CN108462841A - Pel array and imaging sensor - Google Patents
Pel array and imaging sensor Download PDFInfo
- Publication number
- CN108462841A CN108462841A CN201810236872.6A CN201810236872A CN108462841A CN 108462841 A CN108462841 A CN 108462841A CN 201810236872 A CN201810236872 A CN 201810236872A CN 108462841 A CN108462841 A CN 108462841A
- Authority
- CN
- China
- Prior art keywords
- pel array
- pixel unit
- floating diffusion
- photodiode
- diffusion nodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a kind of pel array and imaging sensor, a kind of pel array includes the multiple pixel units to line up rows and columns, and each pixel unit includes：Multiple photodiodes；Multiple transmission transistors, source electrode are respectively connected to respective photodiode, and drain electrode is commonly connected to floating diffusion nodes；Reset transistor is connected between fixed power source and the floating diffusion nodes；Reading circuit is connected to the floating diffusion nodes.Multiple photodiodes in present invention pixel unit share reset circuit and reading circuit, improve fill factor, increase sensitivity and signal-to-noise ratio；In the imaging sensor using above-mentioned pel array, pass through the reading control of photodiode in the combination of multiple pixel units in pel array or pixel unit, dynamic range, sensitivity and the frame per second of imaging sensor can be properly increased, the image application demand that black and white or colored various modes can be met simultaneously, enhances the practicability and portability of the pel array.
Description
Technical field
The present invention relates to image sensor technologies fields, more particularly, to a kind of pel array and imaging sensor.
Background technology
Compared to ccd image sensor, cmos image sensor have same or better image performance, it is lower at
Sheet, higher integrated level, lower power consumption and faster speed, thus its application in IP Camera is continuously increased, and is had
Gradually replace the trend of ccd image sensor.
In monitoring safety-security area, many new features and new function may be implemented in the outstanding technology of cmos image sensor, and
Crucial differentiation characteristic, therefore, application of the cmos image sensor in terms of monitoring can be provided for the monitoring system of OEM vendor
It is increasingly wider.
As cmos image sensor is in the extensive popularization and application of monitoring safety-security area, the spirit to cmos image sensor
The requirements such as sensitivity, signal-to-noise ratio, dynamic range, resolution ratio, power consumption and integrated level are continuously improved, especially sensitivity and dynamic range
Performance.
Therefore, it is a technical problem to be solved urgently to find a kind of highly sensitive, high dynamic range imaging sensor.
Invention content
The purpose of the present invention is to provide a kind of dot structures, to improve sensitivity and the dynamic range of imaging sensor.
In order to achieve the above object, the present invention provides a kind of pel arrays, including the multiple pixel lists to line up rows and columns
Member, each pixel unit include：
Multiple photodiodes, for accumulating the charge of photoelectric effect generation to respond incident light；
Multiple transmission transistors, drain electrode are respectively connected to respective photodiode, and source electrode is commonly connected to floating diffusion
Node, according to respective transmission of control signals by the electric charge transfer of respective photodiode to the floating diffusion nodes；
Reset transistor is connected between fixed power source and the floating diffusion nodes, is reset according to reseting controling signal
The current potential of the floating diffusion nodes；
Reading circuit is connected to the floating diffusion nodes, reads the picture signal of the floating diffusion nodes and output
To alignment；
Wherein, the multiple transmission transistor in each pixel unit corresponds to respective transmission control letter respectively
Number, multiple pixel units in same a line share the transmission of control signals.
Optionally, each pixel unit includes four photodiodes and four transmission transistors, and four
A photodiode is symmetrical arranged with 2 × 2 arrangement modes.
Optionally, the picture signal of multiple pixel units in same row is exported to an alignment or two
The alignment.
Optionally, if the picture signal of multiple pixel units in same row is exported to an alignment,
The playback mode of the pel array reads for hemistich.
Optionally, if the picture signal of multiple pixel units in same row is exported to two alignments,
The playback mode of the pel array is that double hemistich are read.
Optionally, the reading circuit includes output amplifier and row selecting transistor.
Optionally, the output amplifier is casacade multi-amplifier or one-stage amplifier.
Optionally, the one-stage amplifier is source following transistor, and the grid of the source following transistor is connected to
The floating diffusion nodes, drain electrode are connected to the fixed power source, and source electrode is connected to the drain electrode of the row selecting transistor, described
The source electrode of row selecting transistor is connected to the alignment.
Optionally, the pixel unit further includes capacitance, one end of the capacitance be connected to the floating diffusion nodes with
Between the input terminal of the reading circuit, other end ground connection.
Optionally, the capacitance is between fixed capacity or the floating diffusion nodes and the input terminal of the reading circuit
The parasitic capacitance that generates over the ground of node.
In order to achieve the above object, the present invention also provides a kind of imaging sensors, including as described in above-mentioned any one
Pel array, the exposure mode of described image sensor includes rolling exposure mode and global exposure mode, and described image passes
Sensor further includes：
Control module, the control module are used to control the reset, selection and output of the photodiode；
Memory module, the output signal for storing the photodiode under global exposure mode.
Optionally, under the global exposure mode, multiple photodiodes of each pixel unit expose simultaneously
And reading.
Optionally, described image sensor is standard RGB pattern image sensors, HDR pattern image sensors or RGB-
IR pattern image sensors.
Compared with prior art, in the pel array of the present invention, multiple photodiodes in each pixel unit are each
Be connected to floating diffusion nodes from by a corresponding transmission transistor, and reset transistor and reading circuit be connected to it is floating
Dynamic diffusion node so that multiple photodiodes share reset circuit and reading circuit, effectively increase the filling of dot structure
The factor, to increase sensitivity and signal-to-noise ratio；And multiple transmission transistors in each pixel unit correspond to respectively it is respective
Transmission of control signals, can freedom and flexibility select the Exposure mode and reading manner of each pixel unit, be suitable for rolling exposure or
The image sensor architecture of overall situation exposure, in the imaging sensor using above-mentioned pel array, by multiple in pel array
The combination of pixel unit or the reading control of pixel unit internal photo, can properly increase the dynamic model of imaging sensor
It encloses, sensitivity and frame per second, while the image application demand of black and white or colored various modes can be met, effectively enhance the pixel battle array
The practicability and portability of row.
Description of the drawings
Fig. 1 is the pel array schematic diagram of one embodiment of the invention；
Fig. 2 is the circuit structure diagram of the pixel unit of one embodiment of the invention；
Fig. 3-4 is the schematic diagram for being successively read corresponding clock signal of one embodiment of the invention；
Fig. 5 is the standard RGB pattern image sensor structural schematic diagrams of one embodiment of the invention；
Fig. 6 is the HDR pattern image sensor structural schematic diagrams of one embodiment of the invention；
Fig. 7-8 is double PD image sensor architecture schematic diagrames in the HDR patterns of one embodiment of the invention；
Fig. 9 is the HDR pattern image sensor structural schematic diagrams of one embodiment of the invention；
Figure 10 is the RGB-IR pattern image sensor structural schematic diagrams of one embodiment of the invention；
The schematic diagram of corresponding clock signal is read while Figure 11-12 is one embodiment of the invention；
Figure 13 is the RGB addition scheme image sensor architecture schematic diagrames of one embodiment of the invention.
Specific implementation mode
The specific implementation mode of the present invention is described in more detail below in conjunction with schematic diagram.According to following description and
Claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and
Using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Inventor has found when studying the structure of imaging sensor, as cmos image sensor is in monitoring safety-security area
Extensive popularization and application, to the sensitivity of cmos image sensor, signal-to-noise ratio, dynamic range, resolution ratio, power consumption and integrated level etc.
It is required that being continuously improved, especially sensitivity and dynamic range performance.
In order to obtain higher sensitivity, it is contemplated that the photodiode photosensitive region for pursuing bigger, in dot structure
One timing of area, can take multiple photodiodes to share the dot structure of reset circuit and reading circuit, to improve the pixel
The fill factor of structure increases sensitivity and the signal-to-noise ratio of the dot structure.
In addition, form pel array using above-mentioned dot structure, by the combination of multiple dot structures in pel array or
The reading control of dot structure internal photo can further increase photosensitive area, to increase based on the pel array
The sensitivity of imaging sensor entirety and dynamic range.
Based on this, the embodiment of the present invention proposes that a kind of pel array, the pel array include the multiple pictures to line up rows and columns
Plain unit, each pixel unit include：
Multiple photodiodes, for accumulating the charge of photoelectric effect generation to respond incident light；
Multiple transmission transistors, source electrode are respectively connected to respective photodiode, and drain electrode is commonly connected to floating diffusion
Node, according to respective transmission of control signals by the electric charge transfer of respective photodiode to the floating diffusion nodes；
Reset transistor is connected between fixed power source and the floating diffusion nodes, is reset according to reseting controling signal
The current potential of the floating diffusion nodes；
Reading circuit is connected to the floating diffusion nodes, reads the picture signal of the floating diffusion nodes and output
To alignment；
Wherein, the multiple transmission transistor in each pixel unit corresponds to respective transmission control letter respectively
Number, multiple pixel units in same a line share the transmission of control signals.
As shown in Figure 1, m*n pixel unit is in matrix distribution, the picture element matrix of a m rows n row is constituted, m, n are just whole
Number.M*n pixel unit can be identical structure, and each pixel unit is denoted as cell (k, j) successively, wherein k be less than etc.
In the positive integer of m, j is the positive integer less than or equal to n.
In one embodiment, as shown in Fig. 2, each pixel unit includes：
Four photodiode PD, for accumulating the charge of photoelectric effect generation to respond incident light, two pole of each photoelectricity
One end of pipe PD connects respective transmission transistor, other end ground connection, in conjunction with Fig. 1, four photodiode PD (P (0,0), P
(0,1), p (1,0), p (1,1)) it is symmetrical arranged with 2 × 2 arrangement modes, it is arranged in arrays；
Four transmission transistors m0, m1, m2 and m3, the source electrode of each transmission transistor are respectively connected to respective photoelectricity two
Pole pipe PD, a transmission transistor is corresponding with a photodiode, and drain electrode is commonly connected to floating diffusion nodes FD, according to each
From transmission of control signals tx00, tx01, tx10 and tx11 by the electric charge transfer of respective photodiode PD to floating diffusion section
Point FD；
Reset transistor K1 is connected to fixed power source VDD(output high level) between floating diffusion nodes FD, according to multiple
The current potential of position control signal rst resetting floating diffusion nodes FD；
Reading circuit is connected to floating diffusion nodes FD, reads the picture signal of floating diffusion nodes FD and exports to row
Line, the reading circuit include output amplifier K2 and row selecting transistor K3.
In one embodiment, output amplifier K2 can be casacade multi-amplifier or one-stage amplifier.For example, with output
Amplifier K2 be one-stage amplifier for, can be source following transistor.As shown in Fig. 2, source following transistor K2
Grid is connected to floating diffusion nodes FD, and drain electrode is connected to fixed power source VDD, source electrode is connected to the drain electrode of row selecting transistor K3,
The source electrode of row selecting transistor K3 is connected to alignment, and the grid of row selecting transistor K3 meets row selection signal R_sel.
In one embodiment, as shown in Fig. 2, each pixel unit can also include capacitance C0, one end of capacitance C0 connects
It is connected between floating diffusion nodes FD and the input terminal of the reading circuit, other end ground connection.Capacitance C0 can be fixed capacity,
It can also be the parasitic capacitance that the node between floating diffusion nodes FD and the input terminal of the reading circuit generates over the ground.
It is understood that the number of photodiode PD is not limited only to four mentioned by above-described embodiment, it is visual to have
Body needs are adjusted flexibly.And the dot structure of common standard RGB pattern color imaging sensors includes four kinds of basic lists
Colour vegetarian refreshments R, Gr, Gb and B, therefore, for convenience of the subsequent expansion application of the pixel unit, in an embodiment of the invention,
Pixel unit takes the structure of four photodiode PD.
As shown in Figure 1, and Fig. 2, four transmission transistor PD in each pixel unit is combined to correspond to respective biography respectively
Defeated control signal tx00, tx01, tx10 and tx11 control signal (such as kth in multiple pixel unit common transmitteds with a line
All pixel unit cell (k, 1) of row, cell (k, 2) ..., the transmission of control signals tx00 (k) of cell (k, n) shares, passes
Defeated control signal tx01 (k) shares, transmission of control signals tx10 (k) is shared and transmission of control signals tx11 (k) is shared)；It is in
With a line multiple pixel units share reseting controling signal and row selection signal (all pixel unit cell of such as row k (k,
1), cell (k, 2) ..., cell (k, n) share reseting controling signal rst<k>And row selection signal R_sel<k>).
In the pel array, transmission of control signals tx00 (k), the tx01 of all pixels unit in row k
(k), tx10 (k) and tx11 (k), reseting controling signal rst<k>And row selection signal R_sel<k>By the row of pel array
Selection line selectively exports.
Optionally, the picture signal of multiple pixel units in same row is exported to an alignment or two alignments.
Specifically, as shown in Figure 1, the m rows n row pel array include 2n alignment, be denoted as P (0), P (1), P respectively
(2)、P(3)、…、P(2n-2)、P(2n-1).Wherein, alignment P (2j-2) and row selection in the pixel unit of jth row odd-numbered line are brilliant
The source electrode of body pipe K3 is connected, the source electrode phase of alignment P (2j-1) and row selecting transistor K3 in the pixel unit of jth row even number line
Even.
Wherein, alignment P (2j-2) and alignment P (2j-1) can be same alignment or mutually independent alignment.One
In a embodiment, if the picture signal of multiple pixel units in same row is exported to an alignment, the pel array
Playback mode be hemistich read；If the picture signal of multiple pixel units in same row is exported to two alignments, institute
The playback mode for stating pel array is that double hemistich are read.
Specifically, when alignment P (2j-2) and alignment P (2j-1) is same alignment, that is, it is in same row (jth row)
The picture signal of multiple pixel units is exported to an alignment, is read every time by alignment P (2j-2) (that is, alignment P (2j-1))
Jth arranges the charge of photodiode PD inductions in the pixel unit of certain a line, reads the pixel unit of jth row line by line, every time only
The pixel unit of " hemistich " can be read, the playback mode of the pel array reads for hemistich；As alignment P (2j-2) and alignment P
When (2j-1) is mutually independent alignment, that is, the picture signal for being in multiple pixel units of same row (jth row) is exported to two
Alignment can read jth by alignment P (2j-2) and alignment P (2j-1) simultaneously every time and arrange light in the pixel unit of certain two row
The charge of electric diode PD inductions, can read the pixel unit of 2 " hemistich ", the playback mode of the pel array simultaneously every time
It is read for double hemistich so that the reading rate of the pel array doubles, so that the frame per second of image doubles.
The embodiment of the present invention also provides a kind of imaging sensor, which includes above-mentioned pel array, the figure
Exposure mode and global Exposure mode are rolled as the Exposure mode of sensor can be divided into, described image sensor further includes control
Module and memory module：Control module includes control circuit and driving circuit, for in pel array pixel unit (in
Photodiode PD) resetted, selected and exported；Memory module is connected to drain electrode and the source electrode of row selecting transistor K3,
Output information for storing photodiode PD in global exposure mode.
In the imaging sensor, each pixel unit all has row address and column address.The row of each pixel unit
Address corresponds to the row select line of driving circuit driving, and the column address of each pixel unit corresponds to the row of driving circuit driving
Line.Driving circuit is controlled by control circuit to selectively read out the corresponding pixel unit of row and column appropriate in pel array
Output signal.
Due to all pixels units shared transmission of control signals, reseting controling signal and row selection letter in same a line
Number, so the exposure and reading per one-row pixels unit synchronize.
In addition, the reading manner for four photodiode PD in each pixel unit includes the mode that is successively read and same
When reading manner.Wherein, the mode that is successively read is successively read light in four photodiode PD of each pixel unit
The sequential of the charge that electrical effect generates, four transmission of control signals tx00, tx01, tx10 and tx11 in each pixel unit can
To differ or part is identical；Described while reading manner is while reading in four photodiode PD of each pixel unit
The charge that photoelectric effect generates, the sequential of four transmission of control signals tx00, tx01, tx10 and tx11 in each pixel unit
It is just the same.
Optionally, as shown in figure 3, reading four of each pixel unit in same one-row pixels unit using the mode of being successively read
The charge of a photodiode PD.Reading timing control signal as shown in Figure 3, four transmission of control signals tx00, tx01,
The sequential of tx10 and tx11 is different, is read out successively to four photodiodes in each pixel unit of same a line.
At this point, if the picture signal of multiple pixel units in same row is exported to an alignment, certain is read every time
A photodiode PD of each pixel unit in one-row pixels unit reads the pixel unit of " hemistich ", when reading
Sequence is as shown in Figure 3；If the picture signal of multiple pixel units in same row is exported to two alignments, can read simultaneously every time
The photodiode PD of each pixel unit in certain two row pixel unit is taken, that is, reads the pixel unit of bis- " hemistich ", is read
Sequential improves the frame per second of imaging sensor, it can be achieved that 2 as shown in figure 4, the row reading circuit of i.e. imaging sensor doubles
Times frame per second.
The pel array that mode is successively read after above-mentioned exposure can be applied in black white image sensor architecture, i.e., the described figure
As sensor can be used as not requiring the black white image sensor of color.
Optionally, the above-mentioned pel array for being successively read mode applies also in standard RGB pattern image sensors, such as
Shown in Fig. 5, each dot structures of standard RGB pattern image sensors include four kinds of basic monochromatic pixel R, Gr, Gb and
B, four kinds of monochromes pixel R, Gr, Gb and B obtain the optoelectronic induction charge component of different colours respectively, then are calculated using linear interpolation
Method calculates the rgb value of each dot structure.Therefore, the pel array being successively read after above-mentioned exposure can be used for standard RGB patterns
In the framework of imaging sensor, to covering a corresponding color (R on each photodiode PD in each pixel unit：It is red
Color, Gr：Green 1, Gb：Green 2, B：Blue) optical filter, using each photodiode PD monochromatic pixels basic as one
Point a, so that pixel unit can be as a dot structure of RGB pattern image sensors, to each pixel unit point
Four readings, i.e., be successively read four photodiode PD, obtains the optoelectronic induction of the corresponding four kinds of colors of R, Gr, Gb and B
Charge component, then the rgb value of each pixel unit is calculated using linear interpolation algorithm.
In addition, the mode that is successively read of each pixel unit is not limited only to Fig. 3 and four photodiode PD shown in Fig. 4
It is successively read mode, the reading manner that two of which or three photodiode PD can also be used to read simultaneously can be with view
As the demand of sensor does flexible selection.
Four photodiode PD of each pixel unit can also use two of which photodiode PD or three light
The reading manner that electric diode PD is read simultaneously, this pel array can be applied to HDR (high dynamic range) mode image sensing
In device.
As shown in fig. 6, in HDR pattern image sensors, to four kinds of monochromatic pixel R, Gr, Gb for constituting dot structure
And B has carried out correction extension respectively, has obtained four kinds of monochrome correction pixel R ', Gr ', Gb ', B ', each dot structure includes
Eight kinds of monochromatic pixel R, R ', Gr, Gr ', Gb, Gb ', B, B ', it can be considered to by the corresponding correction of monochromatic pixel
Monochromatic pixel framework is in the pixel unit of the embodiment of the present invention.
Based on this, as shown in fig. 6, the pel array of the embodiment of the present invention is applied to a kind of HDR pattern image sensors
In, by the optical filter for covering different colours so that two photodiode PD in each pixel unit on a diagonal line
It is and the monochromatic pixel pair for two photodiode PD on same monochromatic pixel (such as R), another diagonal line
The monochrome correction pixel (such as R ') answered, four pixel units constitute a basic dot structure.In each pixel unit,
It being read out at twice, two monochrome pixel such as R are read simultaneously, and two monochrome correction pixel such as R ' are read simultaneously, in conjunction with
The output information of twi-read calculates the rgb value of each dot structure in four pixel units, by increasing each dot structure
The number of middle monochrome pixel increases the monochromatic photosensitive area of each dot structure, can effectively improve the dynamic of imaging sensor
Range.
The pel array that two photodiode PD are read simultaneously in four photodiode PD of each pixel unit is also
Accommodation can be done, HDR pattern image sensor structures are still applied to.As shown in Figures 7 and 8, water in each pixel unit
It is flat adjacent or vertically adjacent to two photodiode PD be same monochromatic pixel (R, Gr, Gb, B), remaining two light
Electric diode PD is monochrome correction pixel corresponding with the monochrome pixel, and four pixel units constitute a basic pictures
Plain structure.In each pixel unit, it is read out at twice：Two identical monochrome pixel such as R ' are read simultaneously, two
Monochrome correction pixel is read simultaneously, and each dot structure is calculated in conjunction with the output information of twi-read in four pixel units
Rgb value constitutes double PD image sensor architectures in HDR pattern image sensors.
Further, it is also possible to which as shown in figure 9, a photodiode PD is monochromatic pixel, residue in each pixel unit
Three photodiode PD be monochrome correction pixel corresponding with the monochromatic pixel, four pixel units constitute one
Basic dot structure.In each pixel unit, it is read out at twice：One monochrome pixel such as R is individually read, three
Monochrome correction pixel such as R ' corresponding with the monochrome pixel is read simultaneously, in conjunction with twi-read in four pixel units
Output information calculates the rgb value of each dot structure, the HDR pattern image sensors in the form of this constitutes another.
Similar, three photodiode PD are read simultaneously in four photodiode PD of above-mentioned each pixel unit
Pel array apply also in RGB-IR pattern image sensors, as shown in Figure 10, a photoelectricity in each pixel unit
Diode PD is near-infrared pixel IR, remaining three photodiode PD are same monochromatic pixel (R, Gr, Gb, B),
Four pixel units constitute a basic dot structure.In each pixel unit, it is read out at twice：One near-infrared
Pixel IR is individually read, and three identical monochrome pixel such as R ' are read simultaneously, in conjunction with twi-read in four pixel units
Output information calculate the rgb value of each dot structure, a kind of imaging sensor of RGB-IR patterns is constituted with this.
Optionally, photoelectricity in four photodiodes of each pixel unit can also be read using reading manner simultaneously to imitate
The charge that should be generated, the sequential complete one of four transmission of control signals tx00, tx01, tx10 and tx11 in each pixel unit
Sample.As shown in figure 11, four two poles of photoelectricity with each pixel unit in one-row pixels unit are read using reading manner simultaneously
The charge of pipe PD.
Four photodiode PD in each pixel unit in every row are read simultaneously, it is each in corresponding every a line
As seen in figures 11 or 12, four photodiode PD of each pixel unit are simultaneously turned on the timing control signal of pixel unit
It reads, compared to four photodiode PD are successively read achievable 4 times of frame per second, and increase the photosurface of single pixel point
Product, improves sensitivity and the dynamic range of dot structure, is suitble to the application scenarios in dark.
Optionally, pel array that is above-mentioned while reading can be applied to black white image sensor and RGB addition scheme images
In sensor.As shown in figure 13, in RGB addition scheme imaging sensors, each dot structure includes four kinds of basic monochromes
Pixel R, Gr, Gb and B, and in each dot structure each monochromatic pixel number more than one.
Based on this, a kind of optical filter of color can be covered on each pixel unit of the embodiment of the present invention, is made
For the base pixel unit of RGB addition scheme imaging sensors, as shown in figure 13.Four two poles of photoelectricity in each pixel unit
Pipe PD is one kind in monochromatic pixel R, Gr, Gb or B, and four pixel units constitute a basic dot structure.To each
Four photodiode PD in pixel unit gate reading simultaneously, and the output information read in conjunction with four pixel units calculates every
The rgb value of a dot structure constitutes the imaging sensor of RGB addition schemes with this, while also effectively increasing the frame of image
Rate and dynamic range.
It should be noted that under the global exposure mode of pel array, four photodiodes in each pixel unit
The reading of PD can only be read simultaneously, i.e., under global exposure mode, four photodiode PD of each pixel unit are simultaneously
Exposure and reading, and four photodiode PD read obtained output signal and preserve in a storage module simultaneously.
In conclusion in pel array provided in an embodiment of the present invention, two pole of multiple photoelectricity in each pixel unit
Pipe is connected to floating diffusion nodes each by a corresponding transmission transistor, and reset transistor and reading circuit are all connected with
To floating diffusion nodes so that multiple photodiodes share reset circuit and reading circuit, effectively increase dot structure
Fill factor, to increase sensitivity and signal-to-noise ratio；And multiple transmission transistors in each pixel unit are corresponding each respectively
From transmission of control signals, can freedom and flexibility select the Exposure mode and reading manner of each pixel unit, be suitable for rolling and expose
Light or the image sensor architecture of global exposure, in the imaging sensor using above-mentioned pel array, by pel array
The combination of multiple pixel units or the reading control of pixel unit internal photo, can properly increase the dynamic of imaging sensor
State range, sensitivity and frame per second, while the image application demand of black and white or colored various modes can be met, effectively enhance the picture
The practicability and portability of pixel array.
The preferred embodiment of the present invention is above are only, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical scheme of the present invention, to the invention discloses technical solution and
Technology contents make the variations such as any type of equivalent replacement or modification, belong to the content without departing from technical scheme of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (13)
1. a kind of pel array, including the multiple pixel units to line up rows and columns, which is characterized in that each pixel unit packet
It includes：
Multiple photodiodes, for accumulating the charge of photoelectric effect generation to respond incident light；
Multiple transmission transistors, source electrode are respectively connected to respective photodiode, and drain electrode is commonly connected to floating diffusion nodes,
According to respective transmission of control signals by the electric charge transfer of respective photodiode to the floating diffusion nodes；
Reset transistor is connected between fixed power source and the floating diffusion nodes, reset according to reseting controling signal described in
The current potential of floating diffusion nodes；
Reading circuit is connected to the floating diffusion nodes, reads the picture signal of the floating diffusion nodes and exports to row
Line；
Wherein, the multiple transmission transistor in each pixel unit corresponds to respective transmission of control signals respectively, locates
The transmission of control signals is shared in multiple pixel units of same a line.
2. pel array as described in claim 1, which is characterized in that each pixel unit includes four photoelectricity two
Pole pipe and four transmission transistors, four photodiodes are symmetrical arranged with 2 × 2 arrangement modes.
3. pel array as claimed in claim 2, which is characterized in that the image of multiple pixel units in same row
Signal is exported to an alignment or two alignments.
4. pel array as claimed in claim 3, which is characterized in that if the figure of multiple pixel units in same row
As signal is exported to an alignment, then the playback mode of the pel array is that hemistich is read.
5. pel array as claimed in claim 3, which is characterized in that if the figure of multiple pixel units in same row
As signal is exported to two alignments, then the playback mode of the pel array is that double hemistich are read.
6. pel array as described in claim 1, which is characterized in that the reading circuit includes that output amplifier and row select
Transistor.
7. pel array as claimed in claim 6, which is characterized in that the output amplifier is that casacade multi-amplifier or single-stage are put
Big device.
8. pel array as claimed in claim 7, which is characterized in that the one-stage amplifier is source following transistor, institute
The grid for stating source following transistor is connected to the floating diffusion nodes, and drain electrode is connected to the fixed power source, source electrode connection
Source electrode to the drain electrode of the row selecting transistor, the row selecting transistor is connected to the alignment.
9. pel array as described in claim 1, which is characterized in that the pixel unit further includes capacitance, the capacitance
One end is connected between the floating diffusion nodes and the input terminal of the reading circuit, other end ground connection.
10. pel array as claimed in claim 9, which is characterized in that the capacitance is fixed capacity or the floating diffusion
The parasitic capacitance that node between node and the input terminal of the reading circuit generates over the ground.
11. a kind of imaging sensor includes the pel array as described in any one of claim 1-10, which is characterized in that
The exposure mode of described image sensor includes rolling exposure mode and global exposure mode, and described image sensor further includes：
Control module, the control module are used to control the reset, selection and output of the photodiode；
Memory module, the output signal for storing the photodiode under global exposure mode.
12. imaging sensor as claimed in claim 11, which is characterized in that each described under the global exposure mode
Multiple photodiodes of pixel unit are exposed and are read simultaneously.
13. imaging sensor as claimed in claim 11, which is characterized in that described image sensor is standard RGB ideographs
As sensor, HDR pattern image sensors or RGB-IR pattern image sensors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810236872.6A CN108462841A (en) | 2018-03-21 | 2018-03-21 | Pel array and imaging sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810236872.6A CN108462841A (en) | 2018-03-21 | 2018-03-21 | Pel array and imaging sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108462841A true CN108462841A (en) | 2018-08-28 |
Family
ID=63236554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810236872.6A Pending CN108462841A (en) | 2018-03-21 | 2018-03-21 | Pel array and imaging sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108462841A (en) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109040624A (en) * | 2018-09-06 | 2018-12-18 | 上海晔芯电子科技有限公司 | pixel circuit and read method |
| CN109120834A (en) * | 2018-10-31 | 2019-01-01 | 昆山锐芯微电子有限公司 | Image sensor pixel circuit and its working method |
| CN109120836A (en) * | 2018-10-31 | 2019-01-01 | 昆山锐芯微电子有限公司 | Image sensor pixel circuit and its working method |
| CN109543351A (en) * | 2018-12-28 | 2019-03-29 | 上海集成电路研发中心有限公司 | The production method of the production method and pixel array of pixel array domain |
| CN109951660A (en) * | 2019-04-23 | 2019-06-28 | Oppo广东移动通信有限公司 | Pixel structure, CMOS image sensor, image signal processor and terminal |
| CN110336953A (en) * | 2019-07-02 | 2019-10-15 | 思特威(上海)电子科技有限公司 | Quaternary dot structure imaging sensor and reading and control method thereof |
| CN110334652A (en) * | 2019-07-05 | 2019-10-15 | 无锡睿勤科技有限公司 | Image processing method, electronic equipment and storage medium |
| CN110418088A (en) * | 2019-08-14 | 2019-11-05 | Oppo广东移动通信有限公司 | Pixel structure, image sensor and terminal |
| CN110730318A (en) * | 2019-09-30 | 2020-01-24 | 上海集成电路研发中心有限公司 | Pixel unit and pixel array for eliminating moire fringes |
| CN112738433A (en) * | 2020-12-29 | 2021-04-30 | 上海集成电路装备材料产业创新中心有限公司 | Test circuit for complete depletion voltage of any pixel of CIS pixel array |
| CN113676651A (en) * | 2021-08-25 | 2021-11-19 | 维沃移动通信有限公司 | Image sensor, control method, control device, electronic apparatus, and storage medium |
| CN113676652A (en) * | 2021-08-25 | 2021-11-19 | 维沃移动通信有限公司 | Image sensor, control method, control device, electronic apparatus, and storage medium |
| CN113709391A (en) * | 2021-08-26 | 2021-11-26 | 锐芯微电子股份有限公司 | CMOS image sensor and reading method thereof |
| CN113852772A (en) * | 2020-06-25 | 2021-12-28 | 爱思开海力士有限公司 | Image sensor with a plurality of pixels |
| CN114339085A (en) * | 2020-09-30 | 2022-04-12 | 思特威(上海)电子科技股份有限公司 | TOF image sensor pixel structure and ranging system |
| CN114363537A (en) * | 2022-01-12 | 2022-04-15 | 锐芯微电子股份有限公司 | Pixel structure and array, circuit and method, image sensor, and storage medium |
| CN115623343A (en) * | 2022-09-30 | 2023-01-17 | 北京大学 | In-sensor computation pixel unit, in-sensor computation array structure, operation method of in-sensor computation array structure and image sensing operation system |
| CN115767292A (en) * | 2019-02-19 | 2023-03-07 | 索尼半导体解决方案公司 | Signal processing method and imaging apparatus |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102984472A (en) * | 2011-09-02 | 2013-03-20 | 索尼公司 | Solid-state imaging device and camera system |
| CN203504673U (en) * | 2013-10-30 | 2014-03-26 | 上海集成电路研发中心有限公司 | CMOS image sensor used under split and merged pixel |
| CN103686103A (en) * | 2013-12-31 | 2014-03-26 | 上海集成电路研发中心有限公司 | Image sensor with merged and split modes and pixel units |
| CN104486602A (en) * | 2014-12-29 | 2015-04-01 | 上海集成电路研发中心有限公司 | Structure and method for realizing physical consolidation of pixels |
| CN104980669A (en) * | 2014-04-11 | 2015-10-14 | 芯视达系统公司 | Image sensor pixel structure with optimized uniformity |
| CA2964962A1 (en) * | 2014-12-05 | 2016-06-09 | Qualcomm Incorporated | Solid state image sensor with enhanced charge capacity and dynamic range |
| CN106851142A (en) * | 2015-12-03 | 2017-06-13 | 三星电子株式会社 | Support the imageing sensor of various operator schemes |
-
2018
- 2018-03-21 CN CN201810236872.6A patent/CN108462841A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102984472A (en) * | 2011-09-02 | 2013-03-20 | 索尼公司 | Solid-state imaging device and camera system |
| CN203504673U (en) * | 2013-10-30 | 2014-03-26 | 上海集成电路研发中心有限公司 | CMOS image sensor used under split and merged pixel |
| CN103686103A (en) * | 2013-12-31 | 2014-03-26 | 上海集成电路研发中心有限公司 | Image sensor with merged and split modes and pixel units |
| CN104980669A (en) * | 2014-04-11 | 2015-10-14 | 芯视达系统公司 | Image sensor pixel structure with optimized uniformity |
| CA2964962A1 (en) * | 2014-12-05 | 2016-06-09 | Qualcomm Incorporated | Solid state image sensor with enhanced charge capacity and dynamic range |
| CN107004688A (en) * | 2014-12-05 | 2017-08-01 | 高通股份有限公司 | Solid state image sensor with enhanced charge capacity and dynamic range |
| CN104486602A (en) * | 2014-12-29 | 2015-04-01 | 上海集成电路研发中心有限公司 | Structure and method for realizing physical consolidation of pixels |
| CN106851142A (en) * | 2015-12-03 | 2017-06-13 | 三星电子株式会社 | Support the imageing sensor of various operator schemes |
Cited By (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109040624B (en) * | 2018-09-06 | 2021-01-05 | 思特威(上海)电子科技有限公司 | Pixel circuit and reading method |
| CN109040624A (en) * | 2018-09-06 | 2018-12-18 | 上海晔芯电子科技有限公司 | pixel circuit and read method |
| CN109120834A (en) * | 2018-10-31 | 2019-01-01 | 昆山锐芯微电子有限公司 | Image sensor pixel circuit and its working method |
| CN109120836A (en) * | 2018-10-31 | 2019-01-01 | 昆山锐芯微电子有限公司 | Image sensor pixel circuit and its working method |
| CN109120836B (en) * | 2018-10-31 | 2021-01-22 | 锐芯微电子股份有限公司 | Image sensor pixel circuit and working method thereof |
| CN109120834B (en) * | 2018-10-31 | 2020-07-03 | 锐芯微电子股份有限公司 | Image sensor pixel circuit and working method thereof |
| CN109543351A (en) * | 2018-12-28 | 2019-03-29 | 上海集成电路研发中心有限公司 | The production method of the production method and pixel array of pixel array domain |
| CN115767292A (en) * | 2019-02-19 | 2023-03-07 | 索尼半导体解决方案公司 | Signal processing method and imaging apparatus |
| US11778333B2 (en) | 2019-02-19 | 2023-10-03 | Sony Semiconductor Solutions Corporation | Signal processing method and imaging apparatus |
| US12167144B2 (en) | 2019-02-19 | 2024-12-10 | Sony Semiconductor Solutions Corporation | Signal processing method and imaging apparatus |
| CN109951660A (en) * | 2019-04-23 | 2019-06-28 | Oppo广东移动通信有限公司 | Pixel structure, CMOS image sensor, image signal processor and terminal |
| CN109951660B (en) * | 2019-04-23 | 2021-09-03 | Oppo广东移动通信有限公司 | Pixel structure, CMOS image sensor, image signal processor and terminal |
| CN110336953B (en) * | 2019-07-02 | 2021-04-16 | 思特威(上海)电子科技股份有限公司 | Image sensor with four-pixel structure and reading control method |
| CN110336953A (en) * | 2019-07-02 | 2019-10-15 | 思特威(上海)电子科技有限公司 | Quaternary dot structure imaging sensor and reading and control method thereof |
| CN110334652A (en) * | 2019-07-05 | 2019-10-15 | 无锡睿勤科技有限公司 | Image processing method, electronic equipment and storage medium |
| CN110334652B (en) * | 2019-07-05 | 2022-06-07 | 无锡睿勤科技有限公司 | Image processing method, electronic device, and storage medium |
| CN110418088A (en) * | 2019-08-14 | 2019-11-05 | Oppo广东移动通信有限公司 | Pixel structure, image sensor and terminal |
| CN110418088B (en) * | 2019-08-14 | 2021-11-16 | Oppo广东移动通信有限公司 | Pixel structure, image sensor and terminal |
| CN110730318B (en) * | 2019-09-30 | 2022-01-04 | 上海集成电路研发中心有限公司 | Pixel unit and pixel array for eliminating moire fringes |
| CN110730318A (en) * | 2019-09-30 | 2020-01-24 | 上海集成电路研发中心有限公司 | Pixel unit and pixel array for eliminating moire fringes |
| CN113852772A (en) * | 2020-06-25 | 2021-12-28 | 爱思开海力士有限公司 | Image sensor with a plurality of pixels |
| CN114339085B (en) * | 2020-09-30 | 2025-03-18 | 思特威(上海)电子科技股份有限公司 | TOF image sensor pixel structure and ranging system |
| CN114339085A (en) * | 2020-09-30 | 2022-04-12 | 思特威(上海)电子科技股份有限公司 | TOF image sensor pixel structure and ranging system |
| CN112738433A (en) * | 2020-12-29 | 2021-04-30 | 上海集成电路装备材料产业创新中心有限公司 | Test circuit for complete depletion voltage of any pixel of CIS pixel array |
| CN113676651A (en) * | 2021-08-25 | 2021-11-19 | 维沃移动通信有限公司 | Image sensor, control method, control device, electronic apparatus, and storage medium |
| CN113676652A (en) * | 2021-08-25 | 2021-11-19 | 维沃移动通信有限公司 | Image sensor, control method, control device, electronic apparatus, and storage medium |
| CN113709391B (en) * | 2021-08-26 | 2023-12-05 | 锐芯微电子股份有限公司 | CMOS image sensor and reading method thereof |
| CN113709391A (en) * | 2021-08-26 | 2021-11-26 | 锐芯微电子股份有限公司 | CMOS image sensor and reading method thereof |
| CN114363537B (en) * | 2022-01-12 | 2024-04-26 | 锐芯微电子股份有限公司 | Pixel structure and array, circuit and method, image sensor, and storage medium |
| CN114363537A (en) * | 2022-01-12 | 2022-04-15 | 锐芯微电子股份有限公司 | Pixel structure and array, circuit and method, image sensor, and storage medium |
| CN115623343A (en) * | 2022-09-30 | 2023-01-17 | 北京大学 | In-sensor computation pixel unit, in-sensor computation array structure, operation method of in-sensor computation array structure and image sensing operation system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108462841A (en) | Pel array and imaging sensor | |
| KR101899754B1 (en) | Image sensor, imaging apparatus, electronic device, and imaging method | |
| KR102678455B1 (en) | Image sensor | |
| CN101926162B (en) | Sampling and readout of image sensor | |
| CN204633945U (en) | Image sensor, imaging system and processor system | |
| JP4881987B2 (en) | Solid-state imaging device and imaging device | |
| KR101929596B1 (en) | Solid-state imaging device and camera system | |
| US9686486B2 (en) | Multi-resolution pixel architecture with shared floating diffusion nodes | |
| US11652131B2 (en) | Layout design of dual row select structure | |
| US20100149393A1 (en) | Increasing the resolution of color sub-pixel arrays | |
| CN101854488A (en) | Solid-state imaging device, signal processing method of solid-state imaging device, and imaging device | |
| US12044869B2 (en) | Image sensor and electronic camera | |
| CN102917185A (en) | Solid-state imaging device and imaging device | |
| KR20070033030A (en) | Rod and Cone Response Sensors | |
| WO2019208412A1 (en) | Imaging device and driving method of imaging device | |
| EP0933950B1 (en) | Colour image pickup apparatus and method | |
| CN207251823U (en) | Imaging device and imaging system | |
| KR20140039953A (en) | Solid-state imaging device, camera module, and imaging method | |
| KR20210047009A (en) | Image device | |
| TWI820565B (en) | Bitline control supporting binning mode for pixel arrays with phase detection autofocus and image sensing photodiodes | |
| CN110557587B (en) | Image sensor and method of operating the same | |
| CN109804617B (en) | Image sensor and control method thereof | |
| US20100182474A1 (en) | Image capture device comprising pixel combination means | |
| US12184956B2 (en) | Color-infrared sensor with a low power binning readout mode | |
| US20240056699A1 (en) | Imaging device and electronic apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Room 612, 6th floor, No. 111 Building, Xiangke Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai, 201203 Applicant after: STEVE (SHANGHAI) ELECTRONIC TECHNOLOGY CO., LTD Address before: Room 612, 6th floor, No. 111 Building, Xiangke Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai, 201203 Applicant before: Shanghai Ye Core Electronic Technology Co. Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180828 |