[go: up one dir, main page]

CN108511576A - Light-emitting diode encapsulation structure - Google Patents

Light-emitting diode encapsulation structure Download PDF

Info

Publication number
CN108511576A
CN108511576A CN201710107172.2A CN201710107172A CN108511576A CN 108511576 A CN108511576 A CN 108511576A CN 201710107172 A CN201710107172 A CN 201710107172A CN 108511576 A CN108511576 A CN 108511576A
Authority
CN
China
Prior art keywords
base
emitting diode
electrode
light
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710107172.2A
Other languages
Chinese (zh)
Inventor
林厚德
曾文良
陈隆欣
陈滨全
张超雄
林新强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN201710107172.2A priority Critical patent/CN108511576A/en
Priority to TW106115554A priority patent/TWI633685B/en
Publication of CN108511576A publication Critical patent/CN108511576A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses

Landscapes

  • Led Device Packages (AREA)

Abstract

A kind of light-emitting diode encapsulation structure, it includes a pedestal and an at least light-emitting diode chip for backlight unit, pedestal is more than the length of the second direction along vertical first direction along the length of first direction, a host cavity is formed on pedestal, host cavity penetrates through the both ends of the top and pedestal of pedestal on first direction, host cavity has a positive opening at the top of pedestal, lateral openings are respectively provided at the both ends on first direction of pedestal, the light that light-emitting diode chip for backlight unit is sent out is projected by the positive opening and lateral openings of pedestal.

Description

发光二极管封装结构Light-emitting diode packaging structure

技术领域technical field

本发明涉及一种发光二极管封装结构。The invention relates to a light emitting diode packaging structure.

背景技术Background technique

相比于传统的发光源,发光二极管(Light Emitting Diode,LED)具有重量轻、体积小、污染低、寿命长等优点,其作为一种新型的发光源,已经被越来越广泛地应用。Compared with traditional light sources, light emitting diodes (Light Emitting Diode, LED) have the advantages of light weight, small size, low pollution, long life, etc. As a new type of light source, they have been more and more widely used.

传统的发光二极管封装结构产生的光场形状大多为圆形,但是在某些照明场合下,常常需要长条形的光场,例如道路照明,若路灯的光场为圆形,则一部分光线会照出道路范围之外,不但造成资源浪费还可能形成错误交通引导,如此,则要求路灯所形成的照明区域大致呈长条形为佳,在沿道路的方向上具有较大的照明长度,而在垂直于道路的方向上具有较小的照明长度。但是普通的长条形照明装置,光线会沿平行于发光二极管电极方向散射,导致聚光度不够。所以说如何提供一种具有良好聚光度光场的发光二极管封装结构,成为业内人士需要解决的技术问题。The shape of the light field produced by the traditional LED packaging structure is mostly circular, but in some lighting occasions, a long light field is often required, such as road lighting. If the light field of the street lamp is circular, part of the light will be Illuminating outside the range of the road will not only cause waste of resources but also may cause wrong traffic guidance. In this case, it is better to require the lighting area formed by the street lamp to be roughly elongated, with a larger lighting length in the direction along the road, and Has a smaller lighting length in the direction perpendicular to the road. However, in a common strip lighting device, the light will scatter along the direction parallel to the electrodes of the light emitting diodes, resulting in insufficient concentration. Therefore, how to provide a light-emitting diode packaging structure with a good concentration light field has become a technical problem to be solved by people in the industry.

发明内容Contents of the invention

有鉴于此,有必要提供一种具有好聚光度长条形光场形状的发光二极管封装结构。In view of this, it is necessary to provide a light-emitting diode packaging structure with a strip-shaped light field shape with good concentration.

一种发光二极管封装结构,其包括一基座以及至少一发光二极管芯片,所述基座沿第一方向的长度大于沿垂直第一方向的第二方向的长度,所述基座上形成一收容腔,所述收容腔贯通基座的顶部以及基座沿第一方向上的两端,收容腔在基座的顶部具有一正向开口,在基座的沿第一方向上的两端分别具有侧向开口,所述基座包括一绝缘部,所述绝缘部包括长方形的底座、由所述底座第一方向的侧边垂直向上延伸的两个第一侧壁以及由所述底座第二方向的侧边垂直向上延伸的两个第二侧壁,所述两个第一侧壁平行相对,所述两个第二侧壁平行相对,所述两个第一侧壁、两个第二侧壁与底座共同围成所述收容腔,所述第一侧壁的高度大于所述第二侧壁的高度,所述发光二极管芯片设置于所述收容腔中,发光二极管芯片发出的光线通过基座的正向开口以及侧向开口射出。A light-emitting diode packaging structure, which includes a base and at least one light-emitting diode chip, the length of the base along the first direction is greater than the length along the second direction perpendicular to the first direction, and a housing is formed on the base cavity, the accommodating cavity runs through the top of the base and the two ends of the base along the first direction, the accommodating cavity has a positive opening on the top of the base, and the two ends of the base along the first direction respectively have The base has a side opening, the base includes an insulating part, and the insulating part includes a rectangular base, two first side walls extending vertically upward from the side of the base in the first direction, and extending vertically upward from the side of the base in the second direction. Two second side walls extending vertically upwards from the sides of the two first side walls, the two first side walls are parallel to each other, the two second side walls are parallel to each other, the two first side walls, the two second side walls The wall and the base together form the storage cavity, the height of the first side wall is greater than the height of the second side wall, the light emitting diode chip is arranged in the storage cavity, and the light emitted by the light emitting diode chip passes through the base The front opening and the side opening of the seat are ejected.

进一步地,所述基座包括一设置于所述绝缘座上的第一电极构造和第二电极构造。Further, the base includes a first electrode structure and a second electrode structure disposed on the insulating base.

更进一步地,所述绝缘座呈一长方体结构,所述长方体结构的长边沿第一方向延伸,短边沿第二方向延伸。Furthermore, the insulating base is a cuboid structure, the long side of the cuboid structure extends along the first direction, and the short side extends along the second direction.

进一步地,所述发光二极管芯片的高度小于所述第二侧壁的高度。Further, the height of the LED chip is smaller than the height of the second side wall.

更进一步地,所述第一电极构造包括第一内部电极、第一延伸电极以及第一外部电极,所述第二电极构造包括第二内部电极、第二延伸电极以及第二外部电极,所述第一内部电极与第二内部电极相互间隔设置于所述收容腔中的绝缘座的侧壁上,所述第一延伸电极以及第二延伸电极分别设置在绝缘座的底座的侧面上,并分别通过所述底座与第一内部电极以及第二内部电极电连接,所述第一外部电极以及第二外部电极分别由第一延伸电极以及第二延伸电极延伸至绝缘座的侧壁上。Furthermore, the first electrode structure includes a first internal electrode, a first extension electrode and a first external electrode, the second electrode structure includes a second internal electrode, a second extension electrode and a second external electrode, the The first internal electrode and the second internal electrode are arranged at intervals on the side wall of the insulating seat in the accommodating cavity, and the first extension electrode and the second extension electrode are respectively arranged on the side surfaces of the base of the insulating seat, and respectively The base is electrically connected to the first internal electrode and the second internal electrode, and the first external electrode and the second external electrode respectively extend from the first extension electrode and the second extension electrode to the side wall of the insulating seat.

更进一步地,所述发光二极管芯片设置于所述基座的收容腔内并分别电性连接第一内部电极与第二内部电极。Furthermore, the light emitting diode chip is disposed in the receiving cavity of the base and electrically connected to the first internal electrode and the second internal electrode respectively.

进一步地,所述发光二极管封装结构还包括一封装层,所述封装层填充于所述基座的整个收容腔内,并覆盖所述发光二极管芯片。Further, the LED packaging structure further includes a packaging layer, the packaging layer fills the entire cavity of the base and covers the LED chip.

进一步地,所述封装层内包含荧光粉。Further, phosphor powder is contained in the encapsulation layer.

更进一步地,所述封装层的顶面由所述收容腔的正向开口露出,并与所述两个第一侧壁的顶面齐平;所述封装层的侧面与所述两个第二侧壁的侧面相齐平;部分所述封装层的侧面分别由所述收容腔的侧向开口露出,并分别与所述两个第二侧壁的外侧端面齐平。Furthermore, the top surface of the encapsulation layer is exposed from the front opening of the accommodating cavity, and is flush with the top surfaces of the two first side walls; The side surfaces of the two side walls are flush with each other; the side surfaces of part of the encapsulation layer are respectively exposed from the side openings of the receiving cavity, and are respectively flush with the outer end surfaces of the two second side walls.

上述的发光二极管封装结构中,基座上形成收容腔,所述收容腔在基座的顶部具有一正向开口,在基座的沿第一方向上的两端分别具有侧向开口,发光二极管芯片设置于基座的收容腔中,其发出的光线由基座的正向开口以及基座的沿第一方向的两侧的侧向开口射出,所述两个第一侧壁、两个第二侧壁与底座共同围成所述收容腔,所述第一侧壁的高度大于所述第二侧壁的高度,由于第一侧壁的高度大于第二侧壁的高度,使得发光二极管封装结构的发光二极管芯片光束可轻易自所述第二侧壁方向射出而增加广角发光的特性,同时第二侧壁也可将部分射至所述第二侧壁内侧的光束反射且集中自正向开口方向射出,借以维持所述发光二极管封装结构的光强度。In the above light emitting diode packaging structure, a receiving cavity is formed on the base, the receiving cavity has a positive opening at the top of the base, and side openings are respectively provided at both ends of the base along the first direction, and the light emitting diode The chip is arranged in the accommodation cavity of the base, and the light emitted by it is emitted from the front opening of the base and the side openings on both sides of the base along the first direction, the two first side walls, the two second The two side walls and the base jointly define the receiving cavity, and the height of the first side wall is greater than the height of the second side wall. Since the height of the first side wall is greater than the height of the second side wall, the LED package The structure of light emitting diode chip light beam can be easily emitted from the direction of the second side wall to increase the characteristics of wide-angle light emission, and at the same time, the second side wall can also reflect and concentrate part of the light beam emitted to the inner side of the second side wall from the front direction. The light emits from the direction of the opening so as to maintain the light intensity of the LED packaging structure.

附图说明Description of drawings

图1为本发明实施方式中的发光二极管封装结构的立体图。FIG. 1 is a perspective view of a light emitting diode package structure in an embodiment of the present invention.

图2为图1中的发光二极管封装结构的俯视图。FIG. 2 is a top view of the LED package structure in FIG. 1 .

图3为图1中的发光二极管封装结构的仰视图。FIG. 3 is a bottom view of the LED package structure in FIG. 1 .

图4为图1中的发光二极管封装结构的左视图。FIG. 4 is a left side view of the LED package structure in FIG. 1 .

图5为图1中的发光二极管封装结构的右视图。FIG. 5 is a right view of the LED package structure in FIG. 1 .

图6为图1中的发光二极管封装结构的侧视图。FIG. 6 is a side view of the LED package structure in FIG. 1 .

主要元件符号说明Explanation of main component symbols

发光二极管封装结构 100Light-emitting diode packaging structure 100

基座 10Base 10

发光二极管芯片 20LED chip 20

封装层 30encapsulation layer 30

绝缘座 11Insulator 11

第一电极构造 12First electrode configuration 12

第二电极构造 13Second Electrode Configuration 13

收容腔 14Containment chamber 14

底座 111base 111

第一侧壁 112first side wall 112

第二侧壁 114Second side wall 114

第一内部电极 121first inner electrode 121

第一延伸电极 122First extension electrode 122

第一外部电极 123first external electrode 123

第二内部电极 131Second inner electrode 131

第二延伸电极 132Second extension electrode 132

第二外部电极 133Second external electrode 133

正向开口 141Front opening 141

侧向开口 142Side opening 142

如下具体实施方式将结合上述附图进一步说明本发明。The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.

具体实施方式Detailed ways

下面将结合附图,对本发明作进一步的详细说明。The present invention will be further described in detail below in conjunction with the accompanying drawings.

请参阅图1至图6,本发明实施方式提供的一种发光二极管封装结构100包括一基座10、设置于所述基座10内的至少一发光二极管芯片20以及设置于基座10内并覆盖发光二极管芯片20的封装层30。Referring to FIGS. 1 to 6 , a light emitting diode packaging structure 100 provided in an embodiment of the present invention includes a base 10 , at least one light emitting diode chip 20 disposed in the base 10 , and a light emitting diode chip 20 disposed in the base 10 and An encapsulation layer 30 covering the LED chip 20 .

请接着参阅图2,所述基座10包括一绝缘座11以及设置于所述绝缘座11上的第一电极构造12和第二电极构造13。所述绝缘座11呈一长方体结构,其长边沿第一方向X延伸,短边沿第二方向Y延伸。所述绝缘座11包括长方形的底座111、所述底座111的两个长边垂直向上延伸的第一侧壁112以及由所述底座111的两个短边垂直向上延伸的第二侧壁114。两个所述第一侧壁112平行相对,两个所述第二侧壁114平行相对。所述第一侧壁112的高度大于所述第二侧壁114的高度。两个所述第一侧壁112、两个所述第二侧壁114与所述底座111共同围成一收容腔14。请参阅图1,所述收容腔14贯通所述绝缘座11的顶部以及所述绝缘座11沿第一方向X的两端,其具有一位于所述绝缘座11顶部的正向开口141以及分别位于所述绝缘座11的沿第一方向X两端的侧向开口142。Referring to FIG. 2 , the base 10 includes an insulating seat 11 and a first electrode structure 12 and a second electrode structure 13 disposed on the insulating seat 11 . The insulating base 11 is a cuboid structure, its long side extends along the first direction X, and its short side extends along the second direction Y. The insulating base 11 includes a rectangular base 111 , a first side wall 112 extending vertically upward from two long sides of the base 111 , and a second side wall 114 vertically extending upward from two short sides of the base 111 . The two first side walls 112 are parallel to each other, and the two second side walls 114 are parallel to each other. The height of the first sidewall 112 is greater than the height of the second sidewall 114 . The two first side walls 112 , the two second side walls 114 and the base 111 jointly define a receiving cavity 14 . Please refer to FIG. 1 , the accommodating cavity 14 passes through the top of the insulating seat 11 and both ends of the insulating seat 11 along the first direction X, and has a forward opening 141 at the top of the insulating seat 11 and The lateral openings 142 are located at both ends of the insulating base 11 along the first direction X.

请参阅图2至图5,所述第一电极构造12与第二电极构造13相互间隔设置于绝缘座11上。其中,第一电极构造12包括第一内部电极121、第一延伸电极122以及第一外部电极123。同样,第二电极构造13包括第二内部电极131、第二延伸电极132以及第二外部电极133。所述第一内部电极121与第二内部电极131相互间隔设置于收容腔14中的绝缘座11的底座111上,用于与发光二极管芯片20电连接。所述第一延伸电极122以及第二延伸电极132分别设置在绝缘座11的底座111的下表面上,并分别通过所述底座111与第一内部电极121以及第二内部电极131连接。所述第一外部电极123以及第二外部电极133分别由第一延伸电极122以及第二延伸电极132延伸至绝缘座11的第一侧壁112上,以用于与外部电源电连接。Please refer to FIG. 2 to FIG. 5 , the first electrode structure 12 and the second electrode structure 13 are arranged on the insulating base 11 at intervals. Wherein, the first electrode structure 12 includes a first inner electrode 121 , a first extension electrode 122 and a first outer electrode 123 . Likewise, the second electrode structure 13 includes a second inner electrode 131 , a second extension electrode 132 and a second outer electrode 133 . The first internal electrode 121 and the second internal electrode 131 are arranged on the base 111 of the insulating seat 11 in the receiving cavity 14 at intervals from each other, and are used for electrical connection with the LED chip 20 . The first extension electrode 122 and the second extension electrode 132 are respectively disposed on the lower surface of the base 111 of the insulating base 11 , and are respectively connected to the first internal electrode 121 and the second internal electrode 131 through the base 111 . The first external electrode 123 and the second external electrode 133 are respectively extended from the first extension electrode 122 and the second extension electrode 132 to the first side wall 112 of the insulating base 11 for electrical connection with an external power source.

所述发光二极管芯片20设置于基座10的收容腔14内并通过导线分别电性连接第一内部电极121与第二内部电极131。所述发光二极管芯片20的高度小于所述第二侧壁114的高度。The light emitting diode chip 20 is disposed in the receiving cavity 14 of the base 10 and is electrically connected to the first internal electrode 121 and the second internal electrode 131 respectively through wires. The height of the LED chip 20 is smaller than the height of the second sidewall 114 .

所述封装层30填充于基座10的整个收容腔14内,并覆盖所述发光二极管芯片20与所述两个第二侧壁114。所述封装层30的顶面由收容腔14的正向开口141露出,并与所述两个第一侧壁112的顶面齐平;所述封装层30的侧面与所述两个第二侧壁114的侧面相齐平;部分所述封装层30的侧面分别由收容腔14的侧向开口142露出,并分别与两第二侧壁114的外侧端面齐平。所述封装层30为一透明结构,其材质可为硅、环氧树脂等。所述封装层30中还可掺入荧光粉。所述荧光粉材质可选自石榴石(garnet)、硅酸盐、氮化物、氮氧化物、磷化物、硫化物中之一或几种组合的化合物。The encapsulation layer 30 fills the entire cavity 14 of the base 10 and covers the LED chip 20 and the two second sidewalls 114 . The top surface of the encapsulation layer 30 is exposed by the forward opening 141 of the housing cavity 14, and is flush with the top surfaces of the two first side walls 112; The sides of the sidewalls 114 are flush with each other; the side surfaces of part of the encapsulation layer 30 are respectively exposed by the side openings 142 of the receiving cavity 14 and flush with the outer end surfaces of the two second sidewalls 114 respectively. The encapsulation layer 30 is a transparent structure, and its material can be silicon, epoxy resin and the like. Phosphor powder can also be doped into the encapsulation layer 30 . The phosphor material can be selected from one of garnet, silicate, nitride, nitrogen oxide, phosphide, and sulfide, or a combination of several compounds.

请参阅图2及图6,在本发明的发光二极管封装结构100中,所述基座10上形成收容腔14,所述收容腔14在基座10的顶部具有一正向开口141,在基座10的沿第一方向X的两端分别具有侧向开口142,发光二极管芯片20设置于基座10的收容腔14中,其发出的光线由基座10的正向开口141以及基座10的沿第一方向X两侧的侧向开口142射出,由此,可以使得发光二极管芯片20产生的光场在第一方向X上被拉长延伸,如此,可以形成一长条形的光场形状。由于第一侧壁112的高度大于第二侧壁114的高度,使得发光二极管封装结构100的发光二极管芯片20光束可轻易自所述第二侧壁114方向射出而增加广角发光的特性,同时第二侧壁114也可将部分射至所述第二侧壁114内侧的光束反射且集中自正向开口141方向射出,借以维持所述发光二极管封装结构100的光强度。Referring to FIG. 2 and FIG. 6, in the light emitting diode packaging structure 100 of the present invention, a housing cavity 14 is formed on the base 10, and the housing cavity 14 has a forward opening 141 on the top of the base 10. The two ends of the seat 10 along the first direction X have side openings 142 respectively, and the light emitting diode chip 20 is arranged in the receiving cavity 14 of the base 10 , and the light emitted by it is transmitted by the forward opening 141 of the base 10 and the base 10 The side openings 142 on both sides of the first direction X are emitted, so that the light field generated by the light emitting diode chip 20 can be elongated and extended in the first direction X, so that a strip-shaped light field can be formed shape. Since the height of the first side wall 112 is greater than the height of the second side wall 114, the light beam of the light emitting diode chip 20 of the light emitting diode packaging structure 100 can be easily emitted from the direction of the second side wall 114 to increase the wide-angle light emission characteristics, and at the same time, the second side wall The two sidewalls 114 can also reflect part of the light beams incident on the inside of the second sidewalls 114 and concentrate them out from the direction of the opening 141 , so as to maintain the light intensity of the LED package structure 100 .

可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种像应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。It can be understood that, for those skilled in the art, various other corresponding changes and deformations can be made according to the technical concept of the present invention, and all these changes and deformations should belong to the protection scope of the claims of the present invention .

Claims (9)

1.一种发光二极管封装结构,其包括一基座以及至少一发光二极管芯片,其特征在于:所述基座沿第一方向的长度大于沿垂直第一方向的第二方向的长度,所述基座上形成一收容腔,所述收容腔贯通基座的顶部以及基座沿第一方向上的两端,收容腔在基座的顶部具有一正向开口,在基座的沿第一方向上的两端分别具有侧向开口,所述基座包括一绝缘座,所述绝缘座包括长方形的底座、由所述底座第一方向的侧边垂直向上延伸的两个第一侧壁以及由所述底座第二方向的侧边垂直向上延伸的两个第二侧壁,所述两个第一侧壁平行相对,所述两个第二侧壁平行相对,所述两个第一侧壁、两个第二侧壁与底座共同围成所述收容腔,所述第一侧壁的高度大于所述第二侧壁的高度,所述发光二极管芯片设置于所述收容腔中,发光二极管芯片发出的光线通过基座的正向开口以及侧向开口射出。1. A light-emitting diode packaging structure, which includes a base and at least one light-emitting diode chip, characterized in that: the length of the base along the first direction is greater than the length along the second direction perpendicular to the first direction, the A storage cavity is formed on the base, and the storage cavity passes through the top of the base and the two ends of the base along the first direction. The two upward ends respectively have side openings, the base includes an insulating seat, the insulating seat includes a rectangular base, two first side walls extending vertically upward from the side of the base in the first direction, and a Two second side walls extending vertically upwards from the sides of the base in the second direction, the two first side walls are parallel to each other, the two second side walls are parallel to each other, and the two first side walls , the two second side walls and the base jointly enclose the storage cavity, the height of the first side wall is greater than the height of the second side wall, the light-emitting diode chip is arranged in the storage cavity, and the light-emitting diode The light emitted by the chip is emitted through the front opening and the side opening of the base. 2.如权利要求1所述的发光二极管封装结构,其特征在于:所述基座包括一设置于所述绝缘座上的第一电极构造和第二电极构造。2. The light emitting diode packaging structure according to claim 1, wherein the base comprises a first electrode structure and a second electrode structure disposed on the insulating seat. 3.如权利要求2所述的发光二极管封装结构,其特征在于:所述绝缘座呈一长方体结构,所述长方体结构的长边沿第一方向延伸,短边沿第二方向延伸。3 . The light emitting diode package structure according to claim 2 , wherein the insulating seat is a cuboid structure, the long side of the cuboid structure extends along the first direction, and the short side extends along the second direction. 4 . 4.如权利要求1所述的发光二极管封装结构,其特征在于:所述发光二极管芯片的高度小于所述第二侧壁的高度。4. The light emitting diode package structure according to claim 1, wherein the height of the light emitting diode chip is smaller than the height of the second sidewall. 5.如权利要求2所述的发光二极管封装结构,其特征在于:所述第一电极构造包括第一内部电极、第一延伸电极以及第一外部电极,所述第二电极构造包括第二内部电极、第二延伸电极以及第二外部电极,所述第一内部电极与第二内部电极相互间隔设置于所述收容腔中的绝缘座的侧壁上,所述第一延伸电极以及第二延伸电极分别设置在绝缘座的底座的侧面上,并分别通过所述底座与第一内部电极以及第二内部电极电连接,所述第一外部电极以及第二外部电极分别由第一延伸电极以及第二延伸电极延伸至绝缘座的侧壁上。5. The light emitting diode packaging structure according to claim 2, wherein the first electrode structure comprises a first internal electrode, a first extension electrode and a first external electrode, and the second electrode structure comprises a second internal electrode electrode, a second extension electrode, and a second external electrode, the first internal electrode and the second internal electrode are arranged at intervals on the side wall of the insulating seat in the accommodating cavity, the first extension electrode and the second extension electrode The electrodes are respectively arranged on the side surfaces of the base of the insulating seat, and are respectively electrically connected to the first internal electrode and the second internal electrode through the base, and the first external electrode and the second external electrode are respectively composed of the first extension electrode and the second The two extension electrodes extend to the side wall of the insulating seat. 6.如权利要求5所述的发光二极管封装结构,其特征在于:所述发光二极管芯片设置于所述基座的收容腔内并分别电性连接第一内部电极与第二内部电极。6 . The light emitting diode packaging structure according to claim 5 , wherein the light emitting diode chip is disposed in the receiving cavity of the base and electrically connected to the first internal electrode and the second internal electrode respectively. 7 . 7.如权利要求1所述的发光二极管封装结构,其特征在于:所述发光二极管封装结构还包括一封装层,所述封装层填充于所述基座的整个收容腔内,并覆盖所述发光二极管芯片。7. The light emitting diode packaging structure according to claim 1, characterized in that: the light emitting diode packaging structure further comprises a packaging layer, the packaging layer is filled in the entire cavity of the base, and covers the LED chips. 8.如权利要求1所述的发光二极管封装结构,其特征在于:所述封装层内包含荧光粉。8 . The LED packaging structure according to claim 1 , wherein phosphor powder is contained in the packaging layer. 9.如权利要求7所述的发光二极管封装结构,其特征在于:所述封装层的顶面由所述收容腔的正向开口露出,并与所述两个第一侧壁的顶面齐平;所述封装层的侧面与所述两个第二侧壁的侧面相齐平;部分所述封装层的侧面分别由所述收容腔的侧向开口露出,并分别与所述两个第二侧壁的外侧端面齐平。9. The light emitting diode packaging structure according to claim 7, wherein the top surface of the packaging layer is exposed from the front opening of the receiving cavity, and is flush with the top surfaces of the two first side walls flat; the sides of the encapsulation layer are flush with the sides of the two second side walls; part of the sides of the encapsulation layer are respectively exposed by the side openings of the storage cavity, and are respectively connected to the two second side walls The outer end faces of the two side walls are flush.
CN201710107172.2A 2017-02-27 2017-02-27 Light-emitting diode encapsulation structure Pending CN108511576A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201710107172.2A CN108511576A (en) 2017-02-27 2017-02-27 Light-emitting diode encapsulation structure
TW106115554A TWI633685B (en) 2017-02-27 2017-05-11 Light emitting diode package structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710107172.2A CN108511576A (en) 2017-02-27 2017-02-27 Light-emitting diode encapsulation structure

Publications (1)

Publication Number Publication Date
CN108511576A true CN108511576A (en) 2018-09-07

Family

ID=63373922

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710107172.2A Pending CN108511576A (en) 2017-02-27 2017-02-27 Light-emitting diode encapsulation structure

Country Status (2)

Country Link
CN (1) CN108511576A (en)
TW (1) TWI633685B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223082A (en) * 2004-02-04 2005-08-18 Citizen Electronics Co Ltd Light emitting diode chip
CN1971957A (en) * 2005-11-22 2007-05-30 夏普株式会社 Light emitting element, production method thereof, backlight unit having the light emitting element, and production method thereof
CN101355126A (en) * 2007-07-23 2009-01-28 瑞莹光电股份有限公司 Side-emitting light emitting diode package and method of manufacturing the same
CN102456813A (en) * 2010-10-29 2012-05-16 展晶科技(深圳)有限公司 LED (light emitting diode) and manufacturing method thereof
CN103123058A (en) * 2013-01-09 2013-05-29 中微光电子(潍坊)有限公司 Light-emitting diode (LED) light source
CN103398324A (en) * 2013-03-22 2013-11-20 友达光电股份有限公司 Packaging structure of light-emitting element and backlight module comprising same
CN104425675A (en) * 2013-08-26 2015-03-18 展晶科技(深圳)有限公司 Light-emitting diode encapsulation structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525213B2 (en) * 2010-03-30 2013-09-03 Lg Innotek Co., Ltd. Light emitting device having multiple cavities and light unit having the same
CN103050603B (en) * 2011-10-17 2016-03-23 展晶科技(深圳)有限公司 The manufacture method of LED encapsulation structure
CN203312365U (en) * 2013-07-04 2013-11-27 京东方科技集团股份有限公司 LED stand, LED, and backlight module
KR102237155B1 (en) * 2015-03-11 2021-04-07 엘지이노텍 주식회사 Light emitting device and light unit having thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223082A (en) * 2004-02-04 2005-08-18 Citizen Electronics Co Ltd Light emitting diode chip
CN1971957A (en) * 2005-11-22 2007-05-30 夏普株式会社 Light emitting element, production method thereof, backlight unit having the light emitting element, and production method thereof
CN101355126A (en) * 2007-07-23 2009-01-28 瑞莹光电股份有限公司 Side-emitting light emitting diode package and method of manufacturing the same
CN102456813A (en) * 2010-10-29 2012-05-16 展晶科技(深圳)有限公司 LED (light emitting diode) and manufacturing method thereof
CN103123058A (en) * 2013-01-09 2013-05-29 中微光电子(潍坊)有限公司 Light-emitting diode (LED) light source
CN103398324A (en) * 2013-03-22 2013-11-20 友达光电股份有限公司 Packaging structure of light-emitting element and backlight module comprising same
CN104425675A (en) * 2013-08-26 2015-03-18 展晶科技(深圳)有限公司 Light-emitting diode encapsulation structure

Also Published As

Publication number Publication date
TWI633685B (en) 2018-08-21
TW201832379A (en) 2018-09-01

Similar Documents

Publication Publication Date Title
KR102603695B1 (en) Light emitting device and vehicle lamp comprising the same
US9431591B1 (en) LED package with reflecting cup
CN108028303B (en) light-emitting device
EP2492982A2 (en) Light emitting device package
KR102360957B1 (en) Light emitting diode package
CN104752369B (en) Photoelectric cell module
KR101116951B1 (en) Led package
JP2008072043A (en) Optical semiconductor device
CN102867820B (en) Package structure for LED
US20150076541A1 (en) Light-emitting device
CN102254909A (en) Light emitting device package
TWM485515U (en) LED package
TWI633685B (en) Light emitting diode package structure
JP2015510680A5 (en)
TWI531092B (en) Light emitting diode package structure
TWI524501B (en) Light-emitting diode package structure and manufacturing method thereof
KR101337600B1 (en) Lens mount type light emitting diode package
US8633507B2 (en) LED with versatile mounting ways
KR102070980B1 (en) Light emitting device
TWI492424B (en) Light emitting diode package structure
KR102050057B1 (en) Light Emitting Device Package
CN103515519B (en) Light emitting diode and manufacture method thereof
KR101902399B1 (en) Light emitting device
CN110649138B (en) LED lighting unit and LED lighting device
KR20110051176A (en) Lens-Mounted LED Package

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180907