CN107955358A - A kind of special light LED material of optical electron and preparation method thereof - Google Patents

Abstract

The invention relates to a special light-emitting diode material for optical electronics and a preparation method thereof. The composition of the raw materials is composed of the following proportions in parts by weight: 10-15 parts of polycarbonate, 3-5 parts of polypropylene, and 4-6 parts of gallium arsenide , 5-7 parts of gallium phosphide, 4-5 parts of gallium arsenide phosphide, 4-6 parts of nano-fiber, 10-15 parts of epoxy resin, 3-5 parts of polyoxyethylene polyoxypropanolamine ether, 3 parts of acid ‑4 parts, 2‑3 parts of release agent, 2‑3 parts of magnesium hydroxide, 2‑4 parts of white carbon black, 20‑30 parts of ethanol. The material of the present invention is easy to obtain, low in cost, environmentally friendly and safe, low in structure density, strong in curing effect, good in compression resistance, strong in wear resistance, high in electric energy conversion rate, good in luminous effect, can present beams of various colors, and is durable High temperature and high pressure, insulation and flame retardant, waterproof and moisture-proof, stable chemical properties, extended service life, wide application range, recyclable, improve comprehensive economic benefits, and protect environmental hygiene.

Description

A light-emitting diode material for optical electronics and its preparation method

technical field

The invention relates to the field of electronic optical materials, in particular to a light-emitting diode material dedicated to optical electronics and a preparation method thereof.

Background technique

With the development of society, the development of electron optics is very rapid. Not only has the optical conversion rate been greatly improved, but also there has been a great breakthrough in the matching materials. The existing technology of light-emitting diode materials is also constantly improving. Improvement, as far as the current situation is concerned, due to the insignificant thermal stability of the material of the light-emitting diode, oxidation and other phenomena are prone to occur, resulting in a reduction in the flame-retardant effect, thereby reducing work efficiency.

Contents of the invention

The object of the present invention is to provide a light-emitting diode material for optical electronics and a preparation method thereof in order to overcome the above disadvantages.

The technical scheme of the present invention includes: a special light-emitting diode material for optical electronics and its preparation method, the raw material components are composed of the following proportions in parts by weight: 10-15 parts of polycarbonate, 3-5 parts of polypropylene, gallium arsenide 4-6 parts, 5-7 parts of gallium phosphide, 4-5 parts of gallium arsenide phosphide, 4-6 parts of nanofiber, 10-15 parts of epoxy resin, 3-5 parts of polyoxyethylene polyoxypropanolamine ether , 3-4 parts of acid, 2-3 parts of release agent, 2-3 parts of magnesium hydroxide, 2-4 parts of white carbon black, 20-30 parts of ethanol.

The further improvement of the present invention is: its preparation method is as follows:

A. Stir gallium arsenide, gallium phosphide and gallium arsenide phosphide evenly at a stirring rate of 380-420r/min, put them into the reaction kettle and add nano-fibers for high-temperature polycondensation, with an appropriate amount of ethanol as a solvent, and a pressure of 1.5- 1.8MPa, set the temperature at 380-420°C, use white carbon black as the catalyst, and obtain mixture A after 20-30min;

B. Polymerize polycarbonate, polypropylene and epoxy resin, set the temperature at 220-240°C, pressure at 1.3-1.5MPa, cool to 65-80°C after 15-20min, then add polyoxyethylene poly Oxypropanolamine ether, acid anhydride, release agent and magnesium hydroxide are stirred at a stirring rate of 480-540r/min to obtain mixture B;

C. Put the mixture B into the mold, then soak the mixture A in it, soak it for 2-3 hours, remove the mold, put it into the dryer for drying treatment, the drying temperature is 200-220°C, and squeeze it, Forging, with a force of 180-200N/cm ² , to obtain a product.

Beneficial effects of the present invention: the material of the present invention is easy to obtain, low in cost, environmentally safe, small in structure density, strong in curing effect, good in compressive capacity, strong in wear resistance, high in electric energy conversion rate, improves work efficiency, and has good luminous effect , can present a variety of colors of light beams, high temperature and high pressure resistance, insulation and flame retardant, waterproof and moisture-proof, stable chemical properties, extended service life, wide application range, recyclable, improve comprehensive economic benefits, and protect environmental sanitation.

Detailed ways:

In order to deepen the understanding of the present invention, the present invention will be further described below in conjunction with examples, which are only used to explain the present invention and do not constitute a limitation to the protection scope of the present invention.

Example 1

A special light-emitting diode material for optical electronics and a preparation method thereof. The raw materials are composed of the following proportions in parts by weight: 13 parts of polycarbonate, 4 parts of polypropylene, 5 parts of gallium arsenide, 6 parts of gallium phosphide, and phosphorous arsenic 5 parts of gallium chloride, 5 parts of nanofiber, 12 parts of epoxy resin, 4 parts of polyoxyethylene polyoxypropanolamine ether, 3 parts of acid, 2 parts of release agent, 3 parts of magnesium hydroxide, 3 parts of white carbon black , 22 parts of ethanol.

Its preparation method is as follows:

A. Stir gallium arsenide, gallium phosphide and gallium arsenide phosphide evenly at a stirring rate of 390r/min, put them into the reaction kettle and add nano-fibers for high-temperature polycondensation, appropriate amount of ethanol as solvent, pressure 1.6MPa, temperature Set at 400°C, use white carbon black as catalyst, and obtain mixture A after 24 minutes;

B. Polymerize polycarbonate, polypropylene and epoxy resin, set the temperature at 230°C, and the pressure at 1.4MPa. After cooling to 75°C after 18 minutes, add polyoxyethylene polyoxypropanolamine ether, acid anhydride, Release agent and magnesium hydroxide are stirred, and stirring speed is 530r/min, obtains mixture B;

C. Put the mixture B into the mold, then soak the mixture A in it, remove the mold after soaking for 2.5 hours, put it into the dryer for drying treatment, the drying temperature is 210°C, extrude and forge it, and The force was 1950 N/cm ² and the product was obtained.

Example 2

A special light-emitting diode material for optical electronics and a preparation method thereof. The raw materials are composed of the following proportions in parts by weight: 15 parts of polycarbonate, 3 parts of polypropylene, 6 parts of gallium arsenide, 5 parts of gallium phosphide, and phosphorus arsenic 5 parts of gallium chloride, 4 parts of nano-fiber, 15 parts of epoxy resin, 3 parts of polyoxyethylene polyoxypropanolamine ether, 4 parts of acid alcohol, 2 parts of release agent, 3 parts of magnesium hydroxide, 2 parts of white carbon black , 30 parts of ethanol.

Its preparation method is as follows:

A. Stir gallium arsenide, gallium phosphide and gallium arsenide phosphide evenly at a stirring rate of 420r/min, put them into the reaction kettle and add nano-fibers for high-temperature polycondensation, appropriate amount of ethanol as solvent, pressure 1.5MPa, temperature Set at 420°C, use white carbon black as catalyst, and obtain mixture A after 20 minutes;

B. Polymerize polycarbonate, polypropylene and epoxy resin, set the temperature at 240°C, and the pressure at 1.3MPa. After cooling to 65°C after 20 minutes, add polyoxyethylene polyoxypropanolamine ether, acid anhydride, Release agent and magnesium hydroxide are stirred, and stirring speed is 540r/min, obtains mixture B;

C. Put the mixture B into the mold, then soak the mixture A in it, remove the mold after soaking for 2 hours, put it into the dryer for drying treatment, the drying temperature is 220°C, squeeze it, forge it, and force it It was 180N/cm ² , and the product was obtained.

Example 3

A special light-emitting diode material for optical electronics and a preparation method thereof. The raw material components are composed of the following proportions in parts by weight: 10 parts of polycarbonate, 5 parts of polypropylene, 4 parts of gallium arsenide, 7 parts of gallium phosphide, and phosphorus arsenic 4 parts of gallium chloride, 6 parts of nano-fiber, 10 parts of epoxy resin, 5 parts of polyoxyethylene polyoxypropanolamine ether, 3 parts of acid liquor, 3 parts of release agent, 2 parts of magnesium hydroxide, 4 parts of white carbon black , 20 parts of ethanol.

Its preparation method is as follows:

A. Stir gallium arsenide, gallium phosphide and gallium arsenide phosphide evenly at a stirring rate of 380r/min, put them into the reaction kettle and add nano-fibers for high-temperature polycondensation, appropriate amount of ethanol as solvent, pressure 1.8MPa, temperature Set at 380°C, use white carbon black as catalyst, and obtain mixture A after 30 minutes;

B. Polymerize polycarbonate, polypropylene and epoxy resin, set the temperature at 220°C, and the pressure at 1.5MPa. After cooling to 80°C after 15 minutes, add polyoxyethylene polyoxypropanolamine ether, acid anhydride, Release agent and magnesium hydroxide are stirred, and stirring rate is 480r/min, obtains mixture B;

C. Put the mixture B into the mold, then soak the mixture A in it, remove the mold after soaking for 3 hours, put it into the dryer for drying treatment, the drying temperature is 200°C, squeeze it, forge it, and press it 200N/cm ² , the product was obtained.

Example 4

A special light-emitting diode material for optical electronics and a preparation method thereof. The raw material components are composed of the following proportions in parts by weight: 14 parts of polycarbonate, 5 parts of polypropylene, 5 parts of gallium arsenide, 6 parts of gallium phosphide, and phosphorous arsenic 4 parts of gallium chloride, 5 parts of nano-fiber, 13 parts of epoxy resin, 4 parts of polyoxyethylene polyoxypropanolamine ether, 3 parts of acid, 2 parts of release agent, 3 parts of magnesium hydroxide, 3 parts of white carbon black , 28 parts of ethanol.

Its preparation method is as follows:

A. Stir gallium arsenide, gallium phosphide and gallium arsenide phosphide evenly at a stirring rate of 390r/min, put them into the reaction kettle and add nano-fibers for high-temperature polycondensation, appropriate amount of ethanol as solvent, pressure 1.7MPa, temperature Set at 400°C, use white carbon black as catalyst, and obtain mixture A after 26 minutes;

B. Polycarbonate, polypropylene and epoxy resin are polymerized, the temperature is set at 230°C, the pressure is 1.4MPa, and after cooling to 75°C after 19 minutes, polyoxyethylene polyoxypropanolamine ether, acid anhydride, Release agent and magnesium hydroxide are stirred, and stirring speed is 510r/min, obtains mixture B;

C. Put the mixture B into the mold, then soak the mixture A in it, remove the mold after soaking for 2 hours, put it into the dryer for drying treatment, the drying temperature is 215°C, squeeze it, forge it, and force it It was 195 N/cm ² , and the product was obtained.

Among the above embodiments, embodiment 4 is the best embodiment, which has a strong wear resistance effect, and the stability and compression resistance of the structure can be enhanced through modification.

The above is only to illustrate the implementation of the present invention, and is not intended to limit the present invention. For those skilled in the art, any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention, All should be included within the protection scope of the present invention.

Claims (2)

1. A kind of 1. special light LED material of optical electron and preparation method thereof, it is characterised in that：Raw material constituent is by weight Amount number is made of following ratio：10-15 parts of makrolon, 3-5 parts of polypropylene, 4-6 parts of GaAs, 5-7 parts of gallium phosphide, phosphorus arsenic Change 4-5 part of gallium, 4-6 parts of nano optical fibers, 10-15 parts of epoxy resin, 3-5 parts of polyoxyethylene polyoxy propyl alcohol amidogen ether, it is intoxicated 3-4 parts sour, 2-3 parts of release agent, 2-3 parts of magnesium hydroxide, 2-4 parts of white carbon, 20-30 parts of ethanol.
2. 2. special light LED material of a kind of optical electron according to claim 1 and preparation method thereof, its feature exists In：Its preparation method is as follows：

   A, GaAs, gallium phosphide and gallium arsenide phosphide are stirred uniformly, stir speed (S.S.) 380-420r/min, are put into anti- Answer and nano optical fibers are added in kettle carry out high-temperature polycondensation, ethanol in proper amount is solvent, pressure 1.5-1.8MPa, and temperature is set to 380- 420 DEG C, using white carbon as catalyst, mixture A is obtained after 20-30min；

   B, makrolon, polypropylene and epoxy resin are subjected to polymerisation, temperature is set to 220-240 DEG C, pressure 1.3- When 1.5MPa, 15-20min postcooling are to 65-80 DEG C, polyoxyethylene polyoxy propyl alcohol amidogen ether, acid anhydrides, release agent and hydrogen are sequentially added Magnesia is stirred, and stir speed (S.S.) 480-540r/min, obtains mixture B；

   C, mixture B is put into mould, then by mixture A immersions wherein, is demoulded after soaking 2-3h, put into dryer Drying and processing is carried out, drying temperature is 200-220 DEG C, is extruded, forged, stress 180-200N/cm², obtain product.