CN108441945A - Method for improving uniformity of film growth epitaxial wafer - Google Patents
Method for improving uniformity of film growth epitaxial wafer Download PDFInfo
- Publication number
- CN108441945A CN108441945A CN201810354036.8A CN201810354036A CN108441945A CN 108441945 A CN108441945 A CN 108441945A CN 201810354036 A CN201810354036 A CN 201810354036A CN 108441945 A CN108441945 A CN 108441945A
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- substrate
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- epitaxial wafer
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- equal
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 235000012431 wafers Nutrition 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 abstract description 7
- 230000002411 adverse Effects 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 238000000407 epitaxy Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A method for improving the uniformity of a film growth epitaxial wafer comprises the following steps: selecting a substrate, wherein the specification size of the substrate is more than or equal to that of the pre-grown epitaxial wafer; arranging a ring structural member, wherein the size of the inner diameter of the ring structural member is equal to the specification size of the substrate, and the thickness of the ring structural member and the thickness of the substrate can be equal or unequal; placing the substrate into a ring structure member, wherein the ring structure member completely surrounds and connects the edge of the substrate into a continuous growth area; placing the substrate and the ring structure in a growth chamber for growth, so that a film epitaxial wafer with a preset specification structure grows on the substrate; and after the growth is finished, taking out the ring structural member, baking and cleaning the ring structural member for the next use. The invention utilizes the ring structural member to reduce the adverse effect caused by the boundary condition of the substrate, and finally obtains the epitaxial wafer with good uniformity.
Description
Technical field
It is specifically a kind of equal using ring structure raising film growth epitaxial wafer the invention belongs to technical field of semiconductors
The method of even property.
Background technology
Gallium nitride is as representative third generation wide band gap semiconducter, in illumination, display, ultraviolet light solidification, exposure
And the application fields such as sterilizing all have important application meaning, include the semiconductor laser etc. of bluish-green optical band, all have
There is potential application value, but the performance of blue light and green (light) laser and related opto-electronic device can not all obtain greatly at present
Width improves, and reason, which is that, lacks homoepitaxy substrate.At present in existing isoepitaxial growth method, including crystal growth, ammonia
Numerous technologies such as hot method, from the angle analysis of reality, hydride gas-phase epitaxy（HVPE）Material growth method is expected to obtain important prominent
It is broken.
Chemical vapor deposition (CVD) is to be now widely used for iii-v and II-VI compound semiconductor film materials
Growing method, be now widely used in gallium nitride based LED and LD volume productions growth equipment be mainly based upon MOCVD methods.The side CVD
Metal organic source is mainly accurately introduced reative cell by method by carrier gas (H2, N2, Ar gas) according to design flow, uniformly in substrate
Surface is reacted, and thin-film material is formed.Underlay substrate is positioned on graphite pallet, person's quartz pallet or other pallets, in pallet
Either surrounding is heated by filament or radio frequency for bottom, heating temperature is 500 ~ 1200 DEG C.Graphite pallet is by high-purity stone
Ink composition, and wrap up the SiC of certain thickness and quality requirement on surface.Heating unit is in graphite tray bottom or side.Mesh
The graphite plate for the band SiC coatings that the MOCVD epitaxy graphite plate of preceding Aixtron companies and Veeco are all, this structure design
The shortcomings that be：The outer edge of substrate can be contacted directly with graphite plate, due to edge caused by unlike material and temperature difference
Effect can cause film thickness marginal portion bigger than interior thickness deviation, and thickness evenness cannot be guaranteed, simultaneously because thickness
The inside and outside warpage and temperature difference that difference is brought, cause epitaxial wafer centre wavelength shorter than edge.Edge effect causes epitaxial wafer equal
Even property is bad.At present when growing 8 inches of silicon epitaxial wafers, using there is substrate to be also 8 inches, that is, the outer of much specifications is grown
Prolong the substrate that piece just uses same specification size, the specification of pallet is designed also according to the structure of substrate slice, equally exists side
The problem of edge effect.When improving the problem of growing epitaxial wafer uniformity, widespread practice is all that structure is carried out on graphite plate
Design and change.But structural change is carried out to graphite plate, follow-up use can be given to bring certain limitation, the verification week of product
Phase is very long, and production cost can be significantly increased.
Invention content
The technical problem to be solved in the present invention is to provide a kind of methods that raising film grows epitaxial wafer uniformity, utilize ring
Structural member reduces the adverse effect brought due to the boundary effect of substrate and pallet, final to obtain the good epitaxial wafer of uniformity.
In order to solve the above-mentioned technical problem, the present invention takes following technical scheme：
A method of it improving film and grows epitaxial wafer uniformity, include the following steps：
Substrate is chosen, the specification of the substrate is equal to the specification of pregrown epitaxial wafer；
One ring structure part is set, and the internal diameter size size of the ring structure part is equal to the specification of pregrown epitaxial wafer, ring knot
The thickness of component and the thickness of substrate are unequal or be not desired to；
Ring structure part is placed on substrate, ring structure part is surrounded by the edge of substrate；
Substrate is placed in growth room and is grown so that Grown goes out the thin film epitaxy piece of default specification framework；
After the completion of growth, ring structure part is taken out, toasted, cleaned up and remain next use.
The thickness of the ring structure part be more than or equal to or less than substrate thickness.
The ring structure part is made from substrate of identical or different material.
The internal diameter size of the ring structure part is more than the outer diameter of substrate.
The present invention by placing ring structure part directly in substrate edge, using ring structure part make the marginal portion of substrate with
Pallet is kept apart, and improve edges of substrate some growth is influenced by boundary condition, while can pass through the thickness of change ring
It spends integrally to efficiently control and improve the stress generated in epitaxial wafer in growth course, it is final to obtain the preferable film of uniformity
Epitaxial wafer, ring structure part is reusable, reduces cost.
Description of the drawings
Attached drawing 1 is ring structure part of the present invention and substrate combination schematic diagram.
Specific implementation mode
For that can further appreciate that the feature, technological means and the specific purposes reached, function of the present invention, with reference to
Present invention is further described in detail with specific implementation mode for attached drawing.
As shown in Fig. 1, present invention is disclosed a kind of methods that raising film grows epitaxial wafer uniformity, including following step
Suddenly：
Substrate 2 is chosen, the specification of the substrate is equal to the specification of pregrown epitaxial wafer.
One ring structure part 1 is set, and the internal diameter size size of the ring structure part is equal to the specification of substrate, ring structure part
Thickness and the thickness of substrate it is unequal it is either equal can be more than or equal to or be less than, usually the thickness of ring structure part is set
For the thickness more than substrate.By the adjustment of the thickness size and ring outer diameter size of ring structure part, it can improve and grow
The stress generated in journey and tilting, it is whole to improve growth quality, achieve the purpose that improve epitaxial wafer uniformity.
Substrate 2 is positioned in ring structure part 1, the marginal portion integral loop of substrate around encirclement, is linked to be one by ring structure part
A continuous growth district avoids substrate and outer peripheral material pallet from being in direct contact.Pass through the direct of ring structure part and substrate
Combination, is in direct contact using ring structure part to keep apart substrate and pallet.
Substrate is placed in growth room and is grown so that Grown goes out the thin film epitaxy of default specification
Piece.Growth conditions is using well known to a person skilled in the art modes.For example, substrate can be placed on to horizontal reative cell or hung down
In straight reative cell, under certain reaction pressure, when being heated to reaction temperature, the sources MO, high-purity ammon when high-purity carrier gas carrying
Gas including the pre-reaction materials such as gas, high-purity hydrogen and high pure nitrogen and carrier gas is flow to from gas handling system is horizontal or vertical
Up at substrate surface, substrate surface occur surface chemical reaction, and ring structure part identical with substrate material due to substrate
Edge is adjacent or close, thus reduces the adverse effect brought originally due to substrate and pallet boundary condition, makes Material growth group
Part is evenly distributed unanimously, and growth rate also more reaches unanimity, final to obtain the preferable thin film epitaxy piece of uniformity.
After the completion of growth, ring structure part is taken out, toasted, cleaned up and remain next use.Ring structure part can carry out
It uses, will not waste next time, save production cost.
The ring structure part is made from substrate of identical or different material.Substrate and ring structure part may include but
The materials such as sapphire, SiGe, quartz are not limited to be made.
The internal diameter size of the ring structure part is more than the size of substrate.
The present invention only needs ring structure part being placed on the outside of substrate, does not need additional seating means, simplifies dress
With difficulty, production efficiency is improved, other component need not be changed, reduces production cost, and ring structure part can weigh
It is multiple to use, it is good for the environment.
It should be noted that these are only the preferred embodiment of the present invention, it is not intended to restrict the invention, although ginseng
According to embodiment, invention is explained in detail, for those skilled in the art, still can be to aforementioned reality
The technical solution recorded in example is applied to modify or equivalent replacement of some of the technical features, but it is all in this hair
Within bright spirit and principle, any modification, equivalent replacement, improvement and so on should be included in protection scope of the present invention
Within.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810354036.8A CN108441945A (en) | 2018-04-19 | 2018-04-19 | Method for improving uniformity of film growth epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810354036.8A CN108441945A (en) | 2018-04-19 | 2018-04-19 | Method for improving uniformity of film growth epitaxial wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108441945A true CN108441945A (en) | 2018-08-24 |
Family
ID=63200254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810354036.8A Pending CN108441945A (en) | 2018-04-19 | 2018-04-19 | Method for improving uniformity of film growth epitaxial wafer |
Country Status (1)
| Country | Link |
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| CN (1) | CN108441945A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113463200A (en) * | 2021-06-25 | 2021-10-01 | 北京大学 | Limited area growth ring for HVPE reaction furnace and nitride crystal growth method |
| CN115404544A (en) * | 2022-08-26 | 2022-11-29 | 中国电子科技集团公司第十三研究所 | Hollow disc |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101488468A (en) * | 2008-01-17 | 2009-07-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer retaining system and semiconductor processing apparatus applying the system |
| CN102656298A (en) * | 2010-12-21 | 2012-09-05 | 高晶科技有限公司 | Method and device for manufacturing self-supporting gallium nitride (GaN) substrate |
| CN202576645U (en) * | 2012-04-24 | 2012-12-05 | 浙江金瑞泓科技股份有限公司 | Graphite base |
| CN106463445A (en) * | 2014-05-21 | 2017-02-22 | 应用材料公司 | Thermal processing susceptor |
| CN107058978A (en) * | 2017-03-07 | 2017-08-18 | 华灿光电（浙江）有限公司 | Graphite plate base |
| CN206467325U (en) * | 2016-11-23 | 2017-09-05 | 上海东洋炭素有限公司 | A kind of SiC coating graphites pedestal |
| CN206814882U (en) * | 2017-04-05 | 2017-12-29 | 东莞市中镓半导体科技有限公司 | A Hydride Vapor Phase Epitaxial Graphite Boat Structure |
-
2018
- 2018-04-19 CN CN201810354036.8A patent/CN108441945A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101488468A (en) * | 2008-01-17 | 2009-07-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer retaining system and semiconductor processing apparatus applying the system |
| CN102656298A (en) * | 2010-12-21 | 2012-09-05 | 高晶科技有限公司 | Method and device for manufacturing self-supporting gallium nitride (GaN) substrate |
| CN202576645U (en) * | 2012-04-24 | 2012-12-05 | 浙江金瑞泓科技股份有限公司 | Graphite base |
| CN106463445A (en) * | 2014-05-21 | 2017-02-22 | 应用材料公司 | Thermal processing susceptor |
| CN206467325U (en) * | 2016-11-23 | 2017-09-05 | 上海东洋炭素有限公司 | A kind of SiC coating graphites pedestal |
| CN107058978A (en) * | 2017-03-07 | 2017-08-18 | 华灿光电（浙江）有限公司 | Graphite plate base |
| CN206814882U (en) * | 2017-04-05 | 2017-12-29 | 东莞市中镓半导体科技有限公司 | A Hydride Vapor Phase Epitaxial Graphite Boat Structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113463200A (en) * | 2021-06-25 | 2021-10-01 | 北京大学 | Limited area growth ring for HVPE reaction furnace and nitride crystal growth method |
| CN115404544A (en) * | 2022-08-26 | 2022-11-29 | 中国电子科技集团公司第十三研究所 | Hollow disc |
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Application publication date: 20180824 |