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CN108203844A - Tantalic acid magnesium serial crystal and preparation method thereof - Google Patents

Tantalic acid magnesium serial crystal and preparation method thereof Download PDF

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CN108203844A
CN108203844A CN201810019067.8A CN201810019067A CN108203844A CN 108203844 A CN108203844 A CN 108203844A CN 201810019067 A CN201810019067 A CN 201810019067A CN 108203844 A CN108203844 A CN 108203844A
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crystal
mgta
acid magnesium
tantalic acid
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CN108203844B (en
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马云峰
徐家跃
蒋毅坚
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Shanghai Institute of Technology
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    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/30Niobates; Vanadates; Tantalates
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08Downward pulling

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Abstract

The invention discloses a kind of tantalic acid magnesium serial crystals, i.e. MgO Ta2O5Pseudo binary system, respectively Mg4Ta2O9、Mg3Ta2O8And MgTa2O6.The method for preparing tantalic acid magnesium serial crystal is additionally provided, using excessive MgO or Mg (OH)2Component compensates, and passes through the high-purity MgTa of solid state reaction kinetics2O6And Mg4Ta2O9Powder, and the rodlike MgTa of Centimeter Level is grown using micro- glass tube down-drawing2O6And Mg4Ta2O9Monocrystal;With Mg4Ta2O9And MgTa2O6Make melting starting material, using spontaneous nucleation technology, in MgTa2O6The rodlike Mg of Centimeter Level is grown on ceramic seed crystal stick3Ta2O8Monocrystal.It is of the invention to use micro- glass tube down-drawing, the high-temperature gradient of growth near interface is efficiently used, realizes quick, high uniformity crystallization, post-heater is efficiently used and avoids the excessive caused problem of Cracking of thermal stress.

Description

钽酸镁系列晶体及其制备方法Magnesium tantalate series crystals and preparation method thereof

技术领域technical field

本发明属于化工领域,涉及一种微波介电材料,具体来说是钽酸镁系列晶体及其制备方法。The invention belongs to the field of chemical industry, and relates to a microwave dielectric material, specifically magnesium tantalate series crystals and a preparation method thereof.

背景技术Background technique

随着微波通讯、现代移动电话和电子通讯的迅猛发展,在通讯体系中扮演重要角色的微波介电材料得到了科研工作者和科技产业厂商的大力关注。Mg4Ta2O9、Mg3Ta2O8、MgTa2O6及其掺杂材料,具有优良的微波介电性能和发光性能,分别以陶瓷和粉末形式得以广泛研究。为了深入探讨MgO-Ta2O5体系材料的微波介电、光学等本征属性及其随着组分、结构以及晶向的变化规律,对其晶体材料的制备已迫在眉睫。With the rapid development of microwave communication, modern mobile phones and electronic communication, microwave dielectric materials, which play an important role in communication systems, have attracted great attention from scientific researchers and technology industry manufacturers. Mg 4 Ta 2 O 9 , Mg 3 Ta 2 O 8 , MgTa 2 O 6 and their doped materials have excellent microwave dielectric properties and luminescent properties, and have been widely studied in the form of ceramics and powders. In order to deeply explore the intrinsic properties of MgO-Ta 2 O 5 system materials such as microwave dielectric and optics and their changes with composition, structure and crystal orientation, the preparation of its crystal materials is imminent.

Mg4Ta2O9晶体材料属于六方晶系,具有钛铁矿结构,空间群为P3c1(165),晶格常数为a=0.51611nm,c=1.40435nm,V=0.32396nm3。Mg4Ta2O9在升温至其熔点1825℃期间,虽说无相变发生,但由于MgO高温易挥发,会导致Mg4Ta2O9轻微分解为MgTa2O6,不利于纯相粉料的合成,高结晶质量晶体的持续生长和等化学计量比的组分要求,故本发明采用MgO或Mg(OH)2组分补偿来合成高纯Mg4Ta2O9粉料和晶体。The Mg 4 Ta 2 O 9 crystal material belongs to the hexagonal system, has an ilmenite structure, the space group is P3c1(165), and the lattice constants are a=0.51611nm, c=1.40435nm, V=0.32396nm 3 . During the period when Mg 4 Ta 2 O 9 is heated to its melting point of 1825°C, although no phase transition occurs, because MgO is volatile at high temperature, Mg 4 Ta 2 O 9 will be slightly decomposed into MgTa 2 O 6 , which is not conducive to pure phase powder Synthesis of high crystal quality crystals, continuous growth of crystals and equal stoichiometric component requirements, so the present invention uses MgO or Mg(OH) 2 component compensation to synthesize high-purity Mg 4 Ta 2 O 9 powder and crystals.

Mg3Ta2O8为正交晶系,属于Cmcm(63)空间群,晶胞参数为a=1.0238nm、b=1.1456nm和c=1.0065nm,MgO-Ta2O5相图表明,其只在1475~1675℃稳定存在,高于或低于此温度区间,分解为Mg4Ta2O9和MgTa2O6。纯相粉末或晶体即使制备出来,也会在升温、熔解或降温过程中产生或多或少的分解产物,因此至今纯相的单晶Mg3Ta2O8尚未有报导。本发明利用微下拉法的高温度梯度及初始粉料的MgO补偿及自发成核法制备出纯相Mg3Ta2O8晶体。Mg 3 Ta 2 O 8 is an orthorhombic crystal system, which belongs to the Cmcm(63) space group. The unit cell parameters are a=1.0238nm, b=1.1456nm and c=1.0065nm. The MgO-Ta 2 O 5 phase diagram shows that its It only exists stably at 1475~1675℃, above or below this temperature range, it decomposes into Mg 4 Ta 2 O 9 and MgTa 2 O 6 . Even if the pure-phase powder or crystal is prepared, more or less decomposition products will be produced during the process of heating, melting or cooling. Therefore, no single-phase pure-phase Mg 3 Ta 2 O 8 has been reported so far. The invention utilizes the high temperature gradient of the micro-pulling down method, the MgO compensation of the initial powder material and the spontaneous nucleation method to prepare the pure phase Mg 3 Ta 2 O 8 crystal.

MgTa2O6是一种具有三金红石结构的钽酸盐,为四方晶系,属于P42/mnm空间群,晶格常数在合成MgTa2O6粉料及生长MgTa2O6晶体过程中,会由于MgO的高温时挥发,导致Ta2O5杂相,所以需要进行MgO组分补偿,制备获得等化学计量比、高结晶质量的MgTa2O6晶体。MgTa 2 O 6 is a tantalate with a three-rutile structure. It is a tetragonal crystal system and belongs to the P42/mnm space group. The lattice constant and In the process of synthesizing MgTa 2 O 6 powder and growing MgTa 2 O 6 crystal, MgO volatilizes at high temperature, resulting in Ta 2 O 5 impurity phase, so MgO component compensation is required to obtain equal stoichiometric ratio and high crystallinity Quality MgTa 2 O 6 crystals.

微下拉法是一种可实现高质量单晶光纤制备的单晶生长技术,该方法具有节约原料、降低成本、坩埚后处理简单、单晶生长速率大、晶体纵横比非常大、晶体截面形状可控、可生长高分凝系数的晶体等诸多优势,在新材料探索以及单晶性能优化方面具有重大开发价值。The micro-pull-down method is a single crystal growth technology that can realize the preparation of high-quality single crystal optical fibers. It has many advantages such as control and the ability to grow crystals with high segregation coefficients, and has great development value in the exploration of new materials and the optimization of single crystal performance.

发明内容Contents of the invention

针对现有技术中的上述技术问题,本发明提供了钽酸镁系列晶体及其制备方法,所述的这种钽酸镁系列晶体及其制备方法要解决现有技术中制备钽酸镁晶体的质量和性能不佳的技术问题。Aiming at the above-mentioned technical problems in the prior art, the present invention provides magnesium tantalate series crystals and a preparation method thereof. The magnesium tantalate series crystals and the preparation method thereof will solve the problems of preparing magnesium tantalate crystals in the prior art. Technical issues with poor quality and performance.

本发明提供了一种钽酸镁晶体,其分子式为Mg4Ta2O9,晶体为六方晶系,所属空间群为P-3c1(165),晶胞参数为a=0.51625(10)nm、c=1.4062(4)nm,密度为6.171g/cm3,精修结构常数为0.0356。The invention provides a magnesium tantalate crystal, the molecular formula of which is Mg 4 Ta 2 O 9 , the crystal is a hexagonal crystal system, the space group it belongs to is P-3c1(165), and the unit cell parameters are a=0.51625(10)nm, c=1.4062(4)nm, the density is 6.171g/cm 3 , and the refined structure constant is 0.0356.

本发明还提供了一种钽酸镁晶体,其分子式为Mg3Ta2O8,属正交晶系,所属空间群为Cmcm(63),晶格常数为a=0.38087(12)nm,b=1.0034(2)nm,c=1.0206(3)nm,密度为5.965g/cm3,精修结构常数为0.0207。The present invention also provides a magnesium tantalate crystal whose molecular formula is Mg 3 Ta 2 O 8 , belongs to the orthorhombic crystal system, belongs to the space group Cmcm(63), and has a lattice constant of a=0.38087(12)nm, b =1.0034(2)nm, c=1.0206(3)nm, the density is 5.965g/cm 3 , and the refined structure constant is 0.0207.

本发明还提供了一种钽酸镁晶体,其分子式为MgTa2O6,属四方晶系,所属空间群为P42/mnm(136),晶格常数为a=0.46821(3)nm、c=0.91382(7)nm,晶体密度为8.03265g/cm3,精修参数RAII为0.026。The present invention also provides a magnesium tantalate crystal, whose molecular formula is MgTa 2 O 6 , belongs to the tetragonal crystal system, belongs to the space group P42/mnm(136), and has a lattice constant of a=0.46821(3)nm, c= 0.91382(7)nm, the crystal density is 8.03265g/cm 3 , and the refinement parameter RAII is 0.026.

本发明还提供了上述的Mg4Ta2O9晶体的制备方法,包括如下步骤:The present invention also provides a method for preparing the above-mentioned Mg 4 Ta 2 O 9 crystal, comprising the following steps:

1)按照5.2:1或5.6:1的摩尔比,称取纯相Mg(OH)2和Ta2O5,研磨混匀,过筛,球磨,压制成圆柱片,1300℃或1350℃预烧16h,升降温速率为100℃/h;或者按照4.04:1的摩尔比,称取纯相MgO和Ta2O5原料,研磨混匀,过筛,球磨,压制成圆柱片,1400℃预烧2h,升降温速率为1400℃/h,即得到纯相Mg4Ta2O9陶瓷圆柱片,研磨至粉末;1) According to the molar ratio of 5.2:1 or 5.6:1, weigh the pure phase Mg(OH) 2 and Ta 2 O 5 , grind and mix, sieve, ball mill, press into cylindrical tablets, and pre-fire at 1300°C or 1350°C 16h, the heating and cooling rate is 100°C/h; or according to the molar ratio of 4.04:1, weigh the pure phase MgO and Ta 2 O 5 raw materials, grind and mix, sieve, ball mill, press into cylindrical pieces, and pre-fire at 1400°C 2h, the heating and cooling rate is 1400°C/h, and the pure phase Mg 4 Ta 2 O 9 ceramic cylinder is obtained, which is ground to powder;

2)将Mg4Ta2O9与Mg(OH)2或MgO粉料以10:1的摩尔比称量、球磨混匀,放入Ir坩埚中,以Mg4Ta2O9单晶棒做籽晶,抽真空12h,通入保护气氛Ar,调节进、出气体流量至20mL/min,使其气压稳定在1.5atm,设置微下拉速度为0.05mm/min进行生长,生长完毕后,3h降温后,得到无色透明单晶Mg4Ta2O9。本发明还提供了上述的MgTa2O6晶体的方法,包括如下步骤:2) Weigh Mg 4 Ta 2 O 9 and Mg(OH) 2 or MgO powder at a molar ratio of 10:1, mix them by ball milling, put them into an Ir crucible, and use Mg 4 Ta 2 O 9 single crystal rods to make Seed crystal, evacuated for 12 hours, put in protective atmosphere Ar, adjust the flow rate of the incoming and outgoing gas to 20mL/min, make the air pressure stable at 1.5atm, set the micro-pulling speed to 0.05mm/min to grow, after the growth is completed, cool down for 3h After that, a colorless and transparent single crystal Mg 4 Ta 2 O 9 was obtained. The present invention also provides the method for the above-mentioned MgTa2O6 crystal, comprising the following steps:

1)按照4:1的摩尔比,称取纯相Mg(OH)2和Ta2O5,研磨混匀,过筛,球磨,压制成圆柱片,1300℃预烧16h,100℃/h升降温;1) According to the molar ratio of 4:1, weigh the pure phase Mg(OH) 2 and Ta 2 O 5 , grind and mix them evenly, sieve, ball mill, press into cylindrical pieces, pre-calcine at 1300°C for 16h, 100°C/h cool down;

2)将合成陶瓷圆柱片放入如Ir坩埚中,以MgTa2O6多晶棒做籽晶,抽真空12h,再通入Ar气,压强稳定在1.5atm,流量控制在20mL/min,设置下拉速度为0.2mm/min,自发成核,调节功率进行多次缩颈扩肩过程,优化结晶质量,设置降温时间为10h,却至室温,至此生长结束,获得得到浅黄透明单晶Mg3Ta2O82) Put the synthetic ceramic cylinder into a crucible such as Ir, use MgTa 2 O 6 polycrystalline rod as the seed crystal, vacuumize for 12 hours, and then inject Ar gas, the pressure is stable at 1.5atm, the flow rate is controlled at 20mL/min, set The pull-down speed is 0.2mm/min, spontaneous nucleation, adjust the power to perform multiple necking and shoulder expansion processes, optimize the crystal quality, set the cooling time to 10h, cool to room temperature, and grow to the end, and obtain a light yellow transparent single crystal Mg 3 Ta 2 O 8 .

本发明还提供了上述的MgTa2O6晶体的方法,包括如下步骤:The present invention also provides the method for the above-mentioned MgTa2O6 crystal, comprising the following steps:

1)按照1.15:1的摩尔比,称取纯相Mg(OH)2和Ta2O5,研磨混匀,过筛,球磨,压制成圆柱片,1400℃预烧8h,100℃/h升降温;1) According to the molar ratio of 1.15:1, weigh the pure phase Mg(OH) 2 and Ta 2 O 5 , grind and mix them evenly, sieve, ball mill, press them into cylindrical pieces, pre-calcine at 1400°C for 8h, 100°C/h cool down;

2)MgTa2O6与Mg(OH)2粉料以10:1的摩尔比称量、球磨混匀,放入Ir坩埚中,以Y3Al5O12单晶棒做籽晶,抽真空12h,通入保护气氛Ar,调节进、出气体流量至20mL/min,使其气压稳定在1.5atm,设置微下拉速度为0.2mm/min进行生长,晶体生长完毕后,8h降温后取出,在空气中1000℃退火12h后变成淡黄色透明,得到得到透明单晶Mg4Ta2O92) Weigh MgTa 2 O 6 and Mg(OH) 2 powders at a molar ratio of 10:1, ball mill and mix them evenly, put them into an Ir crucible, use Y 3 Al 5 O 12 single crystal rods as seed crystals, and vacuumize 12h, enter the protective atmosphere Ar, adjust the flow rate of the incoming and outgoing gases to 20mL/min, make the air pressure stable at 1.5atm, set the micro-pulling down speed to 0.2mm/min for growth, after the crystal growth is completed, take it out after cooling down for 8h, and in the After annealing at 1000°C in air for 12 hours, it becomes light yellow and transparent, and a transparent single crystal Mg 4 Ta 2 O 9 is obtained.

3)本发明是采用MgO或Mg(OH)2组分补偿,通过固相反应合成高纯MgTa2O6和Mg4Ta2O9粉料,并采用微下拉法生长出厘米级棒状MgTa2O6和Mg4Ta2O9单晶体,大小分别为Φ(2~3)mm×60mm和Φ(1.2~1.6)mm×97mm;以Mg4Ta2O9和MgTa2O6作熔融起始物,采用自发成核技术,在MgTa2O6陶瓷籽晶棒上生长出厘米级棒状Mg3Ta2O8单晶体,大小为Φ1.2mm×19mm,所生长晶体结晶完整度高,透明无宏观缺陷,完全满足晶体各类本征属性的表征和测试。3) The present invention uses MgO or Mg(OH) 2 component compensation, synthesizes high-purity MgTa 2 O 6 and Mg 4 Ta 2 O 9 powders through solid-state reaction, and grows centimeter-scale rod-shaped MgTa 2 by micro-pulling down method O 6 and Mg 4 Ta 2 O 9 single crystals, the sizes are Φ(2~3)mm×60mm and Φ(1.2~1.6)mm×97mm respectively; Mg 4 Ta 2 O 9 and MgTa 2 O 6 are used as melting initiation Using spontaneous nucleation technology, centimeter-scale rod-shaped Mg 3 Ta 2 O 8 single crystals are grown on MgTa 2 O 6 ceramic seed rods, with a size of Φ1.2mm×19mm. The grown crystals have high crystallization integrity and are transparent without macroscopic Defects fully satisfy the characterization and testing of various intrinsic properties of crystals.

本发明和已有技术相比,其技术进步是显著的。本发明采用过量MgO或Mg(OH)2进行组分补偿,从而在纯相粉料、陶瓷和晶体的制备过程中有效抑制MgO的挥发及化合物的分解与杂相生成,获得等化学计量比的三种晶体。本发明所使用的微下拉法,在固液界面附近具有高的温度梯度,与其他晶体生长方法相比,更易生长出易分解易相变的MgO-Ta2O5体系晶体材料,由于该方法在固液界面附近安装有后加热器,从而能够有效解决MgO-Ta2O5体系晶体材料的易开裂问题。Compared with the prior art, the technical progress of the present invention is remarkable. The present invention uses excess MgO or Mg(OH)2 for component compensation, thereby effectively suppressing the volatilization of MgO, the decomposition of compounds and the formation of impurity phases during the preparation of pure-phase powders, ceramics and crystals, and obtaining equistoichiometric ratios Three types of crystals. The micro-pull-down method used in the present invention has a high temperature gradient near the solid-liquid interface. Compared with other crystal growth methods, it is easier to grow the MgO-Ta 2 O 5 system crystal material that is easy to decompose and phase transition. A rear heater is installed near the solid-liquid interface, thereby effectively solving the problem of easy cracking of the MgO-Ta 2 O 5 system crystal material.

附图说明:Description of drawings:

图1为微下拉晶体生长采用的射频感应加热型的微下拉晶体生长炉的结构示意图;Fig. 1 is the structural representation of the micro-drawn crystal growth furnace of the radio frequency induction heating type that micro-drawn crystal growth adopts;

图2(a)为5.2Mg(OH)2:Ta2O5配比原料合成的Mg4Ta2O9粉末XRD图谱;Figure 2(a) is the XRD pattern of Mg 4 Ta 2 O 9 powder synthesized from 5.2Mg(OH) 2 :Ta 2 O 5 raw materials;

图2(b)为5.6Mg(OH)2:Ta2O5配比原料合成的Mg4Ta2O9粉末XRD图谱;Figure 2(b) is the XRD pattern of Mg 4 Ta 2 O 9 powder synthesized from raw materials with a ratio of 5.6Mg(OH) 2 : Ta 2 O 5;

图2(c)为4.04MgO:Ta2O5配比原料合成的Mg4Ta2O9粉末XRD图谱;Figure 2(c) is the XRD pattern of Mg 4 Ta 2 O 9 powder synthesized from 4.04MgO:Ta 2 O 5 ratio raw materials;

图3为用过量10%Mg(OH)2的Mg4Ta2O9粉料生长的Mg4Ta2O9棒状单晶;Figure 3 is a Mg 4 Ta 2 O 9 rod-shaped single crystal grown with an excess of 10% Mg(OH) 2 Mg 4 Ta 2 O 9 powder;

图4用过量10%MgO的Mg4Ta2O9粉料生长的1.6mm直径的Mg4Ta2O9棒状单晶;Fig. 4 Mg 4 Ta 2 O 9 rod-shaped single crystal with a diameter of 1.6mm grown with an excess of 10% MgO Mg 4 Ta 2 O 9 powder;

图5为用过量10%MgO的Mg4Ta2O9粉料生长的2mm直径的Mg4Ta2O9棒状单晶;Figure 5 is a 2 mm diameter Mg 4 Ta 2 O 9 rod-shaped single crystal grown with an excess of 10% MgO Mg 4 Ta 2 O 9 powder;

图6(a)用过量10%Mg(OH)2的Mg4Ta2O9粉料生长的Mg4Ta2O9棒状单晶粉末XRD图谱;Figure 6(a) XRD pattern of Mg 4 Ta 2 O 9 rod-shaped single crystal powder grown with Mg 4 Ta 2 O 9 powder with excess 10% Mg(OH) 2;

图6(b)用过量10%MgO的Mg4Ta2O9粉料生长的1.6mm直径的Mg4Ta2O9棒状单晶粉末XRD图谱;Figure 6(b) XRD pattern of Mg 4 Ta 2 O 9 rod-shaped single crystal powder with a diameter of 1.6mm grown by Mg 4 Ta 2 O 9 powder with an excess of 10% MgO;

图6(c)用过量10%MgO的Mg4Ta2O9粉料生长的2mm直径的Mg4Ta2O9棒状单晶粉末XRD图谱;Figure 6(c) XRD pattern of 2 mm diameter Mg 4 Ta 2 O 9 rod-shaped single crystal powder grown with Mg 4 Ta 2 O 9 powder with excess 10% MgO;

图7(a)为4Mg(OH)2:Ta2O5配比的原料合成的陶瓷的粉末XRD图谱;Figure 7(a) is the powder XRD spectrum of ceramics synthesized from raw materials with a ratio of 4Mg(OH) 2 :Ta 2 O 5 ;

图7(b)为微下拉法生长出的Mg3Ta2O8晶体的粉末XRD图谱;Figure 7(b) is the powder XRD pattern of Mg 3 Ta 2 O 8 crystals grown by the micro pull-down method;

图8为微下拉法生长的Mg3Ta2O8晶体;Fig. 8 is the Mg 3 Ta 2 O 8 crystal grown by the micro pull-down method;

图9为Mg3Ta2O8晶体的结构图;Figure 9 is a structural diagram of Mg 3 Ta 2 O 8 crystal;

图10(a)1.15Mg(OH)2:Ta2O5配比的原料合成的MgTa2O6陶瓷的粉末XRD图谱;Fig. 10(a) powder XRD pattern of MgTa 2 O 6 ceramics synthesized from raw materials with a ratio of 1.15Mg(OH) 2 : Ta 2 O 5 ;

图10(b)微下拉法生长出的MgTa2O6晶体的粉末XRD图谱;Fig. 10(b) powder XRD pattern of MgTa 2 O 6 crystals grown by micro pull-down method;

图11为在MgTa2O6粉末中加入1%的Mg(OH)2用微下拉法生长的MgTa2O6晶体;Fig. 11 is MgTa 2 O 6 crystals grown by micro-pulling method by adding 1% Mg(OH) 2 in MgTa 2 O 6 powder;

图12为MgTa2O6晶体的结构图。Fig. 12 is a structure diagram of MgTa 2 O 6 crystal.

具体实施方式Detailed ways

微下拉晶体生长MgO-Ta2O5是采用法国Cyberstar公司生产的射频感应加热型的微下拉晶体生长炉,如图1所示,所用的Ir坩埚1前端为锥形,大小为Φ16mm×10mm,其喷嘴大小为Φ3mm×3mm,喷嘴通孔直径为1mm,后端为柱形,大小为Φ16mm×30mm,溶化料12下落过程中形成弯月面13,坩埚底部放置Ir后加热器2,大小为Φ16mm×15mm,用于调节喷嘴处固液界面附近的温场分布,一定程度上对安装在下拉杆15上所生长晶体11起到退火,防止开裂的功用。后加热器2下方放置两个不同内外直径大小的Al2O3制的圆环柱绝热支撑3和14,用于进一步调节晶体11生长区间的温场分布,提供适宜的结晶温度梯度。绝热支撑14下方放置透明石英玻璃管4,起到调节坩埚1在射频加热线圈5的垂直位置和显现晶体11生长的宏观状态。坩埚1外边放置内层绝热壁6、外层绝热壁7和外层绝热盖8,优化温场分布。再在外面加上玻璃防护罩9和顶部防护盖10,防止生长原料12泄露并污染防护罩外面的射频加热线圈5,也防止外面不可控杂质对玻璃罩内的生长环境造成污染。The MgO-Ta 2 O 5 micro-pulled crystal growth is a radio-frequency induction heating micro-pulled crystal growth furnace produced by the French Cyberstar company. As shown in Figure 1, the front end of the Ir crucible 1 used is conical, with a size of Φ16mm×10mm. The size of the nozzle is Φ3mm×3mm, the diameter of the through hole of the nozzle is 1mm, the rear end is cylindrical, the size is Φ16mm×30mm, a meniscus 13 is formed during the falling process of the melting material 12, and the Ir rear heater 2 is placed at the bottom of the crucible, and the size is Φ16mm×15mm, used to adjust the temperature field distribution near the solid-liquid interface at the nozzle, to a certain extent anneal the crystal 11 grown on the lower rod 15 and prevent cracking. Two ring column adiabatic supports 3 and 14 made of Al 2 O 3 with different inner and outer diameters are placed under the rear heater 2 to further adjust the temperature field distribution in the growth area of the crystal 11 and provide a suitable temperature gradient for crystallization. A transparent quartz glass tube 4 is placed under the heat insulating support 14 to adjust the vertical position of the crucible 1 on the radio frequency heating coil 5 and to display the macroscopic state of the growth of the crystal 11 . The inner layer insulation wall 6, the outer layer insulation wall 7 and the outer layer insulation cover 8 are placed outside the crucible 1 to optimize the temperature field distribution. Add glass protective cover 9 and top protective cover 10 on the outside again, prevent that growth raw material 12 leaks and pollute the radio frequency heating coil 5 outside protective cover, also prevent outside uncontrollable impurity from polluting the growing environment in glass cover.

下面通过实施例对本发明进一步进行阐述,但不限制本发明。The present invention is further described below by embodiment, but does not limit the present invention.

实施例1微下拉法生长Mg4Ta2O9晶体Example 1 Growth of Mg 4 Ta 2 O 9 crystals by micro pull-down method

(1)固相反应合成高纯Mg4Ta2O9粉料(1) Synthesis of high-purity Mg 4 Ta 2 O 9 powder by solid state reaction

1)5.2Mg(OH)2:1Ta2O5合成纯相Mg4Ta2O9粉料1) Synthesis of pure phase Mg 4 Ta 2 O 9 powder with 5.2Mg(OH) 2 :1Ta 2 O 5

按照5.2:1的摩尔比,称取纯度分别为99.999%和99.99%的Mg(OH)2和Ta2O5的原料共5g,放入研钵中研磨混匀,220目过筛,将其放入装有ZrO2球的球磨罐中,在球磨机上球磨1h。在350MPa压强作用下,制备出大小为Φ13mm×5mm的圆柱片,放入马弗炉1300℃预烧16h,升降温速率为100℃/h。得到的陶瓷圆柱片的相纯用粉末XRD(图2(a))进行表征。According to the molar ratio of 5.2:1, take a total of 5 g of raw materials of Mg(OH) 2 and Ta 2 O 5 with a purity of 99.999% and 99.99%, put them into a mortar, grind and mix them evenly, and sieve them through a 220-mesh sieve. Put it into a ball mill jar filled with ZrO2 balls, and mill it on a ball mill for 1h. Under the action of 350MPa pressure, a cylindrical sheet with a size of Φ13mm×5mm was prepared, put into a muffle furnace for pre-firing at 1300°C for 16h, and the heating and cooling rate was 100°C/h. The phase purity of the obtained ceramic cylinders was characterized by powder XRD (Fig. 2(a)).

2)5.6Mg(OH)2:1Ta2O5合成纯相Mg4Ta2O9粉料2) Synthesis of pure phase Mg 4 Ta 2 O 9 powder with 5.6Mg(OH) 2 :1Ta 2 O 5

将原料配比提升至5.6:1,同时提升预烧温度至1350℃,其它条件不变,得到的陶瓷圆柱片的相纯用粉末XRD(图2(b))进行表征。The ratio of raw materials was raised to 5.6:1, while the pre-firing temperature was raised to 1350°C, and other conditions remained unchanged. The phase purity of the obtained ceramic cylinder was characterized by powder XRD (Fig. 2(b)).

3)4.04MgO:1Ta2O5合成纯相Mg4Ta2O9粉料3) 4.04MgO:1Ta 2 O 5 to synthesize pure phase Mg 4 Ta 2 O 9 powder

按照4.04:1的摩尔比,称取纯度分别为99.9995%和99.99%的MgO和Ta2O5的原料共5g,放入研钵中研磨混匀,220目过筛,将其放入装有ZrO2球的球磨罐中,在球磨机上球磨1h。在350MPa压强作用下,制备出大小为Φ13mm×5mm的圆柱片,放入马弗炉1400℃预烧2h,升降温速率为1400℃/h。得到的陶瓷圆柱片的相纯用粉末XRD(图2(c))进行表征。According to the molar ratio of 4.04:1, take a total of 5 g of MgO and Ta 2 O 5 with a purity of 99.9995% and 99.99% respectively, put them into a mortar, grind and mix them evenly, pass through a 220-mesh sieve, and put them into a ZrO 2 balls in a ball mill jar, milled on a ball mill for 1 h. Under the action of 350MPa pressure, a cylindrical sheet with a size of Φ13mm×5mm was prepared, put into a muffle furnace for pre-firing at 1400°C for 2h, and the heating and cooling rate was 1400°C/h. The phase purity of the obtained ceramic cylinders was characterized by powder XRD (Fig. 2(c)).

(2)微下拉法生长Mg4Ta2O9单晶棒(2) Growth of Mg 4 Ta 2 O 9 single crystal rods by micro-pull method

1)Mg4Ta2O9+0.1Mg(OH)2微下拉法生长光纤晶体1) Mg 4 Ta 2 O 9 +0.1Mg(OH) 2 Micro pull-down method to grow fiber crystal

以Mg(OH)2和Ta2O5为原料合成的纯相Mg4Ta2O9粉料与Mg(OH)2粉料以10:1的摩尔比球磨混匀,共5g放入如图1所示的Ir坩埚中,以前期自发成核优化出来的Mg4Ta2O9单晶棒做籽晶,籽晶上端切平抛光,并保持清洁干燥,固定在空心得Al2O3籽晶杆上。调节坩埚等各类组件和籽晶轴线处在中垂线上,且使得籽晶上表面靠近坩埚喷嘴下表面。密闭球形生长腔室,抽真空12h,通入保护气氛Ar,调节进、出气体流量至20mL/min,使其气压稳定在1.5atm。待气氛流量及压强稳定1h后,设置升温速率1h升温至额定功率的35%,保温1h,待坩埚喷嘴通孔流出熔液,且慢慢扩大蔓延形成弯月面,上移籽晶与之对接,保温1h,待固液界面无任何变化,设置微下拉速度为0.05mm/min进行生长,根据生长界面的变动情况,在额定功率的35~36%区间微调。晶体生长完毕后,3h降温后取出,得到如图3所示的,大小为Φ1.2mm×97mm的无色透明单晶。The pure-phase Mg 4 Ta 2 O 9 powder synthesized from Mg(OH) 2 and Ta 2 O 5 and Mg(OH) 2 powder are ball-milled at a molar ratio of 10:1, and a total of 5g is put into the In the Ir crucible shown in 1, the Mg 4 Ta 2 O 9 single crystal rod optimized for spontaneous nucleation in the early stage was used as the seed crystal. crystal rod. Adjust various components such as the crucible and the axis of the seed crystal to be on the vertical line, and make the upper surface of the seed crystal close to the lower surface of the crucible nozzle. Seal the spherical growth chamber, evacuate it for 12 hours, pass in the protective atmosphere Ar, adjust the flow rate of the incoming and outgoing gas to 20mL/min, and stabilize the air pressure at 1.5atm. After the atmosphere flow and pressure are stable for 1 hour, set the heating rate for 1 hour to raise the temperature to 35% of the rated power, and keep it warm for 1 hour. After the melt flows out from the through hole of the crucible nozzle, and slowly expands and spreads to form a meniscus, move the seed crystal up to dock with it , keep warm for 1h, and wait for no change in the solid-liquid interface, set the micro-pulling speed to 0.05mm/min for growth, and fine-tune it in the range of 35-36% of the rated power according to the change of the growth interface. After the crystal growth was completed, it was taken out after cooling down for 3 hours, and a colorless and transparent single crystal with a size of Φ1.2 mm×97 mm was obtained as shown in FIG. 3 .

2)Mg4Ta2O9+0.1MgO微下拉法生长Mg4Ta2O9晶体2) Mg 4 Ta 2 O 9 +0.1MgO micro pull-down method to grow Mg 4 Ta 2 O 9 crystals

以MgO和Ta2O5为原料合成的纯相Mg4Ta2O9粉料与MgO粉料以10:1的摩尔比球磨混匀,放入Ir坩埚中进行生长,生长功率为设备额定功率的36%,生长速度为0.05mm/min,所生长的晶体大小为Φ1.6mm×76mm,如图4所示对晶体进行粉末XRD表征,表明其为纯相,如图6(b)所示。用相同粉料在额定功率为37.5%,生长速度为0.05mm/min的条件下,生长出大小为Φ2.0mm×16mm,晶体更加透明,如图5所示,粉末XRD图谱如图6(c)所示,表明其为纯相。The pure-phase Mg 4 Ta 2 O 9 powder synthesized from MgO and Ta 2 O 5 and MgO powder were ball milled and mixed at a molar ratio of 10:1, and put into an Ir crucible for growth. The growth power was the rated power of the equipment 36% of , the growth rate is 0.05mm/min, and the grown crystal size is Φ1.6mm×76mm. As shown in Figure 4, the powder XRD characterization of the crystal shows that it is a pure phase, as shown in Figure 6(b) . Using the same powder under the conditions of rated power of 37.5% and growth rate of 0.05mm/min, the size of the growth is Φ2.0mm×16mm, and the crystal is more transparent, as shown in Figure 5, and the powder XRD spectrum is shown in Figure 6(c ), indicating that it is a pure phase.

(3)Mg4Ta2O9晶体表征(3) Crystal characterization of Mg 4 Ta 2 O 9

如图6(a)、(b)和(c)所示,分别用过量10%的Mg(OH)2或MgO的Mg4Ta2O9粉料生长的Mg4Ta2O9棒状单晶粉末XRD图谱表明,所生长的晶体为纯相Mg4Ta2O9As shown in Figure 6(a), (b) and (c), Mg 4 Ta 2 O 9 rod-shaped single crystals grown with Mg 4 Ta 2 O 9 powder with an excess of 10% Mg(OH) 2 or MgO, respectively Powder XRD patterns show that the grown crystals are pure phase Mg 4 Ta 2 O 9 .

单晶X射线衍射数据分析,Mg4Ta2O9晶体为六方晶系,所属空间群为P-3c1(165),晶胞参数为a=0.51625(10)nm、c=1.4062(4)nm,密度为6.171g/cm3,精修结构常数为0.0356,证明其结晶质量较好。Single crystal X-ray diffraction data analysis, Mg 4 Ta 2 O 9 crystal is hexagonal, the space group is P-3c1(165), and the unit cell parameters are a=0.51625(10)nm, c=1.4062(4)nm , the density is 6.171g/cm 3 , and the refined structure constant is 0.0356, which proves that its crystal quality is good.

实施例2微下拉法生长Mg3Ta2O8晶体Example 2 Growth of Mg 3 Ta 2 O 8 crystals by micro pull-down method

将高纯粉末原料Mg(OH)2(99.999%)和Ta2O5(99.99%)按摩尔比4:1配料,共5g放入研钵中研磨混匀,220目过筛,将其放入装有ZrO2球的球磨罐中,在球磨机上球磨1h,将球磨后的料在研钵中再次研磨,220目过筛后,350MPa压制成Φ13mm×5mm大小的圆柱片,将其放入高温马弗炉中,设置预烧温度为1300℃,保温时间为16h,以100℃/h的速率升降温。得到的陶瓷圆柱片的相纯用粉末XRD进行表征,其图谱特征如图7(a)所示。发现未有Mg3Ta2O8相,是0.62Mg4Ta2O9+0.38MgTa2O6混合相,经相图分析研究,其组分大致处于Mg3Ta2O8的组分附近。Mix the high-purity powder raw materials Mg(OH) 2 (99.999%) and Ta 2 O 5 (99.99%) in a molar ratio of 4:1, put a total of 5g into a mortar, grind and mix, pass through a 220-mesh sieve, and put it into the put ZrO2 balls into a ball mill tank, mill on a ball mill for 1 hour, grind the ball milled material again in a mortar, sieve through 220 mesh, press 350MPa into cylindrical pieces with a size of Φ13mm×5mm, put them into In the high-temperature muffle furnace, set the pre-firing temperature to 1300°C, hold the temperature for 16 hours, and heat up and down at a rate of 100°C/h. The phase purity of the obtained ceramic cylinder was characterized by powder XRD, and its spectral features are shown in Figure 7(a). It is found that there is no Mg 3 Ta 2 O 8 phase, but a mixed phase of 0.62Mg 4 Ta 2 O 9 +0.38MgTa 2 O 6 . According to the phase diagram analysis, its composition is roughly in the vicinity of the composition of Mg 3 Ta 2 O 8 .

将合成陶瓷圆柱片放入如图1所示的Ir坩埚中,以MgTa2O6多晶棒做籽晶,将籽晶杆上移至籽晶顶端大致对准Ir坩埚锥形底部喷嘴,一切调节得当,关上生长腔室,使之处于密闭状态,抽真空12h,再通入Ar气,通过控制气氛进、出口的流量,使其压强稳定在1.5atm,腔内气体的流量控制在20mL/min,待气氛流量及压强稳定1h后,设置升温时间1h,升至额定功率的25%,保温一段时间,当熔液从喷嘴通孔流出,形成月牙形浸润液滴,保持在此功率1h,待其形貌稳定后,缓慢上移籽晶,将其与之连接,保持连接状态1h,缓慢调节生长功率,使熔区宽度最好小于坩埚喷嘴的直径且大于微细孔的直径。待一切就绪后,设置籽晶棒的下拉速度为0.2mm/h。通过调节功率进行多次缩颈扩肩过程,以加快自发成核结晶长大的速率。待看到所生长的晶体比之前的晶体要通透发亮,维持生长参数不变。持续等径生长,直至坩埚喷嘴处再无溶液流出。设置降温时间为10h,缓慢冷却至室温,至此生长结束。如图8所示,经历了大约20cm长的自发成核优化结晶质量的过程,浅黄透明的无宏观缺陷,大小为Φ1.2mm×19mm的Mg3Ta2O8晶体采用自发成核的方法被生长出来。优化后的生长功率为仪器最大功率的29.5%,生长速度为0.2mm/min。Put the synthetic ceramic cylinder into the Ir crucible as shown in Figure 1, use the MgTa 2 O 6 polycrystalline rod as the seed crystal, move the seed rod up to the top of the seed crystal and roughly align it with the conical bottom nozzle of the Ir crucible, everything Adjust properly, close the growth chamber, make it in a sealed state, vacuumize for 12 hours, and then introduce Ar gas. By controlling the flow rate of the atmosphere inlet and outlet, the pressure is stabilized at 1.5atm, and the flow rate of the gas in the chamber is controlled at 20mL/ min, after the atmosphere flow rate and pressure are stable for 1 hour, set the heating time for 1 hour, raise it to 25% of the rated power, keep it warm for a period of time, when the melt flows out from the nozzle through hole, a crescent-shaped infiltrating droplet is formed, and keep at this power for 1 hour, After the shape is stable, slowly move the seed crystal up and connect it, keep the connection state for 1 hour, and slowly adjust the growth power so that the width of the melting zone is preferably smaller than the diameter of the crucible nozzle and larger than the diameter of the micropore. After everything is ready, set the pull-down speed of the seed rod to 0.2mm/h. By adjusting the power, the process of necking and expanding shoulders is performed multiple times to speed up the rate of spontaneous nucleation and crystallization growth. When it is seen that the grown crystal is more transparent and brighter than the previous crystal, keep the growth parameters unchanged. Continue isodiametric growth until no solution flows out from the nozzle of the crucible. Set the cooling time to 10 h, and slowly cool down to room temperature, and the growth is over. As shown in Figure 8, after about 20 cm long spontaneous nucleation process to optimize the crystal quality, light yellow transparent Mg 3 Ta 2 O 8 crystals with no macroscopic defects and a size of Φ1.2mm×19mm were produced by spontaneous nucleation. grow out. The optimized growth power is 29.5% of the maximum power of the instrument, and the growth speed is 0.2mm/min.

任意部分切取单晶研磨至粉末状,进行XRD图谱测试,如图7(b)所示,表征为纯Mg3Ta2O8相。Any part of the single crystal was cut and ground into powder, and the XRD pattern test was performed, as shown in Figure 7(b), which was characterized as a pure Mg 3 Ta 2 O 8 phase.

进行单晶X射线衍射数据分析,Mg3Ta2O8晶体属正交晶系,所属空间群为Cmcm(63),晶格常数为a=0.38087(12)nm,b=1.0034(2)nm,c=1.0206(3)nm,密度为5.965g/cm3,精修结构常数为0.0207,证明其结晶质量良好,测试结构图如图9所示。Single crystal X-ray diffraction data analysis shows that the Mg 3 Ta 2 O 8 crystal belongs to the orthorhombic crystal system, the space group is Cmcm(63), and the lattice constants are a=0.38087(12)nm, b=1.0034(2)nm , c=1.0206(3)nm, the density is 5.965g/cm 3 , and the refined structure constant is 0.0207, which proves that its crystal quality is good. The test structure diagram is shown in Figure 9 .

实施例3微下拉法生长MgTa2O6晶体Example 3 Growth of MgTa 2 O 6 crystals by micro pull-down method

将原料Mg(OH)2(Noah chemical,99.999%)和Ta2O5(Aldrich,99.99%)按摩尔比1.15:1称量,共5g研钵中混匀,220目过筛,球磨1h,350MPa下,制备出Φ13mm×5mm的圆柱片,放入马弗炉中1400℃预烧8h,100℃/h升降温。粉末XRD,如图10(a)表明所得陶瓷片为纯相MgTa2O6。将合成的纯相MgTa2O6粉料与Mg(OH)2粉料以100:1的摩尔比球磨混匀,共5g干压成13mm直径的柱状,放入如图1所示的Ir坩埚中,以Y3Al5O12(简称YAG)单晶棒做籽晶,籽晶上端切平抛光,并保持清洁干燥,固定在空心得Al2O3籽晶杆上。调节坩埚等各类组件和籽晶轴线处在中垂线上,且使得籽晶上表面靠近坩埚喷嘴下表面。密闭球形生长腔室,抽真空12h,通入保护气氛Ar,调节进、出气体流量至20mL/min,使其气压稳定在1.5atm。待气氛流量及压强稳定1h后,设置升温速率1h升温至额定功率的29.6%,保温1h,待坩埚喷嘴通孔流出熔液,且慢慢扩大蔓延形成弯月面,上移籽晶与之对接,保温1h,待固液界面无任何变化,设置微下拉速度为0.2mm/min进行生长,根据生长界面的变动情况,在额定功率的29.6~34%区间微调。晶体生长完毕后,8h降温后取出,得到如图11所示,颜色呈黑色,色泽鲜亮,直径2~3mm,长60mm,无宏观缺陷。黑色是由于生长气氛为还原性气氛Ar气,在空气中1000℃退火12h会变成淡黄色透明。The raw materials Mg(OH) 2 (Noah chemical, 99.999%) and Ta 2 O 5 (Aldrich, 99.99%) were weighed at a molar ratio of 1.15:1, mixed in a 5g mortar, sieved at 220 mesh, and ball milled for 1 hour. At 350MPa, a cylindrical sheet of Φ13mm×5mm was prepared, put into a muffle furnace for pre-calcination at 1400°C for 8h, and the temperature was raised and lowered at 100°C/h. Powder XRD, as shown in Figure 10(a), shows that the obtained ceramic sheet is pure phase MgTa 2 O 6 . Mix the synthesized pure-phase MgTa2O6 powder and Mg(OH) 2 powder with a molar ratio of 100:1 by ball milling, and dry-press a total of 5 g into a column with a diameter of 13 mm, and put it into an Ir crucible as shown in Figure 1 In this method, Y 3 Al 5 O 12 (abbreviated as YAG) single crystal rod is used as the seed crystal, the upper end of the seed crystal is cut flat and polished, kept clean and dry, and fixed on the hollow Al 2 O 3 seed rod. Adjust various components such as the crucible and the axis of the seed crystal to be on the vertical line, and make the upper surface of the seed crystal close to the lower surface of the crucible nozzle. Seal the spherical growth chamber, evacuate it for 12 hours, pass in the protective atmosphere Ar, adjust the flow rate of the incoming and outgoing gas to 20mL/min, and stabilize the air pressure at 1.5atm. After the atmosphere flow rate and pressure are stable for 1 hour, set the heating rate for 1 hour to raise the temperature to 29.6% of the rated power, keep it warm for 1 hour, wait for the melt to flow out from the through hole of the crucible nozzle, and slowly expand and spread to form a meniscus, and move the seed crystal up to connect with it , keep warm for 1h, and wait for no change in the solid-liquid interface, set the micro-pulling speed to 0.2mm/min for growth, and fine-tune it in the range of 29.6-34% of the rated power according to the change of the growth interface. After the crystal growth was completed, it was taken out after cooling down for 8 hours. As shown in Figure 11, the obtained crystal was black in color and bright in color, with a diameter of 2-3 mm and a length of 60 mm, without macroscopic defects. The black is because the growth atmosphere is a reducing atmosphere Ar gas, and it will become light yellow and transparent after annealing at 1000°C for 12 hours in air.

任意切取部分单晶研磨致粉末状,进行XRD图谱测试,表征为纯相MgTa2O6,如图10(b)所示。A part of the single crystal was randomly cut and ground into powder, and tested by XRD pattern, which was characterized as pure phase MgTa 2 O 6 , as shown in Figure 10(b).

进行单晶X射线衍射数据分析,MgTa2O6晶体为属四方晶系,所属空间群为P42/mnm(136),晶格常数为a=0.46821(3)nm、c=0.91382(7)nm,晶体密度为8.03265g/cm3,精修参数RAII为0.026,证明结晶质量较好。测试结构图如图12所示。对所生长晶体进行切割,定向、加工等处理,用于各项性能测试。Single crystal X-ray diffraction data analysis shows that the MgTa 2 O 6 crystal belongs to the tetragonal system, the space group is P42/mnm(136), and the lattice constants are a=0.46821(3)nm, c=0.91382(7)nm , the crystal density is 8.03265g/cm 3 , and the refinement parameter RAII is 0.026, which proves that the crystal quality is good. The test structure diagram is shown in Figure 12. The grown crystals are cut, oriented, and processed for various performance tests.

以上所述内容仅为本发明构思下的基本说明,而依据本发明的技术方案所做的任何等效变换,均应属于本发明的保护范围。The above content is only a basic description of the concept of the present invention, and any equivalent transformation made according to the technical solution of the present invention shall fall within the scope of protection of the present invention.

Claims (6)

1. a kind of tantalic acid magnesium crystal, it is characterised in that:Its molecular formula is Mg4Ta2O9, belong to hexagonal crystal system, affiliated space group is P- 3c1 (165), cell parameter are a=0.51625 (10) nm, c=1.4062 (4) nm, density 6.171g/cm3, refined structure Constant is 0.0356.
2. a kind of tantalic acid magnesium crystal, it is characterised in that:Its molecular formula is Mg3Ta2O8, belong to rhombic system, affiliated space group is Cmcm (63), lattice constant is a=0.38087 (12) nm, b=1.0034 (2) nm, c=1.0206 (3) nm, density 5.965g/ cm3, refined structure constant is 0.0207.
3. a kind of tantalic acid magnesium crystal, it is characterised in that:Its molecular formula is MgTa2O6, belong to tetragonal crystal system, affiliated space group is P42/ Mnm (136), lattice constant are a=0.46821 (3) nm, c=0.91382 (7) nm, crystalline density 8.03265g/cm3, essence It is 0.026 to repair parameter RAII.
4. a kind of as claimed in claim 1 prepare Mg4Ta2O9The method of crystal, it is characterised in that include the following steps:
1) according to 5.2:1 or 5.6:1 molar ratio weighs pure phase Mg (OH)2And Ta2O5, it is ground, is sieved, ball milling, compacting Into slice of cylinder, 1300 DEG C or 1350 DEG C of pre-burning 16h, temperature rate is 100 DEG C/h;Or according to 4.04:1 molar ratio claims Take pure phase MgO and Ta2O5Raw material is ground, and sieving, ball milling is pressed into slice of cylinder, 1400 DEG C of pre-burning 2h, and temperature rate is 1400℃/h;
2) by Mg4Ta2O9With Mg (OH)2Or MgO powders are with 10:1 molar ratio weighing, ball milling mixing, are put into Ir crucibles, with Mg4Ta2O9Monocrystal rod does seed crystal, vacuumizes 12h, is passed through protective atmosphere Ar, adjusts into and out of gas flow to 20mL/min, makes it Stable gas pressure is grown for 0.05mm/min in 1.5atm, the micro- drop-down speed of setting, after growth, after 3h cools down, is obtained A kind of tantalic acid magnesium crystal described in claims 1.
5. the method for a kind of tantalic acid magnesium crystal described in claims 2, it is characterised in that include the following steps:
1) according to 4:1 molar ratio weighs pure phase Mg (OH)2And Ta2O5, it being ground, is sieved, ball milling is pressed into slice of cylinder, 1300 DEG C of pre-burning 16h, 100 DEG C/h heating and cooling;
2) synthesis ceramic cylinder piece is put into as in Ir crucibles, with MgTa2O6Polycrystalline rod does seed crystal, vacuumizes 12h, then be passed through Ar Gas, pressure stabilization are 0.2mm/min in 20mL/min, setting drop-down speed in 1.5atm, flow control, and spontaneous nucleation is adjusted Power carries out multiple necking down and expands shoulder process, optimizes crystalline quality, and setting temperature fall time is 10h, but to room temperature, so far grown junction Beam obtains a kind of tantalic acid magnesium crystal described in claims 2.
6. the method for a kind of tantalic acid magnesium crystal described in claims 3, it is characterised in that include the following steps:
1) according to 1.15:1 molar ratio weighs pure phase Mg (OH)2And Ta2O5, it is ground, sieving, ball milling are pressed into cylinder Piece, 1400 DEG C of pre-burning 8h, 100 DEG C/h heating and cooling;
2)MgTa2O6With Mg (OH)2Powder is with 10:1 molar ratio weighing, ball milling mixing, are put into Ir crucibles, with Y3Al5O12It is single Crystal bar does seed crystal, vacuumizes 12h, is passed through protective atmosphere Ar, adjusts into and out of gas flow to 20mL/min, makes its stable gas pressure In 1.5atm, micro- drop-down speed is set to be grown for 0.2mm/min, after crystal growth, taken out after 8h coolings, in air In 1000 DEG C annealing 12h after become pale yellow transparent, obtain a kind of tantalic acid magnesium crystal described in claims 3.
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