CN108206129A - A kind of cleaning method after chemical mechanical grinding - Google Patents
A kind of cleaning method after chemical mechanical grinding Download PDFInfo
- Publication number
- CN108206129A CN108206129A CN201611187148.6A CN201611187148A CN108206129A CN 108206129 A CN108206129 A CN 108206129A CN 201611187148 A CN201611187148 A CN 201611187148A CN 108206129 A CN108206129 A CN 108206129A
- Authority
- CN
- China
- Prior art keywords
- wafer
- chemical mechanical
- mechanical grinding
- crystal column
- column surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides the cleaning method after a kind of chemical mechanical grinding, includes the following steps：The wafer to be cleaned after chemical mechanical grinding is provided, the wafer has the step of copper of insulating layer and filling in the opening equipped with opening, the chemical mechanical grinding for removing the copper on the insulating layer；Rinse the wafer by the use of the mixed solution comprising copper sulphate and hydrogen peroxide as cleaning solution, with remove the crystal column surface because of organic matter caused by the chemical mechanical grinding.Cleaning method according to the present invention, crystal column surface is rinsed by copper sulphate and hydrogen peroxide, by in chemical mechanical milling tech in the remaining organic matter removal of the crystal column surface, improve the chemical residual defect in cleaning process, and the remaining particle in part is removed, and then improve the yield of chemical mechanical grinding product.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular to the cleaning side after a kind of chemical mechanical grinding
Method.
Background technology
With the rapid development of super large-scale integration (ULSI, Ultra Large Scale Integration), collection
It becomes increasingly complex and finely into what circuit manufacturing process became.In order to improve integrated level, manufacture cost, the characteristic size of element are reduced
Constantly become smaller, the number of elements in chip unit area is continuously increased, and plane routing has been difficult to meet the distribution of element high density
It is required that can only use polylaminate wiring technique utilize chip vertical space, and between multilayer wiring realize metal interconnection, with into
One step improves the integration density of device.Copper has been substituted aluminium as the mainstream interconnection technique in super large-scale integration manufacture.
In general, copper wiring dual-damascene technics generally includes following steps：First, one is deposited on the wafer with semiconductor devices
Determine the insulating layer of thickness, then etch the insulating layer and form the groove for being used for mosaic technology, then, by electroplating technology in institute
It states and metallic copper is filled up in groove, finally utilize chemical mechanical grinding (CMP, Chemical Mechanical Polishing)
Mode planarizing surface of wafer.
Chemical mechanical grinding is to occur to chemically react to change with finished surface using the chemical solution for being mixed with minimum abrasive grain
The chemical bond on its surface, the product that generation easily mechanically removes, then surpassed through mechanical friction removal chemical reactant
Smooth undamaged planarization surface.In the chemical mechanical milling tech of copper wiring dual-damascene technics, grinding head and layers of copper
Friction generate a large amount of heat, lapping liquid can react with copper and form the grinding by-product such as chemical residue, in addition, grinding
It can adhere to layers of copper surface after grinding containing larger molecular organics and particle, these by-products such as additives in grinding fluid, so as to
Reduce the copper interconnection structure performance being subsequently formed.For this purpose, after chemical mechanical grinding process prepared by copper interconnection structure, can all carry out
Cleaning step, to remove generated by-product in chemical mechanical milling tech, control defect is mutual to improve the copper being subsequently formed
Link the performance of structure.
In the prior art, the copper interconnection structure through chemical mechanical grinding after cleaning, chemical residual can also often occur
The defects of object and particle, and this can seriously affect the performance of interconnection structure.
Therefore, it is necessary to the cleaning method after a kind of new chemical mechanical grinding is proposed, to solve above-mentioned technical problem.
Invention content
A series of concept of reduced forms is introduced in Summary, this will in specific embodiment part into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, the present invention provides the cleaning method after a kind of chemical mechanical grinding, including following step
Suddenly：The wafer to be cleaned after chemical mechanical grinding is provided, the wafer has equipped with the insulating layer being open and is filled in described
The step of copper in opening, the chemical mechanical grinding, is for removing the copper on the insulating layer；With including copper sulphate and dioxygen
The mixed solution of water rinses the wafer as cleaning solution, with remove the crystal column surface because the chemical mechanical grinding is produced
Raw organic matter.
Further, in the step that the wafer is rinsed by the use of the mixed solution comprising copper sulphate and hydrogen peroxide as cleaning solution
After rapid, the step of the method further includes the particle for removing the crystal column surface.
Further, the volumetric mixture ratio of the copper sulphate and hydrogen peroxide is 4:1-6:1.
Further, it is described to rinse the same of the crystal column surface by the use of the mixed solution of copper sulphate and hydrogen peroxide as cleaning solution
When, rinse the wafer rear with deionized water.
Further, the method for the particle of the removal crystal column surface includes rotating the wafer, and wiped with hairbrush
Wash the wafer.
Further, it is described offer chemical mechanical grinding after wafer to be cleaned the step of after, the cleaning solution rinse
Before the step of wafer, the method is further included rinses the crystal column surface with the mixed solution of deionized water and citric acid
The step of.
Further, it is described offer chemical mechanical grinding after wafer to be cleaned the step of after, use deionized water described
Before the step of rinsing the crystal column surface with the mixed solution of citric acid, the method further includes the ultrasonic wave using deionized water
The step of rinsing the wafer.
Further, it is described offer chemical mechanical grinding after wafer to be cleaned the step of after, it is described utilize deionization
Described in the Ultrasonic of water the step of wafer before, the method further includes front and the back of the body that the wafer is rinsed with deionized water
The step of face.
Further, after the step of particle of the removal crystal column surface, the method, which further includes, uses deionized water
The step of rinsing the front and back of the wafer, then drying the wafer.
Further, the rotating speed of the wafer is 20rpm/min-25rpm/min.
Further, in the step of chemical mechanical grinding, lapping liquid used is Silica abrasive liquid.
In conclusion cleaning method according to the present invention, rinses crystal column surface, by chemical machine by copper sulphate and hydrogen peroxide
In the remaining organic matter removal of the crystal column surface in tool grinding technics, the chemical residual defect in cleaning process is improved, and
The remaining particle in part is removed, and then improves the yield of chemical mechanical grinding product.
Description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing：
Fig. 1 is the flow chart cleaned according to the cleaning method after the chemical mechanical grinding of prior art；
Fig. 2 is the flow chart cleaned according to the cleaning method after chemical mechanical grinding of the invention；
Fig. 3 is the flow chart cleaned according to the scheme of the embodiment of the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, to illustrate proposition of the present invention
A kind of chemical mechanical grinding after cleaning method.Obviously, execution of the invention is not limited to the technology people of semiconductor applications
The specific details that member is familiar with.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this hair
It is bright to have other embodiment.
It should be understood that it when the term " comprising " and/or " including " is used in this specification, indicates described in presence
Feature, entirety, step, operation, element and/or component, but do not preclude the presence or addition of other one or more features, entirety,
Step, operation, element, component and/or combination thereof.
According to flow chart such as Fig. 1 institutes of the wafer after a kind of cleaning method cleaning chemical mechanical grinding in prior art
Show, including following key step：
In step S101, the surface (including the back side) of the wafer after chemical mechanical grinding deionized water is rinsed 45
- 80 seconds seconds.
In step s 102, in ultrasonic cleaning equipment (Mega Sonic Tank), by the wafer deionized water
It rinses -80 seconds 75 seconds, the wherein temperature of deionized water is 45 DEG C.
In step s 103, in rotary broom cleaning device (Brusher) one, the mixing with deionized water and citric acid is molten
Liquid rinses the crystal column surface -85 seconds 80 seconds.
In step S104, in rotary broom cleaning device two, with deionized water and citric acid (CTS, Cirtic
Solution mixed solution) rinses the crystal column surface -85 seconds 80 seconds；
In step S105, in spin rinse spin-drying device, the crystal column surface and the back side are rinsed with deionized water
20 seconds, the wafer is then made to rotate to drying, the rotating speed of the wafer is 1600rpm/min-1800rpm/min, during rotation
Between be -60 seconds 50 seconds；
In step s 106, dry wafer is transmitted in rear order processing apparatus.
The copper interconnection structure through chemical mechanical grinding is cleaned using the cleaning method of the prior art, after cleaning,
The defects of chemical residue and particle can also often occur in crystal column surface, and this can seriously affect the performance of interconnection structure.Through big
The reason of quantity research finds, generates this defect is that chemical residue is mostly larger molecular organics, these larger molecular organics
Adhesion strength is larger, can wrap up particle, and the larger molecular organics for being wrapped in particle are adhered to crystal column surface, clear with the prior art
Washing method is difficult removal.
In view of problem above, the present invention proposes the cleaning method after a kind of chemical mechanical grinding, as shown in Fig. 2, it is wrapped
Include following key step：
In step s 201, the wafer to be cleaned after chemical mechanical grinding is provided, the wafer has equipped with the exhausted of opening
The step of edge layer and filling copper in the opening, the chemical mechanical grinding, is for removing the copper on the insulating layer.
In step S202, the wafer is rinsed by the use of the mixed solution comprising copper sulphate and hydrogen peroxide as cleaning solution, with
Remove the crystal column surface because of organic matter caused by the chemical mechanical grinding.
Cleaning method according to the present invention rinses crystal column surface, by chemical mechanical grinding work by copper sulphate and hydrogen peroxide
In the remaining organic matter removal of the crystal column surface in skill, the chemical residual defect in cleaning process is improved, and remove part
Remaining particle, and then improve the yield of chemical mechanical grinding product.
Exemplary embodiment
Fig. 3 show the flow chart cleaned according to the scheme of the embodiment of the present invention, including following key step：
In step S301, the wafer to be cleaned after chemical mechanical grinding is provided.The wafer has equipped with the exhausted of opening
The step of edge layer and filling copper in the opening, the chemical mechanical grinding, is for removing the copper on the insulating layer.
In chemical mechanical planarization process, treat that the to be ground of wafer of chemical mechanical grinding is fixed on grinding table downwards, grinding head
The back side of wafer to be ground is downwardly against, grinding head and grinding table, which respectively rotate, to be ground, and is needed in chemical mechanical planarization process
Lapping liquid is continuously added, with the relative motion between grinding pad and wafer to be ground and is continuously added lapping liquid, is realized
The grinding of wafer to be ground forms flat surface.The chemical mechanical grinding is copper wiring chemical mechanical grinding.In describedization
In the process of lapping for learning mechanical lapping, lapping liquid used is Silica abrasive liquid.Specific chemical mechanical milling tech reference
The prior art, details are not described herein.
In step s 302, in input unit, the surface (including the back side) of the wafer is rinsed with deionized water.With
The purpose that deionized water rinses the wafer is to remove the Certain residues of crystal column surface.The washing time of the deionized water is
- 80 seconds 75 seconds, which was that for illustrative purposes, those skilled in the art can be adjusted as the case may be.
In step S303, in ultrasonic cleaning equipment, the wafer is rinsed with deionized water.Wherein, deionization
The temperature of water is 40 DEG C -50 DEG C, preferably 45 DEG C.The washing time of the deionized water is -80 seconds 75 seconds, which is to lift
The purpose of example explanation, those skilled in the art can be adjusted as the case may be.Flushing in ultrasonic cleaning equipment
Process is：In the case where being not directly contacted with wafer, using the propagation of high frequency sound wave in deionized water come reach by particle from
Crystal column surface is detached and is taken away.
In step s 304, in rotary broom cleaning device one, by the crystal column surface deionized water and citric acid
Mixed solution rinses, then with including copper sulphate (CuSO4·5H2O, cupric sulfate pentahydrate) and hydrogen peroxide (H2O2, hydrogen peroxide)
Mixed solution rinses the crystal column surface, while rinse the wafer rear with deionized water as cleaning solution, then opens institute
The hairbrush of rotary broom cleaning device one is stated, while rotates the wafer, so that the hairbrush cleans the wafer.The step for
Purpose be the removal crystal column surface because of organic matter caused by the chemical mechanical grinding.
The time that the mixed solution of the deionized water and citric acid rinses for -55 seconds 40 seconds, the cleaning solution and described
The washing time of deionized water is -20 seconds 15 seconds, and the rotating speed of the wafer is 20rpm/min-25rpm/min, the numerical value be for
The purpose illustrated, those skilled in the art can be adjusted as the case may be.
Flushing process in the rotary broom cleaning device is：By the relative motion between hairbrush and wafer, utilize
Frictional force of the hairbrush on wafer takes away particle from crystal column surface.
In the mixed solution of the deionized water and citric acid, a concentration of 25wt.%-30wt.% of the citric acid is excellent
Select 27wt.%.In the cleaning solution, a concentration of 10wt.%-25wt.% of the copper sulphate, preferably 15wt.%；The dioxygen
A concentration of 30wt.%-32wt.% of water, preferably 31wt.%.The volumetric mixture ratio of copper sulphate and hydrogen peroxide is 4:1-6:1, it is excellent
Select 5:1.It is organic containing larger molecular organics, these macromoleculars such as additives in the lapping liquid used in chemical mechanical planarization process
The adhesion strength of object and the crystal column surface is larger, and inventor is it is discovered by experiment that particle is wrapped in by these larger molecular organics
Inside the larger molecular organics, if first organics removal, then the particle for being exposed to outside is removed, preferable effect can be obtained
Fruit.Hydrogen peroxide can aoxidize these larger molecular organics, formed oxidation after organic matter, and aoxidize after organic matter easily with
Copper sulphate reaction generation complex, and by organic matter removal, so as to improve the removal efficiency of larger molecular organics.Meanwhile it is going
While except organic matter, the residual particles being partially retained in inside organic matter can be removed.
In step S305, in rotary broom cleaning device two, by the crystal column surface deionized water and citric acid
Mixed solution rinses.The washing time is -85 seconds 80 seconds.In flushing process, open hairbrush, while make the wafer with
The speed rotation of 20rpm/min-25rpm/min, so that the hairbrush cleans the wafer.The numerical value is for illustrative
Purpose, those skilled in the art can be adjusted as the case may be.It, will by copper sulphate and hydrogen peroxide in previous step
After organic matter removal, then by the scouring of the hairbrush of rotary broom cleaning device one and rotary broom cleaning device two, by exposed particle
Removal, to improve the grain defect in cleaning process.
In step S306, in spin rinse spin-drying device, the crystal column surface is used into deionized water (including the back side)
It rinses, the wafer is then made to rotate to drying.The washing time be -25 seconds 15 seconds, preferably 20 seconds, the rotating speed of the wafer
For 1600rpm/min-1800rpm/min, rotational time is -60 seconds 50 seconds.The numerical value is ability for illustrative purposes
Field technique personnel can be adjusted as the case may be.Flushing process in the spin rinse spin-drying device is：At a high speed
Rotating wafer is removed the particle that crystal column surface adheres to using the centrifugal force generated when rotating.
In step S307, dry wafer is transmitted in rear order processing apparatus.
Cleaning method according to the present invention rinses crystal column surface, by chemical mechanical grinding work by copper sulphate and hydrogen peroxide
In the remaining organic matter removal of the crystal column surface in skill, the chemical residual defect in cleaning process is improved, and remove part
Remaining particle, and then improve the yield of chemical mechanical grinding product.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in the range of described embodiment.In addition people in the art
It is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of member
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (11)
1. the cleaning method after a kind of chemical mechanical grinding, which is characterized in that include the following steps：
The wafer to be cleaned after chemical mechanical grinding is provided, the wafer has equipped with the insulating layer being open and is filled in described
The step of copper in opening, the chemical mechanical grinding, is for removing the copper on the insulating layer；
The wafer is rinsed by the use of the mixed solution comprising copper sulphate and hydrogen peroxide as cleaning solution, to remove the crystal column surface
Because of organic matter caused by the chemical mechanical grinding.
2. according to the method described in claim 1, it is characterized in that, described with the mixed solution for including copper sulphate and hydrogen peroxide
After the step of wafer being rinsed as cleaning solution, the step of the method further includes the particle for removing the crystal column surface.
3. according to the method described in claim 1, it is characterized in that, the volumetric mixture ratio of the copper sulphate and hydrogen peroxide is 4:1-
6:1。
It is 4. according to the method described in claim 1, it is characterized in that, described with the mixed solution for including copper sulphate and hydrogen peroxide
While rinsing the crystal column surface as cleaning solution, the wafer rear is rinsed with deionized water.
5. according to the method described in claim 2, it is characterized in that, the method for the particle of the removal crystal column surface includes
The wafer is rotated, and the wafer is cleaned with hairbrush.
6. according to the method described in claim 1, it is characterized in that, it is described offer chemical mechanical grinding after wafer to be cleaned
The step of after, the cleaning solution rinse the wafer the step of before, the method is further included with deionized water and citric acid
Mixed solution rinse the crystal column surface the step of.
7. according to the method described in claim 6, it is characterized in that, it is described offer chemical mechanical grinding after wafer to be cleaned
The step of after, it is described with the mixed solution of deionized water and citric acid rinse the crystal column surface the step of before, the method
The step of further including wafer described in the Ultrasonic using deionized water.
8. the method according to the description of claim 7 is characterized in that wafer to be cleaned after the offer chemical mechanical grinding
The step of after, the step of wafer described in the Ultrasonic using deionized water before, the method further include spend from
Sub- water rinses the step of front and back of the wafer.
9. according to the method described in claim 2, it is characterized in that, the particle of the removal crystal column surface the step of
Afterwards, the method further includes the front and back that the wafer is rinsed with deionized water, the step of then drying the wafer.
10. according to the method described in claim 5, it is characterized in that, the rotating speed of the wafer is 20rpm/min-25rpm/
min。
11. according to the method described in claim 1, it is characterized in that, in the step of chemical mechanical grinding, used grinds
Grinding fluid is Silica abrasive liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611187148.6A CN108206129A (en) | 2016-12-20 | 2016-12-20 | A kind of cleaning method after chemical mechanical grinding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611187148.6A CN108206129A (en) | 2016-12-20 | 2016-12-20 | A kind of cleaning method after chemical mechanical grinding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108206129A true CN108206129A (en) | 2018-06-26 |
Family
ID=62603594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611187148.6A Pending CN108206129A (en) | 2016-12-20 | 2016-12-20 | A kind of cleaning method after chemical mechanical grinding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108206129A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110620036A (en) * | 2019-10-22 | 2019-12-27 | 武汉新芯集成电路制造有限公司 | Wafer cleaning method |
| CN112171513A (en) * | 2020-09-29 | 2021-01-05 | 合肥晶合集成电路股份有限公司 | Polishing pad processing method and chemical mechanical polishing equipment |
| CN113500516A (en) * | 2021-07-13 | 2021-10-15 | 西安奕斯伟硅片技术有限公司 | Method and system for cleaning grinding device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101908465A (en) * | 2009-06-04 | 2010-12-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing residues after chemical mechanical polishing |
| CN101946310B (en) * | 2008-02-15 | 2012-09-12 | 狮王株式会社 | Cleaning composition and method for cleaning substrate for electronic device |
| JP2016166407A (en) * | 2015-02-06 | 2016-09-15 | 國立台灣科技大學 | Substrate, method for treating substrate and device for treating substrate |
| CN106158618A (en) * | 2015-04-23 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | The minimizing technology of leftover after chemical mechanical grinding |
-
2016
- 2016-12-20 CN CN201611187148.6A patent/CN108206129A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101946310B (en) * | 2008-02-15 | 2012-09-12 | 狮王株式会社 | Cleaning composition and method for cleaning substrate for electronic device |
| CN101908465A (en) * | 2009-06-04 | 2010-12-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing residues after chemical mechanical polishing |
| JP2016166407A (en) * | 2015-02-06 | 2016-09-15 | 國立台灣科技大學 | Substrate, method for treating substrate and device for treating substrate |
| CN106158618A (en) * | 2015-04-23 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | The minimizing technology of leftover after chemical mechanical grinding |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110620036A (en) * | 2019-10-22 | 2019-12-27 | 武汉新芯集成电路制造有限公司 | Wafer cleaning method |
| CN112171513A (en) * | 2020-09-29 | 2021-01-05 | 合肥晶合集成电路股份有限公司 | Polishing pad processing method and chemical mechanical polishing equipment |
| CN113500516A (en) * | 2021-07-13 | 2021-10-15 | 西安奕斯伟硅片技术有限公司 | Method and system for cleaning grinding device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201046544Y (en) | Rinsing apparatus for chemical machinery polisher | |
| TW445534B (en) | Manufacture of semiconductor integrated circuit device | |
| CN102179390B (en) | Method for cleaning ultra-smooth surface | |
| CN104167351B (en) | A kind of chemical machinery cleaning method of SiC epitaxial wafers | |
| KR101615454B1 (en) | Systems and methods for chemical mechanical polish and clean | |
| JP2003051481A (en) | Method for manufacturing semiconductor integrated circuit device | |
| CN109742018B (en) | Cleaning process for silicon wafer after CMP | |
| CN100539005C (en) | The cleaning method of wafer surface after chemico-mechanical polishing | |
| CN105817991A (en) | Chemical mechanical grinding method | |
| CN108206129A (en) | A kind of cleaning method after chemical mechanical grinding | |
| CN106816497A (en) | A kind of silicon wafer stripping cleaning method and device | |
| CN102446755B (en) | Method for reducing particle defects after chemically mechanical polishing | |
| CN106944381A (en) | Wafer cleaning device and its cleaning method | |
| CN110335807A (en) | A kind of silicon wafer cleaning method | |
| Wei et al. | Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaning | |
| CN102225406A (en) | A kind of cleaning method of diamond wire cutting silicon wafer | |
| JP2005327807A (en) | Sheet type washing apparatus and its washing method | |
| CN102485424B (en) | Polishing device and abnormality treatment method thereof | |
| CN102806525A (en) | Polishing device and method for removing polishing by-products | |
| TW518685B (en) | CMP process for a damascene pattern | |
| CN102486994B (en) | A kind of silicon wafer cleaning process | |
| CN101419903A (en) | Method for removing particles on wafer | |
| TW200809948A (en) | Cleaning apparatus | |
| KR19980073947A (en) | Wafer cleaning method | |
| JP6971676B2 (en) | Board processing equipment and board processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180626 |