CN1085393C - Structure and production of solid electrolytic capacitor - Google Patents

Abstract

The present invention relates to a structure of a solid electrolytic capacitor. One end of a porous chip sintered by using metal particles of tantalum, etc. is provided with a non-porous part, a dielectric film of tantalum pentoxide, etc. is formed on the rest of part except for the end surface of one end on the chip, a solid electrolyte layer of manganese dioxide, etc. and a cathode film are formed on the part except for the non-porous part on the chip, and an anode terminal film is formed on the end surface of the non-porous part.

Description

The structure of solid electrolytic capacitor and the manufacture method of solid electrolytic capacitor

The present invention relates to try hard to reach the structure of solid electrolytic capacitors such as the tantalum solid electrolytic capacitor of small-sized high capacity or solid aluminium electrolytic capacitor and the method for making this solid electrolytic capacitor.

In the past, the capacitor element 1 in this solid electrolytic capacitor was to adopt following method to make.

As shown in figure 31, at first metallic particles such as tantalum are sintered into porous chip 2, will be fixed on this chip 2 with metal anode rods 3 such as tantalums simultaneously.

Shown in figure 32, this chip 2 is immersed in the chemical combination liquid such as phosphate aqueous solution A, and under this state, passes to direct current and carry out anodic oxidation, so form deielectric-coating 4 such as tantalum pentoxide on the surface of each metallic particles in chip 2.

In this state chip 2 is immersed in the chemical combination liquid such as phosphate aqueous solution A, and the upper surface that makes this chip 2 reaches a certain appropriate depth H apart from the liquid level of chemical combination liquid such as phosphate aqueous solution A, thereby on the outer surface of the root of above-mentioned anode rod 3, the same deielectric-coating 4a. such as tantalum pentoxide that forms in the four corner of suitable height H part

Then, as shown in figure 33, at deielectric-coating 4 such as the above-mentioned tantalum pentoxides of formation, after the operation of 4a finishes, said chip 2 is immersed among the manganese nitrate aqueous solution B, make manganese nitrate aqueous solution B be impregnated into the inside of chip 2, put forward to carry out sintering then, carry out several so repeatedly, so on the surface of deielectric-coating such as above-mentioned tantalum pentoxide 4, form the solid electrolyte layer that constitutes by manganese dioxide 5 metal oxides such as grade, perhaps adopt chemical polymerization or electrolytic oxidation polymerization method or gaseous polymerization, on the surface of deielectric-coating such as above-mentioned tantalum pentoxide 4, be split into the solid electrolyte layer that constitutes by organic semiconductor film.

Then, except that the upper surface of said chip 2, on its whole outer peripheral faces, form after the graphite film, form by metal cathodic coatings such as silver or nickel again, so constitute above-mentioned capacitor element 1.

In other words, capacitor element 1 in the solid electrolytic capacitor in the past is in the process when forming deielectric-coating 4 such as tantalum pentoxide on the surface of the metallic particles in chip 2, to on the outer surface of the root of the anode rod 3 on this fixing chip 2, also form deielectric-coating 4a such as tantalum pentoxide, and this deielectric-coating is connected with the deielectric-coating such as tantalum pentoxide 4 that form on above-mentioned surface of metal particles, therefore makes conduction between the negative electrode of anode rod 3 in deielectric-coating 4a such as tantalum pentoxide and solid electrolyte layers such as anode and manganese dioxide 5 and isolates (insulation).

Therefore, on old solid electrolytic capacitor, the anode rod 3 neat undercuts of stretching from chip 2 can not be removed, so solid electrolytic capacitor of old physical plane mount type, as described in Japan's bulletin communique, special fair 3-30977 communique, and the capacitor element 1 of Gou Chenging as shown in figure 34, be that a lead terminal 6a among pair of right and left lead terminal 6a, the 6b is on the fixed chip 2, another lead terminal 6b then is fixed on the anode rod of stretching from this chip 23, with molding synthetic resin part 7 its overall package is got up then.Perhaps as shown in figure 35, with lining materials such as synthetic resin 8, the bottom surface of the chip in the capacitor element 12 and the part except that the front end of anode rod 3 are encapsulated, and cathode terminal 9a is welded on the bottom surface of said chip 2 with scolding tin, with scolding tin anode terminal 9b is welded on the front end of above-mentioned anode rod 3 simultaneously.

That is to say, old solid electrolytic capacitor, as mentioned above, must be with lining materials 8 such as molding synthetic resin part 7 or synthetic resin, whole capacitor device element 1 encapsulation of the anode rod 3 that will contain chip 2 and stretch from this chip 2, therefore compare with the size of capacitor element 1,, make whole size become very big owing to stretch out above-mentioned anode rod 3 from chip 2, therefore volume efficiency is low, compare friendship with its capacity, the maximization that becomes, weight has also increased.This is the place of problem.

The solid electrolytic capacitor of the identical mount type in plane particularly shown in Figure 34, if with 7 encapsulation of molding synthetic resin part, owing to bear very big stress on the chip 2, can make deielectric-coating 4 such as its tantalum pentoxide impaired, often cause electric leakage (LC) to increase, bad phenomenon such as short circuit, in other words, because defect rate is big, make that the rate of finished products when making is low.

In addition, also must carry out the moulding of molding synthetic resin part 7, article two, lead terminal 6a, the bending machining of 6b, and with 6a, 6b is fixed on the first-class operation of chip 2 and anode rod 3, make the production process complexity, simultaneously because two lead terminal 6a, the manufacturing materials expense of 6b and molding part 7 increases, rate of finished products when adding making as described above is low, make cost of manufacture increase considerably, in addition, owing to, cause the weight imbalance with 7 encapsulation of mold pressing part, when carrying out ultrasonic waves for cleaning after being installed in above the printed circuit board (PCB) etc., two lead terminal 6a, 6b often comes off from chip 2.

Technical task of the present invention provides structure of a kind of solid electrolytic capacitor that can address these problems and preparation method thereof.

In order to finish this technical task, the structure of solid electrolytic capacitor of the present invention is " sintering metallic particles such as tantalum into porous chip; the end at this chip is equipped with the imporosity parts; on the other hand; form dielectric films such as tantalum pentoxide on the remainder of an end except the surface of end of said chip; form solid electrolyte layer and cathodic coatings such as manganese dioxide on other parts except above-mentioned imporosity part on the said chip, form the anode terminal film on the end face of an above-mentioned imporosity part in two end faces of said chip ".

In addition, manufacture method of the present invention is " to it is characterized by and comprise and sinter metallic particles such as tantalum into porous chip, and form the operation of imporosity part at an end of this chip; On above-mentioned entire chip, form the operation of dielectric films such as tantalum pentoxide; The operation of solid electrolyte layer such as formation manganese dioxide and cathodic coating on other parts except that above-mentioned imporosity part on the said chip; The Surface Machining operation that metallic particles on the enterprising enforcement end face of end face of above-mentioned imporosity one side in two end faces of said chip is exposed; And the operation that on this end face, forms anode terminal ".

In this case, the end formation imporosity method partly at chip has:

(1), make megohmite insulants such as thermal endurance synthetic resin or glass be impregnated into an end of porousness chip.

(2), sheet metals such as tantalum are fixed on the end face of porousness chip.

(3), it is fixed to make the metallic particles of an end of porousness chip do no gap.

Like this, end at chip forms the porousness part, owing on entire chip, form dielectric films such as tantalum pentoxide, when then on chip, forming solid electrolyte layer such as manganese dioxide, can prevent to form on the surface of the metallic particles in above-mentioned imporosity part solid electrolyte layers such as manganese dioxide, above-mentioned imporosity part can make anode and negative electrode isolate (insulation) fully, therefore do not need as before, in order to make anode and cathode isolation (insulation), anode rod to be fixed on the chip, on the outer peripheral face of the root of this anode rod, form dielectric film again.

Therefore, adopt when of the present invention, do not need to make as before anode rod to stretch, in other words, original anode rod can be saved, only need the Chip Packaging in the capacitor element is got up to get final product from the chip of capacitor element.Therefore compare with old capacitor, can reach big capacity, small-sized, lightweight effect significantly.

In addition, the mount type if the plane coincide, do not need shown in the image pattern 34 like that, two lead terminals are fixed on the capacitor element, and partly encapsulate the whole capacitor device, therefore with containing the resin mold pressing, can reduce substandard products reliably, simultaneously can save fee of material, and can reduce manufacturing procedure, therefore have the effect that can reduce cost of manufacture significantly.

Fig. 1 is the chip oblique view that uses among the 1st embodiment of the present invention.

Fig. 2 makes megohmite insulant such as synthetic resin be impregnated into oblique view after the end of the chip among Fig. 1.

Fig. 3 is the oblique view with the stationary state on the chip of tantalum wire in Fig. 2.

Fig. 4 forms the state profile that the tantalum pentoxide dielectric film is handled on the chip that carries out in Fig. 3.

Fig. 5 forms the state profile that the solid electrolyte layer of manganese dioxide is handled on the chip in Fig. 4.

Fig. 6 on the chip in Fig. 5 removes tantalum wire the oblique drawing of the state that the back forms silverskin.

Fig. 7 is the oblique view that forms the state behind anode terminal film and the cathode terminal film on the chip in Fig. 6.

Fig. 8 is the profile along the V111-V111 direction among Fig. 7.

Fig. 9 is the oblique view of the tantalum solid electrolytic capacitor among above-mentioned the 1st embodiment.

Figure 10 is the amplification profile of the X-X direction in Fig. 9.

Figure 11 A～Figure 11 D is the 2nd of the present invention and implements illustration.

Figure 12 A～Figure 12 C is the 3rd of the present invention and implements illustration.

Figure 13 is the exploded perspective view of the 4th embodiment of the present invention.

Figure 14 is the oblique view of the chip among above-mentioned the 4th embodiment.

Figure 15 is the profile along the XV-XV direction among Figure 14.

Figure 16 is the oblique drawing of the state after being fixed on tantalum wire on the chip among Figure 14.

Figure 17 on the chip in Figure 16 removes its tantalum wire the oblique drawing of the state that the back forms silverskin.

Figure 18 is the oblique view that forms the state of anode terminal film and cathode terminal film on the chip in Figure 16.

Figure 19 is the profile along the X1X-X1X direction among Figure 18.

Figure 20 is the oblique view of the tantalum solid electrolytic capacitor among above-mentioned the 4th embodiment.

Figure 21 is along the profile along the XX1-XX1 direction among Figure 20.

Figure 22 is the oblique view of expression the 5th embodiment of the present invention.

Figure 23 is the oblique view of the chip that uses among the 6th embodiment of the present invention.

Figure 24 is the profile along the XX1V-XX1V direction among Figure 23.

Figure 25 is fixed on oblique drawing of the state on the chip among Figure 23 with tantalum wire.

Figure 26 on the chip in Figure 25 removes tantalum wire the oblique drawing of the state that the back forms silverskin.

Figure 27 is the oblique drawing of the state that forms anode terminal film and cathode terminal film on the chip of Figure 26.

Figure 28 is the profile along the XXV111-XXV111 direction among Figure 27.

Figure 29 is the oblique view of the tantalum solid electrolytic capacitor among above-mentioned the 6th embodiment.

Figure 30 is the profile along the XXX-XXX direction among Figure 29.

Figure 31 is the chip oblique view that adopts old manufacture method.

Figure 32 is the treatment state profile that forms the tantalum pentoxide dielectric film on the chip that carries out among Figure 31.

Figure 33 is the profile that forms the treatment state of manganese dioxide solid electrolyte layer on the chip that carries out in Figure 32.

Figure 34 is the sectional arrangement drawing of facing of the old tantalum solid electrolytic capacitor of expression.

Figure 35 is the sectional arrangement drawing of facing of the old another kind of solid electrolytic capacitor of expression.

Description of drawings embodiments of the invention during below with reference to the making tantalum solid electrolytic capacitor.

Fig. 1～Figure 10 represents the 1st embodiment.

As shown in Figure 1, at first with tantalum particle around forming porous chip 12, be impregnated into an end of this chip 12 again with megohmite insulants such as thermal endurance synthetic resin or glass, make the size of soaking into part reach L, form imporosity part 13.

In addition, when carrying out the soaking into of above-mentioned megohmite insulant, an end of chip 12 is immersed in the liquid megohmite insulant, perhaps utilizes spreader etc. liquid megohmite insulant to be coated in the other end of chip 12.

Secondly, as shown in Figure 3, tantalum wire 14 is weldingly fixed on left and right sides both ends of the surface 12 on the said chip 12,12 ' in, the end face 12 of above-mentioned imporosity material 13 1 sides ' on, perhaps as shown in Figure 4, after being fixed with heat-resisting conductivity adhesive paste or bonding agent, again this chip 12 is immersed among the phosphate aqueous solution A, under this state, apply direct current and carry out anodic oxidation, so form the dielectric film 15 of tantalum pentoxide on each tantalum particle surface on the entire chip 12, the root at above-mentioned tantalum wire 14 also forms the tantalum pentoxide dielectric film simultaneously.

Finish as stated above and form tantalum pentoxide 15, after the operation of 15 ' deielectric-coating, as shown in Figure 5, said chip 12 is immersed among the manganese nitrate aqueous solution B, after making manganese nitrate solution B be impregnated into the inside of chip 12, it is put forward to fire, carry out several so repeatedly, just on above-mentioned tantalum pentoxide 15 is situated between the surface of holding film, form manganese dioxide 16 solid electrolyte layers.

When forming these manganese dioxide 16 solid electrolyte layers, because aqueous solution of nitric acid B can not soak into the above-mentioned imporosity part 13 of said chip 12, therefore can prevent to form manganese dioxide 16 solid electrolyte layers on the surface of each tantalum particle in this imporosity part 13.Therefore, owing to the effect of the megohmite insulants such as synthetic resin that soak into in above-mentioned imporosity part 13, can reliably each tantalum particle in this porousness part 13 and above-mentioned manganese dioxide 16 solid electrolyte layers be done conduction isolation (insulation).

Secondly, as shown in Figure 6, on the outer surface of said chip 12, except above-mentioned imporosity part 13, promptly except imporosity part 13, the outside of the graphite film (not shown) on whole outer surface forms silverskin 17, simultaneously, adopt methods such as cutting off or peel off, make capacitor element 11 after above-mentioned tantalum wire 14 is removed.

Then as shown in Figures 7 and 8, on the surface of the silverskin 17 of above-mentioned capacitor element 11, be welded into metal level cathode terminal film 18 (in addition with scolding tin etc., also can only on the bottom surface of capacitor element 11, be welded into this cathode terminal film 18), on the other hand, to the end face 12 of imporosity part 13 1 sides on the chip 12 ' carry out attrition process, make each tantalum particle in the above-mentioned imporosity part 13 expose this end face 12 ' on.After carrying out this Surface Machining,, improve the solderability of nickel coating etc., be welded into metal level anode terminal film 19 with scolding tin etc. then the processing of this end face 12 ' carry out substrate surface.

To the end face on the said chip 12 12 ' when carrying out Surface Machining, can adopt plasma physics Surface Machining method, also can adopt the chemical surface processing method of chemicals corrosion.

Secondly, as Fig. 9 and shown in Figure 10, on the surface, outside of above-mentioned capacitor element 11, form on other parts the part of the cathode terminal film 18 on its bottom surface and the above-mentioned anode terminal film 19 thermal endurance synthetic resin or glass by overlay film 20, so made the tantalum solid electrolytic capacitor finished product of Plane Installation type.

Figure 11 A～Figure 11 D represents the 2nd embodiment.The 2nd embodiment is identical with above-mentioned manufacture method in the past, and the chip that uses preprepared use and tantalum wire to fuse is made.

Promptly shown in Figure 11 A, the sintering tantalum particle constitutes chip 20a, thereby tantalum wire 14a is fixed on this chip 12a, then shown in Figure 11 B, megohmite insulants such as thermal endurance synthetic resin or glass are impregnated into promptly with two end face 12a ', 12a on the chip 12a of tantalum wire 14a " in an end; the end that has above-mentioned tantalum wire 14a to stretch out, and make and soak into part and be of a size of L forms imporosity part 13a.Adopt then with above-mentioned the 1st embodiment in Fig. 4 and the identical method of Fig. 5, form tantalum pentoxide dielectric film 15 after, form manganese dioxide solid electrolyte layer 16 more respectively, and at graphite outside formation silverskin 17.

Secondly shown in Figure 11 C, from root tantalum wire 14a is cut off, two end face 12a ', 12 to chip 12a " in the above-mentioned end face 12a ' that the side that tantalum wire 14a stretches out arranged on carry out attrition process; this face 12a ' is processed into is roughly same plane; shown in Figure 11 D, make each tantalum particle among the imporosity part 13a simultaneously on this end face 12a '.

Identical with above-mentioned the 1st embodiment then, be welded into metallic cathode terminal film 18 and anode terminal film 19 with scolding tin etc., and form by overlay film 20, so make Plane Installation type tantalum solid electrolytic capacitor finished product.

Therefore the above-mentioned the 1st and the 2nd embodiment is fixed on tantalum wire 14,14a on chip 12, the 12a, compares with following the 3rd embodiment, and its advantage is the manufacture method that can directly adopt in the past.

Figure 12 A～Figure 12 C represents the 3rd embodiment.The 3rd embodiment is that sample uses tantalum wire unlike the above-mentioned the 1st and the 2nd embodiment, but makes tantalum solid electrolytic capacitor with no tantalum wire method.

That is to say, shown in Figure 12 A, sinter tantalum particle into porous chip 12b, shown in Figure 12 B, make insulating properties materials such as thermal endurance synthetic resin or glass be impregnated into the end of chip 12b then, and make and soak into part and be of a size of L.Form imporosity part 13b, place oxygen to carry out oxidation processes mutually this chip 12b then, form tantalum pentoxide dielectric film diaphragm, shown in Figure 12 C, be immersed among the manganese nitrate aqueous solution B, make manganese nitrate aqueous solution B be impregnated into the inside of chip 12b, put forward to carry out sintering then, carry out several so repeatedly, just on the surface of above-mentioned tantalum pentoxide dielectric film, form the manganese dioxide solid electrolyte layer.

At this moment, be impregnated among the said chip 12b, can also adopt spreader etc. that manganese nitrate aqueous solution B is coated on the chip 12b, perhaps make chip 12b touch the first-class method of the cavernous body that contains manganese nitrate aqueous solution B in advance in order to make manganese nitrate aqueous solution B.

Identical during after this with above-mentioned the 1st embodiment, form silverskin in the graphite film outside, carry out Surface Machining on the end face 12b ' to imporosity part 13b one side on the chip 12b, be welded into metallic cathode terminal film 18 and anode terminal film 19 with scolding tin etc., and form by overlay film 20, thereby make Plane Installation type tantalum solid electrolytic capacitor finished product.

This no tantalum wire facture is not owing to use tantalum wire, and do not need to carry out the fixing of tantalum wire and remove, and therefore can save Master Cost, can simplify operation simultaneously, can reduce cost of manufacture significantly.

In the 3rd embodiment, can also be with there being the parts semiconductor film to make solid electrolyte layer, this organic semiconductor film can adopt chemical polymerization or electrolytic oxidation polymerization method or gaseous polymerization to form.

Figure 13～Figure 21 represents the 4th embodiment.

As shown in figure 13, the 4th embodiment sinters tantalum particle into porous chip 12C, equally tantalum particle is sintered into porous metal and punish 13C ', sheet metal 13C ' is placed above the chip 12C, and between presss from both sides the thin slice 13C that into makes with tantalum, and the three is superimposed, as Figure 14 and shown in Figure 15, they are welded to each other, and perhaps glue or the bonding agent with heat-resisting conductivity is bonded into them as a whole.At this moment, also can before sintering, above-mentioned three be piled up, under this overlap condition, carry out sintering, make them be combined into an integral body.

Then as shown in figure 16, tantalum wire 14C is fixed on above the above-mentioned metal 13C ', adopt with the 1st example in Fig. 4 and identical method shown in Figure 5, behind the formation tantalum pentoxide dielectric film 15, form manganese dioxide solid electrolyte layer 16 again.

When forming these manganese dioxide 16 solid electrolyte layers, owing between sheet metal 13C ' and chip 12C, accompany thin slice 13C, therefore so can stop manganese nitrate aqueous solution B to be impregnated among the above-mentioned sheet metal 13C ', can prevent to form manganese dioxide solid electrolyte layer 16 on the surface of each tantalum particle among this sheet metal 13C '.Because the effect of the tantalum pentoxide dielectric film 15 that forms on the surface of above-mentioned sheet metal 13C ' and thin slice 13C can be carried out non-conductive isolation (insulation) to each tantalum particle among the sheet metal 13C ' and the last manganese dioxide solid electrolyte layer 16 that forms of said chip 12C reliably.

Later on identical with above-mentioned the 1st kind of situation, as shown in figure 17, graphite film (not shown) outside on whole outer surfaces of said chip 12C forms silverskin 17C, with methods such as cutting off or peel off above-mentioned tantalum wire 14C is removed simultaneously, make capacitor element 11C, then shown in Figure 18 and 19, on the silverskin 17C surface of capacitor element 11C, be welded into metal level cathode terminal 18C (also can send out and only on the bottom surface of capacitor element 11C, be welded into this cathode terminal film 18C) with scolding tin etc., on the other hand, end face to sheet metal 13C ' carries out attrition process etc., each tantalum particle among the sheet metal 13C ' is exposed on end face, after carrying out this Surface Machining, again this end face being carried out substrate surface handles, improve the solderability of nickel coating, be welded into metal level anode terminal film 19C with scolding tin etc. then, then as Figure 20 and shown in Figure 21, on the outer surface of capacitor element 11C, the part of cathode terminal film 18C on its bottom surface and the anode terminal film 19C its partly go up to form by thermal endurance synthetic resin or glass constitute by overlay film 20C, thereby make Plane Installation type tantalum solid electrolytic capacitor finished product.

The 4th embodiment sinters tantalum particle into porous sheet metal 13C ', between this porous sheet metal 13C ' and chip 12C, insert tantalum thin slice 13C, but in the 5th embodiment, porous sheet metal 13C ' can be removed as the another kind of example of the 4th embodiment.

Promptly as shown in figure 22, sinter tantalum particle into porous chip 12d, adopt foregoing proper method, will be fixed on the upper surface of chip 12d, adopt then with above-mentioned same quadrat method and make Plane Installation type tantalum solid electrolytic capacitor by the tabular sheet metal 13d that tantalum forms.

Certainly self-evident, in the 4th and the 5th embodiment, also can adopt the method for no tantalum wire shown in Figure 12.

Figure 23～Figure 30 represents the 6th embodiment.

The 6th embodiment such as Figure 23 and shown in Figure 24 at first when tantalum particle being sintered into porous chip 12e, become the part that is of a size of L at the end of this chip 12e tantalum particle seamlessly are consolidated into imporosity part 13e.

This imporosity part 13e is heated to high temperature with methods such as laser radiations partly with the upper part of the chip 12e that sinters into, makes each tantalum particle fusion and the part of the imporosity that is combined into.

Then as shown in figure 25, tantalum wire 14e is fixed on the end face 12e ' of chip 12e, adopt then with the 1st embodiment in Fig. 4 and same quadrat method shown in Figure 5, form tantalum pentoxide dielectric film 15 after, form manganese dioxide solid electrolyte layer 16 again.

When forming this manganese dioxide solid electrolyte layer 16, really can stop manganese nitrate aqueous solution B to be impregnated among the imporosity part 13e on the chip 12e, therefore just can reliably each tantalum particle among the imporosity part 13e and manganese dioxide solid electrolyte layer 16 be done non-conductive isolation (insulation).

Below as shown in figure 26, identical with the 1st kind of above-mentioned situation, on all outer surfaces except that imporosity part 13e on the chip 12e, form silverskin 17e in graphite film (not shown) outside, with methods such as cutting off or peel off tantalum wire 14e is removed simultaneously, make capacitor element 11e, then as Figure 27 and shown in Figure 28, employing scolding tin etc. is welded into metal level cathode terminal film 18e (also can only be welded into this cathode terminal film 18e on the bottom surface of capacitor element 11e) on the surface of the silverskin 17e on the capacitor element 11e, on the other hand, end face 12e ' to chip 12e carries out attrition process, and each tantalum particle among the chip 12e is exposed on this end face 12e '.Through after this Surface Machining, this end face is carried out substrate surface to be handled, the solderability of raising nickel coating etc., be welded into metal level anode terminal film 19e with scolding tin etc., then as Figure 29 and shown in Figure 30, on the outer surface of capacitor element 11e, form on the part of the cathode terminal film 18e on its bottom surface and other parts the anode terminal film 19e by thermal endurance synthetic resin or glass constitute by overlay film 20, so make Plane Installation type tantalum solid electrolytic capacitor finished product.

Self-evident, in the 6th embodiment 6, also can exempt to adopt no tantalum wire method shown in Figure 12 certainly.

In addition, each above-mentioned embodiment is the situation of making tantalum solid electrolytic capacitor, but the invention is not restricted to this, also can be applicable to other solid electrolytic capacitors such as aluminium matter solid electrolytic capacitor certainly.

Claims (9)

1. method of making solid electrolytic capacitor may further comprise the steps:

Prepare a porous chip by the metallic particles sintering;

One dielectric of formation on the whole at the sintering chip;

Form a solid electrolyte on the sintering chip neutralizes it, solid electrolyte is by dielectric and metallic particles electric insulation;

Forming an anode tap sublayer is electrically connected with metallic particles;

Forming a cathode terminal sublayer is electrically connected with solid electrolyte;

Before forming dielectric, in terminal part of end formation of sintering chip, this terminal part is positioned near the anode tap sublayer and has retention device and is used to prevent that solid electrolyte from entering this terminal part when forming solid electrolyte; And

The step that it is characterized in that forming dielectric and solid electrolyte is to utilize the wire that is fixed on described terminal part to carry out, and removes wire before forming the anode tap sublayer.

2. according to the method for claim 1, it is characterized in that on the outer surface of the capacitor element that forms by above-mentioned steps, the part of the cathode terminal film on its bottom surface and above-mentioned anode terminal film on other parts formation thermal endurance synthetic resin or glass by overlay film.

3. according to the method for claim 1 or 2, it is characterized in that described terminal part is that a end by sintering chip itself provides, a described end of sintering chip is made into non-porous, with as retention device.

4. according to the method for claim 3, a described end that it is characterized in that the sintering chip is by immersing megohmite insulant at a described end of sintering chip, and makes non-porous.

5. according to the method for claim 4, it is characterized in that megohmite insulant is to select from the group that comprises thermal endurance synthetic resin and glass.

6. according to the method for claim 3, a described end that it is characterized in that the sintering chip is to make non-porous by eliminating in the described end space between the metallic particles.

7. according to the method for claim 6, a described end that it is characterized in that the sintering chip is by making the metallic particles hot melt in the described end non-porous.

8. according to the method for claim 1 or 2, it is characterized in that retention device is to make by a described end that a non-porous metallic plate is installed on the sintering chip.

9. method according to Claim 8 is characterized in that the terminal part comprises that a porous section by the metallic particles sintering is installed on the surface away from the sintering chip of non-porous metallic plate.

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