CN108461626A - Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device - Google Patents
Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device Download PDFInfo
- Publication number
- CN108461626A CN108461626A CN201810404396.4A CN201810404396A CN108461626A CN 108461626 A CN108461626 A CN 108461626A CN 201810404396 A CN201810404396 A CN 201810404396A CN 108461626 A CN108461626 A CN 108461626A
- Authority
- CN
- China
- Prior art keywords
- layer
- photoresist
- finger
- silica
- temperature compensating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The application discloses a temperature compensation layer flattening method of a temperature compensation type surface acoustic wave device, which comprises the steps of manufacturing a first layer of silicon dioxide on a piezoelectric wafer; coating a photoresist layer on the first layer of silicon dioxide; exposing and developing the photoresist layer to enable the photoresist layer to form a finger structure, wherein in the finger structure formed by the photoresist, the upper end surface of the first layer of silicon dioxide is exposed from the finger gap; carrying out ultraviolet curing on the exposed and developed photoresist; etching the first layer of silicon dioxide to form a silicon dioxide finger structure; coating films in the gaps of the silicon dioxide finger strips and on the upper end surfaces of the photoresist finger strips to form metal with the same thickness as the first layer of silicon dioxide; stripping off all the photoresist and the metal on the photoresist; a second layer of silicon dioxide is fabricated on the upper end faces of the silicon dioxide fingers and the metal therebetween. Compared with the prior art, the chemical mechanical planarization treatment is not needed, the treatment cost is low, and splintering is not easy to occur.
Description
Technical field
The present invention relates to SAW device processing technique field more particularly to a kind of temperature compensating type SAW devices
Temperature compensating layer flattening method.
Background technology
With the non-renewable feature of the further development and electromagnetic spectrum resource of system, interfered between electronic system frequency spectrum
Efficient with frequency spectrum resource is filtered using the key technical problem for having become current system development and application, especially surface acoustic wave
In the band limits of device covering, contradiction is more prominent.For this purpose, filtering the surface acoustic wave of main devices as the frequency range radiofrequency signal
Filter must just propose the high-precision spectrum control technology for meeting System Development new demand, such as temperature stability issues.Wide temperature
SAW filter frequency stability of temperature problem under range, it has also become current SAW filter technology development and device
One of the critical issue of part application.
For from demand, frequency more high-frequency temperature drift is bigger, the demand to temperature compensating type SAW device
To be more urgent.In radar application, because array element is more, there is hot unbalanced phenomena at work, surface acoustic wave will be made to filter
Phase equalization between wave device is deteriorated, and causes the calibration difficulty of radar to increase, therefore to the phase stabilization of SAW filter
More stringent requirements are proposed for property.Because frequency resource is limited in communication system, temperature compensating type SAW device filter is needed
Ask also very urgent.For the SAW device of realization temperature compensating type, need first to make interdigital transducer on piezoelectric chip,
Then the certain thickness temperature compensating layer of last layer is plated again, and generally use silica is as compensation layer in the prior art.It completes
After temperature compensating layer plated film, because being influenced by the silicon dioxide thickness on metal finger, the meeting of temperature-compensating layer surface is concave-convex not
It is flat, the electrical property of severe exacerbation device.The processing method of domestic and international mainstream is that temperature-compensating layer surface carries out CMP（chemical
Mechanical planarization, chemical-mechanical planarization）Processing, but CMP tool is expensive, and it is easy to cause sliver.
Therefore, how to reduce the cost of temperature compensating layer surface planarisation processing and while reducing planarization process occurs
Sliver becomes those skilled in the art's urgent problem.
Invention content
For deficiencies of the prior art, the application problem to be solved is：Reduce temperature-compensating layer surface
The sliver that the cost of planarization process and while reducing planarization process occur.
In order to solve the above technical problems, the application uses the following technical solution：
A kind of temperature compensating layer flattening method of temperature compensating type SAW device, including：
First layer silica is manufactured on piezoelectric chip；
Photoresist layer is coated on first layer silica；
Development is exposed to photoresist layer, make photoresist layer formed finger structure, photoresist formed finger structure in, finger
Expose the upper surface of first layer silica, and the upper surface of photoresist finger fully shading light photoresist in the vertical direction in gap
The lower face of finger；
Ultra-violet curing is carried out to the photoresist after exposure imaging；
Etching is not photo-etched the first layer silica that glue finger upper surface is blocked in the vertical direction, makes first layer silica
Form silica finger structure；
In silica finger gap and the upper surface of photoresist finger carries out plated film, is formed and first layer silicon dioxide thickness
Identical metal；
Stripping removes the metal on all photoresists and photoresist；
Silica finger and its between metal upper surface on manufacture second layer silica, first layer silica and
Second layer silica is temperature compensating type function silica.
Preferably, the shape of the vertical cross-section of photoresist finger is up big and down small inverted trapezoidal.
Preferably, in the inverted trapezoidal that the vertical cross-section of photoresist finger is formed, the length on longer bottom edge and shorter bottom
The ratio range of the length on side is 1.05 to 1.2.
Preferably, when ultra-violet curing, cured using ultraviolet light all band light source, and piezo crystals are kept in solidification process
The temperature of piece is at 50~120 DEG C.
Preferably, the metal on all photoresists and photoresist, the solvent used are removed using wet method stripping removal technique
Including acetone and/or N-Methyl pyrrolidone, and solvent temperature is maintained within the scope of 25~90 DEG C.
Preferably, first layer silica is performed etching to form finger structure using dry etching.
Preferably, using electron beam coater in silica finger gap and the upper surface of photoresist finger carry out
Plated film.
Preferably, when manufacturing two layers of silica, preparation temperature controls within the scope of 25~300 DEG C.
In conclusion this application discloses a kind of temperature compensating layer planarization sides of temperature compensating type SAW device
Method, including first layer silica is manufactured on piezoelectric chip；Photoresist layer is coated on first layer silica；To photoresist
Layer be exposed development, make photoresist layer formed finger structure, photoresist formed finger structure in, finger gap exposing first
The upper surface of layer silica, and the lower end of the upper surface of photoresist finger fully shading light photoresist finger in the vertical direction
Face；Ultra-violet curing is carried out to the photoresist after exposure imaging；Etching is not photo-etched glue finger upper surface and blocks in the vertical direction
First layer silica, make first layer silica formed silica finger structure；In silica finger gap and
The upper surface of photoresist finger carries out plated film, forms metal identical with first layer silicon dioxide thickness；Stripping removes all light
Metal in photoresist and photoresist；Silica finger and its between metal upper surface on manufacture second layer titanium dioxide
Silicon, first layer silica and second layer silica are temperature compensating type function silica.Compared with prior art, originally
Without chemical mechanical planarization, processing cost is low and is less prone to sliver for application.
Description of the drawings
In order to keep the purpose, technical scheme and advantage of invention clearer, the application is made into one below in conjunction with attached drawing
The detailed description of step, wherein：
Fig. 1 is a kind of flow of the temperature compensating layer flattening method of temperature compensating type SAW device disclosed in the present application
Figure；
Fig. 2 is the structural schematic diagram of the piezoelectric chip after cleaning；
Fig. 3 is the structural schematic diagram manufactured after first layer silica；
Fig. 4 is the structural schematic diagram coated after photoresist；
Fig. 5 is that photoresist is exposed to the structural schematic diagram after development；
Fig. 6 is the structural schematic diagram for carrying out ultra-violet curing；
Fig. 7 is the structural schematic diagram after being performed etching to first layer silica；
Fig. 8 is the structural schematic diagram carried out after metal coating；
Fig. 9 is the structural schematic diagram after the metal film on stripping removal photoresist and photoresist；
Figure 10 is the structural schematic diagram manufactured after second layer silica.
Reference sign：Piezoelectric chip 1, first layer silica 2, photoresist 3, ultraviolet light 4, heating source 5, metal film
6, second layer silica 7.
Specific implementation mode
The application is described in further detail below in conjunction with the accompanying drawings.
As shown in Figure 1, this application discloses a kind of temperature compensating layer planarization sides of temperature compensating type SAW device
Method, including：
S101, first layer silica 2 is manufactured on piezoelectric chip 1；
It should be noted that when piezoelectric chip 1 manufactures first layer silica 2, first piezoelectric chip 1 should be cleaned,
Piezoelectric chip 1 after cleaning is as shown in Figure 2.First layer silica 2 is remanufactured later, as shown in Figure 3.Temperature compensating type function
Silica is material commonly used in the art, and details are not described herein.
The thickness of metal between the thickness of first layer silica 2 and silica finger in subsequent step is identical.First root
The thickness that design metal is needed according to product, further according to the thickness manufacture first layer silica 2 of metal.In order to meet planarization
It needs, the deviation of the thickness of first layer silica 2 and the thickness of metal needs to control within 1%.And silica finger
Side is perpendicular to the upper surface of piezoelectric chip 1, in the cross-section structure of remaining silica sections, vertical direction and level side
To angle should control within 88-90 °, ensure metal-coated membrane 6 when, metal can be filled up completely into silica finger it
Between gap, to ensure effect temperature compensation.
S102,3 layers of photoresist is coated on first layer silica 2；As shown in Figure 4.
S103, to photoresist 3 layers be exposed development, make 3 layers of photoresist formation finger structure, the finger that photoresist 3 is formed
In structure, the upper surface of first layer silica 2 is exposed in finger gap, and the upper surface of 3 finger of photoresist is in vertical direction
The lower face of upper 3 finger of fully shading light photoresist；As shown in Figure 5.
In the forming process of photoresist 3, single layer glue, the double-deck glue or multilayer glue technology can be used.
S104, ultra-violet curing is carried out to the photoresist 3 after exposure imaging；As shown in Figure 6.
After exposure imaging, needs to carry out ultra-violet curing, photoresist 3 is made to harden, be convenient for subsequent processing.Because solid
During dry etching after change, backflow phenomenon can occur for photoresist 3, if carrying out ultra-violet curing during heating can keep away
Exempt from backflow phenomenon
S105, etching are not photo-etched the first layer silica 2 that 3 finger upper surface of glue is blocked in the vertical direction, make first layer
Silica 2 forms silica finger structure；As shown with 7.
S106, in silica finger gap and the upper surface of 3 finger of photoresist carry out plated film, formed with first layer two
The identical metal of 2 thickness of silica；As shown in Figure 8.
The metal plated herein includes but are not limited to aluminium, aluminium copper, titanium or copper.
S107, stripping remove the metal on all photoresists 3 and photoresist 3；As shown in Figure 9.
S108, silica finger and its between metal upper surface on manufacture second layer silica 7, first layer
Silica 2 and second layer silica 7 are temperature compensating type function silica；As shown in Figure 10.
Compared with using CMP to realize temperature compensating layer planarization in the prior art, temperature compensating type sound disclosed in the present application
It is existing ripe skill that the temperature compensating layer flattening method of surface wave device, which need not use CMP, required equipment and technique,
Art, therefore cost is lower, and it is not likely to produce sliver.CMP is chemical mechanical polishing, for being easy the piezoelectric chip 1 of sliver,
Little by little mechanical stress is easy for making chip sliver, at the same CMP it is expensive nor surface acoustic wave industry standard device, and this Shen
Conventional equipment can be used to complete all working in the method please provided.
When it is implemented, the shape of the vertical cross-section of 3 finger of photoresist is up big and down small trapezoidal.
As shown in figure 5, being up big and down small trapezoidal by the vertical cross-section of making of 3 finger of photoresist, it is convenient for follow-up photoresist 3
Stripping removal.
When it is implemented, 3 finger of photoresist vertical cross-section formed it is trapezoidal in, the length on longer bottom edge with it is shorter
The ratio range of the length on bottom edge is 1.05 to 1.2.
The difference in length on the section bottom edge of photoresist 3 is bigger, is more easily stripped removal, but if smaller bottom edge, i.e. court
Bottom edge to first layer silica 2 is too small, then the contact area of photoresist 3 and first layer silica 2 will be too small, it can
It can will appear that the silica angle after the case where falling off in process and dry etching silica is inappropriate to ask
Topic, therefore, the ratio range of the length on longer bottom edge and the length on shorter bottom edge are advisable for 1.05 to 1.2.
When it is implemented, when ultra-violet curing, cured using ultraviolet light all band light source, and keeps pressure in solidification process
The temperature of electric chip 1 is at 50~120 DEG C.
Because during dry etching after hardening, backflow phenomenon can occur for photoresist 3, if during heating
It carries out ultra-violet curing and can avoid backflow phenomenon.
When it is implemented, performing etching to form finger structure to first layer silica 2 using dry etching.
The etching agent of dry etching is plasma, is to be reacted using plasma and surface film, forms volatility object
Matter, or directly bombardment film surface are allowed to the technique being corroded.Anisotropic etching can be realized compared with wet etching, to protect
Demonstrate,prove the fidelity after fine diagrams transfer.
When it is implemented, using electron beam coater in the gap between silica finger and 3 finger of photoresist
Upper surface carries out plated film.
When it is implemented, removing the metal on all photoresists 3 and photoresist 3 using wet method stripping removal technique, use
Solvent include acetone and/or N-Methyl pyrrolidone, and solvent temperature is maintained within the scope of 25~90 DEG C.
Compared with dry method stripping removal, the effect using wet method stripping removal is more preferable.
When it is implemented, when manufacturing two layers of silica, preparation temperature controls within the scope of 25~300 DEG C.
Finally illustrate, above example is only to illustrate the technical solution of the application and unrestricted, although passing through ginseng
The application is described according to the preferred embodiment of the application, it should be appreciated by those of ordinary skill in the art that can
To make various changes to it in the form and details, without departing from the application defined by the appended claims
Spirit and scope.
Claims (8)
1. a kind of temperature compensating layer flattening method of temperature compensating type SAW device, which is characterized in that including：
First layer silica is manufactured on piezoelectric chip；
Photoresist layer is coated on first layer silica；
Development is exposed to photoresist layer, make photoresist layer formed finger structure, photoresist formed finger structure in, finger
Expose the upper surface of first layer silica, and the upper surface of photoresist finger fully shading light photoresist in the vertical direction in gap
The lower face of finger；
Ultra-violet curing is carried out to the photoresist after exposure imaging；
Etching is not photo-etched the first layer silica that glue finger upper surface is blocked in the vertical direction, makes first layer silica
Form silica finger structure；
In silica finger gap and the upper surface of photoresist finger carries out plated film, is formed and first layer silicon dioxide thickness
Identical metal；
Stripping removes the metal on all photoresists and photoresist；
Silica finger and its between metal upper surface on manufacture second layer silica, first layer silica and
Second layer silica is temperature compensating type function silica.
2. the temperature compensating layer flattening method of temperature compensating type SAW device as described in claim 1, feature exist
In the shape of the vertical cross-section of photoresist finger is up big and down small inverted trapezoidal.
3. the temperature compensating layer flattening method of temperature compensating type SAW device as claimed in claim 2, feature exist
In, in the inverted trapezoidal of the vertical cross-section formation of photoresist finger, the ratio of the length on longer bottom edge and the length on shorter bottom edge
Value ranging from 1.05 to 1.2.
4. the temperature compensating layer flattening method of temperature compensating type SAW device as described in claim 1, feature exist
When, ultra-violet curing, cured using ultraviolet light all band light source, and keeps the temperature of piezoelectric chip 50 in solidification process
~120 DEG C.
5. the temperature compensating layer flattening method of temperature compensating type SAW device as described in claim 1, feature exist
In, the metal on all photoresists and photoresist is removed using wet method stripping removal technique, the solvent used include acetone and/or
N-Methyl pyrrolidone, and solvent temperature is maintained within the scope of 25~90 DEG C.
6. the temperature compensating layer flattening method of temperature compensating type SAW device as described in claim 1, feature exist
In performing etching to form finger structure to first layer silica using dry etching.
7. the temperature compensating layer flattening method of temperature compensating type SAW device as described in claim 1, feature exist
In, using electron beam coater in silica finger gap and the upper surface of photoresist finger carry out plated film.
8. the temperature compensating layer flattening method of temperature compensating type SAW device as described in claim 1, feature exist
In when manufacturing two layers of silica, preparation temperature controls within the scope of 25~300 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810404396.4A CN108461626A (en) | 2018-04-28 | 2018-04-28 | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810404396.4A CN108461626A (en) | 2018-04-28 | 2018-04-28 | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108461626A true CN108461626A (en) | 2018-08-28 |
Family
ID=63236383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810404396.4A Pending CN108461626A (en) | 2018-04-28 | 2018-04-28 | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108461626A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109361372A (en) * | 2018-10-12 | 2019-02-19 | 中国电子科技集团公司第二十六研究所 | Temperature compensation type low-loss ultra-wideband resonator and filter |
| CN110708035A (en) * | 2019-10-21 | 2020-01-17 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
| CN111146330A (en) * | 2019-12-30 | 2020-05-12 | 北京中科飞鸿科技股份有限公司 | Preparation method of passivation layer of copper film surface acoustic wave filter |
| CN112436815A (en) * | 2020-11-19 | 2021-03-02 | 广东广纳芯科技有限公司 | Temperature compensation type surface acoustic wave device and manufacturing method thereof |
| CN112803911A (en) * | 2021-01-05 | 2021-05-14 | 无锡市好达电子股份有限公司 | Preparation method of surface acoustic wave transducer with temperature compensation function |
| CN113162580A (en) * | 2021-04-30 | 2021-07-23 | 江苏卓胜微电子股份有限公司 | Method for manufacturing acoustic surface wave resonator |
| CN115940862A (en) * | 2023-02-13 | 2023-04-07 | 深圳新声半导体有限公司 | Method for manufacturing surface acoustic wave filter and surface acoustic wave filter |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040140734A1 (en) * | 2003-01-20 | 2004-07-22 | Murata Manufacturing Co., Ltd. | End surface reflection type surface acoustic wave device |
| JP2004260625A (en) * | 2003-02-26 | 2004-09-16 | Murata Mfg Co Ltd | Surface acoustic wave device |
| US20050127794A1 (en) * | 2003-12-15 | 2005-06-16 | Alps Electric Co., Ltd. | Surface acoustic wave device and manufacturing method thereof |
| JP2008067289A (en) * | 2006-09-11 | 2008-03-21 | Fujitsu Media Device Kk | Elastic wave device and filter |
| CN107871813A (en) * | 2017-11-17 | 2018-04-03 | 中电科技集团重庆声光电有限公司 | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device |
-
2018
- 2018-04-28 CN CN201810404396.4A patent/CN108461626A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040140734A1 (en) * | 2003-01-20 | 2004-07-22 | Murata Manufacturing Co., Ltd. | End surface reflection type surface acoustic wave device |
| JP2004260625A (en) * | 2003-02-26 | 2004-09-16 | Murata Mfg Co Ltd | Surface acoustic wave device |
| US20050127794A1 (en) * | 2003-12-15 | 2005-06-16 | Alps Electric Co., Ltd. | Surface acoustic wave device and manufacturing method thereof |
| JP2008067289A (en) * | 2006-09-11 | 2008-03-21 | Fujitsu Media Device Kk | Elastic wave device and filter |
| CN107871813A (en) * | 2017-11-17 | 2018-04-03 | 中电科技集团重庆声光电有限公司 | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109361372A (en) * | 2018-10-12 | 2019-02-19 | 中国电子科技集团公司第二十六研究所 | Temperature compensation type low-loss ultra-wideband resonator and filter |
| CN110708035A (en) * | 2019-10-21 | 2020-01-17 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
| CN110708035B (en) * | 2019-10-21 | 2022-04-01 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
| CN111146330A (en) * | 2019-12-30 | 2020-05-12 | 北京中科飞鸿科技股份有限公司 | Preparation method of passivation layer of copper film surface acoustic wave filter |
| CN112436815A (en) * | 2020-11-19 | 2021-03-02 | 广东广纳芯科技有限公司 | Temperature compensation type surface acoustic wave device and manufacturing method thereof |
| CN112436815B (en) * | 2020-11-19 | 2024-03-15 | 广东广纳芯科技有限公司 | Temperature-compensated surface acoustic wave device and method of manufacturing the same |
| CN112803911A (en) * | 2021-01-05 | 2021-05-14 | 无锡市好达电子股份有限公司 | Preparation method of surface acoustic wave transducer with temperature compensation function |
| CN112803911B (en) * | 2021-01-05 | 2023-05-26 | 无锡市好达电子股份有限公司 | Preparation method of surface acoustic wave transducer with temperature compensation function |
| CN113162580A (en) * | 2021-04-30 | 2021-07-23 | 江苏卓胜微电子股份有限公司 | Method for manufacturing acoustic surface wave resonator |
| CN115940862A (en) * | 2023-02-13 | 2023-04-07 | 深圳新声半导体有限公司 | Method for manufacturing surface acoustic wave filter and surface acoustic wave filter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108461626A (en) | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device | |
| US9015914B2 (en) | Method for manufacturing electronic component | |
| EP3451363B1 (en) | Method for manufacturing composite wafer | |
| EP3490144A1 (en) | Method for manufacturing surface acoustic wave device composite substrate | |
| CN111726101B (en) | TC-SAW device and manufacturing method thereof | |
| JP2011120241A (en) | Method for manufacturing bulk wave acoustic resonator of fbar type | |
| CN111919285A (en) | Process for manufacturing a substrate for a radio frequency device | |
| CN108768334B (en) | Manufacturing method of TC-SAW IDT copper process | |
| CN107871813B (en) | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device | |
| WO2022198949A1 (en) | Method for manufacturing semiconductor structure | |
| CN104716017B (en) | Improve the method for crystal round fringes processing | |
| CN110708035B (en) | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device | |
| CN112653409B (en) | Manufacturing method for manufacturing metal electrode | |
| TW201004141A (en) | High frequency surface acoustic wave device | |
| JP7548999B2 (en) | Electronic components and their manufacturing method | |
| CN112436815B (en) | Temperature-compensated surface acoustic wave device and method of manufacturing the same | |
| CN112491380B (en) | Method for manufacturing metal electrode of TC-SAW | |
| JP2001053569A (en) | Manufacturing method of surface acoustic wave device | |
| KR20020061260A (en) | Semiconductor manufacturing method for reducing particle | |
| CN113067560B (en) | Novel SAW filter process manufacturing flow | |
| CN110417376A (en) | A kind of preparation method of 49S quartz crystal resonator | |
| KR19990080608A (en) | Method of manufacturing saw filter | |
| CN104752151B (en) | A kind of integrated passive devices and its manufacturing method | |
| CN116667810A (en) | High-frequency Lamb wave resonator and preparation method thereof | |
| CN114751366A (en) | MEMS high step processing and manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220524 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Applicant after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Applicant before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.26 Research Institute |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180828 |