CN108485668B - Junction dyeing solution for gallium arsenide semiconductor and junction dyeing method thereof - Google Patents
Junction dyeing solution for gallium arsenide semiconductor and junction dyeing method thereof Download PDFInfo
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- 238000004043 dyeing Methods 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 29
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 78
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 78
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 39
- 238000002156 mixing Methods 0.000 claims abstract description 16
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 12
- 238000010186 staining Methods 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 6
- 239000012467 final product Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- MTJGVAJYTOXFJH-UHFFFAOYSA-N 3-aminonaphthalene-1,5-disulfonic acid Chemical compound C1=CC=C(S(O)(=O)=O)C2=CC(N)=CC(S(O)(=O)=O)=C21 MTJGVAJYTOXFJH-UHFFFAOYSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 54
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910017604 nitric acid Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 gallium arsenide compound Chemical class 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000012192 staining solution Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007447 staining method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/30—Staining; Impregnating ; Fixation; Dehydration; Multistep processes for preparing samples of tissue, cell or nucleic acid material and the like for analysis
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/30—Staining; Impregnating ; Fixation; Dehydration; Multistep processes for preparing samples of tissue, cell or nucleic acid material and the like for analysis
- G01N2001/302—Stain compositions
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Abstract
The invention provides a junction dyeing solution for gallium arsenide semiconductors and a junction dyeing method thereof, wherein the junction dyeing solution comprises sulfuric acid (H) with the weight ratio of 1.5-42SO4) And hydrogen peroxide (H)2O2) A first solution prepared by mixing at a temperature of 40 to 60 ℃ and citric acid (C) in a weight ratio of 0.5 to 76H8O7) And hydrogen peroxide (H)2O2) And mixing the two solutions at a temperature of 5-20 ℃ to prepare a second solution. Therefore, the first solution and the second solution are utilized to carry out secondary selective etching, so that the problem of reaction overstimulation caused by one-time etching of the existing junction dyeing solution is solved, the junction dyeing operation of the gallium arsenide semiconductor is completed, the doped region of the gallium arsenide semiconductor can be shown by the junction dyeing method, an obvious profile can be observed under an optical microscope and a scanning electron microscope, and the failure analysis of the semiconductor is facilitated.
Description
Technical Field
The invention relates to the technical field of semiconductor chip manufacturing, in particular to a junction dyeing solution for gallium arsenide semiconductors and a junction dyeing method thereof.
Background
On a complete silicon chip for preparing a semiconductor chip, an N-type semiconductor is formed on one side of the silicon chip by using different doping processes, a P-type semiconductor is formed on the other side of the silicon chip, and a space charge region formed in the vicinity of an interface of the two semiconductors is called a PN junction (junction for short). PN junctions have unidirectional conductivity and are the material basis for many devices in electronics, such as semiconductor diodes, bipolar transistors, and the quality of PN junctions has a significant impact on device characteristics. Junction depth is one of important parameters for detecting PN junction, and displaying PN junction position by chemical staining solution is a common and simple detection method at present.
Most of the chemicals used in the wet chemical junction dyeing of silicon semiconductor are hydrofluoric acid (HF) and concentrated nitric acid (HNO)3) The oxidation and etching are performed on the silicon substrate with the P-type doped region, the N-type doped region and the undoped region. Because of the silicon material insideThe contained doping impurities are different, and different etching speeds can be achieved in the chemical solvent, wherein the etching speeds are respectively as follows: n type doping>Is not doped>P-type doping, a phenomenon known as "selective etching". In a solution prepared by hydrofluoric acid and concentrated nitric acid, the concentrated nitric acid oxidizes silicon into silicon dioxide and causes the hydrofluoric acid to etch and take away the silicon dioxide.
It is worth noting that when the existing mixed solution of hydrofluoric acid and concentrated nitric acid is used for gallium arsenide compound semiconductor, the reaction is too violent and cannot be controlled, which causes problems of over-etching of the sample, damage of the sample and the like. If the concentration of the mixed solution of hydrofluoric acid and concentrated nitric acid is reduced to perform junction dyeing on the gallium arsenide sample, selective etching cannot be generated due to the difference between the doping element used by the compound semiconductor and the doping element used by the silicon semiconductor, so that the junction dyeing analysis on the gallium arsenide compound semiconductor cannot be performed.
Disclosure of Invention
In view of the above situation, the present invention provides a junction dyeing solution for gallium arsenide semiconductor and a junction dyeing method thereof, so as to solve the technical problem that the failure analysis of the doping process cannot be completed due to the severe reaction of the hydrofluoric acid and the concentrated nitric acid mixed solution for gallium arsenide.
In order to achieve the above object, the present invention provides a junction dyeing solution for gallium arsenide semiconductor, comprising: a first solution containing 1.5-4 wt% of sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) The first solution is used for carrying out first selective etching; a second solution containing 0.5-7 wt% of citric acid (C)6H8O7) And hydrogen peroxide (H)2O2) And the second solution is used for carrying out second selective etching.
In the knot dyeing solution example of the present invention, sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) The weight ratio was 1.5.
In the knot dyeing solution example of the present invention, citric acid (C)6H8O7) And hydrogen peroxide (H)2O2) The weight ratio of (A) to (B) is 1.
In the knot dyeing solution example of the present invention, the first solution is sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) The mixing temperature is 40-60 ℃.
In the knot dyeing solution example of the present invention, the citric acid (C) of the second solution6H8O7) And hydrogen peroxide (H)2O2) The mixing temperature of (A) is 5-20 ℃.
In an embodiment of the junction dyeing solution of the present invention, the gallium arsenide semiconductor is a high carrier mobility transistor (HEMT) composed of aluminum gallium arsenide (AlGaAs) and gallium arsenide (GaAs).
In addition, the invention also provides a junction dyeing method for the gallium arsenide semiconductor, which comprises the following steps:
a dyeing sample preparation step: grinding a gallium arsenide semiconductor sample to be dyed to a fixed point by adopting a cross section grinding method to prepare a sample to be dyed;
a first solution preparation step: taking sulfuric acid (H) with the weight ratio of 1.5-42SO4) And hydrogen peroxide (H)2O2) Sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) Mixing at the temperature of 40-60 ℃ to prepare a first solution;
a second solution preparation step: taking citric acid (C) with the weight ratio of 0.5-76H8O7) And hydrogen peroxide (H)2O2) Adding citric acid (C)6H8O7) And hydrogen peroxide (H)2O2) Mixing at the temperature of 5-20 ℃ to prepare a second solution;
a first selective etching step: the sample to be stained is placed in the first solution using sulfuric acid (H)2SO4) Carrying out first selective etching on a sample to be dyed;
a second selective etching step: placing the sample to be stained into the second solution, using citric acid (C)6H8O7) Carrying out second selective etching on the sample to be dyed;
and (3) observing a dyed sample: the stained sample was observed for knot staining using a microscope.
In the embodiment of the knot dyeing method, in the first selective etching step, the sample to be dyed is selectively etched in the first solution for 20-50 seconds; and in the second selective etching step, the sample to be dyed is subjected to selective etching in the second solution for 30-70 seconds.
In the embodiment of the knot dyeing method, after the first selective etching step is finished, a sample is cleaned; after the second selective etching step is completed, the sample is cleaned.
In an embodiment of the knot dyeing method of the present invention, the first solution preparation step: the first solution is prepared from 1.5 parts by weight of sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) Mixing to obtain the final product; the second solution preparation step: the second solution is prepared from citric acid (C) with the weight ratio of 16H8O7) And hydrogen peroxide (H)2O2) Mixing to obtain the final product.
Due to the adoption of the technical scheme, the invention has the following beneficial effects: by using sulfuric acid and citric acid as main components of the dyeing solution, the problems of excessive corrosion and damage of a sample caused by excessive sensitivity of a gallium arsenide compound semiconductor to hydrofluoric acid and nitric acid are effectively solved; in addition, the second-order junction dyeing method using the sulfuric acid and hydrogen peroxide solution, citric acid and hydrogen peroxide solution with specific ratio can make the doped area of GaAs compound semiconductor show smoothly, and the obvious profile can be observed under both optical microscope and scanning electron microscope.
These and other objects, features and advantages of the present invention will become more fully apparent from the following detailed description and appended claims, and may be realized by means of the instrumentalities, devices and combinations particularly pointed out in the appended claims.
Drawings
FIG. 1 is the result of a semiconductor optical microscope after second-order junction dyeing using the junction dyeing solution of the present invention.
Fig. 2 shows the results of a semiconductor Scanning Electron Microscope (SEM) before the second junction staining.
FIG. 3 is the results of a semiconductor Scanning Electron Microscope (SEM) after second order junction staining using the inventive junction staining solution.
Detailed Description
To facilitate an understanding of the present invention, the following description is made in conjunction with the accompanying drawings and examples.
The invention provides a junction dyeing solution for gallium arsenide semiconductors and a junction dyeing method thereof. The gallium arsenide semiconductor of the present invention may be a High Electron Mobility Transistor (HEMT) composed of aluminum gallium arsenide (AlGaAs) and gallium arsenide (GaAs), but is not limited to the above, and gallium arsenide semiconductors including aluminum gallium arsenide (AlGaAs) and gallium arsenide (GaAs) are all within the scope of the present invention.
The knot dyeing solution of the invention comprises sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) A first solution of citric acid (C), and6H8O7) And hydrogen peroxide (H)2O2) A second solution of composition. Because the etching rate of sulfuric acid to aluminum gallium arsenide is greater than that of gallium arsenide, and the etching rate of citric acid to gallium arsenide is greater than that of aluminum gallium arsenide, the invention utilizes the first solution and the second solution to carry out second-order junction dyeing, namely secondary selective etching, so as to overcome the problem of reaction overstimulation caused by one-time etching of the existing junction dyeing solution, and complete the junction dyeing operation of gallium arsenide semiconductors.
In the embodiment of the invention, the first solution is prepared from 1.5-4 parts by weight of sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) The components are mixed at the temperature of 40-60 ℃ to prepare the composition; the second solution is composed of 0.5-7 weight percent of citric acid (C)6H8O7) And hydrogen peroxide (H)2O2) The components are mixed at the temperature of 5-20 ℃.
More preferably, the sulfuric acid (H) of the first solution2SO4) And hydrogen peroxide (H)2O2) The weight ratio is 1.5; citric acid (C) of the second solution6H8O7) And hydrogen peroxide (H)2O2) The weight ratio of (A) to (B) is 1.
The composition of the junction dyeing solution of the present invention is explained above, and the junction dyeing method of the junction dyeing solution for gallium arsenide semiconductor is explained below; the method comprises the following steps:
a dyeing sample preparation step: and grinding the gallium arsenide semiconductor sample to be dyed to a fixed point by adopting a cross section grinding method to prepare the sample to be dyed.
A first solution preparation step: taking sulfuric acid (H) with the weight ratio of 1.5-42SO4) And hydrogen peroxide (H)2O2) Sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) Mixing at the temperature of 40-60 ℃ to prepare a first solution; in this step, the sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) The weight ratio of (A) is preferably 1.5.
A second solution preparation step: taking citric acid (C) with the weight ratio of 0.5-76H8O7) And hydrogen peroxide (H)2O2) Adding citric acid (C)6H8O7) And hydrogen peroxide (H)2O2) Mixing at the temperature of 5-20 ℃ to prepare a second solution; in this step, the citric acid (C)6H8O7) And hydrogen peroxide (H)2O2) The weight ratio of (B) is preferably 1.
A first selective etching step: the sample to be stained is placed in the first solution using sulfuric acid (H)2SO4) Carrying out first selective etching on a sample to be dyed; in this step, the sample to be dyed is selectively etched in the first solution for 20 to 50 seconds, so as to first etch aluminum gallium arsenide (AlGaAs) in the sample to be dyed using sulfuric acid.
A second selective etching step: placing the sample to be stained into the second solution, using citric acid (C)6H8O7) Carrying out second selective etching on the sample to be dyed; in this step, the sample to be dyed is selectively etched in the second solution for 30 to 70 seconds, preferably by using citric acid to etch gallium arsenide (GaAs) in the sample to be dyed.
And (3) observing a dyed sample: observing the knot dyeing result of the dyed sample by using a microscope; in this step, the microscope includes an optical microscope and/or a scanning electron microscope, so as to perform failure analysis on the semiconductor by using the staining result obtained by microscope observation.
Particularly, the junction dyeing solution and the junction dyeing method thereof provided by the invention have excellent help for the failure analysis of the doping process of the gallium arsenide semiconductor; because the semiconductor chip can not normally operate due to the failure of the doping concentration error or the doping position deviation sometimes in the doping process, the gallium arsenide semiconductor second-order junction dyeing solution formula can be used for the problem of the doping process of the gallium arsenide sample, therefore, if the dyed sample has the wrong doping concentration, the depth of the outline can be seen to be different, and if the doping position is wrong or the deviation, the outline deviation can be seen after the dyeing; therefore, the technical scheme provided by the invention can be used for rapidly and extensively checking whether the doping process deviates and the doping depth conforms to the expectation during cross section analysis.
As shown in the drawings of the present specification, FIG. 1 shows a dyeing trace (within the box in FIG. 1) observed by an optical microscope after the knot dyeing solution and the second knot dyeing method of the present invention are used; fig. 2 and 3 show the results of the scanning electron microscope before (fig. 2) and after (fig. 3) staining after the knot staining solution and the second-order knot staining method of the present invention are adopted, and a clear knot staining profile can be observed from fig. 3, which is beneficial to rapid failure analysis during cross-sectional analysis.
While the present invention has been described in detail and with reference to the accompanying drawings and examples, it will be apparent to one skilled in the art that various changes and modifications can be made therein. Therefore, certain details of the embodiments are not to be interpreted as limiting, and the scope of the invention is to be determined by the appended claims.
Claims (8)
1. A junction dyeing solution for gallium arsenide semiconductors comprising:
a first solution, wherein the first solution is prepared from 1.5-4 parts by weight of sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) The first solution is used for carrying out first selective etching;
a second solution of citric acid (C) in a weight ratio of 0.5-76H8O7) And hydrogen peroxide (H)2O2) The second solution is used for carrying out second selective etching;
sulfuric acid (H) of the first solution2SO4) And hydrogen peroxide (H)2O2) The mixing temperature is 40-60 ℃;
citric acid (C) of the second solution6H8O7) And hydrogen peroxide (H)2O2) The mixing temperature of (A) is 5-20 ℃.
2. The junction dyeing solution for gallium arsenide semiconductor of claim 1, wherein: sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) The weight ratio was 1.5.
3. The junction dyeing solution for gallium arsenide semiconductor of claim 1, wherein: citric acid (C)6H8O7) And hydrogen peroxide (H)2O2) The weight ratio of (A) to (B) is 1.
4. The junction dyeing solution for gallium arsenide semiconductor of claim 1, wherein: the gallium arsenide semiconductor is a high carrier mobility transistor (HEMT) composed of aluminum gallium arsenide (AlGaAs) and gallium arsenide (GaAs).
5. A method for junction dyeing of gallium arsenide semiconductors, comprising the steps of:
a dyeing sample preparation step: grinding a gallium arsenide semiconductor sample to be dyed to a fixed point by adopting a cross section grinding method to prepare a sample to be dyed;
a first solution preparation step: taking sulfuric acid (H) with the weight ratio of 1.5-42SO4) And hydrogen peroxide (H)2O2) Sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) Mixing at the temperature of 40-60 ℃ to prepare a first solution;
a second solution preparation step: taking citric acid (C) with the weight ratio of 0.5-76H8O7) And hydrogen peroxide (H)2O2) Adding citric acid (C)6H8O7) And hydrogen peroxide (H)2O2) Mixing at the temperature of 5-20 ℃ to prepare a second solution;
a first selective etching step: the sample to be stained is placed in the first solution using sulfuric acid (H)2SO4) Carrying out first selective etching on a sample to be dyed;
a second selective etching step: placing the sample to be stained into the second solution, using citric acid (C)6H8O7) Carrying out second selective etching on the sample to be dyed;
and (3) observing a dyed sample: the stained sample was observed for knot staining using a microscope.
6. The junction dyeing method for gallium arsenide semiconductor according to claim 5, wherein:
in the first solution preparation step, the first solution is prepared from sulfuric acid (H) having a weight ratio of 1.52SO4) And hydrogen peroxide (H)2O2) Mixing to obtain the final product;
in the second solution preparing step, the second solution is prepared from citric acid (C) with a weight ratio of 16H8O7) And hydrogen peroxide (H)2O2) Mixing to obtain the final product.
7. The junction dyeing method for gallium arsenide semiconductor according to claim 5, further comprising:
in the first selective etching step, the sample to be dyed is subjected to selective etching in the first solution for 20-50 seconds;
in the second selective etching step, the sample to be dyed is subjected to selective etching in the second solution for 30-70 seconds.
8. The junction dyeing method for gallium arsenide semiconductor according to any of claims 5 to 7, further comprising:
after the first selective etching step is completed, cleaning the sample;
after the second selective etching step is completed, the sample is cleaned.
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|---|---|---|---|---|
| JPS54100261A (en) * | 1978-01-24 | 1979-08-07 | Mitsubishi Electric Corp | Semiconductor device |
| TW200529309A (en) * | 2004-02-27 | 2005-09-01 | Yeong-Her Wang | Method and solution for selectively etching Ⅲ-Ⅴ semiconductor |
| CN102051179A (en) * | 2009-11-04 | 2011-05-11 | 中国科学院半导体研究所 | Chemical corrosion liquid for selectively corroding cap layer of gallium arsenide solar cell |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100261A (en) * | 1978-01-24 | 1979-08-07 | Mitsubishi Electric Corp | Semiconductor device |
| TW200529309A (en) * | 2004-02-27 | 2005-09-01 | Yeong-Her Wang | Method and solution for selectively etching Ⅲ-Ⅴ semiconductor |
| CN102051179A (en) * | 2009-11-04 | 2011-05-11 | 中国科学院半导体研究所 | Chemical corrosion liquid for selectively corroding cap layer of gallium arsenide solar cell |
Non-Patent Citations (1)
| Title |
|---|
| GaAs/GaAlAs晶片的化学择优腐蚀;高伟等;《半导体光电》;19891231;第10卷(第4期);第31-35页 * |
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