CN108538710B - Etching equipment and etching method - Google Patents
Etching equipment and etching method Download PDFInfo
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- CN108538710B CN108538710B CN201810299364.2A CN201810299364A CN108538710B CN 108538710 B CN108538710 B CN 108538710B CN 201810299364 A CN201810299364 A CN 201810299364A CN 108538710 B CN108538710 B CN 108538710B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
The invention discloses etching equipment, wherein a metal layer and a mask layer with hollow patterns are sequentially covered on the upper surface of a substrate, the etching equipment comprises an etching groove, a pressurizing device and a first spraying device, and the first spraying device is suspended above the etching groove and is used for spraying etching liquid added with charged particles on the metal layer through the hollow patterns of the mask layer; the pressurizing device is arranged beside the substrate in the etching groove and used for intermittently applying voltage to the metal layer, and the voltage polarity of the metal layer is opposite to that of the charged particles. According to the invention, by adding the charged high molecular pigment or resin colloid particles into the etching liquid, the charged particles move towards the electrode when an electric field is applied, so that the charged particles are adsorbed on the side wall of the etched groove, the wet etching lateral etching can be improved, and the purpose of etching the vertical taper angle by using a wet etching method is realized.
Description
Technical Field
The invention relates to the technical field of substrate etching, in particular to etching equipment and an etching method.
Background
With the rapid development of the fields of aviation, aerospace, military industry, X-ray spectroscopy, astrophysics and the like, submicron-period metal self-supporting transmission gratings become more and more important. The nano-imprinting technology is a high-efficiency, low-cost and rapid nano-pattern transfer technology, successfully obtains nano-patterns below 5nm, and has wide application prospect in the aspect of manufacturing of sub-wavelength micro devices.
The grating manufactured based on nano-imprinting can be as small as the grating period which can not be achieved by general photoetching, namely, the first-level grating which can not be achieved by general photoetching can be obtained by utilizing nano-imprinting. However, the etching of the imprinted grating is an important step in the grating manufacture, and the correct etching method can ensure the depth, the shape and the like of the grating.
The fabrication of nanoimprinted metal gratings requires that lateral etching be guaranteed to be as small as possible to maintain a high degree of vertical etching. Although the chemical wet etching technique has been applied to pattern transfer of various semiconductor materials for a long time, the general wet etching method for etching gratings has poor uniformity in a large area, poor yield and repeatability, limited grating depth, and is easy to cause lateral etching on metal gratings to form non-vertical taper angles (angles of etched sidewalls). In order to overcome the defects of wet etching, the dry etching process adopted in recent years improves the manufacturing yield and device performance of the laser, however, a mask and an etched material are etched simultaneously in the physical dry etching process, the taper angle of a formed metal grating is also the inclined angle of a flaring, the etching precision of a pattern cannot be ensured, and the etching method has the conditions of low etching rate and a large amount of deposits in an etching groove.
Disclosure of Invention
In view of the defects in the prior art, the invention provides etching equipment and an etching method, which can ensure the etching rate, effectively improve the lateral etching, etch a vertical taper angle and ensure the etching precision.
In order to achieve the purpose, the invention adopts the following technical scheme:
an etching device is characterized in that a metal layer and a mask layer with hollowed-out patterns are sequentially covered on the upper surface of a substrate, the etching device comprises an etching groove, a pressurizing device and a first spraying device, the first spraying device is suspended above the etching groove and used for spraying etching liquid added with charged particles on the metal layer through the hollowed-out patterns of the mask layer; the pressurizing device is arranged beside the substrate in the etching groove and used for intermittently applying voltage to the metal layer, and the voltage polarity of the metal layer is opposite to that of the charged particles.
In one embodiment, the charged particles are polymer pigments or resin colloidal particles.
As an embodiment, the pressurizing device includes a pulse power supply, two electrode cantilevers respectively led out from the pulse power supply, and a positive electrode probe and a negative electrode probe respectively fixed on the two different electrode cantilevers, and during the etching process, the positive electrode probe or the negative electrode probe is in contact with the metal layer.
As one embodiment, the positive electrode probe and the negative electrode probe are arranged at intervals in the longitudinal direction, and in the etching process, one of the positive electrode probe and the negative electrode probe is in contact with the upper surface of the metal layer, and the other one of the positive electrode probe and the negative electrode probe is in contact with the lower surface of the substrate; after the metal layer is etched, the positive electrode probe and the negative electrode probe are separated from each other in the longitudinal direction so as to be spaced from the corresponding metal layer and the corresponding substrate respectively.
In one embodiment, the positive electrode probe is in contact with the upper surface of the metal layer, and the charged particles are hydroxide anion pigment or resin; or, the negative electrode probe is in contact with the upper surface of the metal layer, and the charged particles are amino positive ion pigment or resin.
As one embodiment, the etching apparatus further includes a first conveying device and a second conveying device disposed in the etching groove, the first conveying device is configured to convey the substrate along a length direction of the etching groove, and the second conveying device is configured to convey the positive electrode probe and the negative electrode probe along or away from a conveying direction of the substrate.
Another object of the present invention is to provide an etching method, including:
adding charged particles to the etching solution;
injecting etching liquid into the mask layer with the pattern, and performing primary etching on the metal layer at the bottom of the mask layer;
applying a voltage to the metal layer to form an electrophoresis device, so that charged particles are gathered and adsorbed on the side wall and the bottom of each groove formed on the metal layer;
after voltage is applied to the metal layer for a period of time, the voltage applied to the metal layer is removed, and etching liquid is sprayed into each groove;
and after the voltage applied to the metal layer is removed for a period of time, re-applying the voltage to the metal layer for a period of time, and repeating the process until the etching of the metal layer is finished.
In one embodiment, the charged particles are polymer pigments or resin colloidal particles.
As one embodiment, during the etching process, a positive probe or a negative probe of a pulse power supply is in electrical contact with the metal layer; and after the metal layer is etched, the positive probe or the negative probe is disconnected with the metal layer.
As one embodiment, the etching method further includes: in the etching process, the metal layer is transmitted in an etching groove, and the anode probe and the cathode probe respectively move synchronously with the metal layer; and after the metal layer is etched, the anode probe and the cathode probe move to initial positions.
According to the invention, by adding the charged high molecular pigment or resin colloid particles into the etching liquid, the charged particles move towards the electrode when an electric field is applied, so that the charged particles are adsorbed on the side wall of the etched groove, the wet etching lateral etching can be improved, and the purpose of etching the vertical taper angle by using a wet etching method is realized.
Drawings
FIG. 1 is a schematic diagram of a metal layer etching process in an ideal state;
FIG. 2 is a schematic structural diagram of an etching apparatus according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating the arrangement of charged particles in a metal layer under pressure according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating the arrangement of charged particles in a metal layer after spraying in the non-pressurized state according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an implementation of an etching apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a pressurizing device according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a pulse voltage signal of the pressurization device according to the embodiment of the present invention;
fig. 8 is a schematic diagram of an etching method according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 and 2, generally, the upper surface of the substrate 1 at the bottom layer is sequentially covered with a metal layer 2 and a mask layer 3 with a hollow pattern, and when etching is performed, it is necessary to first etch a pattern penetrating to the substrate 1 on the metal layer 2, which is identical to the pattern of the mask layer 3. The mask layer 3 serves as a function of protecting the metal layer 2, so that the region which is not required to be etched on the metal layer 2 is prevented from being corroded by etching liquid, and the metal layer 2 is used as a grating after a pattern which is consistent with the pattern of the mask layer 3 is formed on the metal layer.
In order to avoid serious lateral etching of the metal layer 2 in the etching process and ensure a vertical taper angle, the etching equipment of the embodiment of the invention comprises an etching groove 10, a pressurizing device 20, a first spraying device 30 and a second spraying device 30', wherein the etching groove 10 is in a long groove structure and is made of corrosion-resistant materials, and the inside of the etching groove can be used for placing the substrate 1 and containing etching liquid. The first spraying device 30 and the second spraying device 30 'are provided with a plurality of spray heads, the first spraying device 30 is suspended above the etching groove 10 and used for spraying the etching liquid added with the charged particles to the metal layer 2 through the hollow patterns of the mask layer 3, and the second spraying device 30' is fixed at the bottom of the etching groove 10 and used for spraying the etching liquid towards the bottom surface of the substrate 1 so as to wash away the charged particles K adsorbed on the bottom surface of the substrate 1; the pressurizing device 20 is provided near the substrate 1 in the etching bath 10, and intermittently applies a voltage to the metal layer 2, wherein the polarity of the voltage applied to the metal layer 2 is opposite to the polarity of the charged particles. Preferably, the charged particles K are polymeric pigments or resin colloidal particles, such as amino positive ion or hydroxyl negative ion pigments or resins (e.g., polyacrylamide), which have strong adsorption force on the metal surface.
As shown in fig. 3 and fig. 4, the present embodiment is exemplified by taking the charged particles as negative charges, and it can be understood that when the charged particles are positively charged, a person skilled in the art can make a simple adjustment according to the present embodiment to achieve the technical effect of the present invention. Firstly, etching liquid penetrates through a mask layer 3 to corrode a part of a metal layer 2, so that a groove with a certain depth is formed in an area where the metal layer 2 is located and is opposite to a pattern of the mask layer 3, then, voltage is applied to the metal layer 2, the metal layer 2 is used as a positive electrode, and charged particles K with negative electricity are gathered towards the surface of the metal layer 2 due to the electrophoresis phenomenon of the charged particles in an electric field, so that the charged particles K are adsorbed on the surfaces of the inner wall and the bottom wall of each groove of the metal layer 2, and the further progress of an; then, the voltage on the metal layer 2 is removed, the electrophoresis effect disappears, but the charged particles K are adsorbed on the surface of the groove of the metal layer 2 by virtue of van der waals force, at this time, as the etching liquid sprayed by the spray head of the first spraying device 30 impacts each groove of the metal layer 2, the charged particles K on the bottom surface of the groove are washed away and peeled off, but the charged particles K on the side surface of the groove still keep an adsorption state, and the etching can be continuously and vertically carried out, so that the transverse etching is avoided, the voltage is alternately applied to the metal layer 2 and removed, and the etching process can be carried out in a direction basically vertical to the metal layer 2 by matching with the spraying pressure until the groove penetrates to the surface of the substrate 1.
Referring to fig. 2, 5 and 6, the pressurizing device 20 includes a pulse power source 21, two electrode cantilevers 22 respectively led out from the pulse power source 21, and a positive electrode probe 23 and a negative electrode probe 24 respectively fixed on the two different electrode cantilevers 22, wherein the positive electrode probe 23 is in contact with the metal layer 2 during the etching process.
The positive probes 23 and the negative probes 24 are arranged at intervals in the longitudinal direction, in the etching process, the positive probes 23 are in contact with the upper surface of the metal layer 2, and the negative probes 24 are in contact with the lower surface of the substrate 1; after the metal layer 2 is etched, the positive probe 23 and the negative probe 24 are longitudinally spaced apart from each other to be spaced apart from the corresponding metal layer 2 and the substrate 1, respectively. When the charged particles K are negatively charged, the positive electrode probe 23 is in contact with the upper surface of the metal layer 2; when the charged particles K are positively charged, the negative electrode probe 24 is in contact with the upper surface of the metal layer 2.
Further, the etching apparatus further has a first transfer device 40 and a second transfer device 50 provided in the etching bath 10, the first transfer device 40 being configured to transfer the substrate 1 in a longitudinal direction of the etching bath 10, and the second transfer device 50 being configured to transfer the positive electrode probe 23 and the negative electrode probe 24 in or away from the transfer direction of the substrate 1.
During the etching of one substrate, the second conveyor 50 moves in the same and synchronous direction along the first conveyor 40; after the etching of the substrate is completed, the two electrode cantilevers 22 are opened, so that the positive probe 23 and the negative probe 24 are far away from each other and are separated from the contact with the substrate and the metal layer, and then the second conveying device 50 conveys the positive probe 23 and the negative probe 24 against the conveying direction of the first conveying device 40, so that the positive probe 23 and the negative probe 24 return to the initial positions to prepare for continuing the etching of the next substrate.
The first conveying device 40 generally adopts conveying rollers, and the second conveying device 50 adopts conveying tracks, preferably two conveying tracks are respectively arranged at two sides of the width direction of the etching groove 10, and respectively control the motion state of the two pairs of positive probes 23 and negative probes 24. In order to ensure the use performance of the equipment, the transmission crawler belt, the anode probe 23 and the cathode probe 24 are coated by polytetrafluoroethylene or other acid and alkali resistant materials. The needle heads of the anode probe 23 and the cathode probe 24 are designed to be smooth arc surfaces, the diameters of the needle heads are 0.1mm-2mm, and the distance between the probe heads and the end surface of the substrate is preferably 2mm-5 mm. The height from the upper and lower surfaces of the substrate at the initial position (i.e., in a non-contact state) is 1mm to 5 mm. When the substrate 1 is detected to enter the etching bath 10, the upper and lower probes are clamped to contact the upper and lower surfaces of the substrate correspondingly.
The electrode cantilever 22 functions as a circuit supporting medium and is made of a metal or alloy having a certain strength and toughness, such as carbon steel, chrome steel, nickel steel, etc. In the pressurizing device 20, in consideration of the strong corrosiveness of the etching solution, the contact parts of the positive electrode probe 23 and the negative electrode probe 24 with the substrate and the metal layer are sealed by polytetrafluoroethylene materials except for inert metals (such as Pt, Au and the like).
Referring to fig. 7, the pulse power source 21 employs square wave pulses, the voltage of which can be in the range of 0.5V to 10V, and the voltage is properly adjusted according to the actual etching rate and other conditions on the premise that the deposition potential or gas evolution potential of the etching system is not exceeded.
As shown in fig. 8, correspondingly, the present invention further provides an etching method, which mainly includes:
adding charged particles to the etching solution;
injecting etching liquid into the mask layer with the pattern, and performing primary etching on the metal layer at the bottom of the mask layer;
applying a voltage to the metal layer to form an electrophoresis device, so that charged particles are gathered and adsorbed on the side wall and the bottom of each groove formed on the metal layer;
after applying a voltage to the metal layer for a period of time (e.g., t1 in fig. 7), removing the voltage applied to the metal layer, spraying an etching solution into each groove, and stripping off the charged particles at the bottom of the groove to continue etching;
after the voltage applied to the metal layer is removed for a certain period of time (e.g., t2 in fig. 7), the voltage is again applied to the metal layer for a certain period of time, and the process is repeated until the etching of the metal layer is completed, i.e., the initial voltage of the pulse power supply is 0.
In one embodiment, the charged particles are polymer pigments or resin colloidal particles. In the etching process, a positive probe or a negative probe of a pulse power supply is in electrical contact with the metal layer, namely, when the charged particles are positively charged, the negative probe of the pulse power supply is in electrical contact with the metal layer, and when the charged particles are negatively charged, the positive probe of the pulse power supply is in electrical contact with the metal layer, so that the charged particles are ensured to be adsorbed on the surface of the metal layer; and after the metal layer is etched, the positive probe or the negative probe is disconnected with the metal layer. After the voltage applied to the metal layer is removed, the etching liquid is sprayed toward the bottom surface of the substrate 1 by the second spraying device 30' to wash away the charged particles K adsorbed on the bottom surface of the substrate 1.
In the etching process, the metal layer 2 can be transmitted along with the substrate 1 in the etching groove by using the first transmission device 40, and the positive probe 23 and the negative probe 24 respectively move synchronously with the metal layer 2; after the metal layer 2 is etched, the positive probe 23 and the negative probe 24 do not contact the corresponding metal layer and the corresponding substrate any more, and accelerate the reverse movement to the initial position under the transmission of the second conveying device 50 for the next etching action.
In summary, the invention adds the charged high molecular pigment or resin colloid particles into the etching solution, when an electric field is applied, the charged particles move towards the metal layer, under the impact of the spraying pressure, the charged particles at the bottom of the etching groove of the metal layer are peeled off, but the charged particles are still adsorbed on the side wall, so that the lateral etching can be prevented, the vertical downward etching direction is ensured, the wet etching lateral etching is improved, and the purpose of etching the vertical taper angle by using the wet etching is realized.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (10)
1. The etching equipment is characterized in that a metal layer (2) and a mask layer (3) with hollowed-out patterns are sequentially covered on the upper surface of a substrate (1), the etching equipment comprises an etching groove (10), a pressurizing device (20) and a first spraying device (30), and the first spraying device (30) is suspended above the etching groove (10) and used for spraying etching liquid added with charged particles on the metal layer (2) through the hollowed-out patterns of the mask layer (3); the pressurizing device (20) is arranged beside the substrate (1) in the etching groove (10) and used for intermittently applying voltage to the metal layer (2), and the voltage polarity of the metal layer (2) is opposite to that of the charged particles.
2. The etching apparatus according to claim 1, wherein the charged particles are polymer pigments or resin colloidal particles.
3. Etching apparatus according to claim 1, characterized in that the pressurizing means (20) comprises a pulse power supply (21), two electrode cantilevers (22) respectively leading from the pulse power supply (21), and a positive probe (23) and a negative probe (24) respectively fixed on two different electrode cantilevers (22), wherein the positive probe (23) or the negative probe (24) is in contact with the metal layer (2) during etching.
4. Etching apparatus according to claim 3, wherein the positive probe (23) and the negative probe (24) are arranged at intervals in the longitudinal direction, and during etching, one of the positive probe (23) and the negative probe (24) is in contact with the upper surface of the metal layer (2), and the other is in contact with the lower surface of the substrate (1); after the metal layer (2) is etched, the positive probe (23) and the negative probe (24) are longitudinally far away from each other so as to be respectively spaced from the corresponding metal layer (2) and the corresponding substrate (1).
5. Etching apparatus according to claim 4, wherein the positive electrode probe (23) is in contact with the upper surface of the metal layer (2), and the charged particles are hydroxide anion pigment or resin; or the negative electrode probe (24) is in contact with the upper surface of the metal layer (2), and the charged particles are amino positive ion pigment or resin.
6. Etching apparatus according to any one of claims 3 to 5, further comprising a first conveyor (40) and a second conveyor (50) arranged in the etching tank (10), wherein the first conveyor (40) is configured to convey the substrate (1) along a length direction of the etching tank (10), and the second conveyor (50) is configured to convey the positive probe (23) and the negative probe (24) along or away from a conveying direction of the substrate (1).
7. An etching method, comprising:
adding charged particles to the etching solution;
injecting etching liquid into the mask layer with the pattern, and performing primary etching on the metal layer at the bottom of the mask layer;
applying voltage to the metal layer to form an electrophoresis phenomenon of charged particles, so that the charged particles are gathered and adsorbed on the side wall and the bottom of each groove formed on the metal layer;
after voltage is applied to the metal layer for a period of time, the voltage applied to the metal layer is removed, etching liquid is sprayed into each groove, the etching liquid impacts each groove of the metal layer, charged particles on the bottom surface of each groove are washed away and peeled off, and the charged particles on the side surfaces of the grooves are still in an adsorption state;
and after the voltage applied to the metal layer is removed for a period of time, re-applying the voltage to the metal layer for a period of time, and repeating the process until the etching of the metal layer is finished.
8. The etching method according to claim 7, wherein the charged particles are polymer pigments or resin colloidal particles.
9. The etching method according to claim 7, wherein a positive electrode probe or a negative electrode probe of a pulse power supply is in electrical contact with the metal layer during etching; and after the metal layer is etched, the positive probe or the negative probe is disconnected with the metal layer.
10. The etching method according to claim 9, further comprising: in the etching process, the metal layer is transmitted in an etching groove, and the anode probe and the cathode probe respectively move synchronously with the metal layer; and after the metal layer is etched, the anode probe and the cathode probe move to initial positions.
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| CN201810299364.2A CN108538710B (en) | 2018-04-04 | 2018-04-04 | Etching equipment and etching method |
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| CN201810299364.2A CN108538710B (en) | 2018-04-04 | 2018-04-04 | Etching equipment and etching method |
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| US11107707B2 (en) * | 2018-11-26 | 2021-08-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet etch apparatus and method of using the same |
| CN109846371A (en) * | 2019-03-22 | 2019-06-07 | 黄德昶 | The manufacturing method of non-stick pan tool |
| CN110106504B (en) * | 2019-04-04 | 2021-03-23 | Tcl华星光电技术有限公司 | Etching equipment |
| CN110993614B (en) * | 2019-11-27 | 2022-06-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel manufacturing apparatus and method |
| KR102729514B1 (en) * | 2022-12-27 | 2024-11-14 | 김용석 | Method for anisotropic etching and etching apparatus used in the same |
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