CN108417599A - Testing of materials device of white light OLED and preparation method thereof - Google Patents
Testing of materials device of white light OLED and preparation method thereof Download PDFInfo
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- CN108417599A CN108417599A CN201810106050.6A CN201810106050A CN108417599A CN 108417599 A CN108417599 A CN 108417599A CN 201810106050 A CN201810106050 A CN 201810106050A CN 108417599 A CN108417599 A CN 108417599A
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- 238000004154 testing of material Methods 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title description 3
- 238000002161 passivation Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 216
- 230000004888 barrier function Effects 0.000 claims description 38
- 239000002346 layers by function Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 12
- 229910004205 SiNX Inorganic materials 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 24
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 238000012545 processing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Abstract
The invention discloses a kind of testing of materials devices of white light OLED comprising：Substrate；The metal pattern layer being set on the substrate；The inorganic passivation layer being covered in the metal pattern layer and the substrate；The color light resistance layer being set on the inorganic passivation layer on the substrate；And it is set to the white-light organic light-emitting portion in the color light resistance layer.The invention also discloses a kind of production methods of the testing of materials device of white light OLED.The present invention is by being arranged inorganic passivation layer, the organic photoresist layer being coated with when making color light resistance layer is set to can be good at being attached on inorganic passivation layer, to improve the adhesive force for making color light resistance layer and inorganic passivation layer, while improving the homogeneity for the organic photoresist layer for making color light resistance layer.
Description
Technical field
The invention belongs to organic display technical fields, in particular, be related to a kind of white light OLED testing of materials device and
Its production method.
Background technology
The manufacturing process of testing of materials (Material Test) device of traditional white light OLED is：Successively on substrate
Make metal layer, color light resistance layer, the first inorganic barrier layer, anode, the second inorganic barrier layer, organic luminescent device and cathode.
In the manufacturing process of the testing of materials device of traditional white light OLED, after the processing procedure for completing metal layer, into coloured silk
In the processing procedures of organic photoresist layer such as coloured light resistance layer, the first inorganic barrier layer, need on the metal layer first whole face be coated with organic photoresist
Layer, then be exposed and develop；And the adhesive force of organic photoresist layer on the metal layer is poor, often results in organic photoresist tunic
It is broken, to influence the homogeneity of organic photoresist layer film thickness.
Invention content
In order to solve the above-mentioned problems of the prior art, the purpose of the present invention is to provide one kind capable of improving organic light
Testing of materials device of white light OLED of the adhesive force of resistance layer and metal layer and preparation method thereof.
According to an aspect of the present invention, a kind of testing of materials device of white light OLED is provided comprising：Substrate；Setting
Metal pattern layer on the substrate；The inorganic passivation layer being covered in the metal pattern layer and the substrate；It is set to
Color light resistance layer on the inorganic passivation layer on the substrate；And the white light being set in the color light resistance layer is organic
Illumination region.
Further, the white-light organic light-emitting portion includes：The first Organic barrier being covered in the color light resistance layer
Layer；Anode on first inorganic barrier layer and the inorganic passivation layer is set, and the anode runs through the inorganic passivation
Layer with the metal pattern layer to connect；The second inorganic barrier layer being set on the anode, second inorganic barrier layer
In there is the pixel of the exposure anode to limit hole；Being set to the white light that the pixel limits in hole and on the anode has
Machine light emitting functional layer；And it is set to the cathode in the white-light organic light-emitting functional layer.
Further, the pixel limits hole and the color light resistance layer face.
Further, from the anode to the cathode, sequence includes the white-light organic light-emitting functional layer：Hole occurs
Layer, hole transmission layer, white-light organic light-emitting layer, electron transfer layer, electron injecting layer.
Further, the inorganic passivation layer is by SiNxOr SiOxThe single layer structure or described inorganic being made
Passivation layer is by SiNxAnd SiOxThe double-layer structure being made.
According to another aspect of the present invention, a kind of production method of the testing of materials device of white light OLED is additionally provided,
Including：One substrate is provided；Metal pattern layer is formed on the substrate；It is formed in the metal pattern layer and the substrate
Inorganic passivation layer；Color light resistance layer is formed on the inorganic passivation layer on the substrate；And in the color light resistance layer
Upper formation white-light organic light-emitting portion.
Further, the method packet in white-light organic light-emitting portion is formed in the color light resistance layer and the inorganic passivation layer
It includes：The first inorganic barrier layer is formed in the color light resistance layer；In first inorganic barrier layer and the inorganic passivation layer
Upper formation anode, the anode is through the inorganic passivation layer to be connect with the metal pattern layer；It is formed on the anode
Pixel with the exposure anode limits second inorganic barrier layer in hole；It limits in the pixel and is formed in vain on the anode in hole
Light organic luminescence function layer；And form cathode in the white-light organic light-emitting functional layer.
Further, when forming the pixel restriction hole in second inorganic barrier layer, the pixel is made to limit hole
With the color light resistance layer face.
Further, limiting the method that white-light organic light-emitting functional layer is formed on the anode in hole in the pixel includes：
The pixel limit hole in anode on sequentially form lamination hole occur layer, hole transmission layer, white-light organic light-emitting layer,
Electron transfer layer, electron injecting layer.
Beneficial effects of the present invention：The present invention makes making the first inorganic barrier layer and coloured silk by the way that inorganic passivation layer is arranged
The organic photoresist layer being coated with when coloured light resistance layer can be good at being attached on inorganic passivation layer, organic to improve making first
The adhesive force of barrier layer and color light resistance layer and inorganic passivation layer, while improving and making the first inorganic barrier layer and chromatic photoresist
The homogeneity of organic photoresist layer of layer.
Description of the drawings
What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, features and advantages of the embodiment of the present invention
It will become clearer, in attached drawing：
Fig. 1 is the structural schematic diagram of the testing of materials device of white light OLED according to an embodiment of the invention；
Fig. 2A to Fig. 2 E is the processing procedure figure of the testing of materials device of white light OLED according to an embodiment of the invention；
Fig. 3 A to Fig. 3 E are the processing procedure figures in white-light organic light-emitting portion according to an embodiment of the invention.
Specific implementation mode
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations
Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.
In the accompanying drawings, for the sake of clarity, the thickness of layer and region is exaggerated.Identical label is in the whole instruction and attached
Identical component is indicated in figure.
It will be appreciated that when the element of layer, film, region or substrate etc. element "upper" another referred to as " ", it should
Element can be directly on another element, or there may also be intermediary elements.Selectively, when element is referred to as " directly
Be connected on " another element "upper" when, be not present intermediary element.
Fig. 1 is the structural schematic diagram of the testing of materials device of white light OLED according to an embodiment of the invention.
Referring to Fig.1, the testing of materials device of white light OLED according to an embodiment of the invention includes：Substrate 100, metal figure
Pattern layer 200, inorganic passivation layer 500, color light resistance layer 300 and white-light organic light-emitting portion 400.
Metal pattern layer 200 is set on substrate 100.In the present embodiment, metal pattern layer 200 is by using light shield pair
Layer of metal film layer carries out yellow light technique and is molded.For example, make when metal pattern layer 200 can be formed it is U-shaped, but the present invention
It is not restricted to this.
Inorganic passivation layer 500 is set on metal pattern layer 200 and substrate 100.In the present embodiment, inorganic passivation layer
500 can be for example by SiNxOr SiOxThe single layer structure or inorganic passivation layer 500 being made can be by SiNxWith
SiOxThe double-layer structure being made, the present invention are simultaneously not especially limited.
Color light resistance layer 300 is set on the part of inorganic passivation layer 500 being located on substrate 100.In the present embodiment,
Color light resistance layer 300 can be for example red photoresist layer, blue light resistance layer or green photoresist layer, and the present invention does not make specifically to limit
It is fixed.
White-light organic light-emitting portion 400 is set in color light resistance layer 300.White-light organic light-emitting portion 400 is used for downward (i.e. court
To the direction of color light resistance layer 300) transmitting light.
Here, due to being provided with inorganic passivation layer, the organic photoresist layer being coated with when making color light resistance layer 300 (is used for
Make organic photoresist layer of color light resistance layer 300) it can be good at being attached on inorganic passivation layer 500, it is made to improve
The adhesive force of the organic photoresist layer and inorganic passivation layer 500 of color light resistance layer 300, while improving and making color light resistance layer 300
Organic photoresist layer homogeneity.
Further, in the present embodiment, white-light organic light-emitting portion 400 includes：First inorganic barrier layer 410, anode
420, the second inorganic barrier layer 430, white-light organic light-emitting functional layer 440 and cathode 450.
First inorganic barrier layer 410 is set to being located in the interval of color light resistance layer 300 and inorganic passivation layer 500
On part.In this way, due to being provided with inorganic passivation layer, the organic photoresist layer being coated with when making the first inorganic barrier layer 410 (is used
In the organic photoresist layer for making the first inorganic barrier layer 410) can be good at being attached to inorganic passivation layer 500 be located at it is described between
On part in, to improve the attachment of the organic photoresist layer and inorganic passivation layer 500 that make the first inorganic barrier layer 410
Power, while improving the homogeneity for the organic photoresist layer for making the first inorganic barrier layer 410.
Anode 420 is set to the part of the first inorganic barrier layer 410 and inorganic passivation layer 500 being located in the interval
On.In the present embodiment, anode 420 has high reflectivity.Anode 420 through inorganic passivation layer 500 with metal pattern layer 200
Connection contact.
Second inorganic barrier layer 430 is set on anode 420, and has exposure anode in the second inorganic barrier layer 430
420 pixel limits hole 431.Further, in order to make white-light organic light-emitting functional layer 440 and 300 face of color light resistance layer, with
Improve light utilization, it is preferable that pixel is made to limit hole 431 and 300 face of color light resistance layer.
White-light organic light-emitting functional layer 440 is set to pixel and limits in hole 431 and on anode 420；Cathode 450 is arranged
In in white-light organic light-emitting functional layer 440.In the present embodiment, cathode 450 has high transmittance.
Further, as an example, further, white-light organic light-emitting functional layer 440 is from anode 420 to cathode
450 sequences include：Layer, hole transmission layer, white-light organic light-emitting layer, electron transfer layer, electron injecting layer occur for hole.Here,
White-light organic light-emitting layer sends out white light.
The production method of the testing of materials device of white light OLED according to an embodiment of the invention is retouched in detail below
It states.Fig. 2A to Fig. 2 E is the processing procedure figure of the testing of materials device of white light OLED according to an embodiment of the invention.
The production method of the testing of materials device of white light OLED according to an embodiment of the invention includes：
Step 1：With reference to Fig. 2A, a substrate 100 is provided.
Step 2：With reference to Fig. 2 B, metal pattern layer 200 is formed on the substrate 100.
Step 3：With reference to Fig. 2 C, inorganic passivation layer 500 is formed in metal pattern layer 200 and substrate 100.
Step 4：With reference to Fig. 2 D, color light resistance layer 300 is formed in being located on substrate 100 for inorganic passivation layer 500.
Step 5：With reference to Fig. 2 E, white-light organic light-emitting portion 400 is formed in color light resistance layer 300.
Further, Fig. 3 A to Fig. 3 E are the processing procedure figures in white-light organic light-emitting portion according to an embodiment of the invention.
In step 5, the method that white-light organic light-emitting portion 400 is formed in color light resistance layer 300 includes：
First, with reference to Fig. 3 A, on the part of color light resistance layer 300 and inorganic passivation layer 500 being located in the interval
Form the first inorganic barrier layer 410.
Secondly, with reference to Fig. 3 B, in the portion of the first inorganic barrier layer 410 and inorganic passivation layer 500 being located in the interval
Anode 420 is formed on point, and makes anode 420 through inorganic passivation layer 500 to be contacted with metal pattern layer 200.
Then, with reference to Fig. 3 C, it is organic that second that there is the pixel of exposure anode 420 to limit hole 431 is formed on anode 420
Barrier layer 430.Here, anode 420 has high reflectance.In addition, in order to make white-light organic light-emitting functional layer 440 and chromatic photoresist
300 face of layer, to improve light utilization, it is preferable that pixel is made to limit hole 431 and 300 face of color light resistance layer.
Then, it with reference to Fig. 3 D, is limited in pixel and forms white-light organic light-emitting functional layer 440 on the anode 420 in hole 431.
Further, layer, hole transmission layer, white light occur for the hole for lamination being sequentially formed on the anode 420 in pixel restriction hole 431
Organic luminous layer, electron transfer layer, electron injecting layer.
Finally, it with reference to Fig. 3 E, is made in white-light organic light-emitting functional layer 440 and forms cathode 450.Here, cathode 450 has
There is high transmittance.
In conclusion the present embodiment makes making the first inorganic barrier layer and chromatic photoresist by the way that inorganic passivation layer is arranged
The organic photoresist layer being coated with when layer can be good at being attached on inorganic passivation layer, and the first inorganic barrier layer is made to improve
With the adhesive force of color light resistance layer and inorganic passivation layer, while improving and making having for the first inorganic barrier layer and color light resistance layer
The homogeneity of machine photoresist layer.
Although the present invention has shown and described with reference to specific embodiment, it should be appreciated by those skilled in the art that：
In the case where not departing from the spirit and scope of the present invention limited by claim and its equivalent, can carry out herein form and
Various change in details.
Claims (10)
1. a kind of testing of materials device of white light OLED, which is characterized in that including：
Substrate；
The metal pattern layer being set on the substrate；
The inorganic passivation layer being covered in the metal pattern layer and the substrate；
The color light resistance layer being set on the inorganic passivation layer on the substrate；And
It is set to the white-light organic light-emitting portion in the color light resistance layer.
2. the testing of materials device of white light OLED according to claim 1, which is characterized in that the white-light organic light-emitting portion
Including：
The first inorganic barrier layer being covered in the color light resistance layer；
Anode on first inorganic barrier layer and the inorganic passivation layer is set, and the anode runs through the inorganic passivation
Layer with the metal pattern layer to connect；
The second inorganic barrier layer being set on the anode has the picture of the exposure anode in second inorganic barrier layer
Element limits hole；
It is set to the pixel and limits the white-light organic light-emitting functional layer in hole and being located on the anode；And
The cathode being set in the white-light organic light-emitting functional layer.
3. the testing of materials device of white light OLED according to claim 2, which is characterized in that the pixel limits hole and institute
State color light resistance layer face.
4. the testing of materials device of white light OLED according to claim 2 or 3, which is characterized in that the organic hair of white light
From the anode to the cathode, sequence includes light functional layer：Layer, hole transmission layer, white-light organic light-emitting layer, electricity occur for hole
Sub- transport layer, electron injecting layer.
5. the testing of materials device of white light OLED according to claim 1, which is characterized in that the inorganic passivation layer is served as reasons
SiNxOr SiOxThe single layer structure or the inorganic passivation layer being made are by SiNxAnd SiOxThe bilayer being made
Structure.
6. a kind of production method of the testing of materials device of white light OLED, which is characterized in that including：
One substrate is provided；
Metal pattern layer is formed on the substrate；
Inorganic passivation layer is formed in the metal pattern layer and the substrate；
Color light resistance layer is formed on the inorganic passivation layer on the substrate；And
White-light organic light-emitting portion is formed in the color light resistance layer.
7. the production method of the testing of materials device of white light OLED according to claim 6, which is characterized in that in the coloured silk
The method in formation white-light organic light-emitting portion includes in coloured light resistance layer and the inorganic passivation layer：
The first inorganic barrier layer is formed in the color light resistance layer；
Anode is formed on first inorganic barrier layer and the inorganic passivation layer, the anode runs through the inorganic passivation layer
To be connect with the metal pattern layer；
The second inorganic barrier layer that there is the pixel of the exposure anode to limit hole is formed on the anode；
It is limited in the pixel and forms white-light organic light-emitting functional layer on the anode in hole；And
Cathode is formed in the white-light organic light-emitting functional layer.
8. the production method of the testing of materials device of white light OLED according to claim 7, which is characterized in that described
When forming the pixel restriction hole in two inorganic barrier layers, the pixel is made to limit hole and the color light resistance layer face.
9. the production method of the testing of materials device of white light OLED according to claim 2 or 3, which is characterized in that in institute
Stating the method that white-light organic light-emitting functional layer is formed on the anode in pixel restriction hole includes：The sun in hole is limited in the pixel
Layer, hole transmission layer, white-light organic light-emitting layer, electron transfer layer, electron injecting layer occur for the hole that lamination is sequentially formed on extremely.
10. the production method of the testing of materials device of white light OLED according to claim 6, which is characterized in that the nothing
Machine passivation layer is by SiNxOr SiOxThe single layer structure or the inorganic passivation layer being made are by SiNxAnd SiOxSystem
Double-layer structure made of work.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810106050.6A CN108417599A (en) | 2018-02-02 | 2018-02-02 | Testing of materials device of white light OLED and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810106050.6A CN108417599A (en) | 2018-02-02 | 2018-02-02 | Testing of materials device of white light OLED and preparation method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120169217A1 (en) * | 2011-01-03 | 2012-07-05 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
| CN103187428A (en) * | 2011-12-30 | 2013-07-03 | 乐金显示有限公司 | Organic light emitting display device and manufacturing method thereof |
| CN103219283A (en) * | 2013-03-19 | 2013-07-24 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method of array substrate and display device of array substrate |
| CN104952879A (en) * | 2015-05-05 | 2015-09-30 | 深圳市华星光电技术有限公司 | Dual-gate TFT (thin-film transistor) substrate structure using COA (color filter on array) technique |
-
2018
- 2018-02-02 CN CN201810106050.6A patent/CN108417599A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120169217A1 (en) * | 2011-01-03 | 2012-07-05 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
| CN103187428A (en) * | 2011-12-30 | 2013-07-03 | 乐金显示有限公司 | Organic light emitting display device and manufacturing method thereof |
| CN103219283A (en) * | 2013-03-19 | 2013-07-24 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method of array substrate and display device of array substrate |
| CN104952879A (en) * | 2015-05-05 | 2015-09-30 | 深圳市华星光电技术有限公司 | Dual-gate TFT (thin-film transistor) substrate structure using COA (color filter on array) technique |
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