CN108281281A - Piece type solid capacitor and manufacturing method - Google Patents
Piece type solid capacitor and manufacturing method Download PDFInfo
- Publication number
- CN108281281A CN108281281A CN201711316137.8A CN201711316137A CN108281281A CN 108281281 A CN108281281 A CN 108281281A CN 201711316137 A CN201711316137 A CN 201711316137A CN 108281281 A CN108281281 A CN 108281281A
- Authority
- CN
- China
- Prior art keywords
- solid capacitor
- coating
- type solid
- aluminium foil
- aluminium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000003990 capacitor Substances 0.000 title claims abstract description 42
- 239000007787 solid Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims abstract description 30
- 239000004411 aluminium Substances 0.000 claims abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 22
- 239000011888 foil Substances 0.000 claims abstract description 20
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 16
- 239000002923 metal particle Substances 0.000 claims abstract description 12
- 239000005030 aluminium foil Substances 0.000 claims description 31
- 239000000126 substance Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 108090000723 Insulin-Like Growth Factor I Proteins 0.000 claims description 3
- 102000013275 Somatomedins Human genes 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims description 3
- 239000007800 oxidant agent Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000004064 recycling Methods 0.000 claims description 3
- 230000008439 repair process Effects 0.000 claims description 3
- 238000007761 roller coating Methods 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052709 silver Inorganic materials 0.000 abstract description 6
- 239000004332 silver Substances 0.000 abstract description 6
- 238000009713 electroplating Methods 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000003628 erosive effect Effects 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 210000000170 cell membrane Anatomy 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000009193 crawling Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses a kind of type solid capacitor and manufacturing methods, piece type solid capacitor includes anode tap, cathode terminal and the shielding tree lace between anode tap and cathode terminal, anode tap includes anode foils and the deielectric-coating that is coated in anode foils, deielectric-coating, conductive polymer layer and the metal particle layer that cathode terminal includes anode foils and is coated on successively in anode foils.Provided by the invention type solid capacitor and manufacturing method, by the metal particle layer for depositing nanometer grade or secondary nanometer grade on polymeric membrane, to replace carbon-coating and silver layer in the chip-shaped solid capacitor of existing aluminium, to reduce the equivalent series resistance of the chip-shaped solid capacitor of aluminium；And coating uniformity is good, compactness of electroplating is good and plated body binding force is strong, Low ESR, reduction electrode slice thickness, can block aqueous vapor erosion.
Description
Technical field
The present invention relates to capacitance technology field more particularly to a kind of type solid capacitor and manufacturing methods.
Background technology
In the prior art, as shown in Figure 1, existing type solid capacitor includes anode tap 1, cathode terminal 2 and shielding tree lace 3,
Anode tap 1 includes aluminium foil 4 and is coated on the deielectric-coating 4 of aluminium foil surface, cathode terminal 2 including aluminium foil 4 and is coated on aluminium foil table successively
Deielectric-coating 5, conductive polymer layer 6, carbon-coating 7 and the silver layer 8 in face.The cathode overwhelming majority of the chip-shaped solid capacitor of aluminium uses conductive
Metallic colloid (carbon paste, elargol etc.) is covered in above conducting polymer, to carry out electrode slice capacitance extraction, but metal-to-metal adhesive particle
More than micron grade, the poor contact between conducting polymer and conductive metal colloid is caused, causes interface impedance excessively high.
In addition, when the mutual storehouse of electrode slice is with pasting, electrode slice fitting is carried out using conductive metal paste (such as silver paste).Though
Constitute parallel-connection structure between right electrode slice, but because the metallic particles matching of conducting resinl and conductive paste is bad or crawling
When even, interface impedance will be caused excessively high, can not be formed Low ESR conducting, therefore occur electrode slice between impedance can not reach it is extremely low
Theoretical ESR（Equivalent Series Resistance, equivalent series resistance）Requirement.The existing chip-shaped solid-state electricity of aluminium
Holding the shortcomings that including is mainly：1, high interface impedance；2, uniformity is bad；3, adhesion strength is bad；4, heat conductivity is bad.
Therefore, the chip-shaped solid capacitor of existing aluminium is unable to reach extremely low ESR requirements, is that a technology urgently to be resolved hurrily is asked
Topic.
Invention content
Proposed by the present invention type solid capacitor, solid capacitor and piece type solid capacitor manufacturing method, it is intended to which solution shows
There is the chip-shaped solid capacitor of aluminium to be unable to reach the technical issues of extremely low ESR is required.
According to an aspect of the present invention, a kind of type solid capacitor is provided, piece type solid capacitor includes anode tap, cathode
End and the shielding tree lace between anode tap and cathode terminal, anode tap include anode foils and Jie for being coated in anode foils
Plasma membrane, deielectric-coating, conductive polymer layer and the metal particle layer that cathode terminal includes anode foils and is coated on successively in anode foils.
Further, metal particle layer uses the metallic of nano-scale or secondary nano-scale.
Further, anode foils use porous aluminium foil.
Further, deielectric-coating uses alundum (Al2O3).
According to another aspect of the present invention, a kind of type solid capacitor manufacturing method is also provided, is included the following steps：
Sintering：Aluminium powder or aluminium paste are coated on aluminium foil, aluminium powder or aluminium paste are sintered on aluminium foil under vacuum environment；
Chemical conversion：The aluminium foil sintered is melted under predetermined voltage, makes somatomedin film on aluminium foil；
It cuts：Aluminium foil after chemical conversion is cut into predetermined size；
Group row：Tree lace is shielded in anode tap and the cathode terminal roller coating between the two of the aluminium foil cut；
Chemical conversion：The aluminium foil that group is sequenced repairs cutting edge, and shielding tree lace following region is immersed in forming liquid, and is powered so that being situated between
Plasma membrane is grown；
Polymerization：Shielding tree lace following region is immersed respectively in oxidant and piece type solid capacitor liquid, temperature and humidity is controlled,
After recycling pre-determined number, make conductive polymer polymer growth inside deielectric-coating surface hole defect, forms conductive polymer layer；
Metal coating：The shielding tree lace following region for the aluminium foil having polymerize is passed through into chemical vapor deposition, chemical sputter, rack plating, chemistry
Metallic is coated in the periphery of conductive polymer layer by a kind of mode in plating.
It is obtained by the present invention to have the beneficial effect that：
Provided by the invention type solid capacitor and manufacturing method, by depositing nanometer grade or secondary nanometer grade on polymeric membrane
Metal particle layer, to replace carbon-coating and silver layer in the chip-shaped solid capacitor of existing aluminium, to reduce the chip-shaped solid capacitor of aluminium
Equivalent series resistance.Provided by the invention type solid capacitor and manufacturing method, coating uniformity is good, compactness of electroplating is good,
With plated body binding force is strong, Low ESR, reduction electrode slice thickness, can block aqueous vapor and corrodes, and reduce ESR.
Description of the drawings
Fig. 1 is the chip-shaped solid capacitor schematic diagram of existing aluminium；
Fig. 2 is the structural schematic diagram of piece type solid capacitor of the present invention.
Drawing reference numeral explanation：
10, anode tap；20, cathode terminal；30, tree lace is shielded；11, anode foils；12, deielectric-coating；21, conductive polymer layer；22、
Metal particle layer.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific implementation mode
It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
As shown in Fig. 2, one embodiment of the invention proposes a kind of type solid capacitor, piece type solid capacitor includes anode tap
10, cathode terminal 20 and the shielding tree lace 30 between anode tap 10 and cathode terminal 20, anode tap 10 include anode foils 11 and
The deielectric-coating 12 being coated in anode foils 11, cathode terminal 20 include anode foils 11 and the deielectric-coating being coated on successively in anode foils 11
21, conductive polymer layer 21 and metal particle layer 22.Specifically, in the present embodiment, metal particle layer 22 uses nano-scale
Or the metallic of secondary nano-scale.Anode foils 11 use porous aluminium foil.Deielectric-coating 12 uses alundum (Al2O3).
Provided by the invention type solid capacitor, compared with prior art, by polymeric membrane deposit nanometer grade or
The metal particle layer of secondary nanometer grade, to replace carbon-coating and silver layer in the chip-shaped solid capacitor of existing aluminium, to reduce aluminium core piece
The equivalent series resistance of type solid capacitor.Provided by the invention type solid capacitor, coating uniformity is good, compactness of electroplating is good,
With plated body binding force is strong, Low ESR, reduction electrode slice thickness, can block aqueous vapor and corrodes, and reduce ESR.
The present invention also provides a kind of type solid capacitor manufacturing methods, include the following steps：
Step S100, it is sintered：Aluminium powder or aluminium paste are coated on aluminium foil, are sintered to aluminium powder or aluminium paste under vacuum environment
On aluminium foil.
Step S200, it is melted into：The aluminium foil sintered is melted under predetermined voltage, makes somatomedin film on aluminium foil.
Step S300, it cuts：Aluminium foil after chemical conversion is cut into predetermined size.
Step S400, group row：Tree lace is shielded in anode tap and the cathode terminal roller coating between the two of the aluminium foil cut.
Step S500, it is melted into：The aluminium foil that group is sequenced repairs cutting edge, and shielding tree lace following region is immersed forming liquid
In, and be powered so that deielectric-coating growth.
Step S600, it polymerize：Shielding tree lace following region is immersed respectively in oxidant and piece type solid capacitor liquid, is controlled
Temperature and humidity processed makes conductive polymer polymer growth inside deielectric-coating surface hole defect after recycling pre-determined number, is formed high
Molecule conductive layer.
Step S700, metal coating：The shielding tree lace following region for the aluminium foil having polymerize is splashed by chemical vapor deposition, chemistry
Metallic is coated in the periphery of conductive polymer layer by a kind of mode in plating, rack plating, electroless plating.
In the present embodiment, metallic is nano-scale or secondary nano-scale.
Provided by the invention type solid capacitor manufacturing method, compared with prior art, instead of in molecule conductive layer
The technique for soaking carbon and leaching silver, and led macromolecule by a kind of mode in chemical vapor deposition, chemical sputter, rack plating, electroless plating
The peripheral coating chemical deposition conductive metal particles of electric layer, the metallic are nano-scale or secondary nano-scale.The present invention carries
The piece type solid capacitor manufacturing method of confession, coating uniformity is good, compactness of electroplating is good, with plated body binding force is strong, Low ESR, contracting
Powered down pole piece thickness can block aqueous vapor erosion, and reduce ESR.
It these are only the preferred embodiment of the present invention, be not intended to limit the scope of the invention, it is every to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (5)
1. a kind of type solid capacitor, which is characterized in that described type solid capacitor includes anode tap（10）, cathode terminal（20）、
And it is located at the anode tap（10）With the cathode terminal（20）Between shielding tree lace（30）, the anode tap（10）Including sun
Pole foil（11）And it is coated on the anode foils（11）On deielectric-coating（12）, the cathode terminal（20）Including anode foils（11）And according to
It is secondary to be coated on the anode foils（11）On deielectric-coating（12）, conductive polymer layer（21）And metal particle layer（22）.
2. according to claim 1 type solid capacitor, which is characterized in that
The metal particle layer（22）Using the metallic of nano-scale or secondary nano-scale.
3. according to claim 2 type solid capacitor, which is characterized in that
The anode foils（11）Using porous aluminium foil.
4. according to claim 2 type solid capacitor, which is characterized in that
The deielectric-coating（12）Using alundum (Al2O3).
5. a kind of type solid capacitor manufacturing method, which is characterized in that include the following steps：
Sintering：Aluminium powder or aluminium paste are coated on aluminium foil, are sintered to the aluminium powder or the aluminium paste under vacuum environment
On the aluminium foil；
Chemical conversion：The aluminium foil sintered is melted under predetermined voltage, makes somatomedin film on the aluminium foil；
It cuts：Aluminium foil after chemical conversion is cut into predetermined size；
Group row：Tree lace is shielded in anode tap and the cathode terminal roller coating between the two of the aluminium foil cut；
Chemical conversion：The aluminium foil that group is sequenced repairs cutting edge, and the shielding tree lace following region is immersed in forming liquid, and energization makes
Obtain deielectric-coating growth；
Polymerization：Shielding tree lace following region is immersed respectively in oxidant and piece type solid capacitor liquid, temperature and humidity is controlled,
After recycling pre-determined number, make conductive polymer polymer growth inside deielectric-coating surface hole defect, forms conductive polymer layer；
Metal coating：By the shielding tree lace following region for the aluminium foil having polymerize by chemical vapor deposition, chemical sputter, rack plating,
Metallic is coated in the periphery of the conductive polymer layer by a kind of mode in electroless plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711316137.8A CN108281281A (en) | 2017-12-12 | 2017-12-12 | Piece type solid capacitor and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711316137.8A CN108281281A (en) | 2017-12-12 | 2017-12-12 | Piece type solid capacitor and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108281281A true CN108281281A (en) | 2018-07-13 |
Family
ID=62801580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711316137.8A Pending CN108281281A (en) | 2017-12-12 | 2017-12-12 | Piece type solid capacitor and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108281281A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1484262A (en) * | 2002-08-28 | 2004-03-24 | Nec东金株式会社 | Solid electrolytic capacitor |
| CN101409157A (en) * | 2008-11-21 | 2009-04-15 | 福建国光电子科技股份有限公司 | Packaging technique for solid electrolyte capacitor |
| CN101552140A (en) * | 2008-02-22 | 2009-10-07 | 富士通株式会社 | Method for manufacturing electrode foil |
| CN102439670A (en) * | 2009-05-21 | 2012-05-02 | 凯米特电子公司 | Solid electrolytic capacitor with improved reliability |
| CN104299789A (en) * | 2014-10-28 | 2015-01-21 | 钰邦电子（无锡）有限公司 | Chip type solid electrolytic capacitor and manufacturing method thereof |
-
2017
- 2017-12-12 CN CN201711316137.8A patent/CN108281281A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1484262A (en) * | 2002-08-28 | 2004-03-24 | Nec东金株式会社 | Solid electrolytic capacitor |
| CN101552140A (en) * | 2008-02-22 | 2009-10-07 | 富士通株式会社 | Method for manufacturing electrode foil |
| CN101409157A (en) * | 2008-11-21 | 2009-04-15 | 福建国光电子科技股份有限公司 | Packaging technique for solid electrolyte capacitor |
| CN102439670A (en) * | 2009-05-21 | 2012-05-02 | 凯米特电子公司 | Solid electrolytic capacitor with improved reliability |
| CN104299789A (en) * | 2014-10-28 | 2015-01-21 | 钰邦电子（无锡）有限公司 | Chip type solid electrolytic capacitor and manufacturing method thereof |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180713 |
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