CN108267940A - Alignment board tests the overlay mark of focus - Google Patents
Alignment board tests the overlay mark of focus Download PDFInfo
- Publication number
- CN108267940A CN108267940A CN201611265857.1A CN201611265857A CN108267940A CN 108267940 A CN108267940 A CN 108267940A CN 201611265857 A CN201611265857 A CN 201611265857A CN 108267940 A CN108267940 A CN 108267940A
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- raster
- overlay mark
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- 239000003550 marker Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000010998 test method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000571 coke Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention relates to a kind of overlay marks of alignment board test focus, multiple first length labels, multiple second length labels, multiple first short labels are marked with the multiple second short labels using half using rectangle marked and raster-like so that raster-like marks the compound token with rectangle marked when focus is best, the compound token central point of alignment board identification is in center.Therefore, the figure layer with overlay mark do not have picture must under inclined situation, focus aligned condition be alignment offset close to 0, but as focus is toward just or toward negative, alignment offset can significantly increase, and the position of focus alignment can be extrapolated by deviating measurement according to alignment.
Description
Technical field
The present invention relates to the test images of alignment board, and pinpointed focus can quickly and be accurately detected more particularly to one kind
Alignment board test focus overlay mark.
Background technology
Litho machine (Mask Aligner) also known as：Mask alignment exposure machine, exposure system, lithography system etc..In photoetching,
If photoetching equipment can not achieve focusing, can not successfully mask plate and silicon chip be aligned and be exposed, also can not just be incited somebody to action
Figure on mask plate accurately projection exposure to being coated on the silicon chip of photoresist.Accordingly, it is determined that the pinpointed focus of photoetching equipment
It is extremely important for the figure for obtaining high quality.And determine the pinpointed focus of photoetching equipment, if had by oneself using photoetching equipment
Test method, pause is needed to produce, photoetching equipment operation own test method determines pinpointed focus.This just occupies work
The skill time, influence production efficiency.If using the wide test of menu bar, test method is complicated, and speed is slower, can equally influence to produce
Efficiency.
Invention content
Based on this, it is necessary to a kind of to test focus without board, just quickly and accurately detect pinpointed focus
Alignment board tests the overlay mark of focus.
A kind of overlay mark of alignment board test focus, the overlay mark includes traversal marker and longitudinal direction marks；Institute
It states traversal marker and includes the multiple first length labels and the multiple first short labels, the multiple first length label and the multiple first short marks
Remember arranged in parallel；The first length label includes the first long rectangle marked and the first raster-like label, the first long rectangle mark
Note marks arranged in parallel with first raster-like；The first short label is similar to the spread geometry of the described first length label,
Length 1/4 to 1/3 of the length of the first short label for the first length label；The longitudinal direction label includes multiple second length labels
With the multiple second short labels, the multiple second length label and the multiple second short labels are arranged in parallel；The second length label packet
The second long rectangle marked and the second raster-like label are included, the second long rectangle marked marks parallel with second raster-like
Row；The second short label is similar to the spread geometry of the described second length label, and the length of the second short label is the second length
The length 1/4 to 1/3 of label；
The multiple first length label is with the multiple second length label in hollow arrangement form outer mark；It is described more
A first short label marks, and internal layer label is described with the multiple second short label in hollow arrangement form internal layer
Outer mark surrounds.
The width of the first length label is 2 ± 0.4 μm in one of the embodiments,.
The width of the described first short label is 2 ± 0.4 μm in one of the embodiments,.
The width of the described first long rectangle is 1 ± 0.2 μm in one of the embodiments,.
The first raster-like label includes multiple small rectangles, the width of the small rectangle in one of the embodiments,
It it is 0.08 ± 0.01 μm, the distance between multiple small rectangles are 0.08 ± 0.01 μm.
The length of the first length label is 18 ± 2 μm in one of the embodiments,.
The distance between the first length label and the described first short label of arranged adjacent in one of the embodiments,
It is 1 ± 0.2 μm.
The length of the described first short label is 6 ± 1 μm in one of the embodiments,.
The raster-like mark of the first length label and the described first short label of arranged adjacent in one of the embodiments,
Note is relatively or contrarily.
The raster-like mark of the second length label and the described second short label of arranged adjacent in one of the embodiments,
Note is relatively or contrarily.
In the overlay mark of above-mentioned alignment board test focus, multiple first length labels, multiple second length labels, Duo Ge
One short label uses half rectangle marked and the combination of half raster-like label with the multiple second short labels, in best coke
During point, rectangle marked and raster-like label are undeformed, and the overlay mark of alignment board identification is in center position, at this point, covering
Offset is carved close to 0.Pinpointed focus is tested due to the combination using rectangle marked and raster-like label, thus in pinpointed focus
Polarization or it is partially negative when, alignment offset can significantly increase so that alignment board or user can timely and effectively have found best coke
There is offset in point, and the position of pinpointed focus can be extrapolated according to alignment offset.
Description of the drawings
Fig. 1 is the structure diagram for the overlay mark that alignment board tests focus；
Fig. 2 is the transition diagram of the corresponding alignment offset of overlay mark；
Fig. 3 is the fitting schematic diagram of alignment offset and focus；
Fig. 4 is focal position and the schematic diagram of alignment offset correspondence.
Specific embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In attached drawing
Give presently preferred embodiments of the present invention.But the present invention can realize in many different forms, however it is not limited to this paper institutes
The embodiment of description.On the contrary, the purpose for providing these embodiments is to make the understanding to the disclosure more thorough
Comprehensively.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The normally understood meaning of technical staff is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that the limitation present invention.Term as used herein "and/or" includes one or more related
Listed Items arbitrary and all combination.
As shown in Figure 1, the structure diagram of the overlay mark of focus is tested for alignment board.
A kind of overlay mark of alignment board test focus, the overlay mark includes traversal marker and longitudinal direction marks；Institute
It states traversal marker and includes the multiple first long labels 10 and multiple first short labels 20, the multiple first long label 10 and multiple the
One short label 20 is arranged in parallel；The first long label 10 includes the first long 101 and first raster-like label 102 of rectangle marked,
The first long rectangle marked 101 and the first raster-like label 102 are arranged in parallel；The first short label 20 and described the
The spread geometry of one long label 10 is similar, and the length of the first short label 20 is the length 1/4 to 1/3 of the first long label 10；
The longitudinal direction label includes the multiple second long labels 30 and multiple second short labels 40, the multiple second long label 30 with it is multiple
Second short label 40 is arranged in parallel；The second long label 30 includes the second long 301 and second raster-like of rectangle marked label
302, the second long rectangle marked 301 and the second raster-like label 302 are arranged in parallel；The second short label 40 and institute
The spread geometry for stating the second long label 30 is similar, and the length of the second short label 40 is arrived for the length 1/4 of the second long label 30
1/3。
The multiple first long label 10 is in hollow arrangement form outer mark with the multiple second long label 30；Institute
The multiple first short labels 20 are stated to mark, and the internal layer mark in hollow arrangement form internal layer with the multiple second short label 40
Note is surrounded by the outer mark.
In one embodiment, traversal marker includes two the first long labels 10 and two the first short labels 20, and longitudinal direction is marked
Note includes two the second long labels 30 and two the second short labels 40.Two the first long labels 10 are in two the second long labels 30
Hollow arrangement form outer mark, wherein, two the first long labels 10 are arranged in parallel, two the second long 30 parallels of label
Row, the disjoint arrangement vertical with the second long label 30 of the first long label 10.The shape of first long 10 and second long label 30 of label
Shape, length are identical.Two the first short labels 20 and two the second short labels 40 are marked in hollow arrangement form internal layer, wherein,
Two the first short labels 20 are arranged in parallel, and two the second short labels 40 are arranged in parallel, the first short 20 and second short label 40 of label
Vertical disjoint arrangement.First short label 20 is identical with shape, the length of the second short label 40.Internal layer is marked by outer mark
It is surrounded.
Specifically, in traversal marker, the first long label 10 and the first short label 20 are arranged in parallel in the horizontal, wherein, two
A first short label 20 is arranged among two the first long labels 10, between the first long label 10 and the adjacent first short label 20
Distance for 0.944 μm, and between two the first adjacent short labels 20 be about 3 μm.First long label 10 and adjacent first
The grating of short label 20 is opposite and opposite, that is, the raster-like of 1 the first long label 10 and the adjacent first short label 20 is labeled as
When opposite, another 1 the first long label 10 is with the raster-like of the adjacent first short label 20 labeled as opposite.
In the label of longitudinal direction, the second long label 30 and the second short label 40 are arranged in parallel in the horizontal, wherein, it is two second short
Label 40 is arranged among two the second long labels 30, and the distance between the second long label 30 and the adjacent second short label 40 are
0.944 μm, and between two the second adjacent short labels 40 it is about 3 μm.Second long label 30 and the adjacent second short label 40
Grating be opposite and opposite, that is, the raster-like of 1 the second long label 30 and the adjacent second short label 40 labeled as it is opposite when,
Another 1 the second long label 30 is with the raster-like of the adjacent second short label 40 labeled as opposite.
In one embodiment, the width of the first long label 10 is 2 ± 0.4 μm, generally 1.965 μm.
In one embodiment, the width of the first short label 20 is 2 ± 0.4 μm, general 1.965 μm.
In one embodiment, the width of the first long rectangle is 1 ± 0.2 μm, generally 0.983 μm.
In one embodiment, the first raster-like label 102 includes multiple small rectangles, and the width of the small rectangle is 0.08
The distance between ± 0.01 μm, generally 0.082 μm, multiple small rectangles are 0.08 ± 0.01 μm, generally 0.082 μm.
In one embodiment, the length of the first long label 10 is 18 ± 2 μm, generally 18.489 μm.
In one embodiment, the distance between the first long label 10 and the described first short label 20 of arranged adjacent are 1
± 0.2 μm, generally 0.944 μm.
In one embodiment, the length of the first short label 20 is 6 ± 1 μm, generally 6.163 μm.
In one embodiment, the raster-like of the first long label 10 and the described first short label 20 of arranged adjacent marks phase
Pair or it is opposite.
In one embodiment, the raster-like of the second long label 30 and the described second short label 40 of arranged adjacent marks phase
Pair or it is opposite.
Based on above-mentioned all embodiments, use above-mentioned overlay mark extrapolate the process of the position of focus for：
Normal overlay mark be all it is solid, no picture must under inclined situation, with focus toward just or toward it is negative when,
Alignment offset is forever close to 0.Therefore, after focal shift, user can not know whether focus finds according to alignment offset
Offset.
Incorporated by reference to Fig. 2 and Fig. 3.
And the half of overlay mark is solid rectangle marked in the present invention, half is the raster-like mark of more item compositions
Note, it is undeformed with raster-like label that the condition of focus alignment is rectangle marked, at this point, alignment offset is close to 0.And in alignment
Mark no picture must be under inclined situation, but as focus is toward just or toward negative, raster-like label will appear apparent deformation, such as
The small rectangle width of raster-like label is no longer equal, meanwhile, alignment offset also significantly increases, incorporated by reference to Fig. 4.In pinpointed focus
During position, close to 0, and at suboptimum focal position, alignment offset just can significantly differentiate alignment offset, and polarization or
When partially negative, alignment offset just becomes apparent from, and focus at this time can be determined and occur in time by being conducive to alignment board or user
Offset.And then the position of focus alignment can be extrapolated according to the result of alignment offset.
Based on above-mentioned all embodiments, overlay mark is covered with entire photoetching field, e.g., scan-type litho machine resolution chart,
Scan-type litho machine interlocking graphics, stepper resolution chart, stepper interlocking graphics etc., can quickly and
Accurately obtain optimal focus position.
It is multiple first long labels 10, multiple second long labels 30, more in the overlay mark of above-mentioned alignment board test focus
A first short label 20 is marked with the multiple second short labels 40 using half using rectangle marked and raster-like so that raster-like
Mark the compound token with rectangle marked when focus is best, the compound token central point of alignment board identification is in center.
Therefore, there is no picture must be under inclined situation in the figure layer with overlay mark, focus aligned condition is alignment offset close to 0,
But as focus is toward just or toward bearing, alignment offset can significantly increase, deviating measurement according to alignment can extrapolate
The position of focus alignment.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that those of ordinary skill in the art are come
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of overlay mark of alignment board test focus, the overlay mark includes traversal marker and longitudinal direction marks；It is special
Sign is, the traversal marker includes the multiple first length labels and the multiple first short labels, the multiple first length label with it is more
A first short label is arranged in parallel；The first length label includes the first long rectangle marked and the first raster-like and marks, and described the
One long rectangle marked marks arranged in parallel with first raster-like；The arrangement of the first short label and the described first length label
Shape is similar, and the length of the first short label grows the length 1/4 to 1/3 marked for first；The longitudinal direction label includes multiple
Second length label and the multiple second short labels, the multiple second length label and the multiple second short labels are arranged in parallel；Described
Two length labels include the second long rectangle marked and the second raster-like label, the second long rectangle marked and second raster-like
It marks arranged in parallel；The second short label is similar to the spread geometry of the described second length label, the length of the second short label
Spend the length 1/4 to 1/3 for the second length label；
The multiple first length label is with the multiple second length label in hollow arrangement form outer mark；The multiple
One short label is marked with the multiple second short label in hollow arrangement form internal layer, and internal layer label is by the outer layer
Label surrounds.
2. the overlay mark of alignment board test focus according to claim 1, which is characterized in that the first length label
Width be 2 ± 0.4 μm.
3. the overlay mark of alignment board test focus according to claim 1, which is characterized in that the first short label
Width be 2 ± 0.4 μm.
4. the overlay mark of alignment board test focus according to claim 1, which is characterized in that the first long rectangle
Width be 1 ± 0.2 μm.
5. the overlay mark of alignment board test focus according to claim 1, which is characterized in that first raster-like
Label includes multiple small rectangles, and the width of the small rectangle is 0.08 ± 0.01 μm, and the distance between multiple small rectangles are 0.08
±0.01μm。
6. the overlay mark of alignment board test focus according to claim 1, which is characterized in that the first length label
Length be 18 ± 2 μm.
7. the overlay mark of alignment board test focus according to claim 1, which is characterized in that the first length label
The distance between described first short label of arranged adjacent is 1 ± 0.2 μm.
8. the overlay mark of alignment board test focus according to claim 1, which is characterized in that the first short label
Length be 6 ± 1 μm.
9. the overlay mark of alignment board test focus according to claim 1, which is characterized in that the first length label
Raster-like label and the described first short label of arranged adjacent raster-like label relatively or contrarily.
10. the overlay mark of alignment board test focus according to claim 1, which is characterized in that the second length mark
The raster-like label and the raster-like of the described second short label of arranged adjacent of note mark relatively or contrarily.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611265857.1A CN108267940A (en) | 2016-12-30 | 2016-12-30 | Alignment board tests the overlay mark of focus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611265857.1A CN108267940A (en) | 2016-12-30 | 2016-12-30 | Alignment board tests the overlay mark of focus |
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| Publication Number | Publication Date |
|---|---|
| CN108267940A true CN108267940A (en) | 2018-07-10 |
Family
ID=62770129
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611265857.1A Pending CN108267940A (en) | 2016-12-30 | 2016-12-30 | Alignment board tests the overlay mark of focus |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11142108A (en) * | 1997-11-07 | 1999-05-28 | Toshiba Corp | Pattern measuring method |
| JP2000010254A (en) * | 1998-06-19 | 2000-01-14 | Toshiba Corp | Halftone type phase shift mask and method for measuring misalignment measurement mark |
| JP2001091214A (en) * | 1999-09-24 | 2001-04-06 | Toshiba Corp | Pattern-measuring method |
| JP2001102282A (en) * | 1999-09-28 | 2001-04-13 | Toshiba Corp | Methdo for controlling aligner and method for controlling semiconductor manufacturing apparatus |
| CN101630126A (en) * | 2008-07-15 | 2010-01-20 | 中芯国际集成电路制造(上海)有限公司 | Method and system for correcting exposure system for manufacturing integrated circuit |
| CN106154739A (en) * | 2015-04-15 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | Mask plate and the determination methods of focal shift |
| CN106154741A (en) * | 2015-04-21 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | Mask plate, the method for testing of defocus amount and test system thereof |
-
2016
- 2016-12-30 CN CN201611265857.1A patent/CN108267940A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11142108A (en) * | 1997-11-07 | 1999-05-28 | Toshiba Corp | Pattern measuring method |
| JP2000010254A (en) * | 1998-06-19 | 2000-01-14 | Toshiba Corp | Halftone type phase shift mask and method for measuring misalignment measurement mark |
| JP2001091214A (en) * | 1999-09-24 | 2001-04-06 | Toshiba Corp | Pattern-measuring method |
| JP2001102282A (en) * | 1999-09-28 | 2001-04-13 | Toshiba Corp | Methdo for controlling aligner and method for controlling semiconductor manufacturing apparatus |
| CN101630126A (en) * | 2008-07-15 | 2010-01-20 | 中芯国际集成电路制造(上海)有限公司 | Method and system for correcting exposure system for manufacturing integrated circuit |
| CN106154739A (en) * | 2015-04-15 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | Mask plate and the determination methods of focal shift |
| CN106154741A (en) * | 2015-04-21 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | Mask plate, the method for testing of defocus amount and test system thereof |
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Application publication date: 20180710 |