CN108231804A - A kind of photoelectric detection unit and its manufacturing method, photoelectric detection equipment - Google Patents

Abstract

The embodiment of the invention discloses a kind of photoelectric detection unit and its manufacturing method, photoelectric detection equipments.The photoelectric detection unit includes underlay substrate, and the film transistor device being set on underlay substrate, including active layer, grid, source electrode and drain electrode under the action of grid signal, is connected source electrode and drain electrode using active layer；The photoelectric detector being set on underlay substrate for inspiring photoelectric current in the case where photon acts on, generates electric signal, including the photoelectric conversion layer being located on underlay substrate, the electrode layer contacted with photoelectric conversion layer.Wherein, active layer is set with photoelectric conversion layer same layer；First electrode is electrically connected with source electrode, is used for transmission the electric signal of generation.The unit has the advantages of manufacture craft is simple, and structure is frivolous, and photoelectric conversion efficiency is high.

Description

Photoelectric detection unit, manufacturing method thereof, and photoelectric detection device

technical field

The invention relates to the field of photoelectric detection, in particular to a photoelectric detection unit, a manufacturing method thereof, and a photoelectric detection device.

Background technique

The photodetection unit is a device unit that converts light radiation energy into electrical energy and derives electrical signals. In the prior art, photoelectric detection units are widely used in various fields of military affairs and national economy. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc.

The photodetection unit commonly used in the prior art utilizes photoresistors, photodiodes, photomultiplier tubes, etc. to realize the photoelectric conversion function. For the photodetection unit, there has been a demand to improve the photoelectric conversion efficiency. In the conventional prior art, photodiode devices are used to realize photoelectric conversion. Since the photoelectric conversion layer of an amorphous silicon diode requires a large thickness of amorphous silicon, the process is difficult to realize. In addition, the photodetection layer is fabricated after the thin film transistor is completed. Its process is bound to have an impact on thin film transistor devices. Therefore, in the prior art, the manufacture of photodetector devices is difficult and the process is complicated, which is also not conducive to the thinning and thinning of devices, units and equipment.

Contents of the invention

The invention provides a photoelectric detection unit, which includes a substrate, a thin film transistor device and a photodetection device arranged on the substrate.

Wherein, the thin film transistor device includes: an active layer, a gate, a gate insulating layer, a source and a drain;

The photodetector device includes: a photoelectric conversion layer and an electrode layer; the electrode layer is in contact with the photoelectric conversion layer, and the electrode layer includes a first electrode and a second electrode that are independent of each other; and, the active layer and the photoelectric conversion layer are arranged on the same layer; the first electrode electrically connected to the source.

Compared with the photodetection unit of the traditional structure, the photodetection device of the embodiment of the present invention has a large light-receiving area and a simple structure, and at the same time, the photoelectric conversion efficiency is significantly improved under the action of an external electric field. The photodetection unit of the embodiment of the present invention has a simple structure, and compared with the photodetection unit of the traditional structure, the stage difference is small, the process is simple, the light receiving area is large, and the photoelectric conversion efficiency is high.

Wherein, the first electrode is set to include a plurality of first strip electrodes parallel to each other; the second electrode is set to include a plurality of second strip electrodes parallel to each other; the first strip electrodes and the second strip electrodes are alternately arranged at intervals .

Optionally, the photoelectric conversion layer includes a first pattern formed by doping, and an orthographic projection of the first pattern on the base substrate at least partially overlaps with the first strip-shaped electrode.

Optionally, the photoelectric conversion layer further includes a second pattern formed by doping, and the orthographic projection of the second pattern on the base substrate at least partially overlaps with the second strip-shaped electrode.

Optionally, the doping types of the first pattern and the second pattern are different.

Optionally, the photodetection unit further includes a first protection layer located on a side of the thin film transistor device and the photodetection device away from the substrate.

Optionally, the TFT device further includes a light-shielding layer, the light-shielding layer is located on the side of the active layer away from the gate, and the orthographic projection of the light-shielding layer on the base substrate includes the orthographic projection of the active layer on the base substrate.

Optionally, the active layer includes an active region and an ohmic contact region formed by doping.

Optionally, the first electrode is a transparent conductor, and/or the second electrode is a transparent conductor.

Optionally, the photodetection unit further includes a reflective layer disposed on a side of the photoelectric conversion layer close to the substrate.

Optionally, the reflective layer is made of metal material, and the photodetection unit further includes a second protective layer disposed between the reflective layer and the photoelectric conversion layer, and the second protective layer is made of insulating material.

Optionally, the gate is located on the side of the active layer away from the substrate, or the gate is located on the side of the active layer close to the substrate.

Optionally, the electrode layer is arranged on the same layer as the source electrode and the drain electrode, or the electrode layer is arranged on the same layer as the gate electrode.

The present invention also provides a radio and television detection device, including the above-mentioned photoelectric detection unit.

The present invention also provides a method for manufacturing a photodetection unit, including forming an active layer and a photoelectric conversion layer; forming a gate; forming a gate insulating layer; forming a first electrode and a second electrode; forming a source electrode and a drain electrode; The forming of the active layer and the photoelectric conversion layer includes forming the active layer and the photoelectric conversion layer through one patterning process. The active layer and the photoelectric conversion layer are formed by one patterning process, which simplifies the process steps and is beneficial to the lightness and thinning of the photodetection unit.

Optionally, forming the active layer and the photoelectric conversion layer further includes forming a first pattern on the photoelectric conversion layer through a first doping process.

Optionally, forming the active layer and the photoelectric conversion layer further includes forming a second pattern on the photoelectric conversion layer through a second doping process.

Optionally, the doping types of the doping processes used to form the first pattern and the second pattern are different.

Optionally, the manufacturing method of the photodetection unit further includes, the patterning process for forming the first electrode is the same as the mask pattern used in the first doping process; the patterning process for forming the second electrode is the same as the mask plate used in the second doping process The pattern is the same.

Optionally, the first doping process further includes forming an ohmic contact region on the active layer through the first doping process.

Optionally, the manufacturing method of the photodetection unit further includes forming a first protection layer on the thin film transistor device and the photodetection device.

Optionally, the manufacturing method of the photodetection unit further includes forming a reflective layer on the base substrate.

Optionally, the material of the reflective layer is metal; the manufacturing method of the photodetection unit further includes forming a second protective layer between the reflective layer and the photoelectric conversion layer, and the second protective layer is an insulating material.

Optionally, the manufacturing method of the photodetection unit further includes forming a light-shielding layer on a side of the active layer away from the gate, and the orthographic projection of the light-shielding layer on the base substrate includes the orthographic projection of the active layer on the base substrate.

Optionally, forming the gate is completed after forming the active layer and the photoelectric conversion layer, or forming the gate is completed before forming the active layer and the photoelectric conversion layer.

Optionally, forming the first electrode and the second electrode and forming the source and drain are completed simultaneously.

Optionally, forming the first electrode and the second electrode is completed simultaneously with forming the gate.

The manufacturing method of the photodetection unit provided by the present invention simplifies the manufacturing process by changing the relationship among various steps, and manufactures the photodetection unit with better performance by using relatively simple steps.

Description of drawings

In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present invention, rather than limiting the present invention.

Figure 1a is a photodetection unit according to an embodiment of the present invention;

Fig. 1b is a sectional view along A-A of the photodetection unit of Fig. 1a;

Fig. 2 is the photodetection unit of another embodiment of the present invention;

Fig. 3 is the photodetection unit of another embodiment of the present invention;

Fig. 4 is the photodetection unit of another embodiment of the present invention;

Fig. 5 is the photodetection unit of another embodiment of the present invention;

Fig. 6 is the photodetection unit of another embodiment of the present invention;

7 is a schematic diagram of a manufacturing method of a photodetection unit according to an embodiment of the present invention;

8 is a schematic diagram of forming an active layer and a photoelectric conversion layer according to an embodiment of the present invention;

9 is a schematic diagram of a manufacturing method of a photodetection unit according to another embodiment of the present invention;

10 is a schematic diagram of a manufacturing method of a photodetection unit according to another embodiment of the present invention;

11 is a schematic diagram of a manufacturing method of a photodetection unit according to another embodiment of the present invention;

12 is a schematic diagram of a manufacturing method of a photodetection unit according to another embodiment of the present invention;

Fig. 13 is a photoelectric detection device according to an embodiment of the present invention.

Description of reference numerals: 1 base substrate, 20 thin film transistor device, 30 photodetector device, 21 active layer, 211 ohm contact area, 212 active area, 22 gate, 220 gate line, 23 source, 24 drain , 240 data line, 25 gate insulating layer, 26 first insulating layer, 27 light shielding layer, 31 photoelectric conversion layer, 311 first pattern, 312 second pattern, 32 electrode layer, 321 first electrode, 322 second electrode, 3211 The first strip electrode, 3221 second strip electrode, 4 first protective layer, 5 reflective layer, 6 second protective layer, S10 forms the active layer and photoelectric conversion layer, S11 forms the patterning of the active layer and photoelectric conversion layer process, S12 the first doping process, S13 the second doping process, S20 forms the gate, S30 forms the gate insulating layer, S40 forms the first electrode and the second electrode, S50 forms the source and drain, S60 forms the first protection layer, S70 forms a reflective layer, and S80 forms a second protective layer.

Detailed ways

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the following will clearly and completely describe the technical solutions of the embodiments of the present invention in conjunction with the drawings of the embodiments of the present invention. Apparently, the described embodiments are some, not all, embodiments of the present invention. Based on the described embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. "First", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Likewise, words like "a", "an" or "the" do not denote a limitation of quantity, but mean that there is at least one. "Comprising" or "comprising" and similar words mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other elements or items. Words such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right" and so on are only used to indicate the relative positional relationship. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

In the present invention, two structures "set in the same layer" means that the two structures are formed by the same material layer, so they belong to the same layer in the lamination relationship. Further, the two structures can be formed by the same process, especially by The same patterning process is formed. However, "arranging on the same layer" does not mean that the distance between the structure and the base substrate 1 is the same, and it does not mean that they are completely the same as other stacked structures between the base substrate 1 .

In the present invention, "patterning process" essentially forms a process step with a specific pattern structure, which may include one or more steps of process steps such as photoresist coating, exposure, development, etching and photoresist stripping; it may also be Embossing process, inkjet printing process and other technical means in this field can realize patterning and form the required pattern structure.

A photodetection unit according to an embodiment of the present invention includes a substrate 1, a thin film transistor device 20 and a photodetection device 30 disposed on the substrate 1, wherein the thin film transistor device 20 is electrically connected to the photodetection device 30; the thin film Transistor device 20 has active layer 21, gate 22, source 23, drain 24 and gate insulating layer 25; Gate insulating layer 25 is arranged between gate 22 and active layer 21; Above gate 22 is provided with The first insulating layer 26, the source electrode 23 and the drain electrode 24 are connected to the active layer 21 through the via hole on the gate insulating layer 25 and the first insulating layer 26; Layer 31. The photodetection device 30 also has an electrode layer 32 in contact with the photoelectric conversion layer 31 . The electrode layer 32 includes a first electrode 321 and a second electrode 322, and the two electrodes are independent of each other. Wherein, the photoelectric conversion layer 31 and the active layer 21 are provided in the same layer; wherein, the source electrode 23 and the first electrode 321 are configured to be electrically connected.

Wherein, the photodetection device 30 and the thin film transistor device 20 are arranged side by side in a photodetection unit, and FIG. 1a is an arrangement method according to an embodiment of the present invention. Components such as the active layer 21 and the gate insulating layer 25 are not shown in FIG. 1a.

As shown in Figure 1a, the first electrode 321 is configured to include a plurality of first strip electrodes 3211, and the plurality of first strip electrodes 3211 are arranged in parallel; the second electrode 322 is configured to include a plurality of second strip electrodes 3221. The second strip electrodes 3221 are arranged in parallel. The plurality of first strip-shaped electrodes 3211 of the first electrode 321 and the plurality of second strip-shaped electrodes 3221 of the second electrode 322 are spaced apart from each other and arranged in a tooth comb shape.

Optionally, one first strip-shaped electrode 3211 and one second strip-shaped electrode 3221 may be arranged at intervals in sequence, or one first strip-shaped electrode 3211 and multiple second strip-shaped electrodes 3221 may be arranged at intervals, and multiple first strip-shaped electrodes 3221 may be arranged at intervals. The strip electrodes 3211 are arranged at intervals from one second strip electrode 3221 , and the plurality of first strip electrodes 3211 are arranged at intervals from the plurality of second strip electrodes 3221 .

Optionally, the first strip electrodes 3211 and the second strip electrodes 3221 are parallel to each other.

Optionally, the photodetection unit is approximately rectangular, and its side length is greater than or equal to 50 microns and less than or equal to 150 microns; the distance between the first strip electrode 3211 and its adjacent second strip electrode 3221 is greater than or equal to 3 microns, Less than or equal to 20 microns; the width of the first strip electrode 3211 and the second strip electrode 3221 is greater than or equal to 5 microns, and less than or equal to 20 microns.

Optionally, the first electrode 321 and the second electrode 322 are transparent conductive materials, which can further increase the utilization rate of light energy, thereby further improving the photoelectric conversion efficiency; for example, the first electrode 321 and the second electrode 322 can be indium tin oxide .

Fig. 1b is a cross-sectional view of Fig. 1a along the direction A-A. As shown in FIG. 1b, a thin film transistor device 20 is a photoelectric conversion unit with a top-gate structure, wherein the gate 22 is located on the side of the active layer 21 away from the substrate 1, and the electrode layer 32 is located on the side of the photoelectric conversion layer 31 away from the substrate 1. Side; the photoelectric conversion layer 31 and the active layer 21 are arranged in the same layer relative to the base substrate 1 , and at the same time, the source electrode 23 , the drain electrode 24 and the electrode layer 32 are also arranged in the same layer.

In the working state, a voltage difference is set between the first electrode 321 and the second electrode 322 to form an electric field. When the photoelectric conversion layer 31 receives light, carriers will be generated, and then the first electrode 321 and the second electrode will be connected. 322. When the gate 22 receives a signal so that the source 23 and the drain 24 are electrically connected, a current is generated between the first electrode 321 and the second electrode 322 under the action of an electric field, and the electrical signal is transmitted to the drain 24 through the active layer 21 . Photodetection is achieved by detecting the generated electrical signal and/or its changes. Compared with the photodetection unit of the traditional structure, the photodetection device 30 of the embodiment of the present invention has a large light-receiving area and a simple structure, and at the same time, the photoelectric conversion efficiency is significantly improved under the action of an external electric field. The photodetection unit of the embodiment of the present invention has a simple structure, and compared with the photodetection unit of the traditional structure, the stage difference is small, the process is simple, the light receiving area is large, and the photoelectric conversion efficiency is high.

Optionally, the photoelectric conversion layer 31 can be one or more combinations of semiconductor materials with photoelectric effect, such as amorphous silicon, single crystal silicon, polycrystalline silicon, or doped polycrystalline silicon, which can generate carriers after photon excitation , electrically connecting the first electrode 321 and the second electrode 322 . The second electrode 322 may be configured to be connected to a voltage source.

For example, the photoelectric conversion layer 31 is made of polysilicon material.

Optionally, the active layer 21 may be doped to form an ohmic contact region 211 different from the semiconductor region 212 . The ohmic contact can be increased, the contact resistance between the source electrode 23 and the drain electrode 24 and the active layer 21 can be reduced, the driving voltage of the gate can be reduced, the loss of data signals can be reduced, and the power consumption can be reduced.

It should be noted that the drawings in the specification are schematic, and FIG. 1a is not used as a basis for limiting the size and quantity of the first strip electrodes 3211 and the second strip electrodes 3221; FIG. 1a also does not limit the thin film transistor device 20 and the relative position and size relationship of the photodetector device 30 in the direction of the base substrate 1 . In fact, technicians can set the thin film transistor device 20 and the photodetector device 30 as shown in FIG. The direction of the data line 240, and adaptively adjust the position of the thin film transistor device 20; the size of the thin film transistor device 20 can also be changed to meet the requirements of performance indicators such as aperture ratio.

According to a photodetection unit according to another embodiment of the present invention, as shown in FIG. The orthographic projections in the directions overlap at least partially. Wherein, the first pattern 311 is formed by doping the material of the photoelectric conversion layer 31 to form an ohmic contact between the photoelectric conversion layer 31 and the first electrode 321 to further improve the photoelectric conversion efficiency.

Optionally, the orthographic projection of the first pattern 311 in the direction of the substrate 1 can completely cover the first strip electrode 3211, or can completely overlap with the projection of the first electrode 3211, so as to form sufficient ohmic contact and reduce resistance. Further improve the photoelectric conversion efficiency.

According to a photodetection unit according to another embodiment of the present invention, as shown in FIG. The orthographic projections in the directions overlap at least partially. Wherein, the second pattern 312 is formed by doping the material of the photoelectric conversion layer 31 to form an ohmic contact between the photoelectric conversion layer 31 and the second electrode 322 to reduce resistance and further improve photoelectric conversion efficiency.

Similarly, the orthographic projection of the second pattern 312 in the direction of the base substrate 1 can completely cover the second strip electrode 3221, and can also completely overlap with the projection of the second strip electrode 3221, so as to form sufficient ohmic contact and further improve Photoelectric conversion efficiency.

Optionally, the doping types of the first pattern 311 and the second pattern 312 may be the same or different. For example, it may be that the first pattern 311 is p-type doped, and the second pattern 312 is n-type doped; it may also be that the first pattern 311 is n-type doped, and the second pattern 312 is p-type doped; it may also be Both the first pattern 311 and the second pattern 312 are p-type doped or n-type doped.

When the doping types of the first pattern 311 and the second pattern 312 are different, the doping types of the two can be selected to match the direction of the potential difference between the first electrode 321 and the second electrode 322 . For example, when the second electrode 322 is connected to a positive voltage source, the second pattern 312 is set to be p-type doped, and the first pattern 311 is set to be an n-type pattern; or, when the second electrode 322 is connected to a negative voltage source, the second The second pattern 312 is set as n-type doping, and the first pattern 311 is set as p-type pattern. In this way, a PN junction can be formed between the first electrode 321 and the second electrode 322, and under the joint action of the PN junction and the electric field force, the transmission efficiency of the generated carriers can be improved, and the current transmission efficiency can be further improved, thereby further improving Photoelectric conversion efficiency.

Optionally, the first electrode 321 and/or the second electrode 322 is a transparent conductive material, which can further increase the utilization rate of light energy, thereby further improving the photoelectric conversion efficiency; for example, the first electrode 321 and/or the second electrode 322 can be Indium tin oxide.

Optionally, according to another embodiment of the present invention, the photodetection unit further includes a first protective layer 4, which is located on the side of the thin film transistor device 20 and the photodetection device 30 away from the base substrate 1, and is used to separate the thin film transistor device 20 and the photodetection device The detection device 30 is isolated from the outside world. The first protective layer can be made of an insulating material with high light transmittance, so as to maximize the utilization rate of light while playing a protective role. Optionally, according to another embodiment of the present invention, as shown in FIG. 4 , the photodetection unit further includes a reflective layer 5; the reflective layer 5 is disposed on the side of the photoelectric conversion layer 31 close to the base The light from the photoelectric conversion layer 31 is reflected, and the light entering the photoelectric conversion unit is reused to increase the utilization rate of light and further improve the photoelectric conversion efficiency.

Optionally, the reflective layer 5 is a metal material, and the photodetection unit also includes a second protective layer 6; the second protective layer 6 is disposed between the reflective layer 5 and the photoelectric conversion layer 31, and is an insulating material for isolating the reflective layer 5. Electrical connection with the photoelectric conversion layer 31 . Metal material is used as the material of the reflective layer 5, and the reflective layer 5 can be formed by means of sputtering, etc., which further simplifies the process; meanwhile, the metal material has a relatively high reflectivity, which can effectively improve the utilization rate of light.

According to another embodiment of the photodetection unit of the present invention, the thin film transistor device 20 of the photodetection unit has a top-gate structure, and the gate 22 is disposed on a side of the photoelectric conversion layer 31 close to the substrate 1 . The gate 22 and the electrode layer 32 are arranged in the same layer, that is, formed by the same material layer. After the material layer is formed, a pattern including the gate 22 and the electrode layer 32 is formed by a patterning process, which can further simplify the process.

Optionally, according to an embodiment of the present invention, the thin film transistor device 20 further includes a light shielding layer 27 , and the orthographic projection on the base substrate 1 includes the orthographic projection of the active layer 21 on the base substrate 1 . The light shielding layer 27 is located on a side of the active layer 21 away from the gate 22 . For example, the light shielding layer 27 is disposed on the side of the active layer 21 close to the base substrate 1 , and is located on the side of the base substrate 1 close to the active layer 21 . Of course, those skilled in the art can also arrange the light shielding layer 27 on the side of the base substrate 1 away from the active layer 21 as required. Improve the reliability of the photoelectric conversion unit.

According to another embodiment of the photodetection unit of the present invention, the gate 22 is located on the side of the active layer 21 close to the substrate 1 . For example, as shown in FIG. 5 , the thin film transistor device 20 of the photodetection unit has a bottom gate structure. The gate 22 is located on the side of the active layer 21 close to the substrate 1 . A gate insulating layer 25 is arranged on the gate 22, an active layer 21 is arranged on the gate insulating layer 25 of the thin film transistor device 20, and the active layer 21 is arranged on the same layer as the photoelectric conversion layer 31 of the photodetector device 30; the thin film transistor device The source 23 and the drain 24 are arranged on the active layer 21 of the 20, and are arranged on the same layer as the electrode layer 32 of the photodetection device 30. After forming the material layer, a patterning process is used to form the source 23, the drain 24 and the electrode layer 32. The pattern can further simplify the process. The electrode layer 32 includes a first electrode 321 and a second electrode 322, and the two electrodes are independent of each other. Meanwhile, the source electrode 23 and the first electrode 321 are configured to be electrically connected.

Optionally, according to the embodiment of the present invention, the thin film transistor device 20 further includes a light shielding layer 27 . The light shielding layer 27 is located on the side of the active layer 21 away from the gate 22 , and the orthographic projection on the base substrate 1 includes the orthographic projection of the active layer 21 on the base substrate 1 . For example, as shown in FIG. 5 , the light-shielding layer 27 is arranged on the side of the active layer 21 away from the base substrate 1 and above the first protective layer 4 for shielding the active layer 21 and preventing the semiconductor material of the active layer 21 from Received photons generate carriers.

According to another embodiment of the present invention, the gate 22 is located on the side of the active layer 21 close to the base substrate 1 . For example, as shown in FIG. 6 , the thin film transistor device 20 of the photodetection unit has a bottom gate structure. Wherein the gate 21 and the electrode layer 32 are arranged in the same layer, and a pattern including the gate 22 and the electrode layer 32 is formed by a patterning process after forming the material layer, which can further simplify the process. Wherein, the electrode layer 32 is located on the side of the photoelectric conversion layer 31 close to the base substrate 1 . The gate insulating layer 25 is located above the gate 21 , and the active layer 21 is disposed on the gate insulating layer 25 , and the active layer 21 is disposed on the same layer as the photoelectric conversion layer 31 on the electrode layer 32 . Optionally, the first protective layer 4 and/or the second protective layer 6 are transparent resin materials.

Optionally, the gate insulating layer 25 is made of a transparent resin material.

Optionally, the reflection layer 5 is a metal reflection layer.

Optionally, the width of the first strip electrodes 3211 and the second strip electrodes 3221 is set to be not less than 5 microns and not greater than 20 microns; the distance between the first strip electrodes 3211 and the second strip electrodes 3221 is set to Not less than 3 microns and not more than 10 microns.

Optionally, in order to realize functions such as insulation, buffering, and flatness, the photodetection unit according to the embodiment of the present invention may include a buffer layer located between the base substrate 1 and various functions formed thereon, such as the specific embodiment of the present invention The first insulating layer 26 in.

In the photodetection unit provided by the embodiment of the present invention, compared with the prior art, the active layer 21 and the photoelectric conversion layer 31 are arranged on the same layer, and the source electrode 23, the drain electrode 24 and the electrode layer 32 are arranged on the same layer, which simplifies the structure and simplifies the production. The process saves cost and time, and is conducive to the thinning of the photodetection unit and the equipment including the photodetection unit; the increase of the photosensitive area and aperture ratio is conducive to the improvement of photoelectric conversion efficiency.

It should be noted that the above are only specific implementation methods for thin-film transistors with part of the top-gate structure and part of the bottom-gate structure, and the protection scope of the embodiments of the present invention is not limited thereto. Within the scope of the technical field disclosed by the examples, other embodiments can be easily conceived or replaced without departing from the spirit and scope of the present invention, and should also be covered within the protection scope of the present invention.

According to an embodiment of the present invention, there is also provided a photoelectric detection device, as shown in FIG. 13 , which includes one less photodetection unit of any one of the above-mentioned implementation manners. For example, the photodetection device may include a plurality of the above-mentioned photodetection units arrayed on the photodetection substrate. The function of photodetection is realized by monitoring or detecting the electrical signal of the photodetection unit.

The invention also provides a manufacturing method of the photodetection unit. According to an embodiment of the present invention, a method for preparing a photodetection unit is provided, as shown in FIG. The first electrode and the second electrode S40 form a source and a drain S50. Wherein, forming the active layer and the photoelectric conversion layer S10 is formed through the same patterning process S11; for example, the photoelectric conversion layer 31 and the active layer 21 may be formed on the same semiconductor material layer through the same patterning process.

Wherein, forming the gate S20 , forming the gate insulating layer S30 , forming the first electrode and the second electrode S40 , and forming the source electrode and the drain electrode S50 can be completed by a patterning process, for example, can be formed by a patterning process.

Wherein, forming the active layer and the photoelectric conversion layer S10 may be, forming a semiconductor material layer on the base substrate 1, and then forming a pattern including the photoelectric conversion layer 31 and the active layer 21 through a patterning process; forming the gate S20 and forming The gate insulating layer S30 can be formed by forming a gate insulating layer material between the active layer 21 and the gate 32, and then forming a pattern containing the gate insulating layer 25 through a patterning process. Similarly, forming a pattern containing the gate 32 through a patterning process Forming the first electrode and the second electrode S40 may be, forming a pattern comprising the first electrode 321 and the second electrode 322 through a patterning process; forming the source electrode and the drain electrode S50 may be forming a pattern comprising the source electrode 23 and the drain electrode through a patterning process Pole 24 Graphics. The active layer 21 and the photoelectric conversion layer 31 are formed by one patterning process, which simplifies the process steps and is conducive to the thinning of the photodetection unit.

It should be noted that the steps and marks in the embodiments of the present invention do not represent a limitation on the implementation order of each step, but only serve as an identification. Those skilled in the art can perform the implementation order of each step according to the specific implementation mode of this specification. Adaptive adjustment.

According to another embodiment of the present invention, forming the active layer and the photoelectric conversion layer S10 further includes a first doping process S12, through which a first pattern 311 is formed;

According to another embodiment of the present invention, as shown in FIG. 8 , forming the active layer and the photoelectric conversion layer S10 further includes a second doping process S13, through which a second pattern 312 is formed;

Wherein, the doping types of the first doping process S12 and the second doping process S13 may be different.

According to the embodiment of the present invention, the patterning process of forming the first electrode 321 in step S40 is the same as the pattern of the mask plate used in the first doping process S12, so that the formed first electrode 321 and the first pattern 311 are formed on the substrate The orthographic projections on the substrate 1 overlap; similarly, the patterning process for forming the second electrode 322 in step S40 is the same as the pattern of the mask plate used in the second doping process S13, so that the formed second electrode 322 and the second The orthographic projections of the pattern 312 on the base substrate 1 are overlaid. Using the same mask pattern in different process steps further simplifies process steps and saves production cost.

According to an embodiment of the present invention, the first doping process S12 further includes forming an ohmic contact region 211 on the active layer 21 . The ohmic contact region 211 on the active layer 21 and the first pattern 311 on the photoelectric conversion layer 31 are formed through one doping process, which simplifies the process steps.

According to another embodiment of the present invention, the method for manufacturing a photodetection unit further includes forming a first protective layer S60 and forming a reflective layer S70. And, when the reflective layer is a metal material, the manufacturing method further includes forming a second protection layer S80.

According to the manufacturing method of the photodetection unit provided in another embodiment of the present invention, the formation of the gate S20 and the formation of the gate insulating layer S30 are completed after the formation of the active layer and the photoelectric conversion layer S10 . The formed thin film transistor device 20 of the photodetection unit has a top-gate structure. Wherein, forming the first electrode and the second electrode S40 can be completed through the same patterning process as forming the source electrode and the drain electrode S50 , as shown in FIG. 9 , the patterning process can be a patterning process. According to this manufacturing method, a photodetection unit as shown in FIG. 4 is formed.

Meanwhile, forming the first electrode and the second electrode S40 can be completed through the same patterning process as forming the gate S20 , as shown in FIG. 10 . For example, using the same patterning process to form the gate 22, the first electrode 321 and the second electrode 322, while simplifying the process, can reduce the difficulty of making the electrode material layer, reduce the step difference of film formation, and further improve the reliability of the process.

The method for manufacturing a photodetection unit according to another embodiment of the present invention may further include forming a light-shielding layer S90 , for example, forming a pattern including the light-shielding layer 27 through a patterning process. Wherein, the light shielding layer 27 is located on the side of the active layer 21 away from the gate 22 .

According to a method for manufacturing a photodetection unit provided in another embodiment of the present invention, the formation of the gate S20 and the formation of the gate insulating layer S30 are completed before the formation of the active layer and the photoelectric conversion layer S10, and the formed thin film transistor of the photodetection unit Device 20 is a bottom gate structure. Wherein, forming the first electrode and the second electrode S40 can be completed through the same patterning process as forming the source electrode and the drain electrode S50, as shown in FIG. 11 , and the structure of the formed photodetection unit is shown in FIG. 5 . Forming the first electrode and the second electrode S40 can be completed through the same patterning process as forming the gate S20 , as shown in FIG. 12 , and the structure of the formed photodetection unit is shown in FIG. 6 . Wherein, the first electrode 321 may be connected to the source electrode 23 through a via hole.

The manufacturing method of the photodetection unit provided by the present invention simplifies the manufacturing process by changing the relationship among various steps, and manufactures the photodetection unit with better performance by using relatively simple steps.

The above-mentioned embodiments are only exemplary implementations of the present invention, and the scope of protection of the embodiments of the present invention is not limited thereto. Anyone familiar with the technical field can easily think of The modifications, changes and substitutions should all fall within the protection scope of the embodiments of the present invention.

Claims (28)

1. A photoelectric detection unit, characterized in that, comprising: A base substrate, a thin film transistor device and a photodetector device disposed on the base substrate; Wherein, the thin film transistor device includes: an active layer, a gate, a gate insulating layer, a source and a drain; The photodetection device includes: a photoelectric conversion layer and an electrode layer; the electrode layer is in contact with the photoelectric conversion layer, and the electrode layer includes a first electrode and a second electrode that are independent of each other; and, The active layer and the photoelectric conversion layer are arranged in the same layer; the first electrode is electrically connected to the source. 2. The photodetection unit according to claim 1, wherein the first electrode is configured to include a plurality of first strip electrodes parallel to each other; the second electrode is configured to include a plurality of first strip electrodes parallel to each other. Two strip electrodes; the first strip electrodes and the second strip electrodes are alternately arranged at intervals. 3. The photodetection unit according to claim 2, wherein the photoelectric conversion layer comprises a first pattern formed by doping, and the orthographic projection of the first pattern on the base substrate is the same as that of the first strip The shape electrodes at least partially overlap. 4. The photodetection unit according to claim 3, wherein the photoelectric conversion layer further comprises a second pattern formed by doping, and the orthographic projection of the second pattern on the base substrate is the same as that of the The second strip electrodes are at least partially overlapped. 5. The photodetection unit according to claim 4, wherein the doping types of the first pattern and the second pattern are different. 6 . The photodetection unit according to claim 1 , wherein the photodetection unit further comprises a first protection layer located on a side of the thin film transistor device and the photodetection device away from the substrate. 7. The photodetection unit according to claim 1, wherein the thin film transistor device further comprises a light-shielding layer, the light-shielding layer is located on the side of the active layer away from the gate, and the light-shielding layer is on the The orthographic projection on the base substrate includes the orthographic projection of the active layer on the base substrate. 8. The photodetection unit according to claim 1, wherein the active layer comprises an active region and an ohmic contact region formed by doping. 9. The photodetection unit according to claim 1, wherein the first electrode is a transparent conductor, and/or the second electrode is a transparent conductor. 10 . The photodetection unit according to claim 1 , further comprising a reflective layer disposed on a side of the photoelectric conversion layer close to the substrate. 11 . 11. The photodetection unit according to claim 1, wherein the reflective layer is made of a metal material, and the photodetector unit further comprises a second layer disposed between the reflective layer and the photoelectric conversion layer Two protective layers, the second protective layer is made of insulating material. 12. The photodetection unit according to any one of claims 1 to 11, wherein the gate is located on the side of the active layer away from the base substrate, or the gate is located on the side of the active layer layer close to the base substrate side. 13 . The photodetection unit according to claim 12 , wherein the electrode layer is arranged in the same layer as the source electrode and the drain electrode. 14 . 14 . The photodetection unit according to claim 12 , wherein the electrode layer is arranged in the same layer as the gate. 15. A photoelectric detection device, comprising the photoelectric detection unit according to any one of claims 1 to 14. 16. A method for manufacturing a photodetection unit according to claim 1, wherein the method for manufacturing a photodetection unit comprises: Forming an active layer and a photoelectric conversion layer; forming a gate; forming a gate insulating layer; forming a first electrode and a second electrode; forming a source electrode and a drain electrode; Wherein, the forming the active layer and the photoelectric conversion layer includes forming the active layer and the photoelectric conversion layer through one patterning process. 17. The method for manufacturing a photodetection unit according to claim 16, wherein the forming the active layer and the photoelectric conversion layer further comprises forming a first pattern on the photoelectric conversion layer through a first doping process . 18. The method for manufacturing a photodetection unit according to claim 17, wherein said forming the active layer and the photoelectric conversion layer further comprises forming a second pattern on the photoelectric conversion layer through a second doping process . 19 . The method for manufacturing a photodetection unit according to claim 18 , wherein the doping types of the doping process used for forming the first pattern and the doping process used for forming the second pattern are different. 20. The manufacturing method of the photodetection unit according to claim 19, characterized in that, the manufacturing method of the photodetection unit further comprises, the patterning process for forming the first electrode and the first doping process used The mask pattern is the same; the patterning process for forming the second electrode is the same as the mask pattern used in the second doping process. 21. The method for manufacturing a photodetection unit according to claim 17, wherein the first doping process further comprises forming an ohmic contact region on the active layer through the first doping process. 22 . The method for manufacturing a photodetection unit according to claim 16 , further comprising: forming a first protection layer above the thin film transistor device and the photodetection device. 23 . The method for manufacturing a photodetection unit according to claim 16 , further comprising: forming a reflective layer on the base substrate. 24 . 24. The manufacturing method of the photodetection unit according to claim 23, wherein the material of the reflective layer is metal; the manufacturing method of the photodetective unit further comprises, between the reflective layer and the photoelectric conversion layer A second protective layer is formed between them, and the second protective layer is an insulating material. 25. The manufacturing method of the photodetection unit according to claim 16, characterized in that, the manufacturing method of the photodetection unit further comprises forming a light-shielding layer on the side of the active layer away from the gate, the The orthographic projection of the light shielding layer on the base substrate includes the orthographic projection of the active layer on the base substrate. 26. The method for manufacturing a photodetection unit according to any one of claims 16 to 25, wherein the formation of the gate is completed after the formation of the active layer and the photoelectric conversion layer, or the formation of the gate The electrode is completed before the formation of the active layer and the photoelectric conversion layer. 27 . The method for manufacturing a photodetection unit according to claim 26 , wherein the forming of the first electrode and the second electrode is completed simultaneously with the forming of the source electrode and the drain electrode. 28. The method for manufacturing a photodetection unit according to claim 26, wherein the forming of the first electrode and the second electrode is completed simultaneously with the forming of the gate.