CN108109934B - Method for detecting particles on surface of metal layer - Google Patents
Method for detecting particles on surface of metal layer Download PDFInfo
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- CN108109934B CN108109934B CN201711421583.5A CN201711421583A CN108109934B CN 108109934 B CN108109934 B CN 108109934B CN 201711421583 A CN201711421583 A CN 201711421583A CN 108109934 B CN108109934 B CN 108109934B
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- 239000002245 particle Substances 0.000 title claims abstract description 109
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 95
- 239000002184 metal Substances 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000010410 layer Substances 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000001514 detection method Methods 0.000 claims abstract description 35
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 19
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000002344 surface layer Substances 0.000 claims abstract description 9
- 239000007769 metal material Substances 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 229910018503 SF6 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention relates to the field of semiconductor material preparation and detection, in particular to a method for detecting particles on the surface of a metal layer. Forming a metal layer on the surface of a substrate (the surface layer of the substrate is a non-metal layer), etching the metal layer in a direction perpendicular to the substrate by using particles on the surface of the metal layer, which are difficult to remove by a dry method, as a mask, so that the particles on the surface of the metal layer are left on the substrate, and then detecting the particles on the substrate by using an optical particle detection device, so as to obtain the information of the particles on the surface of the metal layer. Furthermore, by using the method for detecting the particles on the surface of the metal layer provided by the invention, all the particles on the surface of the metal layer are exposed on the surface of the substrate when the particles are detected, so that the obtained size information of the particles is more accurate.
Description
Technical Field
The invention relates to the field of semiconductor material preparation and detection, in particular to a method for detecting particles on the surface of a metal layer.
Background
In semiconductor processing, the cleanliness of the substrate surface is one of the important factors affecting the reliability of semiconductor devices. How to control the process environment, the cleanliness of equipment tables, substrates and the surfaces of semiconductor devices has been an important issue in the field of semiconductor technology.
Currently, optical particle inspection devices are commonly used to detect surface particle conditions in the production of semiconductor devices. An optical particle detection device for detecting the particle condition on the surface of a substrate comprises an incident light path and a detection light path, wherein the incident light path comprises a laser and a convex lens (or a spherical or aspherical reflector), the laser is used for emitting measuring light, the convex lens (or the spherical or aspherical reflector) is used for converging the measuring light, so that the measuring light is projected onto a substrate to be detected on an objective table in a grazing incidence mode, a detection light spot is formed on the surface of the substrate to be detected, and the substrate to be detected can move and rotate on the objective table, so that the detection light spot can complete the scanning of the substrate; the detection light path comprises a reflector group and a detector, the reflector group is used for reflecting scattered light formed by reflecting incident light through the substrate to be detected onto a detection surface of the detector, the detector is used for detecting the scattered light to obtain the light intensity and the spatial solid angle distribution condition of the scattered light beam, and then the particle condition of the surface of the substrate to be detected, such as the distribution and the quantity of particles, can be obtained by comparing the light intensity and the spatial solid angle distribution condition with the pattern of a standard or ideal wafer. However, it is found that the optical particle inspection apparatus is not ideal for inspecting the surface of the substrate after the deposition process of the metal layer (e.g. tungsten metal).
Disclosure of Invention
The invention aims to provide a method for detecting particles on the surface of a metal layer, which utilizes the existing optical particle detection device to acquire more accurate particle information on the surface of the metal layer.
In order to achieve the above object, the present invention provides a method for detecting particles on a surface of a metal layer, comprising:
providing a substrate, wherein the surface layer of the substrate is a non-metal material layer; forming a metal layer on the surface of the substrate, wherein the metal layer at least partially covers the non-metal material layer, the reflectivity of the metal layer is greater than that of the non-metal material layer, and a plurality of particles are formed on the metal layer; carrying out anisotropic dry etching on the substrate to remove the metal layer outside the region where the particles are; and carrying out particle detection on the substrate by adopting an optical particle detection device to obtain the information of the particles.
In the method, when the substrate is subjected to anisotropic dry etching, the included angle between the etching direction and the surface of the substrate is 85 to 95 degrees.
In the method, the included angle between the etching direction and the surface of the substrate is 90 degrees.
In the above method, the metal layer is a tungsten layer.
In the above method, the maximum radial dimension of the particles is greater than or equal to 0.8 microns.
In the above method, the particles comprise a material different from a host material of the metal layer.
The thickness of the metal layer is
In the method, the process gas for anisotropic dry etching comprises SF6The etching power is 800W.
In the above method, the non-metallic material layer is silicon oxide or silicon nitride.
In the above method, the substrate comprises a silicon wafer.
Compared with the prior art, the method for detecting the particles on the surface of the metal layer provided by the invention has the advantages that the metal layer grows on the substrate, then metal etching is carried out, the metal layer outside the particle area on the substrate is removed, the lower substrate surface layer (which is a non-metal material layer) is exposed, and then particle detection is carried out by utilizing the existing optical particle detection device.
Drawings
Fig. 1 is a schematic flow chart of a method for detecting particles on a surface of a metal layer according to an embodiment of the present invention.
Fig. 2 to 4 are process diagrams of a method for detecting particles on a surface of a metal layer according to an embodiment of the present invention.
Description of reference numerals:
10-a substrate; 20-a metal layer; 21-granules.
Detailed Description
The inventor has found that the particle detection capability of the existing optical particle detection device is different for different surfaces of the substrate, for example, for oxide surface, the existing particle detection device can detect about 0.8 micron particles, but for surface particle detection on metal surface such as tungsten metal surface, the minimum detected particle size is about 3 micron, and the detection capability is reduced due to the mirror reflection effect of the metal tungsten surface.
The method for detecting particles on the surface of a metal layer according to the present invention will be described in further detail with reference to the accompanying drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 1 is a schematic flow chart of a method for detecting particles on a surface of a metal layer according to an embodiment of the present invention. Fig. 2 to 4 are process diagrams of a method for detecting particles on a surface of a metal layer according to an embodiment of the present invention. Referring to fig. 1 to 4, the present embodiment provides a method for detecting particles on a surface of a metal layer, including the following steps:
s1: providing a substrate 10, wherein the surface layer of the substrate 10 is a non-metallic material layer;
s2: forming a metal layer 20 on the surface of the substrate 10, wherein the metal layer 20 at least partially covers the non-metal material layer, the reflectivity of the metal layer 20 is greater than that of the non-metal material layer, and a plurality of particles 21 are formed on the metal layer 20;
s3: carrying out anisotropic dry etching on the substrate 10 to remove the metal layer 20 outside the region where the particles 21 are located;
s4: the substrate 10 is subjected to particle detection using an optical particle detection device to obtain information on the particles 21.
Specifically, as shown in fig. 2, the substrate 10 is, for example, a test piece, specifically, a silicon wafer, and the surface thereof is a silicon wafer surface, in another embodiment, the substrate 10 may be a semiconductor substrate formed with a front-end device structure, and the surface layer thereof is a non-metal layer, for example, the surface layer of the substrate 10 is covered with silicon oxide, but the invention is not limited thereto.
In step S2, a metal layer 20 is deposited on the surface of the substrate 10, wherein the metal layer 20 has a thickness of
Of a thickness of, for example
In this embodiment, the tungsten layer is formed by magnetron sputtering (sputter), and the tungsten layer may be used as a material of a metal lead or a grating. However, the present invention is not limited thereto, and the metal layer 20 according to the present invention may be formed by other processes. In other embodiments of the present invention, other metals may be used as the metal layer 20, such as aluminum (Al), and the thickness of the metal layer 20 may be adjusted according to the process requirement.
Due to the substrate 10, the metal target, the deposition tool (in this embodiment, a magnetron sputtering apparatus) or some factors of the process, some particles 21 are easily formed on the surface of the metal layer 20 during the deposition of the metal layer 20, the source of the particles 21 may be the metal target or the deposition tool, and the distribution of the particles 21 may reflect the information of the deposition process of the metal target or the metal layer 20. The material of the particles 21 may be different from the material of the body of the metal layer 20, for example, including a non-metallic material, but the particles 21 may also be larger particles (e.g., having a maximum radial dimension greater than or equal to 0.8 microns, or even greater than or equal to 3 microns) including the material of the body, which may cause the surface roughness of the metal layer 20 to deteriorate. The particles 21 may cause the metal layer 20 to be non-uniform, and when the metal layer 20 is etched, the particles 21 are difficult to remove due to the different material and bulk material or the larger volume. As shown in fig. 3, the particles 21 are attached to or partially embedded in the metal layer 20 in this embodiment. It will be appreciated by those skilled in the art that other shapes of particles may be attached to the surface and interior of the metal layer 20. In this embodiment, the specular reflection effect of the metal layer 20 is strong, and if the metal layer 20 is directly detected by the optical particle detection device, only some larger particles can be detected, for example, the optical particle detection device in this embodiment can only detect particles with a maximum radial dimension larger than or equal to 3 microns, while the same optical particle detection device can detect particles with a maximum radial dimension larger than or equal to 0.8 microns on a non-metal surface, such as an oxide surface, on the substrate 10. That is, the mirror reflection effect reduces the detection capability of the optical particle detection device, and detailed information of the particles 21 on the surface of the metal layer 20 cannot be obtained. And since a part of the particles 21 is embedded in a deep portion of the metal layer 20, a portion exposed above the surface is small, and thus the size of the particles detected by the existing optical particle detecting apparatus may not reflect the real size thereof.
After the metal layer 20 is formed in this embodiment, step S3 is performed, and the substrate 10 is etched in a direction perpendicular or close to perpendicular to the substrate 10 to remove the metal layer 20, where an included angle between the etching direction and the substrate surface is about 85 to 95 degrees, and preferably 90 degrees. It should be noted that, in this embodiment, a dry etching process for tungsten is adopted, and the dry etching process does not need extra steps of masking, cleaning after etching, and the like, but uses the particles 21 directly as a mask to dry etch the metal layer 20, the dry etching in this embodiment is anisotropic etching, and the etching rate in the direction perpendicular to the substrate 10 is much greater than the etching rates in other directions. After the etching is finished, the metal layer 20 directly below the particles 21 remains on the substrate 20. The dry etching conditions adopted in this embodiment are: the process gas comprises SF6(sulfur hexafluoride), the etching power is 800W, the etching pressure is 20mtorr, and the etching time is 300 s. One skilled in the art can select different etching conditions according to the thickness of the metal layer 20 and the different tools.
After the dry etching, as shown in fig. 4, the particles 21 and the metal layer 20 directly under the particles 21 remain on the surface of the substrate 10.
Because the surface layer of the substrate 10 is the non-metal layer before the metal layer 20 is deposited, the specular reflection effect of the non-metal layer is poor, the reflectivity of the metal layer 20 is greater than that of the non-metal material layer, and when light is incident on the surface of the substrate 10 (namely, the light is incident on the non-metal surface layer), the diffuse reflection effect is strong, so that the detection accuracy of the optical particle device is slightly influenced.
In step S4, the substrate 10 after the step S3 is subjected to particle detection by an optical particle detection device, and information of the particles 21 on the surface of the substrate 10, such as information including the position, size, or number of the particles 21, can be obtained.
The inventors have found through experiments that the particle distribution diagram obtained by performing the optical particle detection after performing steps S1-S4 on a silicon wafer in the present embodiment is distributed on a wafer map with a plurality of point-like particles, and when the same silicon wafer is not performing step S3, the particle distribution diagram obtained by using the same optical detection apparatus reflects that the number of particles is close to zero due to the influence of the specular reflection effect of the metal layer on the detection accuracy of the optical particle apparatus.
In summary, the present embodiment provides a method for detecting particles on the surface of a metal layer 20, wherein the metal layer 20 has a strong specular reflection effect, the particles 21 are attached to the surface of the metal layer 20, etching is performed in a direction perpendicular to a substrate 10, so that the particles 21 are left on the substrate 10, and then the particles 21 are detected by using an optical particle detection apparatus, so as to obtain information of the particles 21 on the surface of the metal layer 20.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the scope of the claims of the present invention, and any person skilled in the art can make possible the variations and modifications of the technical solutions of the present invention using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention, and therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention belong to the protection scope of the technical solutions of the present invention.
Claims (10)
1. A method of detecting particles on a surface of a metal layer, comprising:
providing a substrate, wherein the surface layer of the substrate is a non-metal material layer;
forming a metal layer on the surface of the substrate, wherein the metal layer at least partially covers the non-metal material layer, the reflectivity of the metal layer is greater than that of the non-metal material layer, and a plurality of particles are formed on the metal layer;
carrying out anisotropic dry etching on the substrate, removing the metal layer outside the area where the particles are located, and exposing the non-metal material layer on the surface of the substrate; and the number of the first and second groups,
and carrying out particle detection on the substrate by adopting an optical particle detection device to obtain the information of the particles.
2. The method according to claim 1, wherein an angle between an etching direction and a surface of the substrate is 85 to 95 degrees when the substrate is subjected to anisotropic dry etching.
3. The method according to claim 2, wherein the etching direction is at an angle of 90 degrees to the surface of the substrate.
4. The method of detecting particles on a surface of a metal layer according to claim 1, wherein the metal layer is a tungsten layer.
5. The method of detecting particles on a surface of a metal layer of claim 1, wherein the particles have a maximum radial dimension of greater than or equal to 0.8 μm.
6. The method of detecting particles on a surface of a metal layer of claim 1, wherein the particles comprise a material different from a host material of the metal layer.
7. The method of detecting particles on a surface of a metal layer of claim 1, wherein the thickness of the metal layer is
8. The method of detecting particles on a surface of a metal layer according to any one of claims 1 to 7, wherein the process gas for the anisotropic dry etching comprises SF6Etching power of 800W。
9. The method of detecting particles on a surface of a metal layer according to any one of claims 1 to 7, wherein the non-metallic material layer is silicon oxide or silicon nitride.
10. The method of detecting particles on a surface of a metal layer according to any one of claims 1 to 7, wherein the substrate comprises a silicon wafer.
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| CN201711421583.5A CN108109934B (en) | 2017-12-25 | 2017-12-25 | Method for detecting particles on surface of metal layer |
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| CN201711421583.5A CN108109934B (en) | 2017-12-25 | 2017-12-25 | Method for detecting particles on surface of metal layer |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5496506A (en) * | 1992-09-21 | 1996-03-05 | Sony Corporation | Process for removing fine particles |
| CN103632992A (en) * | 2012-08-13 | 2014-03-12 | 上海华虹宏力半导体制造有限公司 | Method for detecting particles etched according to dry-etching method |
| CN107301959A (en) * | 2016-04-15 | 2017-10-27 | 中芯国际集成电路制造(上海)有限公司 | The particle detection method of lithographic equipment |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW511215B (en) * | 2001-10-15 | 2002-11-21 | Macronix Int Co Ltd | Inspection method for dynamic particle contaminant state of the etching chamber |
| KR100501110B1 (en) * | 2002-11-28 | 2005-07-18 | 주식회사 실트론 | Analysis method for Micro-defect near suface of silicon wafer |
| US20040252298A1 (en) * | 2003-06-12 | 2004-12-16 | Luey Kenneth T. | Emulative particle contamination standard fabricated by particulate formation processes |
| JP2010278363A (en) * | 2009-05-29 | 2010-12-09 | Toyota Central R&D Labs Inc | Crystal defect detection method |
| JP6311542B2 (en) * | 2014-09-05 | 2018-04-18 | 株式会社Sumco | Crystal defect evaluation method and wafer manufacturing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5496506A (en) * | 1992-09-21 | 1996-03-05 | Sony Corporation | Process for removing fine particles |
| CN103632992A (en) * | 2012-08-13 | 2014-03-12 | 上海华虹宏力半导体制造有限公司 | Method for detecting particles etched according to dry-etching method |
| CN107301959A (en) * | 2016-04-15 | 2017-10-27 | 中芯国际集成电路制造(上海)有限公司 | The particle detection method of lithographic equipment |
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