CN108389951B - A kind of deep ultraviolet LED encapsulation structure and preparation method thereof - Google Patents

Abstract

The present invention provides a deep ultraviolet LED packaging structure and a manufacturing method thereof. The packaging structure includes: a deep ultraviolet LED chip and a bracket with a concave cavity with an opening upward, and the inner bottom wall of the cavity includes a first metal layer attached A coating area and a second coating area of the second metal layer, the first coating area and the second coating area are arranged at intervals and are electrically different, and the deep ultraviolet LED chips are arranged across the first metal layer and the second metal layer between; the anti-reflection layer, the anti-reflection layer is attached to the surface of the deep-ultraviolet LED chip; the light-transmitting insulating layer, the light-transmitting insulating layer is attached to the outer surface of the first metal layer and the second metal layer that is not in contact with the deep-ultraviolet LED chip area; a light-transmitting cover plate, the light-transmitting cover plate covers the opening of the bracket. The deep-ultraviolet LED packaging structure can improve the occurrence of oxidation and corrosion phenomena caused by exposure of metal materials at high temperatures, and improve the total reflection phenomenon caused by the large difference in refractive index of the material interface on the light-emitting surface of the LED chip.

Description

A deep ultraviolet LED packaging structure and manufacturing method thereof

technical field

The invention relates to LED packaging technology, in particular to a deep ultraviolet LED packaging structure and a manufacturing method thereof, belonging to the technical field of semiconductor device manufacturing.

Background technique

Ultraviolet light can usually be divided into: UVA (320-400nm), UVB (280-320nm), UVC (200-280nm) and vacuum ultraviolet VUV (10-200nm) according to the wavelength band.

Ultraviolet light-emitting diodes (UV LEDs) based on III-nitride materials have broad application prospects in the fields of sterilization, polymer curing, biochemical detection, non-line-of-sight communication, and special lighting. Compared with the traditional ultraviolet light source mercury lamp, it has many advantages such as environmental protection, small and portable, low power consumption and low voltage. In recent years, it has received more and more attention and attention.

As we all know, ultraviolet light has a short propagation distance in the air and is easily absorbed by other materials. Therefore, in the packaging of deep ultraviolet LED chips, improper packaging materials or packaging structures should avoid blocking and absorbing ultraviolet light. In particular, it is not possible to seal the bracket and the chip with glue filling like the packaging of conventional blue LED chips, because the glue of organic materials will strongly absorb the ultraviolet light emitted by the chip, resulting in the loss of optical power of the packaged device. The usual method is to fix and weld the deep ultraviolet chip in the bowl of the bracket, provide an optical lens, such as sapphire or quartz lens, and fix it on the top of the dam of the bracket to form a semi-sealed structure. This sealing structure can provide enough mechanical strength to protect the chip, but it cannot block the air from entering the inside, and this structure has obvious optical design flaws, specifically, the ultraviolet light emitted by the inside of the chip will need to pass through The interior of the LED chip-air-optical lens-air is ejected. Compared with the LED chip-glue-air mode under the glue-filling package structure, the light needs to pass through more interfaces, and because the refractive index difference between the materials on both sides of the interface is too large, Especially at the chip-air interface, its refractive index difference will be much larger than that of the chip-glue interface, which will cause most of the light to be fully reflected back into the material and cannot be emitted.

Usually, in view of the needs of current transport, soldering, light reflection and heat dissipation, the surface of the bracket used for LED packaging is usually coated with a metal layer, or metal stacks, such as aluminum, silver, gold, etc., the target chip Being fixed and soldered on it, the metal plating layer provides the electrical connection of the target chip, conducts the heat generated during the operation of the chip, and provides an effective reflection effect to enhance the light output of the packaged device. Compared with InGaN-based blue LEDs whose external quantum efficiency has reached as high as 85%, the current luminous power and photoelectric conversion efficiency of AlGaN-based ultraviolet LEDs are far from satisfactory, which will cause ultraviolet LED chips to generate far More heat than blue LED chips. As for the metal coating, the long-term high temperature state and the irradiation of deep ultraviolet light will seriously affect the performance of the metal coating. For example, the occurrence of oxidation-reduction reaction is aggravated, or the degree of corrosion of metal materials by acidic substances in the air is aggravated, especially metals with active chemical properties such as aluminum and silver. The efficiency index will drop significantly, which greatly shortens the service life of the packaged device. The use of inert metals such as gold and platinum can slow down the cracking of metals, but their reflectivity in the ultraviolet and ultraviolet bands is not ideal, and it is obviously not an ideal material for the reflective layer metal of deep ultraviolet LED brackets.

Contents of the invention

The present invention provides a deep ultraviolet LED packaging structure and its manufacturing method, aiming to improve and solve the serious total reflection phenomenon caused by many material interfaces and large material refractive index differences under the existing packaging structure, and at the same time solve the problem of the exposed metal coating in the packaging bracket. As a result, it is easy to deteriorate at high temperature, and the electrical conductivity, thermal conductivity and reflection performance are reduced, which affects the reliability and life of the packaged device.

The present invention provides a deep ultraviolet LED packaging structure, comprising:

A deep ultraviolet LED chip and a bracket with a concave cavity with an opening upward, the inner bottom wall of the cavity includes a first coating area with N layers of the first metal layer attached and an N layer of the second metal layer attached. The second coating area, the first coating area and the second coating area are arranged at intervals and are electrically different, and the deep ultraviolet LED chip is straddled between the first metal layer and the second metal layer ; N≥1 and is an integer;

An anti-reflection layer, the anti-reflection layer is attached to the surface of the deep ultraviolet LED chip;

A light-transmitting insulating layer, the light-transmitting insulating layer is attached to the outer surface of the first metal layer and the second metal layer in the area that is not in contact with the deep ultraviolet LED chip;

A light-transmitting cover plate, the light-transmitting cover plate covering the opening of the support and forming a closed space with the cavity.

In the deep ultraviolet LED packaging structure described above, the intrinsic refractive index of the antireflection layer is smaller than the refractive index of the substrate material of the deep ultraviolet LED chip.

The above-mentioned deep ultraviolet LED packaging structure, wherein, the material of the anti-reflection layer is selected from one of silicon oxide, silicon nitride, aluminum oxide, titanium oxide, magnesium fluoride, calcium fluoride, lead sulfide, and quartz or more.

The above-mentioned deep ultraviolet LED packaging structure, wherein, the material of the light-transmitting insulating layer is selected from one of silicon oxide, silicon nitride, aluminum oxide, titanium oxide, magnesium fluoride, calcium fluoride, lead sulfide, and quartz. one or more species.

The above-mentioned deep ultraviolet LED packaging structure, wherein, the material of each layer in the first metal layer is selected from one or more of aluminum, silver, gold, copper, tin, lead, and platinum;

The material of each layer in the second metal layer is selected from one or more of aluminum, silver, gold, copper, tin, lead, and platinum.

The package structure of the deep ultraviolet LED as described above, which also includes a Zener diode;

The Zener diode is disposed on the first metal layer and/or the second metal layer.

The above-mentioned deep ultraviolet LED package structure, wherein, the deep ultraviolet LED chip is selected from deep ultraviolet LED chips with a hemispherical array structure on the light emitting surface, deep ultraviolet LED chips with a photonic crystal structure on the light emitting surface, and a deep ultraviolet LED chip with a rough surface on the light emitting surface. It is a kind of deep ultraviolet LED chip with a chemical structure and a deep ultraviolet LED chip with a filter film on the light emitting surface.

The above-mentioned deep ultraviolet LED packaging structure, wherein, the upper surface of the light-transmitting cover plate has M layers of anti-reflection film, and the lower surface of the light-transmitting plate has M layers of anti-reflection film; M≥1 and is an integer.

The present invention also provides a method for manufacturing any one of the above-mentioned deep ultraviolet LED packaging structures, comprising the following steps:

1) Coating N layers of the first metal layer on the first coating area of the inner bottom wall of the stent with an upward concave cavity, and coating N layers of the second metal layer on the second coating area, the first The coating area and the second coating area are arranged at intervals;

2) The ultraviolet LED chip is straddled and welded between the first metal layer and the second metal layer;

3) coating an anti-reflection layer on the surface of the ultraviolet LED chip; coating a light-transmitting insulating layer on the outer surface of the first metal layer and the second metal layer that is not in contact with the deep ultraviolet LED chip; wherein , the material of the anti-reflection layer and the light-transmitting insulating layer are the same;

4) Cover the opening of the bracket with a light-transmitting cover plate.

The present invention also provides a method for manufacturing any one of the above-mentioned deep ultraviolet LED packaging structures, comprising the following steps:

1) Coating N layers of the first metal layer on the first coating area of the inner bottom wall of the stent with an upward concave cavity, and coating N layers of the second metal layer on the second coating area, the first The coating area and the second coating area are arranged at intervals;

2) Coating a light-transmitting insulating layer on the outer surface of the first metal layer and the second metal layer on the area that is not in contact with the deep ultraviolet LED chip;

3) after the surface of the ultraviolet LED chip is coated with an anti-reflection layer, the ultraviolet LED chip is straddled and welded between the first metal layer and the second metal layer;

4) Cover the opening of the bracket with a light-transmitting cover plate.

In the deep ultraviolet LED packaging structure of the present invention, the light-transmitting insulating layer in the outer surface of the first metal layer and the second metal layer that is not in contact with the deep ultraviolet LED chip can effectively avoid the contact of the air with the metal layer on the surface of the bracket, Thus avoiding metal oxidation and corrosion, improving reliability and device life. At the same time, the anti-reflection layer covering the surface of the deep ultraviolet LED chip has a relatively low refractive index, so that the light emitted through the substrate surface of the deep ultraviolet LED chip can effectively transition to the air, avoiding total reflection to a certain extent The occurrence of , increases the light angle and improves the optical power of the device. Therefore, the deep ultraviolet LED packaging structure of the present invention can significantly increase the optical power of the packaged device, and improve the reliability and life index of the device.

Description of drawings

Fig. 1 is a side sectional view of an embodiment of a deep ultraviolet LED packaging structure of the present invention;

Fig. 2 is a top view of an embodiment of the deep ultraviolet LED packaging structure of the present invention;

Fig. 3 is a schematic diagram of the total reflection phenomenon of light in the internal optical path of the LED chip;

FIG. 4 is a schematic diagram of an internal light path of an LED chip with an anti-reflection layer structure P.

Detailed ways

In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention. rather than all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

Figure 1 is a side sectional view of an embodiment of a deep ultraviolet LED packaging structure of the present invention, and Figure 2 is a top view of an embodiment of a deep ultraviolet LED packaging structure of the present invention, as shown in Figure 1-2, the present invention provides a deep ultraviolet LED packaging structure, including:

A deep ultraviolet LED chip 1 and a support 2 with a concave cavity with an opening upward, the inner bottom wall of the cavity includes a first coating area with N layers of the first metal layer a attached and N layers of the second metal layer a In the second coating area of layer b, the first coating area and the second coating area are arranged at intervals and are electrically different, and the deep ultraviolet LED chip 1 is straddled between the first metal layer a and the second metal layer b; N ≥1 and an integer;

The anti-reflection layer c, the anti-reflection layer c is attached to the surface of the deep ultraviolet LED chip 1;

The light-transmitting insulating layer d, the light-transmitting insulating layer d is attached to the outer surface of the first metal layer a and the second metal layer b in the area that is not in contact with the deep ultraviolet LED chip 1;

The light-transmitting cover 3 covers the opening of the bracket 2 and forms a closed space with the cavity.

The bracket 2 is the main body of the packaging structure, and is used to hold the deep ultraviolet LED chip 1 . Wherein, the bracket 2 has a concave cavity with an upward opening, and it is conceivable that the concave cavity is composed of a connected inner bottom wall and an inner side wall. The support material of the present invention can be ceramic materials such as alumina and aluminum nitride, or plastic materials such as PPA. In addition, the opening of the concave cavity can be square or circular, which is not limited too much in the present invention. Specifically, the bracket 2 may be composed of a bottom plate connected with an annular side wall.

The inner bottom wall of the concave cavity can be divided into two areas, namely the first coating area and the second coating area, and the first coating area and the second coating area are arranged at intervals, wherein the first coating area is used for The first metal layer a is coated, and the second coating area is used for coating the second metal layer b. That is to say, the first metal layer a and the second metal layer b are arranged at intervals and are not connected to each other. In addition, the number of layers of the first metal layer a and the second metal layer b may be a single layer or multiple layers. In the present invention, the thickness of the first metal layer a and the second metal layer b is 1-20 μm, and the thickness of the first metal layer a and the second metal layer b can be different or the same.

In the packaging structure of the present invention, the light-emitting surface of the deep ultraviolet LED chip 1 faces upward, and the deep ultraviolet light emitted from the interior of the deep ultraviolet LED chip 1 penetrates the substrate material on the back of the deep ultraviolet LED chip 1 and is emitted. The first metal layer a and the second metal layer b at the bottom are finally ejected. Wherein, the deep ultraviolet LED chip 1 has a flip-chip structure or a vertical structure, and its connection with the first metal layer a and the second metal layer b can be soldered by solder paste or eutectic soldered.

Specifically, as shown in Figures 1-2, the deep ultraviolet LED chip 1 is straddled between the first metal layer a and the second metal layer b, that is, one end of the deep ultraviolet LED chip 1 is in contact with the first metal layer a, The other end of the deep ultraviolet LED chip 1 is in contact with the second metal layer b, wherein the area on the first metal layer a that is in contact with the deep ultraviolet LED chip 1 can be called the first contact area, and the area on the second metal layer b that is in contact with the deep ultraviolet LED chip 1 can be called the first contact area. The area where the LED contacts may be referred to as a second contact area.

The anti-reflection layer c and the light-transmitting insulating layer d are elements used to prevent current conduction, increase the light transmittance of the optical element, and reduce the reflected light of the optical element. Wherein, the anti-reflection layer c is coated on the surface of the deep ultraviolet LED chip 1 (that is, the surface not in contact with the first metal layer a and the second metal layer b) to reduce the reflected light of the deep ultraviolet LED chip 1, and the light-transmitting insulating layer d Coated on the outer surface of the first metal layer a and the second metal layer b not in contact with the deep ultraviolet LED chip 1 (that is, the first contact area and the second contact area are not coated with the light-transmitting insulating layer d) to prevent Corrosion of the first metal layer a and the second metal layer b. That is to say, the deep ultraviolet LED chip 1 can still transfer charges between the first metal layer a and the second metal layer b.

FIG. 3 is a schematic diagram of a light total reflection phenomenon inside an LED chip. Generally speaking, the chip substrate material is sapphire, and its refractive index is between 1.8-1.9. The light emitted from the inside of the chip is emitted through the surface of the substrate material and reaches the air. It is well known that when light is directed from an optically denser medium to an optically rarer medium, the angle of refraction will be greater than the angle of incidence. When the incident angle increases to a certain value (critical angle), the refraction angle will reach 90°, and the outgoing light rays greater than the critical angle will be completely reflected back into the material and cannot be emitted.

Calculate the critical angle according to the formula (C is the critical angle, n ₂ is the refractive index of the optically thinner medium, and n ₁ is the refractive index of the optically denser medium) it can be known that:

When n ₂ is a fixed value, the larger n ₁ is, the smaller the critical angle is, and vice versa. Since the refractive index of the sapphire material is much different from that of air, this results in a smaller critical angle of light, and most of the light will be totally reflected back into the chip at the sapphire-air interface and dissipated as heat. Fig. 4 is a schematic diagram of an internal light path of an LED chip with an anti-reflection layer structure P. In Fig. 4 , the light emitted from the LED chip enters the anti-reflection layer structure P through the surface of the substrate material and then reaches the air. Since the refractive index of the P material of the anti-reflection layer structure is between the substrate material and the air, the critical angle of the substrate material is increased, which reduces the occurrence of total reflection to a certain extent and facilitates more light to be taken out.

Therefore, the arrangement of the anti-reflection layer c in the present invention is helpful for light emission.

At the same time, the light-transmitting insulating layer d can effectively isolate oxygen, water vapor, and carbon dioxide in the air from contact with metal materials, so that the first metal layer a and the second metal layer d will not be oxidized or corroded and deteriorated under the influence of temperature under working conditions .

The light-transmitting cover plate 3 is used to block the opening of the bracket 2 , that is, the opening of the concave cavity, so as to complete the packaging of the deep ultraviolet LED chip 1 .

Glue is applied to the top of the side wall of the concave cavity for adhering the edge portion of the light-transmitting cover 3 , so that the light-transmitting cover 3 is connected with the bracket 2 to form a complete device. The light-transmitting cover plate material is preferably quartz material or sapphire material, which have good light transmittance in the deep ultraviolet wavelength range. In addition, the light-transmitting cover plate 3 can be pre-cut into a predetermined size and shape, or can be cut together after bonding with the bracket 2 and forming.

In the present invention, in order to enable the anti-reflection layer c to reduce the reflection of light in the deep-ultraviolet LED chip 1 , the intrinsic refractive index of the anti-reflection layer c can be made smaller than the refractive index of the substrate material of the deep-ultraviolet LED chip 1 . And under a limited thickness setting, the anti-reflection layer c does not produce significant absorption of ultraviolet light.

Further, the material of the antireflection layer c is selected from one or more of silicon oxide, silicon nitride, aluminum oxide, titanium oxide, magnesium fluoride, calcium fluoride, lead sulfide, and quartz. That is to say, the material of the anti-reflection layer c may be one of the above-mentioned compounds, or a mixture of the above-mentioned multiple compounds.

In addition, the present invention does not make any restrictions on the material of the light-transmitting insulating layer d, as long as it can realize light transmission and prevent the corrosion of the first metal layer a and the second metal layer b, and suppress the corrosion of the first metal layer a and the second metal layer b. Materials with reduced electrical conductivity, thermal conductivity, and reflective properties are sufficient.

Further, the material of the light-transmitting insulating layer d can also be the same as that of the anti-reflection layer c, that is, selected from silicon oxide, silicon nitride, aluminum oxide, titanium oxide, magnesium fluoride, calcium fluoride, lead sulfide, and quartz. one or more of .

That is to say, in the present invention, the antireflection layer c and the light-transmitting insulating layer d may be the same or different.

The antireflection layer c being the same as the light-transmitting insulating layer d means that the material of the anti-reflection layer c is the same as that of the light-transmitting insulating layer d. Specifically, one or more of the above-mentioned materials can be used by vapor phase chemical deposition, electron beam evaporation, magnetron sputtering, etc. to weld the first metal layer a and the deep ultraviolet LED chip 1 at one time. The second metal layer b is attached in the concave cavity. At this time, what is attached to the surface of the deep ultraviolet LED chip 1 is the anti-reflection layer c, and the rest is the light-transmitting insulating layer d.

The difference between the anti-reflection layer c and the light-transmitting insulating layer d means that the material of the anti-reflection layer c is different from that of the light-transmitting insulating layer d. For example, the material of the anti-reflection layer c is A, the material of the light-transmitting insulating layer d is B, and A and B are different. Specifically, before the deep ultraviolet LED chip 1 is not welded in the concave cavity, the first contact area and the second contact area are respectively selected on the first metal layer a and the second metal layer b, and then the first contact area and the second contact area are selected. The second contact area is coated with a transfer material. Then, the material B is used to adhere to the concave cavity through vapor phase chemical deposition, electron beam evaporation, magnetron sputtering, etc. At this time, the entire inner wall of the concave cavity is covered with material B. Then, the transfer material is washed with an inorganic solvent or an organic solvent, and the material B covering the transfer material is also removed, that is, only the light-transmitting insulating layer d is formed. Finally, the deep-ultraviolet LED chip 1 attached with material A by vapor phase chemical deposition, electron beam evaporation, magnetron sputtering, etc. Insulation layer d different packaging structures.

Wherein, the different encapsulation structure of the anti-reflection layer c and the light-transmitting insulating layer d has certain advantages over the same encapsulation structure of the anti-reflection layer c and the light-transmitting insulating layer d.

Specifically, the material of the light-transmitting insulating layer d can be mainly insulating, so that in the subsequent use process, the light-transmitting insulating layer d can ensure that the first metal layer a and the second metal layer b are not irradiated by ultraviolet light and The reduction in reliability caused by oxidation and corrosion in the air also avoids to a certain extent the subsequent adverse effects on the metal layer in the bracket 3 due to processes such as die bonding, baking, and patterning during the encapsulation process of the deep ultraviolet LED chip 1; The anti-reflection layer c can mainly focus on the anti-reflection performance, and in the subsequent use process, the anti-reflection layer c can ensure the transparency of the light source of the deep ultraviolet LED chip 1, reduce its reflected light, and enhance the luminous efficiency.

Moreover, the difference between the anti-reflection layer c and the light-transmitting insulating layer d will also increase the scope of material selection, making their functions more diversified.

Further, the material of each layer in the first metal layer a is selected from one or more of aluminum, silver, gold, copper, tin, lead, and platinum;

The material of each layer in the second metal layer b is selected from one or more of aluminum, silver, gold, copper, tin, lead, and platinum.

That is to say, the material of each layer of the first metal layer a can be one of the above-mentioned ones, or a variety of alloys mentioned above; when N>1, the material of each layer of the first metal layer a can also be different.

The material of each layer of the second metal layer b can be one of the above-mentioned ones, or a plurality of alloys of the above-mentioned ones; when N>1, the materials of each layer of the second metal layer b can also be different.

Meanwhile, the materials of the first metal layer a and the second metal layer b may be the same or different.

In addition, the inner wall of the cavity can also be coated with N layers of third metal layers, and the material of each layer of the third metal layer is selected from one of aluminum, silver, gold, copper, tin, lead, and platinum. or more. Wherein, N≥1.

In addition, the present invention also includes a Zener diode 4 for suppressing the negative effect of electrostatic charges on the deep ultraviolet LED chip 1 and preventing electrostatic breakdown. The Zener diode 4 is arranged on the first metal layer a and/or the second metal layer a. on metal layer b.

Specifically, the Zener diode 4 can be arranged on the first metal layer a, and its positive and negative poles are electrically connected to the outside through wires; the Zener diode 4 can also be arranged on the second metal layer b, and its The positive and negative poles are electrically connected to the outside world through wires; Zener diode 4 can also be straddled on the first metal layer a and the second metal layer b (as shown in Figure 2), and its positive and negative poles are connected to the outside world through wires. electrical connection. Wherein, the Zener diode 4 is connected in parallel with the deep ultraviolet LED chip 1 .

Further, the bottom of the bracket 2 has a first metal pin 5 and a second metal pin 6 .

As shown in FIG. 1 , there are first metal pins 5 and second metal pins 6 at the bottom of the bracket 2 . The first metal pin 5 and the second metal pin 6 mainly provide connections for external circuits. Specifically, the first contact area has a first conductive hole 51 penetrating through the inner bottom wall of the concave cavity, and the second contact area has a second conductive hole 61 penetrating through the inner bottom wall of the concave cavity. By pouring conductive glue into the first conductive hole 51 and the second conductive hole 61 , the electrical connection between the positive and negative electrodes of the deep ultraviolet LED chip 1 and the first metal pin 5 and the second metal pin 6 is completed. In addition, there is a metal heat dissipation area between the first metal pin 5 and the second metal pin 6 .

Further, the deep ultraviolet LED chip 1 in the present invention is selected from deep ultraviolet LED chips with a hemispherical array structure on the light emitting surface, deep ultraviolet LED chips with a photonic crystal structure on the light emitting surface, and deep ultraviolet LED chips with a roughened surface on the light emitting surface. A kind of deep ultraviolet LED chip with filter film on chip and light emitting surface

Among them, the deep ultraviolet LED chip with a hemispherical array structure on the light emitting surface can provide a spherical light output angle, which is conducive to the emission of light at different angles, and the deep ultraviolet LED chip with a filter film structure on the light emitting surface can be used to filter out ultraviolet light. The redundant part in the ultraviolet light spectrum emitted by the chip makes the emitted ultraviolet light wave band more concentrated, so as to enhance or improve the optical performance of the LED chip.

Further, the upper surface of the light-transmitting cover plate has M layers of anti-reflection coatings, and the lower surface of the light-transmitting plate has M layers of anti-reflection coatings; M≥1 and is an integer. The anti-reflection coating on the lower surface and the anti-reflection coating on the upper surface help the upper and/or lower surface of the light-transmitting cover plate 4 to have M layers of anti-reflection coatings or anti-reflection coatings, where M≥1 and is an integer. The light can be emitted from the inside of the transparent cover into the air efficiently.

The present invention also provides a method for manufacturing any one of the above-mentioned ultraviolet LED packaging structures, comprising the following steps:

1) Coating N layers of the first metal layer on the first coating area of the inner bottom wall of the stent with an upward concave cavity, and coating N layers of the second metal layer on the second coating area, the first The coating area and the second coating area are arranged at intervals;

2) The ultraviolet LED chip and Zener diode are straddled and welded between the first metal layer and the second metal layer;

3) coating an anti-reflection layer on the surface of the ultraviolet LED chip; coating a light-transmitting insulating layer on the outer surface of the first metal layer and the second metal layer that is not in contact with the deep ultraviolet LED chip; wherein , the material of the anti-reflection layer and the light-transmitting insulating layer are the same;

4) Cover the opening of the bracket with a light-transmitting cover plate.

Specifically, the bracket in step 1) can be a bracket array, that is, an overall structure composed of several brackets, and each bracket has a first metal pin and a second metal pin attached to the bottom of the bracket.

Step 2) may include: firstly soldering the positive and negative electrodes of the deep ultraviolet LED chip to the first metal layer of each bracket in the bracket array by means of conductive solder paste, conductive silver glue or eutectic welding. On the first contact area and on the second contact area of the second metal layer.

If a Zener diode needs to be provided, the Zener diode chip can also be welded on the first metal layer and/or the second metal layer in a conventional manner in this step.

In step 3), through vapor deposition, magnetron sputtering, thermal evaporation, electron beam evaporation, etc., the concave shape coated with the first metal layer a and the second metal layer b welded with the deep ultraviolet LED chip 1 is one-time. Attaching in the cavity, at this time, what is attached to the surface of the deep ultraviolet LED chip 1 is the anti-reflection layer, and the rest is the light-transmitting insulating layer. At the same time, the target thickness of the anti-reflection layer and the light-transmitting insulating layer can be calculated through the refractive index of the substrate material of the deep ultraviolet LED chip and the luminous wavelength of the deep ultraviolet LED chip.

Before step 4), an antireflection film can be formed on the upper surface of the translucent cover plate by means of vapor deposition (CVD), magnetron sputtering, thermal evaporation, electron beam evaporation, etc., and an antireflection film can be formed on the upper and lower surfaces of the translucent cover plate. Permeable membrane. The anti-reflection film or anti-reflection film can be made of a single material, or a laminate of multiple materials. Then the light-transmitting cover plate is cut according to a predetermined size, so that its size and shape meet the assembly requirements of the bracket.

Specifically, in step 4), the light-transmitting cover plate is bonded to the top of the side wall of each bracket by means of glue bonding or welding. It is conceivable that there must be a gap between the translucent cover plate and the deep ultraviolet LED chip.

Finally, each stent in the stent array is fractured and separated from each other to form the deep ultraviolet LED packaging structure of the present invention.

The above manufacturing method is a manufacturing method of the encapsulation structure in which the anti-reflection layer and the light-transmitting insulating layer are made of the same material.

The following provides a method for manufacturing a packaging structure with different materials for the anti-reflection layer and the light-transmitting insulating layer, including the following steps:

1) Coating N layers of the first metal layer on the first coating area of the inner bottom wall of the stent with an upward concave cavity, and coating N layers of the second metal layer on the second coating area, the first The coating area and the second coating area are arranged at intervals;

2) Coating a light-transmitting insulating layer on the outer surface of the first metal layer and the second metal layer on the area that is not in contact with the deep ultraviolet LED chip;

3) after the surface of the ultraviolet LED chip is coated with an anti-reflection layer, the ultraviolet LED chip is straddled and welded between the first metal layer and the second metal layer;

4) Cover the opening of the bracket with a light-transmitting cover plate.

In step 2), before the deep ultraviolet LED chip is not welded in the concave cavity, the first contact area and the second contact area are respectively selected on the first metal layer and the second metal layer, and then the first contact area and the second contact area are selected. The second contact area is coated with a transfer material. Then, use the material of the light-transmitting insulating layer to adhere to the concave cavity by means of vapor phase chemical deposition, electron beam evaporation, magnetron sputtering, etc. At this time, the entire inner wall of the concave cavity is covered with the material of the light-transmitting insulating layer. Then, the transferable material is washed with an inorganic solvent or an organic solvent, and the material of the light-transmitting insulating layer covering the transferring material is also removed, that is, only the light-transmitting insulating layer is formed.

In step 3), the deep-ultraviolet LED chip to which the material of the anti-reflection layer is adhered by means of vapor phase chemical deposition, electron beam evaporation, magnetron sputtering, etc. is welded on the first contact area and the second contact area.

Thus, different encapsulation structures of the anti-reflection layer and the light-transmitting insulating layer are generated.

Wherein, step 1) and step 4) are consistent with step 1) and step 4) of the manufacturing method of the encapsulation structure in which the antireflection layer and the light-transmitting insulating layer are made of the same material.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (9)

1. A deep ultraviolet LED packaging structure, characterized in that, comprising: A deep ultraviolet LED chip and a bracket with a concave cavity with an opening upward, the inner bottom wall of the cavity includes a first coating area with N layers of the first metal layer attached and an N layer of the second metal layer attached. The second coating area, the first coating area and the second coating area are arranged at intervals and are electrically different, and the deep ultraviolet LED chip is straddled between the first metal layer and the second metal layer ; N≥1 and is an integer; An anti-reflection layer, the anti-reflection layer is attached to the surface of the deep ultraviolet LED chip; A light-transmitting insulating layer, the light-transmitting insulating layer is attached to the outer surface of the first metal layer and the second metal layer in the area that is not in contact with the deep ultraviolet LED chip; a light-transmitting cover plate, the light-transmitting cover plate covers the opening of the bracket and forms a closed space with the cavity; The upper surface of the light-transmitting cover has M layers of anti-reflection coatings, and the lower surface of the light-transmitting cover has M layers of anti-reflection films; M≥1 and is an integer. 2. The package structure of deep ultraviolet LED according to claim 1, characterized in that, the intrinsic refractive index of the antireflection layer is smaller than the refractive index of the substrate material of the deep ultraviolet LED chip. 3. The deep ultraviolet LED packaging structure according to claim 2, wherein the material of the antireflection layer is selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, titanium oxide, magnesium fluoride, calcium fluoride, sulfurized One or more of lead and quartz. 4. The deep ultraviolet LED packaging structure according to any one of claims 1 to 3, wherein the material of the light-transmitting insulating layer is selected from silicon oxide, silicon nitride, aluminum oxide, titanium oxide, magnesium fluoride, One or more of calcium fluoride, lead sulfide, and quartz. 5. The deep ultraviolet LED packaging structure according to claim 1, wherein the material of each layer in the first metal layer is selected from one of aluminum, silver, gold, copper, tin, lead, and platinum. one or more kinds; The material of each layer in the second metal layer is selected from one or more of aluminum, silver, gold, copper, tin, lead, and platinum. 6. The deep ultraviolet LED packaging structure according to claim 4, further comprising a Zener diode; The Zener diode is disposed on the first metal layer and/or the second metal layer. 7. The deep ultraviolet LED packaging structure according to claim 1, wherein the deep ultraviolet LED chip is selected from deep ultraviolet LED chips with a hemispherical array structure on the light emitting surface, and deep ultraviolet LED chips with a photonic crystal structure on the light emitting surface. A chip, a deep ultraviolet LED chip with a surface roughened structure on the light emitting surface, and a deep ultraviolet LED chip with a filter film on the light emitting surface. 8. A method for manufacturing the deep ultraviolet LED packaging structure described in any one of claims 1-7, characterized in that, comprising the steps of: 1) Coating N layers of the first metal layer on the first coating area of the inner bottom wall of the stent with an upward concave cavity, and coating N layers of the second metal layer on the second coating area, the first The coating area and the second coating area are arranged at intervals; 2) The ultraviolet LED chip is straddled and welded between the first metal layer and the second metal layer; 3) coating an anti-reflection layer on the surface of the ultraviolet LED chip; coating a light-transmitting insulating layer on the outer surface of the first metal layer and the second metal layer that is not in contact with the deep ultraviolet LED chip; wherein , the material of the anti-reflection layer and the light-transmitting insulating layer are the same; 4) covering the opening of the bracket with a light-transmitting cover plate; Before the step 4), an anti-reflection film is formed on the upper surface of the light-transmitting cover plate, and an anti-reflection film is formed on the lower surface of the light-transmitting cover plate. 9. A method for manufacturing the deep ultraviolet LED packaging structure described in any one of claims 1-7, characterized in that, comprising the steps of: 1) Coating N layers of the first metal layer on the first coating area of the inner bottom wall of the stent with an upward concave cavity, and coating N layers of the second metal layer on the second coating area, the first The coating area and the second coating area are arranged at intervals; 2) Coating a light-transmitting insulating layer on the outer surface of the first metal layer and the second metal layer on the area that is not in contact with the deep ultraviolet LED chip; 3) after the surface of the ultraviolet LED chip is coated with an anti-reflection layer, the ultraviolet LED chip is straddled and welded between the first metal layer and the second metal layer; 4) covering the opening of the bracket with a light-transmitting cover plate; Before the step 4), an anti-reflection film is formed on the upper surface of the light-transmitting cover plate, and an anti-reflection film is formed on the lower surface of the light-transmitting cover plate.