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CN108152695A - A kind of DC current gain Online Transaction Processing based on voltage compensation - Google Patents

A kind of DC current gain Online Transaction Processing based on voltage compensation Download PDF

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Publication number
CN108152695A
CN108152695A CN201711331137.5A CN201711331137A CN108152695A CN 108152695 A CN108152695 A CN 108152695A CN 201711331137 A CN201711331137 A CN 201711331137A CN 108152695 A CN108152695 A CN 108152695A
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China
Prior art keywords
transistor
voltage
test
current
irradiation
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CN201711331137.5A
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Chinese (zh)
Inventor
鲁艺
荣茹
李俊杰
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Institute of Nuclear Physics and Chemistry China Academy of Engineering Physics
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Institute of Nuclear Physics and Chemistry China Academy of Engineering Physics
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Priority to CN201711331137.5A priority Critical patent/CN108152695A/en
Publication of CN108152695A publication Critical patent/CN108152695A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2608Circuits therefor for testing bipolar transistors
    • G01R31/2614Circuits therefor for testing bipolar transistors for measuring gain factor thereof

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Radiation (AREA)

Abstract

The invention discloses a kind of DC current gain Online Transaction Processing based on voltage compensation, system architecture includes:Test circuit, calculates center at data acquisition circuit;The test circuit is connect with data acquisition circuit, and collected initial data is passed through the processing at calculating center by data acquisition circuit, is stored data in file and real-time display on a user interface;The test system structure includes:Test circuit, industrial personal computer, interconnecting device, voltage compensator, arbitrary waveform generator, high-precision programmable power supply and shielded cable;The advantage of the invention is that:With higher measurement accuracy and reliability, the neutron fluence rate enhancement effect research for transistor device provides important means of testing.

Description

A kind of DC current gain Online Transaction Processing based on voltage compensation
Technical field
The present invention relates to the low neutron fluence rate experimental technique fields in radiomimesis source, more particularly to a kind of to be based on voltage compensation DC current gain Online Transaction Processing.
Background technology
In the low neutron fluence rate Test Research in radiomimesis source, in order to obtain different-energy neutron to electronics material The performance change of electronics material and component under radiation injury difference and difference neutron fluence rate that material and component generate Rule, it is essential to establish radiation and cause the on-line monitoring technique of material or device performance variation and Efficient Characterization means.
Domestic and international numerous studies show that bipolar transistor can show apparent low gamma dose rate under low dose rate irradiation Radiation injury enhancement effect (ELDRS), and dosage rate is lower, damage is more serious.But in low-dose rate irradiation environment even pole Under low-dose rate irradiation environment, whether transistor device equally exists low neutron fluence rate radiation intensification effect, yet there are no Relevant report, it is interior to be also still not clear in micromechanism of damage.In order to which the low neutron fluence rate radiation environment of accurate evaluation is to transistors The performance of part influences, and obtains radiation injury effect and damage threshold of the device under different neutron fluence rates, needs to develop suitable For the transistor device effect parameter Online Transaction Processing of different neutron fluence rates level, ground for low dose radiation enhancement effect Study carefully and important means of testing is provided.
Invention content
The present invention in view of the drawbacks of the prior art, provides a kind of DC current gain on-line testing system based on voltage compensation System, can effectively solve the problem that the above-mentioned problems of the prior art.
In order to realize more than goal of the invention, the technical solution that the present invention takes is as follows:
A kind of DC current gain Online Transaction Processing based on voltage compensation, system architecture include:Test circuit, data are adopted Collector calculates center;The test circuit is connect with data acquisition circuit, and data acquisition circuit is by collected initial data By calculating the processing at center, store data in file and real-time display on a user interface;
The test system structure includes:Test circuit, industrial personal computer, interconnecting device, voltage compensator, random waveform occur Device, high-precision programmable power supply and shielded cable;
The industrial personal computer includes:Computer display terminal, data collection and analysis software and multichannel data acquisition system;
The test circuit includes resistance, test point, transistor, external high-precision programmable power supply and random waveform Generator is connect respectively with the corresponding interface of voltage compensator, and passes through voltage compensator to the transistor in test circuit Apply suitable collector operating voltage and base bias voltage, corresponding collector current and base are converted voltages by resistance Electrode current;
The data collection and analysis software is for the DC current gain information during remotely acquisition transistor exposure;
The multichannel data acquisition system provides control signal for hardware device, completes to transistor operating point electricity The real-time acquisition of pressure calculates the data of acquisition by the completion of data collection and analysis software, is handled, is stored, display function;
Described voltage compensator one end is connect by signal cable with the transistor in test circuit, and the other end then leads to It crosses shielded cable with the interconnecting device between measuring to be connected, by transistor collector operating voltage VCC, base stage input offset voltage VBB, test point VRBAnd VRCFeed back to multichannel data acquisition system;Multichannel data acquisition system and high-precision programmable power supply Between be connected using communication modes, by the acquisition of high-precision programmable supply voltage, retaking of a year or grade, control and feedback, adjusting Outer power voltage, to realize the compensation to voltage loss caused by long-line transmission.
The computer display terminal is responsible for the condition monitoring of transistor device and related man-machine interface in test circuit, complete Preserved into parameter configuration, Real time displaying, data etc., there is good human-computer interaction function.
Further, the test circuit is applied using external power supply and arbitrarily signal generating device to transistor respectively Suitable collector operating voltage VCCWith base voltage VBB, and convert voltages into corresponding collector current ICAnd base current Ib, the DC current gain of transistor is can be obtained by using formula 1:
During neutron irradiation transistor, under low current injection condition, neutron irradiation influences the DC current gain of transistor aobvious It writes, DC current gain is represented with the variation formula 2 of irradiation neutron fluence at this time:
Δ(1/hFE)=1/hFE(φ)-1/hFE(0)=K ' t φ=K φ (2)
In formula, Δ (1/hFE) variable quantity for transistor DC gain inverse before and after neutron irradiation, hFE(φ) is neutron spoke According to rear transistor DC gain, hFE(0) it is transistor DC gain before neutron irradiation, K ' is silicon materials damage constant cm2·s-1, Base-transit time s when t is electric current infinity, K test gain damage constant cm for transistor2, φ is irradiation neutron fluence cm-2
With reference to formula 1 and 2, operating voltage V is obtained in real timeCC, base voltage VBB, test point VRBAnd VRC, obtain neutron irradiation Period transistor DC gain with neutron fluence variation tendency.
Further, directly hydraulic performance decline is brought to introduce measurement error by neutron irradiation to exclude resistance, by test electricity The resistance of road and transistor separate, and are positioned in voltage compensator.
Further, at work, the stabilization of operating voltage is to improve an important ring of measuring accuracy to transistor Section, therefore high-precision power is selected to provide operating voltage for transistor;Meanwhile the direct current of transistor increases in irradiation process Benefit will constantly change with the variation of irradiation fluence, with selected collector current I in testCFor limit value, and base current IB In order to meet ICTest condition should provide a sawtooth wave for the base stage of transistor by arbitrarily signal generating device and input arteries and veins Punching, and signal amplitude and frequency must satisfy test request.
Further, retaking of a year or grade voltage is compared with output voltage using communication modes between power supply and industrial personal computer, and Control high-precision programmable power supply automatically adjusts to voltage.
Further, the industrial personal computer also installs embedded Control driver, and control signal is provided for other hardware, utilizes Hardware resource carries out parameter configuration and channel selecting, electricity of the control multichannel collecting system acquisition transistor during irradiation Parameter controls the voltage retaking of a year or grade and automatic adjustment of high-precision programmable power supply, realizes data transmission, control command interaction.
Compared with prior art the advantage of the invention is that:It is solved in long-range monitoring because of crystal using voltage compensating method Measurement error caused by pipe work voltage loss, and pass through modular software architecture and voltage retaking of a year or grade technology, establish crystal Pipe DC current gain Online Transaction Processing realizes the real-time monitoring of the different lower transistor DC gains of neutron fluence rate irradiation, obtains Device sensitive parameter was that the evaluation of radiation intensification effect result carries with the changing rule of different neutron fluence rates during obtaining irradiation Foundation is supplied.The DC current gain on-line measurement system of development can meet the measurement request of different neutron fluence rate ranges, have compared with High measurement accuracy and reliability, the neutron fluence rate enhancement effect research for transistor device provide important test hand Section.
Description of the drawings
Fig. 1 is system architecture diagram of the embodiment of the present invention;
Fig. 2 is system structure diagram of the embodiment of the present invention;
Fig. 3 is test circuit figure of the embodiment of the present invention;
Fig. 4 tests system flow chart for the embodiment of the present invention;
Fig. 5 tests system squadron for the embodiment of the present invention and lists intention;
Fig. 6 is stability test result schematic diagram of the embodiment of the present invention;
Fig. 7 is CFBR-II heap 2W irradiation test test result schematic diagrames of the embodiment of the present invention;
Fig. 8 is CFBR-II heap 20W irradiation test test result schematic diagrames of the embodiment of the present invention;
Fig. 9 is CFBR-II heap 200W irradiation test test result schematic diagrames of the embodiment of the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention more comprehensible, develop simultaneously embodiment referring to the drawings, right The present invention is described in further details.
As shown in Figure 1, a kind of DC current gain Online Transaction Processing based on voltage compensation, system architecture include:Test Circuit, calculates center at data acquisition circuit;The test circuit is connect with data acquisition circuit, and data acquisition circuit will acquire The initial data arrived passes through the processing at calculating center, stores data in file and real-time display on a user interface;
As shown in Fig. 2, the test system structure includes:It is test circuit, industrial personal computer, interconnecting device, voltage compensator, arbitrary Waveform generator, high-precision programmable power supply and shielded cable;
The industrial personal computer includes:Computer display terminal, data collection and analysis software and multichannel data acquisition system;
The test circuit includes resistance, test point, transistor, external high-precision programmable power supply and random waveform Generator is connect respectively with the corresponding interface of voltage compensator, and passes through voltage compensator to the transistor in test circuit Apply suitable collector operating voltage and base bias voltage, corresponding collector current and base are converted voltages by resistance Electrode current;
The data collection and analysis software is for the DC current gain information during remotely acquisition transistor exposure;
The multichannel data acquisition system provides control signal for hardware device, completes to transistor operating point electricity The real-time acquisition of pressure calculates the data of acquisition by the completion of data collection and analysis software, is handled, is stored, display function;
Described voltage compensator one end is connect by signal cable with the transistor in test circuit, and the other end then leads to It crosses shielded cable with the interconnecting device between measuring to be connected, by transistor collector operating voltage VCC, base stage input offset voltage VBB, test point VRBAnd VRCFeed back to multichannel data acquisition system;Multichannel data acquisition system and high-precision programmable power supply Between be connected using communication modes, by the acquisition of high-precision programmable supply voltage, retaking of a year or grade, control and feedback, adjusting Outer power voltage, to realize the compensation to voltage loss caused by long-line transmission.
The computer display terminal is responsible for the condition monitoring of transistor device and related man-machine interface in test circuit, complete Preserved into parameter configuration, Real time displaying, data etc., there is good human-computer interaction function.
As shown in figure 3, the test circuit passes through electricity using external high-precision programmable power supply and arbitrarily signal generating device Compensator is pressed to apply suitable collector operating voltage V to transistor indirectlyCC, base voltage VBB, and convert the voltage into For corresponding collector current ICWith base current Ib, the DC current gain of transistor is can be obtained by using formula 1:
During neutron irradiation transistor, under low current injection condition, neutron irradiation influences the DC current gain of transistor aobvious It writes, DC current gain is represented with the variation formula 2 of irradiation neutron fluence at this time:
Δ(1/hFE)=1/hFE(φ)-1/hFE(0)=K ' t φ=K φ (2)
In formula, Δ (1/hFE) variable quantity for transistor DC gain inverse before and after neutron irradiation, hFE(φ) is neutron spoke According to rear transistor DC gain, hFE(0) it is transistor DC gain before neutron irradiation, K ' is silicon materials damage constant cm2·s-1, Base-transit time s when t is electric current infinity, K test gain damage constant cm for transistor2, φ is irradiation neutron fluence cm-2
With reference to formula 1 and 2, operating voltage V is obtained in real timeCC, base voltage VBB, test point VRBAnd VRC, obtain neutron irradiation Period transistor DC gain with neutron fluence variation tendency.
Directly hydraulic performance decline is brought to introduce measurement error by neutron irradiation to exclude resistance, by the resistance in test circuit It separates, is positioned in voltage compensator with transistor.
At work, the stabilization of operating voltage is to improve an important link of measuring accuracy, therefore select to transistor With high-precision power operating voltage is provided for transistor;Meanwhile the DC current gain of transistor will be with spoke in irradiation process Constantly change according to the variation of fluence, with selected collector current I in testCFor limit value, and base current IBIn order to meet ICTest condition should provide a sawtooth wave input pulse, and signal by arbitrarily signal generating device for the base stage of transistor Amplitude and frequency must satisfy test request,
Retaking of a year or grade voltage with output voltage is compared using communication modes between power supply and industrial personal computer, and controls high-precision Programmable power supply automatically adjusts to voltage.
The industrial personal computer also installs embedded Control driver, provides control signal for other hardware, utilizes hardware resource Carry out parameter configuration and channel selecting, electrical parameter of the control multichannel collecting system acquisition transistor during irradiation, control Data transmission, control command interaction are realized in the voltage retaking of a year or grade and automatic adjustment of high-precision programmable power supply processed.
Testing system software is deposited using LabVIEW as development platform including data acquisition module, data processing module, data Storage and display module, test module flow chart are as shown in Figure 4.
Using queue (Queue) technology in LabVIEW, using data acquisition module as a task alone, at data Reason module, storage and display module are individually placed in respective task, allow them to run parallel.Each intermodule is with more Business form is attached, and realizes the test system function of acquisition and real-time response user's operation in real time.
As shown in figure 5, the queue technology framework used in test system, three parallel task systems are mainly by three cycles Frame and queue technology are formed.First main data acquisition task of cycle, and collected data are sent into queue;The Two cycles complete data processing task, and data are taken out from queue and then carry out algorithm process, then processed data are sent Enqueue;The main storage and display for completing data of the last one cycle is taken out in processing data deposit text, together from queue When drawing data in the graph.In addition, human-computer interaction is also placed in third cycle, with the switching between reduction task, Reduce the response time.
The measuring stability verification of DC current gain Online Transaction Processing:
After DC current gain Online Transaction Processing is established, the verification examination of stability is tested to it first, test is adopted It is carried out with the method for testing in lab (no irradiation), by the NPN pipes BCX41 and PNP pipe 3CK3B each 5 by strictly screening Test object is only used as, is connected in system by long line, system energization after five minutes, starts and measures, and one was measured at interval of 10 seconds The DC current gain β of secondary transistori.Stability result is calculated according to formula 3, is qualification as w≤1%.
In formula,Average value for all previous measured result.
System stability test result is as shown in Figure 6.Test data is substituted into formula (3), obtains system stability result w It is 0.2%, this result proves that the test system developed has high stability, meets application requirement.
The application of DC current gain Online Transaction Processing:
Using the transistor DC gain Online Transaction Processing of development, using two kinds of transistor devices of BCX41 and 3CK3B as Test specimen has carried out different neutron fluence rate effect tests on CFBR-II heaps, obtains 2W, 20W, 200W irradiation respectively The DC current gain variation tendency of transistor under power, as a result as shown in Fig. 7, Fig. 8, Fig. 9.
The result shows that the DC current gain Online Transaction Processing of development has high stability, and spoke can be followed in real time According to the variation of neutron fluence, the online DC current gain change curve for obtaining irradiation transistor.
Using silicon displacement damage characteristic of the transistor under neutron irradiation, successfully have developed transistor DC gain and exist Line tests system.The system, by the modeled programming of multi-task parallel processing, is realized using Labview as development platform Quick response, high efficiency synchronous acquisition, real time data processing, storage and display;Voltage compensation is established using retaking of a year or grade technology Method solves the measurement error brought in long-range monitoring by voltage loss, measuring accuracy is made to be up to 0.2%.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this hair Bright implementation, it should be understood that protection scope of the present invention is not limited to such specific embodiments and embodiments.Ability The those of ordinary skill in domain can be made according to these technical inspirations disclosed by the invention it is various do not depart from essence of the invention its Its various specific deformation and combination, these deformations and combination are still within the scope of the present invention.

Claims (6)

1. a kind of DC current gain Online Transaction Processing based on voltage compensation, it is characterised in that system architecture includes:Test circuit, Data acquisition circuit calculates center;The test circuit is connect with data acquisition circuit, and data acquisition circuit is by collected original Beginning data pass through the processing at calculating center, store data in file and real-time display on a user interface;
The test system structure includes:Test circuit, industrial personal computer, interconnecting device, voltage compensator, arbitrary waveform generator, height Precision programmable power supply and shielded cable;
The industrial personal computer includes:Computer display terminal, data collection and analysis software and multichannel data acquisition system;
The test circuit includes resistance, test point, transistor, and external high-precision programmable power supply and random waveform occur Device is connect respectively with the corresponding interface of voltage compensator, and is passed through voltage compensator and applied to the transistor in test circuit Suitable collector operating voltage and base bias voltage convert voltages into corresponding collector current and base stage electricity by resistance Stream;
The data collection and analysis software is for the DC current gain information during remotely acquisition transistor exposure;
The multichannel data acquisition system provides control signal for hardware device, completes to transistor quiescent potential Acquisition in real time calculates the data of acquisition by the completion of data collection and analysis software, is handled, is stored, display function;
Described voltage compensator one end is connect by signal cable with the transistor in test circuit, and the other end then passes through screen It covers cable with the interconnecting device between measuring to be connected, by transistor collector operating voltage VCC, base stage input offset voltage VBB、 Test point VRBAnd VRCFeed back to multichannel data acquisition system;Multichannel data acquisition system and high-precision programmable power supply it Between be connected using communication modes, it is outer by the acquisition of high-precision programmable supply voltage, retaking of a year or grade, control and feedback, adjusting Portion's supply voltage, to realize to long line
The compensation of voltage loss caused by transmission;
The computer display terminal is responsible for the condition monitoring of transistor device and related man-machine interface in test circuit, completes ginseng Number configuration, Real time displaying, data preservation etc., have good human-computer interaction function.
2. a kind of DC current gain Online Transaction Processing based on voltage compensation according to claim 1, it is characterised in that:Institute It states test circuit and applies suitable collector work electricity to transistor respectively using external power supply and arbitrarily signal generating device Press VCCWith base voltage VBB, and convert voltages into corresponding collector current ICWith base current Ib, utilize formula 1 Obtain the DC current gain of transistor:
During neutron irradiation transistor, under low current injection condition, neutron irradiation influences significantly the DC current gain of transistor, this When DC current gain with irradiation neutron fluence variation formula 2 represent:
Δ(1/hFE)=1/hFE(φ)-1/hFE(0)=K ' t φ=K φ (2)
In formula, Δ (1/hFE) variable quantity for transistor DC gain inverse before and after neutron irradiation, hFE(φ) is after neutron irradiation Transistor DC gain, hFE(0) it is transistor DC gain before neutron irradiation, K ' is silicon materials damage constant cm2·s-1, t is Base-transit time s during electric current infinity, K test gain damage constant cm for transistor2, φ is irradiation neutron fluence cm-2
With reference to formula 1 and 2, operating voltage V is obtained in real timeCC, base voltage VBB, test point VRBAnd VRC, during obtaining neutron irradiation Transistor DC gain with neutron fluence variation tendency.
3. a kind of DC current gain Online Transaction Processing based on voltage compensation according to claim 2, it is characterised in that:For It excludes resistance directly to be brought hydraulic performance decline by neutron irradiation and introduce measurement error, by the resistance in test circuit and three pole of crystal Pipe separates, and is positioned in voltage compensator.
4. a kind of DC current gain Online Transaction Processing based on voltage compensation according to claim 3, it is characterised in that:It is brilliant At work, the stabilization of operating voltage is to improve an important link of measuring accuracy, therefore select high precision electro to body triode Source provides operating voltage for transistor;Meanwhile the DC current gain of transistor will be with the change of irradiation fluence in irradiation process Change and constantly change, with selected collector current I in testCFor limit value, and base current IBIn order to meet ICTest-strips Part should provide a sawtooth wave input pulse, and signal amplitude and frequency by arbitrarily signal generating device for the base stage of transistor Rate must satisfy test request.
5. a kind of DC current gain Online Transaction Processing based on voltage compensation according to claim 4, it is characterised in that:Electricity Retaking of a year or grade voltage is compared with output voltage, and control high-precision programmable power supply using communication modes between source and industrial personal computer It automatically adjusts to voltage.
6. a kind of DC current gain Online Transaction Processing based on voltage compensation according to claim 5, it is characterised in that:Institute It states industrial personal computer and embedded Control driver is also installed, control signal is provided for other hardware, carrying out parameter using hardware resource matches It puts and channel selecting, electrical parameter of the control multichannel collecting system acquisition transistor during irradiation controls high-precision can The voltage retaking of a year or grade and automatic adjustment of power supply are programmed, realizes data transmission, control command interaction.
CN201711331137.5A 2017-12-13 2017-12-13 A kind of DC current gain Online Transaction Processing based on voltage compensation Pending CN108152695A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109061714A (en) * 2018-07-24 2018-12-21 中国原子能科学研究院 The method for measuring cold neutron source gain
CN109490946A (en) * 2018-11-19 2019-03-19 西北核技术研究所 The method for carrying out the equivalent neutron fluence measurement of spallation neutron target 1MeV based on grid-control technology
CN109541670A (en) * 2018-11-19 2019-03-29 西北核技术研究所 The measurement method of the equivalent neutron fluence of spallation neutron target 1MeV

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
鲁艺等: "基于电压补偿的直流增益在线测试系", 《中国核科学技术进展报告(第五卷) 辐射物理分卷》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109061714A (en) * 2018-07-24 2018-12-21 中国原子能科学研究院 The method for measuring cold neutron source gain
CN109490946A (en) * 2018-11-19 2019-03-19 西北核技术研究所 The method for carrying out the equivalent neutron fluence measurement of spallation neutron target 1MeV based on grid-control technology
CN109541670A (en) * 2018-11-19 2019-03-29 西北核技术研究所 The measurement method of the equivalent neutron fluence of spallation neutron target 1MeV
CN109541670B (en) * 2018-11-19 2019-09-27 西北核技术研究所 Measurement method of 1MeV equivalent neutron fluence in spallation neutron source
CN109490946B (en) * 2018-11-19 2019-09-27 西北核技术研究所 Measurement Method of 1 MeV Equivalent Neutron Flux of Spallation Neutron Source Based on Gate Control Technology

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