CN108491022A - Power module and working method based on compensation circuit, filter circuit - Google Patents
Power module and working method based on compensation circuit, filter circuit Download PDFInfo
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- CN108491022A CN108491022A CN201810403990.1A CN201810403990A CN108491022A CN 108491022 A CN108491022 A CN 108491022A CN 201810403990 A CN201810403990 A CN 201810403990A CN 108491022 A CN108491022 A CN 108491022A
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- 239000004065 semiconductor Substances 0.000 claims description 287
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The present invention relates to power technique fields, especially a kind of reference voltage circuit and its working method with compensation circuit, filter circuit.The present invention power module include：Rectification circuit, filter circuit, the reference voltage circuit with compensation circuit, the rectification circuit connect filter circuit, and the filter circuit connects reference voltage circuit, the reference voltage circuit connection load；Reference voltage circuit includes start-up circuit and reference voltage generating circuit.The present invention compensates circuit on the basis of traditional benchmark potential circuit, by increase, reduces the temperature coefficient of output voltage, and have higher power supply rejection ratio.The present invention also provides a kind of power module, the AC conversion that can be used for input exports for steady dc voltage.
Description
Technical field
The present invention relates to Analogical Circuit Technique fields, more particularly to the power supply based on compensation circuit, filter circuit
Module and working method.
Background technology
Reference voltage generating circuit is the basic mould in Analog Circuit Design, mixed-signal circuit design and Digital Design
Module unit, its effect are to provide a reference voltage not changed with temperature and supply voltage for system.It is produced in reference voltage
In raw circuit, temperature coefficient（TC, Temperature Coefficient）And power supply rejection ratio（PSRR, Power Supply
Rejection Ratio）The two parameters play conclusive effect, high-precision, low-power consumption, high electricity to the quality of power source performance
Source inhibits most important for entire circuit than, the reference voltage generating circuit of low-temperature coefficient.Traditional band-gap reference
Voltage by two voltages with Positive and Negative Coefficient Temperature by carrying out the reference voltage that linear superposition can be obtained zero-temperature coefficient.
The difference of the base emitter voltage of two double pole triodes is and absolute temperature is proportional to, the base stage-of bipolar transistor
Emitter voltage has negative temperature coefficient property, using both voltages of different nature with obtaining in certain proportion and temperature
Change unrelated reference voltage.Since traditional reference voltage generating circuit only carries out linear compensation, low precision, in temperature range
When changing greatly, the voltage of generation is usually not satisfactory, especially in some require relatively high circuit to voltage accuracy, line
Property compensation after the voltage that generates far can not meet the requirements.Based on this, the present invention provides one kind having higher precision, higher
The low-temperature coefficient reference voltage generating circuit of PSRR.In addition, the present invention also provides a kind of power module, can be used for input
AC conversion exports for steady dc voltage.
Invention content
That the purpose of the present invention is to solve existing reference voltage generating circuit power supply rejection ratio is low, temperature coefficient is big asks
Topic, provide a kind of higher precision, high PSRR and low-temperature coefficient reference voltage circuit and power module.
The present invention provides a kind of reference voltage circuits with compensation circuit, including start-up circuit and reference voltage to generate
Circuit；The start-up circuit includes：12nd metal-oxide-semiconductor M12, the 13rd metal-oxide-semiconductor M13, the 14th metal-oxide-semiconductor M14, the 15th MOS
The pipe capacitance of M15, the 16th metal-oxide-semiconductor M16, second C2, the 17th metal-oxide-semiconductor M17；Wherein, the 17th metal-oxide-semiconductor M17, the 12nd MOS
The source electrode of pipe M12 connects voltage, the grounded-grid of the 17th metal-oxide-semiconductor M17, the drain electrode connection the tenth of the 17th metal-oxide-semiconductor M17
The drain electrode of three metal-oxide-semiconductor M13 and the grid of the 15th metal-oxide-semiconductor M15, the source electrode ground connection of the 13rd metal-oxide-semiconductor M13, the 12nd metal-oxide-semiconductor
The grid of M12 connects first end, the drain electrode of the 15th metal-oxide-semiconductor M15 and the grid of the 16th metal-oxide-semiconductor M16 of the second capacitance C2,
The second end of second capacitance C2 connects voltage, the drain electrode of the 14th metal-oxide-semiconductor M14 of drain electrode connection of the 12nd metal-oxide-semiconductor M12 is simultaneously
The grid of the 14th metal-oxide-semiconductor M14 and the grid of the 13rd metal-oxide-semiconductor M13 are connected, the source electrode of the 14th metal-oxide-semiconductor M14 is grounded, the
The source electrode of 15 metal-oxide-semiconductor M15 is grounded, and the source electrode of the 16th metal-oxide-semiconductor M16 connects voltage, the drain electrode of the 16th metal-oxide-semiconductor M16
Output as start-up circuit.The reference voltage generating circuit includes：First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, third metal-oxide-semiconductor
M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9, the
Ten metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th are electric
Hinder the capacitance of R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, first C1, the first triode Q1, the second triode Q2, the
Three triode Q3；Wherein, the output end of the source electrode connection start-up circuit of the first metal-oxide-semiconductor M1, third metal-oxide-semiconductor M3, the 5th metal-oxide-semiconductor M5
That is the drain electrode of the 16th metal-oxide-semiconductor M16, the drain electrode of the first metal-oxide-semiconductor M1 of grid connection of the first metal-oxide-semiconductor M1, the source of the second metal-oxide-semiconductor M2
The grid of the grid of pole and third metal-oxide-semiconductor M3 and the 5th metal-oxide-semiconductor M5, the second metal-oxide-semiconductor M2 connects the 4th metal-oxide-semiconductor M4, the 6th MOS
The grid of pipe M6, the source electrode of the 4th metal-oxide-semiconductor M4 of drain electrode connection of third metal-oxide-semiconductor M3, the drain electrode connection the 6th of the 5th metal-oxide-semiconductor M5
The source electrode of metal-oxide-semiconductor M6, the first end of the drain electrode connection first resistor R1 of the second metal-oxide-semiconductor M2, the second end ground connection of first resistor R1,
The 7th metal-oxide-semiconductor M7 of drain electrode connection of 4th metal-oxide-semiconductor M4, the source electrode of the 8th metal-oxide-semiconductor M8, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8
Drain electrode is separately connected the drain electrode of the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 source electrode connect
Ground, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 grid be connected and connect the drain electrode of the 9th metal-oxide-semiconductor M9, the grid of the 7th metal-oxide-semiconductor M7
Pole connects the first end of the first end and the 6th resistance R6 of second resistance R2, the second end connection 3rd resistor R3 of second resistance R2
First end and the 4th resistance R4 first end, the second end of 3rd resistor R3 connects the drain electrode and the three or three of the 6th metal-oxide-semiconductor M6
The collector of pole pipe Q3, the second end of the 4th resistance R4 connect the emitter of the grid and the first triode Q1 of the 8th metal-oxide-semiconductor M8,
The collector and base earth of first triode Q1, the base stage and the 7th of the second end connection third transistor Q3 of the 6th resistance R6
The first end of resistance R7, the second end of the 7th resistance R7 connect the emitter of the second triode Q2, the current collection of the second triode Q2
Pole and base earth, the first end of the 8th resistance R8 of emitter connection resistance of third transistor Q3, the 8th resistance R8's of resistance
Second end is grounded, the first end of the drain electrode and the 5th resistance R5 of the 8th metal-oxide-semiconductor M8 of grid connection of the 11st metal-oxide-semiconductor M11, and the 5th
The second end of resistance R5 connects the first end of the first capacitance C1, and the second end of the first capacitance C1 connects the leakage of the 11st metal-oxide-semiconductor M11
The drain electrode of pole and the 6th metal-oxide-semiconductor M6, the source electrode ground connection of the 11st metal-oxide-semiconductor M11, the drain voltage of the 6th metal-oxide-semiconductor M6As
Output voltage.The first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, third metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th
Metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 17th metal-oxide-semiconductor M17, the 12nd metal-oxide-semiconductor M12, the 16th metal-oxide-semiconductor M16
For PMOS tube, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, the 13rd metal-oxide-semiconductor M13, the 14th MOS
Pipe M14, the 15th metal-oxide-semiconductor M15 are NMOS tube.The first triode Q1, the second triode Q2 be PNP pipe, the described 3rd 3
Pole pipe Q3 manages for NPN.
When circuit start, due to the grounded-grid of the 11st metal-oxide-semiconductor M11, be directly connected, therefore the 15th metal-oxide-semiconductor
The grid voltage of M15 increases, and to the 15th metal-oxide-semiconductor M15 and the 16th metal-oxide-semiconductor M16 conductings, circuit starts to work normally.This
When the 12nd metal-oxide-semiconductor M12 grid voltage be pulled low to low level, the 12nd metal-oxide-semiconductor M12 conductings, to the 13rd metal-oxide-semiconductor
The grid voltage rising of M13, the 14th metal-oxide-semiconductor M14, the 13rd metal-oxide-semiconductor M13 and the 14th metal-oxide-semiconductor M14 conductings；Due to the tenth
The partial pressure of three metal-oxide-semiconductor M13 acts on, and the grid voltage of the 15th metal-oxide-semiconductor M15 slowly declines, by the way that two metal-oxide-semiconductors are rationally arranged
The voltage when grid of breadth length ratio, the 15th metal-oxide-semiconductor M15 of control is stablized is less than the cut-in voltage of the 15th metal-oxide-semiconductor M15, to
15th metal-oxide-semiconductor M15 shutdowns, start-up circuit are closed, reference voltage generating circuit normal work.First metal-oxide-semiconductor M1, the 2nd MOS
Pipe M2, third metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6 constitute three road current mirrors, the three or three pole
Pipe Q3 and the 8th resistance R8 constitutes compensation circuit, the base voltage of third transistor Q3 can by the ratio of reasonable disposition resistance into
Row control.When temperature is raised, the electric current for flowing through the collector and emitter of third transistor Q3 increases, the 8th upper ends resistance R8
Voltage raising makes base voltage be influenced by the second triode Q2 negative temperature coefficients and reduces, and base current is caused to reduce so that
Collector current increases and partial offset that increased part is reduced by base current with temperature, and the first capacitance C1 is arranged can be into one
Step stabilizes the output voltage。
The present invention also provides a kind of power module, the power module includes a kind of base with compensation circuit
Quasi- potential circuit, further includes rectification circuit, filter circuit, and the rectification circuit connects filter circuit, the filter electricity
Road connects reference voltage circuit, the reference voltage circuit connection load, and the rectification circuit is used to input in alternating current and convert
For direct current, the filter circuit is used to remove the ripple and noise in DC voltage, so as to be provided more for load
Stable output voltage.
A kind of reference voltage circuit and power module with compensation circuit provided by the present invention, efficiently solve existing
There is the problem that reference voltage generating circuit low precision, temperature coefficient are high in technology, on the basis of traditional benchmark potential circuit, leads to
Increase compensation circuit is crossed, reduces the temperature coefficient of output voltage, and there is higher power supply rejection ratio.It is provided by the invention
A kind of power module can be used for exporting input AC electrotransformation for steady dc voltage.
Description of the drawings
Fig. 1 is a kind of reference voltage circuit schematic diagram with compensation circuit provided by the invention.
Fig. 2 is that a kind of temperature characterisitic of reference voltage circuit output voltage with compensation circuit provided by the invention is bent
Line.
Fig. 3 is a kind of structural schematic diagram of power module provided by the invention.
Specific implementation mode
The present invention provides a kind of reference voltage circuits and power module with compensation circuit, to make the mesh of the present invention
, technical solution and advantage it is clearer, clear, the present invention is described in more detail for the embodiment that develops simultaneously referring to the drawings.
It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
As shown in fig. 1, a kind of reference voltage circuit with compensation circuit, including start-up circuit and reference voltage generate electricity
Road；The start-up circuit includes：12nd metal-oxide-semiconductor M12, the 13rd metal-oxide-semiconductor M13, the 14th metal-oxide-semiconductor M14, the 15th metal-oxide-semiconductor
M15, the 16th metal-oxide-semiconductor M16, the second capacitance C2, the 17th metal-oxide-semiconductor M17；Wherein, the 17th metal-oxide-semiconductor M17, the 12nd metal-oxide-semiconductor
The source electrode of M12 connects voltage, and the drain electrode of the grounded-grid of the 17th metal-oxide-semiconductor M17, the 17th metal-oxide-semiconductor M17 connects the 13rd MOS
The grid of the drain electrode of pipe M13 and the 15th metal-oxide-semiconductor M15, the source electrode ground connection of the 13rd metal-oxide-semiconductor M13, the 12nd metal-oxide-semiconductor M12's
First end, the drain electrode of the 15th metal-oxide-semiconductor M15 and the grid of the 16th metal-oxide-semiconductor M16 of the second capacitance C2 of grid connection, second
The second end of capacitance C2 connects voltage, the drain electrode and connection of the 14th metal-oxide-semiconductor M14 of drain electrode connection of the 12nd metal-oxide-semiconductor M12
The grid of 14th metal-oxide-semiconductor M14 and the grid of the 13rd metal-oxide-semiconductor M13, the source electrode ground connection of the 14th metal-oxide-semiconductor M14, the 15th
The source electrode of metal-oxide-semiconductor M15 is grounded, and the source electrode of the 16th metal-oxide-semiconductor M16 connects voltage, the drain electrode conduct of the 16th metal-oxide-semiconductor M16
The output of start-up circuit.The reference voltage generating circuit includes：First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, third metal-oxide-semiconductor M3,
4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9, the tenth
Metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance
R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the first capacitance C1, the first triode Q1, the second triode Q2, third
Triode Q3；Wherein, the output end of the source electrode connection start-up circuit of the first metal-oxide-semiconductor M1, third metal-oxide-semiconductor M3, the 5th metal-oxide-semiconductor M5 is
The drain electrode of 16th metal-oxide-semiconductor M16, the drain electrode of the first metal-oxide-semiconductor M1 of grid connection of the first metal-oxide-semiconductor M1, the source electrode of the second metal-oxide-semiconductor M2
And the grid of third metal-oxide-semiconductor M3 and the 5th metal-oxide-semiconductor M5, the grid of the second metal-oxide-semiconductor M2 connect the 4th metal-oxide-semiconductor M4, the 6th metal-oxide-semiconductor
The grid of M6, the source electrode of the 4th metal-oxide-semiconductor M4 of drain electrode connection of third metal-oxide-semiconductor M3, the drain electrode of the 5th metal-oxide-semiconductor M5 connect the 6th MOS
The source electrode of pipe M6, the first end of the drain electrode connection first resistor R1 of the second metal-oxide-semiconductor M2, the second end ground connection of first resistor R1, the
The 7th metal-oxide-semiconductor M7 of drain electrode connection of four metal-oxide-semiconductor M4, the source electrode of the 8th metal-oxide-semiconductor M8, the leakage of the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8
Pole is separately connected the drain electrode of the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 source electrode ground connection,
9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 grid be connected and connect the drain electrode of the 9th metal-oxide-semiconductor M9, the grid of the 7th metal-oxide-semiconductor M7 connects
Connect the first end of the first end and the 6th resistance R6 of second resistance R2, the of the second end connection 3rd resistor R3 of second resistance R2
The second end of the first end of one end and the 4th resistance R4,3rd resistor R3 connects drain electrode and the third transistor of the 6th metal-oxide-semiconductor M6
The collector of Q3, the emitter of the grid and the first triode Q1 of the 8th metal-oxide-semiconductor M8 of second end connection of the 4th resistance R4, first
The collector and base earth of triode Q1, the base stage and the 7th resistance of the second end connection third transistor Q3 of the 6th resistance R6
The first end of R7, the second end of the 7th resistance R7 connect the emitter of the second triode Q2, the collector of the second triode Q2 and
Base earth, the first end of the 8th resistance R8 of emitter connection resistance of third transistor Q3, the second of the 8th resistance R8 of resistance
The grid of end ground connection, the 11st metal-oxide-semiconductor M11 connects drain electrode and the first end of the 5th resistance R5 of the 8th metal-oxide-semiconductor M8, the 5th resistance
The second end of R5 connects the first end of the first capacitance C1, the second end of the first capacitance C1 connect the 11st metal-oxide-semiconductor M11 drain electrode and
The drain electrode of 6th metal-oxide-semiconductor M6, the source electrode ground connection of the 11st metal-oxide-semiconductor M11, the drain voltage of the 6th metal-oxide-semiconductor M6As export
Voltage.The first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, third metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th MOS
Pipe M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 17th metal-oxide-semiconductor M17, the 12nd metal-oxide-semiconductor M12, the 16th metal-oxide-semiconductor M16 are
PMOS tube, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, the 13rd metal-oxide-semiconductor M13, the 14th metal-oxide-semiconductor
M14, the 15th metal-oxide-semiconductor M15 are NMOS tube.The first triode Q1, the second triode Q2 are PNP pipe, the three or three pole
Pipe Q3 manages for NPN.
When circuit start, due to the grounded-grid of the 11st metal-oxide-semiconductor M11, be directly connected, therefore the 15th metal-oxide-semiconductor
The grid voltage of M15 increases, and to the 15th metal-oxide-semiconductor M15 and the 16th metal-oxide-semiconductor M16 conductings, circuit starts to work normally.This
When the 12nd metal-oxide-semiconductor M12 grid voltage be pulled low to low level, the 12nd metal-oxide-semiconductor M12 conductings, to the 13rd metal-oxide-semiconductor
The grid voltage rising of M13, the 14th metal-oxide-semiconductor M14, the 13rd metal-oxide-semiconductor M13 and the 14th metal-oxide-semiconductor M14 conductings；Due to the tenth
The partial pressure of three metal-oxide-semiconductor M13 acts on, and the grid voltage of the 15th metal-oxide-semiconductor M15 slowly declines, by the way that two metal-oxide-semiconductors are rationally arranged
The voltage when grid of breadth length ratio, the 15th metal-oxide-semiconductor M15 of control is stablized is less than the cut-in voltage of the 15th metal-oxide-semiconductor M15, to
15th metal-oxide-semiconductor M15 shutdowns, start-up circuit are closed, reference voltage generating circuit normal work.First metal-oxide-semiconductor M1, the 2nd MOS
Pipe M2, third metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6 constitute three road current mirrors, the three or three pole
Pipe Q3 and the 8th resistance R8 constitutes compensation circuit, the base voltage of third transistor Q3 can by the ratio of reasonable disposition resistance into
Row control.When temperature is raised, the electric current for flowing through the collector and emitter of third transistor Q3 increases, the 8th upper ends resistance R8
Voltage raising makes base voltage be influenced by the second triode Q2 negative temperature coefficients and reduces, and base current is caused to reduce so that
Collector current increases and partial offset that increased part is reduced by base current with temperature, and the first capacitance C1 is arranged can be into one
Step stabilizes the output voltage。
Simulation result shows that there is reference voltage generating circuit of the invention lower temperature coefficient and higher power supply to press down
Ratio processed, wherein the temperature characteristics of output voltage is as shown in Figure 2.
As shown in figure 3, the present invention also provides a kind of power module, the power module includes that described one kind carrying benefit
The reference voltage circuit for repaying circuit, further includes rectification circuit, filter circuit, and the rectification circuit connects filter circuit, institute
Filter circuit connection reference voltage circuit is stated, the reference voltage circuit connection load, the rectification circuit will be for that will exchange
Electricity input is converted into direct current, and the filter circuit is used to remove the ripple and noise in DC voltage, so as to be negative
It carries and more stable output voltage is provided.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect range.
Claims (1)
1. a kind of working method of power module, the power module include：Rectification circuit, filter circuit, with compensating back
The reference voltage circuit on road, the rectification circuit connect filter circuit, and the filter circuit connects reference voltage circuit, institute
State reference voltage circuit connection load；Reference voltage circuit includes start-up circuit and reference voltage generating circuit；
It is characterized in that, the start-up circuit includes：12nd metal-oxide-semiconductor M12, the 13rd metal-oxide-semiconductor M13, the 14th metal-oxide-semiconductor M14,
15th metal-oxide-semiconductor M15, the 16th metal-oxide-semiconductor M16, the second capacitance C2, the 17th metal-oxide-semiconductor M17；Wherein, the 17th metal-oxide-semiconductor M17,
The source electrode of 12nd metal-oxide-semiconductor M12 connects voltage, the grounded-grid of the 17th metal-oxide-semiconductor M17, the drain electrode of the 17th metal-oxide-semiconductor M17
The drain electrode of the 13rd metal-oxide-semiconductor M13 and the grid of the 15th metal-oxide-semiconductor M15 are connected, the source electrode of the 13rd metal-oxide-semiconductor M13 is grounded, the
The grid of 12 metal-oxide-semiconductor M12 connects the first end of the second capacitance C2, the drain electrode of the 15th metal-oxide-semiconductor M15 and the 16th metal-oxide-semiconductor
The second end of the grid of M16, the second capacitance C2 connects voltage, drain electrode the 14th metal-oxide-semiconductor of connection of the 12nd metal-oxide-semiconductor M12
The drain electrode of M14 simultaneously connects the grid of the 14th metal-oxide-semiconductor M14 and the grid of the 13rd metal-oxide-semiconductor M13, the 14th metal-oxide-semiconductor M14's
Source electrode is grounded, and the source electrode ground connection of the 15th metal-oxide-semiconductor M15, the source electrode of the 16th metal-oxide-semiconductor M16 connects voltage, the 16th MOS
Output of the drain electrode of pipe M16 as start-up circuit；The reference voltage generating circuit includes：First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor
M2, third metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the
Nine metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, first resistor R1, second resistance R2,3rd resistor R3, the 4th is electric
Hinder the capacitance of R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, first C1, the first triode Q1, second
Triode Q2, third transistor Q3；Wherein, the source electrode connection of the first metal-oxide-semiconductor M1, third metal-oxide-semiconductor M3, the 5th metal-oxide-semiconductor M5 start
The output end of the circuit i.e. drain electrode of the 16th metal-oxide-semiconductor M16, the grid of the first metal-oxide-semiconductor M1 connect the drain electrode of the first metal-oxide-semiconductor M1, the
The source electrode of two metal-oxide-semiconductor M2 and the grid of third metal-oxide-semiconductor M3 and the 5th metal-oxide-semiconductor M5, the grid connection the 4th of the second metal-oxide-semiconductor M2
The grid of metal-oxide-semiconductor M4, the 6th metal-oxide-semiconductor M6, the source electrode of the 4th metal-oxide-semiconductor M4 of drain electrode connection of third metal-oxide-semiconductor M3, the 5th metal-oxide-semiconductor M5
The 6th metal-oxide-semiconductor M6 of drain electrode connection source electrode, the first end of the drain electrode connection first resistor R1 of the second metal-oxide-semiconductor M2, first resistor
The second end of R1 is grounded, the 7th metal-oxide-semiconductor M7 of drain electrode connection of the 4th metal-oxide-semiconductor M4, the source electrode of the 8th metal-oxide-semiconductor M8, the 7th metal-oxide-semiconductor
The drain electrode of M7, the 8th metal-oxide-semiconductor M8 are separately connected the drain electrode of the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 9th metal-oxide-semiconductor M9, the tenth
The source electrode of metal-oxide-semiconductor M10 is grounded, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 grid be connected and connect the drain electrode of the 9th metal-oxide-semiconductor M9,
The first end of the first end and the 6th resistance R6 of the grid connection second resistance R2 of 7th metal-oxide-semiconductor M7, the second of second resistance R2
The first end of the first end and the 4th resistance R4 of end connection 3rd resistor R3, the second end of 3rd resistor R3 connect the 6th metal-oxide-semiconductor
The collector of the drain electrode and third transistor Q3 of M6, the second end of the 4th resistance R4 connect the grid and first of the 8th metal-oxide-semiconductor M8
The emitter of triode Q1, the collector and base earth of the first triode Q1, the second end connection the three or three of the 6th resistance R6
The first end of the base stage of pole pipe Q3 and the 7th resistance R7, the second end of the 7th resistance R7 connect the emitter of the second triode Q2,
The collector and base earth of second triode Q2, the first of the 8th resistance R8 of emitter connection resistance of third transistor Q3
End, the second end ground connection of the 8th resistance R8 of resistance, the grid of the 11st metal-oxide-semiconductor M11 connect the drain electrode and the 5th of the 8th metal-oxide-semiconductor M8
The first end of resistance R5, the second end of the 5th resistance R5 connect the first end of the first capacitance C1, and the second end of the first capacitance C1 connects
Connect the drain electrode of the 11st metal-oxide-semiconductor M11 and the drain electrode of the 6th metal-oxide-semiconductor M6, the source electrode ground connection of the 11st metal-oxide-semiconductor M11, the 6th metal-oxide-semiconductor
The drain voltage of M6 is output voltage；
The working method, including：When temperature is raised, the electric current for flowing through the collector and emitter of third transistor Q3 increases
Greatly, terminal voltage raising makes base voltage be influenced by the second triode Q2 negative temperature coefficients and reduces on the 8th resistance R8, causes
Base current reduces so that collector current increases and partial offset that increased part is reduced by base current with temperature.
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| CN201810403990.1A CN108491022A (en) | 2017-05-09 | 2017-05-09 | Power module and working method based on compensation circuit, filter circuit |
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| CN201710322269.5A CN106959722B (en) | 2017-05-09 | 2017-05-09 | A kind of reference voltage circuit and power module with compensation circuit |
| CN201810403990.1A CN108491022A (en) | 2017-05-09 | 2017-05-09 | Power module and working method based on compensation circuit, filter circuit |
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| CN201710322269.5A Division CN106959722B (en) | 2017-05-09 | 2017-05-09 | A kind of reference voltage circuit and power module with compensation circuit |
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| CN201810403990.1A Withdrawn CN108491022A (en) | 2017-05-09 | 2017-05-09 | Power module and working method based on compensation circuit, filter circuit |
| CN201810402368.9A Withdrawn CN108427469A (en) | 2017-05-09 | 2017-05-09 | The reference voltage circuit with compensation circuit of power module |
| CN201711161314.XA Pending CN107894805A (en) | 2017-05-09 | 2017-05-09 | A kind of power module for including reference voltage circuit |
| CN201710322269.5A Active CN106959722B (en) | 2017-05-09 | 2017-05-09 | A kind of reference voltage circuit and power module with compensation circuit |
| CN201810403994.XA Pending CN108376012A (en) | 2017-05-09 | 2017-05-09 | Power module and its working method with compensation circuit, filter circuit |
| CN201810679844.1A Pending CN108563281A (en) | 2017-05-09 | 2017-05-09 | A method of forming compensation circuit on reference voltage circuit |
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| CN201810402368.9A Withdrawn CN108427469A (en) | 2017-05-09 | 2017-05-09 | The reference voltage circuit with compensation circuit of power module |
| CN201711161314.XA Pending CN107894805A (en) | 2017-05-09 | 2017-05-09 | A kind of power module for including reference voltage circuit |
| CN201710322269.5A Active CN106959722B (en) | 2017-05-09 | 2017-05-09 | A kind of reference voltage circuit and power module with compensation circuit |
| CN201810403994.XA Pending CN108376012A (en) | 2017-05-09 | 2017-05-09 | Power module and its working method with compensation circuit, filter circuit |
| CN201810679844.1A Pending CN108563281A (en) | 2017-05-09 | 2017-05-09 | A method of forming compensation circuit on reference voltage circuit |
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| CN108427470A (en) * | 2017-05-09 | 2018-08-21 | 常州爱上学教育科技有限公司 | The reference voltage circuit and its working method with compensation circuit of power module |
| CN109407747A (en) * | 2018-12-19 | 2019-03-01 | 佛山臻智微芯科技有限公司 | A kind of band-gap reference circuit of the high PSRR of second-order temperature compensation |
| CN110187166B (en) * | 2019-06-26 | 2024-06-28 | 成都芯进电子有限公司 | Current sensor temperature compensation circuit for low-temperature drift |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN108563281A (en) | 2018-09-21 |
| CN108427470A (en) | 2018-08-21 |
| CN108376012A (en) | 2018-08-07 |
| CN106959722B (en) | 2018-08-07 |
| CN107894805A (en) | 2018-04-10 |
| CN108427469A (en) | 2018-08-21 |
| CN106959722A (en) | 2017-07-18 |
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Application publication date: 20180904 |