、绕折等形变时不至于丧失其密封性;上基板13可以为光学膜片,上基板13的材料可以为有机物,如聚甲基丙烯酸甲酯(Polymeric Methyl Methacrylate,PMMA)、聚碳酸酯(Polycarbonate,PC)、聚酰亚胺(Polyimide,PI)或聚萘二甲酸乙二醇酯(Polyethylene naphthalate two formic acidglycol ester,PEN)。The light emitted by the μLED array substrate 12 needs to pass through the upper substrate 13 to be observed by the user. Therefore, the upper substrate 13 is a transparent material with better light transmission; the upper substrate 13 is the color conversion layer 16 and the light shielding part 15, the upper substrate 13 can be a flexible material or a non-flexible material. In this embodiment, both the upper substrate 13 and the bottom plate 121 are non-flexible materials, and both have good rigidity, so that when the display panel 10 is subject to external forces and produces deformation tendencies such as twisting and bending, it is difficult to deform or the degree of deformation is relatively small. To ensure that the structure of the accommodating hole 151 is relatively stable and keeps it sealed; correspondingly, the material of the upper substrate 13 can be an inorganic substance, such as silicon dioxide (SiO 2 ), and the material of the upper substrate 13 can also be an organic substance, such as a polymer Carbonate (Polycarbonate, PC), polymethyl methacrylate (Polymeric Methyl Methacrylate, PMMA) or polyethylene terephthalate (polyethylene glycol terephthalate, PET). In other embodiments, both the upper substrate 13 and the bottom plate 121 are made of flexible materials, so that the accommodating hole 151 will not lose its airtightness when the display panel 10 is bent, twisted or other deformations; the upper substrate 13 can be an optical film , the material of the upper substrate 13 can be organic, such as polymethyl methacrylate (Polymeric Methyl Methacrylate, PMMA), polycarbonate (Polycarbonate, PC), polyimide (Polyimide, PI) or polyethylene naphthalate Alcohol ester (Polyethylene naphthalate two formic acid glycol ester, PEN).
可以理解的,上基板13及底板121的材料可以根据实际需要选择,但在选择上基板13及底板121的材料时应充分考虑材料搭配对于容置孔151密封性的影响,应尽量保证容置孔151的密封性不被破坏,以避免水、氧进入容置孔151内对量子点材料造成破坏。It can be understood that the materials of the upper substrate 13 and the bottom plate 121 can be selected according to actual needs, but when selecting the materials of the upper substrate 13 and the bottom plate 121, the influence of material matching on the sealing performance of the accommodating hole 151 should be fully considered, and the accommodating hole 151 should be ensured as much as possible. The sealing of the hole 151 is not damaged, so as to prevent water and oxygen from entering the containing hole 151 and causing damage to the quantum dot material.
上基板13包括朝向μLED阵列基板12的第一表面131,遮光部15设置于第一表面131。遮光部15具有一定的厚度,该厚度至少使得设置于容置孔151内的色彩转换层16与μLED 123不接触。所述遮光部15可以为一图案化的黑矩阵层或者黑色光致抗蚀刻剂层,遮光部15可以通过印刷、化学蚀刻、激光蚀刻等工艺制作。The upper substrate 13 includes a first surface 131 facing the μLED array substrate 12 , and the light shielding portion 15 is disposed on the first surface 131 . The light shielding portion 15 has a certain thickness, which at least makes the color conversion layer 16 disposed in the accommodating hole 151 not in contact with the μLED 123 . The light-shielding portion 15 can be a patterned black matrix layer or a black photoresist layer, and the light-shielding portion 15 can be fabricated by printing, chemical etching, laser etching and other processes.
将相对设置的上基板13与μLED阵列基板12压合,使遮光部15远离上基板13的一侧与μLED阵列基板12通过粘胶11粘结,每个容置孔151定义一个子像素190,每个子像素内至少存在一个μ.LED 123,该μLED 123发出的光线的部分穿透上基板13,另一部分被遮光部15或μLED阵列基板12遮挡、吸收或反射。在本实施例中,每个容置孔151内仅设置有一个μLED123,在其他实施例中,每个容置孔151内可存在两个及以上的μLED 123,可根据显示面板10的亮度需求调节容置孔151内的μLED 123的数量。Press the opposite upper substrate 13 and the μLED array substrate 12, make the side of the light-shielding portion 15 far away from the upper substrate 13 and the μLED array substrate 12 bonded by adhesive 11, and each accommodating hole 151 defines a sub-pixel 190, There is at least one μ.LED 123 in each sub-pixel. Part of the light emitted by the μLED 123 passes through the upper substrate 13 , and the other part is blocked, absorbed or reflected by the light shielding portion 15 or the μLED array substrate 12 . In this embodiment, only one μLED 123 is provided in each accommodating hole 151. In other embodiments, there may be two or more μLEDs 123 in each accommodating hole 151, which can be adjusted according to the brightness requirement of the display panel 10 The number of μLEDs 123 in the accommodation hole 151 is adjusted.
子像素190包括三种颜色不同的红色子像素191、绿色子像素192以及蓝色子像素193,红色子像素191及绿色子像素192对应的容置孔151内还设置有色彩转换单元,色彩转换单元设置于第一表面131位于容置孔151内的部分上。色彩转换层16包括红色色彩转换单元161以及绿色色彩转换单元162,红色色彩转换单元161对应红色子像素191设置,绿色色彩转换单元162对应绿色子像素192设置。色彩转换层16可通过将量子点材料涂布、喷涂于第一表面131形成;红色色彩转换单元161内的量子点材料主要为直径7nm的量子点材料,μLED 123发出的光穿过上基板13时,被红色色彩转换单元161内的量子点材料转化为红色波段的光线;绿色色彩转换单元162内的量子点材料主要为直径3nm的量子点材料,μLED 123发出的光穿过上基板13时,被绿色色彩转换单元162内的量子点材料转化为绿色波段的光线;蓝色子像素193对应的容置孔151内未设置色彩转换层16,发蓝光的μLED 123发出的蓝光直接穿透上基板13。显示面板10包括多个像素17,一个像素17由多个子像素19构成,每个子像素19至少包括一个红色子像素191、一个绿色子像素192以及一个蓝色子像素193。氮化镓微型发光二极管发出蓝色的光,相较于传统的白光μLED 123,白光为多种不同频率的光混合后形成,量子点材料对于白光的利用率低于量子点材料对单色蓝光的利用率。The sub-pixel 190 includes a red sub-pixel 191, a green sub-pixel 192, and a blue sub-pixel 193 with three different colors. A color conversion unit is also arranged in the accommodating hole 151 corresponding to the red sub-pixel 191 and the green sub-pixel 192. The unit is disposed on a portion of the first surface 131 located in the receiving hole 151 . The color conversion layer 16 includes a red color conversion unit 161 and a green color conversion unit 162 , the red color conversion unit 161 is set corresponding to the red sub-pixel 191 , and the green color conversion unit 162 is set corresponding to the green sub-pixel 192 . The color conversion layer 16 can be formed by coating or spraying the quantum dot material on the first surface 131; the quantum dot material in the red color conversion unit 161 is mainly a quantum dot material with a diameter of 7nm, and the light emitted by the μLED 123 passes through the upper substrate 13 , the quantum dot material in the red color conversion unit 161 is converted into light in the red band; the quantum dot material in the green color conversion unit 162 is mainly a quantum dot material with a diameter of 3nm, and when the light emitted by the μLED 123 passes through the upper substrate 13 , is converted into light in the green band by the quantum dot material in the green color conversion unit 162; the color conversion layer 16 is not provided in the accommodation hole 151 corresponding to the blue sub-pixel 193, and the blue light emitted by the blue-emitting μLED 123 directly penetrates the upper Substrate 13. The display panel 10 includes a plurality of pixels 17 , and a pixel 17 is composed of a plurality of sub-pixels 19 , and each sub-pixel 19 includes at least one red sub-pixel 191 , one green sub-pixel 192 and one blue sub-pixel 193 . Gallium nitride micro-light emitting diodes emit blue light. Compared with the traditional white light μLED 123, white light is formed by mixing light of different frequencies. The utilization rate of quantum dot materials for white light is lower than that of quantum dot materials for monochromatic blue light. utilization rate.
该显示面板10还包括密封胶14,涂布于显示面板10外侧壁,其覆盖遮光部15与μLED阵列基板12和上基板13之间的连接缝隙,以提高显示面板10的密封性。The display panel 10 also includes a sealant 14 coated on the outer wall of the display panel 10 to cover the connection gap between the light shielding portion 15 and the μLED array substrate 12 and the upper substrate 13 to improve the sealing performance of the display panel 10 .
该显示面板10还包括有源矩阵基板18,该有源矩阵基板18上包括多个呈阵列排布的薄膜晶体管181(thin film transistor,TFT),该多个TFT 181用于控制所述μLED 123的开启与关闭,每个μLED 123至少对应设置有一个TFT 181。The display panel 10 also includes an active matrix substrate 18, and the active matrix substrate 18 includes a plurality of thin film transistors 181 (thin film transistor, TFT) arranged in an array, and the plurality of TFTs 181 are used to control the μLED 123 Each μLED 123 is provided with at least one TFT 181 correspondingly.
μLED 123以及色彩转换层16之间不接触,μLED 123在发光的同时也会发热,而色彩转换层16中的量子点材料受高温影响会发生变质,并直接造成显示面板10显示效果的下降。容置孔151内的填充物的导热系数比底板121的导热系数小。在本实施例中,容置孔151中的填充物为空气,空气的平均导热系数为0.026W/mK,本实施例的底板121材质为聚甲基丙烯酸甲酯(Polymeric Methyl Methacrylate,PMMA),PMMA的导热系数为0.2W/mK,PMMA的导热系数远大于空气的导热系数。μLED 123工作时发出的热量将优先通过与其接触的材料中导热系数大的材料进行传递,μLED 123同时与底板121及容置孔151中填充的空气接触,由于底板121的导热系数远大于空气的导热系数,而色彩转换层16与μLED 123被空气隔绝而不直接接触,因此,μLED 123产生的热量优先通过底板121导出,仅有少量的热量通过空气传导至色彩转换层16,使色彩转换层16中的量子点材料避免因高温而被破坏。在其他实施例中,容置孔151内也可填充导热系数小于底板121材料导热系数的光学胶。There is no contact between the μLED 123 and the color conversion layer 16 , the μLED 123 will generate heat while emitting light, and the quantum dot material in the color conversion layer 16 will deteriorate due to high temperature, which will directly cause the display effect of the display panel 10 to decline. The thermal conductivity of the filling in the receiving hole 151 is smaller than that of the bottom plate 121 . In this embodiment, the filler in the accommodation hole 151 is air, and the average thermal conductivity of air is 0.026W/mK. The material of the bottom plate 121 in this embodiment is polymethyl methacrylate (Polymeric Methyl Methacrylate, PMMA). The thermal conductivity of PMMA is 0.2W/mK, and the thermal conductivity of PMMA is much greater than that of air. The heat emitted by μLED 123 will be preferentially transmitted through the material with high thermal conductivity among the materials in contact with it. μLED 123 is in contact with the base plate 121 and the air filled in the accommodating hole 151 at the same time, because the thermal conductivity of the base plate 121 is much greater than that of air. thermal conductivity, and the color conversion layer 16 and the μLED 123 are isolated by air without direct contact, therefore, the heat generated by the μLED 123 is preferentially exported through the bottom plate 121, and only a small amount of heat is conducted to the color conversion layer 16 through the air, making the color conversion layer The quantum dot material in 16 avoids being destroyed by high temperature. In other embodiments, the accommodating hole 151 may also be filled with optical glue whose thermal conductivity is lower than that of the material of the bottom plate 121 .
提供本发明第一实施例的显示面板的制作方法。A method for manufacturing a display panel according to a first embodiment of the present invention is provided.
步骤S11:提供一透光的上基板13,在所述上基板13表面形成遮光部15,该遮光部15由不透光材料形成,该遮光部15形成有多个贯穿该遮光部15的容置孔151。Step S11: Provide a light-transmitting upper substrate 13, and form a light-shielding portion 15 on the surface of the upper substrate 13. The light-shielding portion 15 is formed of an opaque material. Hole 151 is set.
具体的,所述基板具备一第一表面131,在第一表面131上形成深色不透光的光致抗蚀刻材料,所述遮光部15通过使用激光蚀刻或化学蚀刻的工艺蚀刻该光致抗蚀刻材料得到。在本实施例中,遮光部15存在多个呈矩阵排布且大小几乎一致的容置孔151,所述容置孔151贯穿遮光部15,容置孔151对应区域的光致抗蚀刻材料被去除以露出所述上基板13的第一表面131。Specifically, the substrate has a first surface 131, and a dark opaque photoresist material is formed on the first surface 131, and the light shielding part 15 etches the photoresist by using laser etching or chemical etching. Etch-resistant materials are obtained. In this embodiment, the light-shielding portion 15 has a plurality of accommodating holes 151 arranged in a matrix and having almost the same size. removed to expose the first surface 131 of the upper substrate 13 .
步骤S12:在该上基板13形成有该遮光部15的表面形成色彩转换层16,色彩转换层16包括多个色彩转换单元,每个色彩转换单元位于一容置孔151内。Step S12 : forming a color conversion layer 16 on the surface of the upper substrate 13 on which the light shielding portion 15 is formed. The color conversion layer 16 includes a plurality of color conversion units, and each color conversion unit is located in an accommodating hole 151 .
具体地,可通过涂布、喷撒等方式将所述色彩转换层16制备于第一表面131未被遮光部15覆盖区域的部分区域中。每一个容置孔151对应一个子像素19,所述子像素19包括至少三种不同的子像素,本实施例中,子像素19包括红色子像素191、绿色子像素192以及蓝色子像素193,色彩转换层16的色彩转换单元包括红色色彩转换单元161以及绿色色彩转换单元162,其中,红色色彩转换单元161对应红色子像素191设置,绿色色彩转换单元162对应绿色子像素192设置,对应蓝色子像素的区域未设置色彩转换层16。Specifically, the color conversion layer 16 may be prepared in a partial area of the first surface 131 not covered by the light-shielding portion 15 by coating, spraying, and the like. Each accommodating hole 151 corresponds to a sub-pixel 19, and the sub-pixel 19 includes at least three different sub-pixels. In this embodiment, the sub-pixel 19 includes a red sub-pixel 191, a green sub-pixel 192, and a blue sub-pixel 193. , the color conversion unit of the color conversion layer 16 includes a red color conversion unit 161 and a green color conversion unit 162, wherein the red color conversion unit 161 is set corresponding to the red sub-pixel 191, the green color conversion unit 162 is set corresponding to the green sub-pixel 192, and corresponding to the blue color conversion unit 162. The area of the color sub-pixel is not provided with the color conversion layer 16 .
步骤S13:提供一μLED阵列基板12,该μLED阵列基板12设置有多个呈阵列排布且彼此间隔设置的μLED 123;将所述上基板13与所述μLED阵列基板12对接,使所述遮光部15位于μLED阵列基板12与上基板13之间且其两侧分别与μLED阵列基板12及上基板13接触,使每一μLED 123容置于一容置孔151中。Step S13: providing a μLED array substrate 12, the μLED array substrate 12 is provided with a plurality of μLEDs 123 arranged in an array and spaced from each other; connecting the upper substrate 13 to the μLED array substrate 12, so that the light-shielding The portion 15 is located between the μLED array substrate 12 and the upper substrate 13 and its two sides are respectively in contact with the μLED array substrate 12 and the upper substrate 13 , so that each μLED 123 is accommodated in an accommodating hole 151 .
具体地,还提供与该μLED阵列基板122堆叠设置的包含有多个TFT 181的薄膜晶体管阵列基板18,所述TFT 181呈矩阵排布,每一个μLED 123至少对应设置有一个TFT 181。本实施例中,该显示面板10还可以包括密封胶14,密封胶14涂布于显示面板10外侧壁,其覆盖遮光部15与μLED阵列基板12和上基板13之间的连接缝隙。Specifically, a thin film transistor array substrate 18 including a plurality of TFTs 181 stacked with the μLED array substrate 122 is also provided, the TFTs 181 are arranged in a matrix, and each μLED 123 is provided with at least one TFT 181 . In this embodiment, the display panel 10 may further include a sealant 14 coated on the outer wall of the display panel 10 to cover the connection gap between the light shielding portion 15 and the μLED array substrate 12 and the upper substrate 13 .
第二实施例second embodiment
请参考图3,图3所示为本发明第二实施例的显示面板的结构示意图,第二实施例的显示面板的平面示意图与第一实施例的显示面板的平面示意图相同,可参考图1。Please refer to FIG. 3 . FIG. 3 shows a schematic structural view of a display panel according to a second embodiment of the present invention. The schematic plan view of the display panel of the second embodiment is the same as that of the display panel of the first embodiment. Refer to FIG. 1 .
本实施例的显示面板20包括μLED阵列基板22、上基板23、遮光部25以及色彩转换层26。The display panel 20 of this embodiment includes a μLED array substrate 22 , an upper substrate 23 , a light shielding portion 25 and a color conversion layer 26 .
如图3所示,μLED阵列基板22与上基板23相对设置,μLED阵列基板22上设置有多个呈阵列排布且彼此间隔设置的μLED 223,遮光部25位于上基板23与μLED阵列基板22之间且其两侧分别与μLED阵列基板22及上基板23接触,遮光部25具有一定的厚度,且遮光部25对应每一μLED 223的位置形成有贯穿遮光部25的所述两侧的容置孔251,使每一μLED 223容置于一容置孔251中,所述遮光部25不透光。色彩转换层26形成于上基板23朝向μLED阵列基板22的表面,色彩转换层26包括多个色彩转换单元,每个色彩转换单元位于一容置孔251内,且位于同一容置孔中的μLED 223与色彩转换单元间隔设置。μLED阵列基板22用于发出光线以作为显示面板20的显示光源,色彩转换层26内含有量子点材料,其可对μLED阵列基板22发出的光线的颜色进行转换以获得显示所需的色彩,遮光部25可遮蔽μLED阵列基板22发出的向某些特定方向传播的光线。As shown in Figure 3, the μLED array substrate 22 is arranged opposite to the upper substrate 23, and the μLED array substrate 22 is provided with a plurality of μLEDs 223 arranged in an array and arranged at intervals from each other, and the light shielding part 25 is located between the upper substrate 23 and the μLED array substrate 22. Between and its two sides are in contact with the μLED array substrate 22 and the upper substrate 23 respectively, the light shielding portion 25 has a certain thickness, and the position of the light shielding portion 25 corresponding to each μLED 223 is formed with a space through the two sides of the light shielding portion 25. The hole 251 is arranged so that each μLED 223 is accommodated in the accommodating hole 251 , and the light-shielding portion 25 is opaque. The color conversion layer 26 is formed on the surface of the upper substrate 23 facing the μLED array substrate 22. The color conversion layer 26 includes a plurality of color conversion units, each color conversion unit is located in a receiving hole 251, and the μLEDs located in the same receiving hole 223 and the color conversion unit are set at intervals. The μLED array substrate 22 is used to emit light as the display light source of the display panel 20, and the color conversion layer 26 contains quantum dot materials, which can convert the color of the light emitted by the μLED array substrate 22 to obtain the required color for display, shading The part 25 can shield the light emitted by the μLED array substrate 22 and propagated in some specific directions.
遮光部25、上基板23以及μLED阵列基板22配合使容置孔251被密封形成为一密闭空间。The light shielding portion 25 , the upper substrate 23 and the μLED array substrate 22 cooperate to seal the accommodating hole 251 to form a closed space.
μLED阵列基板22包括底板221以及设置于底板221朝向上基板23的表面的所述μLED 223,每一μLED 223位于一容置孔251中。在本实施例中,μLED 223可以为含有氮化镓铝(AlGaN)的微型发光二极管,氮化镓铝微型发光二极管发出紫外光。The μLED array substrate 22 includes a bottom plate 221 and the μLEDs 223 disposed on the surface of the bottom plate 221 facing the upper substrate 23 , and each μLED 223 is located in an accommodating hole 251 . In this embodiment, the μLED 223 may be a micro light emitting diode containing aluminum gallium nitride (AlGaN), and the micro light emitting diode of aluminum gallium nitride emits ultraviolet light.
底板221的材料可以为无机物,如二氧化硅(SiO2);底板221的材料还可以为有机物,如,聚甲基丙烯酸甲酯(Polymeric Methyl Methacrylate,PMMA)、聚酰亚胺(Polyimide,PI)、聚萘二甲酸乙二醇酯(Polyethylene naphthalate two formic acidglycol ester,PEN)、聚碳酸酯(Polycarbonate,PC)或聚对苯二甲酸乙二醇酯(polyethylene glycol terephthalate,PET)。底板221可以为柔性材料或非柔性材料,在本实施例中,底板221为非柔性材料,底板221为PMMA,其具有较好的刚性,使μLED阵列基板22不易变形,以保证容置孔251的结构相对稳定且保持密封。在其他实施例中,底板221也可以为柔性材料(如PC、PMMA、PI或PEN),对应的,上基板23应为柔性材料,遮光部25也应具备较好的可形变能力,以使容置孔251在显示面板20发生弯曲、绕折等形变时不至于丧失其密封性。The material of the bottom plate 221 can be inorganic, such as silicon dioxide (SiO 2 ); the material of the bottom plate 221 can also be organic, such as, polymethyl methacrylate (Polymeric Methyl Methacrylate, PMMA), polyimide (Polyimide, PI), polyethylene naphthalate two formic acid glycol ester (PEN), polycarbonate (Polycarbonate, PC) or polyethylene terephthalate (polyethylene glycol terephthalate, PET). The bottom plate 221 can be a flexible material or a non-flexible material. In this embodiment, the bottom plate 221 is a non-flexible material, and the bottom plate 221 is PMMA, which has better rigidity, so that the μLED array substrate 22 is not easily deformed, so as to ensure that the accommodating hole 251 The structure is relatively stable and remains airtight. In other embodiments, the bottom plate 221 can also be a flexible material (such as PC, PMMA, PI or PEN), correspondingly, the upper substrate 23 should be a flexible material, and the light shielding part 25 should also have better deformability, so that The accommodating hole 251 will not lose its airtightness when the display panel 20 is deformed such as bending or bending.
由μLED阵列基板22发出的光需穿透上基板23后被使用者观察到,因此,上基板23为透明材料,其具有较好的透光性;上基板23为色彩转换层26及遮光部25的承载体,上基板23可以为柔性材料或非柔性材料。在本实施例中,上基板23与底板221均为非柔性材料,均具有较好的刚性,使得显示面板20承受外力而产生扭曲、弯折等形变倾向时不易发生形变或形变程度较小,以保证容置孔251的结构相对稳定并使其保持密封;对应的,上基板23的材料可以为无机物,如二氧化硅(SiO2),上基板23的材料还可以为有机物,如聚碳酸酯(Polycarbonate,PC)、聚甲基丙烯酸甲酯(Polymeric Methyl Methacrylate,PMMA)或聚对苯二甲酸乙二醇酯(polyethylene glycol terephthalate,PET)。在其他实施例中,上基板23与底板221均为柔性材料,以使容置孔251在显示面板20发生弯曲、绕折等形变时不至于丧失其密封性;上基板23可以为光学膜片,上基板23的材料可以为有机物,如聚甲基丙烯酸甲酯(Polymeric Methyl Methacrylate,PMMA)、聚碳酸酯(Polycarbonate,PC)、聚酰亚胺(Polyimide,PI)或聚萘二甲酸乙二醇酯(Polyethylene naphthalate two formic acidglycol ester,PEN)。The light emitted by the μLED array substrate 22 needs to pass through the upper substrate 23 to be observed by the user. Therefore, the upper substrate 23 is a transparent material with better light transmission; the upper substrate 23 is a color conversion layer 26 and a light-shielding part 25, the upper substrate 23 can be a flexible material or a non-flexible material. In this embodiment, both the upper substrate 23 and the bottom plate 221 are non-flexible materials, and both have relatively good rigidity, so that the display panel 20 is less likely to be deformed or deformed to a lesser extent when it is subjected to external forces and produces deformation tendencies such as twisting and bending. To ensure that the structure of the accommodating hole 251 is relatively stable and keeps it sealed; correspondingly, the material of the upper substrate 23 can be an inorganic substance, such as silicon dioxide (SiO 2 ), and the material of the upper substrate 23 can also be an organic substance, such as a polymer Carbonate (Polycarbonate, PC), polymethyl methacrylate (Polymeric Methyl Methacrylate, PMMA) or polyethylene terephthalate (polyethylene glycol terephthalate, PET). In other embodiments, both the upper substrate 23 and the bottom plate 221 are made of flexible materials, so that the accommodating hole 251 will not lose its airtightness when the display panel 20 is bent, twisted or other deformations; the upper substrate 23 can be an optical film , the material of the upper substrate 23 can be organic, such as polymethyl methacrylate (Polymeric Methyl Methacrylate, PMMA), polycarbonate (Polycarbonate, PC), polyimide (Polyimide, PI) or polyethylene naphthalate Alcohol ester (Polyethylene naphthalate two formic acid glycol ester, PEN).
可以理解的,上基板23及底板221的材料可以根据实际需要选择,但在选择上基板23及底板221的材料时应充分考虑材料搭配对于容置孔251密封性的影响,应尽量保证容置孔251的密封性不被破坏,以避免水、氧进入容置孔251内对量子点材料造成破坏。It can be understood that the materials of the upper substrate 23 and the bottom plate 221 can be selected according to actual needs, but when selecting the materials of the upper substrate 23 and the bottom plate 221, the influence of material matching on the sealing of the accommodation hole 251 should be fully considered, and the accommodation should be ensured as much as possible. The sealing of the hole 251 is not damaged, so as to prevent water and oxygen from entering the containing hole 251 and causing damage to the quantum dot material.
上基板23包括朝向μLED阵列基板22的第一表面231,遮光部25设置于第一表面231。遮光部25具有一定的厚度,该厚度至少使得设置于容置孔251内的色彩转换层26与μLED 223不接触。所述遮光部25可以为一图案化的黑矩阵层或者黑色光致抗蚀刻剂层,遮光部25可以通过印刷、化学蚀刻、激光蚀刻等工艺制作。The upper substrate 23 includes a first surface 231 facing the μLED array substrate 22 , and the light shielding portion 25 is disposed on the first surface 231 . The light shielding portion 25 has a certain thickness, which at least makes the color conversion layer 26 disposed in the accommodating hole 251 not in contact with the μLED 223 . The light-shielding portion 25 can be a patterned black matrix layer or a black photoresist layer, and the light-shielding portion 25 can be fabricated by printing, chemical etching, laser etching and other processes.
将相对设置的上基板23与μLED阵列基板22压合,使遮光部25远离上基板23的一侧与μLED阵列基板22通过粘胶21粘结,每个容置孔251定义一个子像素290,每个子像素内至少存在一个μLED 223,该μLED 223发出的光线的部分穿透上基板23,另一部分被遮光部25或μLED阵列基板22遮挡、吸收或反射。在本实施例中,每个容置孔251内仅设置有一个μLED223,在其他实施例中,每个容置孔251内可存在两个及以上的μLED 223,可根据显示面板20的亮度需求调节容置孔251内的μLED 223的数量。Press the opposite upper substrate 23 and the μLED array substrate 22, so that the side of the light shielding portion 25 away from the upper substrate 23 is bonded to the μLED array substrate 22 through the adhesive 21, and each accommodating hole 251 defines a sub-pixel 290, There is at least one μLED 223 in each sub-pixel, part of the light emitted by the μLED 223 penetrates the upper substrate 23 , and the other part is blocked, absorbed or reflected by the light shielding portion 25 or the μLED array substrate 22 . In this embodiment, only one μLED 223 is provided in each accommodation hole 251. In other embodiments, there may be two or more μLEDs 223 in each accommodation hole 251, which can be adjusted according to the brightness requirement of the display panel 20. The number of μLEDs 223 in the accommodation hole 251 is adjusted.
子像素290包括三种颜色不同的红色子像素291、绿色子像素292以及蓝色子像素293,红色子像素291、绿色子像素292及蓝色子像素293对应的容置孔251内还设置有色彩转换单元,色彩转换单元设置于第一表面231位于容置孔251内的部分上。色彩转换层26包括红色色彩转换单元261、绿色色彩转换单元262以及蓝色色彩转换单元263,红色色彩转换单元261对应红色子像素291设置,绿色色彩转换单元262对应绿色子像素292设置,蓝色色彩转换单元263对应蓝色子像素293设置。色彩转换层26可通过将量子点材料涂布、喷涂于第一表面231形成;红色色彩转换单元261内的量子点材料主要为直径7nm的量子点材料,μLED223发出的光穿过上基板23时,被红色色彩转换单元261内的量子点材料转化为红色波段的光线;绿色色彩转换单元262内的量子点材料主要为直径3nm的量子点材料,μLED 223发出的光穿过上基板23时,被绿色色彩转换单元262内的量子点材料转化为绿色波段的光线;蓝色色彩转换单元263内的量子点材料主要为直径2nm的量子点材料,μLED 223发出的光穿过上基板23时,被蓝色色彩转换单元263内的量子点材料转化为蓝色波段的光线。显示面板20包括多个像素27,一个像素27由多个子像素29构成,每个子像素29至少包括一个红色子像素291、一个绿色子像素292以及一个蓝色子像素293。氮化镓铝微型发光二极管发出紫外光,相较于传统的白光μLED,白光为多种不同频率的光混合后形成,量子点材料对于白光的利用率低于量子点材料对单色紫外光的利用率。The sub-pixel 290 includes a red sub-pixel 291, a green sub-pixel 292 and a blue sub-pixel 293 with three different colors. The color converting unit is disposed on the part of the first surface 231 located in the accommodating hole 251 . The color conversion layer 26 includes a red color conversion unit 261, a green color conversion unit 262, and a blue color conversion unit 263. The red color conversion unit 261 is set corresponding to the red sub-pixel 291, the green color conversion unit 262 is set corresponding to the green sub-pixel 292, and the blue color conversion unit 262 is set corresponding to the green sub-pixel 292. The color conversion unit 263 is provided corresponding to the blue sub-pixel 293 . The color conversion layer 26 can be formed by coating or spraying the quantum dot material on the first surface 231; the quantum dot material in the red color conversion unit 261 is mainly a quantum dot material with a diameter of 7nm, and when the light emitted by μLED223 passes through the upper substrate 23 , is converted into light in the red band by the quantum dot material in the red color conversion unit 261; the quantum dot material in the green color conversion unit 262 is mainly a quantum dot material with a diameter of 3nm, and when the light emitted by the μLED 223 passes through the upper substrate 23, The light in the green band is converted by the quantum dot material in the green color conversion unit 262; the quantum dot material in the blue color conversion unit 263 is mainly a quantum dot material with a diameter of 2nm. When the light emitted by the μLED 223 passes through the upper substrate 23, The quantum dot material in the blue color conversion unit 263 is converted into blue wavelength light. The display panel 20 includes a plurality of pixels 27 , and a pixel 27 is composed of a plurality of sub-pixels 29 , and each sub-pixel 29 includes at least one red sub-pixel 291 , one green sub-pixel 292 and one blue sub-pixel 293 . Gallium aluminum nitride micro-light emitting diodes emit ultraviolet light. Compared with traditional white light μLEDs, white light is formed by mixing light of various frequencies. The utilization rate of quantum dot materials for white light is lower than that of quantum dot materials for monochromatic ultraviolet light. utilization rate.
该显示面板20还包括密封胶24,涂布于显示面板20外侧壁,其覆盖遮光部25与μLED阵列基板22和上基板23之间的连接缝隙,以提高显示面板20的密封性。The display panel 20 also includes a sealant 24 coated on the outer wall of the display panel 20 to cover the connection gap between the light shielding portion 25 and the μLED array substrate 22 and the upper substrate 23 to improve the sealing of the display panel 20 .
该显示面板20还包括有源矩阵基板28,该有源矩阵基板上包括多个呈阵列排布的薄膜晶体管281(thin film transistor,TFT),该多个TFT 281用于控制所述μLED 223的开启与关闭,每个μLED 223至少对应设置有一个TFT 281。The display panel 20 also includes an active matrix substrate 28, and the active matrix substrate includes a plurality of thin film transistors 281 (thin film transistor, TFT) arranged in an array, and the plurality of TFTs 281 are used to control the μLED 223 For turning on and off, each μLED 223 is provided with at least one TFT 281 correspondingly.
μLED 223以及色彩转换层26之间不接触,μLED 223在发光的同时也会发热,而色彩转换层26中的量子点材料受高温影响会发生变质,并直接造成显示面板20显示效果的下降。容置孔251内的填充物的导热系数比底板221的导热系数小。在本实施例中,容置孔251中的填充物为空气,空气的平均导热系数为0.026W/mK,本实施例的底板221材质为聚甲基丙烯酸甲酯(Polymeric Methyl Methacrylate,PMMA),PMMA的导热系数为0.2W/mK,PMMA的导热系数远大于空气的导热系数。μLED 223工作时发出的热量将优先通过与其接触的材料中导热系数大的材料进行传递,μLED 223同时与底板221及容置孔251中填充的空气接触,由于底板221的导热系数远大于空气的导热系数,而色彩转换层26与μLED 223被空气隔绝而不直接接触,因此,μLED 223产生的热量优先通过底板221导出,仅有少量的热量通过空气传导至色彩转换层26,使色彩转换层26中的量子点材料避免因高温而被破坏。在其他实施例中,容置孔251内也可填充导热系数小于底板221材料导热系数的光学胶。There is no contact between the μLED 223 and the color conversion layer 26 , the μLED 223 will generate heat while emitting light, and the quantum dot material in the color conversion layer 26 will deteriorate due to high temperature, which will directly cause the display effect of the display panel 20 to decline. The thermal conductivity of the filling in the receiving hole 251 is smaller than that of the bottom plate 221 . In this embodiment, the filler in the accommodation hole 251 is air, and the average thermal conductivity of the air is 0.026W/mK. The material of the bottom plate 221 in this embodiment is polymethyl methacrylate (Polymeric Methyl Methacrylate, PMMA). The thermal conductivity of PMMA is 0.2W/mK, and the thermal conductivity of PMMA is much greater than that of air. The heat emitted by μLED 223 will be preferentially transmitted through the material with high thermal conductivity among the materials in contact with it, and μLED 223 is in contact with the base plate 221 and the air filled in the accommodating hole 251 at the same time, because the thermal conductivity of the base plate 221 is much greater than that of air. thermal conductivity, and the color conversion layer 26 and the μLED 223 are isolated by air without direct contact, therefore, the heat generated by the μLED 223 is preferentially exported through the bottom plate 221, and only a small amount of heat is conducted to the color conversion layer 26 through the air, making the color conversion layer The quantum dot material in 26 avoids being destroyed by high temperature. In other embodiments, the accommodating hole 251 may also be filled with optical glue whose thermal conductivity is lower than that of the material of the bottom plate 221 .
提供本发明第二实施例的显示面板的制作方法。A method for manufacturing a display panel according to a second embodiment of the present invention is provided.
步骤S21:提供一透光的上基板23,在所述上基板23表面形成遮光部25,该遮光部25由不透光材料形成,该遮光部25形成有多个贯穿该遮光部25的容置孔251。Step S21: Provide a light-transmitting upper substrate 23, and form a light-shielding portion 25 on the surface of the upper substrate 23. The light-shielding portion 25 is formed of an opaque material. Hole 251 is set.
具体的,所述基板具备一第一表面231,在第一表面231上形成深色的光致抗蚀刻材料,所述遮光部25通过使用激光蚀刻或化学蚀刻的工艺蚀刻该光致抗蚀刻材料得到。在本实施例中,所述遮光部25具备网状图案,遮光部25存在多个呈矩阵排布且大小几乎一致的容置孔251,容置孔251对应区域的光致抗蚀刻材料被去除以露出所述上基板23的第一表面231。Specifically, the substrate has a first surface 231, and a dark photoresist material is formed on the first surface 231, and the light shielding part 25 etches the photoresist material by using laser etching or chemical etching. get. In this embodiment, the light-shielding portion 25 has a mesh pattern, and the light-shielding portion 25 has a plurality of accommodating holes 251 arranged in a matrix with almost the same size, and the photoresist material in the corresponding area of the accommodating holes 251 is removed. to expose the first surface 231 of the upper substrate 23 .
步骤S22:在该上基板23形成有该遮光部25的表面形成色彩转换层26,色彩转换层26包括多个色彩转换单元,每个色彩转换单元位于一容置孔251内。Step S22 : forming a color conversion layer 26 on the surface of the upper substrate 23 on which the light-shielding portion 25 is formed. The color conversion layer 26 includes a plurality of color conversion units, and each color conversion unit is located in an accommodating hole 251 .
具体地,可通过涂布、喷撒等方式将色彩转换层26制备于第一表面231未被遮光部25覆盖区域的部分区域中。每一个容置孔251对应一个子像素29,所述子像素29包括至少三种不同的子像素,本实施例中,子像素29包含红色子像素291、绿色子像素292及蓝色子像素293;色彩转换层26的色彩转换单元包括红色色彩转换单元261以及绿色色彩转换单元262,红色色彩转换单元261对应红色子像素291设置,绿色色彩转换单元262对应绿色子像素292设置,蓝色色彩转换单元263对应蓝色子像素293设置。Specifically, the color conversion layer 26 may be prepared in a partial area of the first surface 231 not covered by the light-shielding portion 25 by coating, spraying, and the like. Each accommodating hole 251 corresponds to a sub-pixel 29, and the sub-pixel 29 includes at least three different sub-pixels. In this embodiment, the sub-pixel 29 includes a red sub-pixel 291, a green sub-pixel 292, and a blue sub-pixel 293. The color conversion unit of the color conversion layer 26 includes a red color conversion unit 261 and a green color conversion unit 262, the red color conversion unit 261 is set corresponding to the red sub-pixel 291, the green color conversion unit 262 is set corresponding to the green sub-pixel 292, and the blue color conversion The unit 263 is set corresponding to the blue sub-pixel 293 .
步骤S23:提供一μLED阵列基板22,该μLED阵列基板22设置有多个呈阵列排布且彼此间隔设置的μLED 223;将所述上基板23与所述μLED阵列基板22对接,使所述遮光部25位于μLED阵列基板22与上基板23之间且其两侧分别与μLED阵列基板22及上基板23接触,使每一μLED 223容置于一容置孔251中。Step S23: providing a μLED array substrate 22, the μLED array substrate 22 is provided with a plurality of μLEDs 223 arranged in an array and spaced from each other; connecting the upper substrate 23 with the μLED array substrate 22, so that the light-shielding The portion 25 is located between the μLED array substrate 22 and the upper substrate 23 and its two sides are respectively in contact with the μLED array substrate 22 and the upper substrate 23 , so that each μLED 223 is accommodated in an accommodating hole 251 .
具体地,还提供与该μLED阵列基板222堆叠设置的包含有多个TFT 281的薄膜晶体管阵列基板28,所述TFT 281呈矩阵排布,每一个μLED 223至少对应设置有一个TFT 281。本实施例中,该显示面板20还可以包括密封胶24,密封胶24涂布于显示面板20外侧壁,其覆盖遮光部25与μLED阵列基板22和上基板23之间的连接缝隙。Specifically, a thin film transistor array substrate 28 including a plurality of TFTs 281 stacked with the μLED array substrate 222 is also provided, the TFTs 281 are arranged in a matrix, and each μLED 223 is provided with at least one TFT 281 . In this embodiment, the display panel 20 may further include a sealant 24 coated on the outer wall of the display panel 20 to cover the connection gap between the light shielding portion 25 and the μLED array substrate 22 and the upper substrate 23 .
请参阅图4,为应用本发明显示面板的电子装置1的一具体实施方式的示意图。在对本实施例的电子装置1进行描述时,相同的元件使用与之前实施方式相同的标号。在本实施例中,电子装置1为移动电话,包括本体2及设置于本体2内的显示面板,该显示面板为本发明提供的显示面板,比如可为上述实施例一中描述的显示面板10,或为实施例二中描述的显示面板20。Please refer to FIG. 4 , which is a schematic diagram of a specific embodiment of the electronic device 1 using the display panel of the present invention. When describing the electronic device 1 of this embodiment, the same elements are given the same reference numerals as in the previous embodiment. In this embodiment, the electronic device 1 is a mobile phone, including a main body 2 and a display panel disposed in the main body 2. The display panel is the display panel provided by the present invention, such as the display panel 10 described in the first embodiment above. , or the display panel 20 described in the second embodiment.
图4中仅以电子装置1为手机为例,在其它实施例中,该电子装置1也可为个人计算机、智能家电、工业控制器等。当该电子装置1为手机时,该显示面板20可以对应手机的正面设置。In FIG. 4 , the electronic device 1 is only taken as an example of a mobile phone. In other embodiments, the electronic device 1 can also be a personal computer, a smart home appliance, an industrial controller, and the like. When the electronic device 1 is a mobile phone, the display panel 20 can be disposed corresponding to the front of the mobile phone.
上文中,参照附图描述了本发明的具体实施方式。但是,本领域中的普通技术人员能够理解,在不偏离本发明的精神和范围的情况下,还可以对本发明的具体实施方式作各种变更和替换。这些变更和替换都落在本发明权利要求书所限定的范围内。Hereinbefore, specific embodiments of the present invention have been described with reference to the accompanying drawings. However, those skilled in the art can understand that without departing from the spirit and scope of the present invention, various changes and substitutions can be made to the specific embodiments of the present invention. These changes and substitutions all fall within the scope defined by the claims of the present invention.
Claims (18)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810433451.2A CN108573992A (en) | 2018-05-08 | 2018-05-08 | Display panel, manufacturing method and electronic device using the display panel |
TW107121606A TWI690074B (en) | 2018-05-08 | 2018-06-22 | Display panel, preparation method and electronic device using the display panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810433451.2A CN108573992A (en) | 2018-05-08 | 2018-05-08 | Display panel, manufacturing method and electronic device using the display panel |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108573992A true CN108573992A (en) | 2018-09-25 |
Family
ID=63571980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810433451.2A Pending CN108573992A (en) | 2018-05-08 | 2018-05-08 | Display panel, manufacturing method and electronic device using the display panel |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN108573992A (en) |
TW (1) | TWI690074B (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109671365A (en) * | 2019-01-30 | 2019-04-23 | 京东方科技集团股份有限公司 | Micro-LED display base plate and preparation method thereof, display device |
CN109755268A (en) * | 2018-12-29 | 2019-05-14 | 武汉华星光电技术有限公司 | A color conversion layer and its manufacturing method, and a display panel |
CN111261658A (en) * | 2020-02-10 | 2020-06-09 | Tcl华星光电技术有限公司 | Micro light-emitting diode display panel and transfer method of micro light-emitting diode |
CN111580301A (en) * | 2020-06-10 | 2020-08-25 | 京东方科技集团股份有限公司 | A color filter substrate, its manufacturing method and display device |
TWI706397B (en) * | 2018-10-12 | 2020-10-01 | 友達光電股份有限公司 | Display device and method for forming the same |
WO2021000517A1 (en) * | 2019-06-30 | 2021-01-07 | 成都辰显光电有限公司 | Color conversion component and display device |
CN112216774A (en) * | 2019-07-11 | 2021-01-12 | 成都辰显光电有限公司 | Color conversion assembly, display panel and manufacturing method |
WO2021004097A1 (en) * | 2019-07-11 | 2021-01-14 | 成都辰显光电有限公司 | Color conversion assembly, display panel and manufacturing method for color conversion assembly |
CN112786577A (en) * | 2020-08-24 | 2021-05-11 | 錼创显示科技股份有限公司 | Display device and method for manufacturing the same |
US11056661B2 (en) | 2018-12-29 | 2021-07-06 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Color conversion layer, manufacturing method thereof, and display panel |
CN113327521A (en) * | 2020-02-28 | 2021-08-31 | 成都辰显光电有限公司 | Display panel, preparation method of display panel and color conversion structure |
WO2022000219A1 (en) * | 2020-06-29 | 2022-01-06 | 重庆康佳光电技术研究院有限公司 | Light conversion layer and preparation method, and led display panel and preparation method |
CN113934316A (en) * | 2020-07-13 | 2022-01-14 | 重庆康佳光电技术研究院有限公司 | Display panel and method of making the same |
CN114023785A (en) * | 2021-11-02 | 2022-02-08 | 业成科技(成都)有限公司 | display device |
CN115083278A (en) * | 2022-06-24 | 2022-09-20 | 维沃移动通信有限公司 | Display module and electronic device |
US20230068483A1 (en) * | 2021-08-31 | 2023-03-02 | PlayNitride Display Co., Ltd. | Micro led display device |
US11990499B2 (en) | 2020-08-24 | 2024-05-21 | PlayNitride Display Co., Ltd. | Display apparatus and method of fabricating the same |
EP4244896A4 (en) * | 2020-11-11 | 2024-11-06 | Applied Materials, Inc. | Display front panel device |
US12224271B2 (en) | 2020-03-10 | 2025-02-11 | Meta Platforms Technologies, Llc | Integrating control circuits with light emissive circuits with dissimilar wafer sizes |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI743735B (en) * | 2020-04-08 | 2021-10-21 | 國立清華大學 | Method for making inkjet-printed encapsulated quantum dots, light conversion unit, and micro-light emitting diode display panel |
CN113725340B (en) * | 2021-08-31 | 2024-12-06 | 錼创显示科技股份有限公司 | Micro LED display device |
TWI815261B (en) * | 2021-12-27 | 2023-09-11 | 財團法人工業技術研究院 | Light color conversion layer structure, method of manufacturing the same and light emitting device containing the same |
CN114628566B (en) * | 2022-03-28 | 2023-06-09 | 东莞市中麒光电技术有限公司 | Light color conversion structure, light-emitting unit and manufacturing method of light-emitting unit |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035815A (en) * | 2011-09-29 | 2013-04-10 | 光颉科技股份有限公司 | Packaging structure of light emitting diode and manufacturing method thereof |
US20150364523A1 (en) * | 2014-06-12 | 2015-12-17 | Japan Display Inc. | Display device |
CN105339996A (en) * | 2013-06-18 | 2016-02-17 | 勒克斯维科技公司 | Led display with wavelength conversion layer |
CN106298691A (en) * | 2015-05-29 | 2017-01-04 | 鸿富锦精密工业(深圳)有限公司 | Organic light-emitting display device and manufacture method thereof |
CN106526958A (en) * | 2017-01-20 | 2017-03-22 | 深圳市华星光电技术有限公司 | Display panel and liquid crystal display equipment |
WO2017163598A1 (en) * | 2016-03-24 | 2017-09-28 | ソニー株式会社 | Light emitting device, display apparatus, and illumination apparatus |
CN107507845A (en) * | 2016-06-14 | 2017-12-22 | 群创光电股份有限公司 | Display device |
CN107922276A (en) * | 2015-08-12 | 2018-04-17 | 康宁股份有限公司 | Sealing device and its manufacture method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107068707A (en) * | 2017-06-13 | 2017-08-18 | 深圳市华星光电技术有限公司 | Micro LED chromatic displays |
TWI739931B (en) * | 2017-10-18 | 2021-09-21 | 優顯科技股份有限公司 | Display device |
CN107731863A (en) * | 2017-11-06 | 2018-02-23 | 友达光电股份有限公司 | Light emitting diode display |
CN107993583B (en) * | 2017-11-27 | 2019-09-17 | 武汉华星光电技术有限公司 | Micro-led display device and preparation method thereof |
-
2018
- 2018-05-08 CN CN201810433451.2A patent/CN108573992A/en active Pending
- 2018-06-22 TW TW107121606A patent/TWI690074B/en active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035815A (en) * | 2011-09-29 | 2013-04-10 | 光颉科技股份有限公司 | Packaging structure of light emitting diode and manufacturing method thereof |
CN105339996A (en) * | 2013-06-18 | 2016-02-17 | 勒克斯维科技公司 | Led display with wavelength conversion layer |
US20150364523A1 (en) * | 2014-06-12 | 2015-12-17 | Japan Display Inc. | Display device |
CN106298691A (en) * | 2015-05-29 | 2017-01-04 | 鸿富锦精密工业(深圳)有限公司 | Organic light-emitting display device and manufacture method thereof |
CN107922276A (en) * | 2015-08-12 | 2018-04-17 | 康宁股份有限公司 | Sealing device and its manufacture method |
WO2017163598A1 (en) * | 2016-03-24 | 2017-09-28 | ソニー株式会社 | Light emitting device, display apparatus, and illumination apparatus |
CN107507845A (en) * | 2016-06-14 | 2017-12-22 | 群创光电股份有限公司 | Display device |
CN106526958A (en) * | 2017-01-20 | 2017-03-22 | 深圳市华星光电技术有限公司 | Display panel and liquid crystal display equipment |
Non-Patent Citations (1)
Title |
---|
文尚胜等: "《半导体照明技术》", 31 August 2013, 华南理工大学出版社 * |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI706397B (en) * | 2018-10-12 | 2020-10-01 | 友達光電股份有限公司 | Display device and method for forming the same |
CN109755268A (en) * | 2018-12-29 | 2019-05-14 | 武汉华星光电技术有限公司 | A color conversion layer and its manufacturing method, and a display panel |
US11056661B2 (en) | 2018-12-29 | 2021-07-06 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Color conversion layer, manufacturing method thereof, and display panel |
WO2020133787A1 (en) * | 2018-12-29 | 2020-07-02 | 武汉华星光电技术有限公司 | Color conversion layer and manufacturing method therefor, and display panel |
CN109671365A (en) * | 2019-01-30 | 2019-04-23 | 京东方科技集团股份有限公司 | Micro-LED display base plate and preparation method thereof, display device |
WO2021000517A1 (en) * | 2019-06-30 | 2021-01-07 | 成都辰显光电有限公司 | Color conversion component and display device |
US12032179B2 (en) | 2019-06-30 | 2024-07-09 | Chengdu Vistar Optoelectronics Co., Ltd. | Color conversion component and display device |
CN112216774A (en) * | 2019-07-11 | 2021-01-12 | 成都辰显光电有限公司 | Color conversion assembly, display panel and manufacturing method |
WO2021004097A1 (en) * | 2019-07-11 | 2021-01-14 | 成都辰显光电有限公司 | Color conversion assembly, display panel and manufacturing method for color conversion assembly |
US12096674B2 (en) | 2019-07-11 | 2024-09-17 | Chengdu Vistar Optoelectronics Co., Ltd. | Color conversion assembly, display panel and manufacturing method of color conversion assembly |
CN111261658A (en) * | 2020-02-10 | 2020-06-09 | Tcl华星光电技术有限公司 | Micro light-emitting diode display panel and transfer method of micro light-emitting diode |
WO2021159564A1 (en) * | 2020-02-10 | 2021-08-19 | Tcl华星光电技术有限公司 | Micro light emitting diode display panel and transfer printing method for micro light emitting diode |
CN111261658B (en) * | 2020-02-10 | 2023-02-28 | Tcl华星光电技术有限公司 | Micro light-emitting diode display panel and transfer printing method of micro light-emitting diode |
CN113327521A (en) * | 2020-02-28 | 2021-08-31 | 成都辰显光电有限公司 | Display panel, preparation method of display panel and color conversion structure |
CN113327521B (en) * | 2020-02-28 | 2022-08-16 | 成都辰显光电有限公司 | Display panel, preparation method of display panel and color conversion structure |
US12224271B2 (en) | 2020-03-10 | 2025-02-11 | Meta Platforms Technologies, Llc | Integrating control circuits with light emissive circuits with dissimilar wafer sizes |
CN111580301B (en) * | 2020-06-10 | 2022-07-12 | 京东方科技集团股份有限公司 | A color filter substrate, its manufacturing method and display device |
CN111580301A (en) * | 2020-06-10 | 2020-08-25 | 京东方科技集团股份有限公司 | A color filter substrate, its manufacturing method and display device |
WO2022000219A1 (en) * | 2020-06-29 | 2022-01-06 | 重庆康佳光电技术研究院有限公司 | Light conversion layer and preparation method, and led display panel and preparation method |
CN113934316A (en) * | 2020-07-13 | 2022-01-14 | 重庆康佳光电技术研究院有限公司 | Display panel and method of making the same |
CN113934316B (en) * | 2020-07-13 | 2024-01-23 | 重庆康佳光电科技有限公司 | Display panel and preparation method thereof |
US11990499B2 (en) | 2020-08-24 | 2024-05-21 | PlayNitride Display Co., Ltd. | Display apparatus and method of fabricating the same |
CN112786577A (en) * | 2020-08-24 | 2021-05-11 | 錼创显示科技股份有限公司 | Display device and method for manufacturing the same |
EP4244896A4 (en) * | 2020-11-11 | 2024-11-06 | Applied Materials, Inc. | Display front panel device |
US20230068483A1 (en) * | 2021-08-31 | 2023-03-02 | PlayNitride Display Co., Ltd. | Micro led display device |
CN114023785B (en) * | 2021-11-02 | 2024-02-20 | 业成光电(深圳)有限公司 | Display device |
CN114023785A (en) * | 2021-11-02 | 2022-02-08 | 业成科技(成都)有限公司 | display device |
CN115083278A (en) * | 2022-06-24 | 2022-09-20 | 维沃移动通信有限公司 | Display module and electronic device |
CN115083278B (en) * | 2022-06-24 | 2024-07-16 | 维沃移动通信有限公司 | Display assembly and electronic device |
Also Published As
Publication number | Publication date |
---|---|
TWI690074B (en) | 2020-04-01 |
TW201947757A (en) | 2019-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108573992A (en) | Display panel, manufacturing method and electronic device using the display panel | |
CN110858599B (en) | Pixel array packaging structure and display panel | |
CN107211504B (en) | Display device using semiconductor light emitting device and method of manufacturing the same | |
EP3076442B1 (en) | Display device using semiconductor light emitting device | |
KR102591412B1 (en) | Display device using semiconductor light emitting diode | |
CN104584110B (en) | Display device using semiconductor light emitting device and method of fabricating the same | |
US12040435B2 (en) | Light-emitting device and image display apparatus with reflection film on side surface and layers having different refractive indices | |
CN109792817B (en) | Display device using semiconductor light-emitting device and method of manufacturing the same | |
CN107993583A (en) | Micro-led display device and preparation method thereof | |
KR102227086B1 (en) | Display device using semiconductor light emitting device | |
JP2007279480A (en) | Liquid crystal display device | |
TW201933600A (en) | Quantum dot displays and methods for fabricating quantum dot displays | |
CN110178446A (en) | Use the display device of semiconductor light-emitting elements | |
TWI635626B (en) | Illuminating device | |
CN111048498A (en) | Display device and method of making the same | |
US11984469B2 (en) | Display device | |
CN110867455B (en) | Display device | |
US20210313490A1 (en) | Display device using semiconductor light-emitting diodes | |
KR102613757B1 (en) | Display device using semiconductor light emitting device and method for manufacturing | |
KR102604006B1 (en) | Display device using semiconductor light emitting diode and method for manufacturing the same | |
KR20200005096A (en) | Display device using semiconductor light emitting device and method for manufacturing | |
KR20200006843A (en) | Display device using semiconductor light emitting device | |
KR20110061421A (en) | LED package and liquid crystal display device having same | |
CN222051771U (en) | Micro-light-emitting device display panel | |
US20210408333A1 (en) | Display device using semiconductor light emitting device and method for manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180925 |
|
WD01 | Invention patent application deemed withdrawn after publication |