CN108540910A - Microphone and preparation method thereof - Google Patents
Microphone and preparation method thereof Download PDFInfo
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- CN108540910A CN108540910A CN201710126748.XA CN201710126748A CN108540910A CN 108540910 A CN108540910 A CN 108540910A CN 201710126748 A CN201710126748 A CN 201710126748A CN 108540910 A CN108540910 A CN 108540910A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 40
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 23
- 238000006396 nitration reaction Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000006056 electrooxidation reaction Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 163
- 238000010586 diagram Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Abstract
Present invention is disclosed a kind of microphones and preparation method thereof.The production method of microphone provided by the invention, including front-end architecture is provided；The first backsheet layer is formed on the front-end architecture；The first wall is formed on first backsheet layer, first wall has first to sacrifice part；Vibration film layer is formed on first wall；The second wall is formed in the vibration film layer, second wall has second to sacrifice part, and second sacrifice part is corresponding with the first sacrifice part；The second backsheet layer is formed on second wall；It removes described second and sacrifices part, the first sacrifice part, and form pedestal.Thus obtained microphone is double back board structures, increases amplified signal, improves APT performances, can cope with various encapsulation modes；And double back board structures can eliminate the undercutting of wall and backboard, reduce the influence of electrochemical corrosion.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of microphone and preparation method thereof.
Background technology
Microphone is a kind of senser element that acoustic energy can be converted into electric energy, capacitance type minitype Mechatronic Systems
The principle of (Condenser MEMS) microphone is exactly the vibration for causing to vibrate mould by acoustic pressure, and then changes capacitance and cause electricity
The change of pressure.Now, with the development of science and technology with the continuous growth of demand, demand of the people to Condenser MEMS microphones
Amount is also more and more, and the microphone demand of especially high s/n ratio is growing at top speed.
In general, the encapsulation of microphone is according to the mode difference of air inlet, there are two types of pattern, bottom pattern (bottom
Type) ratio top pattern (top type) has the back of the body chamber (Back volume) of bigger, also implies that the microphone of bottom pattern has
Higher SNR (signal-to-noise ratio), but the microphone air pressure of bottom pattern test (air pressure test, APT) performance compared with
Difference.
Invention content
The purpose of the present invention is to provide a kind of microphone and its production method, improve the performance of microphone.
In order to solve the above technical problems, the present invention provides a kind of production method of microphone, including：
Front-end architecture is provided；
The first backsheet layer is formed on the front-end architecture；
The first wall is formed on first backsheet layer, first wall has first to sacrifice part；
Vibration film layer is formed on first wall；
Forming the second wall in the vibration film layer, second wall has second to sacrifice part, and described the
Two sacrifice parts are corresponding with the first sacrifice part；
The second backsheet layer is formed on second wall；And
It removes second sacrifice part, the first sacrifice part and the front-end architecture and is being located at first sacrifice part just
The part of lower section is to form pedestal.
Optionally, for the production method of the microphone, the front-end architecture includes substrate, is located on the substrate
First medium layer and the second dielectric layer that is surrounded by the first medium layer on the substrate.
Optionally, for the production method of the microphone, first backsheet layer has multiple first acoustic aperture, described
Vibrating film layer, there are multiple vibration holes, second backsheet layer to have multiple second acoustic aperture, and described first sacrifices part covering institute
State multiple first acoustic aperture region.
Optionally, for the production method of the microphone, the multiple first acoustic aperture region is located at described the
On second medium layer.
Optionally, for the production method of the microphone, the first wall, institute are formed on first backsheet layer
State the first wall includes with the step of the first sacrifice part：
The first oxide layer is deposited, first oxide layer covers first backsheet layer；
Both sides in first oxide layer form groove, and the groove is located above the first medium layer；
The first nitration case is formed in the trench；
Carry out flatening process so that first oxide layer and the first nitration case upper surface flush, first nitridation
The first oxide layer between layer sacrifices part as described first.
Optionally, for the production method of the microphone, the step of vibration film layer is formed on first wall
Suddenly include：
It patterns described first and sacrifices part, form multiple first recess and the second recess；
Deposits diaphragm material layer covers upper surface and the side wall of first wall, and the diaphragm material layer
One end exposes first backboard, and the other end covers first backboard and the front-end architecture；
Multiple vibration holes are formed on the diaphragm material layer, expose first oxide layer and the first nitration case,
Obtain the vibration film layer.
Optionally, for the production method of the microphone, depth of described first depth being recessed than the second recess
It is deep.
Optionally, for the production method of the microphone, first recess is wide at the top and narrow at the bottom, and second recess is in
Annular, and upper and lower equivalent width.
Optionally, for the production method of the microphone, the vibration film layer corresponds to first recess and is formed
Damper leg, the vibration film layer correspond to second recess and form fold.
Optionally, for the production method of the microphone, the second wall is formed in the vibration film layer, it is described
Second wall has second to sacrifice part, and described second sacrifices part step packet corresponding with the first sacrifice part
It includes：
The second oxide layer is deposited, second oxide layer covers the vibration film layer；
Second oxide layer is etched, retains part corresponding with the first sacrifice part, as the second sacrifice portion
Point；
Part both sides, which are sacrificed, described second deposits the second nitration case；
Carry out flatening process so that described second sacrifices part and the second nitration case upper surface flush.
Optionally, for the production method of the microphone, the second backsheet layer is formed on second wall
Step includes：
It patterns described second and sacrifices part, form multiple third recess；
The second back veneer material layer is deposited, upper surface and the side wall of second wall are covered, and covers the vibrating membrane
Layer, and described second back veneer material layer one end connects first backboard, the other end passes through the vibration film layer and described first
Backboard is isolated；
Multiple second acoustic aperture are formed on the second back veneer material layer, are exposed described second and are sacrificed part and the second nitrogen
Change layer, obtains second backsheet layer.
Optionally, for the production method of the microphone, the third recess is wide at the top and narrow at the bottom and deep with first
Degree.
Optionally, for the production method of the microphone, second backsheet layer corresponds to the third recess shape
At damper leg.
Optionally, for the production method of the microphone, patterning described second sacrifices part, forms multiple thirds
While recess, further include：
Second nitration case is patterned, multiple 4th recess are formed.
Optionally, for the production method of the microphone, second backsheet layer corresponds to the 4th recess shape
At Fastening Column.
Optionally, for the production method of the microphone, formed on second wall the second backsheet layer it
Afterwards, in the case where removing second sacrifice part, the first sacrifice part and the front-end architecture and being located at first sacrifice part just
The part of side is before forming pedestal, to further include：
Metal gasket is formed on second backsheet layer.
The present invention also provides a kind of microphones, including：
Pedestal；
The first backsheet layer being located on the pedestal；
The first wall on first backsheet layer；
Vibration film layer on first wall；
The second wall in the vibration film layer；
The second backsheet layer on second wall.
Optionally, for the microphone, first backsheet layer has multiple first acoustic aperture, the vibration film layer tool
There are multiple vibration holes, second backsheet layer that there are multiple second acoustic aperture.
Optionally, for the microphone, the vibration film layer has spaced multiple damper legs and fold.
Optionally, for the microphone, second backsheet layer has multiple damper legs and multiple Fastening Columns,
The Fastening Column is set in second wall.
Optionally, further include the metal gasket being located on the second backsheet layer for the microphone.
The production method of microphone provided by the invention, including：Front-end architecture is provided；Is formed on the front-end architecture
One backsheet layer；The first wall is formed on first backsheet layer, first wall has first to sacrifice part；Institute
It states and forms vibration film layer on the first wall；The second wall is formed in the vibration film layer, second wall has
Second sacrifices part, and second sacrifice part is corresponding with the first sacrifice part；It is formed on second wall
Second backsheet layer；And removal described second sacrifice part, first sacrifice part and the front-end architecture be located at it is described first sacrificial
Part immediately below domestic animal part is to form pedestal.The microphone obtained as a result, is double back board structures, increases amplified signal, carries
High APT performances can cope with various encapsulation modes；And double back board structures can eliminate the undercutting of wall and backboard, reduce
The influence of electrochemical corrosion so that the present invention Mike's wind energy well adapt to all kinds of high-end products of Vehicles Collected from Market
Demand.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of microphone；
The flow chart of the production method of microphone in the one embodiment of the invention of the positions Fig. 2；
Fig. 3-Fig. 4 is the schematic diagram that front-end architecture is provided in one embodiment of the invention；
Fig. 5 is the schematic diagram that the first backsheet layer is formed in one embodiment of the invention；
Fig. 6-7 is the schematic diagram that the first wall is formed in one embodiment of the invention；
Fig. 8-9 is the schematic diagram that vibration film layer is formed in one embodiment of the invention；
Figure 10 is the schematic diagram that the second wall is formed in one embodiment of the invention；
Figure 11-Figure 12 is the schematic diagram that the second backsheet layer is formed in one embodiment of the invention；
Figure 13 is the schematic diagram of the microphone obtained in one embodiment of the invention.
Specific implementation mode
The microphone and preparation method thereof of the present invention is described in more detail below in conjunction with schematic diagram, wherein indicating
The preferred embodiment of the present invention, it should be appreciated that those skilled in the art can change invention described herein, and still real
The advantageous effects of the existing present invention.Therefore, following description should be understood as the widely known of those skilled in the art, and simultaneously
Not as limitation of the present invention.
The present invention is more specifically described by way of example with reference to attached drawing in the following passage.It is wanted according to following explanation and right
Ask book, advantages and features of the invention that will become apparent from.It should be noted that attached drawing is all made of very simplified form and uses non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
It is a kind of bottom pattern (bottom specifically referring to FIG. 1, showing a kind of structural schematic diagram of microphone
Type microphone) comprising pedestal 1 vibrates film layer 2, wall 3 and backsheet layer 4.But inventor is in long-term research
It was found that the microphone of this structure, acoustic pressure is directly acted in vibration film layer 2, can lead the breakage of vibration film layer 2 in this way, from
And make air pressure test (air pressure test, APT) failure.
Then, inventor proposes a kind of new microphone and its manufacturing method, using the structure of upper layer and lower layer backboard, with solution
Certainly this problem.
The production method of the microphone of the present invention, including：
Step S11, provides front-end architecture；
Step S12 forms the first backsheet layer on the front-end architecture；
Step S13, forms the first wall on first backsheet layer, and first wall has the first sacrifice portion
Point；
Step S14 forms vibration film layer on first wall；
Step S15, forms the second wall in the vibration film layer, and second wall has the second sacrifice portion
Point, second sacrifice part is corresponding with the first sacrifice part；
Step S16 forms the second backsheet layer on second wall；And
Step S17, it is sacrificial that removal second sacrifice part, the first sacrifice part and the front-end architecture are located at described first
Part immediately below domestic animal part is to form pedestal.
The microphone and preparation method thereof of the present invention is described in detail below.
It please refers to Fig.2 and Fig. 3-Figure 13, the production method of microphone of the invention includes the following steps：
As Figure 3-Figure 4, step S11 is executed, front-end architecture is provided.Specifically, the front-end architecture includes substrate 10,
The substrate 10 can be selected as monocrystalline silicon or polysilicon, and monocrystalline silicon is used in the present embodiment.It is formed on the substrate 10
First medium layer 11, such as the first medium layer 11 can be silicon nitride materials, can be by deposition after, carry out chemical wet etching
It obtains.As shown in figure 4, after the formation of first medium layer 11, the formation of second dielectric layer 12 is carried out, the second dielectric layer 12 can
To be oxidation silicon material, surrounded by first medium layer 11.The offer of the front-end architecture can be completed according to the prior art, this hair
It is bright not to be particularly limited.
Referring to FIG. 5, executing step S12, the first backsheet layer 13 is formed on the front-end architecture.Specifically, described
One backsheet layer 13 has multiple first acoustic aperture 131, and first backsheet layer 13 can be polycrystalline silicon material, heavy via depositing operation
Product is on front-end architecture.Then chemical wet etching process is carried out, multiple first are formed at the middle section 132 of the first backsheet layer 13
Acoustic aperture 131, wherein the middle section 132 refers to the part for being located at the top of the second dielectric layer 12, i.e., the multiple the
One acoustic aperture, 131 region is located in the second dielectric layer 12.The quantity and dimensions of first acoustic aperture 131 can be according to
Depending on actual demand.For example, the aperture of first acoustic aperture 131 is 6 μm -8 μm, the thickness of first backsheet layer 13
It can be 1.8 μm -2.4 μm.
It please refers to Fig. 6-Fig. 7, executes step S13, form the first wall on first backsheet layer 13, described first
Wall has first to sacrifice part 142.Specifically, first sacrifice part 142 covers 131 institute of the multiple first acoustic aperture
Can deposit the first oxide layer 14 first, first oxide layer 14 covers first backsheet layer 13, such as Fig. 6 in region
It is shown, chemical wet etching process is carried out to first oxide layer 14, the both sides in first oxide layer 14 form groove
141, the groove 141 is located at 13 top of the second dielectric layer；Then, it in conjunction with shown in Fig. 7, is formed in the groove 141
First nitration case 15；Then flatening process, e.g. chemical mechanical grinding (CMP) technique are carried out so that first oxidation
Layer 14 and 15 upper surface flush of the first nitration case, the first oxide layer 14 between first nitration case 15 are sacrificial as described first
Domestic animal part 142.
Wherein, the material of first oxide layer 14 can be selected as silica, and the material of first nitration case 15 can
To be selected as silicon nitride, the width of the groove 141 can be 0.7 μm -0.9 μm.And after planarization, described first
The thickness of wall is 2.6 μm -3.2 μm.
Fig. 8-Fig. 9 is please referred to, step S14 is executed, forms vibration film layer 16 on first wall.Specifically, institute
Stating vibration film layer 16 has multiple vibration holes 163, as shown in figure 8, patterning described first sacrifices part 142, formation multiple the
One recess 143 and the second recess 144；It is the multiple first recess 143 and second recess 144 formation can by photoetching, return
It flows the processes such as (reflow), etching to complete, this process dawn known to those skilled in the art.In the present embodiment, described first
The depth of recess 143 is deeper than the depth of the second recess 144, for example, the depth of first recess 143 is 0.8 μm -1.2 μm.Institute
It is annular in shape to state the second recess 144, diameter can be 280 μm -300 μm, and depth is 0.3 μm -0.6 μm, and width is 5.5 μm -6.5
μm.Optionally, first recess 143 is wide at the top and narrow at the bottom, second recess, about 144 equivalent widths.The multiple first is recessed
Fall into 143 and second the presence of recess 144 will change the structure and shape of vibration film layer 16 being subsequently formed, to improve vibrating membrane
The quality of layer 16.It should be noted that the first recess 143 and the first acoustic aperture 131 are only signals in Fig. 8, it is intended merely to preferably
The structure for showing the first recess 143, second recess 144 can not be understood as the first recess 143 and second recess 144
Size is more than the size of the first acoustic aperture 131, other views (and subsequent third recess 171) are similarly.
Referring to FIG. 9, deposits diaphragm material layer, upper surface and the side wall of first wall are covered, and described is shaken
Dynamic membrane layers one end exposes first backboard 13, and the other end covers first backboard 13 and the front-end architecture；So
Multiple vibration holes 163 are formed on the diaphragm material layer afterwards, expose first oxide layer, 14 and first nitration case 15,
The vibration film layer 16 is obtained, the aperture in the vibration hole 163 can be 1 μm -2 μm.The vibration hole 163 has conducive to follow-up
Acid solution when etching penetrates, buffering vibration film layer 16, and the effects that tested.
As illustrated in figs. 8-9, the vibration film layer 16 corresponds to and forms damper leg 162 at first recess 143, described
Vibration film layer 16 corresponds to and forms fold 161 at second recess 144.The specification of the damper leg 162 and fold 161 with it is right
The first recess 143 answered and the second recess 144 are consistent.The damper leg 162 can prevent vibration film layer 16 and the as a result,
Contact between one backboard 13, and fold 161 can then improve the performance of vibration film layer 16, prevent breakage.
Referring to FIG. 10, executing step S15, the second wall, second interval are formed in the vibration film layer 16
Layer has second to sacrifice part 17, and the second sacrifice part 17 is corresponding with the first sacrifice part.Specifically, can be
The second oxide layer is first deposited, second oxide layer covers the vibration film layer 16；Then second oxide layer is etched, is retained
Part corresponding with the first sacrifice part, sacrifices part 17 as second；Later 17 liang of part is sacrificed described second
Side deposits the second nitration case 18；Carry out flatening process, such as CMP process so that described second sacrifices part 17 and the second nitrogen
Change 18 upper surface flush of layer.
Wherein, the material of second oxide layer can be selected as silica, and the material of second nitration case 18 can be with
It is selected as silicon nitride, thickness can be corresponding (identical or very nearly the same) respectively at the first oxide layer and the second nitration case,
It can also be according to actual demand otherwise designed.And after planarization, the thickness of second wall is 2.6 μm of -3.2 μ
m。
1- Figure 12 is please referred to Fig.1, step S16 is executed, forms the second backsheet layer 19 on second wall.Specifically
, second backsheet layer 19 has multiple second acoustic aperture 191, Ke Yishi, patterns described second first and sacrifices part 17, shape
At multiple thirds recess 171；And it is possible to pattern second nitration case simultaneously, multiple 4th recess 181 are formed；For example,
The depth of the third recess 171 is 0.8 μm -1.2 μm, and the depth of the 4th recess 181 is 0.3 μm -0.6 μm.Optionally,
The third recess 171 is wide at the top and narrow at the bottom, about 181 equivalent widths of the 4th recess.The multiple third recess 171 and the 4th
The presence of recess 181 will change the structure and shape for the second backsheet layer 19 being subsequently formed, to improve the second backsheet layer 19
Quality.Then, the second back veneer material layer is deposited, upper surface and the side wall of second wall are covered, and covers the vibration
Film layer 16, and described second back veneer material layer one end connects first backboard 13, the other end by the vibration film layer 16 and
First backboard 13 is isolated；Later, multiple second acoustic aperture 191 are formed on the second back veneer material layer, are exposed described
Second sacrifices part 17 and the second nitration case 18, obtains second backsheet layer 19.The specification of second acoustic aperture 191 can be with
First acoustic aperture 131 is consistent, and second backsheet layer 19 is located at the thickness above second wall and can be carried on the back with first
Plate layer 13 is consistent.
As shown in Figure 11-Figure 12, second backsheet layer 19 corresponds to and forms damper leg 192 at the third recess 171,
Second backsheet layer 19, which corresponds to, forms Fastening Column 193, the damper leg 192 and fastening branch at the 4th recess 181
The specification of column 193 is consistent with corresponding third recess 171 and the 4th recess 181.The damper leg 192 can be to prevent as a result,
The contact between film layer 16 and the second backsheet layer 19 is only vibrated, and Fastening Column 193 can then make the second backsheet layer 19 more
It is firm, it prevents from being detached from damaged.
Please continue to refer to Figure 12, metal gasket 20, the material example of the metal gasket 20 are formed on second backsheet layer 19
It can be such as copper, chromium, prior art completion may be used.
3 are please referred to Fig.1, step S17 is executed, part, the first sacrifice part and front end knot are sacrificed in removal described second
Structure is located at described first and sacrifices the part immediately below part to form pedestal.Specifically, can be by second acoustic aperture
191, hole 163 is vibrated, the first acoustic aperture 131 removes described second and sacrifices part, the first sacrifice part, and removes the front-end architecture
Part immediately below the multiple first acoustic aperture, 131 region (i.e. the middle section 132 of the first backsheet layer 13), for
What front-end architecture specifically removed is the substrate below second dielectric layer and second dielectric layer, to form pedestal 10'.This process
It may be used and excute a law etching to complete.
Please continue to refer to Figure 13, by above-mentioned steps, a kind of microphone that the present invention obtains, including：
Pedestal 10', the pedestal include substrate and first medium layer 11；
The first backsheet layer 13 being located on the pedestal 10', first backsheet layer 13 have multiple first acoustic aperture
131, the multiple first acoustic aperture, 131 region is the middle section 132 of the first backsheet layer 13, and is located at the pedestal 10'
At intermediate empty portions；
The first wall on first backsheet layer 13, first separation layer correspond on the pedestal 10'
Side, including 15 two parts of the first oxide layer 14 and first medium layer；
Vibration film layer 16 on first wall, the vibration film layer 16 have multiple vibration holes 163, and
Spaced multiple damper legs 162 and fold 161；
The second wall in the vibration film layer 16, second wall correspond to above the pedestal 10',
Second wall includes second dielectric layer 18；
The second backsheet layer 19 on second wall, second backsheet layer 19 have multiple second acoustic aperture
191, also there is second backboard 19 multiple damper legs 192 and multiple Fastening Columns 193, the Fastening Column 193 to be arranged
In second wall；And
Metal gasket 20 on the second backsheet layer 19.
In conclusion the production method of microphone provided by the invention, including：Front-end architecture is provided；It is tied in the front end
The first backsheet layer is formed on structure；The first wall is formed on first backsheet layer, first wall is sacrificial with first
Domestic animal part；Vibration film layer is formed on first wall；Form the second wall in the vibration film layer, described second
Wall has second to sacrifice part, and second sacrifice part is corresponding with the first sacrifice part；Between described second
The second backsheet layer is formed on interlayer；And part is sacrificed in removal described second, the first sacrifice part is located at the front-end architecture
Described first sacrifices the part immediately below part to form pedestal.The microphone obtained as a result, is double back board structures, increases and puts
Big signal improves APT performances, can cope with various encapsulation modes；And double back board structures can eliminate the bottom of wall and backboard
Cut, reduce the influence of electrochemical corrosion so that the present invention Mike's wind energy well adapt to all kinds of of Vehicles Collected from Market
The demand of high-end product.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (21)
1. a kind of production method of microphone, including：
Front-end architecture is provided；
The first backsheet layer is formed on the front-end architecture；
The first wall is formed on first backsheet layer, first wall has first to sacrifice part；
Vibration film layer is formed on first wall；
The second wall is formed in the vibration film layer, second wall has second to sacrifice part, and described second is sacrificial
Domestic animal part is corresponding with the first sacrifice part；
The second backsheet layer is formed on second wall；And
It removes second sacrifice part, the first sacrifice part and the front-end architecture and is located at first sacrifice part underface
Part to form pedestal.
2. the production method of microphone as described in claim 1, which is characterized in that the front-end architecture includes substrate, is located at
First medium layer on the substrate and the second dielectric layer surrounded by the first medium layer on the substrate.
3. the production method of microphone as claimed in claim 2, which is characterized in that first backsheet layer has multiple first
There are multiple vibration holes, second backsheet layer to have multiple second acoustic aperture, first sacrifice portion for acoustic aperture, the vibration film layer
Divide and covers the multiple first acoustic aperture region.
4. the production method of microphone as claimed in claim 3, which is characterized in that the multiple first acoustic aperture region position
In in the second dielectric layer.
5. the production method of microphone as claimed in claim 4, which is characterized in that form first on first backsheet layer
Wall, first wall include with the step of the first sacrifice part：
The first oxide layer is deposited, first oxide layer covers first backsheet layer；
Both sides in first oxide layer form groove, and the groove is located above the first medium layer；
The first nitration case is formed in the trench；
Carry out flatening process so that first oxide layer and the first nitration case upper surface flush, first nitration case it
Between the first oxide layer as it is described first sacrifice part.
6. the production method of microphone as claimed in claim 5, which is characterized in that form vibration on first wall
The step of film layer includes：
It patterns described first and sacrifices part, form multiple first recess and the second recess；
Deposits diaphragm material layer covers upper surface and the side wall of first wall, and diaphragm material layer one end
First backboard is exposed, the other end covers first backboard and the front-end architecture；
Multiple vibration holes are formed on the diaphragm material layer, expose first oxide layer and the first nitration case, are obtained
The vibration film layer.
7. the production method of microphone as claimed in claim 6, which is characterized in that the depth of first recess is more recessed than second
Sunken depth is deep.
8. the production method of microphone as claimed in claim 6, which is characterized in that first recess is wide at the top and narrow at the bottom, described
Second is recessed in a ring, and upper and lower equivalent width.
9. the production method of microphone as claimed in claim 8, which is characterized in that it is recessed that the vibration film layer corresponds to described first
Sunken place forms damper leg, and the vibration film layer corresponds to second recess and forms fold.
10. the production method of microphone as claimed in claim 5, which is characterized in that form second in the vibration film layer
Wall, second wall have second to sacrifice part, and second sacrifice part is opposite with the first sacrifice part
The step of answering include：
The second oxide layer is deposited, second oxide layer covers the vibration film layer；
Second oxide layer is etched, retains part corresponding with the first sacrifice part, sacrifices part as second；
Part both sides, which are sacrificed, described second deposits the second nitration case；
Carry out flatening process so that described second sacrifices part and the second nitration case upper surface flush.
11. the production method of microphone as claimed in claim 10, which is characterized in that form on second wall
The step of two backsheet layers includes：
It patterns described second and sacrifices part, form multiple third recess；
The second back veneer material layer is deposited, upper surface and the side wall of second wall are covered, and covers the vibration film layer, and
Described second back veneer material layer one end connects first backboard, the other end by the vibration film layer and first backboard every
From；
Multiple second acoustic aperture are formed on the second back veneer material layer, are exposed described second and are sacrificed part and the second nitridation
Layer obtains second backsheet layer.
12. the production method of microphone as claimed in claim 11, which is characterized in that the third recess is wide at the top and narrow at the bottom, and
With the first depth.
13. the production method of microphone as claimed in claim 12, which is characterized in that second backsheet layer corresponds to described
Three recess form damper leg.
14. the production method of microphone as claimed in claim 11, which is characterized in that patterning described second sacrifices part,
While forming multiple third recess, further include：
Second nitration case is patterned, multiple 4th recess are formed.
15. the production method of microphone as claimed in claim 14, which is characterized in that second backsheet layer corresponds to described
Four recess form Fastening Column.
16. the production method of microphone as described in claim 1, which is characterized in that form on second wall
After two backsheet layers, it is sacrificial positioned at described first to sacrifice part, the first sacrifice part and the front-end architecture in removal described second
Part immediately below domestic animal part is before forming pedestal, to further include：
Metal gasket is formed on second backsheet layer.
17. a kind of microphone, which is characterized in that including：
Pedestal；
The first backsheet layer being located on the pedestal；
The first wall on first backsheet layer；
Vibration film layer on first wall；
The second wall in the vibration film layer；
The second backsheet layer on second wall.
18. microphone as claimed in claim 17, which is characterized in that first backsheet layer has multiple first acoustic aperture, institute
Stating vibration film layer, there are multiple vibration holes, second backsheet layer to have multiple second acoustic aperture.
19. microphone as claimed in claim 17, which is characterized in that the vibration film layer has spaced multiple bufferings
Pillar and fold.
20. microphone as claimed in claim 17, which is characterized in that second backsheet layer has multiple damper legs and more
A Fastening Column, the Fastening Column are set in second wall.
21. microphone as claimed in claim 17, which is characterized in that further include the metal gasket being located on the second backsheet layer.
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| CN112104961A (en) * | 2020-09-21 | 2020-12-18 | 无锡韦尔半导体有限公司 | Micro-electro-mechanical structure and MEMS microphone |
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