CN108091609A - The method that tungsten fills groove structure - Google Patents
The method that tungsten fills groove structure Download PDFInfo
- Publication number
- CN108091609A CN108091609A CN201711178368.7A CN201711178368A CN108091609A CN 108091609 A CN108091609 A CN 108091609A CN 201711178368 A CN201711178368 A CN 201711178368A CN 108091609 A CN108091609 A CN 108091609A
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- Prior art keywords
- tungsten
- layer
- groove structure
- fluorine
- titanium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a kind of method of tungsten filling groove structure, including step：Step 1: form groove structure；Step 2: form titanium nitride layer；Step 3: tungsten nucleating layer is formed as tungsten source using WF6；Step 4: carry out fluorine removal processing；Step 5: it carries out using CVD technique deposition tungsten body layers of the WF6 as tungsten source；Step 6: carrying out the chemical mechanical grinding technics of tungsten, the tungsten metal structure being only made of the titanium nitride layer, tungsten nucleating layer and the tungsten body layer that are filled in groove structure is formed.The present invention can reduce the fluorine residue in tungsten nucleating layer, reduce the thickness of titanium nitride layer, so as to reduce the resistance of entire tungsten metal structure and promote the performance of device.
Description
Technical field
The present invention relates to a kind of manufacturing method of semiconductor integrated circuit, more particularly to a kind of tungsten filling groove structure
Method.
Background technology
The fill process of tungsten is widely used in most of advanced semiconductor devices, this is because tungsten has
Relatively low resistance, the spy with preferable conformality and energy filling narrow trenches when carrying out the trench fill of bulk high-aspect-ratio
Property.For example, tungsten has been applied in logic contact, local metal interconnection (local interconnect, LIC) and metal gate
In the fill process of (metal gate, MG).In the prior art, generally use following steps during tungsten filling groove：
First, titanium nitride layer (TiN) is formed, the thickness of titanium nitride layer is 30 angstroms~50 angstroms, and titanium nitride layer is i.e. as adherency
Adhesion layer on dielectric layer, and as the fluorine diffusion in the CVD depositing technics of a barrier layer barrier metal tungsten.
Then silane (SiH4), is added as tungsten source using WF6 or borine (B2H6) carries out atomic layer deposition (ALD) work
Skill forms tungsten nucleating layer (nucleation).
Finally, carry out using WF6 as tungsten source CVD techniques the tungsten nucleating layer surface deposition tungsten body layer.
Up to the present, TiN is the barrier layer that the adhesion layer of the tungsten for the best CVD deposits being currently known and F are spread,
It but still needs to form tungsten nucleating layer before the tungsten body layer of CVD techniques deposit, if it is possible to realize not fluorine-containing tungsten
The deposit of (Flourine-free W, FFW), then can reduce the required thickness of TiN can need not even use TiN.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of methods of tungsten filling groove structure, can reduce in tungsten nucleating layer
Fluorine residue, improve the performance of device.
In order to solve the above technical problems, the method for tungsten filling groove structure provided by the invention includes the following steps：
Step 1: form groove structure.
Step 2: forming titanium nitride layer, adhesion layer and fluorine diffusion impervious layer that titanium nitride layer is filled as follow-up tungsten；It is described
Titanium nitride layer is formed at the inner surface of the groove structure and extends to the surface outside the groove structure；The titanium nitride layer
Fluorine residue amount of the thickness in the tungsten metal structure being subsequently formed be configured, the fluorine residue amount in the tungsten metal structure
Lower, the thickness of the titanium nitride layer is thinner, and the tungsten metal structure resistance is lower.
Step 3: tungsten nucleating layer is formed on the titanium nitride layer surface as tungsten source using WF6.
Step 4: the fluorine removal processing for the fluorine residue being removed in the tungsten nucleating layer.
Step 5: carry out using WF6 as tungsten source CVD techniques the tungsten nucleating layer surface deposition tungsten body layer simultaneously
The groove structure is filled up completely.
Step 6: the chemical mechanical grinding technics of tungsten is carried out by the tungsten body layer, described outside the groove structure
Tungsten nucleating layer, the titanium nitride layer all remove, and form the titanium nitride layer, the tungsten only by being filled in the groove structure
The tungsten metal structure of nucleating layer and tungsten body layer composition.
A further improvement is that groove structure described in step 1 is formed in first medium layer and is situated between through described first
Matter layer, the first medium layer is located at semiconductor substrate surface and the groove structure will be described in the first medium layer bottom
Semiconductor substrate surface exposes.
A further improvement is that the tungsten metal structure is metal gate, described half covered by the tungsten metal structure
Channel region is formed in conductor substrate.
A further improvement is that the tungsten metal structure is contact hole, described half covered by the tungsten metal structure
The doped region in need being brought out is formed in conductor substrate.
A further improvement is that the doped region that the needs formed in the Semiconductor substrate are brought out includes N+ areas or P+
Area.
A further improvement is that the tungsten metal structure be through hole, the groove structure be placed through two metal layers it
Between interlayer film.
A further improvement is that the tungsten nucleating layer is formed using atomic layer deposition processes in step 3.
A further improvement is that process gas adds SiH4 or B2H6 for WF6 used by the atomic layer deposition processes.
A further improvement is that the fluorine removal processing of step 4 is handled using H2 plasmas.
A further improvement is that the H2 plasmas remove the local plasma provided in process chambers for the fluorine
Body；Alternatively, the H2 plasmas remove the remote plasma provided outside process chambers for the fluorine.
A further improvement is that the radio-frequency power of the H2 plasmas is 10W~800W.
A further improvement is that the H2 flows of the H2 plasmas are 50sccm~5000sccm.
A further improvement is that the fluorine removal processing in step 4 is also inserted into the tungsten body layer deposition process
And the fluorine residue in the tungsten to be formed is deposited to the tungsten body layer and is removed.
A further improvement is that the fluorine removal number of processing is inserted into the tungsten body layer deposition process as once
More than.
A further improvement is that tungsten body layer described in step 5 deposit the gas of corresponding CVD techniques using WF6 and
H2。
The present invention is handled by the fluorine removal of the fluorine residue in forming tungsten nucleating layer and increasing step removal tungsten nucleating layer, energy
The fluorine in the tungsten for even eliminating and being in contact with titanium nitride layer is reduced, and since titanium nitride layer is also used as in tungsten in addition to doing adhesion layer
Fluorine diffusion barrier layer, since the fluorine in the tungsten that is in contact with titanium nitride layer decreases or even eliminates, therefore titanium nitride can be reduced
The thickness of layer, and the thickness for reducing titanium nitride layer can reduce the resistance of entire tungsten metal structure, so as to promote the property of device
Energy.
The technique of the fluorine removal processing of the present invention is in addition to it can directly remove the fluorine residue in tungsten nucleating layer, moreover it is possible to be inserted into
In the CVD depositing technics of tungsten body layer, the fluorine residue that can be further reduced in entire tungsten metal structure.
Description of the drawings
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings：
Fig. 1 is the flow chart of the method for tungsten of embodiment of the present invention filling groove structure；
Fig. 2A-Fig. 2 F are the device junction compositions in each step of present invention method.
Specific embodiment
As shown in Figure 1, it is the flow chart of the method for tungsten of embodiment of the present invention filling groove structure；As Fig. 2A to Fig. 2 F institute
Show, be the device junction composition in each step of present invention method；Tungsten of the embodiment of the present invention fills the method bag of groove structure
Include following steps：
Step 1: as shown in Figure 2 A, form groove structure 201.
The groove structure 201 is formed in first medium layer 101 and passes through the first medium layer 101, and described first
Dielectric layer 101 is located at semiconductor substrate surface and the groove structure 201 partly leads the described of 101 bottom of first medium layer
Body substrate surface exposes.
Step 2: as shown in Figure 2 B, form titanium nitride layer 102, titanium nitride layer 102 as the adhesion layer that follow-up tungsten is filled with
Fluorine diffusion impervious layer；The titanium nitride layer 102 is formed at the inner surface of the groove structure 201 and extends to the groove knot
Surface outside structure 201；Fluorine residue amount of the thickness of the titanium nitride layer 102 in the tungsten metal structure being subsequently formed is set
It puts, the fluorine residue amount in the tungsten metal structure is lower, and the thickness of the titanium nitride layer 102 is thinner, the tungsten metal structure electricity
Resistance is lower.
Step 3: as shown in Figure 2 C, tungsten nucleating layer is formed on 102 surface of titanium nitride layer as tungsten source using WF6
103。
Preferably, the tungsten nucleating layer 103 is formed using atomic layer deposition processes.The atomic layer deposition processes are used
Process gas add SiH4 or B2H6 for WF6.
Step 4: as shown in Figure 2 D, it is removed the fluorine removal processing of the fluorine residue in the tungsten nucleating layer 103.It is described
Fluorine residue in tungsten nucleating layer 103 is please referred to Fig.2 after fluorine residue removal shown in D as shown in the mark 202 in Fig. 2 C.
Preferably, the fluorine removal processing is handled using H2 plasmas.The H2 plasmas go for the fluorine
Except the local plasma (Local Plasma) provided in process chambers；Alternatively, the H2 plasmas remove for the fluorine
The remote plasma (Remote Plasma) provided outside process chambers.
The radio-frequency power of the H2 plasmas is 10W~800W.The H2 flows of the H2 plasmas for 50sccm~
5000sccm。
Step 5: as shown in Figure 2 E, use CVD techniques of the WF6 as tungsten source on the surface of the tungsten nucleating layer 103
The groove structure 201 is simultaneously filled up completely by deposition tungsten body layer 104.
Preferably, the tungsten body layer 104 deposits the gas of corresponding CVD techniques using WF6 and H2.
Fluorine removal processing in step 4 is also inserted into 104 deposition process of tungsten body layer and to the tungsten master
Fluorine residue in the tungsten that the deposit of body layer 104 is formed is removed.The fluorine is inserted into 104 deposition process of tungsten body layer
Except number of processing more than once namely to form multiple circulation steps of " dep-treat " composition, dep corresponds to the tungsten
The CVD depositing technics of body layer 104, treat are handled corresponding to the fluorine removal.
Step 6: as shown in Figure 2 F, carrying out the chemical mechanical grinding technics of tungsten will be described in outside the groove structure 201
Tungsten body layer 104, the tungsten nucleating layer 103, the titanium nitride layer 102 all remove, and are formed only by being filled in the groove structure
The tungsten metal structure of the titanium nitride layer 102, the tungsten nucleating layer 103 and the tungsten body layer 104 composition in 201.
Preferably, the tungsten metal structure be metal gate, the Semiconductor substrate covered by the tungsten metal structure
In be formed with channel region.Alternatively, the tungsten metal structure is contact hole, the semiconductor covered by the tungsten metal structure
The doped region in need being brought out is formed in substrate；The doped region that the needs formed in the Semiconductor substrate are brought out includes
N+ areas or P+ areas.Alternatively, the tungsten metal structure is through hole, the groove structure 201 is placed through between two metal layers
Interlayer film.
The embodiment of the present invention passes through the fluorine residue in forming tungsten nucleating layer 103 and increasing step removal tungsten nucleating layer 103
Fluorine removal is handled, and can reduce the fluorine in the tungsten that even elimination is in contact with titanium nitride layer 102, and due to titanium nitride layer 102 except
The barrier layer also as the fluorine diffusion in tungsten outside adhesion layer is done, due to the fluorine reduction in the tungsten that is in contact with titanium nitride layer 102 very
To elimination, therefore the thickness of titanium nitride layer 102 can be reduced, and the thickness for reducing titanium nitride layer 102 can reduce entire tungsten metal
The resistance of structure, so as to promote the performance of device.
The fluorine of the embodiment of the present invention removes the technique of processing in addition to it can directly remove the fluorine residue in tungsten nucleating layer 103,
It can also be inserted into the CVD depositing technics of tungsten body layer 104, the fluorine residue that can be further reduced in entire tungsten metal structure.
The present invention is described in detail above by specific embodiment, but these are not formed to the present invention's
Limitation.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these
It should be regarded as protection scope of the present invention.
Claims (15)
- A kind of 1. method of tungsten filling groove structure, which is characterized in that include the following steps：Step 1: form groove structure；Step 2: forming titanium nitride layer, adhesion layer and fluorine diffusion impervious layer that titanium nitride layer is filled as follow-up tungsten；The nitridation Titanium layer is formed at the inner surface of the groove structure and extends to the surface outside the groove structure；The thickness of the titanium nitride layer Fluorine residue amount of the degree in the tungsten metal structure being subsequently formed is configured, and the fluorine residue amount in the tungsten metal structure is got over Low, the thickness of the titanium nitride layer is thinner, and the tungsten metal structure resistance is lower；Step 3: tungsten nucleating layer is formed on the titanium nitride layer surface as tungsten source using WF6；Step 4: the fluorine removal processing for the fluorine residue being removed in the tungsten nucleating layer；Step 5: carry out using WF6 as tungsten source CVD techniques the tungsten nucleating layer surface deposition tungsten body layer and by institute Groove structure is stated to be filled up completely；Step 6: carry out tungsten chemical mechanical grinding technics by outside the groove structure the tungsten body layer, the tungsten into Stratum nucleare, the titanium nitride layer all remove, and are formed and are only nucleated by the titanium nitride layer, the tungsten that are filled in the groove structure The tungsten metal structure of layer and tungsten body layer composition.
- 2. the method for tungsten filling groove structure as described in claim 1, it is characterised in that：Groove structure shape described in step 1 Into in first medium layer and through the first medium layer, the first medium layer is located at semiconductor substrate surface and described recessed Slot structure exposes the semiconductor substrate surface of the first medium layer bottom.
- 3. the method for tungsten filling groove structure as claimed in claim 2, it is characterised in that：The tungsten metal structure is metal Grid are formed with channel region in the Semiconductor substrate covered by the tungsten metal structure.
- 4. the method for tungsten filling groove structure as claimed in claim 2, it is characterised in that：The tungsten metal structure is contact Hole forms the doped region in need being brought out in the Semiconductor substrate covered by the tungsten metal structure.
- 5. the method for tungsten filling groove structure as claimed in claim 4, it is characterised in that：It is formed in the Semiconductor substrate The doped region that is brought out of needs include N+ areas or P+ areas.
- 6. the method for tungsten filling groove structure as described in claim 1, it is characterised in that：The tungsten metal structure is through hole, The groove structure is placed through the interlayer film between two metal layers.
- 7. the method for tungsten filling groove structure as described in claim 1, it is characterised in that：Atomic layer deposition is used in step 3 Technique forms the tungsten nucleating layer.
- 8. the method for tungsten filling groove structure as claimed in claim 7, it is characterised in that：The atomic layer deposition processes are adopted Process gas is that WF6 adds SiH4 or B2H6.
- 9. the method for tungsten filling groove structure as described in claim 1, it is characterised in that：The fluorine removal processing of step 4 It is handled using H2 plasmas.
- 10. the method for tungsten filling groove structure as claimed in claim 9, it is characterised in that：The H2 plasmas are described The local plasma provided in fluorine removal process chambers；Alternatively, the H2 plasmas are removed for the fluorine outside process chambers The remote plasma of offer.
- 11. the method for tungsten filling groove structure as claimed in claim 9, it is characterised in that：The radio frequency of the H2 plasmas Power is 10W~800W.
- 12. the method for tungsten filling groove structure as claimed in claim 9, it is characterised in that：The H2 streams of the H2 plasmas It measures as 50sccm~5000sccm.
- 13. the method for tungsten filling groove structure as claimed in claim 9, it is characterised in that：Fluorine removal in step 4 Processing is also inserted into the tungsten body layer deposition process and the progress of the fluorine residue in the tungsten to be formed is deposited to the tungsten body layer Removal.
- 14. the method for tungsten filling groove structure as claimed in claim 13, it is characterised in that：It was deposited in the tungsten body layer Fluorine removal number of processing is inserted into journey as more than once.
- 15. the method for tungsten filling groove structure as described in claim 1, it is characterised in that：Tungsten body layer described in step 5 The gas for depositing corresponding CVD techniques uses WF6 and H2.
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| CN201711178368.7A CN108091609A (en) | 2017-11-23 | 2017-11-23 | The method that tungsten fills groove structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711178368.7A CN108091609A (en) | 2017-11-23 | 2017-11-23 | The method that tungsten fills groove structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065495A (en) * | 2018-07-13 | 2018-12-21 | 上海华力微电子有限公司 | The method of not fluorine-containing tungsten metal layer is formed in tungsten filling groove structure |
| CN109545741A (en) * | 2018-12-05 | 2019-03-29 | 上海华力集成电路制造有限公司 | The method of tungsten filling groove structure |
| CN113345904A (en) * | 2020-03-02 | 2021-09-03 | 圆益Ips股份有限公司 | Substrate processing method and semiconductor device manufactured by the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1741264A (en) * | 2004-08-26 | 2006-03-01 | 尔必达存储器株式会社 | Method of manufacturing semiconductor device |
| CN101894793A (en) * | 2009-05-21 | 2010-11-24 | 新加坡格罗方德半导体制造私人有限公司 | Integrated circuit (IC) system and manufacture method thereof with silicon through hole |
-
2017
- 2017-11-23 CN CN201711178368.7A patent/CN108091609A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1741264A (en) * | 2004-08-26 | 2006-03-01 | 尔必达存储器株式会社 | Method of manufacturing semiconductor device |
| CN101894793A (en) * | 2009-05-21 | 2010-11-24 | 新加坡格罗方德半导体制造私人有限公司 | Integrated circuit (IC) system and manufacture method thereof with silicon through hole |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065495A (en) * | 2018-07-13 | 2018-12-21 | 上海华力微电子有限公司 | The method of not fluorine-containing tungsten metal layer is formed in tungsten filling groove structure |
| CN109065495B (en) * | 2018-07-13 | 2020-10-09 | 上海华力微电子有限公司 | Method for forming fluorine-free tungsten metal layer in tungsten-filled groove structure |
| CN109545741A (en) * | 2018-12-05 | 2019-03-29 | 上海华力集成电路制造有限公司 | The method of tungsten filling groove structure |
| CN113345904A (en) * | 2020-03-02 | 2021-09-03 | 圆益Ips股份有限公司 | Substrate processing method and semiconductor device manufactured by the same |
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