CN108396311A - High-throughput PECVD device and method - Google Patents

Abstract

The invention discloses a high-throughput PECVD device, comprising: a reaction chamber; a deposition platform arranged in the reaction chamber, the deposition surface of the deposition platform is separated from a plurality of independent deposition micro-regions, each of the deposition micro-regions The temperature is independently adjustable; each of the deposition micro-regions corresponds to a plasma excitation unit, and each of the plasma excitation units includes a reaction gas introduction channel. The invention also discloses a high-throughput PECVD film deposition method, which divides the deposition area located in the same reaction chamber into a plurality of independent deposition micro-areas, and the reaction gas and temperature of each deposition micro-area are independently controllable. The invention can realize the research of dozens or hundreds of process conditions through one experiment, greatly speed up the test efficiency, accelerate the development and screening of new materials and processes; greatly improve the utilization rate of substrate materials and reduce costs; greatly reduce the cost of new materials And the development time and development cost of new technology, accelerate the development process and application of new materials.

Description

High-throughput PECVD apparatus and method

technical field

The invention relates to the technical field of plasma chemical vapor deposition, in particular to a high-throughput PECVD device and method.

Background technique

The current plasma chemical vapor deposition technology (Plasma Enhanced Chemical VaporDeposition, PECVD) generally can only prepare samples of one condition at a time, plus the time required for each sample installation and vacuum acquisition, making the traditional PECVD technology in a variety of The development aspect of the materials process for the combined conditions is very time consuming.

In order to achieve rapid preparation and process screening of new materials, it is necessary to develop a new PECVD preparation device and method, which can achieve deposition of multiple process conditions on a sample without changing the sample, each The thin films deposited under the process conditions do not interfere with each other, so that the process development and material screening of various combination conditions can be completed through one test.

Although the multi-channel PECVD deposition device (US Patent US2012/0301616A1, US2015/0010705A1) developed by Intermolecular Company of the United States through the atmosphere barrier method can realize the preparation of multiple conditions on one sample, its flux is relatively small, and only The deposition of 4 conditions can be realized. For PECVD technology, gas diffusion is an important factor restricting the flux of PECVD technology, which is a problem that needs special consideration in higher flux PECVD devices.

To sum up, the traditional PECVD device can only achieve one process condition in one test, which is very time-consuming for the development of new materials and new processes. The amount is not very high, and the rapid and efficient screening of multi-combination process conditions cannot be satisfied.

Contents of the invention

The purpose of the present invention is to provide a high-throughput PECVD device and method to overcome the deficiencies in the prior art.

To achieve the above object, the present invention provides the following technical solutions:

The embodiment of the present invention discloses a high-throughput PECVD device, including:

reaction chamber;

a deposition platform arranged in the reaction chamber, the deposition surface of the deposition platform is divided into a plurality of independent deposition micro-zones, and the temperature of each of the deposition micro-zones is independently adjustable;

Each of the deposition micro-regions corresponds to a plasma excitation unit, and each of the plasma excitation units includes a reactive gas introduction channel.

Preferably, in the above-mentioned high-throughput PECVD device, the deposition micro-regions are separated through a gas shield.

Preferably, in the above-mentioned high-throughput PECVD device, the vertical displacement of the gas shield is adjustable.

Preferably, in the above-mentioned high-throughput PECVD device, the horizontal and vertical displacements of the deposition table are adjustable; the temperature of the deposition table is adjustable.

Preferably, in the above-mentioned high-throughput PECVD device, the temperature of each of the deposition micro-regions is individually heated and controlled by the plasma excitation unit, or

Controlled by the common heating of the plasma excitation unit and the deposition table.

Preferably, in the above-mentioned high-throughput PECVD device, the plasma excitation unit generates jet microwave plasma on the surface of the deposition micro-domain.

Preferably, in the above-mentioned high-throughput PECVD device, the plasma excitation unit generates ICP plasma on the surface of the deposition micro-region.

Preferably, in the above-mentioned high-throughput PECVD device, the plasma excitation unit generates CCP plasma on the surface of the deposition micro-region.

Preferably, in the above-mentioned high-throughput PECVD device, the size of the deposition micro-region is 3-20 mm.

Correspondingly, the present invention also discloses a high-throughput PECVD film deposition method, which separates the deposition area located in the same reaction chamber into a plurality of independent deposition micro-areas, and the reaction gas and temperature of each deposition micro-area can be independently controlled. control.

Compared with the prior art, the advantages of the present invention at least include:

(1) The research of dozens or hundreds of process conditions can be realized through one experiment, which greatly speeds up the test efficiency and the development and screening of new materials and processes;

(2), greatly improving the utilization rate of substrate materials and reducing costs;

(3) Greatly reduce the development time and cost of new materials and new processes, and accelerate the development process and application of new materials.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments described in the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

Fig. 1 shows the structural representation of the high flux PECVD device in the embodiment of the present invention;

Fig. 2 shows the distribution diagram of deposition micro-region in the specific embodiment 1 of the present invention;

FIG. 3 is a diagram showing the distribution of deposited micro-regions in Example 2 of the present invention.

Detailed ways

As shown in Figure 1 and Figure 2, this embodiment provides a high-throughput PECVD device, including:

reaction chamber 10;

The deposition platform 20 arranged in the reaction chamber 10, the deposition surface 30 of the deposition platform 20 is divided into a plurality of independent deposition micro-regions 31, and the temperature of each of the deposition micro-regions 31 is independently adjustable;

Each of the deposition micro-regions 31 corresponds to a plasma excitation unit 40a or 40b, and each of the plasma excitation units includes a reactive gas introduction channel.

In this technical solution, the surface of the deposition table is divided into multiple deposition micro-zones, and each micro-zone can independently control different temperatures and different gas conditions, so it can meet the rapid and efficient screening of multiple combination process conditions in one experiment .

In this technical solution, a substrate is usually set on the supporting surface of the deposition table 20 as a deposition carrier, and the deposition surface 30 is the surface of the substrate. In common implementations, the deposition surface is the upper surface of the substrate. In one embodiment Among them, the substrate is a molybdenum plate or silicon substrate.

In one embodiment, the deposition platform 20 has an X-Y-Z displacement platform, through which the deposition area can be adjusted vertically, horizontally and horizontally to achieve efficient control and preparation.

As shown in FIG. 2, in one embodiment, the substrate is circular, and a plurality of circular deposition micro-regions are distributed on its surface, and the deposition micro-regions are distributed in an array at equal intervals, wherein each deposition micro-region has a different The grayscale represents different deposition conditions, where the deposition conditions include a combination of deposition temperature and gas conditions.

In this case, the deposition micro-region adopts plasma for thin film deposition, and the plasma used can be jet plasma (such as jet microwave plasma, refer to 40b) and jet inductively coupled plasma (ICP plasma)), or it can be Capacitively coupled plasma with tiny electrodes (CCP plasma, see 40a);

In this case, the heating of the deposition micro-area can be directly heated by jet plasma, or by CCP electrode heating, and can also be realized by co-heating the sample stage and plasma/electrode, and the temperature of the micro-area is higher than that of other areas during co-heating .

In one embodiment, the separation of the deposition area can be realized by the temperature of the deposition area (such as the plasma excitation unit 40a in the figure), and the separation of the deposition area can also be realized by the gas shield 50 (such as the plasma excitation unit in the figure). 40b).

In this case, the deposition reaction atmosphere is controlled by the mass flow meter through programming, so as to correspond to the deposition micro-area.

In one embodiment, the size of the deposited domains can be in the range of 3-20 mm, corresponding to a throughput of 30 to >100 on a 6-inch sample.

It should be noted that Figure 1 of this case is an exemplary illustration. In the same PECVD, the plasma excitation units may all be based on jet microwave plasma, or all be based on ICP plasma, or all be based on CCP plasma. It can also be based on different combinations of the above, which is not limited in this case.

The technical solutions in the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

Example 1:

As shown in FIG. 1, the plasma excitation unit 40a uses CCP plasma technology, the electrode size is φ20mm, the gas is introduced through the pores in the electrode (using the spray electrode design), the distance from the electrode to the sample surface is 3mm, and the electrode heating is used. The method, taking the deposition of amorphous silicon on a silicon substrate to study its passivation effect as an example, through programming, set the combined process of power supply, electrode heating temperature, SiH ₄ /H ₂ flow ratio, deposition pressure, etc., in a 6-inch The research on the process of realizing 30 conditions on the chip, the different gray levels shown in Figure 2 represent different deposition processes, and the corresponding relationship between the deposition process and the position is realized by programming.

Example 2:

As shown in FIG. 1, the plasma excitation unit 40b uses jet microwave plasma technology, the size of the plasma beam is φ5mm, the plasma gas and the reaction gas are all introduced by the microwave plasma device, and a liftable gas shield 50 is set at the same time, with The diversion function reduces the impact on areas other than deposition. The substrate temperature is determined by the heating of the sample stage and the jet microwave plasma heating. Taking the graphene deposition process as an example, the power supply of the microwave plasma is controlled and the sample is heated through programming. Combined process of stage temperature, CH4/H2/Ar flow ratio, deposition pressure, etc., research on the process of achieving >100 conditions on a 6-inch wafer, different colors shown in Figure 3 represent different deposition processes, deposition processes and positions The corresponding relationship is realized through programming.

It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is a relationship between these entities or operations. There is no such actual relationship or order between them. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also includes elements not expressly listed. other elements of or also include elements inherent in such a process, method, article, or device. Without further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article or apparatus comprising said element.

The foregoing is only a specific embodiment of the present invention. It should be pointed out that for those of ordinary skill in the art, some improvements and modifications can also be made without departing from the principle of the present invention. It should be regarded as the protection scope of the present invention.

Claims (10)

1. a kind of high throughput PECVD devices, which is characterized in that including：

Reaction chamber；

It is set to the indoor deposition table of reaction chamber, the deposition surface of deposition table is discrete multiple independent deposition microcells, Mei Gesuo State the temperature Independent adjustable of deposition microcell；

Each deposition microcell is corresponding with a plasma exciatiaon unit respectively, each plasma exciatiaon unit difference Including a reaction gas introduction channel.

2. high throughput PECVD devices according to claim 1, which is characterized in that the deposition microcell passes through shroud of gas Cover carries out discrete.

3. high throughput PECVD devices according to claim 2, which is characterized in that the shroud of gas cover upper and lower displacement can It adjusts.

4. high throughput PECVD devices according to claim 1, which is characterized in that the deposition table is in horizontal and vertical side It is adjustable to displacement；The deposition table temperature is adjustable.

5. high throughput PECVD devices according to claim 4, which is characterized in that the temperature of each deposition microcell is logical The independent computer heating control of plasma exciatiaon unit is crossed, or

Pass through plasma exciatiaon unit and the common computer heating control of deposition table.

6. high throughput PECVD devices according to claim 1, which is characterized in that the excitation of plasma unit is depositing Microcell surface generates jet stream microwave plasma.

7. high throughput PECVD devices according to claim 1, which is characterized in that the excitation of plasma unit is depositing Microcell surface generates ICP plasmas.

8. high throughput PECVD devices according to claim 1, which is characterized in that the excitation of plasma unit is depositing Microcell surface generates CCP plasmas.

9. high throughput PECVD devices according to claim 1, which is characterized in that the size of the deposition microcell 3~ 20mm。

10. a kind of high throughput CVD film deposition method, which is characterized in that discrete by positioned at the deposition region of same reaction chamber At multiple independent deposition microcells, each reaction gas for depositing microcell and temperature are individually controllable.