CN108154832B - Display device and detection circuit and method therefor - Google Patents
Display device and detection circuit and method therefor Download PDFInfo
- Publication number
- CN108154832B CN108154832B CN201810002604.8A CN201810002604A CN108154832B CN 108154832 B CN108154832 B CN 108154832B CN 201810002604 A CN201810002604 A CN 201810002604A CN 108154832 B CN108154832 B CN 108154832B
- Authority
- CN
- China
- Prior art keywords
- transistor
- node
- signal
- detection
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 132
- 238000000034 method Methods 0.000 title claims abstract description 9
- 230000010354 integration Effects 0.000 abstract description 11
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/4473—Phototransistor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
本发明公开了一种显示装置以及用于显示装置的检测电路和方法，电路，包括设置于显示装置的像素单元中的跟随晶体管；第一晶体管，第一晶体管的第一端与第一预设电源相连，第一晶体管的第二端与跟随晶体管的第一端相连并具有第一节点；第二晶体管，第二晶体管的第一端与跟随晶体管的第一端相连并具有第二节点，第二晶体管的第二端与第二预设电源相连，其中，第一晶体管和第二晶体管中的至少一个用于感应光线；检测单元，检测单元通过检测第一节点或第二节点的信号以获取光线的强度，检测单元还通过检测第二节点的信号以获取待测源的信号变化，从而，通过共用跟随晶体管能够实现光检测功能与信号检测功能的集成，节省面积，且通过电流共用节约功耗。
The invention discloses a display device and a detection circuit and method for the display device. The circuit includes a follower transistor arranged in a pixel unit of the display device; a first transistor, a first end of the first transistor is connected to a first preset The power supply is connected, the second end of the first transistor is connected to the first end of the follower transistor and has a first node; the second transistor, the first end of the second transistor is connected to the first end of the follower transistor and has a second node, the first The second end of the two transistors is connected to the second preset power supply, wherein at least one of the first transistor and the second transistor is used for sensing light; the detection unit detects the signal of the first node or the second node to obtain the The detection unit also obtains the signal change of the source to be measured by detecting the signal of the second node, so that the integration of the light detection function and the signal detection function can be realized by sharing the follower transistor, saving area, and saving power through current sharing. consumption.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to a detection circuit for a display device, a display device having the same, and a detection method for a display device.
Background
The display device in the related art can output a potential using the following effect of the following transistor, and can also detect ambient light by a separate ambient light detection unit. However, the related art has problems that the signal following function and the ambient light detecting function are realized by independent circuits, the integration level is not high, the occupied space is large, and the integrated and miniaturized design is not facilitated.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. To this end, an object of the present invention is to provide a detection circuit for a display device capable of realizing integration of a light detection function and a signal detection function.
Another object of the present invention is to provide a display device. It is a further object of the present invention to provide a detection method for a display device.
In order to achieve the above object, an embodiment of the present invention provides a detection circuit for a display device, including: a follower transistor disposed in a pixel unit of the display device; a first transistor, a first end of which is connected to a first preset power supply, and a second end of which is connected to a first end of the following transistor and has a first node; a second transistor, a first end of which is connected to the first end of the following transistor and has a second node, and a second end of which is connected to the second preset power supply, wherein at least one of the first transistor and the second transistor is used for sensing light; the detection unit is used for detecting the signal of the first node or the second node to obtain the intensity of the light, and the detection unit is also used for detecting the signal of the second node to obtain the signal change of the source to be detected.
According to the detection circuit for the display device provided by the embodiment of the invention, the first end of the first transistor is connected with the first preset power supply, the second end of the first transistor is connected with the first end of the following transistor arranged in the pixel unit of the display device and is provided with the first node, the first end of the second transistor is connected with the first end of the following transistor and is provided with the second node, the second end of the second transistor is connected with the second preset power supply, the light is sensed through at least one of the first transistor and the second transistor, the detection unit acquires the intensity of the light by detecting the signal of the first node or the second node, and the signal of the source to be detected is acquired by detecting the signal of the second node, so that the integration of the optical detection function and the signal detection function can be realized by sharing the following transistor, the area is saved, and the integration is facilitated, The miniaturized design, moreover, can also realize the electric current sharing, effectively practice thrift the consumption.
In addition, the detection circuit for a display device according to the above embodiment of the present invention may further have the following additional technical features:
according to an embodiment of the present invention, the control terminal of the follower transistor is configured to receive a reset signal and a signal of the source to be tested, wherein the detection unit is further configured to: when the control end of the following transistor receives the reset signal, the current signal of the first node or the second node is detected to obtain the intensity of the light, the current signal of the second node is detected to obtain a background signal, and when the control end of the following transistor receives the signal of the source to be detected, the current signal of the second node is detected, and the signal change of the source to be detected is obtained according to the current signal of the second node and the background signal.
According to one embodiment of the invention, the detection unit comprises: the first detection component is connected with the first node and is used for detecting a signal of the first node; and the first detection component is used for detecting the signal of the second node.
According to one embodiment of the invention, the detection unit comprises: a third detection assembly; a first end of the first switching component is connected with the first node, a second end of the first switching component is connected with the second node, and a third end of the first switching component is connected with the third detection component;
wherein the third detecting element detects a signal of the first node when the first terminal and the third terminal of the first switching element are turned on, and the third detecting element detects a signal of the second node when the second terminal and the third terminal of the first switching element are turned on.
According to one embodiment of the invention, the detection unit comprises: and the fourth detection component detects the current signal of the second node to acquire the intensity of the light when the control end of the following transistor receives the reset signal, takes the second signal of the second node as the background signal, detects the current signal of the second node when the control end of the following transistor receives the signal of the source to be detected, and acquires the signal change of the source to be detected according to the current signal of the second node and the background signal.
According to an embodiment of the present invention, the detection circuit for a display device further includes a bias unit connected to the control terminal of the first transistor, the bias unit including: and a first end of the third transistor is connected with a third preset power supply, a second end of the third transistor is connected with the second preset power supply, a control end of the third transistor is connected with the first end of the third transistor, and a control end of the third transistor is also connected with the second transistor.
According to an embodiment of the present invention, the first transistor is diode-connected.
In order to achieve the above object, another embodiment of the present invention provides a display device, which includes the detection circuit for a display device.
According to the display device of the embodiment of the invention, the detection circuit for the display device of the embodiment can realize the integration of the light detection function and the signal detection function, save the area, be beneficial to the integrated and miniaturized design, and realize the current sharing, thereby effectively saving the power consumption.
In order to achieve the above object, a detecting method for a display device according to another embodiment of the present invention includes a following transistor, a first transistor and a second transistor, the following transistor, the first transistor, the second transistor, the first terminal of the following transistor, the second transistor, the first node, the second transistor, the first transistor, the second transistor, the: sensing light through at least one of the first and second transistors; detecting signals of the first node or the second node to acquire the intensity of the light; and detecting the signal of the second node to acquire the signal change of the source to be detected.
According to the detection method for the display device provided by the embodiment of the invention, light is sensed through at least one of the first transistor and the second transistor, the intensity of the light is obtained by detecting the signal of the first node or the second node, and the signal change of the source to be detected is obtained by detecting the signal of the second node, so that the integration of the optical detection function and the signal detection function can be realized through the shared following transistor, the area is saved, the integrated and miniaturized design is facilitated, the current sharing can be realized, and the power consumption is effectively saved.
In addition, the detection method for the display device according to the above embodiment of the present invention may further have the following additional technical features:
according to an embodiment of the present invention, the control terminal of the follower transistor is configured to receive a reset signal and a signal of the source to be tested, and the method further includes: when the control end of the following transistor receives the reset signal, detecting the current signal of the first node or the second node to obtain the intensity of the light, and detecting the current signal of the second node to obtain a background signal; and when the control end of the following transistor receives the signal of the source to be detected, detecting the current signal of the second node, and acquiring the signal change of the source to be detected according to the current signal of the second node and the background signal.
Drawings
Fig. 1 is a circuit schematic diagram of a detection circuit for a display device according to an embodiment of the present invention;
FIG. 2 is a circuit schematic of a detection circuit for a display device according to one embodiment of the present invention;
fig. 3 is a circuit schematic diagram of a detection circuit for a display device according to another embodiment of the present invention;
FIG. 4 is a circuit schematic of a detection circuit for a display device according to yet another embodiment of the present invention;
fig. 5 is a circuit schematic diagram of a detection circuit for a display device according to still another embodiment of the present invention;
FIG. 6 is a circuit schematic of a pixel cell in a detection circuit for a display device according to one embodiment of the present invention;
fig. 7 is a flowchart of a detection method for a display device according to an embodiment of the present invention; and
fig. 8 is a flowchart of a detection method for a display device according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
A detection circuit for a display device, a display device having the same, and a detection method for a display device according to embodiments of the present invention are described below with reference to the accompanying drawings.
Fig. 1 is a circuit schematic diagram of a detection circuit for a display device according to an embodiment of the present invention. As shown in fig. 1, the detection circuit for a display device includes: a follower transistor MSF, a first transistor ML, a second transistor MB and a detection unit 10.
Wherein, the following transistor MSF is disposed in a pixel unit of the display device. In an embodiment of the present invention, the detection circuit for a display device according to an embodiment of the present invention may be implemented based on the pixel circuit shown in fig. 6, in other words, the follower transistor MSF may be the follower transistor M1 in the pixel circuit shown in fig. 6. The pixel circuit shown in fig. 6 may be an active pixel circuit, and the source follower is used to output the potential in the pixel circuit shown in fig. 6.
A first terminal of the first transistor ML is connected to a first preset power supply VDD, and a second terminal of the first transistor ML is connected to a first terminal of the following transistor MSF and has a first node J1; a first terminal of the second transistor MB is connected to a first terminal of the following transistor MSF and has a second node J2, and a second terminal of the second transistor MB is connected to a second preset power supply VSS, wherein at least one of the first transistor ML and the second transistor MB is used for sensing light; the detecting unit 10 detects the signal of the first junction J1 or the second junction J2 to obtain the intensity of the light, and the detecting unit 10 also detects the signal of the second junction J2 to obtain the signal variation of the source to be detected. The voltage of the first predetermined power source VDD is higher than the voltage of the second predetermined power source VSS, and the voltage of the second predetermined power source VSS may be a reference ground voltage.
Note that the transistors for sensing light are not covered with the light shielding material, and the transistors for sensing light may be covered with the light shielding material, that is, when the first transistor ML is used for sensing light, the first transistor ML is not covered with the light shielding material, and the follower transistor MSF and the second transistor MB are covered with the light shielding material, and when the second transistor MB is used for sensing light, the second transistor MB is not covered with the light shielding material, and the follower transistor MSF and the first transistor ML are covered with the light shielding material.
It should be noted that the first transistor ML, the following transistor MSF and the second transistor MB may be thin film transistors TFT, and the thin film transistors TFT may generate different current magnitudes under the influence of light.
That is to say, the main loop of the detection circuit according to the embodiment of the present invention may be composed of three devices, i.e., a first transistor ML, a following transistor MSF and a second transistor MB, and both the first transistor ML and the second transistor MB may be used as devices for sensing light, for example, the embodiment of fig. 2 and 3 senses light through the second transistor MB, or, for example, the embodiment of fig. 4 senses light through the first transistor ML and the following transistor MSF is added with a light shielding material. When the first transistor ML or the second transistor MB receives light, the current thereof is changed, so that Vgs (gate-source voltage) of the first transistor ML is also changed, that is, the voltage VCS of the first node J1 is changed, and the voltage VSF of the second node J2 is also changed, so that the intensity of the light can be obtained by detecting the voltage VCS of the first node J1 or the voltage VSF of the second node J2 by the detecting unit 10. Also, the follower transistor MSF may be further utilized to transfer the signal of the source to be tested to the second node J2, and thus, the signal of the source to be tested may be acquired by detecting the voltage VSF of the second node J2 through the detection unit 10. Therefore, the device of the following transistor MSF can be repeatedly used, the area is saved, and the power consumption can be saved due to the current sharing.
Further, the control terminal of the follower transistor MSF is configured to receive the reset signal VS and the signal VB of the source to be tested, wherein the detecting unit 10 is further configured to: when the control end of the following transistor MSF receives a reset signal, the current signal of the first node J1 or the second node J2 is detected to obtain the intensity of light, and the current signal of the second node J2 is detected to obtain a background signal, and when the control end of the following transistor MSF receives a signal of a source to be detected, the current signal of the second node J2 is detected, and a signal change of the source to be detected is obtained according to the current signal and the background signal of the second node J2, for example, the signal change of the source to be detected is obtained according to the difference between the current signal and the background signal of the second node J2.
It should be noted that, before controlling the following transistor MSF to follow the signal of the source to be measured and output, the following transistor MSF is reset. Specifically, a reset signal, for example, a fixed level signal, may be applied to the control terminal of the following transistor MSF to reset the following transistor MSF, and after the reset, the signal of the source to be measured is applied to the control terminal of the following transistor MSF, and the following transistor MSF follows the signal output of the source to be measured.
That is, the detecting unit 10 can first detect the signal of the first junction J1 or the second junction J2 to obtain the intensity of the light, and then detect the signal of the second junction J2 to obtain the signal variation of the source to be detected.
Specifically, it is assumed that the reset signal is applied to the control terminal of the follower transistor MSF at the first time, and at this time, the current signal of the first node J1 or the second node J2, i.e., the voltage of the first node J1 or the second node J2 at the first time can be detected, and the intensity of the light can be obtained according to the voltage of the first node J1 or the second node J2 at the first time, and the voltage of the second node J2 at the first time can be used as the background signal. Next, at the second time, the signal of the source to be tested is applied to the control terminal of the follower transistor MSF, and at this time, the current signal of the second node J2, i.e., the voltage of the second node J2 at the second time, can be detected, and the detected signal of the source to be tested is obtained according to the difference between the voltage of the second node J2 at the second time and the voltage of the second node J2 at the first time.
Embodiments of a detection circuit for a display device are described in detail below with reference to fig. 2-4.
Specifically, according to the embodiment of fig. 2, the detection unit 10 includes: a first sensing assembly 11 and a second sensing assembly 12. Wherein, the first detecting element 11 is connected to the first node J1, and the first detecting element 11 is used for detecting the signal of the first node J1; the second detection assembly is connected with the second node J2, and the first detection assembly is used for detecting the signal of the second node J2. More specifically, the first sensing assembly 11 includes a first amplifier a1, and the second sensing assembly 12 includes a second amplifier a 2.
The second transistor MB senses light as an example. First, the control terminal of the follower transistor MSF receives a reset signal to be reset at a predetermined fixed level. When the second transistor MB is illuminated, the current of the second transistor MB is changed, so that the Vgs of the first transistor ML is changed, the voltage VCS of the first node J1 is changed, the voltage VCS of the first node J1 is amplified by the first amplifier a1, and then the first detection voltage VO1 is output, and the intensity of the light can be obtained according to the first detection voltage VO 1. At this time, the voltage VSF of the second node J2 may be collected in advance, the voltage VSF of the second node J2 is amplified by the second amplifier a2, and then the second detection voltage VO2 is output, and the second detection voltage VO2 is used as the background value VO2_ 1; next, the control end of the follower transistor MSF receives a signal of a source to be detected (e.g., a piezoelectric sensor, etc.), a signal change of the source to be detected is transmitted to the second node J2 through the follower transistor MSF, the voltage VSF of the second node J2 is amplified by the second amplifier a2 to obtain a third detection voltage VO2_2, and the background value is removed by subtracting VO2_1 from VO2_2 to obtain a signal change of the source to be detected.
In particular, according to the embodiment of fig. 3, the detection unit 10 comprises: a third detecting element 13 and a first switching element 14, wherein a first end of the first switching element 14 is connected to the first junction J1, a second end of the first switching element 14 is connected to the second junction J2, and a third end of the first switching element 14 is connected to the third detecting element 13; wherein the third detecting element 13 detects the signal of the first node J1 when the first terminal and the third terminal of the first switching element 14 are connected, and the third detecting element 13 detects the signal of the second node J2 when the second terminal and the third terminal of the first switching element 14 are connected. More specifically, the third detection assembly 13 includes a third amplifier a 3.
That is, compared with the embodiment of fig. 2, the present embodiment realizes the signal detection of the first node J1 and the second node J2 by the switching action of the first switching component 14, thereby saving the detection components and reducing the cost.
The second transistor MB senses light as an example. First, the control terminal of the follower transistor MSF receives a reset signal to be reset at a predetermined fixed level. When the second transistor MB is illuminated, the current of the second transistor MB is changed, so that the Vgs of the first transistor ML is changed, the voltage VCS of the first node J1 is changed, the first terminal and the third terminal of the first switching element 14 are first connected, the voltage VCS of the first node J1 is amplified by the third amplifier A3 and then outputs the first detection voltage VO1, and the intensity of the light can be obtained according to the first detection voltage VO 1. Then, the second terminal and the third terminal of the first switching element 14 are connected, at this time, the voltage VSF of the second node J2 can be collected in advance, the voltage VSF of the second node J2 is amplified by the third amplifier A3 and then outputs a second detection voltage VO2, and the second detection voltage VO2 is used as a background value VO2_ 1; next, the control end of the follower transistor MSF receives a signal of a source to be detected (e.g., a piezoelectric sensor, etc.), a signal change of the source to be detected is transmitted to the second node J2 through the follower transistor MSF, the voltage VSF of the second node J2 is amplified by the third amplifier A3 to obtain a third detection voltage VO2_2, and the background value is removed by subtracting VO2_1 from VO2_2 to obtain a signal change of the source to be detected.
In particular, according to the embodiment of fig. 4, the detection unit 10 comprises: and the fourth detection element 15, the fourth detection element 15 is connected to the second node J2, and the fourth detection element 15 detects the current signal of the second node J2 to obtain the intensity of the light when the control end of the following transistor MSF receives the reset signal VS, and uses the second signal of the second node J2 as the background signal, and detects the current signal of the second node J2 when the control end of the following transistor MSF receives the signal VB of the source to be detected, so as to obtain the signal change of the source to be detected according to the current signal and the background signal of the second node J2. More specifically, the fourth detection assembly 15 includes a fourth amplifier a 4.
The first transistor ML senses light for explanation. The first transistor ML is regarded as a device for detecting ambient light, and the follower transistor MSF and the second transistor MB are covered with a light shielding material. When the first transistor ML is used for detecting ambient light, the follower transistor MSF receives a reset signal to perform reset, and since the first transistor ML receives light, the voltage VCS of the first node J1 is changed, and the VSF of the second node J2 is indirectly changed, so that the ambient light change can be known through the fourth amplifier a4, and before detecting the signal, the influence on the ambient light is firstly amplified to obtain a current background value (i.e., the previous step of detecting the ambient light), that is, the voltage VSF of the second node J2 is amplified by the fourth amplifier a4 to output the fourth detection voltage VO4, the intensity of the light can be obtained according to the fourth detection voltage VO4, and meanwhile, the fourth detection voltage VO4 can also be used as the background value.
Next, the control end of the follower transistor MSF receives a signal of a source to be detected (e.g., a piezoelectric sensor, etc.), a signal change of the source to be detected is transmitted to the second node J2 through the follower transistor MSF, the voltage VSF of the second node J2 is amplified by the fourth amplifier a4 to obtain a fifth detection voltage VO5, and the background value can be eliminated by subtracting VO4 from VO5 to obtain a signal change of the source to be detected. Therefore, not only can the area be saved, but also the routing of the first node J1 can be omitted.
In some embodiments of the present invention, as shown in fig. 1-4, the first transistor ML, the follower transistor MSF, and the second transistor MB may all be N-type devices. In other embodiments of the present invention, the first transistor ML may be replaced with a P-type device, and the follower transistor MSF and the second transistor MB are both N-type devices. Similarly, the first transistor ML, the following transistor MSF, and the second transistor MB may also be P-type devices; alternatively, the first transistor ML may be replaced with an N-type device, and the follower transistor MSF and the second transistor MB may be P-type devices.
Further, according to an embodiment of the present invention, as shown in fig. 2 to 5, the detection circuit for a display device further includes a bias unit 20, the bias unit 20 is connected to the control terminal of the second transistor MB, and the bias unit 20 includes: and a first end of the third transistor MA is connected with a third preset power supply, a second end of the third transistor MA is connected with a second preset power supply VSS, a control end of the third transistor MA is connected with a first end of the third transistor MA, and a control end of the third transistor MA is further connected with the second transistor MB. Thus, the third transistor MA may be used to provide a bias voltage for the second transistor MB.
Also, according to an embodiment of the present invention, as shown in fig. 2 to 5, the first transistor ML employs a diode connection. That is, when the first transistor ML is an N-type device, the first terminal of the first transistor ML is connected to the control terminal of the first transistor ML, and when the first transistor ML is a P-type device, the second terminal of the first transistor ML is connected to the control terminal of the first transistor ML.
Thus, the first transistor ML is diode-connected as a load, thereby saving a bias circuit.
In summary, according to the detection circuit for a display device provided by the embodiment of the invention, the first terminal of the first transistor is connected to the first preset power supply, the second terminal of the first transistor is connected to the first terminal of the following transistor in the pixel unit of the display device and has a first node, the first terminal of the second transistor is connected to the first terminal of the following transistor and has a second node, the second terminal of the second transistor is connected to the second preset power supply, the detection unit detects the signal of the first node or the second node to obtain the intensity of the light by sensing the light of at least one of the first transistor and the second transistor, and the detection unit further detects the signal of the second node to obtain the signal change of the source to be detected, so that the integration of the optical detection function and the signal detection function can be realized by sharing the following transistor, the area is saved, and the integration is facilitated, The miniaturized design, moreover, can also realize the electric current sharing, effectively practice thrift the consumption.
In addition, an embodiment of the present invention further provides a display device, including the detection circuit for a display device of the foregoing embodiment.
According to the display device of the embodiment of the invention, the detection circuit for the display device of the embodiment can realize the integration of the light detection function and the signal detection function, save the area, be beneficial to the integrated and miniaturized design, and realize the current sharing, thereby effectively saving the power consumption.
In correspondence with the detection circuit for a display device provided in the above embodiment, an embodiment of the present invention further provides a detection method for a display device, and since the detection method for a display device provided in the embodiment of the present invention corresponds to the detection circuit for a display device provided in the above embodiment, the implementation of the detection circuit for a display device described above is also applicable to the detection method for a display device provided in the present embodiment, and will not be described in detail in the present embodiment.
Fig. 7 is a flowchart of a detection method for a display device according to an embodiment of the present invention. The detection device of the display device comprises a following transistor, a first transistor and a second transistor, wherein the following transistor, the first transistor and the second transistor are arranged in a pixel unit of the display device, a first end of the first transistor is connected with a first preset power supply, a second end of the first transistor is connected with a first end of the following transistor and is provided with a first node, a first end of the second transistor is connected with a first end of the following transistor and is provided with a second node, and a second end of the second transistor is connected with a second preset power supply. As shown in fig. 7, the method comprises the steps of:
s1: sensing light through at least one of the first transistor and the second transistor;
s2: detecting signals of the first node or the second node to acquire the intensity of the light;
s3: and detecting the signal of the second node to acquire the signal change of the source to be detected.
According to an embodiment of the present invention, the control terminal of the follower transistor is used for receiving the reset signal and the signal of the source to be tested, as shown in fig. 8, the method further includes:
s10: when the control end of the following transistor receives a reset signal, detecting a current signal of the first node or the second node to obtain the intensity of light, and detecting a current signal of the second node to obtain a background signal;
s20: and when the control end of the following transistor receives a signal of the source to be detected, detecting the current signal of the second node, and acquiring the signal change of the source to be detected according to the current signal and the background signal of the second node.
According to the detection method for the display device provided by the embodiment of the invention, light is sensed through at least one of the first transistor and the second transistor, the intensity of the light is obtained by detecting the signal of the first node or the second node, and the signal change of the source to be detected is obtained by detecting the signal of the second node, so that the integration of the optical detection function and the signal detection function can be realized through the shared following transistor, the area is saved, the integrated and miniaturized design is facilitated, the current sharing can be realized, and the power consumption is effectively saved.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810002604.8A CN108154832B (en) | 2018-01-02 | 2018-01-02 | Display device and detection circuit and method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810002604.8A CN108154832B (en) | 2018-01-02 | 2018-01-02 | Display device and detection circuit and method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108154832A CN108154832A (en) | 2018-06-12 |
| CN108154832B true CN108154832B (en) | 2021-04-02 |
Family
ID=62460474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810002604.8A Expired - Fee Related CN108154832B (en) | 2018-01-02 | 2018-01-02 | Display device and detection circuit and method therefor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108154832B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150682A (en) * | 1997-05-30 | 2000-11-21 | Canon Kabushiki Kaisha | Photoelectric conversion device and image sensor |
| US7977717B1 (en) * | 2009-02-25 | 2011-07-12 | ON Semiconductor Trading, Ltd | Pixel sensing circuit |
| CN105789202A (en) * | 2016-05-20 | 2016-07-20 | 京东方科技集团股份有限公司 | Active pixel sensor circuit, driving method and image sensor |
| CN106971172A (en) * | 2017-04-13 | 2017-07-21 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition detection circuit, touch-screen and display device |
| CN106982337A (en) * | 2017-04-27 | 2017-07-25 | 京东方科技集团股份有限公司 | A kind of cmos image sensor and its image element circuit, driving method |
| CN107204172A (en) * | 2017-06-02 | 2017-09-26 | 京东方科技集团股份有限公司 | Image element circuit and its driving method, display panel |
| CN107426513A (en) * | 2017-07-25 | 2017-12-01 | 京东方科技集团股份有限公司 | CMOS active pixel sensor and its driving method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130423A (en) * | 1998-07-10 | 2000-10-10 | Pixel Cam, Inc. | Method and apparatus for a CMOS image sensor with a distributed amplifier |
| US8466402B2 (en) * | 2010-10-25 | 2013-06-18 | Aptina Imaging Corporation | Imaging pixels with shielded floating diffusions |
| US9631974B2 (en) * | 2011-12-19 | 2017-04-25 | Universität Zürich | Photoarray, particularly for combining sampled brightness sensing with asynchronous detection of time-dependent image data |
-
2018
- 2018-01-02 CN CN201810002604.8A patent/CN108154832B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150682A (en) * | 1997-05-30 | 2000-11-21 | Canon Kabushiki Kaisha | Photoelectric conversion device and image sensor |
| US7977717B1 (en) * | 2009-02-25 | 2011-07-12 | ON Semiconductor Trading, Ltd | Pixel sensing circuit |
| CN105789202A (en) * | 2016-05-20 | 2016-07-20 | 京东方科技集团股份有限公司 | Active pixel sensor circuit, driving method and image sensor |
| CN106971172A (en) * | 2017-04-13 | 2017-07-21 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition detection circuit, touch-screen and display device |
| CN106982337A (en) * | 2017-04-27 | 2017-07-25 | 京东方科技集团股份有限公司 | A kind of cmos image sensor and its image element circuit, driving method |
| CN107204172A (en) * | 2017-06-02 | 2017-09-26 | 京东方科技集团股份有限公司 | Image element circuit and its driving method, display panel |
| CN107426513A (en) * | 2017-07-25 | 2017-12-01 | 京东方科技集团股份有限公司 | CMOS active pixel sensor and its driving method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108154832A (en) | 2018-06-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9535531B2 (en) | Active matrix organic light emitting diode pixel unit circuit, display panel and electronic product | |
| JP3581031B2 (en) | Photodetector | |
| JP2008008724A (en) | Current detection circuit | |
| CN108615491B (en) | Aging detection circuit, aging compensation module and display panel | |
| US20100097350A1 (en) | Photo sensing device, photo sensing circuit, touch panel, and method of sensing output value of photo sensing element | |
| JP6483150B2 (en) | Radiation detector | |
| US20160004364A1 (en) | Touch sensing circuit and method, touch screen and display device | |
| US6982559B2 (en) | Accurate and efficient sensing circuit and method for bi-directional signals | |
| US20150263211A1 (en) | Optical sensor, and electronic apparatus | |
| US8373124B2 (en) | Infrared detection circuit, sensor device, and electronic instrument | |
| JP2011075338A (en) | Magnetic sensor circuit | |
| US20150102828A1 (en) | Capacitance measurement of high voltage device | |
| US9461635B2 (en) | Signal processing circuit | |
| CN108154832B (en) | Display device and detection circuit and method therefor | |
| US8835829B2 (en) | Image sensor formed by silicon rich oxide material | |
| US8081176B2 (en) | Photosensor for display device | |
| US9508402B2 (en) | Readout device, dual-function readout device, and detecting circuit thereof | |
| JP3974902B2 (en) | Thermal infrared detector | |
| US9006638B2 (en) | Dual-mode capacitive transimpedance amplifier, and read-out device incorporating the same | |
| CN115765649A (en) | Current amplifying circuit, driving method thereof, ambient light detection circuit and display panel | |
| JP6513378B2 (en) | Radiation detector | |
| TWI693541B (en) | Circuit for fingerprint sensing and electronic device comprising the circuit | |
| KR102235280B1 (en) | High voltage detecting circuit | |
| US10222344B2 (en) | Gas sensor | |
| US8810262B2 (en) | Integrated low-noise sensing circuit with efficient bias stabilization |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210402 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |