CN107978538A - A kind of method for judging transistor bonding crater - Google Patents
A kind of method for judging transistor bonding crater Download PDFInfo
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- CN107978538A CN107978538A CN201711248944.0A CN201711248944A CN107978538A CN 107978538 A CN107978538 A CN 107978538A CN 201711248944 A CN201711248944 A CN 201711248944A CN 107978538 A CN107978538 A CN 107978538A
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- Prior art keywords
- bonding
- crater
- aluminium
- sodium hydroxide
- damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a kind of method for judging transistor bonding crater, detecting step is：1) match somebody with somebody sodium hydroxide solution, be put into beaker, heat；2) sample being bonded is completely immersed in sodium hydroxide solution；3) be bonded aluminium wire and chip surface aluminium react away completely after, take out, with alcohol washes it is clean after, observed in microscope；4) whether the chip after observation cleaning, have damage in bonding point position, if damage, illustrates that the bonding of current bond sequence is problematic, it is necessary to adjust, such as not damaged, illustrates that current bond sequence bonding is problematic.The present invention carries out corrosion anatomy by chemical method to sample, removes the aluminium lamination of chip surface, observes the silicon layer state below aluminium lamination to judge the quality of bonding quality, detecting step is simple, and detection result is good.
Description
Technical field
The invention belongs to field of transistors, more particularly to a kind of method for judging transistor bonding crater.
Background technology
After transistor in road encapsulation, bond sequence is one of its important procedure.It passes through ultrasound using copper wire or aluminium wire
The pin of chip and lead frame is linked together.It is by bonding wire and chip that bonding wire and chip bonding area, which combine,
The combination of aluminium lamination.But if bonding parameter is improper, during bonding, following silicon layer is applied to through chip aluminium lamination, chip will be by
To damage, cause to fail.
After bonding wire and chip aluminium lamination combine, can not check the situation below bonding point, can not know whether chip silicon layer
It is damaged.Rejected when can only test to the end.
The content of the invention
The purpose of the present invention is to overcome the above shortcomings and to provide a kind of method for judging transistor bonding crater, it is detected
Step is simple, and detection result is good.
A kind of method for judging transistor bonding crater, detecting step are：
1) match somebody with somebody sodium hydroxide solution, be put into beaker, heat；
2) sample being bonded is completely immersed in sodium hydroxide solution；
3) be bonded aluminium wire and chip surface aluminium react away completely after, take out, with alcohol washes it is clean after, in microscope
Observation；
4) whether the chip after observation cleaning, have damage in bonding point position, if damage, illustrate current bond sequence
Bonding is problematic, it is necessary to adjust, such as not damaged, illustrates that current bond sequence bonding is problematic.
Further, step 1) the sodium hydroxide solution mass concentration is 8%-16%.
Further, the step 1) heating-up temperature is 70-90 DEG C.
Further, step 3) determines the reaction time according to the step 2) sample, by reacting the sufficiently long time
Do not produce precipitation to beaker bottom and show that aluminium reacts completely.
The present invention carries out corrosion anatomy by chemical method to sample, removes the aluminium lamination of chip surface, observes below aluminium lamination
Silicon layer state judge the quality of bonding quality, detecting step is simple, detection result is good.
Embodiment
Below in conjunction with specific preferred embodiment, the invention will be further described, but not thereby limiting the invention
Protection domain.
Embodiment 1：
A kind of method for judging transistor bonding crater of the present invention, detecting step are：
1) it is 10% sodium hydroxide solution with mass fraction, is put into beaker, is heated to 70 DEG C；
2) sample being bonded is completely immersed in sodium hydroxide solution；
3) be bonded aluminium wire and chip surface aluminium react away completely after, take out, with alcohol washes it is clean after, in microscope
Observation；
4) whether the chip after observation cleaning, have damage in bonding point position, and by observation, there is damage in bonding point position,
Illustrate that the bonding of current bond sequence is problematic, it is necessary to adjust.
Embodiment 2：
A kind of method for judging transistor bonding crater of the present invention, detecting step are：
1) it is 10% sodium hydroxide solution with mass fraction, is put into beaker, is heated to 90 DEG C；
2) sample being bonded is completely immersed in sodium hydroxide solution；
3) be bonded aluminium wire and chip surface aluminium react away completely after, take out, with alcohol washes it is clean after, in microscope
Observation；
4) whether the chip after observation cleaning, have damage in bonding point position, by observing, bonding point position not damaged,
Illustrate that current bond sequence has no problem.
The present invention carries out corrosion anatomy by chemical method to sample, removes the aluminium lamination of chip surface, observes below aluminium lamination
Silicon layer state judge the quality of bonding quality, detecting step is simple, detection result is good.
The above is only the preferred embodiment of the present invention, and protection scope of the present invention is not limited merely to above-mentioned implementation
Example.All technical solutions belonged under thinking of the present invention belong to protection scope of the present invention.It is noted that for the art
Those of ordinary skill for, improvements and modifications without departing from the principle of the present invention, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (4)
- A kind of 1. method for judging transistor bonding crater, it is characterised in that detecting step is：1) match somebody with somebody sodium hydroxide solution, be put into beaker, heat；2) sample being bonded is completely immersed in sodium hydroxide solution；3) be bonded aluminium wire and chip surface aluminium react away completely after, take out, with alcohol washes it is clean after, seen in microscope Examine；4) whether the chip after observation cleaning, have damage in bonding point position, if damage, illustrates current bond sequence bonding It is problematic, it is necessary to adjust, such as not damaged, illustrates that current bond sequence bonding is problematic.
- A kind of 2. method for judging transistor bonding crater according to claim 1, it is characterised in that the step 1) hydrogen-oxygen It is 8%-16% to change sodium solution mass concentration.
- A kind of 3. method for judging transistor bonding crater according to claim 1, it is characterised in that the step 1) heating Temperature is 70-90 DEG C.
- 4. a kind of method for judging transistor bonding crater according to claim 1, it is characterised in that step 3) is according to step 2) sample determines the reaction time, and not producing precipitation to beaker bottom by reacting the sufficiently long time shows that aluminium is complete Reaction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711248944.0A CN107978538A (en) | 2017-12-01 | 2017-12-01 | A kind of method for judging transistor bonding crater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711248944.0A CN107978538A (en) | 2017-12-01 | 2017-12-01 | A kind of method for judging transistor bonding crater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107978538A true CN107978538A (en) | 2018-05-01 |
Family
ID=62009043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711248944.0A Pending CN107978538A (en) | 2017-12-01 | 2017-12-01 | A kind of method for judging transistor bonding crater |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107978538A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113964051A (en) * | 2021-10-15 | 2022-01-21 | 蓝芯存储技术(赣州)有限公司 | Non-destructive and odor-free crater experiment method |
| CN114062240A (en) * | 2021-11-26 | 2022-02-18 | 苏州日月新半导体有限公司 | Integrated circuit crater experimental method |
| CN115786917A (en) * | 2022-06-01 | 2023-03-14 | 东莞市通科电子有限公司 | Method for quickly corroding ball in chip crater detection process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1129492A (en) * | 1994-06-15 | 1996-08-21 | 精工爱普生株式会社 | Manufacturing method of thin film semiconductor device, thin film semiconductor device, liquid crystal display device, and electronic instrument |
| CN102359965A (en) * | 2011-07-05 | 2012-02-22 | 江苏捷捷微电子股份有限公司 | Process for detecting quality of copper ball bonding |
| CN106158690A (en) * | 2016-08-16 | 2016-11-23 | 南京矽邦半导体有限公司 | A kind of method in energy quick detection chip crater |
-
2017
- 2017-12-01 CN CN201711248944.0A patent/CN107978538A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1129492A (en) * | 1994-06-15 | 1996-08-21 | 精工爱普生株式会社 | Manufacturing method of thin film semiconductor device, thin film semiconductor device, liquid crystal display device, and electronic instrument |
| CN102359965A (en) * | 2011-07-05 | 2012-02-22 | 江苏捷捷微电子股份有限公司 | Process for detecting quality of copper ball bonding |
| CN106158690A (en) * | 2016-08-16 | 2016-11-23 | 南京矽邦半导体有限公司 | A kind of method in energy quick detection chip crater |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113964051A (en) * | 2021-10-15 | 2022-01-21 | 蓝芯存储技术(赣州)有限公司 | Non-destructive and odor-free crater experiment method |
| CN114062240A (en) * | 2021-11-26 | 2022-02-18 | 苏州日月新半导体有限公司 | Integrated circuit crater experimental method |
| CN115786917A (en) * | 2022-06-01 | 2023-03-14 | 东莞市通科电子有限公司 | Method for quickly corroding ball in chip crater detection process |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
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Application publication date: 20180501 |