CN108315722A - A kind of arc-shaped electrode plasma enhanced chemical vapor deposition unit - Google Patents

Abstract

The invention provides an arc-shaped electrode plasma chemical vapor deposition device, which can avoid relative sliding between cables and electrodes between plates, and eliminate scratch defects. The unwinding chamber, the coating chamber and the winding chamber of the device are connected to form a vacuum cavity, and the vacuum pump is connected to the vacuum cavity to form an air extraction system; the winding mechanism is connected to the correction mechanism, and the circular electrode and the The arc-shaped electrode is installed in the coating chamber, and the base material is close to the surface of the round electrode and rotates synchronously with the round electrode; the air supply unit and the RF power source are connected to the arc-shaped electrode, and the air supply unit sends the working gas into the round electrode and the arc-shaped electrode Between them, under the action of the radio frequency power source, plasma is generated between the circular electrode and the arc electrode, the base film is close to the circular electrode, and the movement of the base film is controlled by the winding mechanism and the deviation correction mechanism. The coating is deposited on the film.

Description

A plasma-enhanced chemical vapor deposition device with arc-shaped electrodes

technical field

The invention relates to an arc-shaped electrode plasma chemical vapor deposition (PECVD) device, which belongs to the technical field of surface engineering. The invention can be used to prepare siloxane coatings on various base materials, which are used for atomic oxygen protection of surface materials of low-orbit spacecraft and high-barrier coatings of civilian products.

Background technique

Plasma-enhanced chemical vapor deposition (PECVD) technology is one of the methods of plasma-assisted chemical vapor deposition (CVD), and is widely used to obtain low-temperature thin films with good properties. Parallel plate electrodes are usually used, and high-frequency voltage is applied to the two poles in the low-voltage container to generate radio-frequency discharge to form plasma. The radio-frequency power supply adopts capacitive or inductive coupling. In industrial applications, a higher deposition rate is usually required to ensure the uniformity of the film on a large-area substrate. The uniformity of the film includes the uniform distribution of the film thickness and the uniformity of the film performance. The main problems of the currently used equipment when plating large-area thin films are: 1) The uneven distribution of radio frequency current at the edge of the plasma electrode causes the uneven distribution of plasma potential and power density. 2) When the size of the plasma or the substrate is much larger than the wavelength, the standing wave effect causes the uneven distribution of the plasma. 3) Due to the fluidity of the plasma and the non-uniformity of the electric field distribution during the gas injection process, the non-uniformity of the film thickness and structure is caused. 4) During the continuous coating process, the flat electrode is easy to scratch the substrate material.

In order to obtain high-quality films, it depends on the optimization of various equipment and process conditions. Including: the matching and optimization of chamber structure, electrode shape, distance between electrodes, gas flow distribution, electric field distribution, plasma power supply operating parameters, etc. These parameters affect the number of defects, adhesion, compactness, uniformity and other properties of the deposited coating.

With the increasing demand for coiled PECVD coatings, parallel flat-plate plasma-enhanced chemical vapor deposition equipment has exposed many technical defects, such as: uneven electric field distribution, scratches on the base film on the upper and lower electrodes, difficult control of coating temperature, etc., which can no longer meet the high requirements. Demand for quality PECVD coatings. The cable between solar cell arrays for space is made of copper foil with a thickness of 0.28mm and polyimide with a thickness of 25um. It is a semi-rigid structure with a width of about 0.25m and a length of 40m. If parallel plate PECVD coating equipment is used, during the coating process, the electrodes are likely to scratch the polyimide material on the surface of the cable between the plates, resulting in low quality of the coated film.

Contents of the invention

The invention provides an arc-shaped electrode plasma chemical vapor deposition device, which can avoid relative sliding between cables and electrodes between plates, and eliminate scratch defects.

An arc-shaped electrode plasma chemical vapor deposition device is characterized in that the device consists of an unwinding chamber, a winding mechanism, an ion source, a circular electrode, a coating chamber, a winding chamber, a deviation-correcting mechanism, a vacuum system, and an arc-shaped electrode , an air supply unit, and a radio frequency power source;

Among them, the three chambers of the unwinding chamber, the coating chamber and the winding chamber are connected to form a vacuum chamber, and the vacuum pump is connected to the vacuum chamber to form an air extraction system; the winding mechanism is connected to the deviation correction mechanism, and the circular electrode and arc The shaped electrode is installed in the coating chamber, the base material is close to the surface of the round electrode and rotates synchronously with the round electrode; the air supply unit sends the working gas between the round electrode and the arc electrode, and under the action of the radio frequency power source, the The plasma is generated between the shaped electrode and the arc-shaped electrode, the base film is close to the circular electrode, the movement of the base film is controlled by the winding mechanism and the deviation correction mechanism, and the coating is deposited on the base film.

The winding mechanism is composed of an unwinding shaft and a winding shaft to realize the winding of the base material.

A plasma chemical vapor deposition method for arc-shaped electrodes, the working gas is sent into between the circular electrode and the arc-shaped electrode in the coating chamber through the gas supply unit, and the vacuum degree between the circular electrode and the arc-shaped electrode is reduced by the vacuum unit Maintain the vacuum degree required by the process; when the RF power is turned on, under the action of the RF electric field, plasma is generated between the circular electrode and the arc electrode, and the working gas is dissociated into active groups, which are controlled by the winding mechanism and the correction mechanism The operating speed and tension of the base material, the active groups are deposited on the base material to form the required film layer, and realize the coil coating on the semi-rigid base material.

Beneficial effects of the present invention:

1. In the present invention, because the discharge electrode adopts a circular and arc-shaped structure, and the circular electrode rotates at a certain speed, the base material is close to the circular electrode and rotates synchronously with the circular electrode, thereby avoiding the relative contact between the base material and the electrode. Sliding, eliminates the scratch defect caused by the electrode to the base material, and effectively improves the quality of the film layer.

2. Since the base material of the present invention is close to the circular electrode, the purpose of controlling the temperature of the base material can be achieved by controlling the temperature of the circular electrode, so that the temperature parameters of the coating film can be precisely controlled, and the purpose of improving the quality of the film layer can be achieved.

3. The present invention consists of a three-chamber vacuum chamber consisting of an unwinding chamber, a coating chamber and a winding chamber. The vacuum system is evacuated to the vacuum of the coating, and plasma is only generated in the discharge chamber, which can avoid the pollution of other chambers.

Description of drawings

Fig. 1 Schematic diagram of PECVD coating equipment structure.

Detailed ways

The present invention will be further described below in conjunction with the accompanying drawings.

As shown in Figure 1, the present invention adopts arc-shaped electrode PECVD coating equipment, which is characterized in that it consists of an unwinding chamber 1, a winding mechanism 2, an ion source 3, a circular electrode 4, a coating chamber 5, a winding chamber 6, and a deviation correction chamber. Mechanism 7, vacuum system 8, arc electrode 9, air supply unit 10, radio frequency power source 11.

Wherein: the unwinding chamber 1, the coating chamber 5, and the winding chamber 6 are connected to form a vacuum cavity, and the vacuum pump is connected to the vacuum cavity to form an air extraction system; the winding mechanism 2 is connected to the deviation correction mechanism 7, The winding mechanism 2 is composed of an unwinding shaft and a winding shaft to realize the winding of the base material; the circular electrode 4 and the arc electrode 9 are installed in the coating chamber 5, and the inside of the circular electrode is filled with a liquid medium for temperature control. Air holes with a diameter of less than 1mm are arranged on the surface of the shaped electrode, and the hole spacing is not less than 30mm. At the same time, the surface of the arc-shaped electrode is treated with electric field shielding, so that the discharge electric field is limited between the round electrode and the arc-shaped electrode, and the base material is close to the round electrode 4 The surface rotates synchronously with the circular electrode 4; the gas supply unit 10 sends the working gas between the circular electrode 4 and the arc electrode 9, and under the action of the radio frequency power source 11, plasma is generated to obtain the required film layer. The gas supply unit 10 sends the working gas into the vacuum chamber, turns on the radio frequency power source 3, and generates plasma between the circular electrode 4 and the arc electrode 9, and the base film is closely attached to the circular electrode 4, and is passed through the winding mechanism 2 and the arc electrode 9. The deviation correction mechanism 7 controls the movement of the base film, deposits a coating with a required thickness on the base film, and at the same time prevents the electrode from scratching the base material and improves the coating quality.

A plasma chemical vapor deposition method for arc-shaped electrodes, the working gas is sent between the circular electrodes and the arc-shaped electrodes through the gas supply unit, and the vacuum degree between the circular electrodes and the arc-shaped electrodes is maintained by the vacuum unit to meet the process requirements Vacuum degree; when the radio frequency power supply is turned on, under the action of the radio frequency electric field, plasma is generated between the circular electrode and the arc electrode, and the working gas is dissociated into active groups, which are deposited on the base material to form The required film layer; while the winding mechanism and the correction mechanism control the running speed and tension of the base material, so as to realize the winding of the coating on the semi-rigid base material.

During the deposition process, hexamethyldisiloxane (monomer) and oxygen were used as working gases. The air supply unit sends the monomer and oxygen into the circular electrode and the arc electrode, and under the action of the radio frequency power supply, the chemical bond between hexamethyldisiloxane and oxygen is broken to generate plasma and form a variety of silicon-containing active materials. group. These active groups are deposited on the surface of the inter-board cable to obtain a dense siloxane film.

The result is as follows:

Preparation process of siloxane coating on table 1 polyimide film

Table 2 film thickness test results

Claims (6)

1. a kind of arc-shaped electrode plasma CVD device, which is characterized in that the device is by unreeling room, up- coiler Structure, ion source, circular electrode, coating chamber wind room, deviation correction mechanism, vacuum system, arc-shaped electrode, unit of supplying gas, radio-frequency power Source forms；

Wherein, unreel room, coating chamber, the winding chamber of room three are connected, form vacuum cavity, vacuum pump and the vacuum cavity phase Even, extract system is formed；Winding mechanism is connected with deviation correction mechanism, and circular electrode and arc-shaped electrode are mounted in coating chamber, substrate Material is close to circular electrode surface and is rotated synchronously with circular electrode；Working gas is sent into circular electrode and arc by unit of supplying gas Between electrode, under the action of radio frequency power source, plasma is generated between circular electrode and arc-shaped electrode, basement membrane is tightly attached to On circular electrode, the movement of basement membrane, the depositing coating on basement membrane are controlled by winding mechanism and deviation correction mechanism.

2. a kind of arc-shaped electrode plasma CVD device as described in claim 1, which is characterized in that the volume It is made of unreeling shaft and Scroll around mechanism, realizes the winding of base material.

3. a kind of arc-shaped electrode plasma CVD device as claimed in claim 1 or 2, which is characterized in that institute It states and is passed through liquid medium inside circular electrode, can be controlled into trip temperature.

4. a kind of arc-shaped electrode plasma CVD device as claimed in claim 1 or 2, which is characterized in that institute It states arc-shaped electrode surface and lays diameter 1mm stomatas below, pitch of holes is not less than 30mm.

5. a kind of arc-shaped electrode plasma CVD device as claimed in claim 4, which is characterized in that the arc Shape electrode appearance carries out electric field shielding processing, and discharge electric field is made to be limited between circular electrode and arc-shaped electrode.

6. a kind of arc-shaped electrode plasma activated chemical vapour deposition method, which is characterized in that by unit of supplying gas by working gas It is sent between circular electrode and arc-shaped electrode in coating chamber, and by vacuum unit by the vacuum between circular electrode and arc-shaped electrode Degree maintains the vacuum degree of technological requirement；After opening radio-frequency power supply, under the action of rf electric field, circular electrode and arc-shaped electrode Between generate plasma, working gas is dissociated into active group, passes through winding mechanism and deviation correction mechanism and controls base material The speed of service and tension, the active group be deposited on base material, form the film layer of needs, realize in semi-rigid substrate Winding film plating on material.