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CN108149190A - Mask plate and preparation method thereof - Google Patents

Mask plate and preparation method thereof Download PDF

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Publication number
CN108149190A
CN108149190A CN201711275668.7A CN201711275668A CN108149190A CN 108149190 A CN108149190 A CN 108149190A CN 201711275668 A CN201711275668 A CN 201711275668A CN 108149190 A CN108149190 A CN 108149190A
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CN
China
Prior art keywords
raw material
mask
board raw
mask board
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201711275668.7A
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Chinese (zh)
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CN108149190B (en
Inventor
龚建国
王衣可
杨颖�
冉应刚
吴俊雄
柯贤军
苏君海
李建华
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Truly Huizhou Smart Display Ltd
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Truly Huizhou Smart Display Ltd
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Priority to CN201711275668.7A priority Critical patent/CN108149190B/en
Publication of CN108149190A publication Critical patent/CN108149190A/en
Application granted granted Critical
Publication of CN108149190B publication Critical patent/CN108149190B/en
Active legal-status Critical Current
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention relates to a kind of mask plate and preparation method thereof, the method includes:Mask board raw material is provided;To performing etching on one side for the mask board raw material, so that the thickness of the mask board raw material reduces;To the mask board raw material etch after carry out on one side polish processing;The mask board raw material after polishing is performed etching, pixel openings are etched on the mask board raw material, forms the mask plate with the pixel openings.First pass around etching, so that the thickness of mask board raw material reduces, and then mask plate is carried out after polishing processing, the mask board raw material is enabled to etch the smaller mask plate of pixel openings spacing, so as to improve the PPI of the vapor deposition of mask plate, and mask plate is effectively avoided to be cut through so that the structure of mask plate is more firm, so that the tension performance of mask plate is more preferably, and effectively increase the service life of mask plate.

Description

Mask plate and preparation method thereof
Technical field
The present invention relates to organic light emitting display manufacturing technology field, more particularly to mask plate and preparation method thereof.
Background technology
AMOLED (Active-matrix organic light emitting diode, active matrix organic light-emitting two Polar body) yield is most influenced in procedure for producing is vapor deposition processing procedure, the basic process of processing procedure is deposited i.e. by heating organic material, So that organic material evaporation, and pass through the through-hole that high-precision fine mask plate and preparation method thereof etching is completed and be deposited to glass base On plate, luminescence unit is formed.
PPI (pixels per inch, per inch number of pixels) is the unit of image resolution ratio, and expression is per inch Pixel (pixel) number possessed.Therefore PPI numerical value is higher, that is, image can be shown with higher density by representing display screen. Certainly, the density of display is higher, and degree of verisimilitude is higher.High PPI display screens are industry development trend from now on.
In order to produce the display screen of high PPI, need to carry out the preparation to pixel using high-precision fine mask plate.It is high at present The main manufacture craft of the fine mask plate of precision is two sides etching.The thickness of existing high-precision fine mask plate at 30 μm or more, When making high PPI (PPI is more than 400) fine mask plate of high-precision, need to etch more pattern openings on mask plate, scheme More intensive, the distance between pattern openings smaller of case opening, if utilizing existing high-precision fine mask plate, it will lead to height The vapor deposition face of the fine mask plate of precision is cut through so that adjacent pixel openings are by through so as to influence the fine mask plate of high-precision Tension performance and follow-up service life.
Invention content
Based on this, it is necessary to provide a kind of mask plate and preparation method thereof.
A kind of production method of mask plate, including:
Mask board raw material is provided;
To performing etching on one side for the mask board raw material, so that the thickness of the mask board raw material reduces;
To the mask board raw material etch after carry out on one side polish processing;
The mask board raw material after polishing is performed etching, pixel openings, shape are etched on the mask board raw material Into the mask plate with the pixel openings.
In one of the embodiments, described pair polish after mask board raw material the step of performing etching include:
Liquid etching is performed etching to the mask board raw material after polishing.
The performing etching on one side to the mask board raw material in one of the embodiments, so that the mask The step of thickness of board raw material reduces includes:
Laser ablation is carried out to the one side of the mask board raw material, so that the thickness of the mask board raw material reduces.
The performing etching on one side to the mask board raw material in one of the embodiments, so that the mask The step of thickness of board raw material reduces includes:
Liquid etching is performed etching on one side to the mask board raw material, so that the thickness of the mask board raw material reduces.
The performing etching in step on one side to the mask board raw material in one of the embodiments, the mask The thickness that board raw material etches away is 1 with the ratio of thickness not being etched away:(1~2).
The performing etching in step on one side to the mask board raw material in one of the embodiments, the mask The thickness that board raw material etches away is 1 with the ratio of thickness not being etched away:1.
In one of the embodiments, it is described to the mask board raw material etch after the step of carrying out polishing processing on one side In, based on the minimum thickness of the mask board raw material after etching, polishing on one side after being etched to the mask board raw material Processing.
In one of the embodiments, it is described to the mask board raw material etch after the step of carrying out polishing processing on one side In, using dry sanding paper to the mask board raw material etch after carry out on one side polish processing.
In one of the embodiments, it is described to the mask board raw material etch after the step of carrying out polishing processing on one side In, using drill bit to the mask board raw material etch after carry out on one side polish processing.
A kind of mask plate, the mask plate made of the mask board manufacturing method described in any of the above-described embodiment and Into.
Above-mentioned mask plate and preparation method thereof first passes around etching so that the thickness of mask board raw material reduces, and then will cover Diaphragm plate is carried out after polishing processing so that the mask board raw material can etch the smaller mask plate of pixel openings spacing, so as to carry The high PPI of the vapor deposition of mask plate, and mask plate is effectively avoided to be cut through so that the structure of mask plate is more firm so that The tension performance of mask plate more preferably, and effectively increases the service life of mask plate.
Description of the drawings
Fig. 1 is the flow diagram of the production method of the mask plate of one embodiment;
Fig. 2A is the cross-sectional view of the mask board raw material of one embodiment;
Fig. 2 B are a direction structure schematic diagram of the mask board raw material of one embodiment;
Fig. 2 C are the cross-sectional view of mask board raw material that the process of one embodiment etches partially;
Fig. 2 D are the direction structure schematic diagram of mask board raw material that the process of one embodiment etches partially;
Fig. 2 E are the cross-sectional view that the process of one embodiment polishes the mask board raw material of processing;
Fig. 2 F are the direction structure schematic diagram that the process of one embodiment polishes the mask board raw material of processing;
Fig. 2 G are the cross-sectional view of the mask plate for etching pixel openings of one embodiment;
Fig. 2 H are a direction structure schematic diagram of the mask plate for etching pixel openings of one embodiment;
Fig. 3 is the part section structural representation of the mask plate of one embodiment.
Specific embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In attached drawing Give the better embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to herein Described embodiment.On the contrary, the purpose of providing these embodiments is that make to understand more the disclosure Add thorough and comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention The normally understood meaning of technical staff is identical.Term used herein is intended merely to the mesh of description specific embodiment , it is not intended that in the limitation present invention.Term as used herein " and/or " including one or more relevant Listed Items Arbitrary and all combination.
For example, a kind of production method of mask plate, including:Mask board raw material is provided;To the one side of the mask board raw material It performs etching, so that the thickness of the mask board raw material reduces;Polishing on one side after being etched to the mask board raw material Processing;The mask board raw material after polishing is performed etching, pixel openings are etched on the mask board raw material, forms tool There is the mask plate of the pixel openings.
In above-described embodiment, etching is first passed around so that the thickness of mask board raw material reduces, and then mask plate is ground After flat processing so that the mask board raw material can etch the smaller mask plate of pixel openings spacing, so as to improve mask plate Vapor deposition PPI, and mask plate is effectively avoided to be cut through so that the structure of mask plate is more firm so that of mask plate It draws performance more preferably, and effectively increases the service life of mask plate.
In one embodiment, as shown in Figure 1, providing a kind of mask plate and preparation method thereof, including:
Step 110, mask board raw material is provided.
For example, as shown in Figure 2 A and 2B, provide mask board raw material 210 not through processing.
Specifically, which is the mask board raw material without etching processing, which is without adding The mask board raw material of work in other words, pixel openings is not opened up on the mask board raw material.
For example, the mask board raw material that thickness is more than 30 μm is provided, for example, providing thickness is more than 30 μm, and less than 50 μm Mask board raw material.
Step 130, performing etching on one side to the mask board raw material, so that the thickness of the mask board raw material subtracts It is small.
For example, as illustrated in figs. 2 c and 2d, to performing etching on one side for the mask board raw material 210, so that the mask The thickness of board raw material 210 reduces.
For example, the first face of the mask board raw material is performed etching, so that the thickness of the mask board raw material reduces, In order to be distinguished with subsequent etch step, etching of the etching for thickness reduction in this step, for example, to the mask board raw material The first face carry out thickness reduction etching so that the mask board raw material thickness reduce.
For example, etching partially on one side to the mask board raw material, so that the thickness of the mask board raw material reduces, In this step, the etching reduced for thickness is etched, also cries and etches partially, this is etched partially carries out entirety to the first face of mask board raw material Etching, and mask board raw material is not cut through, that is, do not etch opening.Etching partially in this implementation is referred to mask plate The entirety of the one side of raw material performs etching so that the thickness of the mask plate be decreased to the half before not etching to three/ Two, for example, etching partially on one side to the mask board raw material so that the thickness of the mask board raw material be decreased to not into The half gone before etching partially.
In this step, being etched partially by the first face to mask board raw material so that the thickness of mask board raw material reduces, In such manner, it is possible to so that subsequently when etching pixel openings, the higher pixel openings of density can be etched.
Step 150, to the mask board raw material etch after carry out on one side polish processing.
For example, the first face after being etched to the mask board raw material carries out polishing processing.For example, as illustrated in figures 2 e and 2f, To the mask board raw material polishing on one side after etching so that being polishing on one side for mask board raw material is smooth.It is worth One is mentioned that, mask plate raw material surface entirely reduce thickness, the mask plate after etching partially cannot be caused by etching partially technique The thickness of raw material reduces, but the first face of the mask board raw material is there are uneven or burr, in order to enable the mask First face of board raw material is smooth, the protrusion in the first face of elimination mask board raw material, to the first face of mask board raw material in this step It polishes so that the first face of mask board raw material forms even curface.So that mask plate after molding is with more smooth Surface so that evaporation effect is more preferably.
Step 170, the mask board raw material after polishing is performed etching, pixel is etched on the mask board raw material Opening forms the mask plate with the pixel openings.
As shown in Fig. 2 G and 2H, the mask board raw material after polishing is performed etching, is carved on the mask board raw material It loses pixel openings 201, forms the mask plate 200 with the pixel openings 201.
Specifically, the etching in this step is full etching, which etches pixel openings, this step by mask board raw material Etching in rapid is to cut through mask board raw material in aperture position to form pixel openings.The pixel openings run through mask board raw material The first face and the second face, second face be the one side opposite with the first face.For example, to the mask board raw material after polishing into Row full etching etches pixel openings on the mask board raw material, forms the mask plate with the pixel openings. After carrying out full etching, the mask plate with multiple pixel openings is formed.The pixel openings are used for through evaporation material, evaporation material It is vaporized on substrate by pixel openings, so as to form pattern of pixels.
It is noted that mask board raw material when carrying out full etching, can cause the side wall of pixel openings to form inclination angle, it should Inclination angle is etching angle.In the present embodiment, since the thickness of mask board raw material reduces, and then reduce the outside inclination of pixel openings Width, and then avoid adjacent two pixel openings connection, colour mixture when avoiding pixel openings vapor deposition so that evaporation effect is more It is good, in this way so that the distance of the pixel openings on the mask plate of formation can realize it is more intensive, in this way, being conducive to etching During pixel openings, the distance between pixel openings can be reduced so that more pixel openings can be etched on mask plate, The density of the pixel openings of mask plate is exactly improved, so that the higher pixels of PPI can be deposited out by the mask plate Pattern..
Specifically, as shown in figure 3, H is the thickness of mask board raw material 310 in figure, θ is the etching angle of pixel openings 301, L is the outside inclination width of pixel openings 301, and the etching angle is related to the thickness of mask board raw material 310, and with two pictures The distance dependent of entity part between element opening, specifically, θ=arctan (H/L) in general, are less than or equal to 60 ° in θ, Specifically, 40 °≤θ≤60 °, in the case where etching angle θ is certain, H and L are proportionate functional relation, that is to say, that mask The thickness H of board raw material 310 is bigger, then the outside inclination width L of pixel openings 301 is bigger, in the thickness H of mask board raw material 310 When larger, in this way, two adjacent pixel openings 301 are then easily formed since the outside inclination width L of pixel openings is too big Connection, causes to connect between pixel openings 301 so that vapor deposition generates colour mixture, in addition, will also influence mask plate tension performance, makes Mask plate tension performance is obtained to decline, and influence the service life of mask plate.In the present embodiment, since mask board raw material 310 passes through It crosses and etches partially and polish processing so that the thickness of mask board raw material 310 reduces, and the thickness H of mask board raw material 310 is smaller, then The outside inclination width L of pixel openings 301 is smaller, and then effectively avoids connecting, and then can between adjacent pixel openings 301 Realize the etching of the pixel openings 301 of higher density, it is achieved thereby that the vapor deposition of high PPI, and effectively avoid colour mixture so that The evaporation effect of mask plate is more preferably.
In order to enable the pixel openings of etching is better, in one embodiment, described pair polish after described cover The step of diaphragm plate raw material performs etching includes:Liquid etching is performed etching to the mask board raw material after polishing.
For example, full etching is carried out to the mask board raw material after polishing by etching liquid, for example, being etched using etching liquid Method carries out full etching to the mask board raw material after polishing, and pixel openings are etched on the mask board raw material, forms tool There is the mask plate of the pixel openings.It is noted that etching pixel openings to mask board raw material can be used laser Etching or etching liquid etching since laser ablation will cause the edge of pixel openings to generate fold, use in the present embodiment Etching liquid carries out full etching to mask board raw material, the edge of pixel openings can effectively be avoided to generate fold so that etching effect More preferably.
In one embodiment, the performing etching on one side to the mask board raw material, so that the mask plate is former The step of thickness of material reduces includes:Laser ablation is carried out to the one side of the mask board raw material, so that the mask plate is former The thickness of material reduces.Specifically, in the present embodiment, by laser etching partially on one side to the mask board raw material, for example, Using laser ablation method etching partially on one side to mask board raw material, so that the thickness of the mask board raw material reduces.
In one embodiment, the performing etching on one side to the mask board raw material, so that the mask plate is former The step of thickness of material reduces includes:Liquid etching is performed etching on one side to the mask board raw material, so that the mask plate The thickness of raw material reduces.In the present embodiment, by etching liquid etching partially on one side to mask board raw material, for example, using carving Liquid etching method is lost to etching partially on one side to mask board raw material, so that the thickness of the mask board raw material reduces.
It should be understood that mask board raw material is in etching partially, if the thickness etched away is too big so that the thickness of reservation It is smaller, the intensity for causing mask plate is relatively low, it is unfavorable for the tensioning of mask plate, if the thickness etched away is too small, and retain Thickness is larger, then is unfavorable for etching the higher pixel openings of density in follow-up full etching, in order to enable mask plate have compared with Good intensity, and the higher pixel openings of density can be etched without mask plate is caused to cut through, in one embodiment, The performing etching in step on one side to the mask board raw material, the thickness that the mask board raw material etches away is not with being etched The ratio of the thickness fallen is 1:(1~2).That is, the thickness that mask board raw material is etched away is the mask not etched partially / 3rd of the thickness of board raw material are to half so that the thickness of mask board raw material not being etched away of reservation for not into The half of the thickness of mask board raw material that etches partially of row is to 2/3rds.For example, the first face to the mask board raw material It performs etching, so that the thickness of the mask board raw material reduces 1/3rd to half.In this way so that mask plate has Preferable intensity is conducive to the tensioning of mask plate, and can etch the higher pixel openings of density, and height can be deposited out The pattern of pixels of PPI.
It should be understood that after due to etching partially, the uneven thickness of mask board raw material, there are uneven, in order to enable The thickness of rough mask board raw material can have preferable intensity, and can etch the higher pixel openings of density, For example, the average thickness that etches away of the mask board raw material and the ratio of average thickness not being etched away are 1:(1~2).That is, The average thickness that mask board raw material is etched away is 1st to two/3rd of the thickness of mask board raw material point not etched partially One of so that the average thickness of mask board raw material not being etched away of reservation is the thickness of mask board raw material not etched partially The half of degree is to 2/3rds.In this way, it is the average thickness not being etched away by the average thickness etched away 1/3rd, to half, can reduce error so that the thickness etched away is more accurate.
For example, the maximum gauge that etches away of the mask board raw material and the ratio of minimum thickness not being etched away are 1:(1~ 2).That is, the maximum gauge that mask board raw material is etched away be do not etched partially the three of the thickness of mask board raw material/ One to half so that the minimum thickness of mask board raw material not being etched away of reservation is the mask plate not etched partially The half of the thickness of raw material is to 2/3rds.In this way, by with the maximum gauge etched away and the minimum not being etched away On the basis of thickness, error can be effectively reduced so that the thickness etched away is more accurate.
In one embodiment, the performing etching in step on one side to the mask board raw material, the mask plate are former Expect that the thickness etched away and the ratio of thickness not being etched away are 1:1.That is, the thickness that mask board raw material etches away is does not carry out half The half of the thickness of the mask board raw material of etching so that the thickness of mask board raw material not being etched away of reservation for not into The half of the thickness of mask board raw material that row etches partially, that is to say, that in the present embodiment, in processing is etched partially, will cover The half of the thickness of diaphragm plate raw material etches away so that the thickness of the mask board raw material of reservation is the original mask not etched partially The half of the thickness of board raw material.
For example, the average thickness that etches away of the mask board raw material and the ratio of average thickness not being etched away are 1:1. That is, the average thickness that mask board raw material is etched away is the half of the thickness of mask board raw material not etched partially, make The average thickness of mask board raw material not being etched away that must retain is do not etched partially the two of the thickness of mask board raw material / mono-.In this way, being the half of average thickness not being etched away by the average thickness etched away, can reduce Error so that the thickness etched away is more accurate.
For example, the maximum gauge that etches away of the mask board raw material and the ratio of minimum thickness not being etched away are 1:1. That is, the maximum gauge that mask board raw material is etched away is the half of the thickness of mask board raw material not etched partially, make The minimum thickness of mask board raw material not being etched away that must retain is do not etched partially the two of the thickness of mask board raw material / mono-.In this way, by the basis of the maximum gauge etched away and the minimum thickness not being etched away, mistake can be effectively reduced Difference so that the thickness etched away is more accurate.
In one embodiment, it is described to the mask board raw material etch after the step of carrying out polishing processing on one side in, Based on the minimum thickness of the mask board raw material after etching, carrying out on one side after being etched to the mask board raw material polishes place Reason.
Specifically, on the basis of the minimum thickness of the mask board raw material after etching partially, the mask board raw material is carved Carrying out on one side after erosion polishes processing so that the thickness of the mask board raw material reaches the mask board raw material after etching most Small thickness.It should be understood that due in etching partially, the integral thickness of mask board raw material is to be etched to reduce, but its First face is there are uneven, therefore, when polishing in the first face to mask board raw material, by the first face of mask board raw material The part of protrusion polishes off so that the thickness of mask board raw material is uniform, and reaches the minimum thickness after etching partially so that mask Board raw material surface keeps smooth, so that the evaporation effect of mask plate after molding is more preferably.
In order to which the mask board raw material after being etched partially polishes so that it is preferable to polish effect, in one embodiment, It is described to the mask board raw material etch after the step of carrying out polishing processing on one side in, using dry sanding paper to the mask plate original Material etching after carry out on one side polish processing.Dry sanding paper rough surface is capable of providing larger frictional force, and then can effectively disappear Except the protrusion of mask board raw material so that the surfacing of mask board raw material.For example, use dry sanding paper of the mesh number for 60~150 mesh To the mask board raw material etch after carry out on one side polish processing, it is worth mentioning at this point that, the mesh number of dry sanding paper is too small, then is not easy The protrusion and burr of mask board raw material are removed, and the mesh number of dry sanding paper is too big, then mask board raw material easy to wear, therefore, this reality It applies in example, mesh number is used not only effectively to avoid abrasion mask board raw material for the dry sanding paper of 60~150 mesh, additionally it is possible to efficiently remove and cover The protrusion and burr of diaphragm plate raw material.
In one embodiment, it is described to the mask board raw material etch after the step of carrying out polishing processing on one side in, Using drill bit to the mask board raw material etch after carry out on one side polish processing.Specifically, drill bit can in high-speed rotation The protrusion of mask board raw material is effectively polished, enables to mask plate raw material surfacing.
In order to enable the thickness of mask plate is more uniformly distributed, and enables the intensity of mask plate to be more uniformly distributed distribution, for example, It is further included before the step of being performed etching to the mask board raw material after polishing:To the second face of the mask board raw material into Row etching, so that the thickness of the mask board raw material reduces, the second face after being etched to the mask board raw material polishes Processing.For example, the second face of the mask board raw material is etched partially, so that the thickness of the mask board raw material reduces, The second face after being etched to the mask board raw material carries out polishing processing.
In the present embodiment, before pixel openings are performed etching, not only to mask board raw material carry out etching partially on one side and It polishes, also the another side of mask board raw material namely the second face is etched partially and polished, so that mask board raw material Two faces are all etched so that mask board raw material is thinned on both faces so that the thickness of mask board raw material is more Uniformly, so that the mask plate in strength of etching pixel openings is more uniformly distributed, so as to improve the intensity of mask plate, into one Step improves the tension performance and service life of mask plate.
In one embodiment, a kind of mask plate is provided, the mask plate uses the mask plate in any of the above-described embodiment Production method is made.The pattern of pixels of high PPI (PPI is more than 400) can be deposited in the mask plate, covered by etching partially The thickness of diaphragm plate reduces, and mask plate is carried out to polish processing, is conducive to avoid being interconnected between adjacent pixel openings, energy It is enough effectively to avoid vapor deposition colour mixture so that the structure of mask plate is more firm so that the tension performance of mask plate more preferably, and effectively carries The high service life of mask plate.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, it is all considered to be the range of this specification record.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that those of ordinary skill in the art are come It says, without departing from the inventive concept of the premise, multiple modification and improvement can also be made, these belong to the protection of the present invention Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.

Claims (10)

1. a kind of production method of mask plate, which is characterized in that including:
Mask board raw material is provided;
To performing etching on one side for the mask board raw material, so that the thickness of the mask board raw material reduces;
To the mask board raw material etch after carry out on one side polish processing;
The mask board raw material after polishing is performed etching, pixel openings are etched on the mask board raw material, forms tool There is the mask plate of the pixel openings.
2. the production method of mask plate according to claim 1, which is characterized in that described pair polish after the mask plate The step of raw material performs etching includes:
Liquid etching is performed etching to the mask board raw material after polishing.
3. the production method of mask plate according to claim 1, which is characterized in that described to the one of the mask board raw material Face performs etching, so that the thickness of the mask board raw material includes the step of reduction:
Laser ablation is carried out to the one side of the mask board raw material, so that the thickness of the mask board raw material reduces.
4. the production method of mask plate according to claim 1, which is characterized in that described to the one of the mask board raw material Face performs etching, so that the thickness of the mask board raw material includes the step of reduction:
Liquid etching is performed etching on one side to the mask board raw material, so that the thickness of the mask board raw material reduces.
5. the production method of mask plate according to claim 1, which is characterized in that described to the one of the mask board raw material Face is performed etching in step, and the ratio of the thickness that the mask board raw material etches away and the thickness not being etched away is 1:(1~2).
6. the production method of mask plate according to claim 5, which is characterized in that described to the one of the mask board raw material Face is performed etching in step, and the ratio of the thickness that the mask board raw material etches away and the thickness not being etched away is 1:1.
7. the production method of mask plate according to claim 1, which is characterized in that described to be etched to the mask board raw material Afterwards the step of carrying out polishing processing on one side in, based on the minimum thickness of the mask board raw material after etching, to the mask Board raw material etching after carry out on one side polish processing.
8. the production method of mask plate according to claim 1, which is characterized in that described to be etched to the mask board raw material Afterwards the step of carrying out polishing processing on one side in, using dry sanding paper to the mask board raw material etch after carry out on one side polish place Reason.
9. the production method of mask plate according to claim 1, which is characterized in that described to be etched to the mask board raw material Afterwards the step of carrying out polishing processing on one side in, using drill bit to the mask board raw material etch after carry out on one side polish place Reason.
10. a kind of mask plate, which is characterized in that the mask plate is using the mask plate system described in any one of claim 1 to 9 It is made as method.
CN201711275668.7A 2017-12-06 2017-12-06 Mask plate and manufacturing method thereof Active CN108149190B (en)

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CN108796438A (en) * 2018-07-24 2018-11-13 京东方科技集团股份有限公司 A kind of preparation method of mask plate, mask plate, evaporated device
CN112768457A (en) * 2020-12-23 2021-05-07 长江存储科技有限责任公司 Method for forming three-dimensional memory structure and mask plate
EP4250383A4 (en) * 2020-11-20 2024-05-29 LG Innotek Co., Ltd. DEPOSITION MASK FOR OLED PIXEL DEPOSITION

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CN103205677A (en) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 Preparation method of trench mask plate for vapor plating
CN103668056A (en) * 2013-12-31 2014-03-26 信利半导体有限公司 Mask plate and manufacturing method thereof
CN103695842A (en) * 2013-12-31 2014-04-02 信利半导体有限公司 Mask plate and production method thereof
CN106086785A (en) * 2016-07-29 2016-11-09 京东方科技集团股份有限公司 Mask plate and preparation method thereof, mask assembly
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CN103205701A (en) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 A vapor deposition mask plate and a production method thereof
CN103205677A (en) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 Preparation method of trench mask plate for vapor plating
CN103668056A (en) * 2013-12-31 2014-03-26 信利半导体有限公司 Mask plate and manufacturing method thereof
CN103695842A (en) * 2013-12-31 2014-04-02 信利半导体有限公司 Mask plate and production method thereof
CN106381464A (en) * 2015-07-28 2017-02-08 昆山国显光电有限公司 General metal mask plate and manufacturing method thereof
CN106086785A (en) * 2016-07-29 2016-11-09 京东方科技集团股份有限公司 Mask plate and preparation method thereof, mask assembly

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108796438A (en) * 2018-07-24 2018-11-13 京东方科技集团股份有限公司 A kind of preparation method of mask plate, mask plate, evaporated device
EP4250383A4 (en) * 2020-11-20 2024-05-29 LG Innotek Co., Ltd. DEPOSITION MASK FOR OLED PIXEL DEPOSITION
CN112768457A (en) * 2020-12-23 2021-05-07 长江存储科技有限责任公司 Method for forming three-dimensional memory structure and mask plate

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