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CN107947781A - A kind of active diode of adaptive conducting resistance - Google Patents

A kind of active diode of adaptive conducting resistance Download PDF

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Publication number
CN107947781A
CN107947781A CN201711137122.5A CN201711137122A CN107947781A CN 107947781 A CN107947781 A CN 107947781A CN 201711137122 A CN201711137122 A CN 201711137122A CN 107947781 A CN107947781 A CN 107947781A
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pmos transistor
electrically connected
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comparator
driving circuit
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CN107947781B (en
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刘帘曦
成江伟
华天源
朱樟明
杨银堂
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Xidian University
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/017509Interface arrangements

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Abstract

本发明属于集成电路设计技术领域,涉及一种自适应导通电阻的有源二极管。所述自适应导通电阻的有源二极管包括开关管模块、比较器模块和逻辑与控制单元模块;所述开关管模块的输出端电连接所述比较器模块的输入端;所述比较器模块的输出端电连接所述逻辑与控制单元模块的输入端;所述逻辑与控制单元模块的输出端电连接所述开关管模块的输入端。该有源二极管导通电阻的自适应变化能够提升有源二极管电流过零点的检测精度,拓宽有源二极管的输入范围,实现一种低导通电压降、高精度电流过零点检测、宽输入范围的有源二极管。

The invention belongs to the technical field of integrated circuit design and relates to an active diode with self-adaptive on-resistance. The active diode of the adaptive on-resistance includes a switching tube module, a comparator module and a logic and control unit module; the output terminal of the switching tube module is electrically connected to the input terminal of the comparator module; the comparator module The output end of the logic and control unit module is electrically connected to the input end of the logic and control unit module; the output end of the logic and control unit module is electrically connected to the input end of the switch tube module. The adaptive change of the on-resistance of the active diode can improve the detection accuracy of the zero-crossing point of the active diode current, broaden the input range of the active diode, and realize a low-on-state voltage drop, high-precision current zero-crossing detection, and a wide input range. active diodes.

Description

一种自适应导通电阻的有源二极管An Active Diode with Adaptive On-Resistance

技术领域technical field

本发明属于集成电路设计技术领域,涉及一种自适应导通电阻的有源二极管。The invention belongs to the technical field of integrated circuit design and relates to an active diode with self-adaptive on-resistance.

背景技术Background technique

近年来,无线传感器网络节点、生物医疗电子设备成为人们热门的研究课题,传统的电池供电受限于电池体积和电池寿命,制约着电子设备的小型化发展并限制了电子设备的续航能力。电子设备的自供电,即捕获环境中的能量并将其转化为电能进行供电几乎是未来的可持续供电技术的最佳选择。自然界中存在着丰富的能量源,比如:热电源、射频源、光伏源、压电源等,其中,压电源相比其他形式的能量源受自然条件限制较小,并且具有较高的能量密度、易于拓展,因此基于压电源的能量获取技术方案备受青睐。In recent years, wireless sensor network nodes and biomedical electronic devices have become popular research topics. The traditional battery power supply is limited by battery volume and battery life, which restricts the miniaturization of electronic devices and limits the battery life of electronic devices. Self-powering of electronic devices, that is, capturing the energy in the environment and converting it into electrical energy for power supply is almost the best choice for future sustainable power supply technology. There are abundant energy sources in nature, such as thermal power sources, radio frequency sources, photovoltaic sources, piezoelectric sources, etc. Among them, piezoelectric sources are less restricted by natural conditions than other forms of energy sources, and have higher energy density, It is easy to expand, so the energy harvesting technology solution based on the piezoelectric source is favored.

通常压电传感器捕获周围环境的振动能量,将振动能转化为电能,但压电传感器的输出电能通常为一个交流源,并不能直接给电子设备供电,因此在给电子设备供电前需要一个整流接口电路。整流接口电路主要利用二极管的单向导电性,因此所采用二极管的性能对整流器性能的影响至关重要。传统的肖特基二极管的导通电压降较高,二极管的导通损耗较大,因而整流效率受到严重影响,且较大的二极管导通电压降也限制了整流接口电路的输入范围。Usually piezoelectric sensors capture the vibration energy of the surrounding environment and convert the vibration energy into electrical energy, but the output electrical energy of piezoelectric sensors is usually an AC source, which cannot directly supply power to electronic equipment, so a rectifier interface is required before powering electronic equipment circuit. The rectification interface circuit mainly utilizes the unidirectional conductivity of the diode, so the performance of the diode used has an important influence on the performance of the rectifier. The conduction voltage drop of traditional Schottky diodes is high, and the conduction loss of the diode is large, so the rectification efficiency is seriously affected, and the large diode conduction voltage drop also limits the input range of the rectification interface circuit.

为此,一种基于比较器的有源二极管被提出来,有源二极管的导通电压降减少,整流效率有所提升,然而受限于比较器的输入精度,有源二极管电流的过零点检测精度较低,因而基于有源二极管的整流接口电路的输入范围仍受到一定限制。For this reason, an active diode based on a comparator is proposed. The conduction voltage drop of the active diode is reduced, and the rectification efficiency is improved. However, limited by the input accuracy of the comparator, the zero-crossing detection of the active diode current The accuracy is low, so the input range of the rectification interface circuit based on the active diode is still limited.

发明内容Contents of the invention

为了解决现有技术中存在的问题,本发明提出一种自适应导通电阻的有源二极管。In order to solve the problems in the prior art, the present invention proposes an active diode with adaptive on-resistance.

具体地,本发明的一个实施例提供了一种自适应导通电阻的有源二极管,包括:Specifically, an embodiment of the present invention provides an active diode with adaptive on-resistance, including:

开关管模块101、比较器模块102和逻辑与控制单元模块103;其中,Switch tube module 101, comparator module 102 and logic and control unit module 103; Wherein,

所述开关管模块101的输出端电连接所述比较器模块102的输入端;The output terminal of the switch tube module 101 is electrically connected to the input terminal of the comparator module 102;

所述比较器模块102的输出端电连接所述逻辑与控制单元模块103的输入端;The output end of the comparator module 102 is electrically connected to the input end of the logic and control unit module 103;

所述逻辑与控制单元模块103的输出端电连接所述开关管模块101的输入端。The output terminal of the logic and control unit module 103 is electrically connected to the input terminal of the switch tube module 101 .

在本发明的一个实施例中,所述开关管模块101包括第一PMOS晶体管MP1、第二PMOS晶体管MP2、第三PMOS晶体管MP3、第四PMOS晶体管MP4、第五PMOS晶体管MP5、第六PMOS晶体管MP6以及第七PMOS晶体管MP7;其中,In one embodiment of the present invention, the switching tube module 101 includes a first PMOS transistor MP1, a second PMOS transistor MP2, a third PMOS transistor MP3, a fourth PMOS transistor MP4, a fifth PMOS transistor MP5, a sixth PMOS transistor MP6 and the seventh PMOS transistor MP7; wherein,

所述第一PMOS晶体管MP1的源极分别电连接所述第二PMOS晶体管MP2的源极、所述第三PMOS晶体管MP3的源极、所述第四PMOS晶体管MP4的源极、所述第五PMOS晶体管MP5的源极、所述第六PMOS晶体管MP6的源极以及所述第七PMOS晶体管MP7的栅极;The source of the first PMOS transistor MP1 is electrically connected to the source of the second PMOS transistor MP2, the source of the third PMOS transistor MP3, the source of the fourth PMOS transistor MP4, the fifth the source of the PMOS transistor MP5, the source of the sixth PMOS transistor MP6, and the gate of the seventh PMOS transistor MP7;

所述第一PMOS晶体管MP1的漏极分别电连接所述第二PMOS晶体管MP2的漏极、所述第三PMOS晶体管MP3的漏极、所述第四PMOS晶体管MP4的漏极、所述第五PMOS晶体管MP5的漏极、所述第七PMOS晶体管MP7的漏极以及所述第六PMOS晶体管MP6的栅极;The drain of the first PMOS transistor MP1 is electrically connected to the drain of the second PMOS transistor MP2, the drain of the third PMOS transistor MP3, the drain of the fourth PMOS transistor MP4, the fifth the drain of the PMOS transistor MP5, the drain of the seventh PMOS transistor MP7, and the gate of the sixth PMOS transistor MP6;

所述第一PMOS晶体管MP1的衬底分别电连接所述第二PMOS晶体管MP2的衬底、所述第三PMOS晶体管MP3的衬底、所述第四PMOS晶体管MP4的衬底、所述第五PMOS晶体管MP5的衬底、所述第六PMOS晶体管MP6的漏极与衬底以及所述第七PMOS晶体管MP7的源极与衬底;The substrate of the first PMOS transistor MP1 is electrically connected to the substrate of the second PMOS transistor MP2, the substrate of the third PMOS transistor MP3, the substrate of the fourth PMOS transistor MP4, the substrate of the fifth a substrate of the PMOS transistor MP5, a drain and a substrate of the sixth PMOS transistor MP6, and a source and a substrate of the seventh PMOS transistor MP7;

所述第一PMOS晶体管MP1的栅极、所述第二PMOS晶体管MP2的栅极、所述第三PMOS晶体管MP3的栅极、所述第四PMOS晶体管MP4的栅极、所述第五PMOS晶体管MP5的栅极分别电连接所述逻辑与控制单元模块103的输出端;The gate of the first PMOS transistor MP1, the gate of the second PMOS transistor MP2, the gate of the third PMOS transistor MP3, the gate of the fourth PMOS transistor MP4, the gate of the fifth PMOS transistor The gate of MP5 is electrically connected to the output end of the logic and control unit module 103 respectively;

所述第一PMOS晶体管MP1的源极作为所述开关管模块101的阳极端ANODE电连接所述比较器模块102的正输入端,所述第一PMOS晶体管MP1的漏极作为所述开关管模块101的阴极端CATHODE电连接所述比较器模块102的负输入端。The source of the first PMOS transistor MP1 is used as the anode terminal ANODE of the switch tube module 101 and is electrically connected to the positive input terminal of the comparator module 102, and the drain of the first PMOS transistor MP1 is used as the switch tube module The cathode terminal CATHODE of 101 is electrically connected to the negative input terminal of the comparator module 102 .

在本发明的一个实施例中,所述比较器模块102包括第一比较器COMP1和第二比较器COMP2;其中,In one embodiment of the present invention, the comparator module 102 includes a first comparator COMP1 and a second comparator COMP2; wherein,

所述第一比较器COMP1的正输入端电连接所述开关管模块101的阳极端ANODE,负输入端电连接所述开关管模块101的阴极端CATHODE,输出端电连接所述逻辑与控制单元模块103的第一输入端;The positive input terminal of the first comparator COMP1 is electrically connected to the anode terminal ANODE of the switching tube module 101, the negative input terminal is electrically connected to the cathode terminal CATHODE of the switching tube module 101, and the output terminal is electrically connected to the logic and control unit a first input of the module 103;

所述第二比较器COMP2的正输入端电连接所述开关管模块101的阳极端ANODE,其负输入端电连接所述开关管模块101的阴极端CATHODE,其输出端电连接所述逻辑与控制单元模块103的第二输入端。The positive input terminal of the second comparator COMP2 is electrically connected to the anode terminal ANODE of the switching tube module 101, its negative input terminal is electrically connected to the cathode terminal CATHODE of the switching tube module 101, and its output terminal is electrically connected to the logic AND The second input terminal of the control unit module 103 .

在本发明的一个实施例中,所述逻辑与控制单元模块103包括时钟信号逻辑电路I1、计数器I2、译码器I3、驱动电路模块I4;其中,In one embodiment of the present invention, the logic and control unit module 103 includes a clock signal logic circuit I1, a counter I2, a decoder I3, and a driving circuit module I4; wherein,

所述时钟信号逻辑电路I1的输入端电连接所述比较器模块102的输出端;所述计数器I2的输入端电连接所述时钟信号逻辑电路I1的输出端;所述译码器I3的输入端电连接所述计数器I2的输出端;所述驱动电路模块I4的输入端电连接所述译码器I3的输出端,且所述驱动电路模块I4的输出端电连接所述开关管模块101的输入端。The input end of the clock signal logic circuit I1 is electrically connected to the output end of the comparator module 102; the input end of the counter I2 is electrically connected to the output end of the clock signal logic circuit I1; the input of the decoder I3 terminal is electrically connected to the output terminal of the counter I2; the input terminal of the drive circuit module I4 is electrically connected to the output terminal of the decoder I3, and the output terminal of the drive circuit module I4 is electrically connected to the switching tube module 101 input terminal.

在本发明的一个实施例中,所述时钟信号逻辑电路I1的第一输入端VO1电连接所述比较器模块102的第一输出端,第二输入端VO2电连接所述比较器模块102的第二输出端。In an embodiment of the present invention, the first input terminal VO1 of the clock signal logic circuit I1 is electrically connected to the first output terminal of the comparator module 102, and the second input terminal VO2 is electrically connected to the first output terminal of the comparator module 102. the second output.

在本发明的一个实施例中,所述计数器I2的时钟信号输入端CLK2电连接所述时钟信号逻辑电路I1的时钟信号输出端CLK1,所述计数器I2的加减计数控制端VADDSUB2电连接所述时钟信号逻辑电路I1的加减计数控制输出端VADDSUB1,所述计数器I2的清零输入端RST2电连接所述时钟信号逻辑电路I1的清零输出端RST1。In one embodiment of the present invention, the clock signal input terminal CLK2 of the counter I2 is electrically connected to the clock signal output terminal CLK1 of the clock signal logic circuit I1, and the addition and subtraction counting control terminal V ADDSUB2 of the counter I2 is electrically connected to the The addition and subtraction counting control output terminal V ADDSUB1 of the clock signal logic circuit I1, the reset input terminal RST2 of the counter I2 is electrically connected to the reset output terminal RST1 of the clock signal logic circuit I1.

在本发明的一个实施例中,所述计数器I2为3位计数器且所述译码器I3为3_5译码器;其中,所述3位计数器的第一输出端QA1电连接所述3_5译码器的第一输入端QA2;所述3位计数器的第二输出端QB1电连接所述3_5译码器的第二输入端QB2相接;所述3位计数器的第三输出端QC1电连接所述3_5译码器的第三输入端QC2。In one embodiment of the present invention, the counter I2 is a 3-bit counter and the decoder I3 is a 3_5 decoder; wherein, the first output terminal QA1 of the 3-bit counter is electrically connected to the 3_5 decoder The first input terminal QA2 of the device; the second output terminal QB1 of the 3-bit counter is electrically connected to the second input terminal QB2 of the 3-5 decoder; the third output terminal QC1 of the 3-bit counter is electrically connected to the The third input terminal QC2 of the 3_5 decoder.

在本发明的一个实施例中,所述驱动电路模块I4包括第一驱动电路D1、第二驱动电路D2、第三驱动电路D3、第四驱动电路D4、第五驱动电路D5;其中,所述第一驱动电路D1、所述第二驱动电路D2、所述第三驱动电路D3、所述第四驱动电路D4、所述第五驱动电路D5的输入端分别电连接所述3_5译码器的5个输出端,所述第一驱动电路D1、所述第二驱动电路D2、所述第三驱动电路D3、所述第四驱动电路D4、所述第五驱动电路D5的输出端分别电连接所述开关管模块101的输入端。In one embodiment of the present invention, the driving circuit module I4 includes a first driving circuit D1, a second driving circuit D2, a third driving circuit D3, a fourth driving circuit D4, and a fifth driving circuit D5; wherein, the The input terminals of the first drive circuit D1, the second drive circuit D2, the third drive circuit D3, the fourth drive circuit D4, and the fifth drive circuit D5 are electrically connected to the 3-5 decoder respectively. 5 output terminals, the output terminals of the first drive circuit D1, the second drive circuit D2, the third drive circuit D3, the fourth drive circuit D4, and the fifth drive circuit D5 are electrically connected respectively The input end of the switch tube module 101 .

与现有技术相比,本发明的有益效果在于:Compared with prior art, the beneficial effect of the present invention is:

1、在一个很宽的输入电流范围下,利用比较器模块和逻辑与控制单元模块,实现有源二极管的导通电阻的动态变化,可以有效地控制和减小有源二极管的导通电压降,从而减少有源二极管的导通损耗。1. Under a wide input current range, using the comparator module and the logic and control unit module, the dynamic change of the on-resistance of the active diode can be realized, which can effectively control and reduce the on-voltage drop of the active diode , thereby reducing the conduction loss of the active diode.

2、本发明的自适应导通电阻的有源二极管在不提升比较器输入精度的提前下,可以有效地提升有源二极管电流的过零点检测精度。2. The active diode with adaptive on-resistance of the present invention can effectively improve the zero-crossing detection accuracy of the active diode current without increasing the input accuracy of the comparator.

3、本发明的自适应导通电阻的有源二极管的电流过零点检测精度的提升有效地拓宽了有源二极管的输入范围。3. The improvement of the current zero-crossing detection accuracy of the active diode of the adaptive on-resistance of the present invention effectively widens the input range of the active diode.

附图说明Description of drawings

为了更清楚地说明本发明实施例的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For Those of ordinary skill in the art can also obtain other drawings based on these drawings without making creative efforts.

图1是本发明实施例提供的一种自适应导通电阻的有源二极管的逻辑示意图;FIG. 1 is a logical schematic diagram of an active diode with adaptive on-resistance provided by an embodiment of the present invention;

图2是本发明实施例提供的一种开关管模块的结构示意图;Fig. 2 is a schematic structural diagram of a switch tube module provided by an embodiment of the present invention;

图3是本发明实施例提供的一种比较器模块的结构示意图;FIG. 3 is a schematic structural diagram of a comparator module provided by an embodiment of the present invention;

图4是本发明实施例提供的一种逻辑与控制单元模块的结构示意图;Fig. 4 is a schematic structural diagram of a logic and control unit module provided by an embodiment of the present invention;

图5是本发明实施例提供的一种自适应导通电阻的有源二极管的电路示意图;5 is a schematic circuit diagram of an active diode with adaptive on-resistance provided by an embodiment of the present invention;

图6是本发明实施例提供的一种自适应导通电阻的有源二极管在一个宽输入电流变化范围内的工作原理图;Fig. 6 is a working principle diagram of an active diode with adaptive on-resistance provided by an embodiment of the present invention within a wide input current variation range;

图7是本发明实施例提供的一种自适应导通电阻的有源二极管在各个阶段对应的开关管工作状态说明图。FIG. 7 is an explanatory diagram of the working states of the switching tubes corresponding to each stage of an active diode with adaptive on-resistance provided by an embodiment of the present invention.

具体实施方式Detailed ways

为了使本发明要解决的技术问题、技术方案和优点更加清楚,下面将结合附图及具体实施例进行详细描述。In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

实施例一:Embodiment one:

参见图1,图1是本发明实施例提供的一种自适应导通电阻的有源二极管的逻辑示意图。所述自适应导通电阻的有源二极管,包括:开关管模块101、比较器模块102和逻辑与控制单元模块103;其中,Referring to FIG. 1 , FIG. 1 is a logical schematic diagram of an active diode with adaptive on-resistance provided by an embodiment of the present invention. The active diode of the adaptive on-resistance includes: a switching tube module 101, a comparator module 102 and a logic and control unit module 103; wherein,

开关管模块101输出端电连接比较器模块102的输入端,用于根据逻辑与控制单元模块103的输出信号改变导通路径并限制电流流动方向;The output terminal of the switch tube module 101 is electrically connected to the input terminal of the comparator module 102, which is used to change the conduction path and limit the current flow direction according to the output signal of the logic and control unit module 103;

比较器模块102的输出端电连接逻辑与控制单元模块103的输入端,用于生成作用于逻辑与控制单元模块103的驱动信号;The output end of the comparator module 102 is electrically connected to the input end of the logic and control unit module 103 for generating a driving signal acting on the logic and control unit module 103;

逻辑与控制单元模块103的输出端电连接开关管模块101,用于通过其输出信号控制开关管模块101中各晶体管的工作状态。The output terminal of the logic and control unit module 103 is electrically connected to the switching tube module 101 for controlling the working state of each transistor in the switching tube module 101 through its output signal.

进一步地,请参见图2,图2是本发明实施例提供的一种开关管模块的电路示意图。开关管模块101包括第一PMOS晶体管MP1、第二PMOS晶体管MP2、第三PMOS晶体管MP3、第四PMOS晶体管MP4、第五PMOS晶体管MP5、第六PMOS晶体管MP6以及第七PMOS晶体管MP7;其中,Further, please refer to FIG. 2 , which is a schematic circuit diagram of a switching tube module provided by an embodiment of the present invention. The switching tube module 101 includes a first PMOS transistor MP1, a second PMOS transistor MP2, a third PMOS transistor MP3, a fourth PMOS transistor MP4, a fifth PMOS transistor MP5, a sixth PMOS transistor MP6 and a seventh PMOS transistor MP7; wherein,

第一PMOS晶体管MP1的源极分别电连接第二PMOS晶体管MP2的源极、第三PMOS晶体管MP3的源极、第四PMOS晶体管MP4的源极、第五PMOS晶体管MP5的源极、第六PMOS晶体管MP6的源极以及第七PMOS晶体管MP7的栅极;The source of the first PMOS transistor MP1 is electrically connected to the source of the second PMOS transistor MP2, the source of the third PMOS transistor MP3, the source of the fourth PMOS transistor MP4, the source of the fifth PMOS transistor MP5, and the source of the sixth PMOS transistor MP5. the source of the transistor MP6 and the gate of the seventh PMOS transistor MP7;

第一PMOS晶体管MP1的漏极分别电连接第二PMOS晶体管MP2的漏极、第三PMOS晶体管MP3的漏极、第四PMOS晶体管MP4的漏极、第五PMOS晶体管MP5的漏极、第七PMOS晶体管MP7的漏极以及第六PMOS晶体管MP6的栅极;The drain of the first PMOS transistor MP1 is electrically connected to the drain of the second PMOS transistor MP2, the drain of the third PMOS transistor MP3, the drain of the fourth PMOS transistor MP4, the drain of the fifth PMOS transistor MP5, and the drain of the seventh PMOS transistor MP5. the drain of the transistor MP7 and the gate of the sixth PMOS transistor MP6;

第一PMOS晶体管MP1的衬底分别电连接第二PMOS晶体管MP2的衬底、第三PMOS晶体管MP3的衬底、第四PMOS晶体管MP4的衬底、第五PMOS晶体管MP5的衬底、第六PMOS晶体管MP6的漏极与衬底以及第七PMOS晶体管MP7的源极与衬底;The substrate of the first PMOS transistor MP1 is electrically connected to the substrate of the second PMOS transistor MP2, the substrate of the third PMOS transistor MP3, the substrate of the fourth PMOS transistor MP4, the substrate of the fifth PMOS transistor MP5, and the substrate of the sixth PMOS transistor MP5. the drain and substrate of transistor MP6 and the source and substrate of seventh PMOS transistor MP7;

第一PMOS晶体管MP1的栅极、第二PMOS晶体管MP2的栅极、第三PMOS晶体管MP3的栅极、第四PMOS晶体管MP4的栅极、第五PMOS晶体管MP5的栅极分别电连接逻辑与控制单元模块103的输出端;The gate of the first PMOS transistor MP1, the gate of the second PMOS transistor MP2, the gate of the third PMOS transistor MP3, the gate of the fourth PMOS transistor MP4, and the gate of the fifth PMOS transistor MP5 are respectively electrically connected to logic and control The output terminal of the unit module 103;

第一PMOS晶体管MP1的源极作为开关管模块101的阳极端ANODE电连接比较器模块102的正输入端,第一PMOS晶体管MP1的漏极作为开关管模块101的阴极端CATHODE电连接比较器模块102的负输入端。The source of the first PMOS transistor MP1 serves as the anode terminal ANODE of the switch tube module 101 and is electrically connected to the positive input terminal of the comparator module 102, and the drain of the first PMOS transistor MP1 serves as the cathode terminal CATHODE of the switch tube module 101 and is electrically connected to the comparator module 102's negative input.

在本实施例,利用比较器模块102检测开关管模块101两端的电压降,并通过逻辑与控制单元模块103动态地调整接入电流通路中开关管数目,实现了有源二极管导通电阻的动态调节,进而保证在很宽的输入电流范围内有源二极管的导通压降被限定在一个较小的范围内,有效地控制了有源二极管的导通电压降。In this embodiment, the comparator module 102 is used to detect the voltage drop across the switch tube module 101, and the logic and control unit module 103 is used to dynamically adjust the number of switch tubes in the access current path, thereby realizing the dynamic dynamics of the on-resistance of the active diode. regulation, thereby ensuring that the conduction voltage drop of the active diode is limited within a relatively small range within a wide input current range, effectively controlling the conduction voltage drop of the active diode.

实施例二:Embodiment two:

为了便于理解本发明的工作原理,本实施例在上述实施例的基础上对比较器模块102和逻辑与控制单元模块103的电路结构进行详细说明。In order to facilitate the understanding of the working principle of the present invention, this embodiment describes in detail the circuit structures of the comparator module 102 and the logic and control unit module 103 on the basis of the above embodiments.

请参见图3,图3是本发明实施例提供的一种比较器模块的结构示意图。比较器模块102包括第一比较器COMP1和第二比较器COMP2,其中,Please refer to FIG. 3 . FIG. 3 is a schematic structural diagram of a comparator module provided by an embodiment of the present invention. The comparator module 102 includes a first comparator COMP1 and a second comparator COMP2, wherein,

第一比较器COMP1的正输入端电连接开关管模块101的阳极端ANODE,负输入端电连接开关管模块101的阴极端CATHODE,其输出端电连接逻辑与控制单元模块103的第一输入端;The positive input terminal of the first comparator COMP1 is electrically connected to the anode terminal ANODE of the switching tube module 101, the negative input terminal is electrically connected to the cathode terminal CATHODE of the switching tube module 101, and its output terminal is electrically connected to the first input terminal of the logic and control unit module 103. ;

第二比较器COMP2的正输入端电连接开关管模块101的阳极端ANODE,其负输入端电连接开关管模块101的阴极端CATHODE,其输出端电连接逻辑与控制单元模块103的第二输入端。The positive input terminal of the second comparator COMP2 is electrically connected to the anode terminal ANODE of the switch tube module 101, its negative input terminal is electrically connected to the cathode terminal CATHODE of the switch tube module 101, and its output terminal is electrically connected to the second input of the logic and control unit module 103 end.

请参见图4,图4是本发明实施例提供的一种逻辑与控制单元模块的结构示意图。逻辑与控制单元模块103包括时钟信号逻辑电路I1、计数器I2、译码器I3、驱动电路模块I4;其中:Please refer to FIG. 4 . FIG. 4 is a schematic structural diagram of a logic and control unit module provided by an embodiment of the present invention. The logic and control unit module 103 includes a clock signal logic circuit I1, a counter I2, a decoder I3, and a drive circuit module I4; wherein:

时钟信号逻辑电路I1的输入端电连接比较器模块102的输出端;计数器I2的输入端电连接时钟信号逻辑电路I1的输出端;译码器I3的输入端电连接计数器I2的输出端;驱动电路模块I4的输入端电连接译码器I3的输出端,且其输出端电连接开关管模块101。The input end of the clock signal logic circuit I1 is electrically connected to the output end of the comparator module 102; the input end of the counter I2 is electrically connected to the output end of the clock signal logic circuit I1; the input end of the decoder I3 is electrically connected to the output end of the counter I2; The input end of the circuit module I4 is electrically connected to the output end of the decoder I3 , and the output end thereof is electrically connected to the switching tube module 101 .

进一步地,时钟信号逻辑电路I1的第一输入端VO1电连接比较器模块102的第一输出端,第二输入端VO2电连接比较器模块102的第二输出端。Further, the first input terminal VO1 of the clock signal logic circuit I1 is electrically connected to the first output terminal of the comparator module 102 , and the second input terminal VO2 is electrically connected to the second output terminal of the comparator module 102 .

在本实施例中,利用两个比较器102检测开关管模块101两端的电压降,并通过逻辑与控制单元模块103动态地调整的接入电流通路中开关管的数目,实现有源二极管导通电阻的动态调节,有效地提升了有源二极管电流过零点的检测精度,拓宽了有源二极管的输入范围。In this embodiment, two comparators 102 are used to detect the voltage drop across the switch tube module 101, and the number of switch tubes in the access current path dynamically adjusted by the logic and control unit module 103 is used to realize active diode conduction The dynamic adjustment of the resistance effectively improves the detection accuracy of the zero-crossing point of the active diode current and widens the input range of the active diode.

实施例三:Embodiment three:

请参见图5,图5是本发明实施例提供的一种自适应导通电阻的有源二极管的电路示意图。如图所示,计数器I2的时钟信号输入端CLK2电连接时钟信号逻辑电路I1的时钟信号输出端CLK1,其加减计数控制端VADDSUB2电连接时钟信号逻辑电路I1的加减计数控制输出端VADDSUB1,其清零输入端RST2电连接时钟信号逻辑电路I1的清零输出端RST1。Please refer to FIG. 5 . FIG. 5 is a schematic circuit diagram of an active diode with adaptive on-resistance provided by an embodiment of the present invention. As shown in the figure, the clock signal input terminal CLK2 of the counter I2 is electrically connected to the clock signal output terminal CLK1 of the clock signal logic circuit I1, and its addition and subtraction counting control terminal V ADDSUB2 is electrically connected to the addition and subtraction counting control output terminal V of the clock signal logic circuit I1. ADDSUB1 , its reset input terminal RST2 is electrically connected to the reset output terminal RST1 of the clock signal logic circuit I1.

进一步地,计数器I2为3位计数器且译码器I3为3_5译码器,其中,3位计数器的第一输出端QA1电连接3_5译码器的第一输入端QA2;3位计数器的第二输出端QB1电连接3_5译码器的第二输入端QB2相接;3位计数器的第三输出端QC1电连接3_5译码器的第三输入端QC2。Further, the counter I2 is a 3-bit counter and the decoder I3 is a 3-5 decoder, wherein the first output terminal QA1 of the 3-bit counter is electrically connected to the first input terminal QA2 of the 3-5 decoder; The output terminal QB1 is electrically connected to the second input terminal QB2 of the 3_5 decoder; the third output terminal QC1 of the 3-bit counter is electrically connected to the third input terminal QC2 of the 3_5 decoder.

进一步地,驱动电路模块I4包括第一驱动电路D1、第二驱动电路D2、第三驱动电路D3、第四驱动电路D4、第五驱动电路D5,其中,第一驱动电路D1、第二驱动电路D2、第三驱动电路D3、第四驱动电路D4、第五驱动电路D5的输入端分别电连接3_5译码器的5个输出端,第一驱动电路D1、第二驱动电路D2、第三驱动电路D3、第四驱动电路D4、第五驱动电路D5的输出端分别电连接开关管模块101的第一PMOS晶体管MP1的栅极、第二PMOS晶体管MP2的栅极、第三PMOS晶体管MP3的栅极、第四PMOS晶体管MP4的栅极以及第五PMOS晶体管MP5的栅极。Further, the drive circuit module I4 includes a first drive circuit D1, a second drive circuit D2, a third drive circuit D3, a fourth drive circuit D4, and a fifth drive circuit D5, wherein the first drive circuit D1, the second drive circuit The input terminals of D2, the third drive circuit D3, the fourth drive circuit D4, and the fifth drive circuit D5 are electrically connected to 5 output terminals of the 3-5 decoder respectively, the first drive circuit D1, the second drive circuit D2, the third drive circuit The output ends of the circuit D3, the fourth drive circuit D4, and the fifth drive circuit D5 are respectively electrically connected to the gate of the first PMOS transistor MP1, the gate of the second PMOS transistor MP2, and the gate of the third PMOS transistor MP3 of the switching tube module 101. pole, the gate of the fourth PMOS transistor MP4 and the gate of the fifth PMOS transistor MP5.

现参见图6,图6是本发明实施例提供的一种自适应导通电阻的有源二极管在一个宽输入电流变化范围内的工作原理图。当流过有源二极管的电流变化时,通过两个比较器COMP1和COMP2检测有源二极管两端的电压降,当有源二极管两端的电压降超出设定的电压降范围时,两个比较器COMP1和COMP2输出信号VO1和VO2,这两个输出信号驱动逻辑与控制单元模块动态改变开关管模块中晶体管的导通状态,从而实现有源二极管导通电阻的动态变化。Referring now to FIG. 6 , FIG. 6 is a working principle diagram of an active diode with adaptive on-resistance provided by an embodiment of the present invention within a wide range of input current variation. When the current flowing through the active diode changes, the voltage drop across the active diode is detected by two comparators COMP1 and COMP2. When the voltage drop across the active diode exceeds the set voltage drop range, the two comparators COMP1 and COMP2 output signals VO1 and VO2, and these two output signals drive the logic and control unit module to dynamically change the conduction state of the transistor in the switch tube module, thereby realizing the dynamic change of the on-resistance of the active diode.

具体地,在输入电流ip增加阶段,自适应导通电阻的有源二极管初始处于关断状态,即第一阶段Φ1,此时,开关管模块101的五个PMOS晶体管都处于截止状态;随着输入电流ip的增大,开关管模块101两端的电压降增大,当开关管模块101两端的电压降大于设定电压降范围上限值时,比较器模块102的输出信号驱动逻辑与控制单元模块103,逻辑与控制模块103产生控制信号并驱动开关管模块101的第一PMOS晶体管MP1导通,即进入第二阶段Φ2;随着输入电流ip的增大,开关管模块101两端的电压降再一次大于设定电压降范围上限值时,比较器模块102的输出信号驱动逻辑与控制单元模块103,逻辑与控制模块103产生控制信号并驱动开关管模块101的第二PMOS晶体管MP2导通,即进入第三阶段Φ3;第二PMOS晶体管MP2的导通降低了开关管模块101的导通电阻,因而有源二极管的电压降下降到限定的电压降范围内;随着输入电流信号ip继续增大,开关管模块101两端的电压降再一次大于设定电压降范围上限值时,第三PMOS晶体管MP3随即导通工作,即进入第四阶段Φ4,开关管模块101两端的电压降再次降到限定的电压降范围内;随着输入电流ip的增大,第四PMOS晶体管MP4导通,即进入第五阶段Φ5,第五PMOS晶体管MP5导通,即进入第六阶段Φ6;此后,输入电流ip开始减少,开关管模块101两端的电压降也随之下降,当开关管模块101两端的电压降下降到设定电压降范围的下限值时,比较器模块102产生输出信号驱动逻辑与控制电路模块103产生控制信号,该控制信号将使有源二极管的第五PMOS晶体管MP5回到关断状态,即回到第五阶段Φ5,第五PMOS晶体管MP5的关断会增大有源二极管的导通电阻,因此开关管模块101两端的电压降随即上升到设定的电压降范围内;输入电流ip再次减少,开关管模块101两端的电压降随着输入电流的减小而下降,当开关管模块101两端的电压降再次下降到设定电压降范围的下限值时,比较器模块102会再次输出信号并驱动逻辑与控制单元模块103,控制信号使第四PMOS晶体管MP4回到关断状态,即回到第四阶段Φ4,开关管模块101的导通电阻随即增加,开关管模块101两端的电压降随即上升到设定的电压降范围之内;随着输入电流的继续减少,开关管模块101的第三PMOS晶体管MP3回到关断状态,即回到第三阶段Φ3,开关管模块101的第二PMOS晶体管MP2回到关断状态,即回到第二阶段Φ2,直到开关管模块101的所有PMOS管子都关断回到有源二极管的截止状态,即第一阶段Φ1。随着输入电流的变化,有源二极管的导通电阻实现了动态变化,即形成了自适应导通电阻的有源二极管。Specifically, in the stage of increasing the input current ip, the active diode of the adaptive on-resistance is initially in the off state, that is, the first stage Φ1, at this time, the five PMOS transistors of the switching tube module 101 are all in the off state; As the input current ip increases, the voltage drop across the switch tube module 101 increases, and when the voltage drop across the switch tube module 101 is greater than the upper limit of the set voltage drop range, the output signal of the comparator module 102 drives the logic and control unit Module 103, the logic and control module 103 generates a control signal and drives the first PMOS transistor MP1 of the switch tube module 101 to conduct, that is, enters the second stage Φ2; with the increase of the input current ip, the voltage drop across the switch tube module 101 When it is greater than the upper limit of the set voltage drop range again, the output signal of the comparator module 102 drives the logic and control unit module 103, and the logic and control module 103 generates a control signal and drives the second PMOS transistor MP2 of the switch tube module 101 to conduct , that is to enter the third stage Φ3; the conduction of the second PMOS transistor MP2 reduces the on-resistance of the switch tube module 101, so the voltage drop of the active diode drops to the limited voltage drop range; as the input current signal ip continues Increase, when the voltage drop across the switch tube module 101 is greater than the upper limit of the set voltage drop range again, the third PMOS transistor MP3 is turned on and works immediately, that is, enters the fourth stage Φ4, and the voltage drop across the switch tube module 101 is again drop to a limited voltage drop range; as the input current ip increases, the fourth PMOS transistor MP4 is turned on, that is, enters the fifth stage Φ5, and the fifth PMOS transistor MP5 is turned on, that is, enters the sixth stage Φ6; thereafter, The input current ip begins to decrease, and the voltage drop across the switch tube module 101 also drops thereupon. When the voltage drop across the switch tube module 101 drops to the lower limit of the set voltage drop range, the comparator module 102 generates an output signal to drive the logic And control circuit module 103 produces control signal, and this control signal will make the 5th PMOS transistor MP5 of active diode return to off state, promptly returns to the fifth stage Φ5, the turning off of the 5th PMOS transistor MP5 can increase active The on-resistance of the diode, so the voltage drop across the switch tube module 101 immediately rises within the set voltage drop range; the input current ip decreases again, and the voltage drop across the switch tube module 101 decreases as the input current decreases, When the voltage drop across the switching tube module 101 drops to the lower limit of the set voltage drop range again, the comparator module 102 will output a signal again and drive the logic and control unit module 103, and the control signal will make the fourth PMOS transistor MP4 return to In the off state, that is, returning to the fourth stage Φ4, the on-resistance of the switch tube module 101 increases immediately, and the voltage drop across the switch tube module 101 immediately rises to within the set voltage drop range; as the input current continues to decrease , the third PMOS transistor MP3 of the switch tube module 101 returns to the off state, that is, returns to the third stage Φ3, and the switch tube module The second PMOS transistor MP2 of 101 returns to the off state, that is, returns to the second stage Φ2, until all the PMOS transistors of the switching tube module 101 are turned off and returns to the off state of the active diodes, that is, the first stage Φ1. As the input current changes, the on-resistance of the active diode changes dynamically, that is, an active diode with adaptive on-resistance is formed.

在本实施例中,第一阶段Φ1对应输入电流范围:0-0.05*ip;第二阶段Φ2对应输入电流范围:0.05*ip-0.3*ip;第三阶段Φ3对应输入电流范围:0.3*ip-0.5*ip;第四阶段Φ4对应输入电流范围:0.5*ip-0.7*ip;第五阶段Φ5对应输入电流范围:0.7*ip-0.9*ip;第六阶段Φ6对应输入电流范围:0.9*ip-1*ip,其中,ip表示输入电流范围的最大值。不同的输入电流变化范围,对应于不同的工作阶段。In this embodiment, the first stage Φ1 corresponds to the input current range: 0-0.05*ip; the second stage Φ2 corresponds to the input current range: 0.05*ip-0.3*ip; the third stage Φ3 corresponds to the input current range: 0.3*ip -0.5*ip; the fourth stage Φ4 corresponds to the input current range: 0.5*ip-0.7*ip; the fifth stage Φ5 corresponds to the input current range: 0.7*ip-0.9*ip; the sixth stage Φ6 corresponds to the input current range: 0.9* ip-1*ip, where ip represents the maximum value of the input current range. Different input current ranges correspond to different working stages.

参见图7,图7是本发明实施例提供的一种自适应导通电阻的有源二极管在各个阶段对应的开关管工作状态说明图。如图所示,第一阶段Φ1:第一PMOS晶体管MP1、第二PMOS晶体管MP2、第三PMOS晶体管MP3、第四PMOS晶体管MP4、第五PMOS晶体管MP5均为关断状态;第二阶段Φ2:第一PMOS晶体管MP1为导通状态,第二PMOS晶体管MP2、第三PMOS晶体管MP3、第四PMOS晶体管MP4、第五PMOS晶体管MP5均为关断状态;第三阶段Φ3:第一PMOS晶体管MP1和第二PMOS晶体管MP2为导通状态,第三PMOS晶体管MP3、第四PMOS晶体管MP4和第五PMOS晶体管MP5为关断状态;第四阶段Φ4:第一PMOS晶体管MP1、第二PMOS晶体管MP2和第三PMOS晶体管MP3为导通状态,第四PMOS晶体管MP4和第五PMOS晶体管MP5为关断状态;第五阶段Φ5:第一PMOS晶体管MP1、第二PMOS晶体管MP2、第三PMOS晶体管MP3、第四PMOS晶体管MP4均为导通状态、第五PMOS晶体管MP5关断状态;第六阶段Φ6:第一PMOS晶体管MP1、第二PMOS晶体管MP2、第三PMOS晶体管MP3、第四PMOS晶体管MP4、第五PMOS晶体管MP5均为导通状态;在输入电流增加阶段,有源二极管的电压降随着输入电流的增加而上升,一旦该电压降增加到限定的电压降上限值,第一PMOS晶体管MP1、第二PMOS晶体管MP2、第三PMOS晶体管MP3、第四PMOS晶体管MP4、第五PMOS晶体管MP5就会依次从关断状态变为导通状态,从而减少了有源二极管的导通电阻,有效减少了有源二极管的导通电压降;在输入电流减少阶段,有源二极管的电压降随着输入电流的减少而下降,一旦该电压降下降到限定的电压降下限值,第一PMOS晶体管MP1、第二PMOS晶体管MP2、第三PMOS晶体管MP3、第四PMOS晶体管MP4、第五PMOS晶体管MP5就会依次从导通状态变为关断状态,从而增加了有源二极管的导通电阻,有效提高了有源二极管电流过零点的检测精度,增加了有源二极管的导通电阻,使有源二极管的导通电压降维持在限定的电压降范围内,可以保证自适应导通电阻有源二极管的导通损耗比传统有源二极管的导通损耗小,间接拓宽了整流接口电路的输入范围,有助于提升压电能量获取整流接口电路的整流效率。Referring to FIG. 7 , FIG. 7 is an explanatory diagram of the working states of the switching tubes corresponding to each stage of an active diode with adaptive on-resistance provided by an embodiment of the present invention. As shown in the figure, the first stage Φ1: the first PMOS transistor MP1, the second PMOS transistor MP2, the third PMOS transistor MP3, the fourth PMOS transistor MP4, and the fifth PMOS transistor MP5 are all off; the second stage Φ2: The first PMOS transistor MP1 is in the on state, the second PMOS transistor MP2, the third PMOS transistor MP3, the fourth PMOS transistor MP4, and the fifth PMOS transistor MP5 are all in the off state; the third stage Φ3: the first PMOS transistor MP1 and The second PMOS transistor MP2 is in the on state, the third PMOS transistor MP3, the fourth PMOS transistor MP4 and the fifth PMOS transistor MP5 are in the off state; the fourth stage Φ4: the first PMOS transistor MP1, the second PMOS transistor MP2 and the first PMOS transistor MP2 The three PMOS transistors MP3 are in the on state, the fourth PMOS transistor MP4 and the fifth PMOS transistor MP5 are in the off state; the fifth stage Φ5: the first PMOS transistor MP1, the second PMOS transistor MP2, the third PMOS transistor MP3, the fourth The PMOS transistors MP4 are all in the on state, and the fifth PMOS transistor MP5 is in the off state; the sixth stage Φ6: the first PMOS transistor MP1, the second PMOS transistor MP2, the third PMOS transistor MP3, the fourth PMOS transistor MP4, the fifth PMOS Transistors MP5 are all in the conduction state; in the stage of increasing input current, the voltage drop of the active diode rises with the increase of input current, once the voltage drop increases to the limited voltage drop upper limit, the first PMOS transistor MP1, the second The second PMOS transistor MP2, the third PMOS transistor MP3, the fourth PMOS transistor MP4, and the fifth PMOS transistor MP5 will sequentially change from the off state to the on state, thereby reducing the on-resistance of the active diode and effectively reducing the active diode. The conduction voltage drop of the source diode; in the stage of reducing the input current, the voltage drop of the active diode decreases with the decrease of the input current, once the voltage drop drops to the lower limit value of the defined voltage drop, the first PMOS transistor MP1, the second The PMOS transistor MP2, the third PMOS transistor MP3, the fourth PMOS transistor MP4, and the fifth PMOS transistor MP5 will turn from the on state to the off state in turn, thereby increasing the on-resistance of the active diode and effectively improving the active diode. The detection accuracy of the zero-crossing point of the diode current increases the conduction resistance of the active diode, so that the conduction voltage drop of the active diode is maintained within a limited voltage drop range, which can ensure the conduction loss of the adaptive conduction resistance active diode Compared with the traditional active diode, the conduction loss is smaller, which indirectly broadens the input range of the rectification interface circuit, and helps to improve the rectification efficiency of the piezoelectric energy acquisition rectification interface circuit.

以上内容是结合优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。The above content is a further detailed description of the present invention in conjunction with preferred embodiments, and it cannot be assumed that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deduction or replacement can be made, which should be regarded as belonging to the protection scope of the present invention.

Claims (8)

1. An adaptive on-resistance active diode, comprising:
the device comprises a switch tube module (101), a comparator module (102) and a logic and control unit module (103); wherein,
the output end of the switch tube module (101) is electrically connected with the input end of the comparator module (102);
the output end of the comparator module (102) is electrically connected with the input end of the logic and control unit module (103);
the output end of the logic and control unit module (103) is electrically connected with the input end of the switch tube module (101).
2. The adaptive on-resistance active diode according to claim 1, wherein the switching transistor module (101) comprises a first PMOS transistor (MP1), a second PMOS transistor (MP2), a third PMOS transistor (MP3), a fourth PMOS transistor (MP4), a fifth PMOS transistor (MP5), a sixth PMOS transistor (MP6), and a seventh PMOS transistor (MP 7); wherein,
a source of the first PMOS transistor (MP1) is electrically connected to a source of the second PMOS transistor (MP2), a source of the third PMOS transistor (MP3), a source of the fourth PMOS transistor (MP4), a source of the fifth PMOS transistor (MP5), a source of the sixth PMOS transistor (MP6), and a gate of the seventh PMOS transistor (MP7), respectively;
the drain of the first PMOS transistor (MP1) is electrically connected to the drain of the second PMOS transistor (MP2), the drain of the third PMOS transistor (MP3), the drain of the fourth PMOS transistor (MP4), the drain of the fifth PMOS transistor (MP5), the drain of the seventh PMOS transistor (MP7), and the gate of the sixth PMOS transistor (MP6), respectively;
the substrate of the first PMOS transistor (MP1) is electrically connected to the substrate of the second PMOS transistor (MP2), the substrate of the third PMOS transistor (MP3), the substrate of the fourth PMOS transistor (MP4), the substrate of the fifth PMOS transistor (MP5), the drain and substrate of the sixth PMOS transistor (MP6), and the source and substrate of the seventh PMOS transistor (MP7), respectively;
the gate of the first PMOS transistor (MP1), the gate of the second PMOS transistor (MP2), the gate of the third PMOS transistor (MP3), the gate of the fourth PMOS transistor (MP4) and the gate of the fifth PMOS transistor (MP5) are respectively and electrically connected with the output end of the logic and control unit module (103);
the source of the first PMOS transistor (MP1) is electrically connected to the positive input terminal of the comparator module (102) as the ANODE terminal (ANODE) of the switch tube module (101), and the drain of the first PMOS transistor (MP1) is electrically connected to the negative input terminal of the comparator module (102) as the CATHODE terminal (CATHODE) of the switch tube module (101).
3. The adaptive on-resistance active diode of claim 1, wherein the comparator module (102) comprises a first comparator (COMP1) and a second comparator (COMP 2); wherein,
a positive input end of the first comparator (COMP1) is electrically connected with an ANODE end (ANODE) of the switch tube module (101), a negative input end of the first comparator is electrically connected with a CATHODE end (CATHODE) of the switch tube module (101), and an output end of the first comparator is electrically connected with a first input end of the logic and control unit module (103);
the positive input end of the second comparator (COMP2) is electrically connected with the ANODE end (ANODE) of the switch tube module (101), the negative input end of the second comparator is electrically connected with the CATHODE end (CATHODE) of the switch tube module (101), and the output end of the second comparator is electrically connected with the second input end of the logic and control unit module (103).
4. The adaptive on-resistance active diode according to claim 1, wherein the logic and control unit module (103) comprises a clock signal logic circuit (I1), a counter (I2), a decoder (I3), a driving circuit module (I4); wherein:
the input end of the clock signal logic circuit (I1) is electrically connected with the output end of the comparator module (102); the input end of the counter (I2) is electrically connected with the output end of the clock signal logic circuit (I1); the input end of the decoder (I3) is electrically connected with the output end of the counter (I2); the input end of the driving circuit module (I4) is electrically connected with the output end of the decoder (I3), and the output end of the driving circuit module (I4) is electrically connected with the input end of the switch tube module (101).
5. The adaptive on-resistance active diode according to claim 4, wherein the clock signal logic circuit (I1) has a first input terminal (VO1) electrically connected to the first output terminal of the comparator block (102) and a second input terminal (VO2) electrically connected to the second output terminal of the comparator block (102).
6. The adaptive on-resistance active diode according to claim 4, wherein the clock signal input terminal (CLK2) of the counter (I2) is electrically connected to the clock signal output terminal (CLK1) of the clock signal logic circuit (I1), and the up-down count control terminal (V) of the counter (I2)ADDSUB2) An up-down counting control output end (V) electrically connected with the clock signal logic circuit (I1)ADDSUB1) The clear input end (RST2) of the counter (I2) is electrically connected with the clear output end (RST1) of the clock signal logic circuit (I1).
7. The adaptive on-resistance active diode of claim 4, wherein the counter (I2) is a 3-bit counter and the decoder (I3) is a 3_5 decoder; wherein a first output terminal (QA1) of the 3-bit counter is electrically connected to a first input terminal (QA2) of the 3_5 decoder; a second output end (QB1) of the 3-bit counter is electrically connected with a second input end (QB2) of the 3_5 decoder; and a third output end (QC1) of the 3-bit counter is electrically connected with a third input end (QC2) of the 3_5 decoder.
8. The adaptive on-resistance active diode according to claim 4, wherein the driving circuit module (I4) comprises a first driving circuit (D1), a second driving circuit (D2), a third driving circuit (D3), a fourth driving circuit (D4), a fifth driving circuit (D5); wherein, the input terminals of the first driving circuit (D1), the second driving circuit (D2), the third driving circuit (D3), the fourth driving circuit (D4) and the fifth driving circuit (D5) are electrically connected to 5 output terminals of the 3_5 decoder, respectively; the output ends of the first driving circuit (D1), the second driving circuit (D2), the third driving circuit (D3), the fourth driving circuit (D4) and the fifth driving circuit (D5) are respectively electrically connected with the input end of the switch tube module (101).
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