CN108070830B

CN108070830B - Deposition apparatus and deposition method using the same

Info

Publication number: CN108070830B
Application number: CN201711034759.1A
Authority: CN
Inventors: 孙尚佑; 申相原
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2016-11-07
Filing date: 2017-10-30
Publication date: 2021-11-23
Anticipated expiration: 2037-10-30
Also published as: CN108070830A; KR20180051693A; KR102709907B1

Abstract

The present invention relates to a deposition device capable of uniformly distributing deposition substances and a deposition method using the device. A deposition apparatus according to an embodiment of the present invention has: a cavity plate located inside the chamber; a substrate support table disposed inside the chamber so as to face the cavity plate; and a plurality of anodes rotatable The anode is arranged between the cavity plate and the substrate support table, wherein the anode has a rod shape, and a cross section perpendicular to the length direction has a rectangular shape.

Description

Deposition apparatus and deposition method using the same

Technical Field

Embodiments of the present invention relate to a deposition apparatus and a deposition method using the same, and more particularly, to a deposition apparatus and a deposition method using the same, which can uniformly distribute a deposition substance.

Background

With the development of information technology, the importance of a display device as a connection medium between a user and information has been highlighted. In response to this, the use of Display devices (Display devices) such as Liquid Crystal Display devices (Liquid Crystal Display devices) and Organic electroluminescent Display devices (Organic Light Emitting Display devices) is increasing.

The deposition apparatus is used to deposit a deposition substance onto a substrate for a semiconductor element including a liquid crystal display device and an organic electroluminescence display device.

The deposition apparatus generally deposits a predetermined substance in the following manner. First, argon (Ar) and/or oxygen (O) are included₂) The process gas of (2) is injected into the chamber in a vacuum state. Then, if a predetermined voltage is applied in the anode and the cathode, the process gas is ionized by means of plasma and collides with the target. If the ionized gas collides with the target, the deposition material is released, and the released deposition material adheres to the substrate to form a thin film.

In addition, the anode is positioned between the substrate and the target. Therefore, a portion of the deposition substance discharged from the target is blocked by the anode, and thus the deposition substance is non-uniformly deposited on the substrate.

Disclosure of Invention

Accordingly, the present invention is directed to a deposition apparatus that can uniformly distribute a deposition substance and a deposition method using the same.

A deposition apparatus according to an embodiment of the present invention has: a cavity plate located inside the cavity; a substrate support table disposed opposite to the cavity plate inside the chamber; and a plurality of anodes rotatably disposed between the cavity plate and the substrate support table, wherein the anodes have a rod shape and a cross-section perpendicular to a length direction has a rectangular shape.

The deposition apparatus according to the embodiment further has: a rotating shaft connected to the anode and having a shape extending in a longitudinal direction of the anode; and a rotating part for rotating the rotating shaft in a predetermined direction.

With the deposition apparatus according to the embodiment, the rotation axis is located at a center portion of the anode with reference to a cross section of the anode perpendicular to the length direction.

With the deposition apparatus according to the embodiment, the rotation axis is arranged apart from a central portion of the anode with reference to a cross section of the anode perpendicular to the length direction.

For a deposition apparatus according to an embodiment, the anode has: and a plurality of through holes penetrating the anode perpendicularly to the longitudinal direction.

With the deposition apparatus according to the embodiment, the through holes are arranged at the same pitch in the length direction.

The deposition apparatus according to the embodiment further has: and a protrusion protruding from a short side of the anode in a rectangular shape with reference to a cross section of the anode perpendicular to the longitudinal direction.

For a deposition apparatus according to an embodiment, the protrusion protrudes from a short side of the rectangle to have a curve.

With the deposition apparatus according to the embodiment, the anodes adjacent to each other are rotated in the same direction.

With the deposition apparatus according to the embodiment, the anodes adjacent to each other are rotated in different directions from each other.

The deposition apparatus according to the embodiment further has: a back plate fixed to the cavity plate; a target secured to the backing plate; a mask positioned between the anode and the substrate support table for allowing deposition substances released from the target to be supplied to a desired region; and a magnetron positioned at a rear surface of the back plate for generating a magnetic field.

A deposition method according to an embodiment of the present invention includes the steps of: supplying a process gas to the inside of the chamber; supplying voltages different from each other to a target located inside the chamber and a plurality of anodes rotating in a predetermined direction to form plasma; and depositing a substance released from the target by means of the plasma on a substrate, wherein the anode has a rod shape and a cross section perpendicular to a length direction has a rectangular shape.

With the deposition apparatus according to the embodiment of the present invention, the anode is arranged in a rectangular shape while being rotated in a predetermined direction. Accordingly, blocking of the deposition substance by the anode can be minimized, thereby uniformly distributing the deposition substance to the substrate.

Also, in the embodiment of the present invention, a plurality of holes are formed in the anode to allow the deposition substance to pass therethrough, whereby the uniformity of the deposition substance deposited on the substrate may be improved.

Drawings

Fig. 1 is a cross-sectional view of a deposition apparatus according to an embodiment of the present invention.

Fig. 2 is a view showing an example of the blocking part shown in fig. 1.

Fig. 3a and 3b are side sectional views illustrating an anode in the deposition apparatus shown in fig. 1.

Fig. 4 is a view showing an example of the anode shown in fig. 1.

Fig. 5a and 5b are diagrams showing the blocking of the deposition substance according to the morphology of the anode.

Fig. 6 is a view showing an example of a deposition substance deposited in the anode shown in fig. 4.

Fig. 7 is a view showing another embodiment of the anode shown in fig. 1.

Fig. 8 is a diagram showing the blockage of the deposition substance corresponding to the anode of fig. 7.

Fig. 9 is a view showing an example of a deposition substance deposited in the anode of fig. 7.

Fig. 10a and 10b are views showing the shape of the anode shown in fig. 4 and 7.

Fig. 11 is a view showing still another embodiment of the anode shown in fig. 1.

Description of the symbols

100: substrate support table 110: substrate

210: back plate 212: cavity plate

220: target 222: deposition material

230: magnetron 300: anode

302: through-hole 304: main body part

306: the protruding portion 310: rotating part

320: rotation axis 400: mask film

410: the blocking part 420: opening part

1000: chamber 1100: pump and method of operating the same

1200: power supply unit

Detailed Description

Hereinafter, embodiments of the present invention and matters necessary for those skilled in the art to easily understand the contents of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention can be realized in various forms within the scope described in the claims, and the embodiments described below are all described as examples without reference to the description thereof.

That is, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms different from each other, and when it is described in the following description that a certain portion is connected to another portion, the present invention includes not only a case of direct connection but also a case of electrical connection with another element interposed therebetween. Note that, in the drawings, the same reference numerals and symbols are given to the same constituent elements as much as possible, although they are illustrated in different drawings.

Fig. 1 is a sectional view showing a deposition apparatus according to an embodiment of the present invention.

Referring to fig. 1, a deposition apparatus according to an embodiment of the present invention has a chamber 1000, a pump 1100, and a power supply 1200.

The pump 1100 serves to discharge air inside the chamber 1000 to the outside. That is, the pump 1100 is used to maintain the chamber 1000 in a vacuum state.

The chamber 1000 is separated from the surrounding area and maintained in a vacuum state by means of the pump 1100. Inside the chamber 1000 as described above, a predetermined substance is deposited as a thin film on the substrate 110. To this end, the chamber 1000 has a substrate support table 100, a cavity Plate 212, a Backing Plate (Backing Plate)210, a target 220, an anode 300, and a mask 400.

The substrate support table 100 carries the substrate 110 into the chamber 1000 or carries it out of the chamber 1000. Also, the substrate support table 100 serves to fix the substrate 110 during a period in which a deposition substance is deposited on the substrate 110.

The target 220 represents a deposition substance intended to be deposited on the substrate 110. Here, the deposition material may include various materials that may be deposited on the substrate 110, and may include ITO, IZO, IGZO, or MoN, for example.

The backing plate 210 is disposed between the chamber 1000 and the target 220, i.e., disposed on the back side of the target 220. The backing plate 210, as described above, holds the target 220. Additionally, cooling water, not shown, flows inside the backing plate 210, thereby limiting the temperature rise of the target 220. Also, the backing plate 210 receives power supply from the power supply 1200 and supplies the supplied power to the target 220. The target 220 supplied with power from the power supply section 1200 is driven as a cathode so as to be able to form plasma.

A cavity plate 212 is arranged between the backing plate 210 and the chamber 1000, i.e., on the backside of the backing plate 210. The cavity plate 212 as described above secures the back plate 210. To this end, the cavity plate 212 may be provided to be fixed to the chamber 1000.

A plurality of anodes 300 are disposed between the target 220 and the substrate 110. The anode 300 as described above is supplied with power via the power supply portion 1200. The anode 300, which is powered, forms a plasma with the target 220 (and backing plate 210) driven to a cathode drive.

If a plasma is formed within the chamber 1000, the process gas is ionized and impinges on the target 220. By means of sputtering as described above, the deposition substance is released from the target 220, and the released deposition substance is deposited on the substrate 110.

In addition, the anode 300 has a bar shape in the embodiment of the present invention, and a cross section perpendicular to the length direction has a rectangular shape. That is, the anode 300 is formed to have a rectangular shape when viewed from the upper and side surfaces of the chamber 1000. The anode 300 is rotated in a predetermined direction, whereby plasma can be stably formed in the chamber 1000. This will be described in detail later.

The mask 400 is disposed between the anode 300 and the substrate 110. The mask 400 as described above performs control to enable the deposition substance to be supplied to a desired region (i.e., the substrate 110). For this, as shown in fig. 2, the mask 400 includes a blocking portion 410 and an opening portion 420.

The opening 420 serves as a region corresponding to the substrate 110 for passing the deposition substance directed to the substrate 110. The blocking part 410 serves to block the deposition material directed to the region other than the substrate 110. That is, the blocking portion 410 prevents deposition of deposition substances on the walls of the chamber 1000, etc.

The power supply 1200 is used to supply power to the backing plate 210 (i.e., the target 220) and the anode 300. For example, the power supply 1200 may supply a negative voltage to the back plate 210 and a positive voltage to the anode 300.

Such a power supply 1200 may supply various voltages to enable plasma formation between the target 220 and the anode 300. For example, the power supply unit 1200 may supply Direct Current (DC) or Alternating Current (AC) power.

The operation is explained as follows. The chamber 1000 is set to a vacuum state by means of the pump 1100. Then, the process gas is supplied to the chamber 1000. As the process gas, an inert gas such as argon and/or a reactive gas (reactive gas) containing oxygen, nitrogen, hydrogen, ammonia, ozone, etc. may be included.

If a process gas is supplied into the chamber 1000, an atmosphere (atmosphere) is created within the chamber 1000. Then, the power supply 1200 supplies a predetermined voltage to the target 220 (and the back plate 210) and the anode 300, and thus plasma is formed between the target 220 and the anode 300. If a plasma is formed within the chamber 1000, the process gas is ionized and impinges on the target. By means of sputtering (sputtering) as described above, the deposition substance is released from the target, and the released deposition substance is deposited on the substrate 110. The deposition apparatus according to an embodiment of the present invention repeats the above process, thereby forming a deposition substance on the substrate 110.

In addition, the deposition apparatus according to an embodiment of the present invention may further include a magnetron 230 positioned at the rear surface of the back plate 210. The magnetron 230 forms a magnetic field so that the motion of ions generated by the plasma is confined around the target 220 and the moving path is extended, so that the sputtering efficiency can be improved.

Referring to fig. 3a and 3b, the anode 300 is disposed inside the chamber 1000 and rotatably provided by means of a rotating shaft 320. That is, the anodes 300 are connected to the different rotation shafts 320. The rotation shaft 320 has a shape extending along the length direction of the anode 300.

The rotation shaft 320 is rotated in a predetermined direction and at a predetermined speed by the rotation part 310 located outside the chamber 1000. Therefore, the rotating part 310 may include a motor, not shown, and the like.

As shown in fig. 3a, the anodes 300 adjacent to each other may be rotated in the same direction by means of the rotating part 310. Also, the anodes 300 adjacent to each other may be rotated in different directions from each other as shown in fig. 3b by the rotating part 310. The rotation direction and rotation speed of the anode 300 may be determined experimentally in consideration of deposition uniformity, etc.

Fig. 4 is a view showing an example of the anode shown in fig. 1.

Referring to fig. 4, in the embodiment of the present invention, for the anode 300, a section perpendicular to the length direction has a rectangular shape, and is rotated in a predetermined direction by means of the rotation shaft 320. Here, the rotation axis 320 is located at the center with reference to a cross section of the anode 300 perpendicular to the longitudinal direction.

Additionally, if the anode 300 is formed in a rectangular shape, the amount of deposition material blocked by the anode 300 may be minimized.

As an example, as shown in fig. 5a, when the anodes are arranged in a circle, the deposition substance is blocked by the anodes, and thus the deposition substance may not be uniformly deposited on the substrate 110.

In contrast, as shown in fig. 5b, when the anode 300 has a rectangular shape with a section perpendicular to the length direction as a reference and is rotated in a predetermined direction at the same time, the amount of the deposition material blocked by the anode 300 is minimized. In this case, the deposition substance may be uniformly deposited on the substrate 110.

Additionally, only three anodes of the plurality of anodes are illustrated in fig. 5a and 5b for ease of illustration. Also, it is illustrated in fig. 5b that the anodes 300 have the same angle with each other, however, the present invention is not limited thereto. As an example, the rotation direction and the rotation speed of the anode 300 may be experimentally determined to uniformly deposit the deposition substance on the substrate 110.

In addition, the anode 300 is rotated in a predetermined direction, and thus the rotation area of the anode 300 is set to the dotted line region as shown in fig. 4. That is, the rotating area of the anode 300 is set to be a circular area wider than a rectangle according to the rotation of the anode 300, thereby stably forming plasma in the chamber 1000.

Referring to fig. 6, the anode 300 according to the embodiment of the present invention is rotated in a predetermined direction, and thus the deposition substance 222 is deposited on both sides of the anode 300. For example, the deposition material 222 may be deposited on both long sides of the anode 300 in a rectangular shape (the deposition material 222 may be deposited on the short sides corresponding to the length of the short sides of the rectangular shape). In the case where the deposition substance 222 is deposited on both sides of the anode 300 as described above, stress applied to the anode 300 due to the deposition substance 222 is minimized.

As an example, when the anode 300 is not rotated, the deposition substance 222 is deposited only on one side of the anode 300. In this case, stress caused by the deposition substance 222 is accumulated, thereby possibly bending the anode 300.

Fig. 7 is a view showing another embodiment of the anode shown in fig. 1.

Referring to fig. 7, in another embodiment of the present invention, with respect to an anode 300 ', a section perpendicular to a length direction has a rectangular shape, and is rotated in a predetermined direction by means of a rotation shaft 320'. The rotation shaft 320' is disposed apart from the center of the anode with reference to a cross section perpendicular to the longitudinal direction. For example, the rotation shaft 320 'may be disposed adjacent to one of two short sides of the rectangular anode 300'.

In the case where the anode 300 ' is disposed in a rectangular shape with reference to a cross section perpendicular to the longitudinal direction, and the rotation shaft 320 ' is disposed apart from the center portion of the anode with reference to a cross section perpendicular to the longitudinal direction, the amount of the deposition material blocked by the anode 300 ' is minimized.

That is, when the anode 300 'is arranged in a rectangular shape while the rotation axis 320' is positioned at one side end of the anode 300 ', as shown in fig. 8, the amount of the deposition material blocked by the anode 300' is minimized. In this case, the deposition substance may be uniformly deposited on the substrate 110.

In fig. 8, only three anodes 300' of the plurality of anodes are illustrated for ease of illustration. Also, in fig. 8, the anodes 300' are illustrated as having the same angle with each other, however, the present invention is not limited thereto. As an example, the rotation direction and the rotation speed of the anode 300' may be experimentally determined to uniformly deposit the deposition substance on the substrate 110.

Additionally, the anode 300 'is rotated in a predetermined direction, and thus the rotation area of the anode 300' is set to the dotted line region as shown in fig. 7. That is, the rotating area of the anode 300 'is set to a circular area wider than the rectangular area according to the rotation of the anode 300', whereby plasma can be stably formed in the chamber 1000.

In another embodiment of the present invention, the rotation axis 320 'is located at one end of the anode 300', and thus can have the same rotation area with about half the size of the anode 300 of fig. 4. In an embodiment of the present invention, the size of the anode 300 'and the position of the rotation axis 320' may be experimentally determined to stabilize the plasma formation.

Referring to fig. 9, the anode 300 'according to another embodiment of the present invention is rotated in a predetermined direction, and thus the deposition substance 222 is deposited on both sides of the anode 300'. For example, the deposition material 222 may be deposited on both long sides of the anode 300' having a rectangular shape (the deposition material 222 may be deposited on the short sides corresponding to the length of the short sides of the rectangular shape). In the case where the deposition substance 222 is deposited on both sides of the anode 300 'as described above, stress applied to the anode 300' due to the deposition substance 222 is minimized.

Referring to fig. 10a, in the embodiment of the present invention, anodes 300, 300' in a rectangular form (i.e., a rectangular bar shape) are positioned between the upper and lower sides of a chamber 1000 with reference to a section perpendicular to the length direction. The anode 300, 300' as described above is rotated in a one-sided direction. Thus, as described above, the anode 300, 300' can minimize the amount of blocking of the deposition substance directed from the target 220 to the substrate 110 side.

Referring to fig. 10b, in another embodiment of the present invention, the anode 300, 300' in a rectangular shape is positioned between the upper and lower sides of the chamber 1000 with reference to a cross section perpendicular to the length direction. The anodes 300 and 300 'described above are provided with a plurality of through holes 302 that penetrate the anodes 300 and 300' perpendicularly to the longitudinal direction. The through-holes 302 as described above are used to pass the deposition substance directed from the target 220 to the substrate 110 side, whereby the uniformity of the deposition substance deposited on the substrate 110 can be ensured.

In the above description, the anodes 300 and 300' are described as being rectangular with reference to a cross section perpendicular to the longitudinal direction, but the present invention is not limited thereto. As an example, the anodes 300, 300' may be set in various forms to minimize the blocking amount of the deposition substance directed from the target 220 to the substrate 110 side.

For example, as shown in fig. 11, the anode 300, 300' may have a rectangular main body 304 and a protrusion 306 protruding from a short side of the main body 304, with reference to a cross section perpendicular to the longitudinal direction. The protruding portion 306 protrudes from the main body portion 304 to have a curved line.

Here, if the protrusion 306 is formed in a circular arc shape on the short side of the body portion 304, the deposition substance 222 can be prevented from being deposited on the protrusion 306. In this case, the rotation area of the anodes 300 and 300' can be constantly maintained, whereby the reliability of driving can be ensured.

While the technical idea of the present invention is specifically described based on the above preferred embodiments, the above embodiments are intended to be illustrative and not limiting, and it should be noted that. It should be understood that a person having basic knowledge in the technical field of the present invention can realize various modifications within the scope of the technical idea of the present invention.

The scope of the invention is defined by the appended claims, and is not limited to the description of the claims, which are intended to cover all modifications and changes that fall within the meaning and range of equivalency of the claims.

Claims

1. a deposition apparatus, is characterized in that, has:

A cavity plate, located inside the chamber, for fixing the target;

a substrate support table disposed inside the chamber to oppose the cavity plate; and

a plurality of anodes rotatably disposed between the target and the substrate support table,

Wherein, the anode has a rod shape, and the cross section perpendicular to the length direction has a rectangular shape.

2. The deposition apparatus of claim 1, further comprising:

a rotating shaft connected to the anode and having a shape extending along the length of the anode; and

a rotating part for rotating the rotating shaft in a predetermined direction.

3 . The deposition apparatus according to claim 2 , wherein the axis of rotation is located at a center portion of the anode with reference to a cross-section of the anode perpendicular to the longitudinal direction. 4 .

4 . The deposition apparatus according to claim 2 , wherein the rotation shaft is arranged to be spaced apart from a central portion of the anode with reference to a cross-section of the anode perpendicular to the longitudinal direction. 5 .

5. The deposition apparatus of claim 1, wherein the anode has:

A plurality of through holes penetrate the anode in a manner perpendicular to the longitudinal direction.

6 . The deposition apparatus of claim 5 , wherein the through holes are arranged at the same pitch along the length direction. 7 .

7. The deposition apparatus of claim 1, further comprising:

The protruding portion protrudes from the short side of the rectangle of the anode on the basis of the cross section of the anode perpendicular to the longitudinal direction.

8 . The deposition apparatus according to claim 7 , wherein the protruding portion protrudes from the short side of the rectangle in a curved manner. 9 .

9. The deposition apparatus of claim 1, wherein the anodes adjacent to each other rotate in the same direction.

10. The deposition apparatus of claim 1, wherein the anodes adjacent to each other rotate in different directions from each other.

11. The deposition apparatus of claim 1, further comprising:

a back plate, fixed on the cavity plate;

The target is fixed on the back plate;

a mask positioned between the anode and the substrate support table for enabling deposition species released from the target to be supplied to a desired area; and

A magnetron, located on the back of the back plate, is used to generate a magnetic field.

12. A deposition method, characterized in that, comprising the steps of:

supplying process gas to the interior of the chamber;

supplying mutually different voltages to a target located inside the chamber and a plurality of anodes that rotate in a predetermined direction to form plasma; and

depositing species released from the target by means of the plasma on the substrate,

Wherein, the anode is rotatably disposed between the target and the substrate, has a rod shape, and has a rectangular shape in cross section perpendicular to the longitudinal direction.

13. The deposition method of claim 12, wherein the anodes adjacent to each other are rotated in the same direction.

14. The deposition method of claim 12, wherein the anodes adjacent to each other rotate in mutually different directions.