CN107947124A - Improved battery protection system - Google Patents
Improved battery protection system Download PDFInfo
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- CN107947124A CN107947124A CN201711257927.3A CN201711257927A CN107947124A CN 107947124 A CN107947124 A CN 107947124A CN 201711257927 A CN201711257927 A CN 201711257927A CN 107947124 A CN107947124 A CN 107947124A
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/18—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/006—Calibration or setting of parameters
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Abstract
The present invention provides a kind of battery protection system, it includes：Positive power source terminal；Negative power end；Battery pack；Battery protecting circuit；Charge and discharge switch combines.The battery protecting circuit includes voltage comparator, it is used to detect whether the voltage of the 3rd test side to be more than or less than reference threshold voltage.The voltage comparator includes first resistor, second resistance, 3rd resistor, the 4th resistance, the first feedback resistance, the second feedback resistance, the 3rd feedback resistance, the first MOS transistor, the second MOS transistor, the 4th MOS transistor, and the first bipolar transistor, the second bipolar transistor and active load.By increasing feedback resistance, influences of the misalignment voltage Vos to turn threshold can be reduced, so that influences of the misalignment voltage Vos to turn threshold is within the acceptable range.As a result of such improved voltage comparator, the accuracy of the battery protection system is improved.
Description
【Technical field】
The present invention relates to electronic circuit technology field, more particularly to a kind of improved battery protection system.
【Background technology】
There are voltage comparator and current comparator in battery protecting circuit.Voltage comparator is divided into overcharged voltage and compares again
Device and overdischarge pressure comparator.With the progress of li-ion cell protection technology, to additives for overcharge protection threshold value (VOC) and over
The required precision of threshold value (VOD) is higher and higher.Shown in please referring to Fig.1, it is a kind of overcharged voltage comparator of the prior art
Circuit diagram, overdischarge pressure comparator it is similar with the circuit structure of overcharged voltage comparator, by the resistance Rd1 of different proportion
The additives for overcharge protection threshold value VOC and over threshold value VOD different with Rd2 generations.
In chip actual production processing, since stress is influenced after by process deviation and encapsulation, it can cause in Fig. 1
MOS (Metal-Oxide-Semiconductor) transistors M4, M1, M2 are mismatched, and are introduced random mismatch and (are equivalent to mismatch electricity
Press Vos1 and Vos2), there is deviation in the actual value and design load for ultimately resulting in charge protection threshold value VOC.Simulation result shows,
The Vos1 of +/- 3mv can cause VOC off-design value+100/-96mv, this is flagrant in high precision design.
Therefore, it is necessary to a kind of improved technical solution is provided to solve the above problems.
【The content of the invention】
It is an object of the invention to provide a kind of battery protection system, it uses improved voltage comparator, the voltage ratio
Misalignment voltage Vos can be reduced to turn threshold (such as additives for overcharge protection threshold value VOC or over threshold value VOD) compared with device
Influence so that influences of the misalignment voltage Vos to turn threshold is within the acceptable range.
To solve the above-mentioned problems, the present invention provides a kind of battery protection system, it includes：Positive power source terminal；Negative power end；
Battery pack, its cathode are connected with positive power source terminal；Battery protecting circuit, its first power detecting end and the cathode phase of the battery pack
Even, its second source test side is connected with the anode of the battery pack, its 3rd power detecting end is connected with the negative power end；
Charge and discharge switch combines, it is connected between the anode of the battery pack and negative power end, its first control terminal and the battery
The discharge control terminal of protection circuit is connected, its second control terminal is connected with the charge control end of the battery protecting circuit；It is described
Battery protecting circuit includes voltage comparator, it is used to detect whether the voltage of the 3rd test side to be more than or less than reference threshold electricity
Pressure, the voltage comparator include first resistor, second resistance, 3rd resistor, the 4th resistance, the first feedback resistance, second anti-
Resistance, the 3rd feedback resistance, the first MOS transistor, the second MOS transistor, the 4th MOS transistor are fed, and first is ambipolar
Transistor, the second bipolar transistor and active load, wherein, 3rd resistor and the 4th resistance are sequentially connected in series in voltage input end
Between ground terminal, the 3rd feedback resistance is connected between the first connecting pin of power end and the 4th MOS transistor, the 4th MOS
The control terminal of transistor is connected with the second connection end of the 4th MOS transistor, the second connection end and second of the 4th MOS transistor
First connecting pin of bipolar transistor is connected, between the control terminal and 3rd resistor of the second bipolar transistor and the 4th resistance
Connecting node be connected, the second connection end of the second bipolar transistor is connect by the first resistor and second resistance being sequentially connected in series
Ground；First feedback resistance is connected between power end and the first connecting pin of the first MOS transistor, the control of the first MOS transistor
End processed is connected with the control terminal of the 4th MOS transistor, the second connection end of the first MOS transistor and the first bipolar transistor
First connecting pin is connected, and the control terminal of the control terminal of the first bipolar transistor and the second bipolar transistor, first is ambipolar
The second connection end of transistor is connected with the connecting node between first resistor and second resistance；Second feedback resistance is connected to electricity
Between source VDD and the first connecting pin of the second MOS transistor, the control terminal of the second MOS transistor and the first MOS transistor and
Connecting node between first bipolar transistor is connected, the second connection end of the second MOS transistor and voltage comparator it is defeated
Outlet is connected；One end of the active load is connected with the output terminal of voltage comparator, the other end ground connection of the active load,
The active load produces the constant current from the output terminal flow direction ground of the voltage comparator.
Compared with prior art, the present invention can reduce misalignment voltage Vos to turn threshold by increasing feedback resistance
Influence, so that influences of the misalignment voltage Vos to turn threshold is within the acceptable range.As a result of such improved
Voltage comparator, improves the accuracy of the battery protection system.
【Brief description of the drawings】
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this
For the those of ordinary skill of field, without having to pay creative labor, it can also be obtained according to these attached drawings other
Attached drawing.Wherein：
Fig. 1 is a kind of circuit diagram of voltage comparator of the prior art；
Fig. 2 is the schematic diagram of the equivalent circuit of the voltage comparator shown in Fig. 1；
Fig. 3 is the circuit diagram of the voltage comparator of the present invention in one embodiment；
Fig. 4 is the schematic diagram of the equivalent circuit of the voltage comparator shown in Fig. 3；
Fig. 5 is the circuit structure diagram of the battery protection system of the present invention in one embodiment..
【Embodiment】
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
" one embodiment " or " embodiment " referred to herein refers to may be included at least one implementation of the present invention
A particular feature, structure, or characteristic." in one embodiment " that different places occur in the present specification not refers both to same
A embodiment, nor the single or selective embodiment mutually exclusive with other embodiment.Unless stated otherwise, herein
In connect, be connected, connecting expression be electrically connected word represent directly or indirectly to be electrical connected.
Shown in please referring to Fig.2, it is the schematic equivalent circuit of the voltage comparator shown in Fig. 1.The voltage comparator
Overcharged voltage comparator is may be used as, the voltage comparator is used to be equal to additives for overcharge protection threshold value in detection terminal voltage VM at this time
During VOC, output signal is overturn.The voltage comparator may be used as overdischarge pressure comparator, and the voltage compares at this time
Device is used for when detection terminal voltage VM is equal to over threshold value VOD, and output signal is overturn.Hereafter will be with the voltage
Comparator is is introduced exemplified by overcharged voltage comparator, the turn threshold of the voltage comparator is additives for overcharge protection threshold at this time
Value VOC.
In Fig. 2, the collector resistance of bipolar transistor N1 is denoted as Rce, and the drain resistance of metal-oxide-semiconductor M1, M2, M3 are remembered respectively
For Rds1, Rds2, Rds3, bipolar transistor N1, the equivalent transconductance of metal-oxide-semiconductor M1, M2, M3 be denoted as respectively gm0, gm1, gm2,
Gm3, wherein bipolar transistor N1 itself mutual conductances are denoted as gmn, then have：
First order output resistance Ro1 is：
Ro1=Rds1//Rce* (1+gmn*Re)
Second level output resistance Ro2 is：
Ro2=Rds2//Rds3
First order gain A v1 is：
Influences of the equivalent misalignment voltage Vos1 to input voltage vin：
Influences of the equivalent misalignment voltage Vos2 to input voltage vin：
Δ Vin2=Vos2/Av1.
According to Fig. 1 and Fig. 2, the relation of additives for overcharge protection threshold value VOC and input voltage vin is：
Vin=Voc*Rd2/ (Rd1+Rd2)
Wherein, for the emitter that Re is the bipolar transistor N1 in Fig. 1 to the equivalent resistance on ground, Rd1 and Rd2 are respectively to scheme
The resistance value of resistance Rd1 and Rd2 in 1, Vos1 be in Fig. 2 equivalent misalignment voltage Vos1 (or be current mirror mismatch electricity
Pressure), Vos2 is the equivalent misalignment voltage Vos2 (or being second level misalignment voltage) in Fig. 2, and Vin is the voltage ratio described in Fig. 2
Compared with the input voltage of device base stage of bipolar transistor N1 in output switching activity, its relation proportional to charge protection threshold value VOC,
Δ Vin is the variable quantity of the input voltage vin of the base stage, it is corresponding with the variable quantity of charge protection threshold value VOC.
In order to reduce the influence of misalignment voltage Vos1, Vos2 to additives for overcharge protection threshold value VOC precision, the present invention is to existing
Overcharged voltage comparator is improved.
Shown in please referring to Fig.3, the circuit diagram of its overcharged voltage comparator of present invention in one embodiment.Fig. 3
It is with the main distinction of Fig. 1, Fig. 3 is added on the basis of the overcharged voltage comparator shown in Fig. 1, is connected to power end
The first negative feedback resistor Rs1 between the source electrode of VDD and metal-oxide-semiconductor M1, is connected between the source electrode of power end VDD and metal-oxide-semiconductor M2
The second negative feedback resistor Rs2, and the 3rd negative feedback resistor being connected between the source electrode of power end VDD and metal-oxide-semiconductor M3
Rs3。
Overcharged voltage comparator shown in Fig. 3 includes first resistor R1, second resistance R2,3rd resistor Rd1, the 4th resistance
Rd2, the first feedback resistance Rs1, the second feedback resistance Rs2 and the 3rd feedback resistance Rs3, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2,
4th metal-oxide-semiconductor M4, and the first bipolar transistor N1, the second bipolar transistor N2 and active load 110.Wherein, the 3rd
Resistance Rd1 and the 4th resistance Rd2 are sequentially connected in series between voltage input end VM and ground terminal, and the 3rd feedback resistance Rs3 is connected to
Between the first connecting pin of power end VDD and the 4th metal-oxide-semiconductor M4, the control terminal of the 4th metal-oxide-semiconductor M4 and the second of the 4th metal-oxide-semiconductor M4
Connecting pin is connected, and the second connection end of the 4th metal-oxide-semiconductor M4 is connected with the first connecting pin of the second bipolar transistor N2, second pair
Connecting node between the control terminal of bipolar transistor N2 and 3rd resistor Rd1 and the 4th resistance Rd2 is connected, the second ambipolar crystalline substance
The second connection end of body pipe N2 is grounded by the first resistor R1 and second resistance R2 being sequentially connected in series；First feedback resistance Rs1 connects
It is connected between the first connecting pin of power end VDD and the first metal-oxide-semiconductor M1, the control terminal of the first metal-oxide-semiconductor M1 is with the 4th metal-oxide-semiconductor M4's
Control terminal is connected, and the second connection end of the first metal-oxide-semiconductor M1 is connected with the first connecting pin of the first bipolar transistor N1, first pair
The control terminal of the control terminal of bipolar transistor N1 and the second bipolar transistor N2, the second connection of the first bipolar transistor N1
End is connected with the connecting node between first resistor R1 and second resistance R2；Second feedback resistance Rs2 be connected to power end VDD and
Between the first connecting pin of second metal-oxide-semiconductor M2, the control terminal of the second metal-oxide-semiconductor M2 and the first metal-oxide-semiconductor M1 and the first bipolar transistor
Connecting node between pipe N1 is connected, and the second connection end of the second metal-oxide-semiconductor M2 is connected with the output end vo ut of voltage comparator；Have
One end of source load 110 is connected with the output end vo ut of voltage comparator, the other end ground connection of active load 110.
In the specific embodiment shown in Fig. 3, active load 110 includes the 3rd metal-oxide-semiconductor M3, and the first of the 3rd metal-oxide-semiconductor M3
Connecting pin and the output end vo ut of voltage comparator, its second connection end ground connection, its control terminal are connected with bias voltage Vbias,
So that the active load 110 produces the constant current Ibias from output end vo ut flow directions ground；The 3rd metal-oxide-semiconductor M3 is
Nmos pass transistor, and the first connecting pin, second connection end and the control terminal of metal-oxide-semiconductor M3 is respectively the drain electrode of nmos pass transistor, source
Pole and grid；Described metal-oxide-semiconductor M1, M2 and M4 are POS transistors, and the first connecting pin of metal-oxide-semiconductor M1, M2 and M4, second are connected
It is respectively the source electrode of PMOS transistor, drain and gate to connect end and control terminal；The bipolar transistor N1 and N2 is NPN type
Transistor, and the first connecting pin, second connection end and the control terminal of the bipolar transistor N1 and N2 is respectively NPN type crystal
Collector, emitter and the base stage of pipe.
Shown in please referring to Fig.4, it is the schematic diagram for the equivalent circuit that it is overcharged voltage comparator shown in Fig. 3.Fig. 4 with
The main distinction of Fig. 2 is：Fig. 4 is added on the basis of the equivalent circuit of the overcharged voltage comparator shown in Fig. 2, is connected to
The first negative feedback resistor Rs1 between the source electrode of power end VDD and metal-oxide-semiconductor M1, is connected to the source of power end VDD and metal-oxide-semiconductor M2
The second negative feedback resistor Rs2 between pole.
Since metal-oxide-semiconductor M1, M2 and M4 in Fig. 3 are mismatched, equivalent misalignment voltage Vos1 and Vos1 is produced, it belongs to parasitic
Voltage source.In Fig. 4, the cathode of equivalent misalignment voltage Vos1 is connected with the control terminal of the first metal-oxide-semiconductor M1, its anode ground connection；Deng
The cathode of effect misalignment voltage Vos2 is connected with the connecting node between the first metal-oxide-semiconductor M1 and the first bipolar transistor N1, it is negative
Pole is connected with the control terminal of the second metal-oxide-semiconductor M2.In other embodiments or the anode of equivalent misalignment voltage Vos1 and
The control terminal of one metal-oxide-semiconductor M1 is connected, its plus earth；The anode of equivalent misalignment voltage Vos2 and the first metal-oxide-semiconductor M1 and first pair
Connecting node between bipolar transistor N1 is connected, its cathode is connected with the control terminal of the second metal-oxide-semiconductor M2.This is mainly by device
Unmatched concrete condition determines.
Analyzed below for Fig. 4.
After adding the first negative feedback resistor Rs1, the equivalent transconductance gm1' of metal-oxide-semiconductor M1 is：
The equivalent transconductance gm0' of bipolar transistor N1 is：
Gm0'=gm0,
First order output resistance Ro1' is：
Ro1 '=Rds1 (1+gm1*Rs1) //Rce* (1+gmn*Re)
Second level output resistance Ro2' is：
Ro2 '=Rds2 (1+gm2*Rs2) //Rds3
First order gain A v1' is：
Influences of the equivalent misalignment voltage Vos1 to input voltage vin：
In this way,
That is, influences of the Vos1 to input voltage vin is changed into original
Influences of the equivalent misalignment voltage Vos2 to input voltage vin：
Δ Vin2'=Vos2/Av1',
Due to Ro1 '>Ro1, so the first stage gain becomes larger, influences of the equivalent misalignment voltage Vos2 to input voltage vin is same
Sample reduces.
Performance comparison before and after improvement.
Table 1：VOC values are by Vos1 impact analysis before and after improvement
* mono- columns of Delta Voc refer to there be difference of the mismatch (Vos1=+/- 3mv) relative to VOC during no mismatch.
When from upper form as can be seen that not having Rs1, the Vos1 of +/- 3mv can cause VOC value off-design values+100/-
96mv；After increasing Rs1, Vos1 causes VOC deviation values to diminish, and Rs1 is bigger, and 1/ (1+gm1*Rs1) is smaller, and Vos1 is to VOC
Influence it is smaller；As Rs1=300k, the Vos1 of +/- 3mv causes VOC off-designs value to only have+7/-8mv.
Table 2：VOC values are by Vos2 impact analysis before and after improvement
* mono- columns of Delta Voc refer to there be difference of the mismatch (Vos2=+/- 100mv) relative to VOC during no mismatch.
As can be seen that after increase Rs1 from upper form, VOC deviation values diminish caused by Vos2.It can also be obtained with reference to table 1
Go out, influences of the Vos2 to VOC is small more than influences of the Vos1 to VOC, this is because influences of the Vos2 to VOC will divided by the first order
Gain.
Compared with prior art, the present invention in voltage comparator the advantages of be：
Reduce influences of the current mirror mismatch Vos1 to additives for overcharge protection threshold value VOC (or over threshold value VOD)；
Increase first order comparator gain, reduce second level mismatch Vos2 to additives for overcharge protection threshold value VOC (or cross put
Electric protection threshold value VOD)；
Random mismatch is reduced to additives for overcharge protection threshold with smaller cost (increase only source degeneration resistance Rs)
The influence of value VOC (or over threshold value VOD), and effect is obvious.
Fig. 5 is the circuit structure diagram of the battery protection system 500 of the present invention in one embodiment.The battery protection system
System 500 includes：Positive power source terminal BP+, negative power end BP-, battery pack Battery, battery protecting circuit 510 and charge and discharge switch group
Uraphetine.The cathode of the battery pack Battery is connected with positive power source terminal BP+.First power supply of the battery protecting circuit 510
Test side VCC is connected with the cathode of the battery pack, its second source test side VSS is connected with the anode of the battery pack, its
3rd power detecting end VM is connected with the negative power end BP-.The charge and discharge switch combination 520 is connected to the battery pack
Between anode and negative power end, its first control terminal is connected with the discharge control terminal DOUT of the battery protecting circuit 510, it
Two control terminals are connected with the charge control end COUT of the battery protecting circuit 510.The battery protecting circuit includes voltage ratio
Compared with device.The voltage comparator can be the improved voltage comparator being mentioned above.Voltage detecting side comparator is used
In the voltage of detection tertiary voltage test side VM whether be more than or less than reference threshold voltage (such as additives for overcharge protection threshold value VOC,
Or over threshold value VOD).In this embodiment, tertiary voltage test side VM is the voltage input end VM shown in Fig. 3-4.
In the present invention, the word that the expression such as " connection ", connected, " company ", " connecing " is electrical connected, unless otherwise instructed, then
Represent direct or indirect electric connection.
It is pointed out that any change that one skilled in the art does the embodiment of the present invention
All without departing from the scope of claims of the present invention.Correspondingly, the scope of claim of the invention is also not merely limited to
In previous embodiment.
Claims (5)
1. a kind of battery protection system, it is characterised in that it includes：
Positive power source terminal；
Negative power end；
Battery pack, its cathode are connected with positive power source terminal；
Battery protecting circuit, its first power detecting end are connected with the cathode of the battery pack, its second source test side and institute
The anode for stating battery pack is connected, its 3rd power detecting end is connected with the negative power end；
Charge and discharge switch combine, it is connected between the anode of the battery pack and negative power end, its first control terminal with it is described
The discharge control terminal of battery protecting circuit is connected, its second control terminal is connected with the charge control end of the battery protecting circuit；
The battery protecting circuit includes voltage comparator, it is used to detect whether the voltage of the 3rd test side to be more than or less than ginseng
Examine threshold voltage,
The voltage comparator includes first resistor, second resistance, 3rd resistor, the 4th resistance, the first feedback resistance, second anti-
Resistance, the 3rd feedback resistance, the first MOS transistor, the second MOS transistor, the 4th MOS transistor are fed, and first is ambipolar
Transistor, the second bipolar transistor and active load, wherein, 3rd resistor and the 4th resistance are sequentially connected in series in voltage input end
Between ground terminal, the 3rd feedback resistance is connected between the first connecting pin of power end and the 4th MOS transistor, the 4th MOS
The control terminal of transistor is connected with the second connection end of the 4th MOS transistor, the second connection end and second of the 4th MOS transistor
First connecting pin of bipolar transistor is connected, between the control terminal and 3rd resistor of the second bipolar transistor and the 4th resistance
Connecting node be connected, the second connection end of the second bipolar transistor is connect by the first resistor and second resistance being sequentially connected in series
Ground；
First feedback resistance is connected between power end and the first connecting pin of the first MOS transistor, the control of the first MOS transistor
End processed is connected with the control terminal of the 4th MOS transistor, the second connection end of the first MOS transistor and the first bipolar transistor
First connecting pin is connected, and the control terminal of the control terminal of the first bipolar transistor and the second bipolar transistor, first is ambipolar
The second connection end of transistor is connected with the connecting node between first resistor and second resistance；
Second feedback resistance is connected between power end VDD and the first connecting pin of the second MOS transistor, the second MOS transistor
Control terminal be connected with the connecting node between the first MOS transistor and the first bipolar transistor, the of the second MOS transistor
Two connecting pins are connected with the output terminal of voltage comparator；One end of the active load is connected with the output terminal of voltage comparator,
The other end ground connection of the active load, the active load are produced from the constant of the output terminal flow direction ground of the voltage comparator
Electric current.
2. battery protection system according to claim 1, it is characterised in that first MOS transistor, the 2nd MOS are brilliant
Body pipe and the 4th MOS transistor are PMOS transistor, and first MOS transistor, the second MOS transistor and the 4th MOS
The first connecting pin, second connection end and the control terminal of transistor are respectively the source electrode of PMOS transistor, drain and gate.
3. battery protection system according to claim 2, it is characterised in that first bipolar transistor and second pair
Bipolar transistor is NPN transistor, and the first connection of first bipolar transistor and the second bipolar transistor
End, second connection end and control terminal are respectively the collector, emitter and base stage of NPN transistor.
4. battery protection system according to claim 1, it is characterised in that the active load includes the 3rd MOS crystal
Pipe, the first connecting pin of the 3rd MOS transistor and the output terminal of voltage comparator, its second connection end ground connection, its control terminal with
Bias voltage is connected.
5. battery protection system according to claim 4, it is characterised in that the 3rd MOS transistor is NMOS crystal
Pipe, and the first connecting pin, second connection end and the control terminal of the 3rd MOS transistor be respectively nmos pass transistor drain electrode,
Source electrode and grid.
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| CN110021976A (en) * | 2019-03-18 | 2019-07-16 | 深圳市稳先微电子有限公司 | A kind of overcharged voltage protection detection circuit and system |
| CN110912544A (en) * | 2019-12-11 | 2020-03-24 | 无锡中感微电子股份有限公司 | Drive circuit and battery protection system |
| CN114487567A (en) * | 2021-12-30 | 2022-05-13 | 无锡中感微电子股份有限公司 | Voltage detection module, battery protection circuit and system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110021976A (en) * | 2019-03-18 | 2019-07-16 | 深圳市稳先微电子有限公司 | A kind of overcharged voltage protection detection circuit and system |
| CN110021976B (en) * | 2019-03-18 | 2023-10-20 | 西安稳先半导体科技有限责任公司 | Overcharge voltage protection detection circuit and system |
| CN110912544A (en) * | 2019-12-11 | 2020-03-24 | 无锡中感微电子股份有限公司 | Drive circuit and battery protection system |
| CN114487567A (en) * | 2021-12-30 | 2022-05-13 | 无锡中感微电子股份有限公司 | Voltage detection module, battery protection circuit and system |
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| CN107947124B (en) | 2019-04-16 |
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