CN107958838B - Method for improving in-plane uniformity of integrated etching process according to radio frequency hours - Google Patents
Method for improving in-plane uniformity of integrated etching process according to radio frequency hours Download PDFInfo
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- CN107958838B CN107958838B CN201711091683.6A CN201711091683A CN107958838B CN 107958838 B CN107958838 B CN 107958838B CN 201711091683 A CN201711091683 A CN 201711091683A CN 107958838 B CN107958838 B CN 107958838B
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- 238000005530 etching Methods 0.000 title claims abstract description 169
- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000000903 blocking effect Effects 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000004377 microelectronic Methods 0.000 claims abstract description 4
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 61
- 230000000694 effects Effects 0.000 description 5
- -1 activated oxygen ions Chemical class 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229940126214 compound 3 Drugs 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical class [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a method for improving the in-plane uniformity of an integrated etching process according to radio frequency hours, which is applied to the field of microelectronic manufacturing, wherein a supply pipeline for blocking etching gas is additionally arranged at the end of a machine station, a mass flow controller is arranged on the supply pipeline, and the blocking etching gas is supplied to an etching cavity under the control of the mass flow controller, and the method comprises the following steps: obtaining the relation between the radio frequency time and the etching rate of the etching cavity; acquiring the parameter relation between the radio frequency hours and the etching gas blocking; acquiring the current radio frequency hours, and determining the etching rate as a target value according to the current radio frequency hours; and stabilizing the etching rate to a target value by adjusting the parameters of the etching gas under the current radio frequency hours. Has the advantages that: the invention provides quantitative adjustment of etching gas parameters through the real-time feedback RF (radio frequency) time number of the etching cavity, so as to achieve the stability of the etching critical dimension and improve the in-plane uniformity of the integrally etched wafer.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for improving in-plane uniformity of an integrated etching process according to radio frequency hours.
Background
The etching process is one of the most critical processes in the manufacturing process of integrated circuits, and the main function of the etching process is to complete the final transfer and shaping of patterns in the photoetching process on a silicon wafer. Any drift in the etching process will cause drift in the final etched pattern structure and line width, which directly affects the electrical performance and yield of the product.
Disclosure of Invention
Aiming at the problems, the invention provides a method for improving the in-plane uniformity of an integrated etching process according to radio frequency hours, which is applied to the field of microelectronic manufacturing, wherein an etching gas supply pipeline is additionally arranged at the machine end, a mass flow controller is arranged on the supply pipeline, and etching gas is supplied to an etching cavity under the control of the mass flow controller, and the method comprises the following steps:
step S1, obtaining the relation between the RF hours and the etching rate of the etching cavity;
step S2, acquiring the parameter relation between the radio frequency hours and the gas supply quantity of the etching gas;
step S3, obtaining the current radio frequency time, obtaining the current etching rate according to the relation between the radio frequency time and the etching rate, and outputting the current etching rate as a target value;
step S4, stabilizing the etching rate to the target value by adjusting the parameter of the gas supply amount of the etching gas under the current rf time.
Wherein the relationship in step S1 is obtained by:
step S11, collecting the discrete values of the RF hours of the etching cavity and the etching rate in one-to-one correspondence in the etching process;
step S12, drawing a function curve of the relation according to the discrete value;
and step S13, fitting the function curve to obtain the relation function.
Wherein the relationship function is:
VRF＝F(RF)，
in the formula, VRFFor etch rate, RF is the RF hours of the etch chamber.
Wherein, the parameter relationship in the step 2 is obtained through the following steps:
step S21, obtaining a corresponding etching rate by changing the gas supply amount of the etching gas, and determining a first relation function of the etching rate and the gas supply amount of the etching gas;
step S22, obtaining a second relation function of the gas supply quantity of the etching gas to the blocking capacity of the etching rate according to the first relation function;
and step S23, determining the parameter relationship between the RF time of the etching chamber and the gas supply amount of the etching gas amount according to the second relationship function and the relationship between the RF time and the etching rate in the step S1.
Wherein the obtained first relation function is:
VRF＝F(Vqi (Qi))，
In the formula, VRFTo etch Rate, VQi (Qi)The amount of etching gas supplied.
Wherein the second relationship function is:
Vresistance device＝F(VQi (Qi))，
In the formula, VResistance deviceFor barrier of etching gasAbility, VQi (Qi)The amount of etching gas supplied.
The parameter relationship between the radio frequency time of the etching cavity and the etching gas quantity is as follows:
F(Vqi (Qi))＝F(RF)-VFixing device，
In the formula, VQi (Qi)The amount of etching gas supplied is RF, which is the RF hours of the etching chamber, VFixing deviceIs the target value of the etching speed.
Wherein the etching control gas is CF4Or C4F8。
Has the advantages that: the invention provides quantitative adjustment of etching gas parameters through the real-time feedback RF (radio frequency) time number of the etching cavity, so as to achieve the stability of the etching critical dimension and improve the in-plane uniformity of the integrated etching wafer, and the specific effect is shown in figures 4 and 5.
Drawings
FIG. 1 is a graph of etch uniformity monitoring trend within a prior art tool maintenance (PM) cycle;
FIG. 2 is a graph of prior art focus ring thickness as a function of RF hours in an etch chamber;
FIG. 3 is a graph of the change in etch rate with RF hours for an etch chamber in the prior art;
FIG. 4 is a diagram of a wafer etching pattern structure film thickness in the prior art;
FIG. 5 is a film thickness diagram of a wafer etching pattern structure according to the present invention;
FIG. 6 prior art etch Rate and C4F8A gas quantity relationship curve;
FIG. 7 RF hours and C for etching a chamber in the prior art4F8A gas quantity relationship curve;
FIG. 8 illustrates the working principle of etching gas in the prior art;
FIG. 9 is a flow chart of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
In a preferred embodiment, a method for improving the in-plane uniformity of an integrated etching process according to the radio frequency time is provided, which is applied to the field of microelectronic manufacturing, wherein a supply pipeline of etching gas is additionally arranged at a machine station end, a mass flow controller is arranged on the supply pipeline, and the etching gas is supplied to an etching chamber under the control of the mass flow controller, and the method comprises the following steps:
step S1, obtaining the relation between the RF hours and the etching rate of the etching cavity;
step S2, acquiring the parameter relation between the radio frequency hours and the gas supply quantity of the etching gas;
step S3, obtaining the current radio frequency hours, obtaining the current etching rate according to the relation between the current radio frequency hours and the etching rate, and outputting the current etching rate as a target value;
step S4, stabilizing the etching rate to the target value by adjusting the parameter of the gas supply amount of the etching gas under the current rf time.
In the technical scheme, the etching gas parameters are quantitatively adjusted according to the RF time number fed back by the etching cavity in real time, so that the stability of the etching critical dimension is achieved, the in-plane uniformity of the integrally etched wafer is improved, and the comparison effect is shown in fig. 4 and 5.
It is known that etch uniformity during an equipment maintenance cycle can deteriorate as the environment of the etch chamber drifts (see figure 1). By recording and plotting the thickness of the focusing ring in the etching chamber as a function of the RF hours of the etching chamber (see FIG. 2), we find that the thickness of the focusing ring decreases linearly as the RF hours of the etching chamber increases, and the etching speed increases linearly as the RF hours of the etching chamber increases (see FIG. 3).
By analyzing the above data, it can be known that as the RF time of the cavity increases, the thickness of the focusing ring in the cavity is continuously reduced due to the long-term bombardment of Plasma (Plasma), so that the focusing binding effect of the focusing ring on the Plasma is gradually weakened, and the Plasma tends to diffuse toward the periphery in the cavity. Meanwhile, the average etching rate of the chamber increases as the number of hours of the chamber increases. At this time, the difference between the etching speed of the peripheral area and the etching speed of the middle area of the wafer in the cavity becomes more obvious. As the etching rate of the peripheral region becomes higher, the in-plane etching uniformity of the wafer becomes worse.
In a preferred embodiment, with the use of C4F8The gas is taken as an example of an etching gas, and is further explained with reference to the flow shown in fig. 9.
In the above technical scheme, C is utilized4F8The principle of gas-integrated etching (as shown in fig. 8) is as follows: the activated oxygen ions 1 react with titanium of the titanium nitride hard mask layer to generate a titanium oxide compound 4; the titanium in the titanium oxide compound 4 is abstracted by the activated fluorine to generate an activated titanium fluoride compound 3; the activated titanium fluoride compound 3 will react with C4F8Reacting to generate a fluorine-containing polymer 2; the fluorine-containing polymer 2 has a barrier effect on etching and influences further etching of the film quality by etching plasma. Therefore, we can control C in the etching gas4F8The amount of the etching solution is controlled to achieve the purpose of controlling the etching rate, so that the in-plane uniformity of the integrally etched wafer is improved.
In a preferred embodiment, the RF hours of the etching chamber is first determined as a function of the etching rate. Through experiments, corresponding numerical values of the radio frequency time and the etching rate of the etching cavity in the etching process are collected. Then, a graph is drawn through the collected data. Finally, fitting a corresponding relation function according to the drawn graph:
VRF＝F(RF)，
in the formula, VRFFor etch rate, RF is the RF hours of the etch chamber.
Next, the RF hours are determined in relation to the parameters of the etching gas. First, by changing the amount of etching gas supplied, the corresponding etching rate is obtained, and the obtained data is fitted to determine the function of the relationship between the etching rate and the amount of etching gas supplied as shown in fig. 6. And secondly, obtaining a relation function of the gas supply amount of the etching gas to the blocking capacity of the etching rate according to the determined relation function of the etching rate and the gas supply amount of the etching gas. Finally, the relationship between the RF hours and the etching gas quantity of the etching chamber shown in FIG. 7 is determined by combining the relationship function of the gas supply quantity of the etching gas to the barrier capacity of the etching rate and the relationship between the RF hours and the etching rate of the etching chamber.
In the above technical solution, the relationship function between the etching rate and the gas supply amount of the etching gas is:
VRF＝F(Vqi (Qi))，
In the formula, VRFTo etch Rate, VQi (Qi)The amount of etching gas supplied.
The relationship function of the gas supply amount of the etching gas to the barrier ability of the etching rate is:
Vresistance device＝F(VQi (Qi))，
In the formula, VResistance deviceFor barrier capability of etching gas, VQi (Qi)The amount of etching gas supplied.
The relationship between the RF time of the etching chamber and the etching gas quantity is as follows:
F(Vqi (Qi))＝F(RF)-VFixing device，
In the formula, VQi (Qi)The amount of etching gas supplied is RF, which is the RF hours of the etching chamber, VFixing deviceIs the target value of the etching speed.
And then, acquiring the radio frequency time of the current cavity, and determining the gas supply amount of the etching gas according to the current radio frequency time.
In the above technical solution, the required etching rate needs to be determined in advance, and then the gas supply amount of the required etching gas is calculated according to the relationship between the radio frequency time of the etching chamber and the etching gas amount.
Next, under the current radio frequency time, the etching rate is stabilized by adjusting the gas supply amount of the etching gas, so as to achieve the stability of the etching critical dimension, thereby achieving the effect of improving the uniformity in the integrated etching wafer surface.
The etching gas in the technical scheme is not limited to C4F8Can also be applied to CF4Etc. other etching gases.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (7)
1. A method for improving the in-plane uniformity of an integrated etching process according to radio frequency hours is applied to the field of microelectronic manufacturing, and is characterized in that a supply pipeline of etching gas is additionally arranged at the end of a machine station, a mass flow controller is arranged on the supply pipeline, and the etching gas is supplied to an etching cavity under the control of the mass flow controller, and the method comprises the following steps:
step S1, obtaining the relation between the RF hours and the etching rate of the etching cavity;
step S2, acquiring the parameter relation between the radio frequency hours and the gas supply quantity of the etching gas;
step S3, obtaining the current radio frequency time, obtaining the current etching rate according to the relation between the radio frequency time and the etching rate, and outputting the current etching rate as a target value;
step S4, stabilizing the etching rate to the target value by adjusting the parameters of the gas supply quantity of the etching gas under the current radio frequency hours;
the parameter relationship in step S2 is obtained by:
step S21, obtaining a corresponding etching rate by changing the gas supply amount of the etching gas, and determining a first relation function of the etching rate and the gas supply amount of the etching gas;
step S22, obtaining a second relation function of the gas supply quantity of the etching gas to the blocking capacity of the etching rate according to the first relation function;
and step S23, determining the parameter relation between the RF hours of the etching chamber and the gas supply amount of the etching gas according to the second relation function and the relation between the RF hours and the etching rate in the step S1.
2. The method according to claim 1, wherein the relationship in the step S1 is obtained by:
step S11, collecting the discrete values of the RF hours of the etching cavity and the etching rate in one-to-one correspondence in the etching process;
step S12, drawing a function curve of the relation according to the discrete value;
and step S13, fitting the function curve to obtain a relation function.
3. The method of claim 2, wherein the relationship function is:
VRF＝F(RF),
in the formula, VRFFor etch rate, RF is the RF hours of the etch chamber.
4. The method according to claim 1, characterized in that the first relation function obtained is:
VRF＝F(Vqi (Qi)),
In the formula, VRFTo etch Rate, VQi (Qi)The amount of etching gas supplied.
5. The method of claim 1, wherein the second relationship function is:
Vresistance device＝F(VQi (Qi))，
In the formula, VResistance deviceFor barrier capability of etching gas, VQi (Qi)The amount of etching gas supplied.
6. The method of claim 1, wherein the parameter relationship between the RF time of the etching chamber and the supply amount of the etching gas is:
F(Vqi (Qi))＝F(RF)-VFixing device，
In the formula, VQi (Qi)The amount of etching gas supplied is RF, which is the RF hours of the etching chamber, VFixing deviceIs the target value of the etching speed.
7. The method of claim 1, wherein the etching gas is CF4Or C4F8。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11495602B1 (en) | 2021-08-12 | 2022-11-08 | Changxin Memory Technologies, Inc. | Method and device for determining fabrication chamber |
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| CN112185810B (en) * | 2020-09-29 | 2022-07-05 | 华虹半导体(无锡)有限公司 | Etching machine and method for improving working environment difference of different etching areas of etching machine |
| CN113140505B (en) * | 2021-03-18 | 2023-08-11 | 上海华力集成电路制造有限公司 | Method for manufacturing through hole |
| CN113658885B (en) * | 2021-08-12 | 2023-09-08 | 长鑫存储技术有限公司 | Method and device for determining preparation chamber |
| CN115910738B (en) * | 2022-11-01 | 2025-02-18 | 上海积塔半导体有限公司 | A method to adjust the uniformity of the Emax process chamber by changing the component size |
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| US7153709B1 (en) * | 2004-08-31 | 2006-12-26 | Advanced Micro Devices, Inc. | Method and apparatus for calibrating degradable components using process state data |
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