CN107993746A - A kind of nesa coating and the electronic device based on it - Google Patents
A kind of nesa coating and the electronic device based on it Download PDFInfo
- Publication number
- CN107993746A CN107993746A CN201711163213.6A CN201711163213A CN107993746A CN 107993746 A CN107993746 A CN 107993746A CN 201711163213 A CN201711163213 A CN 201711163213A CN 107993746 A CN107993746 A CN 107993746A
- Authority
- CN
- China
- Prior art keywords
- layer
- nesa coating
- layers
- metal
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Laminated Bodies (AREA)
Abstract
The present invention provides a kind of nesa coating; the nesa coating includes transparent base, the first transparency dielectric layer, aqueous vapor separation layer, metal alloy layer, the second transparency dielectric layer and the anti-reflection protective layer being stacked from lower to upper; the material of the aqueous vapor separation layer is at least one of metal, metal nitride or metal oxide, and the anti-reflection protective layer is forming low-refractive-index layer.Transparent conductive film layer provided by the invention adds the aqueous vapor separation layer formed with metal, metal nitride or metal oxide on the basis of former sandwich structure between dielectric layer and metal alloy layer; anti-reflection protective layer is added on the second transparency dielectric layer; increase the transmitance of product; with preferable water vapor rejection effect; make product that there is good inoxidizability, improve the service life of product.
Description
Technical field
The present invention relates to hyaline membrane field, more particularly to a kind of nesa coating and the electronic device based on it.
Background technology
In recent years, with the development that semiconductor fabrication and photovoltaic technology are advanced by leaps and bounds, such as flat-panel screens, touch-control
The technologies such as screen, fenestrated membrane, polymer dispersed liquid crystals, solar cell develop rapidly and perfect, these new technologies are required for using
Bright conducting film is as electrode, smooth surface or Electro-Magnetic pulse Shielding film.By taking touch screen as an example, common several types in touch screen
As resistance type touch control screen, surface capacitance type touch screen, inductance capacitance formula touch screen are required for being used as electrode by the use of nesa coating
Material.
The definition that nesa coating is generally acknowledged has relatively low resistivity to be transparent in visible-range.At present
Common nesa coating has ITO (tin indium oxide) film, AZO (Al-Doped ZnO) films and alundum (Al2O3) etc..
Find by literature search, M.Bender and W.Seelig in 1998 et al. exists《Thin SolidFilms》326th
(1998) " Dependence of filmcomposition and thickness on optical and are write articles on 67-71
Electrical properties of ITO-metal-ITO multilayers (ITO- metal-ITO multilayer film photoelectric properties
With the relation of its thickness and composition) ", which goes out ITO/AG/ITO (I/M/I) multilayer film and substitutes single ito film, attempts to obtain
Obtain more preferable electric conductivity and lower cost.But the photoelectric properties of this sandwich structure could not reach the desired value of people.
A seminar of Shanghai Communications University proposes the sandwich structure of dielectric layer/metal layer/dielectric layer afterwards, has good
Good electric conductivity and relatively low resistance.It is easy to fall off on flexible base ability PET but the film of this structure still has thicker thickness,
Adhesion is poor, and exposure is in atmosphere, and tissue is unstable, and oxidation resistance is poor and weatherability test 500h is poor.
The content of the invention
It is an object of the invention to for above-mentioned problem and shortage, there is provided a kind of nesa coating and based on its
Electronic device, to solve the above problems.
The technical proposal of the invention is realized in this way：
One aspect of the present invention discloses a kind of nesa coating, and the nesa coating includes being stacked from lower to upper saturating
Bright base material, the first transparency dielectric layer, aqueous vapor separation layer, metal alloy layer, the second transparency dielectric layer and anti-reflection protective layer, institute
The material for stating aqueous vapor separation layer is at least one of metal, metal nitride or metal oxide, and the anti-reflection protective layer is
Forming low-refractive-index layer.
Preferably, the material of the aqueous vapor separation layer for Ti, Ni, Cr, NiCr, TiN, ZnO, TiO2, SnO2, SiO2,
At least one of Nb2O5, Ta2O5, Si3N4.
Preferably, the material of the anti-reflection protective layer is at least one of MgF2, SiO2, ice crystal.
Preferably, first transparency dielectric layer is independently selected from following material with second transparency dielectric layer
Material：
In at least one of metal oxide, nitride, sulfide or the metal oxide, nitride, sulfide
At least one dopant.
Preferably, the metal alloy layer is Ag alloy-layers or Cu alloy-layers, and the ratio of Ag is not small in the Ag alloy-layers
The ratio of Cu is not less than 80% in 80%, the Cu alloy-layers.
Preferably, the thickness of the transparent base is 0.01~1mm, first transparency dielectric layer and described second saturating
The thickness of bright dielectric layer is independently selected from 10~100nm, and the thickness of the aqueous vapor separation layer is 0.1~20nm, described
The thickness of metal alloy layer is 5~20nm, and the thickness of the anti-reflection protective layer is 1~20nm.
Preferably, transmissivity of the nesa coating in visible-range is more than 70% and resistance value is less than 300 Ω.
Preferably, transmissivity of the nesa coating in visible-range is not less than 80%, the nesa coating
Sheet resistance no more than 15 Ω and under the conditions of 85 DEG C of 240h temperature, humidity 85%RH weatherability test meet that resistance value and transmitance become
Rate ratio is not more than 1.2.
Preferably, the nesa coating include be stacked from lower to upper Nb2O5 layers, Si3N4 layers, Ag alloy-layers,
ITO layer and SiO2 layers.
Preferably, Nb2O5 layers described, Si3N4 layers, Ag alloy-layers, ITO layer and SiO2 layers of thickness be respectively 30nm,
5nm, 12nm, 45nm and 5nm.
Another aspect of the present invention additionally provides a kind of electronic device, including as above any one of them nesa coating
Beneficial effect：
Transparent conductive film layer provided by the invention on the basis of former sandwich structure dielectric layer and metal alloy layer it
Between add the aqueous vapor separation layer formed with metal, metal nitride or metal oxide, increase on the second transparency dielectric layer
Anti-reflection protective layer is added, has increased the transmitance of product, there is preferable water vapor rejection effect, there is product anti-oxidant well
Property, improves the service life of product.
Brief description of the drawings
The accompanying drawings which form a part of this application are used for providing a further understanding of the present invention, and of the invention shows
Meaning property embodiment and its explanation are used to explain the present invention, do not form inappropriate limitation of the present invention, in the accompanying drawings：
Fig. 1 is the structure diagram of the present invention；
Fig. 2 is specific embodiment of the invention structure diagram.
Embodiment
It should be noted that in the case where there is no conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.Describe the application in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " bag
Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
For the ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be appreciated that spatially relative term is intended to comprising the orientation except device described in figure
Outside different azimuth in use or operation.For example, if the device in attached drawing is squeezed, it is described as " in other devices
It will be positioned as " under other devices or construction after the device of part or construction top " or " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " can include " ... top " and
" in ... lower section " two kinds of orientation.The device can also other different modes positioning (being rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
The present invention provides a kind of nesa coating.As shown in Figure 1, the nesa coating includes being stacked from lower to upper
Transparent base 11, the first transparency dielectric layer 12, aqueous vapor separation layer 13, metal alloy layer 14, the second transparency dielectric layer 15
With anti-reflection protective layer 16, the material of the aqueous vapor separation layer 13 is at least one in metal, metal nitride or metal oxide
Kind, the anti-reflection protective layer 16 is forming low-refractive-index layer.
Wherein, the first transparency dielectric layer 12 and the second transparency dielectric layer 15 act as improve optical property, reduce
Resistance；Aqueous vapor separation layer 13 is used to obstruct steam and carries out anti-oxidation protection；Metal alloy layer 14 is used to reduce resistance value；Anti-reflection guarantor
Sheath 16 act as increase product transmitance and anti-oxidation protection.
In nesa coating provided by the invention, base material can use a variety of carriers that can transmit visible ray, such as glass or
Flexible clear materials etc.；Wherein flexible clear materials can be PET etc..Preferably, the thickness of transparent base is 0.01~1mm.
The material of first transparency dielectric layer can be transparent dielectric material common in this area, generally metal oxygen
(dopant material includes one or more materials such as Al, Ga, Zr, B, Y, Mo and mixes for compound, nitride, sulfide or its dopant
It is miscellaneous), such as TiO2, SnO2, ZnO, SiO2, Nb2O5, Ta2O5, Si3N4, ZnS, dopant is including AZO, GZO, YZO, ITO etc..Should
The thickness of layer can be set according to the actual requirements, and the present invention has found after research, when the thickness of the first transparency dielectric layer
It is 10~100nm more preferably in 20~25nm, nesa coating has the performances such as more preferable weatherability.
Aqueous vapor separation layer be contact with metal alloy layer one or more layers, for obstruct steam and progress antioxidant guarantor
Shield.The material used for metal, metal nitride or metal oxide, as Ti, Ni, Cr, NiCr, TiN, ZnO, TiO2, SnO2,
SiO2, Nb2O5, Ta2O5, Si3N4 etc..Aqueous vapor separation layer has preferable water vapor rejection effect, can have product good
Inoxidizability, improves the service life of product.The thickness of aqueous vapor separation layer can be set according to the actual requirements, present invention warp
Research finds, when the thickness of aqueous vapor separation layer is 0.1~20nm, preferably in 1~10nm, aqueous vapor separation layer and other layers it
Between there is preferably synergistic effect so that nesa coating has the performance such as more preferable weatherability.
The material that metal alloy layer uses is generally Ag alloys or Cu alloys.In Ag alloy-layers, the ratio of Ag is more than 80%,
Remaining 20% can be any of Zn, Cu, In, Pt, Pd, Au or a variety of etc.；In Cu alloys, the ratio of Cu is more than 80%,
Remaining 20% can be any of Ag, Zn, In, Pt, Pd, Au or a variety of etc..Thickness is generally in 5~20nm.In order to reduce
The thickness of nesa coating, it is preferable that the thickness of metal alloy layer is 8~10nm.
The material that second transparency dielectric layer uses is generally metal oxide, nitride, sulfide or its dopant
(it is one or more material doped that dopant material includes Al, Ga, Zr, B, Y, Mo etc.), as TiO2, SnO2, ZnO, SiO2, Nb2O5,
Ta2O5, Si3N4, ZnS, dopant is including AZO, GZO, YZO, ITO etc..The thickness of this layer can be set according to the actual requirements
It is fixed.Preferably, which is 10~100nm.
Anti-reflection protective layer is one or more layers that contacted with the second transparency dielectric layer, the material of use be generally MgF2,
The low folding material such as SiO2, ice crystal, refractive index are 1.30~1.80.The thickness of anti-reflection protective layer can carry out according to the actual requirements
Setting, the present invention it has been investigated that, when thickness be 1~20nm, preferably in 5~10nm, anti-reflection protective layer and other layers it
Between have preferably synergistic effect so that nesa coating is with more preferable transmitance and with performances such as anti-oxidation protections.
Obtain after tested, transmissivity of the nesa coating provided by the invention in visible-range is more than 70% and sheet resistance
Less than 300 Ω.Preferably, transmissivity of the nesa coating in visible-range is not less than 80%, the electrically conducting transparent
The sheet resistance of film no more than 15 Ω and under the conditions of 85 DEG C of 240h temperature, humidity 85%RH weatherability test meet resistance value and transmitance
Change rate ratio is not more than 1.2.As it can be seen that nesa coating provided by the invention has the good transparency, there is good lead
Electrically and there is good weatherability.
The present invention also found that the thickness and material of each layer by controlling nesa coating, enable to through research
Bright conducting film produces good technique effect.
Embodiment one
As shown in Fig. 2, nesa coating includes Nb2O5 layers 21, Si3N4 layers 22, the Ag alloys being stacked from lower to upper
Layer 23, ITO layer 24 and SiO2 layers 25.Nb2O5 layers described, Si3N4 layers, Ag alloy-layers, ITO layer and SiO2 layers of thickness are respectively
30nm, 5nm, 12nm, 45nm and 5nm.Nesa coating has preferable performance (including weatherability, transparency, adhesion at this time
Deng).
Table 1,2 is the test result of one product of embodiment
Table 1
| Sheet resistance Ω | VLT (%) | Adhesive force |
| 8.8 | 88.5% | 100/100 |
Weatherability test conditions：It is hot and humid:85 DEG C, 85%RH, high-temperature storage:80 DEG C, low-temperature storage:It is -40 DEG C, cold and hot
Impact:- 40 DEG C of (60min) to 80 DEG C (60min), 20cycles, as a result such as table 2
Table 2
Embodiment two
Nb2O5 layers that nesa coating includes being stacked from lower to upper, Si3N4 layers, Cu alloy-layers, ITO layer and SiO2
Layer.Nb2O5 layers described, Si3N4 layers, Cu alloy-layers, ITO layer and SiO2 layers of thickness be respectively 50nm, 10nm, 5nm, 30nm and
20nm。
Table 3,4 is the test result of two product of embodiment
Table 3
| Sheet resistance Ω | VLT (%) | Adhesive force |
| 13 | 88.9% | 100/100 |
Weatherability test conditions：It is hot and humid:85 DEG C, 85%RH, high-temperature storage:80 DEG C, low-temperature storage:It is -40 DEG C, cold and hot
Impact:- 40 DEG C of (60min) to 80 DEG C (60min), 20cycles, as a result such as table 4
Table 4
Embodiment three
Nb2O5 layers that nesa coating includes being stacked from lower to upper, Si3N4 layers, Ag alloy-layers, ITO layer and SiO2
Layer.Nb2O5 layers described, Si3N4 layers, Ag alloy-layers, ITO layer and SiO2 layers of thickness be respectively 80nm, 1nm, 8nm, 50nm and
10nm。
Table 5,6 is the test result of three product of embodiment
Table 5
| Sheet resistance Ω | VLT (%) | Adhesive force |
| 15 | 89.9% | 100/100 |
Weatherability test conditions：It is hot and humid:85 DEG C, 85%RH, high-temperature storage:80 DEG C, low-temperature storage:It is -40 DEG C, cold and hot
Impact:- 40 DEG C of (60min) to 80 DEG C (60min), 20cycles, as a result such as table 6
Table 6
The present invention can use Reel-to-reel type magnetron sputtering deposition method, and above layers are sequentially prepared on flexible and transparent base material.
There is sputtering multiple material using Reel-to-reel type magnetron sputtering deposition method, vacuum is high, strong adhesive force, and membrane material is fine and close, can be soft
Plated film on property base material.
Certainly, nesa coating provided by the invention can also use other processes to carry out, such as chemical vapor deposition
Product or physical vapour deposition (PVD) etc., its technical process and technological parameter are referred to the prior art, and details are not described herein.
Present invention also offers a kind of electronic device such as touch-screen, including nesa coating disclosed above.
The present invention is described by embodiment, but is not limited the invention, with reference to description of the invention, institute
Other changes of disclosed embodiment, are such as readily apparent that, such change should belong to for the professional person of this area
Within the scope of the claims in the present invention limit.
Claims (10)
- A kind of 1. nesa coating, it is characterised in that the nesa coating include be stacked from lower to upper transparent base, First transparency dielectric layer, aqueous vapor separation layer, metal alloy layer, the second transparency dielectric layer and anti-reflection protective layer, the steam The material of barrier layer is at least one of metal, metal nitride or metal oxide, and the anti-reflection protective layer is low refraction Layer.
- 2. nesa coating according to claim 1, it is characterised in that the material of the aqueous vapor separation layer for Ti, Ni, At least one of Cr, NiCr, TiN, ZnO, TiO2, SnO2, SiO2, Nb2O5, Ta2O5, Si3N4.
- 3. nesa coating according to claim 1, it is characterised in that the material of the anti-reflection protective layer for MgF2, At least one of SiO2, ice crystal.
- 4. nesa coating according to claim 1, it is characterised in that first transparency dielectric layer and described second Transparency dielectric layer is independently selected from following material：In at least one of metal oxide, nitride, sulfide or the metal oxide, nitride, sulfide at least A kind of dopant.
- 5. nesa coating according to claim 1, it is characterised in that the metal alloy layer closes for Ag alloy-layers or Cu Layer gold, the ratio of Ag is not less than 80% in the Ag alloy-layers, and the ratio of Cu is not less than 80% in the Cu alloy-layers.
- 6. nesa coating according to claim 1, it is characterised in that the thickness of the transparent base is 0.01~1mm, The thickness of first transparency dielectric layer and second transparency dielectric layer is independently selected from 10~100nm, described The thickness of aqueous vapor separation layer is 0.1~20nm, and the thickness of the metal alloy layer is 5~20nm, the thickness of the anti-reflection protective layer Spend for 1~20nm.
- 7. nesa coating according to claim 1, it is characterised in that the nesa coating is in visible-range Transmissivity is more than 70% and resistance value is less than 300 Ω.
- 8. nesa coating according to claim 1, it is characterised in that the nesa coating includes being laminated from lower to upper The Nb2O5 layers of setting, Si3N4 layers, Ag alloy-layers, ITO layer and SiO2 layers.
- 9. nesa coating according to claim 8, it is characterised in that Nb2O5 layers described, Si3N4 layers, Ag alloy-layers, ITO layer and SiO2 layers of thickness are respectively 30nm, 5nm, 12nm, 45nm and 5nm.
- 10. a kind of electronic device, it is characterised in that including nesa coating as claimed in any one of claims 1-9 wherein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711163213.6A CN107993746A (en) | 2017-11-21 | 2017-11-21 | A kind of nesa coating and the electronic device based on it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711163213.6A CN107993746A (en) | 2017-11-21 | 2017-11-21 | A kind of nesa coating and the electronic device based on it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107993746A true CN107993746A (en) | 2018-05-04 |
Family
ID=62031757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711163213.6A Pending CN107993746A (en) | 2017-11-21 | 2017-11-21 | A kind of nesa coating and the electronic device based on it |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107993746A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933331A (en) * | 2020-09-03 | 2020-11-13 | 深圳市诺斯特新材料股份有限公司 | Transparent conductive film and electronic device |
| CN112867381A (en) * | 2021-01-21 | 2021-05-28 | 广东技术师范大学 | Wave absorber with adjustable absorption efficiency and bandwidth distributed on regular geometric plane surface |
| CN113140353A (en) * | 2021-03-11 | 2021-07-20 | 中国乐凯集团有限公司 | Flexible transparent conductive film and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1474949A (en) * | 2000-09-19 | 2004-02-11 | Cp���ֹ�˾ | Low reflection, high transmission, touch-panel membrane |
| CN202782020U (en) * | 2012-07-31 | 2013-03-13 | 信义光伏产业(安徽)控股有限公司 | Conductive glass |
| CN205069151U (en) * | 2015-07-17 | 2016-03-02 | 张家港康得新光电材料有限公司 | Transparent conductive thin film and touch -sensitive screen |
| CN105551582A (en) * | 2016-02-03 | 2016-05-04 | 张家港康得新光电材料有限公司 | Transparent conductive thin film and touch screen with same |
-
2017
- 2017-11-21 CN CN201711163213.6A patent/CN107993746A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1474949A (en) * | 2000-09-19 | 2004-02-11 | Cp���ֹ�˾ | Low reflection, high transmission, touch-panel membrane |
| CN202782020U (en) * | 2012-07-31 | 2013-03-13 | 信义光伏产业(安徽)控股有限公司 | Conductive glass |
| CN205069151U (en) * | 2015-07-17 | 2016-03-02 | 张家港康得新光电材料有限公司 | Transparent conductive thin film and touch -sensitive screen |
| CN105551582A (en) * | 2016-02-03 | 2016-05-04 | 张家港康得新光电材料有限公司 | Transparent conductive thin film and touch screen with same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933331A (en) * | 2020-09-03 | 2020-11-13 | 深圳市诺斯特新材料股份有限公司 | Transparent conductive film and electronic device |
| CN112867381A (en) * | 2021-01-21 | 2021-05-28 | 广东技术师范大学 | Wave absorber with adjustable absorption efficiency and bandwidth distributed on regular geometric plane surface |
| CN113140353A (en) * | 2021-03-11 | 2021-07-20 | 中国乐凯集团有限公司 | Flexible transparent conductive film and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205069151U (en) | Transparent conductive thin film and touch -sensitive screen | |
| CN105144045B (en) | Conductive structure and its manufacture method | |
| US20120152347A1 (en) | Stacked electrode and photo-electric device having the same | |
| CN104064257B (en) | Low-resistance ITO transparent conductive film | |
| CN107993746A (en) | A kind of nesa coating and the electronic device based on it | |
| CN207529686U (en) | Transparent conductive film and electronic device | |
| CN105845196B (en) | Manganese tin-oxide class transparent conductive oxide and using its multi-layer transparent conductive film with and preparation method thereof | |
| CN102194539A (en) | Transparent conductive laminate and method for producing same | |
| JP6511876B2 (en) | Laminated transparent conductive film | |
| CN108010605A (en) | Nesa coating and its electronic device | |
| CN108010606A (en) | A kind of nesa coating and its electronic device | |
| EP4160624A1 (en) | Double-sided conductive film, coating method, and touch screen | |
| Niu et al. | Spreadability of Ag layer on oxides and high performance of AZO/Ag/AZO sandwiched transparent conductive film | |
| CN107507661A (en) | A kind of nesa coating | |
| KR20150105798A (en) | Transparent electrode and manufacturing method thereof | |
| CN212392011U (en) | Low-sheet-resistance transparent conductive film | |
| CN206270923U (en) | A kind of double-sided conductive film and touch screen | |
| KR102032011B1 (en) | Conductive laminate and transparent electrode comprising thereof | |
| CN107430904B (en) | Conductive structure and electronic device including the same | |
| CN212392012U (en) | Low sheet resistance transparent conductive film | |
| CN108766631A (en) | A kind of laminated film | |
| CN212392013U (en) | Transparent conductive film with low sheet resistance | |
| KR20140090876A (en) | Flexible Multilayer Transparent Eletrode | |
| CN104409139B (en) | Transparent conducting structures and the capacitive touch screen comprising the transparent conducting structures | |
| CN102157223A (en) | Transparent conductive laminate and method for producing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180504 |
|
| WD01 | Invention patent application deemed withdrawn after publication |