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CN108431293A - Cylindrical ceramic sputtering target and cylindrical ceramic sputtering target formed by joining one or more cylindrical ceramic sputtering targets on the backing tube - Google Patents

Cylindrical ceramic sputtering target and cylindrical ceramic sputtering target formed by joining one or more cylindrical ceramic sputtering targets on the backing tube Download PDF

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CN108431293A
CN108431293A CN201780005879.0A CN201780005879A CN108431293A CN 108431293 A CN108431293 A CN 108431293A CN 201780005879 A CN201780005879 A CN 201780005879A CN 108431293 A CN108431293 A CN 108431293A
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sputtering target
target
ceramic sputtering
cylinder
shaped ceramic
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馆野谕
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JX Nippon Mining and Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering

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  • Ceramic Engineering (AREA)
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Abstract

The cylinder-shaped ceramic sputtering target being bonded on the object of the present invention is to provide a kind of cylinder-shaped ceramic sputtering target material and by the cylinder-shaped ceramic sputtering target material on backing pipe, thus, it is possible to inhibit electric arc occur, tubercle, cracked problem occur, wherein described problem is only by being provided separately within various mass properties (crystal size, relative density, conductivity etc.) in appropriate range and can not prevent.A kind of cylinder-shaped ceramic sputtering target material is provided, on cylinder-shaped ceramic sputtering target material, it is divided into four parts of regions in the axial direction of target, each of four parts of regions are divided into region with 0 °, 90 °, 180 ° and 270 ° of interval in a circumferential direction again, when measuring aberration Δ E*ab on each region marked off, aberration Δ E*ab is less than 1.0.

Description

圆筒形陶瓷溅射靶材及在背衬管上接合一个或多个圆筒形陶 瓷溅射靶材构成的圆筒形陶瓷溅射靶Cylindrical ceramic sputtering target and bonding one or more cylindrical ceramic sputtering targets to a backing tube Cylindrical ceramic sputtering target made of porcelain sputtering target

技术领域technical field

本发明涉及一种圆筒形陶瓷溅射靶材以及通过在背衬管上接合一个以上的圆筒形陶瓷溅射靶材而构成的圆筒形陶瓷溅射靶。尤其是,涉及一种IGZO(氧化铟镓锌)、IZO(氧化铟锌)、ITO(氧化铟锡)等透明氧化物半导体的烧结体的圆筒形溅射靶材(下称“圆筒形靶材”。)以及在背衬管上结合有所述圆筒形溅射靶材的圆筒形溅射靶(下称“圆筒形靶”。)。The present invention relates to a cylindrical ceramic sputtering target and a cylindrical ceramic sputtering target formed by joining one or more cylindrical ceramic sputtering targets to a backing tube. In particular, it relates to a cylindrical sputtering target (hereinafter referred to as "cylindrical sputtering target") of a sintered body of a transparent oxide semiconductor such as IGZO (indium gallium zinc oxide), IZO (indium zinc oxide), and ITO (indium tin oxide). Target".) and a cylindrical sputtering target (hereinafter referred to as "cylindrical target") that is combined with the cylindrical sputtering target on the backing tube.

背景技术Background technique

对于圆筒形靶材,优选将各种块体特性(晶粒尺寸、相对密度、电导率等)管理在适当的范围内。但是很多测试项目(晶粒尺寸、相对密度、块体电阻值、表面粗糙度等)是局部测试,基本上是独立获取各测试项目的。再有,在检测圆筒形靶材的性能时,无法伴随产品本身的破坏而进行检测、评估。再有,采用圆筒形靶材时,与以往的平板型靶材相比,存在制造困难的一面,且由于靶材的成分和烧结时靶材内的热量的传导方法和热量传导的位置不均匀、氧气浓度不均匀,会导致极难制造出整个块体的特性均匀的靶材。For cylindrical targets, it is preferable to manage various bulk properties (grain size, relative density, electrical conductivity, etc.) within appropriate ranges. However, many test items (grain size, relative density, bulk resistance value, surface roughness, etc.) are partial tests, and each test item is basically obtained independently. Furthermore, when testing the performance of a cylindrical target, it cannot be tested and evaluated along with the destruction of the product itself. Furthermore, when a cylindrical target is used, compared with the conventional flat target, it is difficult to manufacture, and because the composition of the target and the heat conduction method and position of heat conduction in the target during sintering are different. Uniform and uneven oxygen concentration will make it extremely difficult to manufacture a target with uniform characteristics throughout the block.

另一方面,已知在圆筒形靶的使用面上,只要存在一处故障点,就会造成出现电弧、出现结节、出现裂纹等问题。实际上,在圆筒形靶上,溅射时常常会出现电弧、结节等异常状况。即便对溅射时出现异常的靶进行关于影响溅射的因素的各测试项目(晶粒尺寸、相对密度、块体电阻值、表面粗糙度等)的检测,但很多时候影响溅射的各因素都没有任何异常,此时,溅射时导致出现电弧、出现结节等异常状况的原因不明。因此,存在的问题是:当关于影响溅射的各因素的各测试项目没有任何异常时,如果不实际进行溅射,就无法检测出有问题的圆筒形靶或圆筒形靶材。从这一点出发,也需要一个综合评价、管理圆筒形靶材整体的指标。On the other hand, it is known that if there is only one point of failure on the use surface of a cylindrical target, problems such as arcing, nodules, and cracks will occur. In fact, on cylindrical targets, abnormal conditions such as arcs and nodules often occur during sputtering. Even if the test items (grain size, relative density, bulk resistance value, surface roughness, etc.) of the factors affecting sputtering are tested for targets that appear abnormal during sputtering, the factors that affect sputtering are often There was no abnormality at all, and at this time, the cause of abnormalities such as arcing and nodules during sputtering is unknown. Therefore, there is a problem that when there is no abnormality in each test item regarding each factor affecting sputtering, a problematic cylindrical target or cylindrical target cannot be detected without actually performing sputtering. From this point of view, an index for comprehensive evaluation and management of cylindrical targets is also needed.

本申请发明人经过锐意研究,认识到采用宏观的即综合观察的结果进行的评价是很重要。以往在制造烧结体时,通过改变烧结条件,可控制相对密度或晶粒,提高溅射时的特性。但是,由于晶粒的评价通常使用平均晶粒尺寸(参照采用几百~几千倍的观察视场拍摄的SEM照片以编码法等进行测量)的指标,所以还停留在圆筒形靶材的局部评价上。The inventors of the present application have recognized the importance of evaluation using the results of macroscopic observations, that is, comprehensive observations, as a result of earnest research. Conventionally, when producing a sintered body, by changing the sintering conditions, the relative density and crystal grains can be controlled, and the characteristics during sputtering can be improved. However, since the evaluation of grains usually uses the index of the average grain size (measured by referring to the SEM photograph taken with the observation field of several hundred to several thousand times by the coding method, etc.), it still stays at the standard of the cylindrical target. local evaluation.

然而,作为圆筒形靶材的晶粒分布,已知可大致分为以下四种模式。第一种模式是分布为从小颗粒逐渐到大颗粒的情况,第二种是在小颗粒中例如存在异常晶粒长大的大颗粒的情况,第三种模式是颗粒直径两极分化的情况,第四种模式是所有晶粒均匀的情况。However, it is known that the crystal grain distribution of a cylindrical target can be roughly classified into the following four patterns. The first mode is the case where the distribution is gradually from small grains to large grains, the second is the case where there are, for example, large grains with abnormal grain growth among the small grains, the third mode is the case where the grain diameters are polarized, and No. The four modes are the cases where all grains are uniform.

在上述四种模式中,造成问题的主要是宏观地看第一种模式~第三种模式时,存在晶粒的群与群之间尺寸不同的模式。当在晶粒的群与群之间存在晶粒尺寸不同的模式(即不是宏观地看时各个晶粒的差异,而是获取一定程度均匀的晶粒的集合区域来作为群时,存在多个群,多个群中的每一个由尺寸不同的晶粒构成。)时,多会在群与群之间的界面处发生破裂。进而,造成的结果是根据晶粒尺寸不同,圆筒形靶材内的各区域的强度会不同,在进行表面切割时产生表面粗糙度会变化的问题。从而,综合地评价、管理圆筒形靶材整体的特性是很重要的。Among the above four modes, the main problem is that when the first mode to the third mode are viewed macroscopically, there are modes in which the sizes of crystal grain groups differ from group to group. When there is a mode in which the grain size differs between groups of crystal grains (that is, it is not a difference between individual crystal grains when viewed macroscopically, but a collection area of crystal grains that are uniform to a certain extent is obtained as a group, there are multiple Groups, each of which is composed of grains of different sizes.), cracks often occur at the interface between the groups. Furthermore, as a result, the strength of each region in the cylindrical target varies depending on the grain size, and the problem that the surface roughness changes when the surface is cut occurs. Therefore, it is important to comprehensively evaluate and manage the characteristics of the cylindrical target as a whole.

在专利文献1中,记载了将氧化物半导体的溅射靶中包含的化合物的平均粒径设置在10μm以下,优选在6μm以下,更优选在4μm以下;将去除了烧完的表面的靶表面部和用平面磨床从该表面部研磨2mm的部分的色差ΔE控制在预定值以下,并且将电阻率设置在预定值以下,由此在形成氧化物半导体或透明导电膜等氧化物薄膜时,得到可无需提高氧分压且不容易形成聚集体并抑制发生异常放电的溅射靶。然而,根据专利文献1中所述的实验结果,仅通过与晶粒尺寸的关系就可确定电阻率设置在预定值以下,基本上与控制色差没有任何关系。In Patent Document 1, it is described that the average particle size of the compound contained in the oxide semiconductor sputtering target is set to be 10 μm or less, preferably 6 μm or less, more preferably 4 μm or less; Part and the color difference ΔE of the part that is ground 2 mm from the surface part with a surface grinder is controlled below a predetermined value, and the resistivity is set below a predetermined value, thereby when forming an oxide thin film such as an oxide semiconductor or a transparent conductive film, it is obtained. A sputtering target that does not require an increase in oxygen partial pressure, does not easily form aggregates, and suppresses occurrence of abnormal discharge. However, according to the experimental results described in Patent Document 1, it is confirmed that the resistivity is set below a predetermined value only by the relationship with the crystal grain size, basically without any relation to the control of chromatic aberration.

专利文献2公开了一种靶,其中通过控制靶的颜色来控制溅射靶的成分组成的化学计量偏差,从而显著地抑制在溅射期间产生颗粒。然而,其是以颜色本身作为问题,而不是以色差ΔE*ab作为问题。另外,该制造方法是制造平坦靶的传统方法,不涉及圆筒形靶。在专利文献3中,溅射靶的颜色不均匀,会造成在溅射发热时来自靶表面的热辐射不均匀,容易产生温度差等问题,因此为了抑制颜色不均匀,提出了含有Zr、Si和Al中的至少一种添加剂的氧化锌烧结体。但是,专利文献3中记载的溅射靶是以往的平板型靶,且由于通过使靶中含有添加剂来防止颜色不均匀,所以靶的组分和所需的溅射形成的薄膜的组分不同,因此它不是一个根本性的解决方案。在专利文献4中,颜色差异(颜色不均匀)是以烧结体的表面和内部之间色差作为问题,所以只是对靶的局部评价。此外,其涉及的是常规的平板型靶,用于解决表面与内部之间的颜色差异的具体方法也与专利文献3中一样,是含有从添加剂Al、Ga、B、Nb、In、Y、Sc中选择的至少一种元素的方法。因此,专利文献4中记载的发明也和专利文献3一样,在该发明中,即使能够消除靶的表面和内部的颜色差异,由于靶的组分和所需的溅射形成的薄膜的组分不同,因此,其不是一个根本性的解决方案。Patent Document 2 discloses a target in which the stoichiometric deviation of the composition of the sputtering target is controlled by controlling the color of the target, thereby significantly suppressing the generation of particles during sputtering. However, it is the color itself as a problem, not the color difference ΔE*ab. In addition, this fabrication method is a conventional method of fabricating flat targets and does not involve cylindrical targets. In Patent Document 3, the uneven color of the sputtering target will cause uneven heat radiation from the target surface during sputtering heat generation, and problems such as temperature differences will easily occur. Therefore, in order to suppress the uneven color, it is proposed to contain Zr, Si Zinc oxide sintered body with at least one additive in Al. However, the sputtering target described in Patent Document 3 is a conventional flat-plate target, and since color unevenness is prevented by containing additives in the target, the composition of the target is different from the composition of the thin film to be formed by sputtering. , so it's not a fundamental solution. In Patent Document 4, the color difference (color unevenness) is a color difference between the surface and the inside of the sintered body as a problem, so it is only a local evaluation of the target. In addition, it relates to a conventional flat-plate target, and the specific method for solving the color difference between the surface and the interior is the same as in Patent Document 3, which contains additives from Al, Ga, B, Nb, In, Y, Method of at least one element chosen in Sc. Therefore, the invention described in Patent Document 4 is also the same as Patent Document 3. In this invention, even if the color difference between the surface and the inside of the target can be eliminated, due to the composition of the target and the composition of the thin film formed by sputtering, different, therefore, its not a fundamental solution.

现有技术文献prior art literature

专利文献patent documents

专利文献1:WO2012-153522号公报Patent Document 1: WO2012-153522 Publication

专利文献2:日本专利公开2001-11614号公报Patent Document 2: Japanese Patent Laid-Open No. 2001-11614

专利文献3:日本专利公开2010-202896号公报Patent Document 3: Japanese Patent Laid-Open No. 2010-202896

专利文献4:日本专利公开2010-150107号公报Patent Document 4: Japanese Patent Laid-Open No. 2010-150107

发明内容Contents of the invention

发明要解决的技术问题The technical problem to be solved by the invention

本发明的课题是提供一种圆筒形靶,其可抑制出现电弧、出现结节、出现裂纹的问题,而所述问题只通过将各种块体特性(晶粒尺寸、相对密度、块体电阻值、表面粗糙度等)局部地单独设置在适当范围内,即基本上独立获取多个参数进行评价是无法防止。具体而言是,提供一种圆筒形靶材和圆筒形靶,所述圆筒形靶材不仅考虑到关于圆筒形靶材的特性的个别影响溅射的因素的观察结果,还兼顾宏观地观察了靶材整体的结果,可确保靶材整体的均匀化,所述圆筒形靶是将一个以上的这些圆筒形靶材结合在背衬管上的圆筒形靶。The object of the present invention is to provide a cylindrical target that can suppress the problems of arcing, nodules, and cracks by combining various bulk properties (grain size, relative density, bulk Resistance value, surface roughness, etc.) are locally individually set within an appropriate range, that is, basically independent acquisition of multiple parameters for evaluation cannot be prevented. Specifically, a cylindrical target material and a cylindrical target material are provided, which not only take into account the observation results of individual factors affecting sputtering with respect to the characteristics of the cylindrical target material, but also take into account As a result of macroscopic observation of the entire target material, uniformity of the entire target material can be ensured. The cylindrical target is a cylindrical target in which one or more of these cylindrical target materials are bonded to the backing tube.

解决问题的手段means of solving problems

为解决上述课题,本申请的发明人着眼于圆筒形靶材的色差ΔE*ab。即一种圆筒形靶,即使对涉及影响溅射的因素的各测试项目(晶粒尺寸、相对密度、块体电阻值、表面粗糙度等)进行检测,影响溅射的因素并没有任何异常,但实际溅射时却会发生出现电弧、出现结节等异常,所述圆筒形靶都是圆筒形靶材表面的色差ΔE*ab随区域而不同的靶。另一方面,当圆筒形靶材是表面整体的色差ΔE*ab目测几乎相同的圆筒形靶时,溅射时倾向于出现电弧、出现结节的异常发生得少。本发明人经过锐意研究,结果发现色差ΔE*ab作为评价、管理各个烧结体整体的指标是有效的。得知色差ΔE*ab可视为各圆筒形靶材的块体特性的综合性结果,使该色差ΔE*ab在烧结体内尽量均匀将抑制在溅射中发生异常。如此,发现了作为使圆筒形靶材的整体特性稳定的指标的色差ΔE*ab,完成了发明。In order to solve the above-mentioned problems, the inventors of the present application focused on the color difference ΔE*ab of the cylindrical target. That is, a cylindrical target, even if the various test items (grain size, relative density, bulk resistance value, surface roughness, etc.) related to the factors affecting sputtering are tested, there is no abnormality in the factors affecting sputtering , but during actual sputtering, abnormalities such as arcs and nodules may occur. The cylindrical targets are all targets in which the color difference ΔE*ab on the surface of the cylindrical target varies with the region. On the other hand, when the cylindrical target has almost the same color difference ΔE*ab as viewed visually on the entire surface, abnormalities such as arcing and nodules tend to occur during sputtering rarely occur. As a result of earnest research, the present inventors have found that the color difference ΔE*ab is effective as an index for evaluating and managing the entire sintered body. It is known that the color difference ΔE*ab can be regarded as a comprehensive result of the bulk characteristics of each cylindrical target material, and making the color difference ΔE*ab as uniform as possible in the sintered body will suppress abnormalities in sputtering. In this way, they discovered the color difference ΔE*ab as an index for stabilizing the overall characteristics of the cylindrical target, and completed the invention.

在本说明书中,色差ΔE*ab是采用日本电色工业公司制造的NF333测量的。色差可用以下的公式1表示。In this specification, the color difference ΔE*ab is measured using NF333 manufactured by Nippon Denshoku Kogyo Co., Ltd. The color difference can be represented by Equation 1 below.

ΔE*ab=((ΔL*)^2+(Δa*)^2+(Δb*)^2)^0.5(公式1)ΔE*ab=((ΔL*)^2+(Δa*)^2+(Δb*)^2)^0.5 (Formula 1)

晶粒是圆筒形靶材的组织的代表,对电导率等也有很大影响。色差ΔE*ab受到相对密度、晶粒尺寸、表面粗糙度等靶组织或物理形状等的影响。本发明针对受到例如相对密度、晶粒尺寸、表面粗糙度的靶组织或物理形状的各影响的色差Δ*,可通过认识圆筒形靶材整体的色差Δ*,提供整个块体均匀的溅射靶。Crystal grains are representative of the structure of cylindrical targets and have a great influence on electrical conductivity and the like. The color difference ΔE*ab is affected by the target structure or physical shape such as relative density, grain size, surface roughness, etc. The present invention aims at the color difference Δ* affected by the target structure or physical shape such as relative density, grain size, surface roughness, and can provide uniform sputtering of the entire block by knowing the overall color difference Δ* of the cylindrical target. target.

采用本发明,提供一种圆筒形靶材,其特征在于:在其轴向上等间隔分成四份,再将分成四份的区域每个以圆周方向上0°、90°、180°以及270°的间隔划分成16个区域,将各区域作为测量区域,此时,各测量区域的规定的两点上的色差ΔE*ab在1以下。再有,提供一种圆筒形靶,即:准备一个以上的溅射靶,将所述溅射靶接合在由Ti、Cu或包含这些金属的合金构成的背衬管上,所述溅射靶的特征在于:在其轴向上等间隔分成四份,再将分成四份的区域每个以圆周方向上0°、90°、180°以及270°的间隔划分成16个区域,将所述16个区域中的各个区域作为测量区域,此时各测量区域的规定的两点上的色差ΔE*ab在1以下。According to the present invention, a cylindrical target material is provided, which is characterized in that: it is divided into four parts at equal intervals in the axial direction, and then each of the four parts is divided into 0°, 90°, 180° and The interval of 270° is divided into 16 areas, and each area is used as a measurement area. At this time, the color difference ΔE*ab at two predetermined points in each measurement area is 1 or less. In addition, a cylindrical target is provided, that is, one or more sputtering targets are prepared, and the sputtering target is bonded to a backing tube made of Ti, Cu, or an alloy containing these metals. The characteristic of the target is that it is divided into four parts at equal intervals in the axial direction, and then each of the four parts is divided into 16 regions at intervals of 0°, 90°, 180° and 270° in the circumferential direction. Each of the above 16 areas is used as a measurement area, and at this time, the color difference ΔE*ab at two predetermined points in each measurement area is below 1.

根据本发明的圆筒形靶材的相对密度优选在99%以上。The relative density of the cylindrical target according to the present invention is preferably above 99%.

发明效果Invention effect

采用本发明,可提供一种圆筒形靶材以及将其接合在背衬管上的圆筒形靶,所述圆筒形靶材通过保证既考虑到涉及圆筒形靶材的特性的个别影响溅射的因素的观察结果,有考虑到宏观而综合地观察靶材整体的结果的靶整体的均匀化,不仅将各种块体特性(晶粒尺寸、相对密度、块体电阻值、表面粗糙度等)分别设置在适合的范围内,还可抑制以往无法防止的出现电弧、出现结节、出现裂纹的情况。With the present invention, it is possible to provide a cylindrical target material and a cylindrical target bonded to a backing tube which ensure that both the individual Observation results of factors affecting sputtering, the uniformization of the target as a result of comprehensively observing the overall target in consideration of the macro, not only the various bulk properties (grain size, relative density, bulk resistance value, surface Roughness, etc.) are set within appropriate ranges, and the occurrence of arcs, nodules, and cracks that could not be prevented in the past can also be suppressed.

再有,采用本发明,通过在背衬管上接合多个圆筒形靶,在构成任意长度的圆筒形溅射靶时可获得特别有利的效果。即在将多个靶接合在背衬管上时,存在的问题是:即使所结合的圆筒形靶材中只包括一个出现电弧的靶,则其他没有问题的圆筒形靶材也会浪费掉。采用本发明,可剔除通过局部、单独分析无法看出的有问题的圆筒形靶材后再接合到背衬管上,预防浪费其他没有问题的圆筒形靶材的问题。Furthermore, according to the present invention, a particularly advantageous effect can be obtained when a cylindrical sputtering target of arbitrary length is formed by joining a plurality of cylindrical targets to the backing tube. That is, when a plurality of targets are bonded to the backing tube, there is a problem that even if only one target with an arc is included in the bonded cylindrical targets, other cylindrical targets that have no problem will be wasted. Lose. According to the present invention, problematic cylindrical targets that cannot be seen through local and individual analysis can be removed and then bonded to the backing tube, preventing the waste of other good cylindrical targets.

附图说明Description of drawings

图1是示出测量圆筒形靶的晶粒尺寸、色差ΔE*ab以及表面粗糙度的区域的图。FIG. 1 is a graph showing areas where the grain size, color difference ΔE*ab, and surface roughness of a cylindrical target are measured.

图2是示出测量圆筒形靶的晶粒尺寸、色差ΔE*ab以及表面粗糙度的区域的图。FIG. 2 is a graph showing areas where the grain size, color difference ΔE*ab, and surface roughness of a cylindrical target are measured.

图3是以靶材的展开图示出测量圆筒形靶的晶粒尺寸、色差ΔE*ab以及表面粗糙度区域的图。Fig. 3 is a diagram showing the measured crystal grain size, color difference ΔE*ab, and surface roughness area of a cylindrical target as an expanded view of the target material.

具体实施方式Detailed ways

以下参照附图对本发明涉及的圆筒形靶材及其制造方法进行说明。但是,本发明的圆筒形靶材及其制造方法可以以多种不同的方式实施,并不解释为限于下面示出的实施方式记载的内容。此外,在本实施方式参照的附图中,对同一部分或具有同样功能的部分采用相同的附图标记,并省略重复的说明。The cylindrical target material and its manufacturing method according to the present invention will be described below with reference to the drawings. However, the cylindrical target material and its manufacturing method of the present invention can be implemented in various forms, and should not be construed as being limited to the contents described in the embodiments shown below. In addition, in the drawings referred to in this embodiment, the same reference numerals are assigned to the same parts or parts having the same functions, and overlapping descriptions will be omitted.

本发明的圆筒形靶材可通过各种原料粉末的混合、粉碎、烧结等工艺来制作。例如,以IGZO溅射靶的情况为例进行说明。分别准备氧化铟(In2O3)粉末、氧化镓(Ga2O3)粉末、氧化锌(ZnO)粉末、以及氧化锡(SnO2)粉末作为原料粉末。The cylindrical target material of the present invention can be produced by processes such as mixing, crushing, and sintering of various raw material powders. For example, the case of an IGZO sputtering target will be described as an example. Indium oxide (In 2 O 3 ) powder, gallium oxide (Ga 2 O 3 ) powder, zinc oxide (ZnO) powder, and tin oxide (SnO 2 ) powder were prepared as raw material powders.

按所需的成分比例对原料粉末进行称重后进行混合。如果混合不充分,则制造的靶中各成分偏析,会存在高电阻率区域和低电阻率区域。因此,需要充分混合。例如使用超级搅拌机,转数2000~4000rpm,旋转时间3~5分钟来混合。或者使用球磨机进行长时间混合等方法也不错,其他方法的话只要是能实现原料的均匀混合的方法即可,没有特殊限制。The raw material powders are weighed and mixed in the desired proportion of ingredients. If the mixing is insufficient, the components in the produced target will segregate, and there will be high resistivity regions and low resistivity regions. Therefore, thorough mixing is required. For example, use a super mixer with a rotation speed of 2000-4000 rpm and a rotation time of 3-5 minutes for mixing. Alternatively, a method such as mixing with a ball mill for a long time is also good, and other methods are not particularly limited as long as they can achieve uniform mixing of the raw materials.

然后,通过在大气气氛下用电炉将混合粉末加热到900~1100℃的温度范围并保持4~6小时左右,来对混合粉末进行预烧。但是,根据包括烧结条件的靶制造工艺条件的优化,不一定非要预烧,也可以不预烧。如果进行预烧,则进行精磨。如果不充分进行精磨,则会存在粒径大的原料粉末,会导致溅射靶的面内出现成分不均匀。将预烧粉末投入超细磨碎机中,进行转数200~400rpm、选择时间2~4小时的精磨。Then, the mixed powder is calcined by heating the mixed powder to a temperature range of 900 to 1100° C. in an electric furnace in an air atmosphere and maintaining it for about 4 to 6 hours. However, depending on the optimization of target manufacturing process conditions including sintering conditions, pre-firing is not always necessary or may not be required. If pre-fired, fine-grinded. If finish grinding is not performed sufficiently, raw material powder with a large particle size will exist, and composition unevenness will arise in the surface of a sputtering target. The pre-calcined powder is put into an ultrafine pulverizer, and the fine grinding is carried out at a rotation speed of 200-400 rpm and a selected time of 2-4 hours.

然后进行造粒。这是为了改善原料粉末的流动性,使冲压成型时的充填情况足够好。调整水分含量使精磨后的原料呈固体成分为40~60%的浆体并进行造粒。Then granulate. This is to improve the fluidity of the raw material powder, so that the filling condition during stamping is good enough. The water content is adjusted so that the finely ground raw material is a slurry with a solid content of 40-60%, and then granulated.

然后使用静液压装置(CIP)以例如1700~1900kGf/cm2的表面压力保持1~3分钟的条件对造粒粉末进行成形。Then, the granulated powder is shaped using a hydrostatic device (CIP) under the condition of maintaining a surface pressure of, for example, 1700 to 1900 kGf/cm 2 for 1 to 3 minutes.

通过在氧气气氛中使用电炉例如将成形后的圆筒形靶加热到1400~1500℃,之后保持10~30小时,可得到烧结体。A sintered body can be obtained by heating the molded cylindrical target to, for example, 1400 to 1500° C. using an electric furnace in an oxygen atmosphere, and then maintaining it for 10 to 30 hours.

通常,为了提高相对密度,优选尽量在高温下进行长时间烧结,但为了控制晶粒的值,需要避免不必要的高温、长时间烧结。可根据烧结温度和烧结时间将晶粒尺寸和相对密度控制为所需的值。Generally, in order to increase the relative density, it is preferable to carry out sintering at a high temperature for a long time as much as possible, but in order to control the value of crystal grains, it is necessary to avoid unnecessary high temperature and long time sintering. The grain size and relative density can be controlled to desired values according to the sintering temperature and sintering time.

最后进行烧结体的表面研磨。通过研磨,确保表面的平整度。Finally, surface grinding of the sintered body is performed. Grinding ensures the flatness of the surface.

经由In或包含In的粘合材料将一个以上的通过研磨确保了表面平整度的圆筒形靶材接合在背衬管上,从而形成圆筒形靶。此外,背衬管的材质没有特殊限制。背衬管所使用的金属通常是Ti、Cu或含有Ti和/或Cu的合金等。One or more cylindrical targets whose surface flatness is ensured by grinding are bonded to the backing tube via In or an adhesive material containing In to form a cylindrical target. In addition, the material of the backing tube is not particularly limited. The metal used for the backing tube is usually Ti, Cu or an alloy containing Ti and/or Cu.

为了明确晶粒尺寸、表面粗糙度以及色差ΔE*ab的关系,采用上述IGZO靶所代表的圆筒形靶的制造方法,改变烧结时间或烧结温度条件,分别制造出多个圆筒形IZO靶材、圆筒形ITO靶材以及圆筒形IGZO靶材,测量晶粒尺寸、表面粗糙度以及色差ΔE*ab相对密度,并作为放电试验的试样。In order to clarify the relationship between grain size, surface roughness, and color difference ΔE*ab, the above-mentioned cylindrical target manufacturing method represented by the IGZO target was used, and the sintering time or sintering temperature conditions were changed to manufacture multiple cylindrical IZO targets. Material, cylindrical ITO target and cylindrical IGZO target, measure grain size, surface roughness and color difference ΔE*ab relative density, and use it as a sample for discharge test.

此外,作为用于制造色差ΔE*ab在圆筒形靶表面的整个区域内无变化的靶材的方法,优选原料粉末粒径为30~60μm,振实密度在1.8g/cm3以上。进而,还例如在进行机械加工后进行烧结以使CIP成形体的厚度变化在0.1mm以下。In addition, as a method for producing a target in which the color difference ΔE*ab does not change over the entire surface of the cylindrical target, it is preferable that the particle size of the raw material powder is 30-60 μm, and the tap density is 1.8 g/cm 3 or more. Furthermore, for example, sintering is performed after machining so that the thickness variation of the CIP compact is 0.1 mm or less.

因此,对于根据本发明的实施例的圆筒形靶材,均在进行机械加工后进行了烧结以使CIP成形体的厚度变化在0.1mm以下。靶的形状在实施例和比较例中均统一为外径153mmφ、内径135mmφ、长度210mm。Therefore, for the cylindrical targets according to the embodiments of the present invention, all of them are machined and then sintered so that the thickness variation of the CIP molded body is less than 0.1 mm. The shape of the target was unified to an outer diameter of 153 mmφ, an inner diameter of 135 mmφ, and a length of 210 mm in Examples and Comparative Examples.

晶粒尺寸、表面粗糙度以及色差ΔE*ab的测量位置如下。如图1、图2和图3所示(靶材的展开图),将靶在靶的轴向上等间隔分成四份,再将分成四份的区域每个以0°、90°、180°和270°的间隔划分,从而划分出16个区域,将所述16个区域中的各个区域作为测量区域。各测量区域中具体的测量位置设在各测量区域的中心(对角线的交点)。但是,在各测量区域内,以将一条对角线三等分的点(两点,图2中的P1和P2)作为各测量区域内的测量点,以这两点的色差ΔE*ab作为色差ΔE*ab。像这样,不完全地测量靶材表面的色差ΔE*ab的理由是考虑到当宏观地观察靶材时,圆筒形靶材的色差ΔE*ab有时在靶的轴向両端的区域和其之间的区域上有很大差别,而本发明的目的是综合评价靶材整体。再有,因为在圆筒形靶材的圆周方向上,有时色差ΔE*ab也有很大差别。The measurement positions of the grain size, surface roughness, and color difference ΔE*ab are as follows. As shown in Figure 1, Figure 2 and Figure 3 (expanded view of the target), the target is divided into four parts at equal intervals in the axial direction of the target, and then each of the four parts is divided into 0°, 90°, 180° ° and 270°, so as to divide 16 regions, and use each region in the 16 regions as a measurement region. A specific measurement position in each measurement area is set at the center (intersection point of diagonal lines) of each measurement area. However, in each measurement area, the point (two points, P1 and P2 in Figure 2) that divides a diagonal line into three equal parts is used as the measurement point in each measurement area, and the color difference ΔE*ab of these two points is used as Color difference ΔE*ab. The reason why the chromatic aberration ΔE*ab of the surface of the target is not measured completely like this is that when the target is observed macroscopically, the chromatic aberration ΔE*ab of the cylindrical target is sometimes in the region of both ends in the axial direction of the target and therebetween. There is a large difference in the area between them, and the purpose of the present invention is to comprehensively evaluate the target as a whole. In addition, the color difference ΔE*ab may vary greatly in the circumferential direction of the cylindrical target.

作为导致这种情况的原因之一,例如是作为结晶的分布,形成了晶粒尺寸不同的群。这是由于圆筒形靶材不同于平板型靶材,在烧结时,圆筒形靶材是以垂直于轴向的状态烧结的,因此热量传递的方式根据圆筒形靶材的轴向的区域而有所不同。其他原因是例如圆筒形靶材的烧结前的圆筒形靶材的CIP成形体的厚度不同。One of the causes of this is, for example, the distribution of crystals, where groups of different crystal grain sizes are formed. This is because the cylindrical target is different from the flat target. During sintering, the cylindrical target is sintered in a state perpendicular to the axial direction, so the heat transfer method depends on the axial direction of the cylindrical target. vary by region. Another reason is that, for example, the thickness of the CIP compact of the cylindrical target before sintering is different from that of the cylindrical target.

因此,作为对烧结时热量传递的方式不同、圆筒形靶材的CIP成形体的厚度容易有所不同的区域的划分,规定了上述晶粒尺寸、表面粗糙度以及色差ΔE*ab的测量区域。此外,当圆筒形靶材的轴向长度超过210mm时,优选每50mm追加进行同样的测量。Therefore, the above-mentioned measurement areas for grain size, surface roughness, and color difference ΔE*ab are specified as divisions of areas where the thickness of the CIP molded body of the cylindrical target is likely to vary due to the difference in the heat transfer method during sintering. . In addition, when the axial length of the cylindrical target exceeds 210 mm, it is preferable to additionally perform the same measurement every 50 mm.

采用下述方法测量晶粒尺寸。首先,从靶上切下观察用试样,对切下的试样的表面实施镜面研磨。用扫描电子显微镜(SEM)对进行了镜面研磨后的试样的表面拍摄表面纹理照片,采用编码法的评价方法来测量多个视野(5点)的晶粒尺寸。The grain size was measured by the following method. First, a sample for observation is cut out from the target, and the surface of the cut sample is mirror-polished. A photograph of the surface texture of the surface of the mirror-polished sample was taken with a scanning electron microscope (SEM), and the grain size of multiple fields of view (5 points) was measured by an evaluation method of the coding method.

相对密度的测量是通过从圆筒形靶材切下20cm2的测量用试样,用阿基米德法对切下的测量用试样进行密度测量而求出的。此外,本说明书所说的相对密度是以(实际密度/理论密度)×100(%)计算出来的。此处,所谓“实际密度”可根据各测量值计算出重量/体积,但通常使用阿基米德法,本发明也采用相同方法。所谓理论密度,是在烧结体的各构成元素中,根据除氧之外的元素的氧化物的理论密度计算出的密度值。例如,是ITO靶的话,则在各构成元素铟、锡、氧中,作为除氧之外的铟、锡的氧化物,使用氧化铟(In2O3)和氧化锡(SnO2)计算理论密度。此处,根据烧结体中铟和锡的元素分析值(原子%、或质量%)换算为氧化铟(In2O3)和氧化锡(SnO2)的质量比。例如,当换算的结果是ITO靶中氧化铟90质量%、氧化锡10质量%时,计算出理论密度为(In2O3的密度(g/cm3)×90+SnO2的密度(g/cm3)×10)/100(g/cm3)。以In2O3的理论密度是7.18g/cm3,SnO2的理论密度是6.95g/cm3进行计算,计算出理论密度是7.157(g/cm3)。再有,在各构成元素是Zn时可计算氧化物ZnO,是Ga时可计算氧化物Ga2O3。以ZnO的理论密度是5.67g/cm3,Ga2O3的理论密度是5.95g/cm3进行计算。The relative density was measured by cutting out a 20 cm 2 measurement sample from a cylindrical target, and measuring the density of the cut measurement sample by the Archimedes method. In addition, the relative density referred to in this specification is calculated by (actual density/theoretical density)×100(%). Here, the so-called "actual density" can calculate weight/volume from each measured value, but the Archimedes method is usually used, and the present invention also adopts the same method. The theoretical density is a density value calculated from the theoretical density of oxides of elements other than oxygen among the constituent elements of the sintered body. For example, in the case of an ITO target, indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) are used as indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) to calculate the theoretical density. Here, the mass ratio of indium oxide (In 2 O 3 ) to tin oxide (SnO 2 ) is converted from the elemental analysis values (atomic % or mass %) of indium and tin in the sintered body. For example, when the converted result is 90% by mass of indium oxide and 10% by mass of tin oxide in the ITO target, the theoretical density is calculated as (density of In 2 O 3 (g/cm 3 )×90+density of SnO 2 (g /cm 3 )×10)/100 (g/cm 3 ). The theoretical density of In 2 O 3 is 7.18 g/cm 3 , and the theoretical density of SnO 2 is 6.95 g/cm 3 , and the calculated theoretical density is 7.157 (g/cm 3 ). In addition, the oxide ZnO can be calculated when each constituent element is Zn, and the oxide Ga 2 O 3 can be calculated when it is Ga. The calculation is performed on the assumption that the theoretical density of ZnO is 5.67 g/cm 3 and that of Ga 2 O 3 is 5.95 g/cm 3 .

使用四探针电阻测量仪进行电导率(表面块体电阻值)的测量。表面粗糙度(算术平均粗糙度,Ra)的测量使用触针式测量装置,对在1mm以下的范围内测量到的值进行多点比较,以典型值作为表面粗糙度(Ra)的值。算术平均粗糙度是基于JISB0601-2001的值,测量装置例如有SJ-210(三丰生产)等。Conductivity (surface bulk resistance) measurements were performed using a four-probe resistance meter. The surface roughness (arithmetic mean roughness, Ra) is measured using a stylus measuring device, and the values measured within the range of 1 mm or less are compared at multiple points, and the typical value is used as the surface roughness (Ra) value. The arithmetic mean roughness is a value based on JISB0601-2001, and the measuring device includes, for example, SJ-210 (manufactured by Mitutoyo).

放电试验的进行条件是:使用Ar作为溅射气体,溅射压力为0.6Pa,溅射气体流量为300sccm,溅射功率是4.0W/cm2The discharge test was performed under the following conditions: Ar was used as the sputtering gas, the sputtering pressure was 0.6 Pa, the flow rate of the sputtering gas was 300 sccm, and the sputtering power was 4.0 W/cm 2 .

将实施例1的由ITO构成的圆筒形靶材轴向等间隔分成四份,在靶的轴向上等间隔分成四份,再将分成四份的区域每个在圆周方向上以0°、90°、180°和270°的间隔划分,从而分成16个区域,在所述16个区域中的各个区域内测量到的晶粒尺寸、表面粗糙度以及色差ΔE*ab、相对密度以及体电阻的测量结果如下述表1所示。此外,在下表中,在圆周方向上分别错开90°的四个区域分别表示为A、B、C和D。The cylindrical target made of ITO in Example 1 is divided into four parts at equal intervals in the axial direction, divided into four parts at equal intervals in the axial direction of the target, and then each of the four parts is divided into four parts at 0° in the circumferential direction , 90°, 180° and 270° intervals, thus divided into 16 regions, the grain size, surface roughness and color difference ΔE*ab, relative density and volume measured in each of the 16 regions The measurement results of resistance are shown in Table 1 below. In addition, in the table below, the four areas respectively shifted by 90° in the circumferential direction are denoted as A, B, C, and D, respectively.

[表1][Table 1]

将实施例2的由ITO构成的圆筒形靶材轴向等间隔分成四份,在靶的轴向上等间隔分成四份,再将分成四份的区域每个在圆周方向上以0°、90°、180°和270°的间隔划分,从而分成16个区域,在所述16个区域中的各个区域内测量到的晶粒尺寸、表面粗糙度以及色差ΔE*ab、相对密度以及块体电阻的测量结果如下述表2所示。The cylindrical target made of ITO in Example 2 is divided into four parts at equal intervals in the axial direction, and divided into four parts at equal intervals in the axial direction of the target. , 90°, 180° and 270° interval division, thus divided into 16 regions, the grain size, surface roughness and color difference ΔE*ab, relative density and mass measured in each of the 16 regions The measurement results of bulk resistance are shown in Table 2 below.

[表2][Table 2]

将比较例1的由ITO构成的圆筒形靶材轴向等间隔分成四份,在靶的轴向上等间隔分成四份,再将分成四份的区域每个在圆周方向上以0°、90°、180°和270°的间隔划分,从而分成16个区域,在所述16个区域中的各个区域内的晶粒尺寸、表面粗糙度以及色差ΔE*ab、相对密度以及块体电阻的测量结果如下述表3所示。The cylindrical target made of ITO in Comparative Example 1 is divided into four parts at equal intervals in the axial direction, divided into four parts at equal intervals in the axial direction of the target, and then each of the four parts is divided into four parts at 0° in the circumferential direction , 90°, 180° and 270° interval division, thus divided into 16 regions, the grain size, surface roughness and color difference ΔE*ab, relative density and bulk resistance in each of the 16 regions The measurement results are shown in Table 3 below.

[表3][table 3]

将实施例3的由IGZO构成的圆筒形靶材轴向等间隔分成四份,在靶的轴向上等间隔分成四份,再将分成四份的区域每个在圆周方向上以0°、90°、180°和270°的间隔划分,从而分成16个区域,在所述16个区域中的各个区域内的晶粒尺寸、表面粗糙度以及色差ΔE*ab、相对密度以及块体电阻的测量结果如下述表4所示。The cylindrical target made of IGZO in Example 3 is divided into four parts at equal intervals in the axial direction, divided into four parts at equal intervals in the axial direction of the target, and then each of the four parts is divided into four parts at 0° in the circumferential direction , 90°, 180° and 270° interval division, thus divided into 16 regions, the grain size, surface roughness and color difference ΔE*ab, relative density and bulk resistance in each of the 16 regions The measurement results are shown in Table 4 below.

[表4][Table 4]

将实施例4的由IGZO构成的圆筒形靶材轴向等间隔分成四份,在靶的轴向上等间隔分成四份,再将分成四份的区域每个在圆周方向上以0°、90°、180°和270°的间隔划分,从而分成16个区域,在所述16个区域中的各个区域内的晶粒尺寸、表面粗糙度以及色差ΔE*ab、相对密度以及块体电阻的测量结果如下述表5所示。The cylindrical target made of IGZO in Example 4 is divided into four parts at equal intervals in the axial direction of the target, and divided into four parts at equal intervals in the axial direction of the target, and then each of the four parts is divided into four parts at 0° in the circumferential direction , 90°, 180° and 270° interval division, thus divided into 16 regions, the grain size, surface roughness and color difference ΔE*ab, relative density and bulk resistance in each of the 16 regions The measurement results are shown in Table 5 below.

[表5][table 5]

将比较例2的由IGZO构成的圆筒形靶材轴向等间隔分成四份,在靶的轴向上等间隔分成四份,再将分成四份的区域每个在圆周方向上以0°、90°、180°和270°的间隔划分,从而分成16个区域,在所述16个区域中的各个区域内,晶粒尺寸、表面粗糙度以及色差ΔE*ab、相对密度以及块体电阻的测量结果如下述表6所示。The cylindrical target made of IGZO in Comparative Example 2 was divided into four parts at equal intervals in the axial direction, and divided into four parts at equal intervals in the axial direction of the target. , 90°, 180° and 270° interval division, thus divided into 16 regions, in each of the 16 regions, the grain size, surface roughness and color difference ΔE*ab, relative density and bulk resistance The measurement results are shown in Table 6 below.

[表6][Table 6]

将实施例5的由IZO构成的圆筒形靶材轴向等间隔分成四份,在靶的轴向上等间隔分成四份,再将分成四份的区域每个在圆周方向上以0°、90°、180°和270°的间隔划分,从而分成16个区域,在所述16个区域中的各个区域内的晶粒尺寸、表面粗糙度以及色差ΔE*ab、相对密度以及块体电阻的测量结果如下述表7所示。The cylindrical target made of IZO in Example 5 is divided into four parts at equal intervals in the axial direction, and divided into four parts at equal intervals in the axial direction of the target. , 90°, 180° and 270° interval division, thus divided into 16 regions, the grain size, surface roughness and color difference ΔE*ab, relative density and bulk resistance in each of the 16 regions The measurement results are shown in Table 7 below.

[表7][Table 7]

将实施例6的由IZO构成的圆筒形靶材轴向等间隔分成四份,在靶的轴向上等间隔分成四份,再将分成四份的区域每个在圆周方向上以0°、90°、180°和270°的间隔划分,从而分成16个区域,在所述16个区域中的各个区域内的晶粒尺寸、表面粗糙度以及色差ΔE*ab、相对密度以及块体电阻的测量结果如下述表8所示。The cylindrical target made of IZO in Example 6 is divided into four parts at equal intervals in the axial direction, divided into four parts at equal intervals in the axial direction of the target, and then each of the four parts is divided into four parts at 0° in the circumferential direction , 90°, 180° and 270° interval division, thus divided into 16 regions, the grain size, surface roughness and color difference ΔE*ab, relative density and bulk resistance in each of the 16 regions The measurement results are shown in Table 8 below.

[表8][Table 8]

将比较例3的由IZO构成的圆筒形靶材轴向等间隔分成四份,在靶的轴向上等间隔分成四份,再将分成四份的区域每个在圆周方向上以0°、90°、180°和270°的间隔划分,从而分成16个区域,在所述16个区域中的各个区域内的晶粒尺寸、表面粗糙度以及色差ΔE*ab、相对密度以及块体电阻的测量结果如下述表9所示。The cylindrical target made of IZO in Comparative Example 3 was divided into four parts at equal intervals in the axial direction, divided into four parts at equal intervals in the axial direction of the target, and each of the four parts was divided into four parts at 0° in the circumferential direction. , 90°, 180° and 270° interval division, thus divided into 16 regions, the grain size, surface roughness and color difference ΔE*ab, relative density and bulk resistance in each of the 16 regions The measurement results are shown in Table 9 below.

[表9][Table 9]

在比较例1中,在放电试验中确认在第1区域和第4区域上出现结节。第1区域的C区域的色差ΔE*ab是1.097。第4区域上C区域的色差ΔE*ab是1.162。推测当靶材的颜色差异达到各区域内的色差ΔE*ab超过1.0时,会导致出现结节。另一方面,在实施例1和2中,相邻区域的色差ΔE*ab均不到1.0。In Comparative Example 1, nodules were confirmed to appear in the first region and the fourth region in the discharge test. The color difference ΔE*ab of the area C of the first area is 1.097. The color difference ΔE*ab of the area C on the 4th area is 1.162. It is speculated that when the color difference of the target reaches the color difference ΔE*ab in each area exceeding 1.0, nodules will appear. On the other hand, in Examples 1 and 2, the color difference ΔE*ab of adjacent regions was less than 1.0.

在比较例2中,在放电试验中确认在第1区域和第4区域的周围出现裂纹。第1区域的D区域的色差ΔE*ab是1.364。第4区域的D区域的色差ΔE*ab是1.528。推测当靶材的颜色差异达到各区域内的色差ΔE*ab超过1.0时,会导致出现裂纹。另一方面,在实施例3和4中,各区域的色差ΔE*ab不到1.0。In Comparative Example 2, it was confirmed that cracks appeared around the first region and the fourth region in the discharge test. The color difference ΔE*ab of the area D in the first area is 1.364. The color difference ΔE*ab of the D area of the fourth area is 1.528. It is presumed that when the color difference of the target material reaches the color difference ΔE*ab in each region exceeding 1.0, cracks will occur. On the other hand, in Examples 3 and 4, the color difference ΔE*ab of each area was less than 1.0.

在比较例3中,在放电试验中确认在整个圆筒形靶材上出现裂纹。第1区域的D区域的色差ΔE*ab是2.150。再有,第3区域的D区域的色差ΔE*ab是1.722。进而,第4区域的D区域的色差ΔE*ab是3.045。推测当靶材的颜色差异达到各区域内的色差ΔE*ab超过1.0时,会导致出现裂纹。另一方面,在实施例5和6中,各区域的色差ΔE*ab不到1.0。In Comparative Example 3, it was confirmed in the discharge test that cracks appeared throughout the cylindrical target. The color difference ΔE*ab of the area D in the first area is 2.150. In addition, the color difference ΔE*ab of the D area of the third area is 1.722. Furthermore, the color difference ΔE*ab of the D area of the fourth area is 3.045. It is presumed that when the color difference of the target material reaches the color difference ΔE*ab in each region exceeding 1.0, cracks will occur. On the other hand, in Examples 5 and 6, the color difference ΔE*ab of each area was less than 1.0.

通过上述内容,可以说当各区域内的色差ΔE*ab不到1.0时,溅射时不会出现电弧、结节等。另一方面,一旦色差ΔE*ab在1.0以上,则会出现电弧等。当色差ΔE*ab在1.0~3.0左右时,虽然目视色差基本不明显,但通过实验,发现即使存在像这样目视无法辨别的色差也会出现电弧等。此外,从晶粒尺寸和色差Δ*ab的关系看,例如看比较IGZO的圆筒形靶材的比较例2的分析结果即表6,可知晶粒尺寸的尺寸和色差ΔE*ab之间是相关联的。但是,看IZO的圆筒形靶的比较例即比较例3,可知尽管晶粒尺寸与IZO的圆筒形靶的实施例的粒径尺寸相同,但色差ΔE*ab的值不同,出现裂纹。另一方面,在控制使各区域内的色差ΔE*ab不到1.0的实施例中,通过没有出现裂纹或结节可以看出,只要控制使各区域内的色差ΔE*ab不到1.0,就可防止出现裂纹或结节。From the above, it can be said that when the color difference ΔE*ab in each region is less than 1.0, arcs, nodules, etc. will not occur during sputtering. On the other hand, when the color difference ΔE*ab becomes 1.0 or more, arcing or the like occurs. When the color difference ΔE*ab is about 1.0 to 3.0, the visual color difference is basically not obvious, but through experiments, it was found that even if there is such a color difference that cannot be discerned visually, arcing and the like will occur. In addition, from the relationship between the grain size and the color difference Δ*ab, for example, see Table 6, the analysis result of Comparative Example 2, which compares IGZO cylindrical targets, and it can be seen that the relationship between the grain size and the color difference ΔE*ab is associated. However, looking at Comparative Example 3, which is a comparative example of a cylindrical IZO target, it can be seen that although the crystal grain size is the same as that of the Example of a cylindrical IZO target, the value of the color difference ΔE*ab is different, and cracks appear. On the other hand, in the embodiment where the color difference ΔE*ab in each area is controlled to be less than 1.0, it can be seen from the absence of cracks or nodules that as long as the color difference ΔE*ab in each area is controlled to be less than 1.0, the Prevents cracks or nodules from appearing.

本发明并不限于上述实施方式,在不脱离主旨的范围内可以进行适当变化。The present invention is not limited to the above-described embodiments, and appropriate changes can be made without departing from the gist.

Claims (7)

1. a kind of cylinder-shaped ceramic sputtering target material is axial length in 210mm cylinder-shaped ceramic sputtering target materials below, feature It is:
The cylindrical shape target is axially divided into four parts at equal intervals, then will be divided into four parts of region each in a circumferential direction with 0 °, 90 °, 180 ° and 270 ° of interval is divided into each region, in described each region 2 points of aberration Δ E*ab less than 1.0。
2. a kind of cylinder-shaped ceramic sputtering target material, is the cylinder-shaped ceramic sputtering target material that axial length is more than 210mm, feature exists In:
From one end of the cylinder-shaped ceramic sputtering target material to 210mm, the cylindrical shape target is axially divided at equal intervals At four parts, then the region for being divided into four parts is each divided into 0 °, 90 °, 180 ° and 270 ° of interval in a circumferential direction each Region, in described each region 2 points of aberration Δ E*ab less than 1.0,
Be more than from one end of the cylinder-shaped ceramic sputtering target material 210mm region in, by the cylindrical shape target in axial direction Per 50mm, segmentation is primary, then the region after segmentation is each divided with 0 °, 90 °, 180 ° and 270 ° of interval in a circumferential direction At each region, 2 points of aberration Δ E*ab is less than 1.0 in described each region.
3. cylinder-shaped ceramic sputtering target material according to claim 1 or 2, it is characterised in that:
The relative density measured in the measured zone is 99% or more.
4. cylinder-shaped ceramic sputtering target material according to any one of claims 1 to 3, it is characterised in that:
The average grain size measured in the measured zone is at 10 μm or less.
5. the cylinder-shaped ceramic sputtering target material according to any one of Claims 1 to 4, it is characterised in that:
The surface roughness measured in the measured zone is at 0.5 μm or less.
6. the cylinder-shaped ceramic sputtering target material according to any one of Claims 1 to 5, it is characterised in that:
The cylinder-shaped ceramic sputtering target material is made of ITO, IGZO or IZO.
7. a kind of cylinder-shaped ceramic sputtering target, it is characterised in that:
Cylinder-shaped ceramic sputtering target material described in any one of more than one claim 1~6 is incorporated on backing pipe.
CN201780005879.0A 2016-01-28 2017-01-26 Cylindrical ceramic sputtering target and cylindrical ceramic sputtering target formed by joining one or more cylindrical ceramic sputtering targets on the backing tube Pending CN108431293A (en)

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Application publication date: 20180821