CN108367556A - Metal layer is laminated transparent conducting film and uses its touch sensor - Google Patents
Metal layer is laminated transparent conducting film and uses its touch sensor Download PDFInfo
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- CN108367556A CN108367556A CN201680072184.XA CN201680072184A CN108367556A CN 108367556 A CN108367556 A CN 108367556A CN 201680072184 A CN201680072184 A CN 201680072184A CN 108367556 A CN108367556 A CN 108367556A
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- metal layer
- transparent
- film
- conductive film
- transparent conductive
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/412—Transparent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/208—Touch screens
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Laminated Bodies (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Even if the present invention provides a kind of in the case where forming the metal wiring layer of graph thinning, it is not easy to generate the metal layer stacking transparent conducting film of wiring trouble because of electrically conducting transparent film stripping and uses its touch sensor.The metal layer stacking transparent conducting film of the present invention is that transparent conducting film is laminated in the metal layer in at least one side side of transparent base (1) successively with resin layer (2), transparent conductive film (3), metal layer (4), wherein, aforementioned resin layer includes 15~55 parts by weight of inorganic oxide particles relative to 100 parts by weight of resin, and aforementioned transparent conductive film includes indium system complex oxide.
Description
Technical field
The present invention relates to the metals that resin layer, transparent conductive film, metal layer are formed in at least one side of transparent base
Layer stackup transparent conducting film and its touch sensor is used, is the particularly useful skill of narrow frameization to display equipment etc.
Art.
Background technology
It is set in the displays such as the flat-panel monitors such as liquid crystal display, plasma display, organic el display or touch panel
In standby, the transparent electrode of indium tin composite oxides (ITO) etc. has been used.In order to provide voltage or detection transparent electrode from outside
On current potential, be connected with pattern wiring in the transparent electrode.As pattern wiring, it is widely used through formation such as silk screen print methods
The wiring of silver paste agent.In general, in the display device, figure is carried out to wiring in a manner of the peripheral portion around transparent electrode
Case is formed.Also, by using the base material etc. decorated, in a manner of the wiring not visible from outside assembling display sets
It is standby.
There is the tendency complicated in the high-definition with display equipment and multifunction, the pattern around wiring.For example,
As touch panel, touch panel, the matrix type resistance of the projection type capacitive way of Random seismic field (multi-point touch) can be carried out
The touch panel of film mode becomes remarkable focus in recent years.In the touch panel of these modes, transparent conductivity is thin
Film is patterned as regulation shape (such as strip) and forms transparent electrode, the shape between the control units such as each transparent electrode and IC
At pattern wiring.In this way, the pattern of wiring complicates, on the other hand, in order not to can be appreciated that the region for surrounding wiring, also require to make
The peripheral portion decorated is narrower, improves the area ratio (narrow frame) for showing the display area in equipment.But it is printing
In the method for brushing aforementioned silver paste agent, so that the line width of electrode is reduced and there is limitation, display equipment is carried out therefore, it is difficult to further narrow
Frame.
In order to further carry out narrow frame to display equipment, need to make pattern wiring graph thinning, and in order to inhibit cloth
The resistance of line increases, and needs using the high wiring material of electric conductivity.Consider from this viewpoint, it is proposed that following method：It is produced on
The laminated body for forming transparent conducting film on base material, being formed on the metal layer being made of copper passes sequentially through etching and selects
Selecting property removes metal layer, transparent conducting film, to be patterned (Patent Documents 1 to 2).
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Application 63-113585 bulletins
Patent document 2：Japanese Unexamined Patent Publication 2011-060146 bulletins
Invention content
Problems to be solved by the invention
It has however been found that in Patent Documents 1 to 2, if continuing the graph thinning of propulsion pattern wiring, electrically conducting transparent will produce
The problem of layer etc. is removed from film substrate.
Therefore, it even if the object of the present invention is to provide in the case where forming the metal wiring layer of graph thinning, is not easy to
The metal layer stacking transparent conducting film of wiring trouble is generated because of the stripping of transparent conductive film and uses its touch sensing
Device.
The solution to the problem
The inventors of the present invention inquire into great concentration to solve aforementioned problems, as a result, it has been found that, it may be implemented by using following compositions
Above-mentioned purpose, so as to complete the present invention.
That is, the metal layer stacking transparent conducting film of the present invention is characterized in that, it is at least one side in transparent base
Side successively with resin layer, transparent conductive film, metal layer metal layer be laminated transparent conducting film, aforementioned resin layer relative to
100 parts by weight of resin include 15~55 parts by weight of inorganic oxide particles, and aforementioned transparent conductive film includes indium system complex oxide.
It should be noted that the various physics values in the present invention are the values measured by the method employed in embodiment.
By making aforementioned resin layer include the inorganic oxide particles of the content of prescribed limit, can provide even if being formed
In the case of the metal wiring layer of graph thinning, it is not easy to generate the metal layer stacking of wiring trouble because of the stripping of transparent conductive film
Transparent conducting film.Although its mechanism there is no final conclusion, but be believed that as described below.Resin is stacked gradually over the transparent substrate
In the case of layer, transparent conductive film, metal layer, due to the difference of the hot property of organic matter and inorganic matter etc., resin layer and transparent
The interface of conductive film becomes the most weak part of closing force, and transparent conductive film is peeling-off.The stripping is layer on nesa coating
The phenomenon that being generated when being laminated with metal layer does not find in the case of non-laminated metal layer.Speculate due to being answered from metal layer generation
Power, therefore the interface of closing force part, that is, resin layer and transparent conductive film the most fragile is peeling-off.Therefore, it is set to improve
The closing force at the interface of lipid layer and transparent conductive film is implemented and is adjusted to the content of the inorganic oxide particles in resin layer
Research, as a result, it has been found that, by the inorganic oxide particles of the content comprising aforementioned range, will produce advantageous effect.That is, can
To think, by saturating when there are the inorganic particle of specified amount, improving laminated metal layer in the transparent conductive film side of resin layer
The closing force of bright conductive film/resin layer, by optimizing the content of the inorganic particle, interface closing force is optimized, and can be inhibited
The generation of wiring trouble (wiring peeling etc.).The arithmetical average surface of the one side of the formation transparent conductive film of resin layer can be passed through
Phasic property of rugosity, material etc. etc. improves the closing force at interface.
Indium system complex oxide in the present invention is preferably indium tin composite oxides.By keeping transparent conductive film multiple for indium tin
Oxide is closed, the crystallization based on heat treatment of transparent conductive film is easy, and can form transparent higher and with good conductivity
Transparent conductive film, and the closing force with resin layer can be improved, wiring trouble (wiring peeling etc.) can be prevented.
Inorganic oxide particles in the present invention are preferably silica dioxide granule.Thus, it is possible to which it is aobvious to control touch panel etc.
Show the reflecting properties in equipment, and the adaptation with transparent conductive film can be further increased, states function and effect in realization
Aspect is advantageous.
The one side of the aforementioned transparent conductive film side of resin layer in the present invention is measured by X-ray photoelectron spectroscopic analysis method
The surface-element ratio (atom %) of Si be preferably 0.1 atoms of atom %~11 %.Think the surface-element ratio and layer of Si
The closing force of transparent conductive film/resin layer when folded metal layer is related, can be with if Si is the surface-element ratio within the scope of this
The closing force at the interface of resin layer and transparent conductive film is further increased, is advantageous in terms of stating function and effect in realization.
The arithmetical average surface rugosity Ra of the one side of the aforementioned transparent conductive film side of resin layer in the present invention is preferably 1nm
Below.By making arithmetical average surface rugosity Ra in the range, the boundary of resin layer and transparent conductive film can be further increased
The closing force in face is advantageous in terms of stating function and effect in realization.
The average grain diameter of inorganic oxide particles in the present invention is preferably 10nm~60nm.It as a result, will not be to touch surface
Plate etc. shows that the identification of equipment has an impact, and can improve the closing force at the interface of resin layer and transparent conductive film, can
To prevent the stripping because of transparent conductive film from generating wiring trouble.
Metal layer in the present invention is preferably the laminated body of layers of copper, copper alloy layer or layers of copper and copper alloy layer.By using
The high metal of electric conductivity as described above can inhibit resistance to rise and realize the graph thinning of pattern wiring, can make
Show the narrow frames such as equipment.
Metal layer in the present invention preferably has a drafting department, and the most narrow part of the width of metal layer is 50 μm or less.It is logical
The graph thinning of pattern wiring is crossed, the narrow frames such as display equipment can be made.
The thickness of metal layer in the present invention is preferably 100nm~200nm.Thus, it is possible to operation effect when improving etching
Rate, and even if in the case where forming the metal layer of graph thinning, be also possible to prevent to generate wiring because of the stripping of transparent conductive film
Failure.
It is preferable to use aforementioned metal layer stackup transparent conducting films for the touch sensor of the present invention.According to aforementioned metal layer
Even if laminating transparent conductive membrane is also possible to prevent in the case where forming the metal layer of graph thinning because of transparent conductive film
Stripping generates wiring trouble.
Description of the drawings
Fig. 1 is the schematic cross-section of the metal layer stacking transparent conducting film in an embodiment of the invention.
Fig. 2 is the schematic cross-section of the metal layer stacking transparent conducting film in other embodiments of the present invention.
Fig. 3 is the schematic cross-section of the metal layer stacking transparent conducting film in other embodiments of the present invention.
Specific implementation mode
In the following, refer to the attached drawing, the embodiment for the metal layer of the present invention being laminated transparent conducting film illustrates.Its
In, in part or all of figure, the unwanted part for explanation is omitted, additionally, there are for convenience of description into
The part for zooming in or out and illustrating is gone.The term of upper inferior expression position relationship is used merely to facilitate explanation, it is not intended that limit
The composition of the fixed present invention.
<Transparent conducting film is laminated in metal layer>
Fig. 1 be one embodiment of the present invention in metal layer be laminated transparent conducting film schematic cross-section, Fig. 2~
3 the schematic cross-section of transparent conducting film is laminated for the metal layer in other embodiments of the present invention.Metal shown in FIG. 1
Layer stackup transparent conducting film includes transparent base 1, resin layer 2, transparent conductive film 3, metal layer 4 successively.As shown in Fig. 2,
Two layers of transparent conductive film (the first transparent conductive film 31 and the second transparent conductive film 32) can also be laminated in transparent conductive film 3, but
It can be only with layer of transparent conductive film or with three layers or more of transparent conductive film.As shown in figure 3, can be in transparent base 1
Surface have hard conating 5.Hard conating 5 can be formed in the single or double of transparent base 1.In addition, metal layer 4 can be at it
Upper setting second metal layer.It should be noted that in Fig. 1~3, shows and be only formed with resin layer on one side in transparent base 1
2, transparent conductive film 3 and the form of metal layer 4, but resin layer 2, transparent conductive film 3 can also be formed on the two sides of transparent base 1
And metal layer 4.
(transparent base)
As transparent base, as long as being the material transparent in visible light region, it is not particularly limited, glass can be used
Glass, the various plastic films with the transparency.In the transparent electricity that metal layer stacking transparent conducting film is used for touch panel
In the case of pole, flexible display etc., as transparent base, it is preferable to use the flexible thin films such as plastic film.
As the material of plastic film, can enumerate：Polyester resin, acetate esters resin, polyether sulfone resin, poly- carbon
Acid esters resinoid, polyamide-based resin, polyimide based resin, polyolefin resin, cyclenes hydrocarbon resins, (methyl) acrylic acid
Resinoid, polyvinyl chloride resin, polyvinylidene chloride resinoid, polystyrene resins, polyvinyl alcohol resin, polyarylate
Resinoid, polyphenylene sulfide resinoid etc..Wherein, particularly preferred to enumerate：Polyester resin, gathers polycarbonate resin
Olefine kind resin etc..
For transparent base, sputtering, corona discharge, flame, ultraviolet light irradiation, electron beam photograph can be implemented in advance to surface
Penetrate, chemical conversion, the etching processes such as oxidation, primary coat processing, to improve and be formed the close of transparent conductive film over the transparent substrate
Conjunction property.In addition, before forming transparent conductive film, it as needed, can also be by solvent cleaning, ultrasonic cleaning etc., to saturating
Bright substrate surface is dusted, is purifying.
In the case where using plastic film as transparent base, thickness is more excellent preferably in the range of 2~200 μm
It is selected in the range of 10~100 μm.It, can be into being about to film shape if in the range, the mechanical strength of transparent base is abundant
At web-like to be formed continuously the operation of transparent conductive film etc..
Furthermore it is possible to form dielectric layer, hard conating etc. in the transparent conductive film forming face of transparent base.In transparent base
The one side that opposite side is in transparent conductive film forming face of material, can be arranged as required to hard conating, adhesive layer, resist blocking and that
Layer etc..Alternatively, it is also possible to use the bonding way appropriate such as adhesive to be fitted with other base materials, for being bonded with other base materials
Adhesive phase etc. upper interim paste the protective layers such as diaphragm.
(hard conating)
Hard conating can be formed in the two-sided or single side of transparent base.Although as a result, including polyester resin, polyolefins
The transparent base of resin, polycarbonate resin etc. itself, which exists, is very easy to abrasive tendency, but can form transparent lead
Transparent base is prevented to be damaged in electrolemma, each process for patterning or being equipped on electronic equipment etc..
For the forming material of hard conating, can have without particular limitation used as the envelope after formation hard conating
Abundant intensity and the material for having the transparency.As used resin, can enumerate：Thermohardening type resin, thermoplastic resin,
Ultraviolet curing resin, electronic beam solidified resin, two-component hybrid resin etc., wherein preferably ultraviolet by irradiating
When line carries out curing process, the ultraviolet curing resin of hard conating can be effectively formed by simple process operation.
As ultraviolet curing resin, can enumerate：Polyester resin, acrylic resin, carbamates tree
The various resins such as fat, amide resinoid, organic silicon resin, epoxylite, including ultraviolet hardening monomer, oligomer,
Polymer etc..As it is preferable to use ultraviolet curing resin, preferably acrylic resin and epoxylite, more preferably
Acrylic resin.
As needed, various additives can be added into hard conating.As such additive, can enumerate：Particle,
The typical additives such as antistatic agent, plasticizer, surfactant, antioxidant and ultra-violet absorber.
Hard conating can obtain by the following method：Coating adds comprising each gel-type resin and as needed over the transparent substrate
The resin combination of the crosslinking agent, initiator, the sensitizer that add etc. carries out solvent in the case where resin combination includes solvent
It is dry, its solidification is made by any one of application heat, active energy beam or both.As heat, air circulation can be used
The known manners such as formula baking oven or IR heaters, but it is not limited to these methods.As the example of active energy beam, have ultraviolet
Line, electron beam, gamma ray etc., are not particularly limited.
The thickness of hard conating is not coated with restriction, preferably 0.5 μm~5 μm, more preferably 0.7 μm~3 μm, most preferably
0.8 μm~2 μm.If the thickness of hard conating in aforementioned range, can inhibit the low molecular weight compositions such as oligomer thin from plastics
Film is precipitated, and can prevent the identification of touch panel etc. from deteriorating, and can prevent crackle, warpage.
(resin layer)
In order to control the adaptation of reflection characteristic, raising and transparent conductive film etc., resin layer is preferably provided at transparent base
On.Especially from the viewpoint of issuable appearance disadvantage in each process, the setting of preferred resin layer is being formed in transparent base
On hard conating on material.In addition, resin layer can also be arranged on optical adjustment layer, priming coat etc..Resin layer wraps in resin
Containing inorganic oxide particles.
As the resin for including in resin layer, can enumerate：Acrylic resin, ammonia of the refractive index for 1.4~1.6 or so
Carbamate resinoid, melamine resinoid, alkyd based resin, siloxane type polymers, organosilan condensation product etc., preferably
Include the ultraviolet curing resin of acrylic resin.
From improve with the adaptation of transparent conductive film etc., prevent stripping from the viewpoint of, resin layer preferably has inorganic oxygen
Compound particle.As the inorganic oxide for forming inorganic oxide particles, for example, can enumerate：Silica (silica
Grain) particle, hollow nanometer silicon dioxide particle, titan oxide particles, alumina particle, Zinc oxide particles, granules of stannic oxide, oxidation
Zirconium particle etc..Wherein, preferably silica (silica dioxide granule) particle, titan oxide particles, alumina particle, Zinc oxide particles,
Granules of stannic oxide, zirconia particles.These can be used alone, can also and with two or more.
From improve with the adaptation of transparent conductive film etc., prevent stripping from the viewpoint of, relative to 100 parts by weight of resin,
The content of inorganic oxide particles is preferably the parts by weight of 15 parts by weight~55, the parts by weight of more preferably 17 parts by weight~50, into one
Step is preferably the parts by weight of 20 parts by weight~45.
The range of the preferred 10nm~60nm of average grain diameter of inorganic oxide particles, the range of more preferable 15nm~35nm.
It should be noted that " average grain diameter " refers to the average grain diameter (D of the size distribution based on dimension criteria50), spread out by using light
Penetrate/scattering method is measured solution made of making particle be dispersed in water and acquires.
Resin layer can contain other inorganic matters.As inorganic matter, can enumerate：NaF(1.3)、Na3AlF6(1.35)、
LiF(1.36)、MgF2(1.38)、CaF2(1.4)、BaF2(1.3)、BaF2(1.3)、LaF3(1.55), (bracket such as CeF (1.63)
Interior numerical value indicates refractive index).
Resin layer can be formed a film using above-mentioned material by wet coating (rubbing method) etc..For example, being formed containing oxidation
It, can also if the smooth surface of the resin layer as basal layer in the case that the indium oxide (ITO) of tin is used as transparent conductive film
Shorten the crystallization time of transparency conducting layer.Consider from the viewpoint, resin layer is preferably formed a film by wet coating.
The thickness of resin layer is 10nm or more and 100nm or less, but preferably 20nm or more and 50nm or less.By making
The thickness of resin layer is in aforementioned range, it can be ensured that the transparency, and identification can be improved.
For the surface element for the Si that the one side of the formation transparent conductive film of resin layer is measured by X-ray photoelectron spectroscopy
Plain ratio, the preferably 0.1 atom % of atom %~11, the more preferably 0.2 atom % of atom %~10.5, further preferably
0.3 atoms of atom %~10.0 %.It is generally believed that the surface-element ratio of Si and transparent conductive film/tree when laminated metal layer
The closing force of lipid layer is related, if in aforementioned range, can improve with the adaptation of transparent conductive film etc., prevent from removing.
The arithmetical average surface rugosity Ra of the one side of the formation transparent conductive film of resin layer is preferably 1nm hereinafter, more preferably
For 0.8nm or less.If in aforementioned range, can improve with the adaptation of transparent conductive film etc., prevent from removing.
(transparent conductive film)
Transparent conductive film is with the electroconductive oxide of metal film as main component or to contain main metal and one
Kind or more foreign metal metal composite oxide film as main component.As long as these conductive membranes are transparent and have
The film of electric conductivity, constituent material be not particularly limited, it is preferable to use be selected from by Sc, Y, Si, Zr, Hf, V, Nb,
Ta、Cr、Mo、W、Mn、Tc、Re、Fe、Ru、Os、Co、Rh、Ir、Ni、Pd、Pt、Cu、Ag、Au、Zn、Cd、Mg、Al、Ga、Ti、Ge、
A kind of metal metal oxide as main component in the group of In, Sn, Pb, As, Sb, Bi, Se, Te, I composition.It is led from transparent
From the viewpoint of the transparency of electrolemma, electric conductivity, main metallic element is preferably any one of In, Zn, Sn, and most preferably indium system is multiple
Close oxide.In the case where transparent conductive film is the metal composite oxide containing main metal and foreign metal, as impurity
Metal, it also may be preferable for using selected from one or more of above-mentioned group of metal.
In the carrier density for improving transparent conductive film, resistance this viewpoint for reducing transparent conductive film, composition metal
Metal of the foreign metal it is preferable to use valence electron number more than main metal in oxide.As such metal composite oxide,
It can enumerate：Indium tin composite oxides (ITO), antimony-doped tin oxide (ATO), aluminium-doped zinc oxide (AZO), Ga-doped zinc oxide
(GZO), indium doping zinc oxide (IZO) etc..Wherein, in the viewpoint of transparent conductive film for forming low resistance and high transparency, most
It is preferable to use indium tin composite oxides.Indium tin composite oxides as described above have following feature：In visible light region
(380nm~780nm) transmissivity is high, and the sheet resistance value of unit area is low.
The forming method of transparent conductive film is not particularly limited, and conventionally known method may be used.Specifically, example
Such as, it may be exemplified out：Vacuum vapour deposition, sputtering method, ion plating method.It is appropriate alternatively, it is also possible to be used according to required film thickness
Method.
Each transparent conductive film can be crystalline, can also noncrystalline.For example, use plastic film as transparent base
Material, and formed in the case that ito film be used as transparent conductive film by sputtering method, it is generated because of the heat resistance of base material due to presence
It restricts, therefore spatter film forming cannot be carried out at high temperature.Therefore, the transparent conductive film just after film forming is mostly that amorphous film (is also deposited
The case where a part crystallizes).These amorphous transparent conductive film transmissivities compared with the film of crystalline are low, produce sometimes
The problems such as resistance variations after raw humidification heat run are larger.From the viewpoint consider, can be temporarily forming it is amorphous transparent
After conductive film, is heated in the presence of oxygen in an atmosphere by it is made to be converted to crystalline film.By making transparent conductive film
Crystallization can bring transparency raising, realize low resistance and humidify that the resistance variations after heat run are small, and humidification is thermally relieved
Property improve the advantages that.
The crystallization of each transparent conductive film can be on transparent base after formation amorphous film, before so that metal layer is formed a film
It carries out, can also be crystallized after making metal layer film forming.In addition, carrying out figure to transparent and electrically conductive film by etching etc.
In the case of case, the crystallization of transparent conductive film can be carried out before etching and processing, can also be carried out after etching and processing.
The sheet resistance value of indium tin system complex oxide layer is preferably 300 Ω/ hereinafter, further preferably 270 Ω/
□.The small transparent conducting film of this sheet resistance value for example can be by using sputtering or vacuum evaporation in solidified resin
It is formed on layer after the uncrystalline layer of indium tin system complex oxide, is heated 30~90 minutes or so at 120 DEG C~200 DEG C
Uncrystalline layer is set to be converted to crystalline layer, to obtain.It as the mode for making it convert, is not particularly limited, sky can be used
Gas circulating baking oven or IR heaters etc..
About the definition of " crystalline ", it will be formed with the transparent conducting film of transparent conductive film over the transparent substrate 20
DEG C, impregnate 15 minutes in the hydrochloric acid of 5 weight % of concentration, then wash and dry, electricity between the terminal between 15mm measured with tester
Resistance, in the case that resistance is no more than 10k Ω between terminal, it is believed that conversion end of the ito film to crystalline.
Transparent conductive film is preferably at least the film for being formed with layer of transparent conductive film, and two layers of electrically conducting transparent can also be laminated
Film.Alternatively, it is also possible to two layers or more of transparent conductive film.In the case where forming layer of transparent conductive film, In2O3Weight
Measure % preferably 99.5 weight of weight %~80 %, SnO2Weight % preferably 0.5 weight of weight %~20 %.It is being laminated two layers thoroughly
Bright conductive film is come in the case of forming transparent conductive film, the In close in the first transparent conductive film of metal layer side2O3Weight
Measure % preferably 99.5 weight of weight %~90 %, the more preferable 99 weight weight of %~92 %, further preferred 98 weight %~95
Weight %.SnO2Weight % preferably 0.5 weight of weight %~10 %, the more preferable 1 weight weight of %~8 %, further preferred 2
The weight of weight %~5 %.In close in the second transparent conductive film of resin layer side2O3Weight % preferably 95 weight %~
80 weight %, the more preferable 93 weight weight of %~85 %, the further preferred 92 weight weight of %~87 %.SnO2Weight % it is excellent
Select 5 weight of weight %~20 %, the more preferable 7 weight weight of %~15 %, the further preferred 8 weight weight of %~13 %.From subtracting
From the viewpoint of the resistivity of small transparent conductive film, preferably make the foreign metal SnO of the first transparent conductive film2Content be less than the
The foreign metal SnO of two transparent conductive films2Content.
By the foreign metal SnO for reducing by the first transparent conductive film2Content come inhibit etching removal metal layer when electricity
The reason of resistance increases is still not clear.As one of supposition reason, it is considered that, in the case where the content of foreign metal is larger,
Due to the complexing etc. of chemical species and foreign metal in the etchant for removing metal layer, the current-carrying of transparent conducting film
There is the tendency reduced in sub- density, by reducing the content of foreign metal, resistance caused by this influence as etchant increases
It is inhibited.
When forming layer of transparent conductive film, the thickness of transparent conductive film is preferably 10~35nm.Two layers of electrically conducting transparent is laminated
Film and when forming transparent conductive film, the thickness of the first transparent conductive film is preferably 1nm~10nm, more preferably 2nm~9nm, into
One step is preferably 3nm~8nm.The thickness of second transparent conductive film is preferably 9nm~35nm, more preferably 12~30nm, into one
Step is preferably 15~25nm.From the viewpoint of the resistivity for reducing transparent conductive film, preferably with the thickness of the first transparent conductive film
Degree forms transparent conductive film less than the mode of the thickness of the second transparent conductive film.From make transparent conductive film be high-transmission rate viewpoint
It sets out, the thickness of transparent conductive film entirety is preferably 35nm hereinafter, preferably 30nm or less.
(protective film)
It, can be on nesa coating by aftermentioned adhesive phase from the viewpoint of the fracture for preventing transparent conductive film
Protective film is laminated and transparent conductive laminate is made.Protective film includes polyester resin.By being arranged on the two sides of transparent base
Above-mentioned hard conating becomes harder and is easy cracking although transparent substrate itself is difficult to be damaged.In addition, in thin transparent
In the case that film base material is strip, such as in the formation process of transparent conductive film, the patterning process of transparent conductive film, deposit
The problem of fracture being easy tod produce when film is moved in transparent film substrate.From the viewpoint of improving mechanical strength, constitute
The polyester resin film of protective film preferably carries out being uniaxially stretched the stretch processings such as processing, biaxial stretch-formed processing.From mechanical strength, heat-resisting
Property improve from the perspective of, particularly preferably carry out biaxial stretch-formed processing.As polyester resin, poly terephthalic acid can be enumerated
Glycol ester resin and polyethylene naphthalate resin, pet resin is in mechanical property, optics
Characteristic is preferred in terms of obtaining easiness.
The thickness of protective film is 120 μm~250 μm, but more preferably 140 μm~220 μm, further preferably
145 μm~190 μm.If it is the range, the generation of curling can be prevented, and can be improved when film roll is taken as web-like
Operating efficiency etc..
(adhesive phase)
As the forming material of adhesive phase, as long as the material with the transparency can make without particular limitation
With preferably acrylic adhesives, epoxy adhesive, silicone adhesive category, more preferably acrylic adhesives.Shape
At the dry thickness of adhesive phase can suitably be adjusted, usually 1~40 μm or so, preferably 3~35 μm, further
Preferably 5~30 μm.
(metal layer)
Metal layer is formed on nesa coating.It should be noted that from the gold for improving adaptation, preventing from constituting metal layer
Belong to element to from the point of view of the viewpoints such as the diffusion of transparent conductive film, between the first transparent conductive film and metal layer, example can also be set
If thickness is 5nm films below.On the other hand, for inhibiting in transparent conductive film when etching removes metal layer
For the increased viewpoint of sheet resistance, preferably metal layer is directly formed in the first transparent conductive film.
The constituent material of metal layer is not particularly limited as long as conductive material, such as can properly use
The metals such as Ti, Si, Nb, In, Zn, Sn, Au, Ag, Cu, Al, Co, Cr, Ni, Pb, Pd, Pt, W, Zr, Ta, Hf.Alternatively, it is also possible to
Properly use the material of more than two kinds for containing these metals, using these metals as alloy of principal component etc..Pass through etching etc.
The part in face to remove metal layer and when forming pattern wiring, as the material of metal layer, can properly use Au,
The high metal of the electric conductivity such as Ag, Cu.Wherein, since electric conductivity is high and is cheap material, preferred layers of copper, copper alloy layer or
The laminated body of layers of copper and copper alloy layer.
From the viewpoint of the uniformity of film thickness, film forming efficiency, metal layer preferably by chemical vapour deposition technique (CVD),
The vacuum film formations such as physical vaporous deposition (PVD), plating method (electrolysis plating, chemical plating) etc. and form a film.Alternatively, it is also possible to by this
A little film-forming method combinations are a variety of.Wherein, preferred physical vapors such as vacuum vapour deposition, sputtering method, ion plating method, e-beam evaporation
Sedimentation, particularly preferably sputtering method.
The thickness of metal layer is not particularly limited.For example, by etch etc. removal metal layer face in a part by shape
When at pattern wiring, the thickness of metal layer can be suitably set so that the pattern wiring after being formed has desired resistance value.Cause
This, the thickness of metal layer is preferably 20nm~500nm, more preferably 100nm~200nm, further preferably 120nm~
180nm.When the thickness of metal layer is above range, the resistance of pattern wiring will not become excessively high, and the power consumption of device will not become larger.
In addition, the production efficiency of the film forming of metal layer improves, accumulation heat when film forming becomes smaller, and is not easy to generate hot gauffer in the film.
Second metal layer for the purpose of anti-oxidant can also be further set on the metal layer.For example, by metal
Have the second metal layer with the composition different from metal layer on layer, the adding when crystallization because of transparent conductive film can be inhibited
The heating when assembled of the devices such as heat, touch panel and so that metal layer aoxidize, the rising of the resistance that connects up.As such second gold medal
Belong to layer, preferably when being heated in the presence of oxygen be difficult to aoxidize, same etchant and metal layer can be utilized simultaneously
The metal layer being etched.Will be multiple metal layer patterning if can be etched by 1 time, the formation of pattern wiring can be made
It becomes easy.
When metal layer is substantially made of copper, in order to anti-oxidant, the second metal layer of setting on the metal layer is preferred
It is：It is made of copper-nickel alloy, relative to total 100 parts by weight of copper and nickel, the nickel containing 15~55 parts by weight.Second metal
The thickness of layer is preferably 5nm~100nm, more preferably 5nm~80nm, more preferably 5nm~70nm.The thickness of second metal layer
When too small, the effect as anti oxidation layer can not be played, when heating in the presence of oxygen, the metal layer being substantially made of copper has
The tendency being oxidized easily.
The patterning of metal layer is carried out preferably by etching.In etching, following method can be properly used：Utilize use
Cover the surface in corresponding with pattern wiring portion and interconnecting piece region in the mask that pattern is formed, using etchant to metal layer into
Row etching.It should be noted that when forming second metal layer on the metal layer in order to anti-oxidant equal, preferably etched by 1 time
Processing comes while removing metal layer and second metal layer.As etchant, copper chloride solution, ferric chloride solution, copper can be enumerated
Ammino-complex solution etc..
After removing metal layer, in the exposed division of transparent conductive film, gone by the part in the face by transparent conductive film
It removes and is formed and carried out patterned transparent electrode.The removal of transparent conductive film using etching it is also preferred that carried out.In etching,
Following method can be properly used：The surface in region corresponding with transparent electrode, profit are covered using the mask formed for pattern
Transparent conductive film is etched with etchant.In addition, when using the etchant also to metal layer with etch capabilities, preferably
Aforementioned pattern wiring portion and interconnecting piece are also masked covering surface.
The etchant used in the etching of metal layer, transparent conductive film etc. can according to formed transparent conductive film material and
Appropriate selection.When using ITO etc. as transparent conductive film, as etchant, acid can be properly used.As acid, such as can arrange
Enumerate the organic acids such as the inorganic acids such as hydrogen chloride, hydrogen bromide, sulfuric acid, nitric acid, phosphoric acid, acetic acid and their mixture and they
Aqueous solution.
Metal layer preferably has drafting department and non-drafting department, and the most narrow part of the width of the drafting department of metal layer is 50 μm
Hereinafter, more preferably 40 μm hereinafter, further preferably 30 μm or less.Graph thinning in this way, the displays such as touch panel are set
Standby narrow frame is possibly realized.
The crystallization of transparent conductive film can be before forming pattern wiring by removing metal layer, formation pattern wiring
Any stage before later and forming transparent electrode by removing transparent conductive film, after transparent electrode is formed carries out.
<Touch sensor>
The touch sensor of the present invention has used metal layer stacking transparent conducting film as described above, with resistive film side
The forms such as the touch panel of formula, capacitive way use.For example, metal layer stacking transparent conducting film can suitably be applied to
The touch panel of capacitive way, resistive film mode etc..
In the formation of touch panel, can metal layer be laminated transparent conducting film one or two interarea by
Transparent adhesive phase is bonded other base materials such as glass, macromolecule membrane etc..It is led for example, metal layer laminating transparent can be formed in
The stacking of transparent base is fitted on the face of the side for not forming transparent conductive film of electric thin film by transparent adhesive phase
Body.Transparent base can be made of 1 base film, can also be the laminated body of 2 or more base films (such as by transparent
The laminated body that is laminated of adhesive phase).
When the metal layer stacking transparent conducting film of the present invention is used for the formation of touch panel, touch surface can be carried out
Plate etc. shows the narrow frame of equipment, and can prevent the wiring trouble caused by the stripping of transparent conductive film.
Embodiment
Hereinafter, about the present invention, be described in detail using embodiment, the present invention without departing from its purport, just not by
Embodiment below limits.
<Embodiment 1>
(formation of hard conating)
In the transparent membrane formed by the pet film (hereinafter referred to as PET film) of 50 μm of thickness
The single side of base material is coated with the ultraviolet curing as hard conating formation coating fluid in a manner of being 1.5 μm using the thickness after drying
Type acrylic resin (JSR Corp. manufactures, the name of an article " KZ7503 ", refractive index 1.52), is heated 3 minutes at 80 DEG C, by
This makes dried coating film.Then, by with high voltage mercury lamp radiation accumulated light 200mJ/cm2Ultraviolet light and form hard conating.
(formation of resin layer)
Ultraviolet hardening acrylic resin (JSR Corp. manufactures, trade name " KZ7503 ", refractive index 1.52)
Compounding silica particle (Misao Kusano manufactures, the name of an article " PGM-ST ", average grain diameter 15nm) 20 in 100 parts by weight
Parts by weight prepare resin layer formation coating fluid.
The surface of hard conating on being formed in transparent film substrate is coated with tree in such a way that the thickness after drying is 40nm
Lipid layer formation coating fluid heats 3 minutes at 80 DEG C, thus makes dried coating film.Then, light is accumulated using high voltage mercury lamp radiation
Measure 200mJ/cm2Ultraviolet light, to form resin layer.
(formation of transparent conductive film)
Then, including Ar gases 80 volume % and O2The 4 × 10 of 20 volume % of gas-3In the atmosphere of Torr, use with
90：10 weight ratio has the target material of the sintered body of indium oxide and tin oxide, by DC magnetron sputtering methods on the resin layer with
The thickness of 20nm forms the second transparent conductive film (refractive index 2.00 of light).In second transparent conductive film, use is with 97：3
Weight ratio have indium oxide and tin oxide sintered body target material, form the by DC magnetron sputtering methods with the thickness of 4nm
One transparent conductive film.So operation forms the transparent conducting film being made of indium tin composite oxides.
Then, the PET film for the uncrystalline layer for being formed with above-mentioned indium tin oxide air is put into follow in a manner of roll-to-roll
Ring type baking oven carries out heat treatment in 90 minutes at 150 DEG C, and transparent conductive film is made to be converted into crystalloid by noncrystalline, makes saturating
The sheet resistance value of bright conductive film is the transparent conducting film of 150 Ω/.
(formation of metal layer)
In the first transparent conductive film of the transparent conducting film, under the decompression for having imported Ar, using anaerobic copper target,
The metal layer that the alloy-layer by layers of copper or comprising layers of copper is constituted is formed with the thickness of 150nm by DC magnetron sputtering methods, makes gold
Belong to layer stackup transparent conducting film.
(formation of metal wiring layer)
On the metal layer that transparent conducting film is laminated in the metal layer, dry film photoresist is bonded in the form of etchant resist
(Asahi Kasei Corporation, ATP-153).Exposure, development after, be warmed to 35 DEG C etching solution (ADEKA Corp. manufacture,
ITO-4400Z dipping 2 minutes in) carry out transparent conductive film and the etching process of metal layer, implement wiring processing.At this point, with cloth
Line width is patterned as 50 μm and 100 μm of mode, and the metal layer laminating transparent that making is formed with metal wiring layer is led
Electric thin film.
<Embodiment 2>
In embodiment 1, by aforementioned resin layer silica dioxide granule add 30 parts by weight, in addition to this by with implementation
1 same method of example makes the metal layer stacking transparent conducting film for being formed with metal wiring layer.
<Embodiment 3>
In embodiment 1, by aforementioned resin layer silica dioxide granule add 40 parts by weight, in addition to this by with implementation
1 same method of example makes the metal layer stacking transparent conducting film for being formed with metal wiring layer.
<Embodiment 4>
In embodiment 2, hard conating is not formed, metal is formed with by method making similarly to Example 2 in addition to this
Transparent conducting film is laminated in the metal layer of wiring layer.
<Comparative example 1>
In embodiment 1, by aforementioned resin layer silica dioxide granule add 10 parts by weight, in addition to this by with implementation
1 same method of example makes the metal layer stacking transparent conducting film for being formed with metal wiring layer.
<Comparative example 2>
In embodiment 1, by aforementioned resin layer silica dioxide granule add 60 parts by weight, in addition to this by with implementation
1 same method of example makes the metal layer stacking transparent conducting film for being formed with metal wiring layer.
<Comparative example 3>
In comparative example 2, hard conating is not formed, metal is formed with by method same as comparative example 2 making in addition to this
Transparent conducting film is laminated in the metal layer of wiring layer.
<Comparative example 4>
In comparative example 3, resin layer is not formed, metal is formed with by method same as comparative example 3 making in addition to this
Transparent conducting film is laminated in the metal layer of wiring layer.
<Evaluation>
(1) measurement of arithmetical average surface rugosity Ra
AFM sights are carried out using the scanning type probe microscope (SPI3800) of SII Nanotechnology Inc. manufactures
It examines.It measures and uses Si using contact mode, probe3N4It makes (spring constant 0.09N/m), is carried out with 1 μm of square of scanning, measure and calculate
Art average surface rugosity Ra.Evaluation result is shown in table 1.
(2) measurement of the surface-element ratio of Si
The coupons for preparing 5mm square, utilize X-ray photoelectron spectroscopic analysis method (ULVAC-PHI, INCORPORATED.
Manufacture, QuanteraSXM), 100 μm of φ (15kV, 25W) are set as using monochrome AlK α, X Ray setting with x-ray source
Condition is measured.Evaluation result is shown in table 1.
(3) measurement at position is peeled off in wiring
Wiring width is set as 100 μm, with visually to wiring 10 when the radical that peels off be measured.By cloth line width
Degree is set as 50 μm, and measurement is carried out similarly with aforementioned.Evaluation result is shown in table 1.
(4) measurement of thickness
For the thickness less than 1.0 μm, using transmission electron microscope, (Hitachi manufactures, product name " H-
7650 ") section of transparent conducting film is observed to measure.For 1.0 μm or more of thickness, using film thickness gauge, (Peacock is public
Department's manufacture, Digital dial gauge DG-205) it measures.
(5) measurement of sheet resistance value
According to JIS K7194, it is measured using 4 terminal methods.
[table 1]
(result and investigation)
In Examples 1 to 4, even if the position peeled off without wiring if in the case of graph thinning to 50 μm of wiring width
It sets, to observe the stripping of transparent conductive film, has obtained good result.It is thought that because, in the electrically conducting transparent of resin layer
There are the Si particles of specified amount for film side, it is possible thereby to the closing force of transparent conductive film/resin layer when improving laminated metal layer, it can
To inhibit the generation of wiring trouble (electric wire peeling etc.).On the other hand, in comparative example 1, due to the silica in resin layer
The additive amount of particle is very few, cannot improve the interface closing force of transparent conductive film/resin layer, if wiring width is made to narrow,
Transparent conductive film can be removed, and wiring processability is insufficient.In addition, in comparative example 2~3, due to the titanium dioxide in resin layer
The additive amount of silicon particle is excessive, electrically conducting transparent film stripping, and wiring processability is insufficient.In addition, in comparative example 4, due to not having
Resin layer is formed, the result of stripping is will appear when wiring width is 100 μm.
Reference sign
1 transparent base
2 resin layers
3 transparent conductive films
31 the 1st transparent conductive films
32 second transparent conductive films
4 metal layers
5 hard conatings
Claims (10)
1. transparent conducting film is laminated in a kind of metal layer, there is resin layer, thoroughly successively in at least one side side of transparent base
Bright conductive film, metal layer, wherein
The resin layer includes 15~55 parts by weight of inorganic oxide particles relative to 100 parts by weight of resin,
The transparent conductive film includes indium system complex oxide.
2. transparent conducting film is laminated in metal layer according to claim 1, wherein the indium system complex oxide is indium
Tin composite oxides.
3. transparent conducting film is laminated in metal layer according to claim 1 or 2, wherein the inorganic oxide particles
For silica dioxide granule.
4. transparent conducting film is laminated in metal layer according to claim 3, wherein the described of the resin layer transparent is led
The surface-element ratio (atom %) for the Si of the one side of electrolemma side measured by X-ray photoelectron spectroscopic analysis method is 0.1 former
The atoms of sub- %~11 %.
5. transparent conducting film is laminated in metal layer according to any one of claims 1 to 4, wherein the resin layer
The transparent conductive film side one side arithmetical average surface rugosity (Ra) be 1nm or less.
6. transparent conducting film is laminated in metal layer according to any one of claims 1 to 5, wherein the inorganic oxygen
The average grain diameter of compound particle is 10nm~60nm.
7. transparent conducting film is laminated according to such as metal layer according to any one of claims 1 to 6, wherein the metal
Layer is the laminated body of layers of copper, copper alloy layer or layers of copper and copper alloy layer.
8. transparent conducting film is laminated in metal layer according to any one of claims 1 to 7, wherein the metal layer
With drafting department, the part that the width of metal layer is most narrow is 50 μm or less.
9. transparent conducting film is laminated according to metal layer according to any one of claims 1 to 8, wherein the metal layer
Thickness be 100nm~200nm.
10. a kind of touch sensor, it includes metal layer according to any one of claims 1 to 9 stacking transparent conductivity is thin
Film.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-245081 | 2015-12-16 | ||
| JP2015245081A JP6600550B2 (en) | 2015-12-16 | 2015-12-16 | Metal layer laminated transparent conductive film and touch sensor using the same |
| PCT/JP2016/086754 WO2017104573A1 (en) | 2015-12-16 | 2016-12-09 | Metal layer–laminated transparent conductive film, and touch sensor using same |
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| Publication Number | Publication Date |
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| CN108367556A true CN108367556A (en) | 2018-08-03 |
| CN108367556B CN108367556B (en) | 2021-02-05 |
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| CN201680072184.XA Active CN108367556B (en) | 2015-12-16 | 2016-12-09 | Metal layer laminated transparent conductive film and touch sensor using same |
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|---|---|
| JP (1) | JP6600550B2 (en) |
| KR (1) | KR102650752B1 (en) |
| CN (1) | CN108367556B (en) |
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| WO (1) | WO2017104573A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020177294A1 (en) * | 2019-03-06 | 2020-09-10 | 南昌欧菲光科技有限公司 | Transparent conductive film, touch screen, and preparation methods therefor |
| CN111883284A (en) * | 2020-07-09 | 2020-11-03 | 北京载诚科技有限公司 | Double-sided conductive film, film coating method and touch screen |
| CN114503221A (en) * | 2019-10-01 | 2022-05-13 | 日东电工株式会社 | Conductive film and temperature sensor film |
| CN114521272A (en) * | 2019-10-01 | 2022-05-20 | 日东电工株式会社 | Conductive film, method for producing conductive film, and temperature sensor film |
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| JP6953170B2 (en) * | 2017-04-19 | 2021-10-27 | 日東電工株式会社 | Conductive film and touch panel |
| KR101991922B1 (en) * | 2017-04-28 | 2019-06-21 | 주식회사 진영알앤에스 | Au LAMINATED Cu FILM AND METHOD FOR MANUFACTURING THE SAME |
| JP6953204B2 (en) * | 2017-07-04 | 2021-10-27 | 日東電工株式会社 | Transparent conductive film and touch panel |
| CN112770901B (en) * | 2018-09-28 | 2023-03-10 | 富士胶片株式会社 | Optical film, laminated film, and touch panel |
| JP7262218B2 (en) * | 2018-12-17 | 2023-04-21 | 日東電工株式会社 | Conductive film with protective film and method for producing conductive film |
| CN113025975B (en) * | 2019-06-28 | 2022-08-30 | 中北大学 | Preparation process of passive MEMS sensor for complex component surface vibration measurement |
| JPWO2022038900A1 (en) * | 2020-08-19 | 2022-02-24 | ||
| KR20250030439A (en) * | 2022-07-01 | 2025-03-05 | 닛토덴코 가부시키가이샤 | Conductive film and method for producing conductive film |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI638722B (en) | 2018-10-21 |
| WO2017104573A1 (en) | 2017-06-22 |
| TW201731682A (en) | 2017-09-16 |
| JP2017109369A (en) | 2017-06-22 |
| JP6600550B2 (en) | 2019-10-30 |
| CN108367556B (en) | 2021-02-05 |
| KR20180095549A (en) | 2018-08-27 |
| KR102650752B1 (en) | 2024-03-22 |
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