CN108335666A - A kind of the silicon substrate OLED pixel circuit and its method of compensation driving tube threshold voltage shift - Google Patents

Abstract

The invention discloses a kind of the silicon substrate OLED pixel circuit and its method of compensation driving tube threshold voltage shift, which is made of 6 metal oxide semiconductor field effect tubes, 1 storage capacitance and 1 Organic Light Emitting Diode.The silicon substrate OLED pixel circuit and its method for compensating driving tube threshold voltage shift are stored in the threshold voltage and data voltage of driving tube in storage capacitance in the threshold voltage compensation stage, and driving tube is made to be operated in saturation region, so that the operating current of Organic Light Emitting Diode is unrelated with the threshold voltage of driving tube, to eliminate influence of the driving tube threshold voltage shift to Organic Light Emitting Diode operating current, the brightness uniformity for improving silicon substrate OLED micro-displays improves the display effect of micro-display.

Description

A silicon-based OLED pixel circuit and method for compensating threshold voltage drift of drive tube

technical field

The invention relates to the field of micro-display technology, in particular to a silicon-based OLED pixel circuit and a method for compensating the drift of the threshold voltage of a drive tube.

Background technique

Silicon-based OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) microdisplay is a flat-panel display technology that manufactures OLEDs on silicon wafers. The diagonal size of the screen is generally less than 1 inch (25.4mm). It not only has the advantages of small size, large field of view, high information content, light weight, and portability, but also has all the advantages of OLED, such as low power consumption, self-illumination, wide viewing angle, short response time, and wide operating temperature range. In near-eye display and portable wearable devices, it involves various industries and fields such as scientific research, entertainment, communication, military, and medical treatment.

The earliest active silicon-based OLED pixel circuit is the 2T1C (2-Transistor-1-Capacitor) pixel drive circuit. Please refer to Figure 1, the 2T1C pixel driving circuit is composed of 2 MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor), Metal-Oxide-Semiconductor Field Effect Transistor) T ₁ , T ₂ and a capacitor C _s , where T ₁ is a switch tube, T ₂ is a drive tube, and C _s is a storage capacitor. In the addressing phase, the scan line control switch _T1 is turned on, and the data voltage is stored in the storage capacitor _Cs ; in the light emitting phase, the scan line control switch _T1 is turned off, and the data voltage stored in the storage capacitor _Cs maintains _T2 conduction, the conduction current makes the OLED emit light, the magnitude of the conduction current is I _OLED =k(V _gs -V _th ) ² , where k is the current amplification factor of the drive tube _T2 , and V _gs is the gate of the drive tube _T2 Source voltage, V _th is the threshold voltage of drive tube _T2 . However, with the improvement of the resolution of silicon-based OLED microdisplays and the reduction of the pixel area, the problem of the threshold voltage V _th drift of the driving tube between each pixel circuit cannot be ignored, so that under the given equal data voltage drive, different pixels The driving current between circuits is different, because the luminous brightness of OLED is proportional to the luminous current, so the threshold voltage drift of the driving tube will cause deviations in the luminous brightness of different pixels, which will reduce the brightness uniformity of silicon-based OLED microdisplays.

For the above-mentioned problems existing in the 2T1C pixel circuit, the present invention proposes a silicon-based OLED pixel circuit that compensates the threshold voltage drift of the driving tube, which can eliminate the influence of the threshold voltage drift on the working current of the OLED light-emitting device and improve the display of the silicon-based OLED microdisplay. Effect.

Contents of the invention

The purpose of the present invention is to provide a silicon-based OLED pixel circuit that compensates the drift of the threshold voltage of the driving tube to solve the problem that the drift of the threshold voltage V _th of the driving tube in the existing silicon-based OLED pixel circuit affects the working current of the OLED.

In order to solve the above problems, a technical solution adopted by the present invention is to provide a silicon-based OLED pixel circuit, which includes a first metal-oxide-semiconductor field effect transistor, a second metal-oxide-semiconductor Field effect transistor, third metal-oxide-semiconductor field effect transistor, fourth metal-oxide-semiconductor field effect transistor, fifth metal-oxide-semiconductor field effect transistor, sixth metal-oxide-semiconductor field effect transistor tubes, storage capacitors, and organic light-emitting diodes.

The gate of the first metal-oxide-semiconductor field effect transistor is connected to the first scanning signal, its source is connected to the data signal, its drain is electrically connected to the first node, and its substrate is connected to the ground signal; The gate of the second metal-oxide-semiconductor field effect transistor is connected to the second scanning signal, its source is connected to the reference voltage, its drain is electrically connected to the first node, and its substrate is connected to the ground signal; The gate of the third metal-oxide-semiconductor field effect transistor is electrically connected to the second node, its source is electrically connected to the first node, its drain is electrically connected to the third node, and its substrate is connected to the third node. ground signal; the gate of the fourth metal-oxide-semiconductor field effect transistor is connected to the first scanning signal, its source is electrically connected to the second node, its drain is electrically connected to the third node, and its The substrate is connected to the ground signal; the gate of the fifth metal-oxide-semiconductor field effect transistor is connected to the second scanning signal, its source is electrically connected to the third node, and its drain is electrically connected to the fourth node, the substrate of which is connected to the ground signal; the gate of the sixth metal-oxide-semiconductor field effect transistor is connected to the third scanning signal, its source is electrically connected to the third node, and its drain is connected to the power supply Positive voltage, its substrate is connected to the ground signal; one end of the storage capacitor is electrically connected to the second node, and the other end is connected to the ground signal; the anode of the organic light emitting diode is connected to the positive voltage of the power supply, and its cathode is electrically connected to the ground signal. Connect to the fourth node.

In the silicon-based OLED pixel circuit of the present invention, the first scanning signal, the second scanning signal, and the third scanning signal are all provided by an external timing controller.

In the silicon-based OLED pixel circuit of the present invention, the positive power voltage, the reference voltage, and the ground signal are all DC voltage signals.

In the silicon-based OLED pixel circuit of the present invention, the first metal-oxide-semiconductor field effect transistor, the second metal-oxide-semiconductor field effect transistor, the third metal-oxide-semiconductor field effect transistor, the first The four metal-oxide-semiconductor field effect transistors, the fifth metal-oxide-semiconductor field effect transistor, and the sixth metal-oxide-semiconductor field effect transistor are all N-type metal-oxide-semiconductor field effect transistors.

In the silicon-based OLED pixel circuit of the present invention, the first metal-oxide-semiconductor field effect transistor, the second metal-oxide-semiconductor field effect transistor, the fourth metal-oxide-semiconductor field effect transistor, the The five metal-oxide-semiconductor field effect transistors and the sixth metal-oxide-semiconductor field effect transistor are switching transistors, and the third metal-oxide-semiconductor field effect transistor is a driving transistor.

In the silicon-based OLED pixel circuit of the present invention, the combination of the first scan signal, the second scan signal, and the third scan signal corresponds to a data voltage preparation phase, a threshold voltage compensation phase, and a light emitting phase.

In the data voltage preparation phase, the first scan signal is set to high level, the second scan signal is set to low level, and the third scan signal is set to high level.

In the threshold voltage compensation phase, the first scan signal is set to high level, the second scan signal is set to low level, and the third scan signal is set to low level.

In the light-emitting phase, the first scan signal is set to low level, the second scan signal is set to high level, and the third scan signal is set to low level.

The invention also provides a method for compensating the threshold voltage drift of the driving tube for the silicon-based OLED pixel circuit. The specific steps are as follows:

Step 1. Provide the silicon-based OLED pixel circuit as above.

Step 2: Entering the data voltage preparation stage, the first scan signal is set to high level, the second scan signal is set to low level, and the third scan signal is set to high level. The first scanning signal, the second scanning signal and the third scanning signal control the first metal-oxide-semiconductor field effect transistor, the fourth metal-oxide-semiconductor field effect transistor and the sixth metal-oxide - the semiconductor field effect transistor is turned on, and controls the closing of the second metal-oxide-semiconductor field effect transistor and the fifth metal-oxide-semiconductor field effect transistor; the third metal-oxide-semiconductor field effect transistor The source voltage of the organic light emitting diode is equal to the data signal voltage, the drain voltage is equal to the positive voltage of the power supply, and the gate and the drain are short-circuited; the organic light emitting diode has no current flowing and does not emit light.

Step 3: Entering the threshold voltage compensation stage, the first scanning signal is set to high level, the second scanning signal is set to low level, and the third scanning signal is set to low level. The first scan signal, the second scan signal, and the third scan signal control the opening of the first metal-oxide-semiconductor field effect transistor and the fourth metal-oxide-semiconductor field effect transistor, and control the The second metal-oxide-semiconductor field effect transistor, the fifth metal-oxide-semiconductor field effect transistor and the sixth metal-oxide-semiconductor field effect transistor are turned off; the third metal-oxide-semiconductor field effect transistor The gate of the gate is discharged from the positive voltage of the power supply until the gate-drain voltage is its threshold voltage; the voltage value stored in the storage capacitor is the sum of the data voltage and the threshold voltage of the third metal-oxide-semiconductor field effect transistor ; The organic light emitting diode has no current flowing and does not emit light.

Step 4: Entering the light-emitting stage, the first scanning signal is set to low level, the second scanning signal is set to high level, and the third scanning signal is set to low level. The first scan signal, the second scan signal, and the third scan signal control the opening of the second metal-oxide-semiconductor field effect transistor and the fifth metal-oxide-semiconductor field effect transistor, and control the The first metal-oxide-semiconductor field effect transistor, the fourth metal-oxide-semiconductor field effect transistor and the sixth metal-oxide-semiconductor field effect transistor are turned off; the third metal-oxide-semiconductor field effect transistor Working in the saturation region, the influence of its threshold voltage shift on its leakage current is eliminated; the organic light-emitting diode emits light, and its light-emitting current is equal to the leakage current of the third metal-oxide-semiconductor field effect transistor.

The beneficial effects of the present invention are: different from the prior art, the silicon-based OLED pixel circuit of the present invention is composed of six metal-oxide-semiconductor field effect transistors, one storage capacitor and one organic light-emitting diode. The silicon-based OLED pixel circuit for compensating the threshold voltage drift of the drive tube of the present invention stores the threshold voltage and data voltage of the drive tube in the storage capacitor in the threshold voltage compensation stage, and makes the drive tube work in the saturation region, so that the work of the organic light emitting diode The current has nothing to do with the threshold voltage of the driving tube, thereby eliminating the influence of the threshold voltage drift of the driving tube on the operating current of the organic light-emitting diode, improving the brightness uniformity of the silicon-based OLED microdisplay, and improving the display effect of the microdisplay.

Description of drawings

Fig. 1 is the circuit diagram of the silicon-based OLED pixel circuit of existing 2T1C structure;

Fig. 2 is the circuit diagram of silicon-based OLED pixel circuit of the present invention;

FIG. 3 is a timing diagram of the silicon-based OLED pixel circuit of the present invention.

Detailed ways

In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

Please refer to FIG. 2 , the present invention provides a silicon-based OLED pixel circuit, the silicon-based OLED pixel circuit includes a first metal-oxide-semiconductor field effect transistor M1, a second metal-oxide-semiconductor field effect transistor M2, a second metal-oxide-semiconductor field effect transistor Three metal-oxide-semiconductor field effect transistors M3, fourth metal-oxide-semiconductor field effect transistors M4, fifth metal-oxide-semiconductor field effect transistors M5, sixth metal-oxide-semiconductor field effect transistors M6 , storage capacitor CS and organic light emitting diode OLED.

The gate of the first metal-oxide-semiconductor field effect transistor M1 is connected to the first scanning signal SCAN1, its source is connected to the data signal V _data , its drain is electrically connected to the first node N1, and its substrate is connected to ground signal gnd; the gate of the second metal-oxide-semiconductor field effect transistor M2 is connected to the second scan signal SCAN2, its source is connected to the reference voltage V _ref , its drain is electrically connected to the first node N1, and its The substrate access ground signal gnd; the gate of the third metal-oxide-semiconductor field effect transistor M3 is electrically connected to the second node N2, its source is electrically connected to the first node N1, and its drain is electrically connected to At the third node N3, its substrate is connected to the ground signal gnd; the gate of the fourth metal-oxide-semiconductor field effect transistor M4 is connected to the first scanning signal SCAN1, and its source is electrically connected to the second node N2, Its drain is electrically connected to the third node N3, and its substrate is connected to the ground signal gnd; the gate of the fifth metal-oxide-semiconductor field effect transistor M5 is connected to the second scanning signal SCAN2, and its source is electrically connected to At the third node N3, its drain is electrically connected to the fourth node N4, and its substrate is connected to the ground signal gnd; the gate of the sixth metal-oxide-semiconductor field effect transistor M6 is connected to the third scan signal CTRL, Its source is electrically connected to the third node N3, its drain is connected to the positive power supply voltage VDD, and its substrate is connected to the ground signal gnd; one end of the storage capacitor CS is electrically connected to the second node N2, and the other end is connected to Ground signal gnd; the anode of the organic light emitting diode OLED is connected to the positive power supply voltage VDD, and the cathode thereof is electrically connected to the fourth node N4.

Specifically, the first scan signal SCAN1 , the second scan signal SCAN2 , and the third scan signal CTRL are all provided by an external timing controller.

Specifically, the positive power voltage VDD, the reference voltage V _ref , and the ground signal gnd are all DC voltage signals.

Specifically, the first metal-oxide-semiconductor field effect transistor M1, the second metal-oxide-semiconductor field effect transistor M2, the third metal-oxide-semiconductor field effect transistor M3, the fourth metal-oxide-semiconductor field effect transistor The field effect transistor M4, the fifth metal-oxide-semiconductor field effect transistor M5, and the sixth metal-oxide-semiconductor field effect transistor M6 are all N-type metal-oxide-semiconductor field effect transistors.

Specifically, the first metal-oxide-semiconductor field effect transistor M1, the second metal-oxide-semiconductor field effect transistor M2, the fourth metal-oxide-semiconductor field effect transistor M4, the fifth metal-oxide-semiconductor field effect transistor The field effect transistor M5 and the sixth metal-oxide-semiconductor field effect transistor M6 are switching transistors, and the third metal-oxide-semiconductor field effect transistor M3 is a driving transistor.

FIG. 3 is a timing diagram of each scanning signal in the silicon-based OLED pixel circuit according to an embodiment of the present invention. Please refer to FIG. 2 and FIG. 3 at the same time. The combination of the first scan signal SCAN1, the second scan signal SCAN2, and the third scan signal CTRL in this embodiment corresponds to a data voltage preparation phase, a threshold voltage compensation phase, and a lighting phase. .

The working process of the silicon-based OLED pixel circuit of the present invention is as follows:

In the data voltage preparation stage, the first scan signal SCAN1 is set to high level, the second scan signal SCAN2 is set to low level, and the third scan signal CTRL is set to high level. At this time, the first metal-oxide-semiconductor field effect transistor M1, the fourth metal-oxide-semiconductor field effect transistor M4 and the sixth metal-oxide-semiconductor field effect transistor M6 are turned on, and the second metal-oxide-semiconductor field effect transistor M6 is turned on. The semiconductor field effect transistor M2 and the fifth metal-oxide-semiconductor field effect transistor M5 are turned off, the source voltage of the third metal-oxide-semiconductor field effect transistor M3 is equal to the data signal voltage V _data , and the drain voltage is equal to the positive voltage of the power supply. Voltage VDD, and its gate and drain are short-circuited, the organic light-emitting diode OLED has no current flow and does not emit light.

In the threshold voltage compensation phase, the first scan signal SCAN1 is set to high level, the second scan signal SCAN2 is set to low level, and the third scan signal CTRL is set to low level. At this time, the first metal-oxide-semiconductor field effect transistor M1 and the fourth metal-oxide-semiconductor field effect transistor M4 are turned on, the second metal-oxide-semiconductor field effect transistor M2, the fifth metal-oxide-semiconductor field effect transistor M2, and the fifth metal-oxide-semiconductor field effect transistor M4 are turned on. The semiconductor field effect transistor M5 and the sixth metal-oxide-semiconductor field effect transistor M6 are turned off; the gate of the third metal-oxide-semiconductor field effect transistor M3 is discharged from the positive power supply voltage VDD to its gate-drain voltage V _{gs_M3} as its When the threshold voltage V _{th_M3} ends, the gate voltage is V _{g_M3} =V _data +V _{th_M3} ; the voltage value stored in the storage capacitor CS is the data voltage V _data and the threshold voltage V of the third metal-oxide-semiconductor field effect transistor M3 The sum of _{th_M3} , that is, V _data +V _{th_M3} ; no current flows through the organic light emitting diode OLED, and no light is emitted.

In the light-emitting phase, the first scan signal SCAN1 is set to low level, the second scan signal SCAN2 is set to high level, and the third scan signal CTRL is set to low level. At this time, the second metal-oxide-semiconductor field effect transistor M2 and the fifth metal-oxide-semiconductor field effect transistor M5 are turned on, and the first metal-oxide-semiconductor field effect transistor M1 and the fourth metal-oxide-semiconductor field effect transistor M1 and the fourth metal-oxide-semiconductor field effect The semiconductor field effect transistor M4 and the sixth metal-oxide-semiconductor field effect transistor M6 are turned off; the third metal-oxide-semiconductor field effect transistor M3 works in the saturation region, its source voltage V _{s_M3} =V _ref , and its gate The voltage is V _{g_M3} =V _data +V _{th_M3} , and the leakage current is I _{d_M3} =k(V _{gs_M3} -V _{th_M3} ) ² =k(V _data +V _{th_M3} -V _ref -V _{th_M3} ) ²

=k(V _data -V _ref ) ² , where k is the current amplification factor of the third metal-oxide-semiconductor field effect transistor M3, the magnitude of the leakage current and the threshold voltage of the third metal-oxide-semiconductor field effect transistor M3 V _{th_M3} is irrelevant, eliminating the effect of its threshold voltage shift on its leakage current. The organic light emitting diode OLED emits light, and its light emitting current I _OLED is equal to the leakage current of the third metal-oxide-semiconductor field effect transistor M3 , ie I _OLED =I _{d — M3} .

Different from the situation in the prior art, the silicon-based OLED pixel circuit disclosed in this example stores the threshold voltage and data voltage of the driving tube in the storage capacitor in the threshold voltage compensation stage, and makes the driving tube work in the saturation region, so that organic light emitting The operating current of the diode has nothing to do with the threshold voltage of the driving tube, thereby eliminating the influence of the drift of the threshold voltage of the driving tube on the operating current of the organic light-emitting diode, improving the brightness uniformity of the silicon-based OLED microdisplay, and improving the display effect of the microdisplay.

Please refer to Fig. 2 and Fig. 3, the present invention also provides a method for compensating the drift of the threshold voltage of the driving tube by the silicon-based OLED pixel circuit, the specific steps are as follows:

Step 1. Provide the silicon-based OLED pixel circuit as above.

Step 2, enter the data voltage preparation stage, set the first scanning signal SCAN1 to high level, set the second scanning signal SCAN2 to low level, and set the third scanning signal CTRL to high level. At this time, the first metal-oxide-semiconductor field effect transistor M1, the fourth metal-oxide-semiconductor field effect transistor M4 and the sixth metal-oxide-semiconductor field effect transistor M6 are turned on, and the second metal-oxide-semiconductor field effect transistor M6 is turned on. The semiconductor field effect transistor M2 and the fifth metal-oxide-semiconductor field effect transistor M5 are turned off; the source voltage of the third metal-oxide-semiconductor field effect transistor M3 is equal to the data signal voltage V _data , and its drain voltage is equal to the positive voltage of the power supply Voltage VDD, and its gate and drain are short-circuited; the organic light-emitting diode OLED has no current flow and does not emit light.

Step 3: Enter the threshold voltage compensation stage, set the first scanning signal SCAN1 to high level, set the second scanning signal SCAN2 to low level, and set the third scanning signal CTRL to low level. At this time, the first metal-oxide-semiconductor field effect transistor M1 and the fourth metal-oxide-semiconductor field effect transistor M4 are turned on, the second metal-oxide-semiconductor field effect transistor M2, the fifth metal-oxide-semiconductor field effect transistor M2, and the fifth metal-oxide-semiconductor field effect transistor M4 are turned on. The semiconductor field effect transistor M5 and the sixth metal-oxide-semiconductor field effect transistor M6 are turned off; the gate of the third metal-oxide-semiconductor field effect transistor M3 is discharged from the positive power supply voltage VDD to its gate-drain voltage V _{gs_M3} as its When the threshold voltage V _{th_M3} ends, the gate voltage is V _{g_M3} =V _data +V _{th_M3} ; the voltage value stored in the storage capacitor CS is the data voltage V _data and the threshold voltage V of the third metal-oxide-semiconductor field effect transistor M3 The sum of _{th_M3} , that is, V _data +V _{th_M3} ; no current flows through the organic light emitting diode OLED, and no light is emitted.

Step 4, enter the light-emitting stage, set the first scan signal SCAN1 to low level, and set the second scan signal

SCAN2 is set to high level, and the third scanning signal CTRL is set to low level. At this time, the second metal-oxide-semiconductor field effect transistor M2 and the fifth metal-oxide-semiconductor field effect transistor M5 are turned on, and the first metal-oxide-semiconductor field effect transistor M1 and the fourth metal-oxide-semiconductor field effect transistor M1 and the fourth metal-oxide-semiconductor field effect The semiconductor field effect transistor M4 and the sixth metal-oxide-semiconductor field effect transistor M6 are turned off; the third metal-oxide-semiconductor field effect transistor M3 works in the saturation region, and its source voltage V _{s_M3} =V _ref , gate voltage V _{g_M3} =V _data +V _{th_M3} , leakage current I _{d_M3} =k(V _{gs_M3} -V _{th_M3} ) ² =k(V _data +V _{th_M3} -V _ref -V _{th_M3} ) ² =k(V _data -V _ref ) ² , where k is the current amplification factor of the third metal-oxide-semiconductor field effect transistor M3, the size of the leakage current has nothing to do with the threshold voltage V _{th_M3} of the third metal-oxide-semiconductor field effect transistor M3, and the threshold voltage bias of the third metal-oxide-semiconductor field effect transistor M3 is eliminated The effect of shifting on its leakage current. The organic light emitting diode OLED emits light, and its light emitting current I _OLED is equal to the leakage current of the third metal-oxide-semiconductor field effect transistor M3 , ie I _OLED =I _{d — M3} .

Different from the situation in the prior art, this example discloses a silicon-based OLED pixel circuit that compensates the drift of the threshold voltage of the drive tube. In the threshold voltage compensation stage, the threshold voltage and data voltage of the drive tube are stored in the storage capacitor, and the drive The tube works in the saturation region, so that the working current of the organic light-emitting diode has nothing to do with the threshold voltage of the driving tube, thereby eliminating the influence of the threshold voltage drift of the driving tube on the working current of the organic light-emitting diode, and improving the brightness uniformity of the silicon-based OLED microdisplay. Improve the display effect of the microdisplay.

In summary, although the present invention has been disclosed above with preferred embodiments, the above preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope defined in the claims.

Claims (8)

1. A silicon-based OLED pixel circuit for compensating the threshold voltage drift of the driving tube, characterized in that it comprises a first metal-oxide-semiconductor field effect transistor, a second metal-oxide-semiconductor field effect transistor, a third metal-oxide-semiconductor field-effect transistor, Oxide-semiconductor field effect transistor, fourth metal-oxide-semiconductor field effect transistor, fifth metal-oxide-semiconductor field effect transistor, sixth metal-oxide-semiconductor field effect transistor, storage capacitor and organic light-emitting diode ; Wherein, the gate of the first metal-oxide-semiconductor field effect transistor is connected to the first scan signal, its source is connected to the data signal, its drain is electrically connected to the first node, and its substrate is connected to the ground signal; the gate of the second metal-oxide-semiconductor field effect transistor is connected to the second scanning signal, its source is connected to the reference voltage, its drain is electrically connected to the first node, and its substrate is connected to the ground signal; the gate of the third metal-oxide-semiconductor field effect transistor is electrically connected to the second node, its source is electrically connected to the first node, its drain is electrically connected to the third node, and its substrate The bottom is connected to the ground signal; the gate of the fourth metal-oxide-semiconductor field effect transistor is connected to the first scanning signal, its source is electrically connected to the second node, and its drain is electrically connected to the third node , the substrate of which is connected to the ground signal; the gate of the fifth metal-oxide-semiconductor field effect transistor is connected to the second scanning signal, its source is electrically connected to the third node, and its drain is electrically connected to The fourth node, whose substrate is connected to the ground signal; the gate of the sixth metal-oxide-semiconductor field effect transistor is connected to the third scanning signal, its source is electrically connected to the third node, and its drain is connected to The positive voltage of the power supply is input, and the substrate is connected to the ground signal; one end of the storage capacitor is electrically connected to the second node, and the other end is connected to the ground signal; the anode of the organic light-emitting diode is connected to the positive voltage of the power supply, and its cathode Electrically connected to the fourth node. 2. The silicon-based OLED pixel circuit for compensating the threshold voltage drift of the driving tube according to claim 1, wherein the first scanning signal, the second scanning signal, and the third scanning signal are all controlled by an external timing controller supply. 3 . The silicon-based OLED pixel circuit for compensating the drift of the threshold voltage of the driving tube according to claim 1 , wherein the positive power voltage, the reference voltage and the ground signal are all DC voltage signals. 4 . 4. The silicon-based OLED pixel circuit for compensating the threshold voltage drift of the driving tube according to claim 1, wherein the first metal-oxide-semiconductor field effect transistor, the second metal-oxide-semiconductor Field effect transistor, third metal-oxide-semiconductor field effect transistor, fourth metal-oxide-semiconductor field effect transistor, fifth metal-oxide-semiconductor field effect transistor, sixth metal-oxide-semiconductor field effect transistor The tubes are all N-type metal-oxide-semiconductor field effect transistors. 5. The silicon-based OLED pixel circuit for compensating the threshold voltage drift of the driving tube according to claim 1, wherein the first metal-oxide-semiconductor field effect transistor, the second metal-oxide-semiconductor The field effect transistor, the fourth metal-oxide-semiconductor field effect transistor, the fifth metal-oxide-semiconductor field effect transistor, and the sixth metal-oxide-semiconductor field effect transistor are switch tubes, and the third metal-oxide The object-semiconductor field effect transistor is the driving tube. 6. The silicon-based OLED pixel circuit for compensating the threshold voltage drift of the drive tube according to claim 1, wherein the combination of the first scanning signal, the second scanning signal, and the third scanning signal successively corresponds to a A data voltage preparation phase, a threshold voltage compensation phase, and a light emitting phase. 7. The silicon-based OLED pixel circuit for compensating the threshold voltage drift of the driving tube according to claim 6, wherein, in the data voltage preparation stage, the first scanning signal is set to a high level, and the The second scanning signal is set to low level, and the third scanning signal is set to high level; In the threshold voltage compensation stage, the first scan signal is set to high level, the second scan signal is set to low level, and the third scan signal is set to low level; In the light-emitting phase, the first scan signal is set to low level, the second scan signal is set to high level, and the third scan signal is set to low level. 8. A method for compensating drive tube threshold voltage drift, is characterized in that, comprises the steps: Step 1, providing a silicon-based OLED pixel circuit for compensating the drift of the threshold voltage of the driving tube according to any one of claims 1-7; Step 2, enter the data voltage preparation stage, the first scan signal is set to high level, the second scan signal The signal is set to low level, and the third scanning signal is set to high level; Step 3, enter the threshold voltage compensation stage, the first scanning signal is set to high level, the second scanning signal The signal is set to low level, and the third scanning signal is set to low level; Step 4, enter the light-emitting stage, the first scanning signal is set to low level, and the second scanning signal is set to high level, the third scanning signal is set to low level.