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CN107986638A - The preparation method of electrostatic prevention film and electrostatic prevention film - Google Patents

The preparation method of electrostatic prevention film and electrostatic prevention film Download PDF

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Publication number
CN107986638A
CN107986638A CN201711330241.2A CN201711330241A CN107986638A CN 107986638 A CN107986638 A CN 107986638A CN 201711330241 A CN201711330241 A CN 201711330241A CN 107986638 A CN107986638 A CN 107986638A
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layer
silicon dioxide
sputtering
prevention film
niobium pentaoxide
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张迅
易伟华
郑芳平
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WG Tech Jiangxi Co Ltd
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WG Tech Jiangxi Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C08J7/06—Coating with compositions not containing macromolecular substances
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/218—V2O5, Nb2O5, Ta2O5
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/23—Mixtures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/23—Mixtures
    • C03C2217/231—In2O3/SnO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/70—Properties of coatings
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/04—Homopolymers or copolymers of ethene
    • C08J2323/06—Polyethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/10—Homopolymers or copolymers of propene
    • C08J2323/12—Polypropene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2327/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers
    • C08J2327/02—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment
    • C08J2327/12—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C08J2327/18—Homopolymers or copolymers of tetrafluoroethylene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2333/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
    • C08J2333/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
    • C08J2333/06—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C08J2333/10—Homopolymers or copolymers of methacrylic acid esters
    • C08J2333/12—Homopolymers or copolymers of methyl methacrylate

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  • Chemical & Material Sciences (AREA)
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  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to the preparation method of a kind of electrostatic prevention film and electrostatic prevention film.A kind of electrostatic prevention film, including：Substrate；Photic zone, the photic zone include being laminated in the niobium pentaoxide layer of the substrate surface and are laminated in silicon dioxide layer of the niobium pentaoxide away from the substrate surface；Antistatic backing, the antistatic backing are laminated in surface of the silicon dioxide layer away from the niobium pentaoxide layer, and the antistatic backing is ITO layer；And corrosion-resistant coating, the corrosion-resistant coating are laminated in the surface of the electrostatic discharge layer away from the silicon dioxide layer, the corrosion-resistant coating is ATO layers.The preparation method of above-mentioned electrostatic prevention film and electrostatic prevention film, in TFT glass, can avoid the fluosilicate material of glass surface from causing to corrode to ITO layer, while be laminated ATO layers on the ito layer, be avoided that ITO layer is corroded by the humidity in air and acid-base material；And niobium pentaoxide layer and silicon dioxide layer can form optics high transmittance film, effectively improve the transmissivity of electrostatic prevention film.

Description

The preparation method of electrostatic prevention film and electrostatic prevention film
Technical field
The present invention relates to anti-static material technical field, more particularly to the preparation method of electrostatic prevention film and electrostatic prevention film.
Background technology
Current major part TFT products are required for reduction processing, in thinning process, it is necessary to sour using HF, and in glass substrate Containing the partial impurities material such as Na, Ga, fluosilicate is easily so formed on the glass substrate, during production, glass The fluosilicate on surface cannot be guaranteed 100% it is fully erased, can inevitably remain fluosilicate material, fluosilicate is in atmosphere Easily hydrolysis presents acid.And the film layer that antistatic coated product is plated is singly to plate ito film layer, the product of such plated film out, Because the remaining fluosilicate material of glass surface is considerably less, infringement of the acidic materials to film layer is difficult to observe by a short time, and when Grown between as soon as, ito film layer is very easy to destroyed, and it is dirty film layer occur, influences film quality.Meanwhile produced in antistatic plated film Ito film layer is singly plated on product, the translucency of product is also poor.It is competing in increasingly fierce touch-screen industry since technical indicator is relatively low Strive and be in more and more unfavorable status, as people pursue the continuous of quality, producing more superior ITO anti-static products will gather around There is bigger to obtain market.
The content of the invention
Based on this, it is necessary to for asking for the easy destroyed and electrostatic prevention film translucency difference of ITO layer in current electrostatic prevention film A kind of topic, there is provided preparation method of electrostatic prevention film and electrostatic prevention film.
A kind of electrostatic prevention film, including：
Substrate；
Photic zone, the photic zone include being laminated in the niobium pentaoxide layer of the substrate surface and are laminated in five oxygen Change silicon dioxide layer of two niobiums away from the substrate surface；
Antistatic backing, the antistatic backing are laminated in surface of the silicon dioxide layer away from the niobium pentaoxide layer, The antistatic backing is ITO layer；And
Corrosion-resistant coating, the corrosion-resistant coating is laminated in the surface of the electrostatic discharge layer away from the silicon dioxide layer, described Corrosion-resistant coating is ATO layers.
In a wherein embodiment, the thickness of the niobium pentaoxide layer is 15nm~50nm.
In a wherein embodiment, the thickness of the silicon dioxide layer is 20nm~90nm.
In a wherein embodiment, the thickness of the ITO layer is 10nm~1000nm.
In a wherein embodiment, thickness ATO layers described is 5nm~50nm.
In a wherein embodiment, the mass ratio of indium oxide and tin oxide is 95 in the ITO layer:5~80:20.
In a wherein embodiment, it is ATO layers described in the mass ratio of tin oxide and antimony oxide be 95:5~70:30.
The preparation method of above-mentioned electrostatic prevention film, comprises the following steps：
Photic zone is formed on substrate, wherein, the photic zone includes the niobium pentaoxide for being laminated in the substrate surface Layer and it is laminated in silicon dioxide layer of the niobium pentaoxide away from the substrate surface；
Antistatic backing is formed on surface of the silicon dioxide layer away from the niobium pentaoxide layer, the antistatic backing is ITO layer；And
Corrosion-resistant coating is formed on surface of the electrostatic discharge layer away from the silicon dioxide layer, the corrosion-resistant coating is ATO Layer.
In a wherein embodiment, photic zone is formed on the substrate by the way of sputtering；
It is described to form euphotic step on the substrate by the way of sputtering and specifically include：In the table of the substrate Face sputters to form niobium pentaoxide layer, wherein, the sputtering uses radio-frequency power supply or intermediate frequency power supply when forming niobium pentaoxide layer Sputtered, sputter temperature is 20 DEG C~40 DEG C, and the flow for being passed through argon gas is 100SCCM~200SCCM, is passed through the flow of oxygen For 50SCCM~150SCCM；And
Sputter to form silicon dioxide layer on the surface of the niobium pentaoxide layer away from the substrate, wherein, the sputtering Sputtered when forming silicon dioxide layer using radio-frequency power supply or intermediate frequency power supply, sputter temperature is 70 DEG C~85 DEG C, is passed through argon gas Flow be 100SCCM~200SCCM, the flow for being passed through oxygen is 50SCCM~150SCCM.
In a wherein embodiment, in remote five oxidation two of the silicon dioxide layer by the way of sputtering The surface of niobium layer forms antistatic backing, and the antistatic backing is ITO layer；Wherein, in the silica by the way of sputtering Layer remote the niobium pentaoxide layer surface formed antistatic backing when use radio-frequency power supply, intermediate frequency power supply or DC power supply into Row sputtering, sputter temperature are 60 DEG C~80 DEG C, and the flow for being passed through argon gas is 100SCCM~200SCCM, and the flow for being passed through oxygen is 1SCCM~5SCCM；
And/or anticorrosion is formed on surface of the antistatic backing away from the silicon dioxide layer by the way of sputtering Layer, the corrosion-resistant coating are ATO layers；Wherein, by the way of sputtering in the antistatic backing away from the silicon dioxide layer Surface is sputtered when forming corrosion-resistant coating using radio-frequency power supply, intermediate frequency power supply or DC power supply, and sputter temperature is 70 DEG C~100 DEG C, the flow for being passed through argon gas is 100SCCM~200SCCM, and the flow for being passed through oxygen is 7SCCM~10SCCM.
Above-mentioned electrostatic prevention film, stacks gradually photic zone, antistatic backing and corrosion-resistant coating on substrate, and wherein photic zone includes The niobium pentaoxide layer and silicon dioxide layer stacked gradually, niobium pentaoxide layer and silicon dioxide layer have the corruption of preferable acid and alkali-resistance Erosion ability, in TFT glass, can avoid the fluosilicate material of glass surface from causing to corrode to ITO layer, while in ITO layer Upper ATO layers of stacking, is not only avoided that ITO layer is corroded by the humidity in air and acid-base material, and ITO layer and ATO layers of layer Stack structure has preferable electric conductivity and transmissivity；Niobium pentaoxide layer and silicon dioxide layer can form optics high transmittance film at the same time, Effectively improve the transmissivity of electrostatic prevention film.
Brief description of the drawings
Fig. 1 is the structure diagram of the electrostatic prevention film of an embodiment；
Fig. 2 is the flow chart of the preparation method of the electrostatic prevention film of an embodiment.
Embodiment
The preparation method of electrostatic prevention film and electrostatic prevention film is done further below in conjunction with embodiment and attached drawing Describe in detail.
Referring to Fig. 1, the electrostatic prevention film 100 of an embodiment include substrate 110, photic zone 120, antistatic backing 130 and Corrosion-resistant coating 140.
In a wherein embodiment, substrate 110 is glass substrate or high-molecular organic material substrate.Further, Glass substrate is selected from soda-lime glass, Pyrex or aluminosilicate glass.High-molecular organic material substrate is selected from polypropylene substrate, poly- second Alkenyl plate, ptfe substrate or polymethyl methacrylate base plate.
In a wherein embodiment, the thickness of substrate 110 is 0.2mm~10mm.
Specific in present embodiment, substrate 110 is the glass substrate in the TFT products after reduction processing, is carried out It is thinned during reduction processing using hydrofluoric acid.
In the illustrated embodiment, photic zone 120 is laminated in the surface of substrate 110.Further, photic zone 120 wraps Include the niobium pentaoxide layer 121 stacked gradually and silicon dioxide layer 122.
Niobium pentaoxide layer 121 is laminated in the surface of substrate 110.Further, the thickness of niobium pentaoxide layer 121 is 15nm~50nm.Further, the thickness of niobium pentaoxide layer 121 is 25nm~46nm.Further, niobium pentaoxide The thickness of layer 121 is 32nm~40nm.
Silicon dioxide layer 122 is laminated in surface of the niobium pentaoxide layer 121 away from substrate 110.Further, silica The thickness of layer 122 is 20nm~90nm.Further, the thickness of silicon dioxide layer 122 is 23nm~78nm.Further , the thickness of silicon dioxide layer 122 is 48nm~56nm.
Optics high transmittance film system is cooperatively formed using niobium pentaoxide layer and silicon dioxide layer, the saturating of product can be effectively improved Penetrate rate；Meanwhile niobium pentaoxide layer and silicon dioxide layer are respectively provided with stronger acid-alkali-corrosive-resisting ability and oxidation resistance, especially Be in the preparation of TFT glass, first be laminated on the glass substrate combined by niobium pentaoxide layer and silicon dioxide layer formed it is saturating Photosphere, can prevent other film layers from causing corrosion and destruction to film layer when directly being contacted with glass substrate.
In addition, using niobium pentaoxide layer and the antireflection characteristic of silicon dioxide layer, by adjusting niobium pentaoxide layer and The electrostatic prevention film product of a variety of different colours can be prepared in the thickness of silicon dioxide layer.
In the illustrated embodiment, antistatic backing 130 is laminated in silicon dioxide layer 122 away from niobium pentaoxide layer 121 Surface.
In a wherein embodiment, antistatic backing 130 is ITO (tin indium oxide) layer.Further, the thickness of ITO layer Spend for 10nm~1000nm.Preferably, the thickness of ITO layer is 15nm~30nm.
In a wherein embodiment, the mass ratio of indium oxide and tin oxide is 95 in ITO layer:5~80:20.It is preferred that , the mass ratio of indium oxide and tin oxide is 90 in ITO layer:10~85:15.
In the illustrated embodiment, put corrosion layer 140 and be laminated in surface of the antistatic backing 130 away from photic zone 120.
In a wherein embodiment, corrosion-resistant coating 140 is ATO (tin-antiomony oxide) layer.Further, ATO layers of thickness Spend for 5nm~50nm.Preferably, ATO layers of thickness is 10nm~15nm.
In a wherein embodiment, the mass ratio of tin oxide and antimony oxide is 95 in ATO layers:5~70:30.It is preferred that , the mass ratio of tin oxide and antimony oxide is 90 in ATO layers:10~80:20.
ATO layers have stronger acid-alkali-corrosive-resisting ability and oxidation resistance, and ATO layers are re-formed on the surface of ito film layer It can avoid the humidity and acid-base material destroys and corrosion that ITO layer is likely to be exposed in environment, moreover it is possible to avoid ITO layer from being aoxidized And there is the phenomenon of electrostatic prevention film resistance value increase.
Above-mentioned electrostatic prevention film, stacks gradually photic zone, antistatic backing and corrosion-resistant coating on substrate, and wherein photic zone includes The niobium pentaoxide layer and silicon dioxide layer stacked gradually, niobium pentaoxide layer and silicon dioxide layer have the corruption of preferable acid and alkali-resistance Erosion ability, in TFT glass, can avoid the fluosilicate material of glass surface from causing to corrode to ITO layer, while in ITO layer Upper ATO layers of stacking, is avoided that ITO layer is corroded by the humidity in air and acid-base material；And niobium pentaoxide layer and silica Layer can form optics high transmittance film, effectively improve the transmissivity of electrostatic prevention film.
In addition, niobium pentaoxide layer is on substrate, ITO layer is respectively provided with preferable adhesion on the surface of silicon dioxide layer Can so that above-mentioned electrostatic prevention film is also with preferable mechanical property.And ATO layers also have preferable electric conductivity, ITO layer and ATO layers of formation parallel series circuit, will not impact the resistance value and anti-static effect of electrostatic prevention film.
Further referring to Fig. 2, the preparation method of the electrostatic prevention film of an embodiment comprises the following steps：
S110, form photic zone by the way of sputtering on substrate.
In a wherein embodiment, by the way of sputtering forming euphotic step on substrate specifically includes：
S111, on the surface of substrate sputter to form niobium pentaoxide layer.
In a wherein embodiment, when the surface of substrate sputters to form niobium pentaoxide layer using radio-frequency power supply or Intermediate frequency power supply is sputtered.
In a wherein embodiment, sputter temperature is 20 DEG C~40 DEG C, be passed through the flow of argon gas for 100SCCM~ 200SCCM, the flow for being passed through oxygen are 50SCCM~150SCCM.
S112, on surface of the niobium pentaoxide layer away from substrate sputter to form silicon dioxide layer.
In a wherein embodiment, when sputtering to form silicon dioxide layer on surface of the niobium pentaoxide layer away from substrate Sputtered using radio-frequency power supply or intermediate frequency power supply.
In a wherein embodiment, sputter temperature is 70 DEG C~85 DEG C, be passed through the flow of argon gas for 100SCCM~ 200SCCM, the flow for being passed through oxygen are 50SCCM~150SCCM.
S120, by the way of sputtering silicon dioxide layer remote niobium pentaoxide layer surface formed antistatic backing.
In a wherein embodiment, antistatic backing is ITO layer.
In a wherein embodiment, by the way of sputtering silicon dioxide layer remote niobium pentaoxide layer table Face is sputtered when forming antistatic backing using radio-frequency power supply, intermediate frequency power supply or DC power supply.
In a wherein embodiment, sputter temperature is 60 DEG C~80 DEG C, be passed through the flow of argon gas for 100SCCM~ 200SCCM, the flow for being passed through oxygen are 0~5SCCM.
S130, form corrosion-resistant coating by the way of sputtering on surface of the antistatic backing away from silicon dioxide layer.
In a wherein embodiment, corrosion-resistant coating is ATO layers.
In a wherein embodiment, formed by the way of sputtering on surface of the antistatic backing away from silicon dioxide layer Sputtered during corrosion-resistant coating using radio-frequency power supply, intermediate frequency power supply or DC power supply.
In a wherein embodiment, sputter temperature is 70 DEG C~100 DEG C, be passed through the flow of argon gas for 100SCCM~ 200SCCM, the flow for being passed through oxygen are 0~10SCCM.
The preparation method of above-mentioned electrostatic prevention film is easy to operate, easily realizes industrialized production.
It is the explanation of specific embodiment below, following embodiments unless otherwise specified, are not then contained except inevitably miscellaneous The component pointed out is not known in other beyond matter.
Embodiment 1
(1) glass substrate that thickness is 0.3mm is obtained；
(2) mode of sputtering is used to form niobium pentaoxide layer of the thickness for 15nm on the surface of glass substrate, wherein, splash The temperature penetrated is 35 DEG C, and the flow for being passed through argon gas is 100SCCM, and the flow for being passed through oxygen is 100SCCM；
(3) mode of sputtering is used to form dioxy of the thickness for 90nm on surface of the niobium pentaoxide layer away from glass substrate SiClx layer, wherein, the temperature of sputtering is 70 DEG C, and the flow for being passed through argon gas is 100SCCM, and the flow for being passed through oxygen is 50SCCM；
(4) mode of sputtering is used to form thickness on surface of the silicon dioxide layer away from niobium pentaoxide layer as 10nm's ITO layer, the mass ratio of indium oxide and tin oxide is 95 in ITO layer:5；Wherein, the temperature of sputtering is 60 DEG C, is passed through the stream of argon gas Measure as 120SCCM, the flow for being passed through oxygen is 1SCCM；
(5) mode of sputtering is used to form ATO layer of the thickness for 5nm on surface of the ITO layer away from silicon dioxide layer.ATO The mass ratio of tin oxide and antimony oxide is 95 in layer:5；Wherein, the temperature of sputtering is 80 DEG C, and the flow for being passed through argon gas is 120SCCM, the flow for being passed through oxygen are 10SCCM.
Embodiment 2
(1) glass substrate that thickness is 0.35mm is obtained；
(2) mode of sputtering is used to form niobium pentaoxide layer of the thickness for 46nm on the surface of glass substrate, wherein, splash The temperature penetrated is 40 DEG C, and the flow for being passed through argon gas is 150SCCM, and the flow for being passed through oxygen is 80SCCM；
(3) mode of sputtering is used to form dioxy of the thickness for 23nm on surface of the niobium pentaoxide layer away from glass substrate SiClx layer, wherein, the temperature of sputtering is 85 DEG C, and the flow for being passed through argon gas is 200SCCM, and the flow for being passed through oxygen is 50SCCM；
(4) mode of sputtering is used to form thickness on surface of the silicon dioxide layer away from niobium pentaoxide layer as 30nm's ITO layer, the mass ratio of indium oxide and tin oxide is 85 in ITO layer:15；Wherein, the temperature of sputtering is 65 DEG C, is passed through the stream of argon gas Measure as 200SCCM, the flow for being passed through oxygen is 5SCCM；
(5) mode of sputtering is used to form ATO layer of the thickness for 15nm on surface of the ITO layer away from silicon dioxide layer.ATO The mass ratio of tin oxide and antimony oxide is 70 in layer:30；Wherein, the temperature of sputtering is 85 DEG C, and the flow for being passed through argon gas is 180SCCM, the flow for being passed through oxygen are 8SCCM.
Embodiment 3
(1) glass substrate that thickness is 0.2mm is obtained；
(2) mode of sputtering is used to form niobium pentaoxide layer of the thickness for 32nm on the surface of glass substrate, wherein, splash The temperature penetrated is 37 DEG C, and the flow for being passed through argon gas is 120SCCM, and the flow for being passed through oxygen is 100SCCM；
(3) mode of sputtering is used to form dioxy of the thickness for 56nm on surface of the niobium pentaoxide layer away from glass substrate SiClx layer, wherein, the temperature of sputtering is 75 DEG C, and the flow for being passed through argon gas is 150SCCM, and the flow for being passed through oxygen is 100SCCM；
(4) mode of sputtering is used to form thickness on surface of the silicon dioxide layer away from niobium pentaoxide layer as 20nm's ITO layer, the mass ratio of indium oxide and tin oxide is 80 in ITO layer:20；Wherein, the temperature of sputtering is 60 DEG C, is passed through the stream of argon gas Measure as 150SCCM, the flow for being passed through oxygen is 4SCCM；
(5) mode of sputtering is used to form ATO layer of the thickness for 10nm on surface of the ITO layer away from silicon dioxide layer.ATO The mass ratio of tin oxide and antimony oxide is 80 in layer:20；Wherein, the temperature of sputtering is 70 DEG C, and the flow for being passed through argon gas is 100SCCM, the flow for being passed through oxygen are 7SCCM.
Embodiment 4
(1) glass substrate that thickness is 0.25mm is obtained；
(2) mode of sputtering is used to form niobium pentaoxide layer of the thickness for 25nm on the surface of glass substrate, wherein, splash The temperature penetrated is 25 DEG C, and the flow for being passed through argon gas is 200SCCM, and the flow for being passed through oxygen is 50SCCM；
(3) mode of sputtering is used to form dioxy of the thickness for 78nm on surface of the niobium pentaoxide layer away from glass substrate SiClx layer, wherein, the temperature of sputtering is 80 DEG C, and the flow for being passed through argon gas is 120SCCM, and the flow for being passed through oxygen is 120SCCM；
(4) mode of sputtering is used to form thickness on surface of the silicon dioxide layer away from niobium pentaoxide layer as 15nm's ITO layer, the mass ratio of indium oxide and tin oxide is 90 in ITO layer:10；Wherein, the temperature of sputtering is 80 DEG C, is passed through the stream of argon gas Measure as 200SCCM, the flow for being passed through oxygen is 1SCCM；
(5) mode of sputtering is used to form ATO layer of the thickness for 5nm on surface of the ITO layer away from silicon dioxide layer.ATO The mass ratio of tin oxide and antimony oxide is 85 in layer:15；Wherein, the temperature of sputtering is 90 DEG C, and the flow for being passed through argon gas is 200SCCM, the flow for being passed through oxygen are 8SCCM.
Embodiment 5
(1) glass substrate that thickness is 0.4mm is obtained；
(2) mode of sputtering is used to form niobium pentaoxide layer of the thickness for 40nm on the surface of glass substrate, wherein, splash The temperature penetrated is 35 DEG C, and the flow for being passed through argon gas is 180SCCM, and the flow for being passed through oxygen is 50SCCM；
(3) mode of sputtering is used to form dioxy of the thickness for 48nm on surface of the niobium pentaoxide layer away from glass substrate SiClx layer, wherein, the temperature of sputtering is 80 DEG C, and the flow for being passed through argon gas is 160SCCM, and the flow for being passed through oxygen is 80SCCM；
(4) mode of sputtering is used to form thickness on surface of the silicon dioxide layer away from niobium pentaoxide layer as 25nm's ITO layer, the mass ratio of indium oxide and tin oxide is 82 in ITO layer:18；Wherein, the temperature of sputtering is 75 DEG C, is passed through the stream of argon gas Measure as 160SCCM, the flow for being passed through oxygen is 3SCCM；
(5) mode of sputtering is used to form ATO layer of the thickness for 12nm on surface of the ITO layer away from silicon dioxide layer.ATO The mass ratio of tin oxide and antimony oxide is 90 in layer:10；Wherein, the temperature of sputtering is 85 DEG C, and the flow for being passed through argon gas is 100SCCM, the flow for being passed through oxygen are 10SCCM.
Embodiment 6
(1) glass substrate that thickness is 10mm is obtained；
(2) mode of sputtering is used to form niobium pentaoxide layer of the thickness for 50nm on the surface of glass substrate, wherein, splash The temperature penetrated is 70 DEG C, and the flow for being passed through argon gas is 180SCCM, and the flow for being passed through oxygen is 50SCCM；
(3) mode of sputtering is used to form dioxy of the thickness for 46nm on surface of the niobium pentaoxide layer away from glass substrate SiClx layer, wherein, the temperature of sputtering is 78 DEG C, and the flow for being passed through argon gas is 170SCCM, and the flow for being passed through oxygen is 120SCCM；
(4) mode of sputtering is used to form thickness on surface of the silicon dioxide layer away from niobium pentaoxide layer as 25nm's ITO layer, the mass ratio of indium oxide and tin oxide is 84 in ITO layer:16；Wherein, the temperature of sputtering is 70 DEG C, is passed through the stream of argon gas Measure as 140SCCM, the flow for being passed through oxygen is 3SCCM；
(5) mode of sputtering is used to form ATO layer of the thickness for 5nm on surface of the ITO layer away from silicon dioxide layer.ATO The mass ratio of tin oxide and antimony oxide is 70 in layer:30；Wherein, the temperature of sputtering is 100 DEG C, and the flow for being passed through argon gas is 200SCCM, the flow for being passed through oxygen are 7SCCM.
Embodiment 7
(1) glass substrate that thickness is 0.5mm is obtained；
(2) mode of sputtering is used to form ITO layer of the thickness for 25nm, indium oxide in ITO layer on the surface of glass substrate Mass ratio with tin oxide is 84:16；Wherein, the temperature of sputtering is 70 DEG C, and the flow for being passed through argon gas is 140SCCM, is passed through oxygen The flow of gas is 3SCCM；
(3) mode of sputtering is used to form niobium pentaoxide of the thickness for 50nm on surface of the ITO layer away from glass substrate Layer, wherein, the temperature of sputtering is 70 DEG C, and the flow for being passed through argon gas is 180SCCM, and the flow for being passed through oxygen is 50SCCM；
(4) mode of sputtering is used to form titanium dioxide of the thickness for 90nm on surface of the niobium pentaoxide layer away from ITO layer Silicon layer, wherein, the temperature of sputtering is 78 DEG C, and the flow for being passed through argon gas is 170SCCM, and the flow for being passed through oxygen is 120SCCM.
Embodiment 8
(1) glass substrate that thickness is 0.6mm is obtained；
(2) mode of sputtering is used to form ITO layer of the thickness for 25nm, indium oxide in ITO layer on the surface of glass substrate Mass ratio with tin oxide is 84:16；Wherein, the temperature of sputtering is 70 DEG C, and the flow for being passed through argon gas is 140SCCM, is passed through oxygen The flow of gas is 3SCCM.
Corrosion resistance, light transmittance and the color of 1~7 preparation-obtained electrostatic prevention film of embodiment are tested, tied Fruit is as shown in table 1.
Wherein, the test method of internal layer corrosion resistance is not polish TFT glass progress plated film by 100 to obtain antistatic Film, counts the yield of film layer after electrostatic prevention film is placed one month under vacuum；
Outer layer acid resistance by immersion 24 it is small when 10% HCL test film layer residual condition；
Outer layer alkali resistance by immersion 24 it is small when 10%NaOH test film layer residual condition；
Light transmittance is tested to obtain by spectrophotometer；
Wherein, internal layer corrosion resistance refers to the corrosion resistance of niobium pentaoxide layer and silicon dioxide layer, outer layer corrosion resistance Refer to ATO layers of corrosion resistance.
Table 1
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, its description is more specific and detailed, but simultaneously Cannot therefore it be construed as limiting the scope of the patent.It should be pointed out that come for those of ordinary skill in the art Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.

Claims (10)

  1. A kind of 1. electrostatic prevention film, it is characterised in that including：
    Substrate；
    Photic zone, the photic zone include being laminated in the niobium pentaoxide layer of the substrate surface and are laminated in five oxidation two Silicon dioxide layer of the niobium away from the substrate surface；
    Antistatic backing, the antistatic backing is laminated in surface of the silicon dioxide layer away from the niobium pentaoxide layer, described Antistatic backing is ITO layer；And
    Corrosion-resistant coating, the corrosion-resistant coating are laminated in the surface of the electrostatic discharge layer away from the silicon dioxide layer, the anti-corrosion It is ATO layers to lose layer.
  2. 2. electrostatic prevention film according to claim 1, it is characterised in that the thickness of the niobium pentaoxide layer for 15nm~ 50nm。
  3. 3. electrostatic prevention film according to claim 1, it is characterised in that the thickness of the silicon dioxide layer for 20nm~ 90nm。
  4. 4. electrostatic prevention film according to claim 1, it is characterised in that the thickness of the ITO layer is 10nm~1000nm.
  5. 5. electrostatic prevention film according to claim 1, it is characterised in that thickness ATO layers described is 5nm~50nm.
  6. 6. electrostatic prevention film according to claim 1, it is characterised in that the quality of indium oxide and tin oxide in the ITO layer Than for 95:5~80:20.
  7. 7. electrostatic prevention film according to claim 1, it is characterised in that the quality of tin oxide and antimony oxide in ATO layers described Than for 95:5~70:30.
  8. 8. such as the preparation method of claim 1~7 any one of them electrostatic prevention film, it is characterised in that comprise the following steps：
    Photic zone is formed on substrate, wherein, the photic zone include be laminated in the substrate surface niobium pentaoxide layer and It is laminated in silicon dioxide layer of the niobium pentaoxide away from the substrate surface；
    Antistatic backing is formed on surface of the silicon dioxide layer away from the niobium pentaoxide layer, the antistatic backing is ITO Layer；And
    Corrosion-resistant coating is formed on surface of the electrostatic discharge layer away from the silicon dioxide layer, the corrosion-resistant coating is ATO layers.
  9. 9. the preparation method of electrostatic prevention film according to claim 8, it is characterised in that in the base by the way of sputtering Photic zone is formed on plate；
    It is described to form euphotic step on the substrate by the way of sputtering and specifically include：Splashed on the surface of the substrate Penetrate to form niobium pentaoxide layer, wherein, the sputtering is carried out when forming niobium pentaoxide layer using radio-frequency power supply or intermediate frequency power supply Sputtering, sputter temperature are 20 DEG C~40 DEG C, and the flow for being passed through argon gas is 100SCCM~200SCCM, and the flow for being passed through oxygen is 50SCCM~150SCCM；And
    Sputter to form silicon dioxide layer on the surface of the niobium pentaoxide layer away from the substrate, wherein, the sputtering is formed Sputtered during silicon dioxide layer using radio-frequency power supply or intermediate frequency power supply, sputter temperature is 70 DEG C~85 DEG C, is passed through the stream of argon gas Measure as 100SCCM~200SCCM, the flow for being passed through oxygen is 50SCCM~150SCCM.
  10. 10. the preparation method of the electrostatic prevention film according to right wants 8, it is characterised in that described two by the way of sputtering The surface of the remote niobium pentaoxide layer of silicon oxide layer forms antistatic backing, and the antistatic backing is ITO layer；Wherein, adopt Used and penetrated when the surface of the remote niobium pentaoxide layer of the silicon dioxide layer forms antistatic backing with the mode of sputtering Frequency power, intermediate frequency power supply or DC power supply are sputtered, and sputter temperature is 60 DEG C~80 DEG C, and the flow for being passed through argon gas is 100SCCM~200SCCM, the flow for being passed through oxygen are 1SCCM~5SCCM；
    And/or corrosion-resistant coating, institute are formed on surface of the antistatic backing away from the silicon dioxide layer by the way of sputtering Corrosion-resistant coating is stated as ATO layers；Wherein, in surface shape of the antistatic backing away from the silicon dioxide layer by the way of sputtering Sputtered into during corrosion-resistant coating using radio-frequency power supply, intermediate frequency power supply or DC power supply, sputter temperature is 70 DEG C~100 DEG C, is led to The flow for entering argon gas is 100SCCM~200SCCM, and the flow for being passed through oxygen is 7SCCM~10SCCM.
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