CN108461616B - Packaging method of thermoelectric separation heat dissipation structure for high-power L ED - Google Patents
Packaging method of thermoelectric separation heat dissipation structure for high-power L ED Download PDFInfo
- Publication number
- CN108461616B CN108461616B CN201810490997.1A CN201810490997A CN108461616B CN 108461616 B CN108461616 B CN 108461616B CN 201810490997 A CN201810490997 A CN 201810490997A CN 108461616 B CN108461616 B CN 108461616B
- Authority
- CN
- China
- Prior art keywords
- heat dissipation
- layer
- copper
- composite
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 18
- 238000000926 separation method Methods 0.000 title claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000011889 copper foil Substances 0.000 claims abstract description 29
- 238000003801 milling Methods 0.000 claims abstract description 19
- 239000002131 composite material Substances 0.000 claims description 50
- 229910052802 copper Inorganic materials 0.000 claims description 45
- 239000010949 copper Substances 0.000 claims description 45
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- 238000007747 plating Methods 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 238000005476 soldering Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000011324 bead Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000012782 phase change material Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
技术领域technical field
本发明涉及大功率LED散热技术领域,尤其涉及一种大功率LED用热电分离散热结构的封装方法。The invention relates to the technical field of heat dissipation of high-power LEDs, in particular to a packaging method of a thermoelectric separation heat dissipation structure for high-power LEDs.
背景技术Background technique
随着科学技术的快速发展,人们对路灯照明的发光功率要求越来越高。LED作为一种优秀的半导体光电器件,以其体积小、耗电量低、使用寿命长、环保灯优点,成为新一代理想的固态节能照明光源。随着LED向高光强、高功率发展,LED的散热问题日渐突出。散热问题影响到LED的光输出特性和器件的寿命,是大功率LED封装中的关键问题。如果封装散热不良,会使芯片温度升高,引起应力分布不均、寿命缩短、荧光粉转换效率下降导致芯片出光效率下降。With the rapid development of science and technology, people have higher and higher requirements for the luminous power of street lighting. As an excellent semiconductor optoelectronic device, LED has become an ideal solid-state energy-saving lighting source for a new generation due to its advantages of small size, low power consumption, long service life and environmental protection. With the development of LEDs to high light intensity and high power, the problem of heat dissipation of LEDs has become increasingly prominent. The problem of heat dissipation affects the light output characteristics of the LED and the life of the device, and is a key issue in high-power LED packaging. If the heat dissipation of the package is poor, the temperature of the chip will rise, resulting in uneven stress distribution, shortened life, and reduced phosphor conversion efficiency, resulting in a decrease in chip light extraction efficiency.
目前,散热问题是限制LED发展的主要因素。Narendran等人通过实验证实:LED寿命随LED芯片结点温度的增大成指数形式下降,突破极限温度则随时可能失效。所以,散热问题是整个大功率LED行业面临的一个重大技术瓶颈。At present, the problem of heat dissipation is the main factor limiting the development of LEDs. Narendran et al. have confirmed through experiments that the LED lifespan decreases exponentially with the increase of the LED chip junction temperature, and it may fail at any time when the extreme temperature is exceeded. Therefore, the problem of heat dissipation is a major technical bottleneck faced by the entire high-power LED industry.
现有技术中,大功率LED灯珠直接封装到传统铝基覆铜板上(从上到下依次为铜箔、绝缘层和铝板),由于LED芯片产生的热量需要通过高热阻的绝缘层,导致散热效率低下散热不良,会使芯片温度升高,引起应力分布不均、寿命缩短、荧光粉转换效率下降,导致芯片出光效率下降。In the prior art, high-power LED lamp beads are directly packaged on traditional aluminum-based copper clad boards (copper foil, insulating layer and aluminum plate in sequence from top to bottom). Low heat dissipation efficiency and poor heat dissipation will increase the temperature of the chip, cause uneven stress distribution, shorten the lifespan, and decrease the conversion efficiency of phosphors, resulting in a decrease in the light extraction efficiency of the chip.
故,针对现有技术的缺陷,实有必要提出一种技术方案以解决现有技术存在的技术问题。Therefore, in view of the defects of the prior art, it is necessary to propose a technical solution to solve the technical problems existing in the prior art.
发明内容SUMMARY OF THE INVENTION
有鉴于此,确有必要提供一种散热性能好的大功率LED用热电分离散热结构的封装方法,从而大幅度降低了大功率LED的热阻,解决大功率LED散热的瓶颈问题。In view of this, it is indeed necessary to provide a packaging method for a high-power LED with a thermoelectric separation heat dissipation structure with good heat dissipation performance, thereby greatly reducing the thermal resistance of the high-power LED and solving the bottleneck problem of heat dissipation of the high-power LED.
为了解决现有技术存在的技术问题,本发明的技术方案如下:In order to solve the technical problems existing in the prior art, the technical scheme of the present invention is as follows:
一种大功率LED用热电分离散热结构的封装方法,其特征在于,包括以下步骤:A packaging method for a high-power LED with a thermoelectric separation heat dissipation structure, characterized in that it comprises the following steps:
将经过双面阳极氧化的铝板上下两面镀铜形成复合散热基板;A composite heat-dissipating substrate is formed by plating copper on the upper and lower sides of the double-sided anodized aluminum plate;
将复合散热基板上表面依次覆上绝缘层和铜箔层并压合在一起形成覆铜板;The upper surface of the composite heat dissipation substrate is sequentially covered with an insulating layer and a copper foil layer and pressed together to form a copper clad laminate;
在覆铜板的上表面铣掉与LED底座对应的铜箔和绝缘层形成缺口A和缺口B;On the upper surface of the CCL, the copper foil and insulating layer corresponding to the LED base are milled off to form a gap A and a gap B;
在缺口A铣掉的绝缘层位置中设置铜层;A copper layer is arranged in the insulating layer position milled from the notch A;
将LED芯片设置在LED底座形成LED封装结构,并将底座设置在上述步骤制备的覆铜板上使底座与复合散热基板直接连接,从而形成热电分离散热结构。The LED chip is placed on the LED base to form an LED package structure, and the base is placed on the copper clad plate prepared in the above steps to directly connect the base to the composite heat dissipation substrate, thereby forming a thermoelectric separation heat dissipation structure.
作为优选的技术方案,复合散热基上依次设置绝缘层和铜箔层,通过铣工艺去除部分绝缘层材料暴露出所述散热基板并形成缺口A以及通过铣工艺在该缺口A两侧通过铣工艺去除部分铜箔层材料暴露出所述绝缘层并形成缺口B。As a preferred technical solution, an insulating layer and a copper foil layer are sequentially arranged on the composite heat dissipation base, a part of the insulating layer material is removed by a milling process to expose the heat dissipation substrate and a gap A is formed, and a milling process is performed on both sides of the gap A by a milling process. Removing part of the copper foil layer material exposes the insulating layer and forms a gap B.
采用上述技术方案,通过结构上的改进,使LED封装结构能够直接卡合设置缺口A和缺口B,由于LED散热底座直接与散热基板相连接,从而能够将LED芯片产生的热量直接传导到散热基板上,避免了传统散热基板中的高热阻绝缘层,大幅度降低了大功率LED的热阻。By adopting the above technical solution, through the structural improvement, the LED package structure can be directly fitted with the gap A and the gap B. Since the LED heat dissipation base is directly connected to the heat dissipation substrate, the heat generated by the LED chip can be directly conducted to the heat dissipation substrate On the top, the high thermal resistance insulating layer in the traditional heat dissipation substrate is avoided, and the thermal resistance of the high-power LED is greatly reduced.
作为优选的技术方案,LED封装结构设置在与其相匹配的所述缺口A和缺口B中,使LED底座与复合散热基板物理连接,设置在LED底座上的LED芯片通过电极与铜箔层电气连接;As a preferred technical solution, the LED package structure is arranged in the matching gap A and gap B, so that the LED base is physically connected to the composite heat dissipation substrate, and the LED chip disposed on the LED base is electrically connected to the copper foil layer through electrodes. ;
所述复合散热基板包括复合铝层以及设置该复合铝层两面上的复合铜层。The composite heat dissipation substrate includes a composite aluminum layer and a composite copper layer disposed on both sides of the composite aluminum layer.
作为优选的技术方案,所述铜层与所述绝缘层厚度相等并与LED底座以焊接方式连接。As a preferred technical solution, the copper layer and the insulating layer have the same thickness and are connected to the LED base by welding.
上述技术方案中,在铣掉绝缘层的缺口A上,电镀上一层与绝缘层等厚度的铜层,此镀铜会与LED芯片的陶瓷散热基座封装一起,解决了助焊剂焊接高度不够、铝不好焊接的问题。In the above technical solution, a copper layer with the same thickness as the insulating layer is electroplated on the gap A where the insulating layer is milled off. This copper plating will be packaged with the ceramic heat dissipation base of the LED chip, which solves the problem of insufficient soldering height of the flux. , Aluminum is not easy to weld.
作为优选的技术方案,所述铜层以电镀的方式设置在所述缺口A中。As a preferred technical solution, the copper layer is disposed in the notch A by electroplating.
作为优选的技术方案,复合散热基板的一面设置LED底座,另一面设置散热器。As a preferred technical solution, one side of the composite heat dissipation substrate is provided with an LED base, and the other side is provided with a heat sink.
作为优选的技术方案,所述散热器以焊接方式与所述复合散热基板相连接。As a preferred technical solution, the heat sink is connected to the composite heat dissipation substrate by welding.
上述技术方案中,散热基板是由铝板上下两面镀铜制造而成的,同时改进了基板与LED灯珠的封装方式和基板与散热器的连接方式,大幅度降低了大功率LED的热阻。In the above technical solution, the heat dissipation substrate is made of copper plating on the upper and lower sides of the aluminum plate. At the same time, the packaging method between the substrate and the LED lamp beads and the connection method between the substrate and the heat sink are improved, and the thermal resistance of the high-power LED is greatly reduced.
同时,复合板的下表面铜与LED灯的散热器通过锡焊直接焊接,在解决了铝的不耐焊锡性的同时,也改进了传统用螺栓、导热硅或相变材料的高热阻连接方法,直接焊接可以大幅度降低了大功率LED的热阻。At the same time, the copper on the lower surface of the composite board and the radiator of the LED lamp are directly welded by soldering, which not only solves the inability of aluminum to solder tin, but also improves the traditional high thermal resistance connection method using bolts, thermal conductive silicon or phase change materials. , Direct welding can greatly reduce the thermal resistance of high-power LEDs.
作为优选的技术方案,复合铜层以电镀的方式设置在所述复合铝层上。As a preferred technical solution, the composite copper layer is provided on the composite aluminum layer by means of electroplating.
作为优选的技术方案,复合铜层以层压的方式设置在复合铝层上。As a preferred technical solution, the composite copper layer is provided on the composite aluminum layer in a laminated manner.
作为优选的技术方案,所述LED底座为LED陶瓷散热基座。As a preferred technical solution, the LED base is an LED ceramic heat dissipation base.
与现有技术相比较,采用本发明的结构,能够将LED芯片产生的热量直接传导到散热基板上,避免了传统散热基板中的高热阻绝缘层,大幅度降低了大功率LED的热阻;同时,改进了基板与LED灯珠的封装方式以及基板与散热器的连接方式,大幅度降低了大功率LED的热阻。另外,基板的下表面铜与LED灯的散热器通过锡焊直接焊接,在解决了铝的不耐焊锡性的同时,也改进了传统用螺栓、导热硅或相变材料的高热阻连接方法,直接焊接可以大幅度降低了大功率LED的热阻。Compared with the prior art, by adopting the structure of the present invention, the heat generated by the LED chip can be directly conducted to the heat-dissipating substrate, avoiding the high thermal resistance insulating layer in the traditional heat-dissipating substrate, and greatly reducing the thermal resistance of the high-power LED; At the same time, the packaging method between the substrate and the LED lamp beads and the connection method between the substrate and the heat sink are improved, which greatly reduces the thermal resistance of the high-power LED. In addition, the copper on the lower surface of the substrate and the radiator of the LED lamp are directly welded by soldering, which not only solves the problem of aluminum's resistance to soldering, but also improves the traditional high thermal resistance connection method using bolts, thermal conductive silicon or phase change materials. Direct soldering can greatly reduce the thermal resistance of high-power LEDs.
附图说明Description of drawings
图1是覆铜板结构示意图。Figure 1 is a schematic diagram of the structure of the copper clad laminate.
图2是本发明中散热基板的结构示意图。FIG. 2 is a schematic structural diagram of a heat dissipation substrate in the present invention.
图3是本发明覆铜板结构示意图。FIG. 3 is a schematic view of the structure of the copper clad laminate of the present invention.
图4是一次铣掉铜箔和绝缘层示意图。Figure 4 is a schematic diagram of milling off the copper foil and insulating layer at one time.
图5是在一次铣的缺口上电镀上一层铜之后的结构示意图。FIG. 5 is a schematic diagram of the structure after electroplating a layer of copper on the notch of one milling process.
图6是二次铣掉铜箔结构示意图。FIG. 6 is a schematic diagram of the structure of the copper foil being milled off twice.
图7是在热电分离散热基板上封装LED与散热器之后的示意图。FIG. 7 is a schematic diagram after the LED and the heat sink are packaged on the thermoelectrically separated heat dissipation substrate.
图中标号:1为铜箔层,2为绝缘层,3为散热基板,31为复合铜层,32为复合铝层,4为在缺口A上铜层,5为焊锡液,601为电极,602为LED芯片,603为底座,604为硅层,7为阻焊层,8为焊锡液,9为散热器,A为一次铣缺口,B为二次铣缺口。Numerals in the figure: 1 is the copper foil layer, 2 is the insulating layer, 3 is the heat dissipation substrate, 31 is the composite copper layer, 32 is the composite aluminum layer, 4 is the copper layer on the gap A, 5 is the solder liquid, 601 is the electrode, 602 is the LED chip, 603 is the base, 604 is the silicon layer, 7 is the solder resist layer, 8 is the solder liquid, 9 is the heat sink, A is the primary milling notch, and B is the secondary milling notch.
如下具体实施例将结合上述附图进一步说明本发明。The following specific embodiments will further illustrate the present invention in conjunction with the above drawings.
具体实施方式Detailed ways
以下将结合附图对本发明提供的技术方案作进一步说明。The technical solutions provided by the present invention will be further described below with reference to the accompanying drawings.
参见图1-7,本发明提供一种大功率LED用热电分离散热结构的封装方法,包括以下步骤:1-7, the present invention provides a packaging method of a thermoelectric separation heat dissipation structure for a high-power LED, including the following steps:
第一步:将经过双面阳极氧化的铝板上下两面镀铜形成复合散热基板。如图2所示。The first step: copper-plating the upper and lower sides of the double-sided anodized aluminum plate to form a composite heat dissipation substrate. as shown in
第二步:将复合散热基板上表面依次覆上绝缘层和铜箔层,然后压合在一起。如图3所示。The second step: cover the upper surface of the composite heat dissipation substrate with an insulating layer and a copper foil layer in turn, and then press them together. As shown in Figure 3.
第三步:一次铣,在覆铜板的上表面铣掉与LED基座对应的铜箔层和绝缘层。如图4所示。Step 3: Once milling, mill off the copper foil layer and insulating layer corresponding to the LED base on the upper surface of the copper clad laminate. As shown in Figure 4.
第四步:在铣掉的绝缘层位置,电镀上与绝缘层等厚度的铜层。如图5所示。Step 4: At the position of the milled insulating layer, electroplate a copper layer with the same thickness as the insulating layer. As shown in Figure 5.
第五步:二次铣,然后向铜箔缺口两侧多铣掉一部分,以增大铜箔与第四步镀铜的距离,增大电弧电压,防止击穿。如图6所示。Step 5: Second milling, and then milling off a part of the copper foil gap on both sides to increase the distance between the copper foil and the copper plating in the fourth step, increase the arc voltage, and prevent breakdown. As shown in Figure 6.
利用以上步骤生产的热电分离散热基板,通过焊锡液、助焊剂,上表面与LED芯片的底座连接,下表面与散热器连接。如图7所示。Using the thermoelectric separation heat dissipation substrate produced by the above steps, the upper surface is connected to the base of the LED chip, and the lower surface is connected to the radiator through solder liquid and flux. As shown in Figure 7.
在一种优选实施方式中,采用上述工艺实现的热电分离散热结构,具体包括散热基板3以及依次设置在该散热基板3上的绝缘层2和铜箔层1,通过铣工艺先后在绝缘层2中形成缺口A以及在铜箔层1中形成缺口B;LED封装结构设置在与其相匹配的所述缺口A和缺口B中,使LED底座603与所述散热基板3相连接,设置在所述LED底座603的LED芯片602通过电极601与所述铜箔层1电气连接。In a preferred embodiment, the thermoelectric separation heat dissipation structure realized by the above process specifically includes a
采用上述技术方案,通过结构上的改进,使LED封装结构能够直接卡合设置缺口A和缺口B,由于LED散热底座直接与散热基板相连接,从而能够将LED芯片产生的热量直接传导到散热基板上,避免了传统散热基板中的高热阻绝缘层,大幅度降低了大功率LED的热阻。By adopting the above technical solution, through the structural improvement, the LED package structure can be directly fitted with the gap A and the gap B. Since the LED heat dissipation base is directly connected to the heat dissipation substrate, the heat generated by the LED chip can be directly conducted to the heat dissipation substrate. On the top, the high thermal resistance insulating layer in the traditional heat dissipation substrate is avoided, and the thermal resistance of the high-power LED is greatly reduced.
在一种优选实施方式中,所述散热基板3为复合基板,包括复合铝层32以及设置该复合铝层32至少一面上的复合铜层31,所述复合铜层31与所述LED底座603以焊接方式连接。In a preferred embodiment, the
在一种优选实施方式中,所述复合铝层32双面设置复合铜层31,在其一面设置LED底座603,另一面设置散热器9。In a preferred embodiment, the
在一种优选实施方式中,所述散热器9以焊接方式与所述复合铜层31相连接。In a preferred embodiment, the
在一种优选实施方式中,本发明提供的大功率LED用热电分离散热结构是由双面阳极氧化铝上下两面镀铜形成复合散热基板,然后依次覆上绝缘层和铜箔,经过一次铣、镀铜、二次铣,然后形成缺口A和B,在铣掉绝缘层的缺口A上,电镀上一层与绝缘层等厚度的铜层,此镀铜会与LED芯片的陶瓷散热基座封装一起,LED芯片产生的热量直接传导到复合散热基板上,避免了传统散热基板中的高热阻绝缘层,大幅度降低了大功率LED的热阻。另外,复合散热基板的下表面铜与LED灯的散热器通过锡焊直接焊接,在解决了铝的不耐焊锡性的同时,也改进了传统用螺栓、导热硅或相变材料的高热阻连接方法,直接焊接可以大幅度降低了大功率LED的热阻。In a preferred embodiment, the thermoelectric separation heat dissipation structure for high-power LEDs provided by the present invention is a composite heat dissipation substrate formed by copper plating on the upper and lower sides of double-sided anodized aluminum, and then sequentially covered with an insulating layer and copper foil, and after one milling, Copper plating, secondary milling, and then forming gaps A and B. On the gap A where the insulating layer is milled, a layer of copper with the same thickness as the insulating layer is electroplated. This copper plating will be packaged with the ceramic heat dissipation base of the LED chip. At the same time, the heat generated by the LED chip is directly conducted to the composite heat dissipation substrate, avoiding the high thermal resistance insulating layer in the traditional heat dissipation substrate, and greatly reducing the thermal resistance of high-power LEDs. In addition, the copper on the lower surface of the composite heat dissipation substrate and the heat sink of the LED lamp are directly welded by soldering, which not only solves the insufficiency of soldering of aluminum, but also improves the high thermal resistance connection of traditional bolts, thermal conductive silicon or phase change materials. method, direct welding can greatly reduce the thermal resistance of high-power LEDs.
优选地,一次铣,在覆铜板的上表面铣掉与LED芯片的陶瓷散热基座对应的铜箔层和绝缘层,露出复合板的上表面铜。Preferably, in one milling, the copper foil layer and the insulating layer corresponding to the ceramic heat dissipation base of the LED chip are milled off on the upper surface of the copper clad laminate to expose the copper on the upper surface of the composite board.
优选地,二次洗,在一次铣的基础上,把铜箔从中间向两侧多铣掉一部分,增大覆铜层与镀铜的距离,增大电弧电压,防止击穿。Preferably, in the second washing, on the basis of the first milling, a part of the copper foil is milled off from the middle to both sides, so as to increase the distance between the copper clad layer and the copper plated layer, increase the arc voltage, and prevent breakdown.
图7为本发明散热基板封装LED与散热器之后的示意图,其工作原理为:LED散热路径是,LED的LED芯片602产生的热量,依次通过焊锡层8,铜层4,复合铜层31,复合铝层32,复合铜层31,焊锡液、助焊剂5,最后通过散热器9将热量散发到外界。本发明的导电通路为:LED电极601,LED的LED芯片602,LED电极601。实现了散热和导电在空间上的分离。7 is a schematic diagram of the heat dissipation substrate of the present invention after the LED and the heat sink are encapsulated. The working principle is: the heat dissipation path of the LED is that the heat generated by the
为了克服现有技术的缺陷,本发明还提出一种大功率LED用热电分离散热封装方法,In order to overcome the defects of the prior art, the present invention also proposes a thermoelectric separation heat dissipation packaging method for high-power LEDs,
以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以对本发明进行若干改进和修饰,这些改进和修饰也落入本发明权利要求的保护范围内。The descriptions of the above embodiments are only used to help understand the method and the core idea of the present invention. It should be pointed out that for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can also be made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments enables any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810490997.1A CN108461616B (en) | 2018-05-21 | 2018-05-21 | Packaging method of thermoelectric separation heat dissipation structure for high-power L ED |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810490997.1A CN108461616B (en) | 2018-05-21 | 2018-05-21 | Packaging method of thermoelectric separation heat dissipation structure for high-power L ED |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108461616A CN108461616A (en) | 2018-08-28 |
CN108461616B true CN108461616B (en) | 2020-08-07 |
Family
ID=63214486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810490997.1A Active CN108461616B (en) | 2018-05-21 | 2018-05-21 | Packaging method of thermoelectric separation heat dissipation structure for high-power L ED |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108461616B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111637428B (en) * | 2020-04-21 | 2021-10-15 | 江西吉丰工业技术有限公司 | An integrated high-power LED thermoelectric separation bracket |
CN113369626B (en) * | 2021-06-25 | 2023-03-24 | 中国电子科技集团公司第五十四研究所 | Low-contact thermal resistance mounting method for high-power amplifier chip |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2063334U (en) * | 1989-09-04 | 1990-10-03 | 南开大学 | Metal printed circuit board |
CN201918423U (en) * | 2010-12-07 | 2011-08-03 | 山东山泰集团有限公司 | LED heat conduction and dissipation mechanism |
CN202363517U (en) * | 2011-12-01 | 2012-08-01 | 珠海全宝电子科技有限公司 | Aluminium base plate heat dissipation mechanism used for LED (light-emitting diode) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201918430U (en) * | 2011-01-27 | 2011-08-03 | 深圳市德泽能源科技有限公司 | Integral heat dissipation structure for LED substrate |
CN204611406U (en) * | 2015-03-20 | 2015-09-02 | 北京科睿兆明光电科技有限公司 | Led lamp component |
-
2018
- 2018-05-21 CN CN201810490997.1A patent/CN108461616B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2063334U (en) * | 1989-09-04 | 1990-10-03 | 南开大学 | Metal printed circuit board |
CN201918423U (en) * | 2010-12-07 | 2011-08-03 | 山东山泰集团有限公司 | LED heat conduction and dissipation mechanism |
CN202363517U (en) * | 2011-12-01 | 2012-08-01 | 珠海全宝电子科技有限公司 | Aluminium base plate heat dissipation mechanism used for LED (light-emitting diode) |
Also Published As
Publication number | Publication date |
---|---|
CN108461616A (en) | 2018-08-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102790161B (en) | Light-emitting diode carrier | |
US20100301359A1 (en) | Light Emitting Diode Package Structure | |
CN108461616B (en) | Packaging method of thermoelectric separation heat dissipation structure for high-power L ED | |
WO2011124019A1 (en) | Led lampwick, led chip, and method for manufacturing led chip | |
TW201349577A (en) | Lighting device | |
CN201093439Y (en) | LED heat dissipation substrate | |
CN102593317B (en) | High-power high-brightness light-emitting diode (LED) light source packaging structure and packaging method thereof | |
TW201037803A (en) | Multi-layer packaging substrate, method for making the packaging substrate, and package structure of light-emitting semiconductor | |
CN108630799B (en) | Thermoelectric separation heat radiation structure for high-power L ED | |
CN103022332A (en) | Flip-chip substrate and manufacturing method thereof as well as flip-chip-substrate-based LED (Light Emitting Diode) packaging structure | |
JP2012146952A (en) | Light-emitting device and formation method thereof | |
CN202948970U (en) | Improved Thermally Conductive LED Substrate | |
CN208240729U (en) | A kind of great power LED thermoelectricity separation radiator structure | |
WO2011038550A1 (en) | Led energy-saving lamp | |
CN102454956B (en) | Single LED (light-emitting diode) light source radiating seat and LED lamp | |
CN106129235B (en) | A kind of the high heat conduction chip light source substrate and its manufacturing method of thermoelectricity separation | |
CN201804911U (en) | LED chip with ceramic substrate | |
CN102013452B (en) | LED lamp and LED chip and manufacture method | |
TW201429009A (en) | Light-emitting diode device and method for manufacturing heat-dissipating substrate | |
CN201087787Y (en) | Improved structure of high-power LED heat dissipation substrate | |
CN114975752B (en) | High power LED substrate structure and high power LED lamp | |
CN205264751U (en) | Low thermal resistance LED light source | |
CN222836834U (en) | LED lamp and heat radiating device thereof | |
CN103032835B (en) | A kind of lamp panel structure | |
CN219318381U (en) | Heat radiation structure of LED lamp |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |