CN108226624A - Current sensor and electric current inducing method - Google Patents
Current sensor and electric current inducing method Download PDFInfo
- Publication number
- CN108226624A CN108226624A CN201810029356.6A CN201810029356A CN108226624A CN 108226624 A CN108226624 A CN 108226624A CN 201810029356 A CN201810029356 A CN 201810029356A CN 108226624 A CN108226624 A CN 108226624A
- Authority
- CN
- China
- Prior art keywords
- voltage
- transistor
- resistance
- current
- electric current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
The present invention provides a kind of current sensor and electric current inducing method.Current sensor includes：1st voltage supply circuit from external input bias current, and receives input voltage, exports the 1st voltage；2nd voltage supply circuit receives the input voltage, exports the 2nd voltage；Current supply circuit is connect with the both ends of external induced electricity group, receives the 1st voltage and the 2nd voltage, exports the 1st electric current and the 2nd electric current；Voltage generation circuit receives the 1st electric current and the 2nd electric current, the 1st control voltage of generation and the 2nd control voltage；And gain control circuit, the 1st control voltage and the 2nd control voltage are received, output is used for the voltage of external analog-digital converter.
Description
Technical field
The present invention relates to a kind of current sensor not influenced by input voltage and electric current inducing methods.
Background technology
In wireless charging system, only accurately sense the load current under input voltage, could realize FOD (Foreign
Objects Detection, external object detection) etc. functions.The current sensor for having this function is small outside
Resistive element flows through the electric current of the resistive element to sense.
Fig. 1 is the schematic diagram for representing current sense.It is commonly used for current sensor in wireless charging system its input electricity
It is usually 4.5~21V to press range, that is, is worked under very wide input voltage.Therefore, this current sensor is needed and is inputted
Voltage independently senses electric current.
Current sensor senses the voltage at the non-essential resistance both ends to sense the electric current flowed through on non-essential resistance, so as to
By the control source proportional to the voltage to analog-digital converter.For current sensor, input more than 20V's sometimes
High voltage, therefore need to ensure that the terminal voltage of internal each constituent element does not exceed element internal pressure during work.
As shown in Figure 1, utilize non-essential resistance RSENSEAfter sensing electric current, which is input to analog-digital converter
(ADC：Analog-to-Digital Converter, hereinafter referred to as ADC), which transmits data to digital circuit.As above
Described, its input voltage range of the current sensor being commonly used in wireless charging system is usually 4.5~21V, corresponding electricity
Flow ILOADRange be 0~3A, it is seen that the current value is larger, be accordingly used in sensing non-essential resistance RSENSEResistance value need to be compared with
It is small.Usually using the non-essential resistance of 20~30m Ω.For example, when non-essential resistance is 20m Ω, flow through 0 on the non-essential resistance~
The electric current of 3A and the pressure drop that generates is 0~60mV.The pressure drop need to be amplified to the voltage range of suitable ADC by current sensor.
In general, ADC using operating voltage be 5V or 3V lower voltage components in operating at voltages relatively low 3V etc..According to reality
Existing method, can also realize under the lower voltage such as 1.8V or 1.2V.In contrast, the model of the input voltage of current sensor
It is 4.5~21V to enclose, it is therefore desirable to be realized using the high voltage devices of the internal pressure with more than 20V.
Fig. 2 is the circuit diagram for representing current sensor of the prior art.As shown in Fig. 2, the current sensor include by
The divider that multiple resistance are formed and the gain controller being made of amplifier, by resistance RSENSEThe voltage at both ends is divided
Pressure, so as to which its result is input to gain controller.Gain controller uses low operating voltage VDD.For example, work as input voltage
VIN=21V, VDDDuring=3V, divider needs voltage dropping to the range that gain controller can input, i.e., less than VDDElectricity
Pressure.It has input less than VDDThe gain controller of voltage need to provide the voltage that it is inputted appropriate gain, it is suitable so as to be transformed into
Close the voltage needed for ADC.
21V is inputted relative to maximum, due to the input range no more than gain controller, according to about 1/7 ratio
Example is divided, and in the case of such as input voltage is 5V, it is also divided according to 1/7 ratio and inputs low voltage
When, there are problems that resolution ratio reduction.In actual conditions, the input electricity down to the amplifier of gain controller by voltage drop is needed
The range of pressure, therefore usually using 1/9~1/8 ratio (because 21 × 1/9 ≈ 2.333V).Following mathematical expression can then be obtained
(1) relationship.
If the input range of ADC is 1.8V, in order to by the induced voltage (R of 60mVSENSEThe voltage at both ends) it is transformed into
1.8V needs 30 times of gain.As shown in above-mentioned mathematical expression (1), due in the current sensor of the prior art, VOUTP-VOUTNWith
About 0.111 times of gain is by VINP-VINNIt reduces, therefore gain controller needs to provide 30 times/0.111 times=270 times of gain,
It is 20 × log to be converted into decibel10(270)=48.6dB.This is because current sensor cannot provide gain at the beginning,
Instead 20 × log is given due to the 0.111 of above-mentioned mathematical expression (1)10(0.111) gain of=- 19dB.
Invention content
The present invention in view of the foregoing and complete, and it is an object of the present invention to provide it is a kind of using high voltage devices in wide input voltage
Faradic current sensor can not be influenced under range by input voltage.
An aspect of of the present present invention is related to current sensor, including：1st voltage supply circuit, from external input bias current,
And input voltage is received, exports the 1st voltage；2nd voltage supply circuit receives the input voltage, exports the 2nd voltage；Electricity
Supply circuit is flowed, is connect with the both ends of external induced electricity group, receives the 1st voltage and the 2nd voltage, the 1st electricity of output
Stream and the 2nd electric current；Voltage generation circuit receives the 1st electric current and the 2nd electric current, the 1st control voltage of generation and the 2nd control
Voltage processed；And gain control circuit, the 1st control voltage and the 2nd control voltage are received, output is for external modulus
The voltage of converter.
Preferably, the 1st voltage supply circuit includes：At least one 1st transistor, the 1st end receive the input
Voltage, grid connect together with the 2nd end；And mirror current source, the bias current is inputted, to the grid of the 1st transistor
The 1st voltage is provided, the 2nd voltage supply circuit includes：Diode, cathode are connect with the input voltage, and anode is defeated
Go out the 2nd voltage, the current supply circuit include being connected to two the 1st resistance at the both ends of the induced electricity group with
And the 2nd~the 5th transistor, wherein, the grid of the 2nd transistor and the 3rd transistor links together input the 1st electricity
The grid of pressure, the 4th transistor and the 5th transistor, which links together, inputs the 2nd voltage, and the 1st of the 2nd transistor the
End is connect with one end of the 1st resistance of a side, and the 2nd end of the 2nd transistor is connect with the 1st end of the 4th transistor, described
1st end of the 3rd transistor is connect with one end of the 1st resistance of the opposing party, the 2nd end and the 5th transistor of the 3rd transistor
The connection of the 1st end, the voltage generation circuit includes：The 2nd resistance of a side being connect with the 2nd end of the 4th transistor；With institute
State the 2nd resistance of the opposing party of the 2nd end connection of the 5th transistor；The 3rd resistance being connected in series with the 2nd resistance of the party；With with
The biasing resistor that the 2nd resistance of the opposing party is connected in series with, the gain control circuit include：Amplifier, non-inverting input
It is connected between the 2nd resistance of the party and the 3rd resistance, input the 1st control voltage, inverting input is connected to institute
It states between the 2nd resistance of the opposing party and the biasing resistor, input the 2nd control voltage, output terminal and the analog-digital converter
Connection.
Preferably, the mirror current source is made of High voltage NMOS transistor, the 4th transistor and the 5th crystal
Pipe is high voltage PMOS transistor.
Preferably, the gain control circuit is additionally included in the low-pass filter of the prime setting of the amplifier.
Preferably, the 1st~the 3rd transistor is low voltage PMOS transistor.
Preferably, the 2nd voltage supply circuit further includes：The 4th resistance being connect with the Diode series and the 5th electricity
Resistance；It is High voltage NMOS transistor with the 6th transistor, the 1st end is connect with one end of the 5th resistance, grid and the mirror image
Current source connects, the 2nd end ground connection.
Preferably, the 1st voltage supply circuit further includes：6th resistance, be connected to the 2nd end of the 1st transistor with
Between the mirror current source.
Another aspect of the present invention relates to a kind of electric current inducing methods, include the following steps：1st voltage supply circuit is from outer
Portion's input bias current, and input voltage is received, export the 1st voltage；2nd voltage supply circuit receives the input voltage,
Export the 2nd voltage；The current supply circuit for being connected to the both ends of external induced electricity group receives the 1st voltage and the described 2nd
The electric current of the induced electricity group is flowed through in voltage, sensing, exports the 1st electric current and the 2nd electric current；Voltage generation circuit receives the described 1st
Electric current and the 2nd electric current, the 1st control voltage of generation and the 2nd control voltage；The 1st control is received with gain control circuit
Voltage and the 2nd control voltage, output are used for the voltage of external analog-digital converter.
The present invention current sensor do not influenced by input voltage, can realize, gain unrelated with input voltage and
Sense the constant current sensor of result.In addition, compared with prior art, since the gain of the prime of current sensor is larger,
Therefore the high current sensor of accuracy can be realized.
Description of the drawings
Fig. 1 is the schematic diagram for representing current sense.
Fig. 2 is the circuit diagram for representing current sensor of the prior art.
Fig. 3 is the block diagram for representing the current sensor of the present invention.
Fig. 4 is the circuit diagram for the current sensor for representing Fig. 3.
Fig. 5 is the circuit diagram for the variation for representing current sensor.
Fig. 6 is the flow chart for representing electric current inducing method.
Specific embodiment
In the following description, specific structure and explanation carry out schematic just for the sake of being easier to understand the present invention
Illustrate, the present invention can be implemented in various ways, however it is not limited to the mode that this specification is recorded.In addition, without departing from the present invention
Technological thought in the range of, can to the present invention implement it is various change, improvement etc., these change, improvement etc. be all contained in this hair
In bright protection domain.
In addition, the terms such as " the 1st " that uses in the following description, " the 2nd " can be explained specific inscape, but these
Term does not limit these inscapes.These terms are only used for distinguishing each integral part.
Hereinafter, it is explained with reference to the specific embodiment of the present invention.
Fig. 3 is the block diagram for representing the current sensor of the present invention.As shown in figure 3, current sensor 10 is supplied including the 1st voltage
To circuit 1, the 2nd voltage supply circuit 2, current supply circuit 3, voltage generation circuit 4 and gain control circuit 5.
As shown in figure 3, the 1st voltage supply circuit 1 is from external input bias current IBIAS, and receive input voltage VIN, it is defeated
Go out the 1st voltage VBP1.2nd voltage supply circuit 2 also receives input voltage VIN, export the 2nd voltage VBP2.Current supply circuit 3 connects
Receive the 1st voltage VBP1With the 2nd voltage VBP2, to induced electricity group RSENSEThe electric current at both ends is sensed, and exports the 1st electric current I1With the 2nd
Electric current I '2.Voltage generation circuit 4 inputs the 1st electric current I1With the 2nd electric current I '1, the 1st control voltage V of generationOUTPWith the described 2nd
Control voltage VOUTN.The 1st control voltage V of the input of gain control circuit 5OUTPWith the described 2nd control voltage VOUTN, export and be suitble to
In the voltage of ADC.
Fig. 4 is the circuit diagram for the current sensor for representing Fig. 3.As shown in figure 4, the 1st voltage supply circuit 1 includes：By crystalline substance
The mirror current source that body pipe MN0~MN3 is formed；It is serially connected in transistor MP0, MP1 of diode；And resistance R6.
2nd voltage supply circuit 2 includes diode D0, resistance R4, R5 and transistor MN4.Current supply circuit 3 includes two resistance
R1 and transistor MP2~MP5.Voltage generation circuit 4 is included by two resistance R2, resistance R3 and biasing resistor ROFFSETIt forms
Divider.Gain control circuit 5 includes amplifier 51.Biasing resistor ROFFSETIt can be produced in calibration-gain control circuit 5 or ADC
Raw offset voltage, such as realized by way of resistance value can be changed receiving digital signal.
Specifically, transistor MP0 and transistor MP1 are serially connected in diode, the 1st end (source of transistor MP0
Pole) and input voltage VINBe connected, the 2nd end (drain electrode) of transistor MP1 is connected with one end of resistance R6, the other end of resistance R6 and
It is connected by transistor MN0~MN3 mirror current sources formed.The cathode of diode D0 and input voltage VINConnection, anode and electricity
Resistance R4 is connected with one end being connected in series with of R5, and the other end of resistance R5 is connected with the 1st end (drain electrode) of transistor MN4, crystal
The grid of the grid of pipe MN4 and MN0, MN2 of mirror current source connect together.Two resistance R1 are connected in induced electricity group in parallel
RSENSEBoth ends, transistor MP2 and MP3 common gate connection, input the 1st voltage VBP1, transistor MP4 and MP5 also common gate connection is defeated
Enter the 2nd voltage VBP2, the 1st end (source electrode) of transistor MP2 connect with one end of resistance R1, the 2nd end (drain electrode) and transistor
The 1st end (source electrode) connection of MP4, the connection of transistor MP3 and MP5 are also identical.Resistance R2 is connected in series with resistance R3, separately
One resistance R2 and biasing resistor ROFFSETBe connected in series with, in two resistance R2, one with the 2nd end (drain electrode) of transistor MP4
Connection, another connect with the 2nd end (drain electrode) of transistor MP5, the 1st control of node OUTP outputs between resistance R2 and resistance R3
Voltage V processedOUTP, another resistance R2 and biasing resistor ROFFSETBetween the 2nd control voltage V of node OUTN outputsOUTN.Amplifier
Non-inverting input receive the 1st control voltage VOUTP, the 2nd control voltage V of inverting input receptionOUTN, the output of amplifier with
The input of external ADC is connected.
Here, NMOS transistor MN0~MN3, MN4, PMOS transistor MP4 and MP5 are the high voltage transistor (high of 20V
Voltage Transistor), remaining PMOS transistor MP0~MP3 is the low voltage transistor of 3V or 5V.
In the 1st voltage supply circuit 1, by the mirror current source that transistor MN0~MN3 is formed from external input biased electrical
Flow IBIAS(such as size can be 5~10 μ A) generates the 1st voltage VBP1.1st voltage VBP1Size depending on diode connect
The channel width and length of transistor MP0, MP1 for connecing.
In current supply circuit 3, transistor MP2 and MP3 carry out source and follow action (source follower), crystal
The 1st end (source electrode) voltage of pipe MP2 and MP3 are VBP1-VTH_P(VTH_PIt is the threshold voltage of PMOS transistor, is negative value).Assuming that
The range of input voltage is 4.5~21V, induced electricity group RSENSE=20m Ω, ILOADRange be 0~3A, then in RSENSEIt produces at both ends
The pressure drop of raw 0~60mV, therefore the electric current flowed through on two resistance R1 can difference.The electric current by transistor MP4 and
In resistance R3 and R after MP5OFFSETUpper generation voltage.Following mathematical expressions (2) can be obtained by arranging the process.
It follows that VOUTP-VoUTNGain with R3/R1.For example, flow through the electric current I of resistance R33With flow through biased electrical
Hinder ROFFSETElectric current I '3During about 10 μ A, R1=100K Ω, R3=250K Ω, Gain=R3/R1=2.5 in mathematical expression (2).
At this point, VOUTP、VOUTNAbout 2.5V.
Therefore, compared with the gain of the prior art 0.111, approximately more than 22.5 (2.5/0.111 ≈ 22.5) times can be obtained
Big signal.Since the gain of most prime accounts for the major part of entire signal-to-noise ratio (SNR), which influences entire electric current and passes
The performance of sensor.Also, the gain to provide the input voltage for being suitable for ADC is also down to 21.6dB from the 48.6dB of the prior art
(30 times/2.5 times=12 times, be equivalent to 21.6dB).Therefore, it is possible to which the gain of gain control circuit 5 is greatly reduced, can realize
More preferably stable circuit.
Fig. 5 is the circuit diagram for the variation for representing current sensor.Compared with the current sensor 10 of Fig. 4, the electric current of Fig. 5
The gain control circuit 5 ' of sensor 10 ' further includes low-pass filter 61.Therefore, the current sensor of Fig. 5 being capable of filter high-frequency
Noise, so as to improve the signal-to-noise ratio of device.Low-pass filter 61 can form passive filter by resistance and capacitance,
It can be the active filter for further including amplifier.
In addition, in figures 4 and 5, in order to provide the 1st voltage VBP1, two PMOS transistors (MP0 and MP1) are connected and are connected
Diode has been connected into, but a PMOS transistor can also be used only.If the electric current for flowing through two resistance R1 is I1、I
′1, then electric current I1、I′1By the 1st voltage VBP1Determined with the resistance value of R1, current flowing resistance R3 and form the 1st control
Voltage VOUTP, i.e. VOUTP(≈VOUTN)=I1× R3, and the voltage is the input voltage of gain control circuit 5, therefore is less than work
Make voltage VDD.Appropriate adjustment VBP1, R1 and R3 size, the Gain of maximum mathematical expression (2) can be obtained.
In addition, it is a further feature of this invention that current sensor 10 independently senses electric current with input voltage.As more than
Illustrate, the transistor MP4 and MP5 in Fig. 4, Fig. 5 are the high voltage transistors of 20V, therefore the dram-source voltage of these transistors
VDSVery wide range can be covered.When input voltage is big, VDSBecome larger, and input voltage hour, VDSBecome smaller, result flows through resistance
R3 and ROFFSETElectric current will not change due to input voltage.Therefore, the Gain of mathematical expression (2) is not by the shadow of input voltage
It rings, is able to maintain that certain numerical value, the numeral output of result ADC will not be influenced by input voltage.
The dram-source voltage V of high voltage transistorDSCan be very big, but some of which element cannot input it is higher
Grid-source voltage VGS.For example, the DEMOS pipes (Drain-extended MOS) of 20V or the LDMOS pipes (Laterally of 20V
Diffused MOS) in the case of, VDSReachable 20V, but VGsRange be 5~6V.The present invention high voltage transistor can be
DEMOS is managed, and however, it is not limited to this can also utilize other elements.
In addition, diode D0 provides the grid voltage V of transistor MP4 and MP5BP2, can be Zener diode, have about
The breakdown voltage of 6V, therefore the grid-source voltage V of transistor MP4 and MP5 can be preventedGSExcessively become larger.
In addition, in the present invention, resistance R4, R5 and R6 play the role of stabling current, size for example can be hundreds of k
Ω can be selected suitably according to the demand of user.These resistive elements can improve the stability of system, even if but being not provided with this
A little resistance will not influence the action of current sensor.In addition, transistor MN4 forms the current path via resistance R5 so that
Diode D0 works, when current sensor does not work, i.e. IBIASWhen=0, the grid voltage of transistor MN4 also becomes zero, because
This can eliminate the leakage current flowed through via diode D0.But even if electric current biography will not be influenced by being not provided with transistor MN4
The action of sensor.In addition, bias current IBIASSuch as can be 5~10 μ A, it can suitably select according to the demand of user.
Fig. 6 is the flow chart for representing electric current inducing method.As shown in fig. 6, the 1st voltage supply circuit 1 is inclined from external input
Put electric current IBIAS, and receive input voltage VIN, export the 1st voltage VBP1.Then, the 2nd voltage supply circuit 2 receives input electricity
Press VIN, export the 2nd voltage VBP2.Then, it is connected to external induced electricity group RSENSEThe current supply circuit 3 at both ends receive the
1 voltage VBP1With the 2nd voltage VBP2, sense and flow through induced electricity group RSENsEElectric current, export the 1st electric current I1With the 2nd electric current I '1。
Voltage generation circuit 4 receives the 1st electric current I1With the 2nd electric current I '1, the 1st control voltage V of generationOUTPWith the 2nd control voltage VOUTN.Increase
Beneficial control circuit 5 receives the 1st control voltage VOUTPWith the 2nd control voltage VOUTN, export for the voltage of external ADC.
More than, embodiments of the present invention are described in detail, but the present invention is not limited to above embodiment, at this
Change, improvement for being carried out in the range of the technological thought of invention etc. are within protection scope of the present invention.
Claims (8)
1. a kind of current sensor, including：
1st voltage supply circuit from external input bias current, and receives input voltage, exports the 1st voltage；
2nd voltage supply circuit receives the input voltage, exports the 2nd voltage；
Current supply circuit is connected to the both ends of external induced electricity group, receives the 1st voltage and the 2nd voltage, output
1st electric current and the 2nd electric current；
Voltage generation circuit receives the 1st electric current and the 2nd electric current, the 1st control voltage of generation and the 2nd control voltage；With
Gain control circuit receives the 1st control voltage and the 2nd control voltage, and output is for external analog-to-digital conversion
The voltage of device.
2. current sensor according to claim 1, wherein,
1st voltage supply circuit includes：At least one 1st transistor, the 1st end receive the input voltage, grid with
2nd end connects together；And mirror current source, the bias current is inputted, the described 1st is provided to the grid of the 1st transistor
Voltage,
2nd voltage supply circuit includes：Diode, cathode are connect with the input voltage, anode output the 2nd electricity
Pressure,
The current supply circuit includes two the 1st resistance and the 2nd~the 5th for being connected to the both ends of the induced electricity group
Transistor, wherein, the grid of the 2nd transistor and the 3rd transistor, which links together, inputs the 1st voltage, and the described 4th is brilliant
The grid of body pipe and the 5th transistor, which links together, inputs the 2nd voltage, the 1st end and the side the 1st of the 2nd transistor
One end connection of resistance, the 2nd end of the 2nd transistor are connect with the 1st end of the 4th transistor, the 3rd transistor
1st end is connect with one end of the 1st resistance of the opposing party, and the 2nd end of the 3rd transistor connects with the 1st end of the 5th transistor
It connects,
The voltage generation circuit includes：The 2nd resistance of a side being connect with the 2nd end of the 4th transistor；With the described 5th crystalline substance
The 2nd resistance of the opposing party of the 2nd end connection of body pipe；The 3rd resistance being connected in series with the 2nd resistance of the party；With with it is described another
The biasing resistor that the 2nd resistance of one side is connected in series with,
The gain control circuit includes：Amplifier, non-inverting input are connected to the 2nd resistance of the party and the described 3rd electricity
Between resistance, input the 1st control voltage, inverting input be connected to the 2nd resistance of the opposing party and the biasing resistor it
Between, input the 2nd control voltage, output terminal is connect with the analog-digital converter.
3. current sensor according to claim 2, wherein,
The mirror current source is made of High voltage NMOS transistor, and the 4th transistor and the 5th transistor are high voltage PMOSs
Transistor.
4. current sensor according to claim 3, wherein,
The gain control circuit is additionally included in the low-pass filter of the prime setting of the amplifier.
5. current sensor according to claim 4, wherein,
1st~the 3rd transistor is low voltage PMOS transistor.
6. the current sensor according to any one of claim 2~5, wherein,
2nd voltage supply circuit further includes：The 4th resistance and the 5th resistance being connect with the Diode series；With the 6th crystalline substance
Body pipe is High voltage NMOS transistor, and the 1st end is connect with one end of the 5th resistance, and grid connects with the mirror current source
It connects, the 2nd end ground connection.
7. current sensor according to claim 6, wherein,
1st voltage supply circuit further includes：6th resistance is connected to the 2nd end of the 1st transistor and mirror image electricity
Between stream source.
8. a kind of electric current inducing method, includes the following steps：
1st voltage supply circuit receives input voltage from external input bias current, exports the 1st voltage；
2nd voltage supply circuit receives the input voltage, exports the 2nd voltage；
The current supply circuit for being connected to the both ends of external induced electricity group receives the 1st voltage and the 2nd voltage, sensing
The electric current of the induced electricity group is flowed through, exports the 1st electric current and the 2nd electric current；
Voltage generation circuit receives the 1st electric current and the 2nd electric current, the 1st control voltage of generation and the 2nd control voltage；With
Gain control circuit receives the 1st control voltage and the 2nd control voltage, and output is for external analog-digital converter
Voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810029356.6A CN108226624B (en) | 2018-01-11 | 2018-01-11 | Current sensor and current sensing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810029356.6A CN108226624B (en) | 2018-01-11 | 2018-01-11 | Current sensor and current sensing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108226624A true CN108226624A (en) | 2018-06-29 |
| CN108226624B CN108226624B (en) | 2024-08-02 |
Family
ID=62641060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810029356.6A Active CN108226624B (en) | 2018-01-11 | 2018-01-11 | Current sensor and current sensing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108226624B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1590967A (en) * | 2003-09-03 | 2005-03-09 | 精工爱普生株式会社 | Sensing services and sensing circuits |
| CN101169671A (en) * | 2006-10-24 | 2008-04-30 | 松下电器产业株式会社 | Reference voltage generation circuit |
| JP2009008548A (en) * | 2007-06-28 | 2009-01-15 | Toshiba Corp | Printed circuit board and electronic apparatus |
| CN101556821A (en) * | 2008-04-07 | 2009-10-14 | 晶豪科技股份有限公司 | Voltage regulator for semiconductor memory |
| KR20100051414A (en) * | 2008-11-07 | 2010-05-17 | 한국전자통신연구원 | Apparatus and method for measuring current of battery operated systems |
| CN102426285A (en) * | 2011-09-14 | 2012-04-25 | 深圳航天科技创新研究院 | Current sensor for bidirectional current sampling |
| CN104918359A (en) * | 2014-03-14 | 2015-09-16 | 株式会社小糸制作所 | Vehicle lamp and vehicle lamp driving device |
| CN106253870A (en) * | 2016-07-19 | 2016-12-21 | 电子科技大学 | A kind of high-gain trans-impedance amplifier with automatic growth control |
| CN106597077A (en) * | 2016-12-28 | 2017-04-26 | 深圳市航天新源科技有限公司 | Current measurement circuit and method |
| CN106841734A (en) * | 2016-12-27 | 2017-06-13 | 深圳市沃特玛电池有限公司 | A kind of current sensor and electric current detecting method based on current divider |
| CN207908576U (en) * | 2018-01-11 | 2018-09-25 | 江西联智集成电路有限公司 | Current sensor |
-
2018
- 2018-01-11 CN CN201810029356.6A patent/CN108226624B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1590967A (en) * | 2003-09-03 | 2005-03-09 | 精工爱普生株式会社 | Sensing services and sensing circuits |
| CN101169671A (en) * | 2006-10-24 | 2008-04-30 | 松下电器产业株式会社 | Reference voltage generation circuit |
| JP2009008548A (en) * | 2007-06-28 | 2009-01-15 | Toshiba Corp | Printed circuit board and electronic apparatus |
| CN101556821A (en) * | 2008-04-07 | 2009-10-14 | 晶豪科技股份有限公司 | Voltage regulator for semiconductor memory |
| KR20100051414A (en) * | 2008-11-07 | 2010-05-17 | 한국전자통신연구원 | Apparatus and method for measuring current of battery operated systems |
| CN102426285A (en) * | 2011-09-14 | 2012-04-25 | 深圳航天科技创新研究院 | Current sensor for bidirectional current sampling |
| CN104918359A (en) * | 2014-03-14 | 2015-09-16 | 株式会社小糸制作所 | Vehicle lamp and vehicle lamp driving device |
| CN106253870A (en) * | 2016-07-19 | 2016-12-21 | 电子科技大学 | A kind of high-gain trans-impedance amplifier with automatic growth control |
| CN106841734A (en) * | 2016-12-27 | 2017-06-13 | 深圳市沃特玛电池有限公司 | A kind of current sensor and electric current detecting method based on current divider |
| CN106597077A (en) * | 2016-12-28 | 2017-04-26 | 深圳市航天新源科技有限公司 | Current measurement circuit and method |
| CN207908576U (en) * | 2018-01-11 | 2018-09-25 | 江西联智集成电路有限公司 | Current sensor |
Non-Patent Citations (1)
| Title |
|---|
| 姜梅 等: "一种片上集成低压高精度电流检测电路", 微电子学, vol. 38, no. 5, 20 October 2008 (2008-10-20), pages 688 - 690 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108226624B (en) | 2024-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202995523U (en) | Linear dropout regulator (LDO) with ultra-low power consumption and without output filtering capacitor | |
| CN105242734B (en) | A kind of high power LD O circuit without external electric capacity | |
| CN104571242B (en) | Voltage regulator | |
| CN101373902A (en) | Charge-up circuit and method for adjusting charge-up current | |
| CN105991094B (en) | Summing amplifier and its method | |
| CN107209528B (en) | Band gap voltage generates | |
| CN104423408B (en) | Manostat | |
| CN104881070B (en) | A kind of super low-power consumption LDO circuit being applicable to MEMS application | |
| CN107750351A (en) | Voltage regulator | |
| CN106647915B (en) | A kind of low pressure difference linear voltage regulator using digital circuit compensating electric capacity | |
| CN107666294A (en) | Amplifying circuit | |
| CN208351364U (en) | A kind of linear voltage-stabilizing circuit | |
| CN205540381U (en) | Accurate excess temperature protection circuit of current feedback formula | |
| CN104516385B (en) | Voltage regulator | |
| KR101362474B1 (en) | Cmos subbandgap reference | |
| CN107066024A (en) | A kind of low power consumption high-precision non-bandgap reference voltage source | |
| CN103795363A (en) | Electronic circuit with unit for attenuating at least one input signal of an amplifier in an automatic gain control loop | |
| CN106227287B (en) | Low pressure difference linear voltage regulator with protection circuit | |
| CN107276396A (en) | Negative pressure charge pump | |
| CN106959718A (en) | Adjuster | |
| CN108226624A (en) | Current sensor and electric current inducing method | |
| CN107193317A (en) | Voltage-stablizer | |
| CN207908576U (en) | Current sensor | |
| TWI508437B (en) | Voltage adjusting circuit for amplifier circuit and method thereof | |
| JP2007187558A (en) | Temperature detection circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |