CN108352229A - Low conductivity self-shileding insulator for ion implant systems - Google Patents
Low conductivity self-shileding insulator for ion implant systems Download PDFInfo
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- CN108352229A CN108352229A CN201680059373.3A CN201680059373A CN108352229A CN 108352229 A CN108352229 A CN 108352229A CN 201680059373 A CN201680059373 A CN 201680059373A CN 108352229 A CN108352229 A CN 108352229A
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- insulator
- slender body
- grooving
- features
- ion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/03—Mounting, supporting, spacing or insulating electrodes
- H01J2237/038—Insulating
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- Engineering & Computer Science (AREA)
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Abstract
The present invention relates to a kind of elongated insulators (302).The insulator can be positioned between the trepanning grounding electrode (308) of ion source and trepanning inhibition electrode (306).The insulator includes the slender body with first end (316) and second end (316), wherein one or more features (312) are defined in the slender body and increase the gas conduction path along the surface of the slender body from first end to second end.One or more of these features (312) are the groovings (314) extended to generally axially or with the axis of slender body at non-zero angle in slender body.One in these features (312) can include the flank extended from the radius of slender body.
Description
Citation of related applications
The application is the continuation Shen for the International Patent Application No. PCT/US16/61331 submitted on November 10th, 2016
Please, which requires in submission on November 10th, 2015, entitled " LOW CONDUCTANCE SELF-
The U.S. Provisional Application No. 62/253,399 of SHIELDING INSULATOR FOR ION IMPLANTATION SYSTEMS "
Priority, be incorporated by herein it is for reference.
Technical field
The present invention relates generally to ion implant systems, is more particularly to a kind of service time growth for extraction electrode
Insulator.
Background technology
In the manufacture of semiconductor device, ion implanting is used to semiconductor doping having impurity.Ion implant systems are frequent
It is utilized to during the manufacture of integrated circuit, by the workpiece of such as semiconductor wafer doped with the ion from ion beam, with
Just it generates the doping of N-shaped or p-type material or forms passivation layer.This beam treatment is commonly used to predetermined power level controlled dense
By the impurity Selective implantation chip of specific dopant material under degree, to generate semi-conducting material during making integrated circuit.It should
When ion implant systems are used for doped semiconductor wafers, selected ionic species is injected into workpiece, to generate required contain
Impurity material.For example, the injection ion generated from raw materials such as antimony, arsenic or phosphorus generates " N-shaped " impure material wafers, and
" p-type " impure material wafers often come from the ion generated using raw materials such as boron, gallium or indiums.
Typical ion implantation apparatus includes ion source, Ion Extraction device, quality analysis apparatus, beam transmission device and crystalline substance
Piece treating apparatus.Ion source generates required atom or the ion of molecular dopant type.This kind of ion be by extraction system always
Source is drawn, which is usually one group of electrode, these electrode excitations simultaneously lead ion flow of the control from source, form ion
Beam.Required ion is isolated from ion beam in quality analysis apparatus, which is typically magnetic dipole, to drawing
The ion beam gone out executes mass dispersion or mass separation.Beam transmission device is by beam transmission to chip processing device, simultaneously
It is typically a series of vacuum system for including focusing devices to maintain the expection property of ion beam, the beam transmission device.Finally, it passes through
By wafer handling system, semiconductor wafer is sent into and is sent out chip processing device, which may include one
Or multiple mechanical arms, for pending chip to be placed in front of ion beam and will be removed from ion implantation apparatus through handling chip.
Invention content
The present invention proposes that a kind of system, device and method for increasing electrical insulator service life, the electrical insulator are all
The insulator being such as used in ion beam implantation systems.Accordingly, the brief overview of the present invention is introduced below, so as to certain to the present invention
A little aspects have basic understanding.The exhaustive overview of this part of the disclosure and non-present invention.It is both not intended to determine the present invention's
Key element or main element, also non-limiting the scope of the present invention.It is intended that the certain of the present invention are presented in simplified form
Design, the introduction as following detailed description.
The present invention proposes that a kind of increase is used for ion implantation apparatus and/or especially CVD, PVD, MOCVD, etching machines etc.
The design of the insulator service life of other semiconductor processing equipments.During the operation of this equipment, dielectric member is usual
Can it be covered with conductive material over time, therefore the surface of insulator is caused to lose its insulating property (properties).Once the table of insulator
Face is covered with conductive material, is just likely to occur electric arc, and it is thus necessary to replace insulator.The insulator intended application of the present invention is in wherein
Gas explosion release species or galvanic insulation body any semiconductor processing equipment of problems.
For example, when insulator is used to that the extraction electrode of component or ion implantation apparatus in ion source to be made to electrically isolate, respectively
Kind conductive material may be susceptible to the surface for being attached to insulator, thus reduce the function service life of insulator.For example, coming from arc chamber
Free carbon, tungsten and the molybdenum atom of sputtering/etching of room or extraction electrode and the required metal component of ion beam may be susceptible to attached
The surface of insulator, thus the impaired conduction pathways across insulator surface are provided, decreases the function service life of insulator.
In addition, the fluorine drawn is (for example, make GeF4、BF3、SiF4、PF3The common by-product to burst with other fluorine-based impurity gas
Object) it may react to form CF with graphite extraction electrode holex, this is highly corrosive conduction gas, can be with insulator material
Material reacts and leaves conductibility carbon coating.For example, more than 100 hours injection 5 sub-ke Vs (sub-keV) arsenic and boron
Chemical analysis electron spectrum (ESCA, Electron the Spectroscopy for of (such as B-11) to insulator surface
Chemical Analysis) show that the initial carbon surface concentrations after ion sputtering in 20 seconds are very high (for example, respectively 80% He
60% atomic carbon).Other exemplary elements that descending is presented can include fluorine, molybdenum, aluminium, tungsten and calcium.
Insulator of the present invention can be implemented on the required metal ion scattering of transmission (for example, being attributed to space electricity
Lotus or ion neutralize) ion beam line each region or ion beam strikes surface and so that conductibility coating is sputtered and be coated to
In the region of neighbouring insulator.
Accordingly, the present invention provides a kind of self-shileding insulator, has the screen defined by the geometry of the insulator
Feature is covered, for protecting the surface of the insulator from being coated with conductive material.The shielding of the geometry of this insulator is special
Sign can advantageously be reduced to the conductibility of insulator surface and protect insulator from that may reduce its validity that insulate
Material.This kind of shielding characteristic, which can also advantageously increase the surface area of insulator and further increase the tracking of insulator, to be grown
Degree, this is the length needed for the current potential of insulator.The scale and geometric configurations of this shielding are at by means of by being not provided with that
This excessively close surface maintains its work without causing failure because of electric arc by so that these surfaces is spaced too far
For the validity of shielding.
Therefore, to address related purpose before realization, the present invention includes being hereinafter fully described and especially in detail in the claims
Pointed feature.Following explanation and attached drawing are set forth in detail in certain illustrative embodiments of the present invention.However, these embodiment party
Case only shows a few in the multitude of different ways using the principle of the invention.In the case where being considered in conjunction with the accompanying, under
Literary detailed description of the present invention, which will become more apparent that, understands other objects of the present invention, advantage and novel features.
Description of the drawings
Fig. 1 is the block diagram according to the exemplary ion injected system of several respects of the present invention.
Fig. 2 is the sectional plain-view drawing according to the exemplary ion injected system of several respects of the present invention.
Fig. 3 is the perspective view according to the exemplary extraction electrode equipment with insulator of various aspects of the present invention.
Fig. 4 is the exploded view according to the exemplary extraction electrode equipment with insulator of various aspects of the present invention.
Fig. 5 is the sectional view according to the insulator of the associated present invention of extraction electrode of various aspects of the present invention.
Fig. 6 A are the perspective views according to an exemplary insulator of the invention.
Fig. 6 B are the plan views according to the insulator of Fig. 6 A of various aspects of the present invention.
Fig. 6 C are the sectional views according to the insulator of Fig. 6 A to Fig. 6 B of various aspects of the present invention.
Fig. 7 A are the perspective views according to the exemplary another insulator of the present invention one.
Fig. 7 B are the sectional views according to the insulator of Fig. 7 A of various aspects of the present invention.
Fig. 8 A are the perspective views according to another exemplary insulator of the invention.
Fig. 8 B are the sectional views according to the insulator of Fig. 8 A of various aspects of the present invention.
Fig. 9 A are according to an exemplary also a kind of plan view for insulator of the invention.
Fig. 9 B are the sectional views according to the insulator of Fig. 9 A of various aspects of the present invention.
Figure 10 illustrates the method flow diagram for being used to form insulator according to another aspect of the invention.
Specific implementation mode
The present invention relates generally to a kind of system, device and method manufacturing the electrical insulator for ion implant systems.
In view of this, illustrated the present invention now with reference to attached drawing, wherein identical reference numeral be used to refer in the whole text it is identical
Element.It should be appreciated that the description in terms of these only for explanation, and shall not be construed as limiting purpose.In the following description, go out
Many details are illustrated in task of explanation, in order to provide complete understanding of the present invention.However, people in the art
Member can show and be apparent from, and the present invention can be implemented in the case where not having these details.
Referring now to attached drawing, Fig. 1 illustrates exemplary ion injected system 100 proposed by the present invention, wherein can be noted in ion
Enter and implements each aspect of the present invention in system.According to an example, ion implant systems 100 have terminal 102, beam-line components 104
And terminal station 106.Terminal 102 for example includes the ion source 108 powered by high voltage power supply power supply unit 110, and wherein the ion source is produced
Raw ion beam 112 is simultaneously guided through beam-line components 104, final to arrive at terminal station 106.For example, ion beam 112 can be taken a little
The form of shape beam, pencil beam, ribbon-shaped beam or any other shaped beam.Beam-line components 104 further there is beam to lead 114
With mass analyzer 116, wherein dipole magnetic field is established, only to allow the ion of appropriate charge-mass ratio to be led at 114 outlet end across beam
Aperture 118 arrive at and be positioned at workpiece 120 (for example, semiconductor wafer, display panel etc.) in terminal station 106.
According to an example, ion-beam scanning mechanism 122 (such as electrostatic or electromagnetic type scanner, commonly referred to as " scanning
Instrument ") it is configured at least one first direction 124 relative to workpiece 120 (for example, the +/- directions y, the also referred to as first scanning
Path or " quickly scanning " axis, path or direction) scanning ion beam 112, wherein limit ribbon ion beam or it is scanned from
Beamlet 126.In addition, also providing workpiece scanning system 128 in this example, the wherein workpiece scanning system is configured at least one
(for example, the +/- directions x, also referred to as the second scan path or " slow scanning " axis, path or direction) is logical in a second direction 130
Cross 112 selective scanning workpiece 120 of ion beam.
For example, ion beam scanning systems 122 and workpiece scanning system 128 can be separated to set up or cooperate and be set up,
It is scanned in order to provide the required workpiece relative to ion beam 112.In another example, ion beam 112 is in a first direction on 124
By electrostatic scanning, wherein generate scanned ion beam 126, and workpiece 120 in second direction 130 by it is scanned from
Beamlet and by mechanical scan.The electrostatic scanning of this ion beam 112 and workpiece 120 and the combination of mechanical scan will produce
So-called " hybrid scanning (hybrid scan) ".The present invention is suitable for scanning the whole of workpiece 120 relative to ion beam 112
Combination, or vice versa.Additionally, it is provided controller 132, wherein controller are configured to the one of control ion implant systems 100
A or multiple components.
Another exemplary ion injected system 200 is proposed in fig. 2, and in the shared U.S. Patent No. of Huang et al.
It is further proposed that various ion implant systems, are incorporated by for reference herein in 7,915, No. 597.The ion implanting of Fig. 1
System 200 illustrates a kind of exemplary high dose ion injected system 202, each using being proposed below with respect to various aspects of the present invention
Kind feature.It should be pointed out that the ion implant systems 100 of Fig. 1 and Fig. 2 and 200 various other configuration systems are contemplated as falling within the present invention
In the range of.Injected system 200 includes multiple subsystems, such as including：Ion source 204, for generating ion beam (not shown)；
Beam-line components 206 comprising be used for the mass analysis magnets of quality analysis ion beam；Radiation channel accelerator/retarder 210；
And terminal station 212, it includes for making workpiece 216 reciprocate through the workpiece scanner 214 of stationary ion beam.
Exemplary extraction electrode component 218 can be arranged to draw ion from ion source 204, wherein in figure 3 into one
Step provides the particular example of the extraction electrode component.For example, extraction electrode component 218 is by two matched graphite disc-shaped components
220 and 224 are constituted.Disc-shaped components 220 are assembled with 222 and are aligned in the common plane perpendicular to predetermined beam path,
These components are spaced to define the elongate gap 224 that the ion for the ion source 204 for leaving Fig. 2 passes through.For example, Fig. 3
Extraction electrode component 218 can precisely align scheduled ion beam path.
For example, the ion source 204 that extraction electrode 224 and 226 such as shown in Fig. 3 is generally mated Fig. 2 is used to wherein draw certainly
Go out ion beam, the outlet opening 228 in the front 230 that the ion wherein formed in closed chamber passes through ion source is drawn.Ion source
204 front 228 forms trepanning source electrode (sometimes referred to as extraction electrode), is in the current potential of ion source.For example, extraction electrode
224 and 226 include that trepanning inhibits electrode 234 and trepanning grounding electrode 236, the source electrode of alignment trepanning first with allow from from
The ion beam that component 204 is sent out passes through.For example, each hole has the configuration of elongated slot.
For example, coordinating the ceramic partition between disc-shaped components 220 and 222 by using spring-loaded shoulder screw 238
Or insulator 240, it can be in that spaced relationship is fixed to trepanning grounding electrode 236 that trepanning, which inhibits electrode 234, and it is flat to provide a kind of interval
Capable relationship and being electrically insulated therebetween.
Fig. 4 illustrates the exploded view of extraction electrode component 218, and inhibition electricity is arranged or be installed on to wherein ceramics insulator 242
Between pole 234 and grounding electrode 236, so as to which electrode is inhibited to be electrically isolated with grounding electrode.For example, grounding electrode 236 can limit
Electric field between grounding electrode and ion source travels in the region in grounding electrode downstream.For example, inhibiting electrode 234 by voltage source
It is biased relative to ground terminal at negative potential, and operates into the electronics in the ion beam for preventing 236 downstream of grounding electrode
It is inhaled into lead-out area and enters ion source.
Inhibition electrode 234 and grounding electrode 236 are mounted to ion source that can be along the direction that ion beam is advanced relative to Fig. 2
204 movements, so as to according to energy " adjustment (the tune) " extraction electrode for the beam drawn from ion source.Inhibit electrode 234
Further be mounted so as to inhibit with grounding electrode 236 electrode and grounding electrode can be approximately perpendicular to relative to ion source 204 from
Beamlet direction is opposite to be displaced sideways.It is also possible to propose a kind of mechanism for changing the size of electrode hole gap.
The energy of the ion beam sent out from extraction electrode component 218 is determined by being supplied to the voltage of ion source 204.Supply
Representative value to the voltage of ion source 204 is 20kV, provides the extraction beam energy of 20keV.However, also can get 80keV or more
Or 0.5keV extraction beam energies below.In order to obtain higher or lower beam energy, source voltage is respectively increased or reduced.
Practice have shown that the ionization source gas in conjunction with present in the environment, the ion source 204 with ion implant systems 200
It may lead to inhibit electrode 234 and grounding electrode 236 and therebetween with 218 associated voltage bias of extraction electrode component
Insulator 240 on form deposit.This kind of deposit may cause adverse effect to the operation of ion implant systems 200, tool
Body is the decomposition for causing insulator 240, the deposit on insulator and coat, the insulation of especially this kind of deposit and decomposition
Body is uncontrollably discharged and is discharged, therefore generates contaminant particles, they are transmitted to its of ion implant systems with ion beam
He part and be ultimately delivered to the workpiece 216 just injected.
It should be pointed out that described in the shared american documentation literature the 9006690th of Colvin et al. it is a kind of for from
The exemplary system of modulator electrode voltage in component extraction electrode equipment, and in shared U.S. Patent Application Publication document
A kind of method polluted for reducing particle in ion implant systems is further described in No. 20110240889, these documents
It is incorporated by for reference herein.
Extraction electrode equipment 218 is generally arranged in the environment of conductive gas, and wherein conductive gas can arrive
Up on all parts.Before this, the insulating property (properties) of insulator 240 deteriorates at any time, because the insulator, which is coated with, comes from gas
The conductive material of body.Once being partially coated with conductive material, current potential will cross over insulator using gas as conductive material
Surface.In the past, the shielding of insulator 240 was provided via the cup body (cup) 244 around ceramics insulator positioning.However, in gas
In body environment, gas can reach between cup body 244 and coat the surface of insulator 240, thus cause electric arc and above-mentioned
Pollution.
However, the present invention draws by a kind of novel electrical insulator of proposition and for being improved by manufacturing the method for insulator
Go out the service life of electrode equipment 218.More especially, insulator is arranged and is implemented on ion implant systems 100 and 200 and draws
Go out in electrode equipment 218, thus minimizes the possibility coated with conductive material of insulator.
The present invention advantageously proposes a kind of insulator, has and helps to limit along the surface of insulator coating conductive gas
Feature.By the one or more features of the end set such as grooving (undercut) in insulator, these features can prolong
The service life of long insulator, because its surface becomes coated with conductive material and needs longer time quantum.
According to an example, the exploded view of exemplary extraction electrode equipment 300 is shown in FIG. 4, wherein insulator 302 positions
Between the cup body 304 of extraction electrode equipment.For example, the extraction electrode equipment 300 and insulator 302 of Fig. 4 be applicable to Fig. 1 and
The ion implant systems 100 and 200 of Fig. 2.Similarly, insulator 302 of the invention can modified or adjustment with there are gas biographies
It leads in various other semiconductor processing systems with arcing problems and implements.
As shown in figure 4, insulator 302, which is formed by ceramic material and arranged or be installed on, inhibits electrode 306 and ground connection electricity
So as to which electrode is inhibited to be electrically isolated with grounding electrode between pole 308.For example, insulator 302 is by screwing in shoulder screw therein
310 and be coupled to and inhibit between electrode 306 and grounding electrode 308.Fig. 5, which illustrates to be assembled in, inhibits electrode 306 and grounding electrode
The enlarged drawing of insulator 302 between 308, thus insulator be coupled to suppression by screwing in shoulder screw 310 in insulator
Between electrode and grounding electrode processed.
According to this example, insulator 302 includes being defined in one or more of features 312.For example, in Fig. 6 A to figure
The insulator 302 of Fig. 5 is illustrated in 6C in more detail, wherein one or more features 312 are shown in the section of Fig. 6 C 313,
Such as include one or more groovings associated with one or more ends 316 of insulator 300 314.For example, one or more
Grooving 314 is configured to make air-flow is low to be transmitted to substantially shielding area associated with the grooving of insulator 302 318.As such, big
It causes the surface 320 of the insulator 302 in shielding area 318 to be advantageous to keep in one section of longer time section not to be gas
In conductive material coated by.As such, being substantially impeded from voltage potential crosses over gap 322 associated there.For example, at least portion
It is poor based on expection voltage seen in the extraction electrode equipment 300 by Fig. 5 to divide, can be via the size of one or more groovings 314
Or geometry and Optimization gap 322.Expection voltage associated with extraction electrode equipment 300 is higher, for example, the insulation of Fig. 6 C
Grooving 314 in body 302 may be deeper so that the voltage will not form electric arc across gap 322.
Compared to conventional insulator, gas needs more times just can be into the substantially screen of the insulator 302 of Fig. 6 C
It covers region 318 and conductive material is coated on surface 320.Therefore, one or more groovings 314 itself are as insulator 302
A part provides shielding.Accordingly, insulator 302 of the invention can be considered self-shileding ontology.As such, between the cup body 304 of Fig. 5
Gap 324 (as shown by arrows) can optimize for equipment etc., and before this, if the gap between cup body is excessive
Or it is too small, then the effect of these cup bodies is invalid because of the electric arc between excessive gas conduction or cup body.
The present invention is understood at present, and the pattern of electrical conductivity, which is derived mainly from, passes through at any time and form coating on insulator
Conductive gas.If limiting or reducing coating in some regions, electric arc can be formed substantially prevented from across its surface.It reduces
Conduction can reduce the flowing of gas, thus one or more features 312 (for example, one or more groovings 314, groove, recess portion,
Spine, flank) help to limit the transfer (for example, reducing the conduction of gas) of gas, therefore it is exhausted substantially prevented from complete coating
The surface 320 of edge body 302, and then maintain the insulating property (properties) of insulator.
Therefore, the present invention proposes a kind of insulator 302, limits air flow through the substantially blind zone of (i.e. gas conduction) grooving
Domain 318 (for example, one or more groovings 314), and electricity will not occur on the surface of insulator 320 in substantially shielding area
Plating.If substantially shielding area 318 is not coated, the insulating property (properties) of insulator 302 substantially maintains.Such as gap 322 and its
The size of depth can optimize for treatment conditions.For example, being directed to larger current potential, gap 322 can be larger, with arc protection.
As such, gap 322 and length associated there are envisioned for can be changed based on the voltage used by the present invention.
According to another example, Fig. 6 A to Fig. 6 C illustrate one or more features 312 and may further include one or more
A flank 326, wherein one or more flanks increase the area on the surface 320 of insulator 302.For example, as gas is by surface
320 are coated with conductive material, and the large surface area that one or more flanks 326 are provided further provides for be coated and permitting
Perhaps the additional areas of electric arc.It should be pointed out that one or more flanks 326 are optional, for example, if cup body 304 is closer to, it can
It saves except one or more flanks, there may be arcing problems at this time.
For example, by the way that one or more groovings 314 are arranged in the insulator 302 of Fig. 6 C, insulator 302 is significantly increased
The area on surface 320.As such, one or more groovings 314 provide additional surface area, and further provide for shroud of gas.One
The size or shape of a or multiple groovings can advantageously limit the conductive gas amount for flowing into substantially shielding area 318, thus
The plating on insulator 302 is limited, then limitation is conducted and is electroplated by plating and combined with conductive gas.Voltage electricity
The difference of potential gradient may lead to end 316 of the gap 322 adjacent or near to insulator 302.The present invention is understood, it is expected that between making
Gap 322 is kept closely as far as possible, and is not large enough to prevent electric arc.The present invention also allows cup body 304 of not Fig. 5 the case where
Lower use, because one or more groovings 314 being capable of the potential appropriate amount that air-flow is reduced to limitation electric arc.
The present invention is understood, in ion implanting by-product one is the material of free floating (for example, tungsten, molybdenum, carbon).When
When using fluorine gas, for example, tungsten fluoride, molybdenum fluoride and carbon fluoride gas can be generated.This kind of material can cause conventional insulation
Body coating about 80% to 90%.One or more groovings 314 advantageously cover substantially shielding area 318, accordingly even when insulator
302 remaining outer surface 320 is coated, and substantially shielding area 318 (for example, region of grooving) can also keep uncoated.Cause
This, one or more groovings 314 of the invention advantageously increase " trace lengths (tracking length) ", the wherein tracking
Length is given voltage jump or forms the length in gap needed for electric arc across or along the surface of insulator.The one of the present invention
A or multiple groovings 314 advantageously increase trace lengths, and do not increase the length of insulator 302.In addition, substantially shielding area
318 by substantially over therefore it reduces the conduction of gas or corrosion or the otherwise chance of Damage to insulation body 302.It can
Increase surface area so that one or more flanks 326 or other features are further arranged, and then increases trace lengths.
It is still further contemplated that the various configurations of the one or more features 312 of insulator 302.For example, Fig. 6 A extremely scheme
The insulator 302 of 6C has two groovings 314 close to its each end 316.It is another as shown in the example of Fig. 7 A to Fig. 7 B
Insulator 330 includes single grooving associated with each end 316 314.Insulator 330 may further include arbitrary number
Flank 326, such as shown in Fig. 7 A to Fig. 7 B, including multiple flanks.
Fig. 8 A to Fig. 8 B illustrate another insulator 340, do not have grooving, but one or more features 312 include
Multiple flanks 326.For example, multiple flanks 326 can be positioned or be set according to various designs associated there or operational norm
It is sized.Fig. 9 A to Fig. 9 B illustrate another insulator 350, wherein the insulator include in the end of the insulator 316
One or more it is associated oblique or beveling grooving 352, as shown in the section 354 of Fig. 9 B.As such, understand in turn,
One or more groovings 352 can also be arranged via the groove (not shown) angled with the axis 356 of insulator with absolutely
In the intermediate region of edge body (between end 316).
Present invention further propose that a kind of insulator, can be moulded directly as expected shape, followed by firing
Or solidification.For example, this insulator is by the ceramics of the system suitable for such as ion implant systems, aluminium oxide, boron nitride or appoints
What insulating material.
In terms of another exemplary according to the present invention, a kind of method for manufacturing the insulator for including grooving is proposed.This
Invention is understood, and making feature again after firing or curing insulator may be very difficult, and usually requires special work
It is slower etc. to have (for example, the drill bit etc. for the hard rock that is inlaid with gold), tool velocity.If in this way, forming feature after firing, meeting is because of clast
Etc. leading to very high rejection rate.Therefore, the present invention proposes, grooving is formed in the insulator before firing, thus via Hole saw
Or similar means are molded or are cut to define grooving, and insulating materials still has ductility or " unprocessed ", then, on boundary
After determining grooving, insulator is fired or cured.For example, can be by the body casting of insulator at overall size, it then can be through
Grooving is defined by Hole saw or other tools, is then fired or cures.This method advantageously reduce hardening tool and/
Or product damages relevant manufacturing cost.
Accordingly, as shown in Figure 10, present invention further propose that a kind of method being used to form insulator according to the present invention
400.Although should be pointed out that and illustrate illustrative methods herein with a series of actions or event, it should be recognized that the present invention is not
Be only limitted to it is this kind of action or event shown order, according to the present invention, certain steps can with different order execute and/or with except this
Other outer steps illustrated and described by text are carried out at the same time.In addition, not described each step is necessarily used for realizing according to the present invention
Method.And, however, be appreciated that the method is come in combination with system as described herein and in conjunction with not illustrated other systems in text
Implement.
As shown in figure 11, in action 402, method 400 starts from being formed the ontology of insulator, such as by by aoxidizing
Aluminium, boron nitride or any insulating material cast ontology.Once ontology is generally formed in action 402, in action 404
Form one or more features, such as above-mentioned grooving.For example, via Hole saw or other tools, one is formed in action 404
A or multiple features.After forming one or more features in action 404, insulator is fired or cured in action 406,
Thus it hardens insulator and its final insulating property (properties) is provided.For example, the size setting of one or more features can determine into
So that the predetermined contraction during curing or firing generates scheduled final size.
Although present disclosure is illustrated with regard to a certain or certain preferred embodiments, based on to explanation of the invention
The reading and understanding of book and attached drawing, equivalent variations and modification are apparent for a person skilled in the art.Especially in regard to
Otherwise the various functions executed by said modules (assembly, device, circuit etc.) are used to describe these components if non-specifically indicating
Term (including referring to " component ") be intended to correspond to the arbitrary portion for the specific function (i.e. functionally equivalent) for executing the component
Part, even if its structure being not equal in structure disclosed in execution invention as described herein typical embodiments is as the same.This
Outside, although only disclosing particularly unique feature of the present invention with regard to a kind of scheme in multiple embodiments, if being suitable for or being conducive to any finger
Fixed or specific application, then this feature is in combination with other features of the one or more of other embodiments.
Claims (20)
1. a kind of insulator, including the slender body that has a first end and a second end, wherein the slender body, which has, to be defined in
One or more of features, and wherein, one or more of features increase from the first end to the second end
Gas conduction path.
2. insulator as described in claim 1, wherein one or more of one or more of features include generally
Extend axially into the grooving in the slender body.
3. insulator as claimed in claim 2, wherein the grooving is from one in the neighbouring first end and the second end
A or multiple position is oppositely extending towards respective first end and second end.
4. insulator as claimed in claim 2, wherein the grooving is U-shaped in general.
5. insulator as described in claim 1, wherein one or more of one or more of features include generally
Extend radially into the grooving in the slender body.
6. insulator as claimed in claim 5, wherein the grooving is from one in the neighbouring first end and the second end
A or multiple position is oppositely extending towards respective first end and second end.
7. insulator as claimed in claim 5, wherein the grooving is U-shaped in general.
8. insulator as described in claim 1, wherein one or more of one or more of features include with it is described
The axis of slender body extends to the grooving in the slender body at non-zero angle.
9. insulator as claimed in claim 8, wherein the grooving is from one in the neighbouring first end and the second end
A or multiple position is oppositely extending towards respective first end and second end.
10. insulator as described in claim 1, wherein the grooving increases along the surface of the slender body from described the
One end to the gas conduction path of the second end.
11. insulator as described in claim 1, wherein one or more of one or more of features include from institute
The radius for stating slender body extends.
12. insulator as claimed in claim 11, wherein one or more of one or more of features include and institute
The axis grooving at an acute angle extended in the slender body of slender body is stated, and wherein, the grooving is from adjacent to described
The position of one or more of first end and the second end is and described towards the oppositely extending of respective first end and second end
First end and the second end include grooving.
13. insulator as described in claim 1, wherein the slender body includes the surface being electrically insulated.
14. insulator as described in claim 1, wherein the slender body is made of the material that is electrically insulated.
15. a kind of ion source, including：
Trepanning grounding electrode；
Trepanning inhibits electrode；And
Inhibit the insulator between electrode positioned at the trepanning grounding electrode and the trepanning, wherein the insulator includes tool
There is the slender body of first end and second end, wherein the slender body, which has, is defined in one or more of features, with
And wherein, one or more of features increase along the surface of the slender body from the first end to the gas of the second end
Body conducting path.
16. ion source as claimed in claim 15, wherein one or more of one or more of features include substantially
On extend axially into grooving in the slender body.
17. ion source as claimed in claim 15, wherein one or more of one or more of features include and institute
The axis for stating slender body extends to grooving in the slender body at non-zero angle.
18. ion source as claimed in claim 17, wherein the grooving is from the neighbouring first end and the second end
One or more positions is towards the oppositely extending of respective first end and second end.
19. ion source as claimed in claim 17, wherein one or more of one or more of features include from institute
The radius for stating slender body extends.
20. a kind of method forming insulator, including：
Form the ontology of the insulator made of insulating materials；
After forming the ontology, one or more of ontology feature is formed；And
One or more of features once being formed just cure the ontology.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562253399P | 2015-11-10 | 2015-11-10 | |
| US62/253,399 | 2015-11-10 | ||
| PCT/US2016/061331 WO2017083516A1 (en) | 2015-11-10 | 2016-11-10 | Low conductance self-shielding insulator for ion implantation systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108352229A true CN108352229A (en) | 2018-07-31 |
Family
ID=57396837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680059373.3A Pending CN108352229A (en) | 2015-11-10 | 2016-11-10 | Low conductivity self-shileding insulator for ion implant systems |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2018533184A (en) |
| KR (1) | KR20180081483A (en) |
| CN (1) | CN108352229A (en) |
| TW (1) | TWI745319B (en) |
| WO (1) | WO2017083516A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114551195A (en) * | 2020-11-19 | 2022-05-27 | 住友重机械离子科技株式会社 | Insulating structure, manufacturing method of insulating structure, ion generating apparatus, and ion implantation apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11791126B2 (en) | 2019-08-27 | 2023-10-17 | Applied Materials, Inc. | Apparatus for directional processing |
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| CN101071752A (en) * | 2006-05-10 | 2007-11-14 | 台湾积体电路制造股份有限公司 | High current ion implantation system and improved device and insulator therein |
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| US9117630B2 (en) * | 2013-03-29 | 2015-08-25 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Insulation structure of high voltage electrodes for ion implantation apparatus |
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| GB191516550A (en) * | 1915-11-23 | 1916-09-14 | John Brightwen Alexander | Improved Telegraph or Telephone Line Insulator. |
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| KR100796795B1 (en) | 2001-10-22 | 2008-01-22 | 삼성전자주식회사 | A contact portion of a semiconductor device, a method of manufacturing the same, and a thin film transistor array substrate for a display device including the same, and a method of manufacturing the same |
| WO2011146571A2 (en) | 2010-05-21 | 2011-11-24 | Applied Materials, Inc. | Tightly-fitted ceramic insulator on large-area electrode |
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2016
- 2016-11-10 KR KR1020187008472A patent/KR20180081483A/en not_active Withdrawn
- 2016-11-10 CN CN201680059373.3A patent/CN108352229A/en active Pending
- 2016-11-10 WO PCT/US2016/061331 patent/WO2017083516A1/en active Application Filing
- 2016-11-10 JP JP2018521416A patent/JP2018533184A/en active Pending
- 2016-12-07 TW TW105140399A patent/TWI745319B/en active
Patent Citations (5)
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|---|---|---|---|---|
| JPS6260873A (en) * | 1985-09-10 | 1987-03-17 | Toshiba Corp | Electrical insulating member for film forming and method therefor using said member |
| CN101326595A (en) * | 2005-12-09 | 2008-12-17 | 西门子公司 | Die-cast outer tapered insulating sleeve |
| CN101071752A (en) * | 2006-05-10 | 2007-11-14 | 台湾积体电路制造股份有限公司 | High current ion implantation system and improved device and insulator therein |
| CN103597553A (en) * | 2011-06-09 | 2014-02-19 | Abb技术有限公司 | Strengthening element for a mounting flange of a hollow cylindrical insulator housing |
| US9117630B2 (en) * | 2013-03-29 | 2015-08-25 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Insulation structure of high voltage electrodes for ion implantation apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114551195A (en) * | 2020-11-19 | 2022-05-27 | 住友重机械离子科技株式会社 | Insulating structure, manufacturing method of insulating structure, ion generating apparatus, and ion implantation apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201824323A (en) | 2018-07-01 |
| TWI745319B (en) | 2021-11-11 |
| WO2017083516A1 (en) | 2017-05-18 |
| KR20180081483A (en) | 2018-07-16 |
| JP2018533184A (en) | 2018-11-08 |
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