CN108091679B - The wiring structure of the bending area of the flexible OLED display panel, the flexible OLED display panel - Google Patents

Abstract

The present invention provides a wiring structure in a bending area of a flexible OLED display panel. The wiring structure includes a plurality of first conductive strips, an insulating layer and a plurality of second conductive strips, and the plurality of first conductive strips are spaced apart from each other. Arrangement, the insulating layer is arranged on a plurality of first conductive strips and is arranged in the interval between the first conductive strips, the plurality of second conductive strips are arranged on the insulating layer at intervals, and the plurality of second conductive strips are arranged at intervals on the insulating layer. A plurality of second conductive strips are connected to the plurality of first conductive strips through the insulating layer. In the bending area of the flexible OLED display panel of the present invention, the existing wiring exchange layer is omitted, and the wiring structure in the bending area still has the characteristic of effectively releasing stress during bending, so that no bending break occurs. line risk.

Description

The wiring structure of the bending area of the flexible OLED display panel, the flexible OLED display panel

technical field

The invention belongs to the technical field of flexible display, and in particular relates to a wiring structure of a bending area of a flexible OLED display panel, and a flexible OLED display panel.

Background technique

At present, the design of the wiring in the bending area (Bending Area) BA of the flexible OLED display panel still adopts the first wiring (which is made of the same material as the gate of the transistor) GE1 and the second wiring (which is the same as the storage capacitor). The first capacitor electrode is made of the same material at the same time) GE2 is switched to the wiring switching layer (which is made of the same material as the source and drain of the transistor) SD, which can avoid the first trace GE1 and the first trace. The second trace GE2 is broken due to the large stress. The specific structure is shown in Figure 1. In FIG. 1 , the first wiring GE1, the second wiring GE2 and the wiring switching layer SD are not on the same layer, and the first wiring GE1 and the second wiring GE2 pass through vias (not shown) to their respective Corresponding trace change layer SD connection. Among them, the deep hole DH shown in FIG. 1 is used to fill the organic insulating material to better relieve stress during bending, which will be described below.

FIG. 2 is a schematic structural diagram of a bending region of a flexible OLED display panel in the prior art. Referring to FIG. 2 , in the bending area of the existing flexible OLED display panel, the interlayer insulating layer ILD is a three-layer design, which includes a first interlayer insulating layer _ILD1 made of SiO ₂ , a The second interlayer insulating layer ILD2 and the third interlayer insulating layer OILD made of an organic insulating material. The third interlayer insulating layer OILD exists only in the bending region, and other regions such as the display region do not have the third interlayer insulating layer OILD. Usually, the third interlayer insulating layer OILD will be poured into the deep hole (Dip Hole) DH in the bending area, so as to improve the bending resistance of the bending area. In addition, the first wiring GE1 is formed on the first insulating layer GI1, the second wiring GE2 is formed on the second insulating layer GI2, and the wiring switching layer SD is formed on the third interlayer insulating layer OILD. It is convenient to illustrate how the third interlayer insulating layer OILD is poured into the sink hole DH, so the first wiring GE1 and the second wiring GE2 are not shown.

In an actual process, after the third interlayer insulating layer OILD is poured into the sink hole DH, two bumps B1 are respectively formed on the second interlayer insulating layer ILD2, and the thicknesses of the two bumps B1 are both 1 μm. As described above, when the wiring changing layer SD is formed on the third interlayer insulating layer OILD, the thickness of the wiring changing layer SD is 0.7 μm. In this way, the sum of the thickness of the bump B1 and the thickness of the wiring switching layer SD is 1.7 μm, and the thickness of the flat layer PLN is 1.5 μm, which will cause the wiring switching layer SD of the bump B1 to exceed the flat layer PLN. When the cathodic etching (Anode Etch) is performed later, the wiring change layer SD beyond the flat layer PLN will be etched away, thereby affecting the stability of the connection between the wiring change layer SD and the first wiring GE1 and the second wiring GE2. properties, which in turn affect device characteristics.

SUMMARY OF THE INVENTION

In order to solve the above-mentioned problems in the prior art, the purpose of the present invention is to provide a wiring structure and a flexible OLED display panel in the bending area of the flexible OLED display panel with the wiring changing layer in the bending area removed.

According to an aspect of the present invention, a wiring structure in a bending area of a flexible OLED display panel is provided. The wiring structure includes a plurality of first conductive strips, an insulating layer and a plurality of second conductive strips. The first conductive strips are arranged at intervals, the insulating layer is arranged on a plurality of first conductive strips and is arranged in the space between the first conductive strips, and the plurality of second conductive strips are arranged at intervals on the insulating layer above, the plurality of second conductive strips are connected to the plurality of first conductive strips through the insulating layer.

Further, each second conductive strip is opposite to the interval between the corresponding two adjacent first conductive strips, and each second conductive strip penetrates through the insulating layer to be respectively connected with the corresponding adjacent two first conductive strips. bar connection.

Further, the plurality of second conductive strips are integrally connected to each other, and the plurality of first conductive strips are integrally connected to each other.

Further, the first conductive strip and the gate of the transistor of the flexible OLED display panel are made of the same material at the same time, and the second conductive strip and the first capacitance electrode of the storage capacitor of the flexible OLED display panel are made at the same time. The same material is used to manufacture at the same time; wherein, the second capacitance electrode of the storage capacitor of the flexible OLED display panel is shared with the gate electrode of the transistor of the flexible OLED display panel.

Further, the second conductive strip and the gate of the transistor of the flexible OLED display panel are made of the same metal material at the same time, and the first conductive strip and the active layer of the transistor of the flexible OLED display panel are made of the same metal material. Made of the same material at the same time.

Further, the second conductive strip and the first capacitance electrode of the storage capacitor of the flexible OLED display panel are made of the same metal material at the same time, and the first conductive strip and the transistor of the flexible OLED display panel have the same metal material. The source layer is made of the same material at the same time; wherein, the second capacitance electrode of the storage capacitor of the flexible OLED display panel is shared with the gate electrode of the transistor of the flexible OLED display panel.

According to another aspect of the present invention, a wiring structure in a bending area of a flexible OLED display panel is also provided, wherein the wiring structure includes a first wiring and a second wiring insulated from each other, the first wiring and the second traces are both curved.

Further, the first wiring and the gate electrode of the transistor of the flexible OLED display panel are made of the same material at the same time.

Further, the second wiring and the first capacitance electrode of the storage capacitor of the flexible OLED display panel are made of the same material at the same time; wherein, the second capacitance electrode of the storage capacitor of the flexible OLED display panel is made of the same material as the first capacitance electrode of the storage capacitor of the flexible OLED display panel. The gates of the transistors of the flexible OLED display panel are shared.

According to yet another aspect of the present invention, a flexible OLED display panel is further provided, wherein the bending region of the flexible OLED display panel has the above-mentioned wiring structure.

Beneficial effects of the present invention: in the bending area of the flexible OLED display panel of the present invention, the existing wiring exchange layer is omitted, and the wiring structure in the bending area still has the characteristic of effectively releasing stress when it is bent, As a result, there is no risk of bending and breaking the wire.

Description of drawings

The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

1 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel in the prior art;

FIG. 2 is a schematic structural diagram of a bending region of a flexible OLED display panel in the prior art;

3 is a schematic structural diagram of a display area of a flexible OLED display panel according to an embodiment of the present invention;

4 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel according to an embodiment of the present invention;

5 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel according to another embodiment of the present invention;

6 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel according to yet another embodiment of the present invention;

7 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel according to yet another embodiment of the present invention;

8 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel according to yet another embodiment of the present invention;

FIG. 9 is a schematic structural diagram of a bending region of a flexible OLED display panel according to an embodiment of the present invention.

Detailed ways

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application, to thereby enable others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular intended use.

In the drawings, the thickness of layers and regions are exaggerated for clarity. The same reference numbers refer to the same components throughout the specification and drawings.

It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another.

It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Optionally, when an element is referred to as being "directly on" another element, there are no intervening elements present.

FIG. 3 is a schematic structural diagram of a display area of a flexible OLED display panel according to an embodiment of the present invention.

3, the display area of the flexible OLED display panel according to the embodiment of the present invention includes: a flexible substrate 100, an interlayer buffer layer 110, an active layer 120, a source electrode 130a, a drain electrode 130b, a first insulating layer 140, a gate electrode 150, second insulating layer 160, first capacitor electrode 170, first interlayer insulating layer 180a, second interlayer insulating layer 180b, source contact layer 190a, drain contact layer 190b, flat layer 200, cathode 210, A pixel defining layer 220 , an organic light-emitting layer (or called an OLED functional layer) 230 , and an anode 240 .

Specifically, the flexible substrate 100 includes a first substrate 101 , an inter-board buffer layer 102 provided on the first substrate 101 , and a second substrate 103 provided on the inter-board buffer layer 102 . The first substrate 101 and the second substrate 103 are made of polyimide (PI) or other suitable flexible materials.

The interlayer buffer layer 110 is disposed on the second substrate 103 . The active layer 120 , the source electrode 130 a and the drain electrode 130 b are disposed on the interlayer buffer layer 110 , and the source electrode 130 a and the drain electrode 130 b are located on both sides of the active layer 120 , respectively.

The first insulating layer 140 is disposed on the active layer 120 , the source electrode 130 a , the drain electrode 130 b and the interlayer buffer layer 110 . The gate 150 is disposed on the first insulating layer 140 . The second insulating layer 160 is disposed on the first insulating layer 140 and the gate electrode 150 . The first capacitor electrode 170 is disposed on the second insulating layer 160 , and the first capacitor electrode 170 is opposite to the gate electrode 150 . In this embodiment, in addition to being used as a gate of a transistor, the gate 150 can also be used as a second capacitor electrode to form a storage capacitor (not shown) with the first capacitor electrode 170 .

The first interlayer insulating layer 180 a is disposed on the first capacitor electrode 170 and the second insulating layer 160 . The first interlayer insulating layer 180a is made of SiO ₂ . The second interlayer insulating layer 180b is disposed on the first interlayer insulating layer 180a, and the second interlayer insulating layer 180b is made of _SiNx .

The source contact layer 190a and the drain contact layer 190b are disposed on the second interlayer insulating layer 180b, and the source contact layer 190a and the drain contact layer 190b penetrate through the second interlayer insulating layer 180b, the first interlayer insulating layer 180a, The second insulating layer 160 and the first insulating layer 140 are then in contact with the source electrode 130a and the drain electrode 130b, respectively.

The flat layer 200 is disposed on the source contact layer 190a, the drain contact layer 190b and the second interlayer insulating layer 180b. The cathode 210 is disposed on the flat layer 200, and the cathode 210 penetrates through the flat layer 200 and then contacts the drain contact layer 190b.

The pixel-defining layer 220 is disposed on the flat layer 200 and the cathode 210 , and the pixel-defining layer 220 has a via hole (not shown) therein, and the via hole exposes a portion of the cathode 210 . The organic light emitting layer 230 is disposed on the exposed cathode 210 , and the anode 240 is disposed on the organic light emitting layer 230 .

4 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel according to an embodiment of the present invention. In FIG. 4 , the left figure is a plan view, and the right figure is a cross-sectional view taken along the line A-A in the plan view. It should be noted that each wiring of the flexible OLED display panel according to the embodiment of the present invention, such as the gate wiring, the wiring of the first capacitor electrode and other wirings, can all adopt the wiring structure shown in FIG. 4 . In addition, in FIG. 4 , in order to facilitate the illustration of the connection relationship between the first conductive strip and the second conductive strip, the trace insulation layer and other insulation layers are not shown.

Referring to FIG. 4 , the wiring structure of the bending region of the flexible OLED display panel according to the embodiment of the present invention includes a plurality of first conductive strips 10 , a first wiring insulating layer 20 and a plurality of second conductive strips 30 .

The plurality of first conductive strips 10 are arranged at intervals. Further, the plurality of first conductive strips 10 are arranged at intervals along the lateral direction. The first wiring insulating layer 20 is disposed on the plurality of first conductive strips 10 and in the interval between two adjacent first conductive strips 10 . A plurality of second conductive strips 30 are disposed on the first trace insulating layer 20, and the plurality of second conductive strips 30 are also arranged at intervals. Further, the plurality of second conductive strips 30 are arranged at intervals along the lateral direction. The plurality of second conductive strips 30 are connected to the plurality of first conductive strips 10 through the first wiring insulating layer 20 .

In this way, the multiple second conductive strips 30 and the multiple first conductive strips 10 are layered and connected to form the wiring structure in the bending area of the flexible OLED display panel, which helps the wiring structure to be released when the bending area is bent stress, so that it is not easy to break.

Further, in order to further relieve the stress generated when the wiring structure is bent, each second conductive strip 30 is opposite to the interval between the corresponding two adjacent first conductive strips 10, and each second conductive strip 30 The first trace insulating layer 20 is penetrated to connect with the corresponding adjacent two first conductive strips 10 respectively. That is to say, the plurality of second conductive strips 30 and the plurality of first conductive strips 10 are alternately arranged up and down and connected in series to form the wiring structure.

In this embodiment, the first conductive strip 10 and the gate 150 are made of the same material at the same time, and the second conductive strip 10 and the first capacitor electrode 170 are made of the same material at the same time, so the first trace is insulated. The layer 20 and the second insulating layer 160 are made of the same material at the same time. Of course, it should be understood that the second wiring insulating layer 40 can be made of the same material as the first insulating layer 140 under the plurality of first conductive strips 10 at the same time. The same material as the first interlayer insulating layer 180a can be used to form the third wiring insulating layer 50 on the wiring insulating layer 20 at the same time.

5 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel according to another embodiment of the present invention. In FIG. 5 , the left figure is a plan view, and the right figure is a cross-sectional view taken along the line B-B in the plan view. It should be noted that each wiring of the flexible OLED display panel according to the embodiment of the present invention, such as the gate wiring, the wiring of the first capacitor electrode and other wirings, can all adopt the wiring structure shown in FIG. 5 .

Referring to FIG. 5 , the difference from the wiring structure shown in FIG. 4 is that the first conductive strip 10A is made of the same material as the active layer 120 and the second conductive strip 30A and the gate 150 are made of the same material. The same material is made at the same time, so the first wiring insulating layer 20A and the first insulating layer 140 are made of the same material at the same time. Of course, it should be understood that the second wiring insulating layer 40A can be made of the same material as the interlayer buffer layer 110 under the plurality of first conductive strips 10A at the same time, while the plurality of second conductive strips 30A and the first conductive strips 30A can be made of the same material. The third wire insulation layer 50A can be simultaneously formed on the wire insulation layer 20A by using the same material as the first interlayer insulation layer 180a.

6 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel according to yet another embodiment of the present invention. In FIG. 6 , the left figure is a plan view, and the right figure is a cross-sectional view taken along line C-C in the plan view. It should be noted that each wiring of the flexible OLED display panel according to the embodiment of the present invention, such as the gate wiring, the wiring of the first capacitor electrode and other wirings, can adopt the wiring structure shown in FIG. 6 .

Referring to FIG. 6 , the difference from the wiring structure shown in FIG. 4 is that the first conductive strip 10B, the second conductive strip 30B and the first capacitor electrode are made of the same material as the active layer 120 at the same time. 170 is made of the same material at the same time, so the first trace insulating layer 20B is composed of two insulating layers, and one insulating layer and the first insulating layer 140 are made of the same material at the same time, and the other insulating layer is made of the same material. The second insulating layer 160 is made of the same material at the same time. Of course, it should be understood that the second wiring insulating layer 40B can be made of the same material as the interlayer buffer layer 110 under the plurality of first conductive strips 10B at the same time. The same material as the second insulating layer 160 can be used to form the third wiring insulating layer 50B on the wiring insulating layer 20B at the same time.

7 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel according to yet another embodiment of the present invention. In FIG. 7 , the left figure is a plan view, and the right figure is a cross-sectional view taken along the line D-D in the plan view. It should be noted that each wiring of the flexible OLED display panel according to the embodiment of the present invention, such as the gate wiring, the wiring of the first capacitor electrode and other wirings, can all adopt the wiring structure shown in FIG. 7 .

Referring to FIG. 7 , the difference from the wiring structure shown in FIG. 4 is that the plurality of first conductive strips 10 shown in FIG. 4 are connected to each other to form a first conductive strip 10C shown in FIG. The plurality of second conductive strips 30 are integrally connected to each other to form the second conductive strip 30C shown in FIG.

8 is a schematic diagram of a wiring structure in a bending region of a flexible OLED display panel according to yet another embodiment of the present invention. In FIG. 8 , the wiring structure of the bending area of the flexible OLED display panel according to another embodiment of the present invention includes a first wiring GE1 and a second wiring GE2 , wherein the first wiring GE1 can be used as a gate wiring , the second trace GE2 can be used as the first capacitor electrode trace, but the invention is not limited to this. The second wire GE2 and the first capacitor electrode 170 are made of the same material, and the first wire GE1 and the gate 150 are made of the same material.

In this embodiment, the first wiring GE1 and the second wiring GE2 in the bending area BA of the flexible OLED display panel are in a curved shape to release the bending stress during bending, so that the phenomenon of breaking is not easy to occur. Further, the first wire GE1 and the second wire GE2 are in an S-shaped curved shape, but the present invention is not limited thereto.

Through the wiring structures of the above embodiments, the wiring switching layer SD (shown in FIG. 4 ) in the bending region of the flexible OLED display panel can be removed, thereby avoiding the risk of corrosion. The structure of the bending region of the flexible OLED display panel according to the embodiment of the present invention will be described in detail below.

FIG. 9 is a schematic structural diagram of a bending region of a flexible OLED display panel according to an embodiment of the present invention.

9 , the bending area of the flexible OLED display panel according to the embodiment of the present invention includes: a flexible substrate 100, an interlayer buffer layer 110, a first insulating layer 140, a second insulating layer 160, and a first interlayer insulating layer 180a , a second interlayer insulating layer 180b, a third interlayer insulating layer 180c, a flat layer 200, and a pixel defining layer 220. In FIG. 9, in order to facilitate the illustration of the hole filling effect of the third interlayer insulating layer 180c, the wiring structure is not shown. It should be understood that the bending region of the flexible OLED display panel according to the embodiment of the present invention has at least one of the wiring structures shown in FIGS. 4 to 8 .

Specifically, the flexible substrate 100 includes a first substrate 101 , an inter-board buffer layer 102 provided on the first substrate 101 , and a second substrate 103 provided on the inter-board buffer layer 102 . The first substrate 101 and the second substrate 103 are made of polyimide (PI) or other suitable flexible materials.

The interlayer buffer layer 110 , the first insulating layer 140 , the second insulating layer 160 , the first interlayer insulating layer 180 a and the second interlayer insulating layer 180 b are sequentially stacked on the second substrate 103 . The sink holes DH are formed in the first insulating layer 140, the second insulating layer 160, the first interlayer insulating layer 180a, and the second interlayer insulating layer 180b. The third interlayer insulating layer 180c is disposed on the second interlayer insulating layer 180b and filled with the sink hole DH. The flattening layer 200 and the pixel defining layer 220 are sequentially stacked on the second interlayer insulating layer 180b and the third interlayer insulating layer 180c.

In this way, the existing wiring exchange layer is omitted in the bending area of the flexible OLED display panel according to the embodiment of the present invention, and the wiring structure in the bending area still has the characteristic of effectively releasing stress during bending, As a result, there is no risk of bending and breaking the wire.

While the invention has been shown and described with reference to specific embodiments, those skilled in the art will appreciate that forms and Various changes in details.

Claims (3)

1. A wiring structure in a bending area of a flexible OLED display panel, wherein the wiring structure comprises a plurality of first conductive strips, an insulating layer and a plurality of second conductive strips, the plurality of first conductive strips The strips are arranged at intervals, the insulating layer is arranged on a plurality of first conductive strips and is arranged in the interval between the first conductive strips, and the plurality of second conductive strips are arranged at intervals on the insulating layer, so the plurality of second conductive strips are connected to the plurality of first conductive strips through the insulating layer; Wherein, the first conductive strip and the gate of the transistor of the flexible OLED display panel are made of the same metal material at the same time, and the second conductive strip and the first capacitance electrode of the storage capacitor of the flexible OLED display panel are made at the same time. Made of the same material at the same time; Alternatively, the first conductive strip and the active layer of the transistor of the flexible OLED display panel are made of the same material at the same time, and the gate of the second conductive strip of the transistor of the flexible OLED display panel is made of the same metal materials are made at the same time; Alternatively, the first conductive strip and the active layer of the transistor of the flexible OLED display panel are made of the same material at the same time, and the second conductive strip and the first capacitance electrode of the storage capacitor of the flexible OLED display panel are made at the same time. Made of the same material at the same time. 2 . The wiring structure according to claim 1 , wherein each second conductive strip is opposite to the interval between corresponding two adjacent first conductive strips, and each second conductive strip penetrates the The insulating layer is respectively connected with the corresponding adjacent two first conductive strips. 3 . A flexible OLED display panel, wherein a bending region of the flexible OLED display panel has the wiring structure according to claim 1 or 2 .

Images