CN108484201B - 一种低收缩率多孔氮化硅陶瓷及其制备方法 - Google Patents
一种低收缩率多孔氮化硅陶瓷及其制备方法 Download PDFInfo
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 229910021426 porous silicon Inorganic materials 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000004005 microsphere Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 38
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- 239000002245 particle Substances 0.000 claims abstract description 14
- 238000007710 freezing Methods 0.000 claims abstract description 12
- 230000008014 freezing Effects 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 11
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 239000002270 dispersing agent Substances 0.000 claims description 20
- 238000001272 pressureless sintering Methods 0.000 claims description 16
- 239000011812 mixed powder Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 5
- 239000011224 oxide ceramic Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- 125000003158 alcohol group Chemical group 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
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- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 3
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- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明提供一种低收缩率多孔氮化硅陶瓷及其制备方法,以α‑氮化硅、氧化铝、氧化钇为主要原料,制备水基陶瓷浆料,先在油相中乳化形成球型液滴,而后通过冷冻、油‑陶瓷微球分离、冷冻干燥获得多孔陶瓷微球坯体,然后通过烧结获得多孔氮化硅陶瓷微球,进行粒径分级配比,并经过再模具成型、固化、干燥、烧结,最终获得多孔氮化硅陶瓷,与现有技术相比,本发明的有益效果在于,本发明采用油中滴液与冷冻成型相结合制备不同粒径的多孔氮化硅微球,利用冷冻成型工艺优势实现了孔结构及气孔率的可控;可用于制备大型的多孔氮化硅异形构件,消除了冷冻成型过程中引起的孔结构的方向性;同时,大大降低了烧结过程中收缩过大引起的结构缺陷的可能性。
Description
技术领域
本发明涉及多孔陶瓷材料的成型技术领域,具体涉及一种低收缩率多孔氮化硅陶瓷及其制备方法。
背景技术
多孔氮化硅陶瓷材料,具有高比强、耐高温、抗氧化和耐磨损以及抗热震等优良的综合性能的同时,还具有相对较低的密度和低的介电常数、介电损耗等优良的介电性能,因其能够充分发挥氮化硅陶瓷和多孔陶瓷两者的优异性能,广泛应用于机械、化工、海洋工程、航空航天等重要领域。
制备孔隙率和孔隙结构可控、高强度、低介电常数的氮化硅基多孔陶瓷是实现氮化硅基多孔陶瓷应用的关键。氮化硅基多孔陶瓷的制备技术主要有部分烧结法、造孔法(有机物、碳粉)、注模成型以及自蔓延烧结法等。Fukasawa等人通过冷冻使Si3N4陶瓷浆料凝固,并经冷冻干燥、无压烧结,获得了了孔隙率大于50%的多孔Si3N4陶瓷。然而,在冷冻成型过程中冰晶生长的方向性导致烧结后的多孔陶瓷孔结构具有一定取向性,这一孔结构特征限制了多孔氮化硅陶瓷在某些特定环境下的应用。
另外,氮化硅是一种共价键化合物,且Si-N键具有很高的键强,氮原子和硅原子的自扩散系数很小。烧结过程中,致密化所必需的体积扩散及晶界扩散速度、烧结驱动力很小,常规固相烧结很难实现其致密化。因此需要添加烧结助剂在高温过程中生成液相,利用液相烧结原理促进α-β相转变的同时进行致密化。然而,致密化的过程伴随着试样有较大收缩率,对于异形结构件,会由于收缩率不一致形成应力从而使烧结后试件出现裂纹,这极大影响到了异性结构多孔氮化硅陶瓷的发展与应用。
鉴于上述缺陷,本发明创作者经过长时间的研究和实践提出了本发明。
发明内容
本发明为了在获得气孔率可控的多孔氮化硅陶瓷的同时,解决现有技术中存在的烧结过程中收缩较大的问题,提供一种低收缩率多孔氮化硅陶瓷的制备方法,其包括以下步骤:
第一步:将α-氮化硅、氧化铝、氧化钇混合后,湿混、氮烘干过筛,得到均匀的混合粉末;
第二步:将第一步所述混合粉末中加入去离子水和分散剂A,得到均匀稳定的水基陶瓷浆料;
第三步:将第二步所述水基陶瓷浆料通过震动滴液进入油相中,使所述水基陶瓷浆料在油相形成微球型液滴;并通过冷冻介质进行冷冻处理后,从所述油相中过滤分离凝固的陶瓷微球,采用乙酸乙酯在-20℃下反复低温清洗;
第四步:将第三步所述陶瓷微球在冷冻干燥机进行干燥,并在石墨坩埚中氮化硼埋粉,搅拌,在氮气气氛保护下进行第一次无压烧结,获得多孔氮化硅微球;
第五步:将第四步所述多孔氮化硅微球进行过筛分级;
第六步:将氧化铝、氧化钇、有机单体和分散剂B溶解于溶剂中,获得稳定氧化铝-氧化钇陶瓷浆料;
第七步:将第五步所述分级后的多孔氮化硅微球按一定配比装入模具,并将第六步所述的氧化铝-氧化钇陶瓷浆料注入模具中震动,去掉上层多余陶瓷浆料,固化12小时候后取出,干燥后获得陶瓷坯体;
第八步:将第七步所述干燥后的陶瓷坯体,在氮气气氛保护下进行第二次无压烧结,获得多孔氮化硅陶瓷。
较佳的,第二步所述分散剂A为聚丙烯酸钠或聚乙烯醇,且所述分散剂A占所述混合粉末质量的0.5%-1%。
较佳的,第二步所述水基陶瓷浆料中浆料固含量为10-40vol%。
较佳的,第三步所述冷冻处理条件为,所述冷冻介质为酒精,所述冷冻温度为-30℃--10℃。
较佳的,第三步所述震动滴液的条件为,震动频率为100-1000次/min,滴头孔径为Φ0.16-0.51mm。
较佳的,第四步所述第一次无压烧结的工艺条件为,以20℃/min的升温速率升温至500℃,保温1h,然后升温至1700℃-1850℃,保温2h;第八步所述第二次无压烧结的工艺条件为,以20℃/min的升温速率升温至500℃,保温1h,然后升温至1500℃-1850℃。
较佳的,第五步所述过筛分级的条件为,当所述多孔氮化硅微球的粒径小于100μm是为I级,当所述多孔氮化硅微球的粒径介于100-400μm之间时为Ⅱ级,当所述多孔氮化硅微球的粒径大于400μm时为Ⅲ级。
较佳的,第六步所述有机单体为海因环氧树脂,且所述有机单体质量为所述陶瓷粉末质量的2wt%;所述的分散剂B为聚丙烯酸,且所述分散剂B的质量为所述陶瓷粉末质量的0.6wt%。
较佳的,第七步所述Ⅰ级、所述Ⅱ级和所述Ⅲ级的多孔氮化硅微球的质量配比为2:10:0或2:10:10或0:3:10。
利用上述方法制备的一种低收缩率多孔氮化硅陶瓷。
与现有技术比较,本发明的有益效果在于:
1、采用油中滴液与冷冻成型相结合制备不同粒径的多孔氮化硅微球,利用冷冻成型工艺优势实现了孔结构及气孔率的可控;
2、采用多孔微球粒径配比及二次烧结突破了烧结过程收缩过大的问题,制备出的多孔氮化硅陶瓷气孔率为30-60%,且线收缩率小于3%。
3、本发明的低收缩率多孔氮化硅陶瓷的制备方法可用于制备大型的多孔氮化硅异形构件,消除了冷冻成型过程中引起的孔结构的方向性;同时,大大降低了烧结过程中收缩过大引起的结构缺陷的可能性。
具体实施方式
以下结合实施例,对本发明上述的和另外的技术特征和优点作更详细的说明。
实施例1
第一步:将α-氮化硅、氧化铝、氧化钇按质量比93:2:5混合,并以氮化硅球和无水乙醇为球磨介质,湿混12小时后,氮烘干过筛,得到均匀的混合粉末;
第二步:将第一步所述混合粉末中加入去离子水和分散剂A,得到均匀稳定的水基陶瓷浆料,其中所述分散剂A为聚丙烯酸钠,且所述分散剂A占所述混合粉末质量的0.5%,所述水基陶瓷浆料中浆料固含量为20vol%;
第三步:将第二步所述水基陶瓷浆料通过震动滴液进入油相中,使所述水基陶瓷浆料在油相形成微球型液滴,并通过冷冻介质进行冷冻处理后,从所述油相中过滤分离凝固的陶瓷微球,采用乙酸乙酯在-20℃下反复低温清洗,其中所述油相为玉米油;所述震动滴液的条件为,震动频率为100次/min,滴头孔径为Φ0.16mm;所述冷冻处理条件为,所述冷冻介质为酒精,所述冷冻温度为-30℃;
第四步:将第三步所述陶瓷微球在冷冻干燥机进行干燥,并在石墨坩埚中氮化硼埋粉,适当搅拌使微球坯体无相互接触,在氮气气氛保护下进行无压烧结,获得多孔氮化硅微球,所述无压烧结的工艺条件为,以20℃/min的升温速率升温至500℃,保温1h,然后升温至1700℃,保温2h;
第五步:将第四步所述多孔氮化硅微球进行过筛分级,所述过筛分级的条件为,当所述多孔氮化硅微球的粒径小于100μm是为I级,当所述多孔氮化硅微球的粒径介于100-400μm之间时为Ⅱ级,当所述多孔氮化硅微球的粒径大于400μm时为Ⅲ级;
第六步:将氧化铝、氧化钇、有机单体和分散剂B溶解于溶剂中,获得固含量为20vol%的稳定氧化铝-氧化钇陶瓷浆料,其中,所述氧化铝和氧化钇的质量分数比为1:2;所述有机单体为海因环氧树脂,且所述有机单体质量为所述陶瓷粉末质量的2wt%;所述的分散剂B为聚丙烯酸,且所述分散剂B的质量为所述陶瓷粉末质量的0.6wt%;
第七步:将第五步所述Ⅰ级、所述Ⅱ级和所述Ⅲ级的多孔氮化硅微球按质量配比为2:10:0装入模具,并将第六步所述的氧化铝-氧化钇陶瓷浆料注入模具中震动,去掉上层多余陶瓷浆料,固化12小时候后取出,干燥后获得陶瓷坯体;
第八步:将第七步所述干燥后的陶瓷坯体,在氮气气氛保护下进行无压烧结,所述无压烧结的工艺条件为,以20℃/min的升温速率升温至500℃,保温1h,然后升温至1500℃,保温2h,最终获得多孔氮化硅陶瓷。
本发明采用油中滴液与冷冻成型相结合制备不同粒径的多孔氮化硅微球,利用冷冻成型工艺优势实现了孔结构及气孔率的可控;采用多孔微球粒径配比及二次烧结突破了烧结过程收缩过大的问题,制备出的多孔氮化硅陶瓷气孔率为30-60%,且线收缩率小于3%,主要原因是第一阶段制备出的多孔陶瓷球已经过高温烧结,第二阶段采用多孔微球粒径配比制备多孔陶瓷材料时,烧结的过程中的固液相反应主要在陶瓷球接触点进行,从而导致收缩率较低。因此,本发明的低收缩率多孔氮化硅陶瓷的制备方法可用于制备大型的多孔氮化硅异形构件,消除了冷冻成型过程中引起的孔结构的方向性;同时,大大降低了烧结过程中收缩过大引起的结构缺陷的可能性。
实施例2
本实施例与实施例1的不同之处在于,所述第一步为,将α-氮化硅、氧化铝、氧化钇混合后,按质量比90:3:7湿混12小时后,氮烘干过筛,得到均匀的混合粉,其它与实施例1相同。
实施例3
本实施例与实施例1的不同之处在于,第二步所述分散剂A为聚乙烯醇,且所述分散剂A占所述混合粉末质量的1%,其它与实施例1相同。
实施例4
本实施例与实施例1的不同之处在于,第二步所述水基陶瓷浆料中浆料固含量为10vol%。,其它与实施例1相同。
实施例5
本实施例与实施例1的不同之处在于,第二步所述水基陶瓷浆料中浆料固含量为40vol%,其它与实施例1相同。
实施例6
本实施例与实施例1的不同之处在于,第三步所述震动滴液的条件为,震动频率为1000次/min,滴头孔径为Φ0.51mm,其它与实施例1相同。
实施例7
本实施例与实施例1的不同之处在于,第三步所述震动滴液的条件为,震动频率为400次/min,滴头孔径为Φ0.34mm,其它与实施例1相同。
实施例8
本实施例与实施例1的不同之处在于,第四步所述第一次无压烧结的工艺条件为,以20℃/min的升温速率升温至500℃,保温1h,然后升温至1800℃,保温2h;第八步所述第二次无压烧结的工艺条件为,以20℃/min的升温速率升温至500℃,保温1h,然后升温至1700℃,其它与实施例1相同。
实施例9
本实施例与实施例1的不同之处在于,第四步所述第一次无压烧结的工艺条件为,以20℃/min的升温速率升温至500℃,保温1h,然后升温至1850℃,保温2h;第八步所述第二次无压烧结的工艺条件为,以20℃/min的升温速率升温至500℃,保温1h,然后升温至1850℃,其它与实施例1相同。
实施例10
本实施例与实施例1的不同之处在于,第七步所述Ⅰ级、所述Ⅱ级和所述Ⅲ级的多孔氮化硅微球的质量配比为2:10:10或0:3:10。
实施例11
本实施例与实施例1的不同之处在于,第七步所述Ⅰ级、所述Ⅱ级和所述Ⅲ级的多孔氮化硅微球的质量配比为0:3:10。
以上所述仅为本发明的较佳实施例,对本发明而言仅仅是说明性的,而非限制性的。本专业技术人员理解,在本发明权利要求所限定的精神和范围内可对其进行许多改变,修改,甚至等效,但都将落入本发明的保护范围内。
Claims (10)
1.一种低收缩率多孔氮化硅陶瓷的制备方法,其特征在于,其包括以下步骤:
第一步:将α-氮化硅、氧化铝、氧化钇混合后,湿混、氮烘干过筛,得到均匀的混合粉末;
第二步:将第一步所述混合粉末中加入去离子水和分散剂A,得到均匀稳定的水基陶瓷浆料;
第三步:将第二步所述水基陶瓷浆料通过振动滴液进入油相中,使所述水基陶瓷浆料在油相形成微球型液滴;并通过冷冻介质进行冷冻处理后,从所述油相中过滤分离凝固的陶瓷微球,采用乙酸乙酯在-20℃下反复低温清洗;
第四步:将第三步所述陶瓷微球在冷冻干燥机进行干燥,并在石墨坩埚中氮化硼埋粉,搅拌,在氮气气氛保护下进行第一次无压烧结,获得多孔氮化硅微球;
第五步:将第四步所述多孔氮化硅微球进行过筛分级;
第六步:将氧化铝、氧化钇、有机单体和分散剂B溶解于溶剂中,获得稳定氧化铝-氧化钇陶瓷浆料;
第七步:将第五步所述分级后的多孔氮化硅微球按一定配比装入模具,并将第六步所述的氧化铝-氧化钇陶瓷浆料注入模具中振动,去掉上层多余陶瓷浆料,固化12小时后取出,干燥后获得陶瓷坯体;
第八步:将第七步所述干燥后的陶瓷坯体,在氮气气氛保护下进行第二次无压烧结,获得多孔氮化硅陶瓷。
2.根据权利要求1所述的低收缩率多孔氮化硅陶瓷的制备方法,其特征在于,第二步所述分散剂A为聚丙烯酸钠或聚乙烯醇,且所述分散剂A占所述混合粉末质量的0.5%-1%。
3.根据权利要求2所述的低收缩率多孔氮化硅陶瓷的制备方法,其特征在于,第二步所述水基陶瓷浆料中浆料固含量为10-40vol%。
4.根据权利要求1所述的低收缩率多孔氮化硅陶瓷的制备方法,其特征在于,第三步所述冷冻处理条件为,所述冷冻介质为酒精,所述冷冻温度为-30℃--10℃。
5.根据权利要求1所述的低收缩率多孔氮化硅陶瓷的制备方法,其特征在于,第三步所述振动滴液的条件为,振动频率为100-1000次/min,滴头孔径为Φ0.16-0.51mm。
6.根据权利要求1所述的低收缩率多孔氮化硅陶瓷的制备方法,其特征在于,第四步所述第一次无压烧结的工艺条件为,以20℃/min的升温速率升温至500℃,保温1h,然后升温至1700℃-1850℃,保温2h;第八步所述第二次无压烧结的工艺条件为,以20℃/min的升温速率升温至500℃,保温1h,然后升温至1500℃-1850℃。
7.根据权利要求1所述的低收缩率多孔氮化硅陶瓷的制备方法,其特征在于,第五步所述过筛分级的条件为,当所述多孔氮化硅微球的粒径小于100μm是为I级,当所述多孔氮化硅微球的粒径介于100-400μm之间时为Ⅱ级,当所述多孔氮化硅微球的粒径大于400μm时为Ⅲ级。
8.根据权利要求1所述的低收缩率多孔氮化硅陶瓷的制备方法,其特征在于,第六步所述有机单体为海因环氧树脂,且所述有机单体质量为所述陶瓷粉末质量的2wt%;所述的分散剂B为聚丙烯酸,且所述分散剂B的质量为所述陶瓷粉末质量的0.6wt%。
9.根据权利要求7所述的低收缩率多孔氮化硅陶瓷的制备方法,其特征在于,所述Ⅰ级、所述Ⅱ级和所述Ⅲ级的多孔氮化硅微球的质量配比为2:10:0或2:10:10或0:3:10。
10.根据利用权利要求1-9任一项所述的方法制备的一种低收缩率多孔氮化硅陶瓷。
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