CN108281556A - OLED device and its manufacturing method and display device - Google Patents
OLED device and its manufacturing method and display device Download PDFInfo
- Publication number
- CN108281556A CN108281556A CN201710007623.5A CN201710007623A CN108281556A CN 108281556 A CN108281556 A CN 108281556A CN 201710007623 A CN201710007623 A CN 201710007623A CN 108281556 A CN108281556 A CN 108281556A
- Authority
- CN
- China
- Prior art keywords
- electron injecting
- injecting layer
- oled device
- layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000012044 organic layer Substances 0.000 claims abstract description 24
- 239000007769 metal material Substances 0.000 claims abstract description 22
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 239000011777 magnesium Substances 0.000 claims description 23
- 229910052749 magnesium Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 8
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 239000011521 glass Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of OLED device and its manufacturing method and display device, the OLED device includes：Substrate and anode, organic layer and cathode on the substrate are set gradually, further includes electron injecting layer, between the organic layer and cathode；The anode is made with cathode of ITO, the electron injecting layer is made of metal material, the metal material is the alloy of active metal or active metal and inert metal, while improving light transmittance, avoid ITO work content it is higher caused by high voltage so that OLED device meets the needs of voltage and light transmittance simultaneously.
Description
Technical field
The present invention relates to flat display fields, and in particular to a kind of OLED device and its manufacturing method and display device.
Background technology
Organic electroluminescent LED (organic light emitting diode, OLED) is divided into according to light extraction mode
Bottom emitting OLED and top emitting OLED and transparent OLED.The light sent out inside bottom emitting OLED in succession pass through transparent anode, thoroughly
Bright substrate projects.The display screen made in this way will be produced on transparent substrate simultaneously due to driving circuit and display area
On, cause display area area is opposite to reduce, the aperture opening ratio of display screen reduces.
Compared with bottom emitting OLED, top emitting OLED since the design feature of itself, light can be projected from top electrodes, by
It is produced on the lower section of display area in pixel-driving circuit, bus etc. so that the aperture opening ratio of device greatly improves, and then realizes aobvious
The high-resolution of display screen.It, can also be to OLED display screen simultaneously by using microcavity effect present in top emitting OLED structure
Display colour gamut improved, improve display effect.
There are larger difference, the light generated in transparent OLED can be respectively from substrate lower section and substrate with both above OLED
Top is launched, and external ambient light can also penetrate transparent OLED, therefore transparent OLED can have many special applications.
The Major Difficulties of top emitting OLED and transparent OLED are to need to select suitable cathode material, should be had lower
Work function obtains preferable light transmittance, and have lower resistance again to ensure that effective charge injects.Common cathode material
Material such as aluminium (Al), magnesium silver alloy (Mg-Ag), silver-colored (Ag) just there is good light to penetrate only under very thin thickness
Property, but when metal layer is very thin, the problem of breaking or metal is easy oxidation is usually had, effective ohm cannot be formed and connect
It touches, being easy to be formed defect on interface causes the loss of charge injection process to increase.
Transparent conductive material is selected in the prior art, if tin indium oxide (indium tin oxides, ITO) etc. is as cloudy
Light transmittance is improved to prepare transparent OLED or top emitting OLED in pole with this, but as cathode, the work content of transparent conductive material compared with
Height, very high voltage can be led to by directly being contacted with organic layer, therefore how to be reduced the type device voltage and do not reduced light transmission
Rate becomes a technical barrier.
Invention content
The purpose of the present invention is to provide a kind of OLED device and its manufacturing methods and display device, reduce cathode voltage
While do not reduce light transmittance.
To achieve the above object, the present invention provides a kind of OLED device, including substrate and is successively set on the substrate
On anode, organic layer and cathode, further include electron injecting layer, between the organic layer and cathode；The cathode is by saturating
Bright conductive material is made, and the electron injecting layer is made of metal material, and the metal material is active metal or active metal
With the alloy of inert metal.
Optionally, the transparent conductive material is ITO, and the electron injecting layer is the alloy of magnesium and silver.
Optionally, the thickness of the electron injecting layer is 1nm~5nm；The mass ratio of magnesium and silver in the electron injecting layer
It is 1:1~10:1.
Optionally, the thickness of the electron injecting layer is 2nm；The mass ratio of magnesium and silver is 4 in the electron injecting layer:1.
Correspondingly, the present invention also provides a kind of organic light-emitting display device, including above-mentioned OLED device.
Correspondingly, the present invention also provides a kind of manufacturing methods of OLED device, including：
One substrate is provided, forms anode and organic layer on the substrate；
Electron injecting layer is formed on the organic layer, the electron injecting layer is made of metal material, the metal material
Material is the alloy of active metal or active metal and inert metal；
Transparent cathode is formed on the electron injecting layer.
Optionally, the transparent cathode is ITO, and the electron injecting layer is the alloy of magnesium and silver.
Optionally, the electron injecting layer is formed on the organic layer by the method for vapor deposition；Pass through the method for sputtering
Form the transparent cathode.
Optionally, the thickness of the electron injecting layer is 1nm~5nm；The mass ratio of magnesium and silver in the electron injecting layer
It is 1:1~10:1.
Optionally, the thickness of the electron injecting layer is 2nm；The mass ratio of magnesium and silver is 4 in the electron injecting layer:1
Compared with prior art, the advantageous effect of OLED device and its manufacturing method and display device provided by the invention
It is as follows：
Using ITO as cathode, electron injecting layer is set between organic layer and cathode layer, is made of metal material electricity
Sub- implanted layer, the metal material is the alloy of active metal or active metal and inert metal, while improving light transmittance,
Avoid transparent conductive material work content it is higher caused by high voltage so that OLED device meets the need of voltage and light transmittance simultaneously
It asks.
Description of the drawings
Fig. 1 is the structural schematic diagram for the OLED device that one embodiment of the invention provides.
Fig. 2 is the flow diagram of the manufacturing method for the OLED device that one embodiment of the invention provides.
Specific implementation mode
To keep present disclosure more clear and easy to understand, below in conjunction with Figure of description, present disclosure is done into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, and general replacement well known to the skilled artisan in the art is also contained
Lid is within the scope of the present invention.
Secondly, the present invention has carried out detailed statement using schematic diagram, when present example is described in detail, for the ease of saying
Bright, schematic diagram is not partially enlarged in proportion to the general scale, should not be to this restriction as the present invention.
Core of the invention thought is, using ITO as cathode, electron injection is arranged between organic layer and cathode layer
Layer, is made of metal material electron injecting layer, and the metal material is the conjunction of active metal or active metal and inert metal
Gold, while improving light transmittance, avoid ITO work content it is higher caused by high voltage so that OLED device meets electricity simultaneously
The demand of pressure and light transmittance.
Referring to FIG. 1, the structural schematic diagram of its OLED device provided for one embodiment of the invention.As shown in Figure 1, described
OLED device includes substrate 10 and sets gradually anode 11, organic layer 12 and cathode 13 on the substrate.The OLED
Device further includes electron injecting layer 14, between the organic layer 12 and cathode 13；The cathode 13 is by transparent conductive material
It is made, 11 material of the anode can also be made of transparent conductive material, and the electron injecting layer 14 is made of metal material, institute
State the alloy that metal material is active metal or active metal and inert metal.
The transparent conductive material is to have 80% or more light transmittance in visible-range, and electric conductivity is high, than
Resistance value is less than 1 × 10-3The material of Ω cm.
The active metal judges that the metal activity i.e. metal is in chemistry with inert metal according to the activity of metal
The arrangement foundation of active degree in reaction, metal activity mainly has at 4 points：The severe degree reacted with oxygen；It is reacted with acid
Severe degree；Whether the metal can cement out other metals from the solution of its compound；Whether can displace hydrochloric acid,
Hydrogen in dilute sulfuric acid.Metal is ranked up according to above 4 points, because hydrogen ion can embody metallic element in displacement is reacted
The characteristics of, so being also discharged into metal activity table, using hydrogen as standard, the metal come before hydrogen is active metal, comes hydrogen
Subsequent metal is inert metal.In the present invention, the metal material for making the electron injecting layer 14 is active metal or active
The alloy of metal and inert metal, such as can be the alloy or ytterbium and silver-colored alloy of magnesium and silver, in the present embodiment, the metal
Material is the alloy of magnesium and silver.
In the present embodiment, the thickness of the electron injecting layer 14 is 1nm~5nm；Such as 1nm, 2nm, 3nm, 4nm or 5nm,
Preferably, the thickness of the electron injecting layer 14 is 2nm.Magnesium (Mg) and the mass ratio of silver-colored (Ag) are in the electron injecting layer 14
1:1~10:1, such as 2:1、4:1、6:1、8:1 or 10:1, it is preferred that magnesium (Mg) and silver-colored (Ag) in the electron injecting layer 14
Mass ratio is 4:1.
When the mass ratio that the thickness of the electron injecting layer 14 is 2nm, Mg and Ag is 4:When 1, the conjunction with no magnesium and silver
The device that electron injecting layer is made in golden material is compared, and voltage drops to 4.63V, light transmittance 74.82% from 10V.When adjusting institute
When stating the thickness of electron injecting layer 14 to 3nm, voltage 4.52V, light transmittance 64.95%；When the adjusting electron injecting layer
When 14 thickness is to 4nm, voltage 4.39V, light transmittance 64.80%.
For OLED display screen, driving voltage is usually required that in 5V or less.For one piece 5 inches of OLED display screen, work
Input current is about 200mA when making, and the voltage difference of 0.24V is away from the power consumption that can only cause 48mW, therefore voltage is 4.63V when 2nm
It can ignore with the power consumption difference of voltage 4.39V when 4nm.But for light transmittance, some OLED application field industries have higher
It is required that《Motor vehicle safe and technical specification》Wherein Sub_clause 11 provides：Automobile driving cabin must assure that field of front vision and side
Glass does not allow to be less than for the visible transmission ratio at driver's vision area position other than the square visual field, windscreen and air regulator
70%.When replacing simple glass using transparent OLED device, light transmittance otherwise be less than 70%, 2nm and 4nm thickness pair at this time
The influence of light transmittance be can not ignore.Therefore the thickness range of the electron injecting layer 14 requires between 1nm~5nm, preferably
2nm。
Correspondingly, the present invention also provides a kind of organic light-emitting display device, including above-mentioned OLED device.
Correspondingly, the present invention also provides a kind of manufacturing methods of OLED device, for manufacturing above-mentioned OLED device.It please join
Fig. 2 is examined, is the flow diagram of the manufacturing method for the OLED device that one embodiment of the invention provides.As shown in Fig. 2, described
The manufacturing method of OLED device includes：
Step S01：One substrate is provided, forms anode and organic layer on the substrate；
Step S02：Electron injecting layer is formed on the organic layer, the electron injecting layer is made of metal material, institute
State the alloy that metal material is active metal or active metal and inert metal；
Step S03：Transparent cathode is formed on the electron injecting layer.
Shown in please referring to Fig.2, and Fig. 1 is combined, the manufacturing method for the OLED device that the present invention will be described in detail：
In step S01, a substrate 10 is provided, the substrate 10 is transparent substrate, for example, the substrate 10 can be glass
Glass substrate.In other embodiments, the substrate 10 is not limited to glass substrate, can also be known to those skilled in the art
Other materials.
Then anode 11 is formed on the substrate 10, and in the present embodiment, the method for sputtering may be used in the substrate
Anode is formed on 10, in other embodiments, can also form the sun using other methods well known by persons skilled in the art
Pole 11.Then organic layer 12 is formed on the anode 11.
In step S02, electron injecting layer 14 is formed on the organic layer 12, the electron injecting layer 14 is by magnesium and silver
Alloy material be made.In the present embodiment, the electron injection is formed on the organic layer 12 by using the method for vapor deposition
Layer 14, such as magnesium is carried out at the same time with silver and is vaporized on the alloy for forming magnesium and silver on the organic layer 12.
In the present embodiment, the thickness of the electron injecting layer 14 is 1nm~5nm；Such as 1nm, 2nm, 3nm, 4nm or 5nm,
Preferably, the thickness of the electron injecting layer 14 is 2nm.Magnesium (Mg) and the mass ratio of silver-colored (Ag) are in the electron injecting layer 14
1:1~10:1, such as 2:1、4:1、6:1、8:1 or 10:1, it is preferred that magnesium (Mg) and silver-colored (Ag) in the electron injecting layer 14
Mass ratio is 4:1.
When the mass ratio that the thickness of the electron injecting layer 14 is 2nm, Mg and Ag is 4:When 1, compared to no magnesium and silver
The device of electron injecting layer is made in alloy material, and voltage drops to 4.63V, light transmittance 74.82% from 10V.Described in adjusting
When the thickness of electron injecting layer 14 is to 3nm, voltage 4.52V, light transmittance 64.95%；When adjusting the electron injecting layer 14
Thickness to 4nm when, voltage 4.39V, light transmittance 64.80%.
For OLED display screen, driving voltage is usually required that in 5V or less.For one piece 5 inches of OLED display screen, work
Input current is about 200mA when making, and the voltage difference of 0.24V is away from the power consumption that can only cause 48mW, therefore voltage is 4.63V when 2nm
It can ignore with the power consumption difference of voltage 4.39V when 4nm.But for light transmittance, some OLED application field industries have higher
It is required that《Motor vehicle safe and technical specification》Wherein Sub_clause 11 provides：Automobile driving cabin must assure that field of front vision and side
Glass does not allow to be less than for the visible transmission ratio at driver's vision area position other than the square visual field, windscreen and air regulator
70%.When replacing simple glass using transparent OLED device, light transmittance otherwise be less than 70%, 2nm and 4nm thickness pair at this time
The influence of light transmittance be can not ignore.Therefore the thickness range of the electron injecting layer 14 requires between 1nm~5nm, preferably
2nm。
In step S03, transparent cathode 13 is formed on the electron injecting layer 14.In the present embodiment, transparent cathode
13 materials are transparent conductive material, such as can be ITO, ICO, SnO2Deng the method for sputtering may be used in the electron injection
The transparent cathode 13 is formed on layer 14, in other embodiments, its other party well known by persons skilled in the art can also be used
Method forms the ITO cathodes 13.
It is understood that further including in the present invention：Further include on the substrate 10 before forming the anode
Back plane circuitry is formed, and is formed after the transparent cathode 13, passes through envelope on one side by what substrate 10 was formed with transparent cathode 13
Package material and a glass cover-plate fit, and due to belonging to the prior art, details are not described herein.
In conclusion transparent OLED device provided by the invention and its manufacturing method and display device, may be used ITO
As anode and cathode, electron injecting layer is set between organic layer and cathode layer, is made of metal material electron injecting layer,
The metal material avoids for the alloy of active metal or active metal and inert metal while improving light transmittance
High voltage caused by the work content of bright conductive material is higher so that OLED device meets the needs of voltage and light transmittance simultaneously.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (10)
1. a kind of OLED device, including substrate and anode, organic layer and cathode on the substrate are set gradually, feature
It is, further includes electron injecting layer, between the organic layer and cathode；The cathode is made of transparent conductive material, institute
It states electron injecting layer to be made of metal material, the metal material is the alloy of active metal or active metal and inert metal.
2. OLED device as described in claim 1, which is characterized in that the transparent conductive material is ITO, the electron injection
Layer is the alloy of magnesium and silver.
3. OLED device as claimed in claim 1 or 2, which is characterized in that the thickness of the electron injecting layer is 1nm~5nm；
The mass ratio of magnesium and silver is 1 in the electron injecting layer:1~10:1.
4. OLED device as claimed in claim 3, which is characterized in that the thickness of the electron injecting layer is 2nm；The electronics
The mass ratio of magnesium and silver is 4 in implanted layer:1.
5. a kind of includes the organic light-emitting display device of Claims 1 to 4 any one of them OLED device.
6. a kind of manufacturing method of OLED device, which is characterized in that including：
One substrate is provided, forms anode and organic layer on the substrate；
Electron injecting layer is formed on the organic layer, the electron injecting layer is made of metal material, and the metal material is
The alloy of active metal or active metal and inert metal；
Transparent cathode is formed on the electron injecting layer.
7. the manufacturing method of OLED device as claimed in claim 6, which is characterized in that the transparent cathode is ITO, the electricity
Sub- implanted layer is the alloy of magnesium and silver.
8. the manufacturing method of OLED device as claimed in claims 6 or 7, which is characterized in that by the method for vapor deposition described
The electron injecting layer is formed on organic layer；The transparent cathode is formed by the method for sputtering.
9. the manufacturing method of OLED device as claimed in claims 6 or 7, which is characterized in that the thickness of the electron injecting layer
For 1nm~5nm；The mass ratio of magnesium and silver is 1 in the electron injecting layer:1~10:1.
10. the manufacturing method of OLED device as claimed in claim 9, which is characterized in that the thickness of the electron injecting layer is
2nm；The mass ratio of magnesium and silver is 4 in the electron injecting layer:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007623.5A CN108281556A (en) | 2017-01-05 | 2017-01-05 | OLED device and its manufacturing method and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007623.5A CN108281556A (en) | 2017-01-05 | 2017-01-05 | OLED device and its manufacturing method and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108281556A true CN108281556A (en) | 2018-07-13 |
Family
ID=62800561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710007623.5A Pending CN108281556A (en) | 2017-01-05 | 2017-01-05 | OLED device and its manufacturing method and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108281556A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11910691B2 (en) | 2018-12-28 | 2024-02-20 | Yungu (Gu'an) Technology Co., Ltd. | Display panel, manufacturing method thereof, and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1918948A (en) * | 2004-02-16 | 2007-02-21 | 独立行政法人科学技术振兴机构 | Light emitting transistor |
| CN102324463A (en) * | 2011-09-09 | 2012-01-18 | 昆山维信诺显示技术有限公司 | Preparation method of organic electroluminescence device |
| CN103794731A (en) * | 2013-12-31 | 2014-05-14 | 北京维信诺科技有限公司 | Organic light-emitting display device and organic light-emitting display thereof |
| CN104993068A (en) * | 2014-12-18 | 2015-10-21 | 四川虹视显示技术有限公司 | Manufacture method of semi-transparent OLED display device |
-
2017
- 2017-01-05 CN CN201710007623.5A patent/CN108281556A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1918948A (en) * | 2004-02-16 | 2007-02-21 | 独立行政法人科学技术振兴机构 | Light emitting transistor |
| CN102324463A (en) * | 2011-09-09 | 2012-01-18 | 昆山维信诺显示技术有限公司 | Preparation method of organic electroluminescence device |
| CN103794731A (en) * | 2013-12-31 | 2014-05-14 | 北京维信诺科技有限公司 | Organic light-emitting display device and organic light-emitting display thereof |
| CN104993068A (en) * | 2014-12-18 | 2015-10-21 | 四川虹视显示技术有限公司 | Manufacture method of semi-transparent OLED display device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11910691B2 (en) | 2018-12-28 | 2024-02-20 | Yungu (Gu'an) Technology Co., Ltd. | Display panel, manufacturing method thereof, and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106972115B (en) | The production method and OLED display panel of OLED display panel | |
| DE69734131T2 (en) | TWIN LIGHT ELECTRON INJECTION ELECTRODE FOR USE IN AN ELECTROLUMINESCENZING DEVICE | |
| KR101092968B1 (en) | Display apparatus, mobile device having the same | |
| DE112009001283T5 (en) | Organic electroluminescent element | |
| CN110058736B (en) | Flexible touch panel | |
| EP1171921A1 (en) | Organic electroluminescent component | |
| CN105047827A (en) | Top-emitting organic electroluminescent device | |
| CN100419550C (en) | Novel conductive material for thin-film transistors used in flat-panel displays | |
| CN109755286A (en) | A kind of OLED display panel and preparation method thereof | |
| CN108878688A (en) | Organic electroluminescent LED and preparation method thereof, display device | |
| US11374192B2 (en) | Flexible transparent electrode, flexible display panel, manufacture method, and display device | |
| CN107123743B (en) | Organic luminescent device and preparation method thereof, display panel and display device | |
| CN108281556A (en) | OLED device and its manufacturing method and display device | |
| CN106252382B (en) | Display device and preparation method thereof | |
| JP2019135694A (en) | Reflective anode electrode for organic EL display | |
| CN109742104A (en) | Smart window | |
| CN110148680A (en) | Organic light emitting display panel and preparation method thereof | |
| CN104752621B (en) | Method for improving the display quality of active matrix organic light-emitting display | |
| CN106898707A (en) | A kind of top emission OLED device and preparation method, display panel | |
| JP2012059470A (en) | Reflecting anodic electrode for organic el display | |
| US8044581B2 (en) | Inorganic electroluminescence device | |
| CN113078271B (en) | Organic electroluminescent device and display device | |
| CN109920927A (en) | Organic luminescent device and preparation method thereof | |
| TWI519657B (en) | Light emitting diode anode reflection layer and alloy material useful for the reflective layer | |
| CN109166979A (en) | A kind of el display device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180713 |
|
| RJ01 | Rejection of invention patent application after publication |