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CN108028179A - Method for depositing conformal BCN films - Google Patents

Method for depositing conformal BCN films Download PDF

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Publication number
CN108028179A
CN108028179A CN201680054333.XA CN201680054333A CN108028179A CN 108028179 A CN108028179 A CN 108028179A CN 201680054333 A CN201680054333 A CN 201680054333A CN 108028179 A CN108028179 A CN 108028179A
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Prior art keywords
boron
film
processing method
borine
predecessor
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CN201680054333.XA
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Chinese (zh)
Inventor
程睿
A·B·玛里克
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Applied Materials Inc
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Applied Materials Inc
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Priority to CN202311137299.0A priority Critical patent/CN117165927A/en
Publication of CN108028179A publication Critical patent/CN108028179A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer

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Abstract

For by the way that substrate surface is formed the method for carbonization boron film on the surface of the substrate exposed to borine predecessor.Carbonization boron film optionally includes nitrogen and/or hydrogen.Carbonization boron film can be deposited on the surface for containing substantially no boron.Borine predecessor can include having general formula NHR2BH3Compound, wherein each R is independently selected from the group consisted of：Hydrogen, C1 C10 alkyl, C1 C10 alkenyls and aryl.

Description

Method for depositing conformal BCN films
Technical field
Embodiment of the present disclosure relates in general to the method to form carbonization boron film.More specifically, embodiment of the present disclosure It is related to the method to form carbonization boron film, boron carbonitrides film and/or boron nitride film.
Background technology
Due to strong covalent bond, element boron, carbon and nitrogen can form the B-C-N materials with many useful qualities.For example, Material may be formed to have high rigidity, high-temperature stability, reactive ion etching (the reactive ion etching of enhancing； RIE) selectivity and/or the solvent etchant resistance of enhancing.What people will strive to focuses on diamond-like-carbon (diamond-like carbon；DLC) on film, carbonization boron film and boron nitride film.Also it has been absorbed in the ternary of such as BCN Compound is studied.
Common process uses high temperature chemical vapor deposition (the chemical vapor at a temperature of greater than about 550 DEG C deposition；CVD) or plasma enhanced CVD is used.However, high temperature limits the application of this film, and due to etc. from The distribution of daughter, corona treatment reduce the conformality of film.
Therefore, need to form the film with good conformality and etching selectivity at low temperature in the art Method.
The content of the invention
One or more embodiments of the disclosure are related to processing method, the treating method comprises at about 300 DEG C to about 550 At temperature in DEG C scope in the processing chamber by the substrate surface for containing substantially no boron exposed to borine predecessor to be formed Be carbonized boron film.
The Additional embodiments of the disclosure are related to processing method, the treating method comprises and are placed in the substrate with surface In processing chamber housing.The surface of substrate is exposed to borine predecessor to be formed at temperature in about 300 DEG C to about 550 DEG C scopes Be carbonized boron film.Borine predecessor includes having general formula NHR2BH3Compound, wherein each R is independently from the group consisted of Selected in group：Hydrogen, C1-C10 alkyl, C1-C10 alkenyls and aryl, condition include carbon atom at least one of R group.
The further embodiments of the disclosure are related to processing method, the treating method comprises with containing substantially no boron The substrate on surface be placed in processing chamber housing.The surface has at least one feature on it.At about 300 DEG C to about 550 At temperature in DEG C scope, the surface of substrate conformal is covered firmly exposed to borine predecessor and optional co-reactant with being formed Mould, the conformal hard mask include the carbonization boron film at least one feature.Borine predecessor includes NH (CH3)2BH3.Coreaction Thing is selected from the group consisted of：Hydrogen, B2H6、CH4、C2H2、C3H6、NH3And combinations of the above.
Embodiment
As used in this specification and following claims, term " substrate " and " chip " are interchangeably used, Both the part on surface that technique acts on it or surface is referred to.It will further be appreciated by those of ordinary skill in the art that unless context is another Explicitly point out outside, the otherwise reference to substrate may also only refer to a part for substrate.
Through this specification to " embodiment ", " certain embodiments ", " various embodiments ", " one or more The reference of embodiment " or " embodiment " means to contact special characteristic, structure, material or the characteristic of embodiment description It can be included at least one embodiment of the disclosure.In addition, such as " in one or more embodiments ", " some In embodiment ", the phrase of " in one embodiment " or " in one embodiment " etc in entire disclosure everywhere There is the same embodiment for not necessarily referring to the disclosure.In addition, the special characteristic, structure, material or characteristic can be one or more It is combined in any suitable manner in a embodiment.
As used in this specification and following claims, term " substrate " and " chip " are interchangeably used, Both refer both to the material sheet of the part on the surface or surface that there is technique to act on it.Those skilled in the art will also reason Solution, unless the context clearly indicates otherwise, the otherwise reference to substrate may also only refer to a part for substrate.In addition, in base The reference deposited on plate can refer to naked substrate and with both deposition or one or more films formed or the substrate of feature on it.
The material surface that " substrate surface " refers to the exposure of any substrate or formed on substrate as used herein, In process for making film process is performed in the exposure or the material surface.For example, it can perform processing on it Substrate surface includes following material, such as silicon, silica, strained silicon, silicon-on-insulator (SOI), carbon doping oxygen according to application SiClx, silicon nitride, carborundum, doped silicon, germanium, GaAs, glass, sapphire, and any other materials, such as metal, gold Belong to nitride, metal carbides, metal alloy, and other conductive materials.Substrate includes but not limited to semiconductor and insulation is brilliant Piece, it may may not produce or after further treatment electronics and/or opto-electronic device.Substrate can be exposed to pretreatment Technique is cleaning, grinding, etching, reducing, aoxidizing, hydroxylating, annealing and/or baking substrate surface.Except directly in substrate sheet Outside film process on the surface of body, in embodiment of the present disclosure, the either step of disclosed film process step also can be Performed in the lower floor formed on substrate, what following article was disclosed more closely in, and term " substrate surface " is predetermined to include as upper and lower This lower floor's (one or more) that text is pointed out, such as run through the through hole of thin semiconductor layer and/or insulating layer on the soi wafer.
Can be any appropriate substrate with the substrate that embodiment of the present disclosure is used together.In some embodiments, Substrate is rigid, discrete, rough flat substrate.As used in this specification and following claims, when drawing During with substrate, term " discrete " means that substrate has fixed dimension.The substrate of one or more embodiments is semiconductor substrate, Such as 200 millimeters or the silicon substrate of 300 mm dias.In some embodiments, substrate is silicon, SiGe, GaAs, nitridation One or more of gallium, germanium, gallium phosphide, indium phosphide, sapphire and carborundum.
Some embodiments of the disclosure are advantageously provided forms carbonization boron film on the substrate surface of no boracic lower floor Method.In some embodiments, substrate surface contains substantially no boron.As middle use, term " do not have generally in this regard Have boron " mean to aboutThere is on atomic basis less than about 1% boron atom on the surface of depth.In some embodiments In, substrate surface is substantially made of silicon, carbon and oxygen atom.Such as middle use in this regard, term is " substantially by silicon, carbon and oxygen Atom forms " it is meant that to aboutThe substrate surface of depth, which amounts to, to be included greater than or equal to about 99% silicon atom, carbon atom and oxygen Atom.In some embodiments, substrate surface is substantially made of silicon, carbon, hydrogen and oxygen atom.Such as middle use in this regard, Term " being substantially made of silicon, carbon, hydrogen and oxygen atom " is it is meant that to aboutThe substrate surface of depth, which amounts to include, to be more than or waits In about 99% silicon atom, carbon atom, hydrogen atom and oxygen atom.
Embodiment of the present disclosure is related to the technique of depositing silicon boron film, boron carbonitrides film and similar film.The disclosure Some embodiments the film that is formed at relatively low temperature is provided, so as to allow to retain heat budget during device is formed.This public affairs Some embodiments opened provide the film with the excellent conformity greater than or equal to about 98%.
Some embodiments of the disclosure are related to processing method, and wherein substrate surface is exposed to borine predecessor at low temperature To form the boron film that is carbonized.As used in this specification and following claims, term " boron carbide " refer to comprising boron and The film of carbon.In some embodiments, carbonization boron film is substantially made of boron and carbon, it is meant that boron and carbon constitute film at least About 80 atomic percents.Carbonization boron film can include nitrogen and/or hydrogen.In some embodiments, boron film is carbonized substantially by boron Atom, carbon atom and optionally hydrogen atom form.
In some embodiments, the boron film that is carbonized is boron carbonitrides film.Such as in this specification and following claims Used, term " boron carbonitrides " refers to the film for including boron, carbon and nitrogen.In some embodiments, boron carbonitrides film is substantially It is made of boron, carbon and nitrogen, it is meant that boron, carbon and nitrogen constitute at least about 80 atomic percents of film.In some embodiments, Boron carbonitrides film is substantially by boron atom, carbon atom, nitrogen-atoms and optionally hydrogen atom forms.
In some embodiments, the boron film that is carbonized is included except boron, carbon and the hydrogen optionally in addition to nitrogen.The hydrogen content of film can It is up to about 20 atomic percents, 15 atomic percents, 10 atomic percents, 5 atomic percents or 2 atomic percents.
Borine predecessor can include any appropriate borane compound that can be decomposed at a temperature of below about 550 DEG C. In some embodiments, borine predecessor, which includes, has general formula NHR2BH3Compound.In some embodiments, each R Group is independently selected from the group consisted of：Hydrogen, C1-C10 alkyl, C1-C10 alkenyls and aryl.At one or more In embodiment, at least one of R group includes carbon atom.In some embodiments, borine predecessor includes NH (CH3)2BH3.In one or more embodiments, borine predecessor, which includes, has general formula NHR2BH3Compound, wherein each R group Independently selected from the group consisted of：C1-C10 alkyl, C1-C10 alkenyls and aryl, so as to former with nitrogen is bonded to One hydrogen atom of son.In some embodiments, borine predecessor has general formula NHR2BH3, wherein R is from consisting of Selected in group：C1-C10 alkyl, C1-C10 alkenyls and aryl, so as to two hydrogen atoms for being bonded to nitrogen-atoms.
In some embodiments, the temperature of carbonization boron film is formed in about 300 DEG C to about 550 DEG C of scope to form carbon Change boron film.In one or more embodiments, the temperature for forming carbonization boron film less than or equal to about 550 DEG C or is less than or waits In about 525 DEG C or less than or equal to about 500 DEG C or less than or equal to about 475 DEG C or less than or equal to about 450 DEG C, Or less than or equal to about 425 DEG C or less than or equal to about 400 DEG C.
When in use, substrate be placed in processing chamber housing and borine predecessor flow into processing chamber housing with substrate surface Reaction.In some embodiments, borine predecessor is flowed into processing chamber housing with or without carrier gas.As made in this regard With carrier gas is the gas not reacted with borine predecessor or substrate surface.
The carbonization boron film of some embodiments is formed by the thermal decomposition of borine predecessor.In one or more embodiments In, the temperature of substrate surface is raised, and relatively cool borine predecessor is flowed into processing chamber housing.Borine predecessor is opposite Decomposed on the substrate surface of heat to form carbonization boron film.In one or more embodiments, thermally decompose in no catalyst or wait Gas ions occur in the case of strengthening.
In some embodiments, borine predecessor is flowed into processing chamber housing together with co-reactant.Co-reactant from by Selected in the group of consisting of：Hydrogen, B2H6、CH4、C2H2、C3H6、NH3And Combinations of the above.In some embodiments, Co-reactant increase boron, carbon, nitrogen or hydrogen one or more in the atomic percent being carbonized in boron film.Co-reactant can flow into Mix with borine predecessor or mixed in processing chamber housing with borine predecessor before processing chamber housing.
In some embodiments, borine predecessor is exposed to plasma to form carbonization boron film in the processing chamber. Plasma can be the direct plasma lighted close to substrate surface in processing chamber housing, or can be to be lighted outside processing chamber housing And flow into the remote plasma in the processing region on adjacent substrates surface.In some embodiments, plasma include hydrogen, One or more of nitrogen, helium and/or argon.In some embodiments, be carbonized boron film in the case of no plasma conformally Formed on the surface of the substrate.
In the forming for film of whole thickness it is substantially by the carbonization boron film that one or more embodiments of the disclosure are formed It is upper uniform.Such as middle use in this regard, the substantial uniform atom composition for meaning the film at the top of film of term and close film The atom composition of bottom and middle film is about the same.Those skilled in the art will be understood that, due to such as atomic migration, base Plate surface and carbonization boron film between interface and carbonization boron film and film at the top of on any component between interface may have with The slightly different composition in the block part of film.
In some embodiments, substrate surface includes at least one feature on it.Such as in this specification and enclose " feature " used in claims refers to any non-flat parts of substrate.For example, feature can be groove or spike.Feature Generally include at least one " vertical " surface and top or bottom " level " surface.Vertical surface is into about 70 with substrate surface The surface of angle extension in ゜ to about 110 ゜ scopes, wherein surface normal measure at 90 ゜.Horizontal surface is the method with substrate Line into about 0 ゜ to about 20 ゜ scopes in angle extension surface.
In one or more embodiments, carbonization boron film is conformally formed at least one feature.As used herein, Term " conformal " or " conformally " refer to be adhered to and uniform fold have a thickness exposed surface layer, the thickness is opposite There is the change less than 1% in the average thickness of film.For example,Thick film will have on thickness to be less thanChange. This thickness and change include edge, corner, side and the bottom of recess.For example, pass through in the various embodiments of the disclosure The conforma layer of ALD deposition is by the deposition region covering provided above with substantially uniform thickness on complex surface.
As used herein, term " continuous " refers to cover whole exposed surface without exposing the material below sedimentary Gap or bare spots layer.Pantostrat may have gap or bare spots, and the gap or bare spots are having less than about 1% The surface area of the total surface area of film.
The carbonization boron film of some embodiments is to being generally transparent in the light of predetermined wavelength.Such as this specification and with Used in attached claims, term " substantially transparent " mean film adsorb less than about 10% or 5% in predetermined wavelength Light.Predetermined wavelength can be to any appropriate optical wavelength with any membrane interaction formed under carbonization boron film.
In some embodiments, carbonization boron film is formed as hard mask and anti-etching.Such as in this specification and the power of enclosing Used in sharp claim, term " anti-etching " mean film have more than 100 by the SiO of reactive ion etching (RIE) or A-Si dry etchings selectivity or with being less than aboutThe wet etch rate in HF is diluted.
In some embodiments, method is further included using the light with a wavelength to irradiate base through carbonization boron film Plate surface, carbonization boron film is generally transparent for the light of the wavelength.In one or more embodiments, method is further Hard mask is removed after the substrate surface under irradiation carbonization boron film.
Example
Boron carbonitrides (B-C-N) film is by using dimethylamine borane [NH (CH3)2BH3] (DMAB) hot CVD technique and sink Product.DMAB is heated to increase steam pressure in hot tank and is delivered to processing chamber housing using ultra-high purity (UHP) Ar carrier gas. The scope of hot tank temperature is from room temperature to about 150 DEG C.The scope of argon carrier gas flux is from 100sccm to 20000sccm.In order to control B- The element composition of C-N films, by NH3、H2、C3H6Co-reactant gas is delivered to CVD chamber.The scope of chamber temp from 300 DEG C to 550℃.The scope of process chamber pressure is from 100mTorr to 100Torr.B-C-N films deposit on silicon.
The film character of B-C-N films is characterized with ellipsometer, XPS and/or RBS/HFS.The Rl/633nm of film is 2.2 and K/ 633nm is 0.0087.Composition analysis shows, the scope of boron concentration is on atomic basis from 35% to 60%.The scope of concentration of carbon From 8% to 37% on atomic basis.The scope of nitrogen concentration is on atomic basis from 9% to 42%.The FTIR of boron carbonitrides film Spectrum shows there is B-B, B-C, B-N, B-H key in film.
In the case of the theoretical constraint from any particular job, it is believed that DMAB decomposed first in substrate wafer and Produce BH3And DMA.BH3Reacted with Si and form Si-B keys.Remaining B-H keys react with B, C and N species and form B-B, B- C and C-N keys.Table 1 lists the etch-rate (etch-rate for being normalized to hard mask) of the layer below hard mask.
Table 1.
As can be seen from Table 1, the opposite etch-rate of boronation silicon fiml is more than the opposite of non-crystalline silicon, silica or silicon nitride film Etch-rate.
, also can be in the feelings for the base region for not departing from the present invention although the above is directed to embodiments of the present invention Other and the further embodiment of the present invention is designed under condition, and the scope of the present invention is determined by appended claims.

Claims (15)

1. a kind of processing method, including：In the processing chamber by substrate table at temperature in about 300 DEG C to about 550 DEG C scopes Face is exposed to borine predecessor to form carbonization boron film, wherein the substrate surface contains substantially no boron.
2. a kind of processing method, including：
Substrate with surface is placed in processing chamber housing；
The surface of the substrate is exposed to borine predecessor with shape at temperature in about 300 DEG C to about 550 DEG C scopes Into carbonization boron film, the borine predecessor, which includes, has general formula NHR2BH3Compound, wherein each R is independently from by with the following group Into group in select：Hydrogen, C1-C10 alkyl, C1-C10 alkenyls and aryl, condition are at least one former comprising carbon of R group Son.
3. processing method as claimed in claim 1, wherein the borine predecessor, which includes, has general formula NHR2BH3Compound, Wherein each R is independently selected from the group consisted of：Hydrogen, C1-C10 alkyl, C1-C10 alkenyls and aryl.
4. at least one of processing method as claimed in claim 3, wherein R group includes carbon atom.
5. processing method according to any one of claims 1 to 4, wherein the boron carbide film is substantially by boron atom, carbon Atom, and optionally hydrogen atom forms.
6. processing method according to any one of claims 1 to 4, wherein the borine predecessor includes NH (CH3)2BH3。
7. processing method as claimed in claim 6, wherein the boron carbide film is substantially by boron atom, carbon atom, nitrogen-atoms, And optionally hydrogen atom forms.
8. processing method according to any one of claims 1 to 4, wherein the borine predecessor is common together with co-reactant With flowing into the processing chamber housing, the co-reactant is selected from the group consisted of：Hydrogen, B2H6、CH4、C2H2、 C3H6、NH3And Combinations of the above.
9. processing method as claimed in claim 8, wherein the co-reactant increase hydrogen, carbon or nitrogen one or more in institute State the atomic percent in carbonization boron film.
10. processing method according to any one of claims 1 to 4, wherein the borine predecessor is sudden and violent in the processing chamber Plasma is exposed to form the carbonization boron film, the plasma includes one or more of hydrogen, nitrogen, helium or argon.
11. processing method according to any one of claims 1 to 4, wherein the substrate surface includes silicon.
12. processing method according to any one of claims 1 to 4, wherein the substrate surface includes on it at least One feature and the carbonization boron film are conformally formed at least one feature.
13. processing method according to any one of claims 1 to 4, wherein the boron carbide film is to the light in predetermined wavelength Generally it is transparent.
14. processing method as claimed in claim 13, wherein the boron carbide film is formed as hard mask and anti-etching, and The method further includes：The substrate surface is irradiated through the carbonization boron film using the light of the predetermined wavelength, with And remove the hard mask.
15. a kind of processing method, including：
Substrate with surface is placed in processing chamber housing, the surface has at least one feature on it and generally Not comprising boron；
The surface of the substrate exposed to borine predecessor and is appointed at temperature in about 300 DEG C to about 550 DEG C scopes For the co-reactant of choosing to form conformal hard mask, the conformal hard mask includes the carbonization boron film at least one feature, The borine predecessor includes NH (CH3)2BH3, the co-reactant selects from the group consisted of：Hydrogen, B2H6、CH4、 C2H2、C3H6、NH3And Combinations of the above.
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