CN108444619A - A kind of pressure sensor and preparation method thereof - Google Patents
A kind of pressure sensor and preparation method thereof Download PDFInfo
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- CN108444619A CN108444619A CN201810182414.9A CN201810182414A CN108444619A CN 108444619 A CN108444619 A CN 108444619A CN 201810182414 A CN201810182414 A CN 201810182414A CN 108444619 A CN108444619 A CN 108444619A
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- 238000002360 preparation method Methods 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 238000007639 printing Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 10
- 238000002493 microarray Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000007790 scraping Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 2
- 229920000767 polyaniline Polymers 0.000 claims description 2
- 229920000128 polypyrrole Polymers 0.000 claims description 2
- 229920003225 polyurethane elastomer Polymers 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 10
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000004044 response Effects 0.000 description 5
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000007641 inkjet printing Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- -1 polydimethylsiloxane Polymers 0.000 description 3
- 229920000867 polyelectrolyte Polymers 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003938 response to stress Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Present disclosure provides a kind of pliable pressure sensor in first aspect, and second aspect provides the preparation method of pliable pressure sensor described in first aspect.Technical solution described in present disclosure by printing electrod-array, blade coating pressure sensitive successively on a flexible substrate, it is prepared for pliable pressure sensor simple in structure, avoid the use of expensive device and complicated technology, with device architecture simple, high sensitivity, it is at low cost, can quickly and the technique effect for preparing of large area.
Description
Technical Field
The invention relates to a pressure sensor and a preparation method thereof, in particular to a flexible capacitive pressure sensor and a preparation method thereof.
Background
The pressure sensor is a device or apparatus for converting a sensed pressure signal into an electrical signal according to a certain rule and outputting the electrical signal, and generally comprises a pressure sensitive element and a signal processing unit. The pressure sensor is widely applied to industrial automatic control environments, relates to petroleum and petrochemical industry, aerospace industry, production automatic control, intelligent buildings, railway traffic, water conservancy and hydropower, electric power, military industry, machine tools and the like, and is particularly used for measuring and controlling pressure, height, acceleration, liquid flow, flow velocity, liquid level and pressure.
In 1945, smith discovered the piezoresistive effect of silicon and germanium, i.e., when mechanical forces were applied to a semiconductor material, the resistance would change significantly. The initial structure is to stick the strain resistance chip on the metal film, i.e. to convert the force signal into electric signal for measurement. With the development of material technology, micromachining technology and microelectronic technology, the structure of pressure sensors has shifted from the traditional design to the microstructured design, and has been developed greatly. The pressure sensors are widely applied to piezoresistive pressure sensors, capacitive pressure sensors and the like, wherein the piezoresistive pressure sensors are most widely applied due to high compatibility between the preparation process and the industrial semiconductor process and simple preparation process. However, the piezoresistive pressure sensor has poor temperature characteristics, low sensitivity, large power consumption and undesirable effects in the application field with high requirements on reliability and precision. The capacitance type pressure sensor generally adopts a plate capacitance mode, a pressure-sensitive material film is used as a dielectric layer of the capacitor, and when the capacitance type pressure sensor is subjected to external force, the pressure-sensitive material film senses the external force to deform, so that the distance between two electrodes of the capacitor changes, and the capacitance changes.
In recent years, due to the rise of flexible electronics, flexible high polymer materials such as polydimethylsiloxane, polyimide, polyethylene and the like are widely used for preparing flexible capacitive sensors due to the advantages of low cost, good flexibility, good adhesion, low internal stress, simple preparation process, excellent dielectric property and the like.
In the prior art of a capacitive pressure sensor using a modified molecular material as a dielectric layer, the problems are mainly two-fold: 1) in order to improve the sensitivity of the sensor, the pressure-sensitive material is usually subjected to micro-structural treatment, but in the prior art, a mask is mainly prepared by photoetching and developing, and then a metal electrode is sputtered or evaporated to form a microarray or nano-array electrode sensor, the process has expensive equipment and complex preparation process, the flexibility of the electrode structure design is limited, the process is not beneficial to large-area preparation, the process has more parameters, the sensitivity of the electrode needs to be improved, Chinese patent application CN107219194A describes a method for preparing a polyelectrolyte compound with a patterned micro-nano structure with stress response by a thermal transfer method, the patterning process of the polyelectrolyte compound with the patterned micro-nano structure relates to the steps of firstly preparing a Polydimethylsiloxane (PDMS) patterned stamp in a patterned silicon substrate culture dish, then preparing the polyelectrolyte compound with the patterned micro-nano structure by thermal transfer by taking the PDMS stamp as a template, the preparation process has more parameters and complex process; 2) pressure-sensitive materials or dielectric layer materials are mostly formed by spin coating with a spin coater, for example, chinese patent application No. CN106098927A describes a sandwich type flexible capacitive pressure sensor, wherein a PDMS layer is prepared by a spin coating method, and the spin coating process is prone to waste of raw materials, which increases the cost.
Therefore, it is an urgent need to solve the problems in the prior art to provide a flexible pressure sensor with high sensitivity, low cost, simple preparation process, and rapid large-area preparation, and a preparation method thereof.
Disclosure of Invention
In order to solve the above problems in the prior art, the present inventors have conducted extensive experiments and, as a first aspect of the present invention, provided a flexible pressure sensor having a micro-array characteristic and thus having high sensitivity and a good linear response characteristic; the second aspect provides a method for preparing the flexible pressure sensor in the first aspect, the method comprises the steps of firstly preparing microarray electrodes on a first substrate and a second substrate respectively through an ink-jet printing method, then blade-coating a pressure-sensitive material compound on the first electrode layer and the second electrode layer respectively to form a pressure-sensitive material layer, and oppositely attaching the two pressure-sensitive material layers to form the pressure sensor, wherein the process for preparing the microarray electrodes through ink-jet printing and the process for preparing the pressure-sensitive material layer through the blade-coating pressure-sensitive material compound realize the full-printing preparation of the pressure sensor, simplify equipment and processes, and simultaneously avoid raw material waste caused by spraying and spin-coating processes in the prior art and high cost caused by photoetching and evaporation of electrodes.
The present invention provides in a first aspect a pressure sensor comprising:
a first substrate;
a first electrode layer printed on the first substrate;
a second substrate;
a second electrode layer printed on the second substrate;
a layer of pressure sensitive material between the first electrode layer and the second electrode layer; wherein,
the pressure-sensitive material layer is made of an organic material having pressure-sensitive characteristics; the electrode layer is a microarray electrode.
Preferably, the organic material is at least one of a silicone material and/or an elastic urethane rubber.
Preferably, the electrode array of the first electrode layer and the array of the second electrode layer are distributed perpendicular to each other.
Preferably, the first substrate and the second substrate are flexible substrates; more preferably, the flexible substrate is one or two selected from PET, PEN or PI film.
Preferably, the first electrode layer and the second electrode layer are metal conductor electrodes of silver, copper, nickel, or PEDOT: one or any two of organic conductors such as PSS, polyaniline and polypyrrole.
The present invention in a second aspect provides a method of manufacturing a pressure sensor according to the first aspect, comprising the steps of:
1) printing the first electrode layer on the first substrate;
2) coating a pressure-sensitive compound on the first electrode layer in a scraping mode to form a pressure-sensitive material layer;
3) printing the second electrode layer on the second substrate;
4) coating a pressure-sensitive compound on the second electrode layer in a scraping mode to form a pressure-sensitive material layer;
5) selecting a first electrode layer covered with a pressure-sensitive material layer and a second electrode layer covered with a pressure-sensitive material, wherein the first electrode layer and the second electrode layer are the same in size, enabling the pressure-sensitive material layers of the first electrode layer and the second electrode layer to be relatively attached, and enabling the array of the first electrode layer to be perpendicular to the array of the second electrode layer.
According to the technical scheme, the microarray electrode is prepared on the flexible substrate through an ink-jet printing method in sequence, the pressure-sensitive material layer is prepared through blade coating of the pressure-sensitive material compound, the full-printing preparation of the flexible pressure sensor is achieved, the prepared flexible pressure sensor has the technical effects of simple structure, high sensitivity, good linear response, good stability and low cost, and the technical scheme for preparing the flexible pressure sensor is simple in process and can be used for preparing the sensing device rapidly in a large area.
In addition, the scheme can be used for preparing other thin film sensors.
Drawings
FIG. 1 is a time-capacitance curve of a flexible pressure sensor according to a preferred embodiment of the present invention under different pressure conditions.
Fig. 2 is a pressure sensitive characteristic of the flexible pressure sensor according to the preferred embodiment of the present invention.
Fig. 3 is a graph showing the response and recovery of a flexible pressure sensor under constant pressure in accordance with a preferred embodiment of the present invention.
Detailed Description
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, structure and method of use thereof are further described in connection with the accompanying drawings and preferred embodiments, which are not to be construed as limiting the scope of the present invention.
Example 1
Preparing a pressure sensor:
1) preparing a flexible electrode array: and (3) ink-jet printing strip-shaped silver electrode stripes on the flexible substrate, wherein the width of the electrode stripes and the stripe intervals can be adjusted according to requirements.
2) Preparing PDMS pressure sensitive adhesive: mixing and stirring the PDMS matrix and the curing agent in a ratio of 10:1 for 30min, and standing for 20min in a vacuum environment to remove air bubbles to obtain the viscous PDMS pressure sensitive adhesive.
3) And scraping the PDMS pressure sensitive adhesive on the flexible electrode array, selecting two electrodes with the same size coated with the PDMS pressure sensitive adhesive, attaching the two electrodes to form a sandwich structure, enabling the two electrode arrays to be vertical to each other, and curing the two electrode arrays at 70 ℃ for 2 hours to obtain the flexible pressure sensor.
And (3) testing the performance of the pressure sensor:
the prepared flexible array type pressure sensor is used for testing capacitance change under different pressure conditions by adopting a WK6515B precision impedance analyzer (Wayne Kerr electronics).
Fig. 1 is a time-capacitance curve of a pressure sensor prepared by the method described in example 1 under different pressures, and it can be seen from the graph that the capacitance is significantly increased when the pressure is increased and is correspondingly decreased when the pressure is decreased, and the pressure sensor has better resolving power for different pressures, indicating that the prepared pressure sensor has high sensitivity.
Fig. 2 is a capacitance characteristic curve of the pressure sensor prepared by the method described in example 1 under different pressures, and the result shows that the capacitance of the sensor exhibits a positive correlation with the pressure applied thereto, and the logarithmic values of the capacitance and the pressure have a better positive linear correlation.
FIG. 3 is a graph of the response and recovery at 50g of pressure for a pressure sensor made by the method described in example 1. As can be seen from the figure, the pressure response and recovery time are fast, and the results of multiple tests are stable, which shows that the device has good stability.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention should not be limited thereby, and those skilled in the art can make simple equivalent changes and modifications according to the claims and the disclosure of the present invention without departing from the principle of the present invention, and still fall into the protection scope of the present patent application.
Claims (7)
1. A pressure sensor, comprising:
a first substrate;
a first electrode layer printed on the first substrate;
a second substrate;
a second electrode layer printed on the second substrate;
a layer of pressure sensitive material between the first electrode layer and the second electrode layer; wherein,
the pressure-sensitive material is an organic material having pressure-sensitive characteristics; the electrode is a microarray electrode.
2. The pressure sensor of claim 1, wherein: the organic material with pressure-sensitive characteristic is at least one of an organic silicon material and/or elastic polyurethane rubber.
3. The pressure sensor of claim 1, wherein: the electrode array of the first electrode layer and the array of the second electrode layer are distributed perpendicularly to each other.
4. The pressure sensor of claim 1, wherein: the first substrate and the second substrate are flexible substrates.
5. The pressure sensor of claim 4, wherein: the flexible substrate is one or two selected from PET, PEN or PI films.
6. The pressure sensor of claim 1, wherein: the first electrode layer and the second electrode layer are made of metal conductor electrodes such as silver, copper, nickel and the like or PEDOT: one or any two of organic conductors such as PSS, polyaniline and polypyrrole.
7. Method for manufacturing a pressure sensor according to any of claims 1-6, comprising the steps of:
1) printing the first electrode layer on the first substrate;
2) coating a pressure-sensitive compound on the first electrode layer in a scraping mode to form a pressure-sensitive material layer;
3) printing the second electrode layer on the second substrate;
4) coating a pressure-sensitive compound on the second electrode layer in a scraping mode to form a pressure-sensitive material layer;
5) selecting a first electrode layer covered with a pressure-sensitive material layer and a second electrode layer covered with a pressure-sensitive material, wherein the first electrode layer and the second electrode layer are the same in size, enabling the pressure-sensitive material layers of the first electrode layer and the second electrode layer to be relatively attached, and enabling the array of the first electrode layer to be perpendicular to the array of the second electrode layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201711033063 | 2017-10-30 | ||
| CN2017110330637 | 2017-10-30 |
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| CN108444619A true CN108444619A (en) | 2018-08-24 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109540354A (en) * | 2018-12-03 | 2019-03-29 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| CN109556768A (en) * | 2018-12-03 | 2019-04-02 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
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Application publication date: 20180824 |