CN107922254A - The manufacture method of glass with fine structure - Google Patents
The manufacture method of glass with fine structure Download PDFInfo
- Publication number
- CN107922254A CN107922254A CN201680049431.4A CN201680049431A CN107922254A CN 107922254 A CN107922254 A CN 107922254A CN 201680049431 A CN201680049431 A CN 201680049431A CN 107922254 A CN107922254 A CN 107922254A
- Authority
- CN
- China
- Prior art keywords
- glass
- etching
- hole
- fine structure
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 238000000034 method Methods 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 179
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 64
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- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 30
- 239000004094 surface-active agent Substances 0.000 claims abstract description 30
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 28
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- -1 sulfuric acid Inorganic acid Chemical class 0.000 description 19
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- HLERILKGMXJNBU-UHFFFAOYSA-N norvaline betaine Chemical compound CCCC(C([O-])=O)[N+](C)(C)C HLERILKGMXJNBU-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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Abstract
The present invention provides the formation in the hole for suppressing low pitch, the manufacture method of the glass with fine structure of fine structure such as hole or groove formed with glacing flatness higher and depth on the thickness direction of substrate.The present invention relates to a kind of manufacture method of the glass with fine structure, it has the etching work procedure for irradiating ultrasonic wave to glass to be etched, etching solution used includes hydrofluoric acid in the etching work procedure, more than a kind of the inorganic acid and surfactant in nitric acid, hydrochloric acid and sulfuric acid, in the etching solution, hydrofluoric acid concentration is the mass % of 0.05 mass %~8.0, and inorganic acid concentration is the mass % of 2.0 mass %~16.0, and the content of surfactant is 5ppm~1000ppm.
Description
Technical field
The present invention relates to as caused by laser pulse through hole, have the fine structures such as bottom outlet, groove glass system
Make method.More specifically, it is related to a kind of manufacture method of glass, it is rotten to be formed by irradiating laser to glass substrate etc.
Portion or processing hole, and by going bad portion to this or processing hole carries out ultrasonic irradiation etching and carries out removing processing, so as to obtain
Glass formed with the fine structure.
Background technology
It is etched as the glass substrate to foring rotten portion or small processing hole so as to shape on the glass substrate
Into required hole or the method for groove, For example, Patent Document 1 discloses rotten so as to be formed to glass irradiation laser pulse
Portion, and use etch-rate (hereinafter also referred to as etching speed) bigger that the glass substrate is compared to the etch-rate in the portion that goes bad
Etching solution be etched so as to the method that forms hole or groove.In addition, Patent Document 2 discloses become a part for substrate
Matter, and to the partial illumination laser so as to after forming small processing hole, is processed substrate by being etched
Method.That is, as shown in Figure 1, being etched to the glass substrate 11 for foring rotten portion or small processing hole so as to form institute
The hole needed.
Glass substrate formed with through hole etc. is particularly used for electric substrate purposes situations such as interpolater etc., after consideration
Continuous electrode forming process etc., in order to further ensure stable electric current, it is expected that the glacing flatness of such as through hole is high.
However, patent document 1,2 etc. is in the prior art, and it is smaller by the gradient for etching the hole formed, can not sometimes yet
Form deep hole.Due to widen by etching fine rotten portion or processing hole so as to form required shape,
The etch-rate of base glass material is not zero.Further, since discrepancy of the etching solution inside fine rotten portion or processing hole is difficult,
Even if therefore making the stirrer of bar-shaped, tabular or spiral pulpous state be rotated in etching liquid cell or stirring etching solution using bubbling,
Etching is also that the part near substrate surface is very fast, and slower inside substrate.Etch-rate in rotten portion is than rotten portion
For item as discrepancy or displacement of the situation of part bigger in addition for the etching solution, gradient is being formed greatly simultaneously
And very big key element is not occupied in terms of the purpose in the high hole of glacing flatness.However, to possess beyond rotten portion and rotten portion
In the case that the glass of the less characteristic of difference of partial etch-rate is object, it is until rotten portion is etched to inside substrate
Only, around the rotten portion near substrate surface, the etching of the part beyond rotten portion is all carrying out, the difference of the etch-rate
It is smaller, the problem of hole gradient in the rotten portion near substrate surface as shown in Figure 2 diminishes may more occur.
Prior art literature
Patent document
Patent document 1:Japanese Unexamined Patent Publication 2011-37707 publications
Patent document 2:Japanese Unexamined Patent Publication 2001-105398 publications
The content of the invention
Technical problems to be solved by the inivention
The invention that the present invention is in view of the above problems and completes, its object is to, there is provided one kind has and uses laser arteries and veins
The manufacture method of the glass of the fine structure of punching, this method suppress the formation for possessing the hole of the low pitch of the fine structure, obtain
To the glass of the fine structure such as the hole formed with glacing flatness higher and depth on the thickness direction of glass substrate or groove.Particularly
There is provided a kind of has and the manufacture method of glass with the fine structure of laser pulse, this method suppress possess the fine structure
The formation in the hole of low pitch, obtains on the thickness direction of glass substrate the passing through formed with glacing flatness higher as fine structure
The glass of through hole.In addition, it is an object of the present invention to provide industrial favourable and used laser pulse and have fine knot
The manufacture method of the glass of structure.
Means for solving the problems
The present invention provides a kind of manufacture method of the glass with fine structure, it has irradiates ultrasonic wave to carry out to glass
The etching work procedure of etching, etching solution used includes hydrofluoric acid in the etching work procedure, and 1 in nitric acid, hydrochloric acid and sulfuric acid
The inorganic acid and surfactant of kind of the above, in the etching solution, hydrofluoric acid concentration is the mass % of 0.05 mass %~8.0,
Inorganic acid concentration is the mass % of 2.0 mass %~16.0, and the content of surfactant is 5ppm~1000ppm.
Invention effect
By using the manufacture method of the glass with fine structure of the present invention, the shape in the hole of low pitch can be suppressed
Into manufacturing the hole formed with glacing flatness higher and depth on the thickness direction of substrate or the glass of the fine structure such as groove.Especially
Being to provide a kind of has and the manufacture method of glass with the fine structure of laser pulse, this method suppress possess the fine structure
Low pitch hole formation, obtain on the thickness direction of glass substrate as fine structure formed with glacing flatness higher
The glass of through hole.In addition, it is an object of the present invention to provide industrial favourable and used laser pulse and with fine
The manufacture method of the glass of structure.
Brief description of the drawings
Fig. 1 is the schematic cross-section of the engraving method for the glass substrate for representing the prior art.
Fig. 2 is the glass of the less situation of difference for the etch-rate for representing the prior art, particularly rotten portion and glass substrate
The schematic cross-section of the engraving method of glass substrate.
Fig. 3 is the schematic cross-section for the formation process for representing the rotten portion involved by embodiment 1.
Fig. 4 is to illustrate the assay method of hole after etching, the schematic cross-section of glass substrate involved by embodiment 1.
Fig. 5 is the image of the observation result in the section after the glass substrate etching involved by embodiment 1.
Fig. 6 is the image of the observation result in the section after the glass substrate etching involved by comparative example 1.
Fig. 7 is the image of the observation result in the section after the glass substrate etching involved by embodiment 12.
Fig. 8 is that the glass substrate involved by embodiment 14 is that rotten portion or processing hole form the observation result before rear, etching
Image.
Fig. 9 is the image of the observation result in the section after the glass substrate etching involved by embodiment 14.
Embodiment
The manufacture method of the glass with fine structure of the present invention is characterized in that, have to glass irradiation ultrasonic wave come into
The etching work procedure of row etching, etching solution used includes hydrofluoric acid in the etching work procedure, in nitric acid, hydrochloric acid and sulfuric acid
More than a kind of inorganic acid and surfactant, in the etching solution, hydrofluoric acid concentration is the mass % of 0.05 mass %~8.0,
Inorganic acid concentration is the mass % of 2.0 mass %~16.0, and the content (mass concentration) of surfactant is 5ppm~1000ppm.
The manufacture method of the glass with fine structure of the present invention is preferably also equipped with irradiating to glass before etching work procedure
Laser pulse is so as to the process for forming rotten portion or processing hole.That is, in etching work procedure glass used preferably etching work procedure it
It is preceding to form rotten portion or processing hole.
Before the detailed content of contact etching and processing, to forming rotten portion on glass or processing the process in hole (below,
Also referred to as " rotten portion's formation process ".) be described.
Etch what is removed as predetermined continue through afterwards is formed to form the fine structures such as through hole in glass
The process (method) in rotten portion, can use the method described in Japanese Unexamined Patent Publication 2008-156200 publications.That is, by by wavelength X
Laser pulse lens assemble and expose to glass, the part that laser pulse is irradiated among glass formed rotten portion or add
The method in work hole.
As the glass (hereinafter also referred to as Laser Processing glass) that can be used in the present invention, quartz glass, borosilicate
Sour glass, alumina silicate glass, the silicate glass of soda lime glass or titaniferous are suitable with glass as Laser Processing.
In addition, in these glass, it is substantially free of the alkali-free glass of alkali composition (alkali metal oxide) or only includes micro alkali composition
Glass with lower alkali content etc. is also suitable with glass as Laser Processing.
In addition, in order to effectively improve its absorption coefficient, glass can include selected from Bi, W, Mo, Ce, Co, Fe, Mn, Cr,
At least one kind of of the oxide of metal in V and Cu is used as coloring components.
As pyrex, the #7059 glass that can enumerate Corning companies (is formed using quality representation as SiO2
49%th, Al2O310%th, B2O315%th, RO (alkaline earth oxide) 25%) or Pyrex (registration mark) (glass numberings
7740) etc..
As the embodiment 1 of alumina silicate glass, there can be following composition.
With quality representation, comprising
SiO250~70%,
Al2O314~28%,
Na2O 1~5%,
1~13% and of MgO
The glass composition of ZnO 0~14%.
As the other embodiment 2 of alumina silicate glass, there can be following composition.
With quality representation, comprising
SiO256~70%,
Al2O37~17%,
B2O30~9%,
Li2O 4~8%,
MgO 1~11%,
ZnO 4~12%,
TiO20~2%,
Li2O+MgO+ZnO 14~23%,
The glass composition of CaO+BaO 0~3%.
As the other embodiment 3 of alumina silicate glass, there can be following composition.
With quality representation, comprising
SiO258~66%,
Al2O313~19%,
Li2O 3~4.5%,
Na2O 6~13%,
K2O 0~5%,
R210~18% (wherein, R of O2O=Li2O+Na2O+K2O)、
MgO 0~3.5%,
CaO 1~7%,
SrO 0~2%,
BaO 0~2%,
RO 2~10% (wherein, RO=MgO+CaO+SrO+BaO),
TiO20~2%,
CeO20~2%,
Fe2O30~2%,
0~1% (wherein, TiO of MnO2+CeO2+Fe2O3+ MnO=0.01~3%),
SO30.05~0.5% glass composition.
As the other embodiment 4 of alumina silicate glass, there can be following composition.
With quality representation, comprising
SiO260~70%,
Al2O35~20%,
Li2O+Na2O+K2O 5~25%,
Li2O 0~1%,
Na2O 3~18%,
K2O 0~9%,
MgO+CaO+SrO+BaO 5~20%,
MgO 0~10%,
CaO 1~15%,
SrO 0~4.5%,
BaO 0~1%,
TiO20~1%,
ZrO20~1% glass composition.
As the other embodiment 5 of alumina silicate glass, there can be following composition.
Included with quality representation
SiO259~68%,
Al2O39.5~15%,
Li2O 0~1%,
Na2O 3~18%,
K2O 0~3.5%,
MgO 0~15%,
CaO 1~15%,
SrO 0~4.5%,
BaO 0~1%,
TiO20~2%,
ZrO21~10% glass composition.
Soda lime glass is to be widely used in the glass composition of such as glass sheet.
As the embodiment 1 of the silicate glass of titaniferous, there can be following composition.
Represented with a mole %, comprising
TiO25~25%, and
SiO2+B2O3For 50~79%,
Al2O3+TiO2For 5~25%,
Li2O+Na2O+K2O+Rb2O+Cs2O+MgO+CaO+SrO+BaO is 5~20%
Glass composition.
In addition, in the embodiment 1 of the silicate glass of above-mentioned titaniferous, preferably represented with a mole %, comprising
SiO260~65%, TiO212.5~15%, Na2O 12.5~15%, and SiO2+B2O3For 70~75%.
In addition, in the embodiment 1 of the silicate glass of above-mentioned titaniferous, more preferably meet following formula (Al2O3+TiO2)/
(Li2O+Na2O+K2O+Rb2O+Cs2O+MgO+CaO+SrO+BaO)≤0.9 (in formula, the amount of each component represents for mole %.).
In addition, the other embodiment 2 of the silicate glass as titaniferous, can have following composition.With a mole %
Represent, comprising
B2O310~50%,
TiO225~40%, and
SiO2+B2O3For 20~50%,
Li2O+Na2O+K2O+Rb2O+Cs2O+MgO+CaO+SrO+BaO is 10~40%
Glass composition.
As the embodiment 1 of glass with lower alkali content, there can be following composition.
Represented with a mole %, comprising
SiO245~68%,
B2O32~20%,
Al2O33~20%,
TiO20.1~5.0% (but except 5.0%),
ZnO 0~9%, and
Li2O+Na2O+K2O is the glass composition of 0~2.0% (but except 2.0%).
In addition, in the embodiment 1 of the glass with lower alkali content, as coloring components, preferably represent to include with a mole %
CeO20~3.0%, Fe2O30~1.0%.In addition, in the embodiment 1 of above-mentioned glass with lower alkali content, more preferably it is substantially free of
Alkali metal oxide (Li2O+Na2O+K2O alkali-free glass).
The glass with lower alkali content or alkali-free glass of the above embodiment 1 include TiO2As essential component.The glass with lower alkali content or
TiO in alkali-free glass2Content for 0.1 mole of % less than 5.0 moles of %, from the hole inner wall irradiated by laser
This excellent point of flatness in face sets out, preferably the % of 0.2~4.0 mole of %, more preferably 0.5~3.5 mole, further preferred 1.0
~3.5 moles of %.TiO is moderately included by making to have in the glass with lower alkali content or alkali-free glass that specifically form2Even if pass through phase
Rotten portion can be also formed to energy exposures such as weak laser, and the rotten portion brings and etched by the ultrasonic irradiation of rear process
Such effect can easily be removed.Additionally, it is known that TiO2Combination can be unanimous on the whole with the energy of ultraviolet light, purple can be absorbed
Outer light.TiO is included by appropriateness2, can also as is generally known in a manner of electric charge movement absorbs using with other
The interaction of toner colours to control.Therefore, TiO is passed through2Content adjustment, absorption of the glass to defined light can be made
For appropriateness.By making glass have appropriate absorption coefficient, the formation in the rotten portion for forming hole using etching becomes easy, therefore
From these viewpoints it is also preferred that appropriateness includes TiO2。
In addition, the glass with lower alkali content or alkali-free glass of the embodiment 1 can include ZnO as optional member.It is described low
The content of ZnO is preferably 0~9.0 mole of %, is more preferably 1.0~8.0 moles of %, is further excellent in alkali glass or alkali-free glass
Elect 1.5~5.0 moles of %, particularly preferably 1.5~3.5 moles of % as.ZnO is and TiO2Equally shown in UV light region
Go out the component of absorption, therefore be if the component for carrying out useful effect to glass tape of the invention comprising if.
The glass with lower alkali content or alkali-free glass of the embodiment 1 can contain CeO2As coloring components.Especially by
And use TiO2, rotten portion can be more easily formed.CeO in the glass with lower alkali content or alkali-free glass2Content be preferably 0~3.0
Mole %, more preferably 0.05~2.5 mole of %, more preferably 0.1~2.0 mole of %, particularly preferably 0.2~0.9
Mole %.
Fe2O3Coloring components as the glass used in the present invention are also effective, can also contain Fe2O3.Particularly
By and use TiO2And Fe2O3, or and use TiO2、CeO2And Fe2O3, the formation in rotten portion becomes easy.The glass with lower alkali content
Or Fe in alkali-free glass2O3Content be preferably 0~1.0 mole of %, more preferably 0.008~0.7 mole of %, further preferably
For 0.01~0.4 mole of %, particularly preferably 0.02~0.3 mole of %.
The glass with lower alkali content or alkali-free glass of the embodiment 1 are not limited to the component that the above is enumerated, but by containing appropriateness
Coloring components, can make glass provision wavelengths (below wavelength 535nm) absorption coefficient for 1~50/cm, be preferably 3~
40/cm。
In addition, the other embodiment 2 as glass with lower alkali content, can have following composition.
Represented with a mole %,
SiO245~70%,
B2O32~20%,
Al2O33~20%,
CuO 0.1~2.0%,
TiO20~15.0%,
ZnO 0~9.0%,
Li2O+Na2O+K2The glass composition of O 0~2.0% (but except 2.0%).
In addition, in the embodiment 2 of the glass with lower alkali content, alkali metal oxide (Li is more preferably substantially free of2O+Na2O+
K2O alkali-free glass).
The glass with lower alkali content or alkali-free glass of the embodiment 2 can be with the glass with lower alkali content or alkali-free of the embodiment 1
Glass similarly includes TiO2.TiO in the glass with lower alkali content or alkali-free glass of the embodiment 22Content rub for 0~15.0
Your %, it is preferably 0~10.0 mole of %, more excellent from this excellent point of the flatness of the hole internal face irradiated by laser
Select 1~10.0 mole of %, further preferred 1.0~9.0 moles of %, particularly preferred 1.0~5.0 moles of %.
In addition, the glass with lower alkali content or alkali-free glass of the embodiment 2 can include ZnO.The low alkali of the embodiment 2
The content of ZnO is 0~9.0 mole of %, is preferably 1.0~9.0 moles of %, is more preferably 1.0~7.0 in glass or alkali-free glass
Mole %.ZnO is and TiO2The component of absorption is equally shown in UV light region, thus be if comprising if to the present invention
Glass tape carry out the component of useful effect.
In addition, the glass with lower alkali content or alkali-free glass of the embodiment 2 include CuO.The glass with lower alkali content or alkali-free glass
The content of middle CuO is preferably 0.1~2.0 mole of %, more preferably 0.15~1.9 mole of %, more preferably 0.18~1.8
Mole %, particularly preferably 0.2~1.6 mole of %.By comprising CuO, being coloured in glass, at the wavelength for making regulation laser
Absorption coefficient in appropriate scope, so as to suitably absorb the energy of irradiation laser, and can be readily formed into
For the rotten portion of hole basis of formation.
The glass with lower alkali content or alkali-free glass of the embodiment 2 are not limited to the component that the above is enumerated, but by containing appropriateness
Coloring components, can make glass provision wavelengths (below wavelength 535nm) absorption coefficient for 1~50/cm, be preferably 3~
40/cm。
The glass with lower alkali content or alkali-free glass of the embodiment 1 and 2 can include MgO as optional member.MgO is in alkaline earth
There is the increase for suppressing thermal coefficient of expansion among quasi-metal oxides and strain point will not be made too to reduce such feature,
Also dissolubility is improved, therefore MgO can be contained.The content of MgO is preferably 15.0 to rub in the glass with lower alkali content or alkali-free glass
That below %, more preferably 12.0 moles of below %, more preferably 10.0 moles of below %, particularly preferably 9.5 rub
You are below %.In addition, the content of MgO is preferably 2.0 moles of more than %, more preferably 3.0 moles of more than %, is more preferably
4.0 moles of more than %, particularly preferably 4.5 moles of more than %.
The glass with lower alkali content or alkali-free glass of the embodiment 1 and 2 can include CaO as optional member.CaO and MgO
It is identical, there is the increase for suppressing thermal coefficient of expansion and strain point will not be made too to reduce such feature, also put forward dissolubility
Height, therefore CaO can be contained.In the glass with lower alkali content or alkali-free glass the content of CaO be preferably 15.0 moles of below %, it is more excellent
Elect 12.0 moles of below %, more preferably 10.0 moles of below %, particularly preferably 9.3 moles of below % as.In addition,
The content of CaO be preferably 1.0 moles of more than %, more preferably 2.0 moles of more than %, more preferably 3.0 moles of more than %,
Particularly preferably 3.5 moles of more than %.
The glass with lower alkali content or alkali-free glass of the embodiment 1 and 2 can include SrO as optional member.SrO and MgO
It is identical with CaO, there is the increase for suppressing thermal coefficient of expansion and strain point will not be made too to reduce such feature, also make molten
Solution property improves, therefore in order to which devitrification characteristic and acid proof improvement can contain SrO.In the glass with lower alkali content or alkali-free glass
The content of SrO be preferably 15.0 moles of below %, more preferably 12.0 moles of below %, more preferably 10.0 moles of % with
Under, particularly preferably 9.3 moles of below %.In addition, the content of SrO is preferably 1.0 moles of more than %, more preferably 2.0 rubs
You are more than %, more preferably 3.0 moles of more than %, particularly preferably 3.5 moles of more than %.
" being substantially free of " certain component refers to that the content of the component in glass is less than 0.1 mole of %, preferably smaller than 0.05 rubs
You are %, more preferably 0.01 mole of below %.It should be noted that in this specification, number range (content of each component, by
The calculated value of each component and each physical property etc.) upper limit value and lower limit can be appropriately combined.
The thermal coefficient of expansion of the glass used in the present invention is preferably 100 × 10-7/ DEG C below, more preferably 70 × 10-7/
Below DEG C, more preferably 60 × 10-7/ DEG C below, particularly preferably 50 × 10-7/ DEG C below.In addition, thermal coefficient of expansion
Lower limit is not particularly limited, such as can be 10 × 10-7/ DEG C more than or 20 × 10-7/ DEG C more than.
Thermal coefficient of expansion is carried out as follows measure.First, diameter 5mm, the cylindrical glass specimen of height 18mm are made.Will
Untill it is heated to the yield point of glass specimen from 25 DEG C, by measuring the elongation percentage of glass specimen at each temperature, heat is calculated
The coefficient of expansion.The average value of the thermal coefficient of expansion of 50~350 DEG C of scopes is calculated, mean thermal expansion coefficients can be obtained.Evenly heat
The coefficient of expansion can pass through thermo-mechanical analysis device (TMA:Thermomechanical analyzer) it is measured.Actual
The measure of thermal coefficient of expansion uses the thermo-mechanical analysis device TMA4000SA of NETZSCH companies, in 5 DEG C/min of programming rate
Under the conditions of be measured.
The shape of glass is not limited, such as glass plate can be used.It should be noted that in rotten portion's formation process,
The use of so-called photosensitive glass is not necessary, the scope of machinable glass is very wide.That is, rotten portion of the invention forms work
In sequence, the glass for being substantially free of gold, silver can be processed.
The particularly high glass of rigidity, when laser irradiates, any one of the upper and lower surface of glass is difficult to produce
Raw crackle, can be suitably processed by rotten portion's formation process of the present invention.For example, it is preferable to Young's modulus is 80GPa
Glass above.
It should be noted that absorption coefficient can pass through the transmitance and reflectivity of the glass substrate for measuring thickness t (cm)
To calculate.For the glass substrate of thickness t (cm), using spectrophotometer (for example, the ultraviolet of Japan Spectroscopy Corporation can
See near infrared spectrometer V-670) the transmitance T (%) and incidence angle at wavelength (below wavelength 535nm) place as defined in measure
Reflectivity R (%) under 12 °.By the measured value of gained absorption coefficient is calculated using following formula.
α=(1/t) * ln { (100-R)/T }
The absorption coefficient of the glass used in the present invention is preferably 1~50/cm, more preferably 3~40/cm.
Market is on sale sometimes for the glass enumerated above, can be commercially available.In addition even in market without situation about selling
Under, required glass can be made with known manufacturing process (for example, press over system, float glass process, slot draw method, the tape casting etc.)
Glass, further can obtain the glass composition of target shape by the post-processing such as cutting off, grinding.
In rotten portion's formation process, it can be irradiated to form rotten portion with 1 subpulse.That is, can be by irradiate in this process
The misaligned mode in position irradiates laser pulse to form rotten portion.However, it is also possible to irradiated in a manner of radiation pulses overlap
Laser pulse.
In rotten portion's formation process, usually laser pulse is assembled to focus to the inside of glass with lens.For example, in glass
In the case of forming through hole in glass plate, usually laser pulse is assembled to focus near the center in sheet thickness direction.
It should be noted that only in the case of the upper surface side (light incident side of laser pulse) of processing glass plate, usually by laser pulse
Assemble to focus to the upper surface side of glass plate.On the contrary, only process lower face side (the light incident side phase with laser pulse of glass plate
Anti- side) in the case of, usually laser pulse is assembled to focus to the lower face side of glass plate.As long as however, it can be formed
Glass goes bad portion, can also be by the outside of focusing laser pulses to glass.For example, it is also possible to by focusing laser pulses to glass it
Outside only apart from the upper surface of glass plate or the position of lower surface predetermined distance (such as 1.0mm).In other words, as long as can be on glass
Form rotten portion, can also by focusing laser pulses to from the upper surface of glass to (the advance with laser pulse of nearby direction
Side is in the opposite direction) certain position (upper surface for including glass) within 1.0mm or from the lower surface of glass rearward
Certain position (lower surface position for including glass) or interior within (having passed through the direction that the laser pulse of glass advances) 1.0mm
Portion.
In the case of nanosecond laser or its device, the pulse width of laser pulse is preferably 1~200ns (nanosecond), more
Preferably 1~100ns, more preferably 5~50ns.In addition, if pulse width is more than 200ns, the spike of laser pulse
Value reduces, and can not be processed well sometimes.The laser being made of the energy of 5~100 μ J/ pulses is exposed into above-mentioned laser
Processing glass.By increasing the energy of laser pulse, increase the length in rotten portion with being proportional to.Laser pulse
Beam quality M2Value can be such as less than 2.By using M2It is worth the laser pulse for less than 2, small pore or small recessed
The formation of groove becomes easy.It should be noted that it is following, in the present specification, unless stated otherwise, with the relevant explanation of laser
It is related to nanosecond laser or its device.
In rotten portion's formation process, laser pulse can be Nd:The higher hamonic wave of YAG laser, Nd:YVO4The high order of laser
Harmonic wave or Nd:The higher hamonic wave of YLF Lasers.Higher hamonic wave is such as the second higher hamonic wave, the 3rd higher hamonic wave or the 4th high order
Harmonic wave.The wavelength of second higher hamonic wave of these laser is near 532~535nm.The wavelength of 3rd higher hamonic wave for 355~
Near 357nm.The wavelength of 4th higher hamonic wave is near 266~268nm.By using these laser, can inexpensively add
Work glass.
As the device for the Laser Processing being applicable in for the portion's formation process that goes bad, can enumerate for example, Coherent companies
The high of system repeats solid pulse UV laser:AVIA355-4500.In the device, as the 3rd higher hamonic wave Nd:YVO4Laser, weight
Complex frequency can obtain the maximum laser power of 6W or so when being 25kHz.The wavelength of 3rd higher hamonic wave is 350~360nm.
The wavelength of laser pulse is preferably below 535nm, for example, can be the scope of 350~360nm.On the other hand, if
The wavelength of laser pulse is more than 535nm, then point of irradiation becomes larger, and the making of small construction becomes difficult, and by the influence of heat
Cause easily to crack around point of irradiation.
As typical optical system, the laser of vibration is extended to 2~4 times (on the time point with optical beam expander
7.0~14.0mm of processing department spot diameter φ), with after the core of variable aperture cutting laser with galvanometer mirror tune
Whole optical axis, adjusts focal position with the f θ lens of 100mm or so and converges to glass.
The focal length L (mm) of lens in the scope of such as 50~500mm, can also be selected from the scope of 100~200mm.
In addition, the beam diameter D (mm) of laser pulse can also be selected from 3~20mm in the scope of such as 1~40mm
Scope.Here, beam diameter D is the beam diameter of laser pulse when being incident to lens, is referred to relative to the strong of beam center
Intensity reaches [1/e for degree2] times scope diameter.
In rotten portion's formation process, the value i.e. value of [L/D] of focal length L divided by beam diameter D are more than 7, are preferably more than 7
Less than 40 or more than 10 and less than 20.The value is the value related with exposing to the convergence of the laser of glass, which gets over
It is small, represent that laser converges at part, is more difficult to make uniform and long rotten portion.If the value is less than 7, near beam waist
Laser power is too strong, produces and easily cracks the problem of such in inside glass.
In rotten portion formation process, it is not necessary to which processing (promotes for example, being formed before laser pulse pre-irradiation carries out glass
The film of the absorption of laser pulse).However, as long as the effect of the present invention can be obtained, such processing can also be carried out.
Change the size of aperture and laser diameter is changed so as to so that opening number (NA) change to 0.020~
0.075.If NA becomes too much, the energy of laser only concentrates near focal point, it is impossible on the thickness direction of glass effectively
Form rotten portion.
And then by irradiating the less pulse lasers of NA, just formed using pulsatile once irradiation relatively long on thickness direction
Rotten portion, therefore the raising to productive temp is effective.
It is preferred that repetition rate is set to 10~25kHz to sample irradiation laser.Additionally by the thickness direction of glass
Change focal position, the position (upper surface side or lower face side) in the rotten portion formed on glass can be adjusted to most suitable.
Further by the control from control PC, laser output, action of galvanometer mirror etc. can be controlled, is based on
Drawing data is tieed up with the 2 of the making such as CAD software, laser can be exposed on glass substrate with defined speed.
The part being irradiated with a laser forms the rotten portion different from the other parts of glass.The rotten portion can be shown by optics
Micro mirror etc. easily distinguishes.Each glass has differences because of composition, but rotten portion is formed as a generally cylindrical.Rotten portion
Reach near the upper surface of glass near lower surface.
It is believed that rotten portion is to be irradiated by laser photochemically reactive to occur, the defects of E ' centers and non-bridging oxygen, produces
Raw position, either by laser illumination bands Lai instant heating or rapid cooling produce, maintain it is sparse in high-temperature area
Glass structure position.
The present invention rotten portion's formation process involved by and with laser irradiation and wet etching venting techniques in, can
Rotten portion is formed with the irradiation of a laser pulse.
As the condition selected in rotten portion's formation process, can enumerate for example, the absorption coefficient of glass is 1~50/cm, swashs
Light impulse length is 1~100ns, the energy of laser pulse is 5~100 μ J/ pulses, wavelength is 350~360nm, laser pulse
Beam diameter D be 3~20mm and combination that the focal length L of lens is 100~200mm.
In addition, as needed, before etching is performed in order to reduce the deviation of the diameter in rotten portion, can to glass plate into
Row grinding.Die down if overgrinding to the etch effect in the portion that goes bad, therefore the depth ground is preferably the upper table from glass plate
Play 1~20 μm of depth in face.
The size in the rotten portion formed in rotten portion's formation process is according to the beam diameter D of laser when being incident to lens, saturating
The focal length L of mirror, the absorption coefficient of glass, laser pulse power etc. and change.A diameter of such as the 5 of the rotten portion of gained
~200 μm or so or 10~150 μm or so.In addition, the depth in rotten portion is because of above-mentioned laser irradiation condition, glass
Absorption coefficient, the thickness of slab of glass and it is different, can be such as 50~300 μm or so.
In addition, by the way that multiple holes are continuously formed, groove can be formed.In this case, by be arranged as wire
Mode irradiate multiple laser pulses, form the multiple rotten portions for being configured to wire.Thereafter, it is recessed to be formed by etching rotten portion
Groove.The irradiation position of multiple laser pulses can be misaligned, and for by etching the hole formed, adjacent hole can tie each other
Close.
In addition, the mode of the above is not limited to as the method for forming rotten portion.For example, it is also possible to by from foregoing
The irradiation of femtosecond laser and formed rotten portion or processing hole.The situation of femtosecond laser or its device, as long as realizing the present invention
Effect, do not limit special condition.For example, the pulse width of laser pulse is preferably 100~2000fs (femtosecond),
More preferably 200~1000fs.It is preferred that repetition rate is set to 0.5~10kHz to sample irradiation laser.The energy of laser pulse
Preferably 1~20 μ J/ pulses.Additionally, it is preferred that adjustment optical system, so that the laser pulse of 1~20 μ J of every 1 pulse is in target glass
The hot spot of 1~30 μm of processing department spot diameter φ is formed on glass.In femtosecond laser or its device, can use will be above-mentioned suitable
Condition it is appropriately combined obtained by condition.
Furthermore it is possible to be pre-formed processing hole in glass substrate to replace rotten portion, and pass through the etching of rear process
Process ultimately forms the structures such as through hole.The process for forming the processing hole is such process:To for example appropriate glass substrate
(for example, reducing to higher silicate glass containing Ti of effect of the processing threshold value of Laser Processing etc.) irradiation possesses defined spy
Property laser so that by melt or evaporate formed processing hole.As the laser aid used, preferably such as centre wavelength
For 266nm or the YAG laser of 355nm (5~8nm of pulse width), wherein, the focal length L (mm) of lens is such as 50~500mm's
Scope, repetition rate are set to 10~25kHz, irradiate laser 0.5~10 second to glass.
By laser ablation, hole or the groove of 10~100 μm or the diameter more than it itself can be being formed, thus it is logical
Cross and be used in combination with the etching and processing of rear process, expansion except aperture, in addition to the raising of glacing flatness, also having makes the broken of processing department periphery
The deformation position of the glass such as piece becomes unobvious, or removes the effect of fine crackle.
As long as by being used in combination for the etching work procedure with rear process, fine structure can be formed on the glass substrate, and go bad portion
Forming method be just not limited to above method.
The manufacturing method of the present invention has the etching work procedure to glass irradiation ultrasonic wave.Cavitate, vibrate caused by ultrasonic wave
The product that acceleration and current promotion etching solution and etching tape come disperses untill fine hole or inside grooves.By
The irradiation of ultrasonic wave is carried out during etching, eliminates the difference in the substrate surface of fine hole or groove and the internal etching carried out
It is different, fine, gradient big (high straightness) and deep hole or groove can be formed.
When the ultrasonic wave is conducted in a liquid, produce and the phenomenon in cavity is formed in liquid cavitate.Cavitation erosion is when extremely short
It is interior to boost and be depressured repeatedly, stretched or compressed while hydrone is vibrated, so as to promote etching solution or etching tape
The product come is moved untill fine hole or the inside of groove.If however, improve frequency of oscillation, the threshold for generation of cavitating
Value improves, particularly if being then increased sharply to exponential function formula more than 100kHz and making cavitation erosion become difficult to occur.From elimination
In the substrate surface of fine hole or groove and the internal etch differential carried out, it is big and deep that fine, gradient can be formed
The point of hole or groove sets out, ultrasonic irradiation etching frequency of oscillation be preferably below 120kHz scope, more preferably 10~
120kHz, occurs the point sufficiently to cavitate from etching solution, more preferably 20~100kHz.The frequency of oscillation
The frequency of oscillation that two or more kinds may be used.
As the intensity of ultrasonic wave, it is not particularly limited, is preferably 0.10~5.0W/cm2, more preferably 0.15~
4.0W/cm2, more preferably 0.20~3.0W/cm2.As long as the ultrasonic intensity in the scope, in processed glass
In the range of not damaging, the intensity of the ultrasonic wave of irradiation can be improved.Selection above range in ultrasonic wave intensity be because
Promote the effect increase of the exchange of the etching solution near inside and outside fine structure, so it is preferred that.The intensity of ultrasonic wave represents output work
The floor space of rate (unit W) divided by etching groove (unit cm2) obtained value.
For ultrasonication, it is not particularly limited, known device can be used.It is, for example, possible to use W-113
(model, exports 100W, frequency of oscillation 28kHz/45kHz/100kHz, Honda Electronic's system, groove size:W240×
D140 × H100 (unit mm)) or US-3R (model, output power 120W, frequency of oscillation 40kHz, AS ONE Co., Ltd.
System, groove size:W303 × D152 × H150 (unit mm)) etc..
In etching work procedure, in order to carry out the etching only from unilateral, can glass plate upper surface side or under
Face side coating surface protection fruit glaze agent is protected.As such surface protection fruit glaze agent, commercially available product can be used, can be lifted
Go out for example, Silitect-II (Trylaner International company systems) etc..
Etching solution in the ultrasonic irradiation etching of the present invention includes hydrofluoric acid, a kind in nitric acid, hydrochloric acid and sulfuric acid
Inorganic acid above, and surfactant.As long as without prejudice to the effect of the present invention, etching solution can also include other compositions.Make
For such other compositions, the inorganic acid beyond hydrofluoric acid, nitric acid, hydrochloric acid and sulfuric acid, ethanedioic acid, tartaric acid, iodine second can be enumerated
The organic acids such as acid, fumaric acid, maleic acid, chelating agent etc..Chelating agent is by complexing of metal ionization so as to prevent from being re-attached to base
Plate surface, therefore be effective.As chelating agent, dimethyl glyoxime, dithizone, oxyquinoline, ethylenediamine tetrem can be enumerated
Acid, nitrilotriacetic acid, hydroxy ethylene diphosphonic acid (HEDP), nitrilo trimethylene phosphonic acids (NTMP) etc..HEDP and NTMP
It is high in the dissolubility of the acidic region of hydrofluoric acid system, it is effective.In addition, etching solution can also be substantially free of these other into
Point.Etching solution " is substantially free of " certain component and refers to, the content of the component is less than 1.0 mass %, preferably smaller than 0.5 in etching solution
Quality %, more preferably less than 0.1 mass %.
As the surfactant that can be used in the present invention, amphoteric surfactant can be enumerated, cationic surface is lived
Property agent, anion surfactant, nonionic surfactant etc..If in the range of the effect without prejudice to the present invention,
These and can also use two or more with a kind of exclusive use.As amphoteric surfactant, 2- alkyl-N- carboxylic first can be enumerated
Base-N- hydroxyethyl imidazolines glycine betaine, coco-nut oil fatty acid amido propyl betaine, coconutalkyl alanine sodium,
Lauryl amino dipropionic acid etc..As cationic surfactant, quaternary ammonium salt can be enumerated (for example, lauryl trimethyl chlorination
Ammonium), higher amines halate (for example, hard tallow amine), haloalkylpyridin system (for example, chlorinated dodecane yl pyridines) etc..
As anion surfactant, alkyl sulfate salt, alkylaryl sulfonates, alkyl ether sulphate salts, alpha-olefin can be enumerated
Sulfonate, alkylsulfonate, alkylbenzenesulfonate, alkylnaphthalene sulfonate, taurine system surfactant, methyl amimoacetic acid system surface are lived
Property agent, isethionate system surfactant, N- acyl acidic amino acids system surfactant, alkylphosphonate, height
Level soap and acylation polypeptide etc..As nonionic surfactant, the polyoxies such as polyoxyethylene ether can be enumerated
Alkylidene alkyl ether;Polyoxyethylene phenyl ether;Polyether polyols derivative;Polyoxyethylene amine, polyoxy
Ethylidene fatty acid amide, polyoxyethylene aliphatic acid diphenyl ether, polyoxyethylene fatty acid ester, polyoxyethylene dehydration mountain
The polyoxyethylene derivative such as pears sugar alcohol fatty acid ester;Mono-fatty acid glyceride;Polyglyceryl fatty acid ester;Sorbitan alcohol ester
Fat acid esters;Sucrose fatty ester;Polyoxyethylene castor oil;Polyoxyethylene hardened castor oil etc..For example, above-mentioned either table
The carbon number of the alkyl of face activating agent can be 6~20 or 8~18.
It is expressed as follows using the dissolving reaction of the glass of hydrofluoric acid.
SiO2+6HF→2H2O+H2SiF6
Etching speed accelerates if hydrofluoric acid concentration is improved, if but etching speed it is too fast can not fully keep up with ultrasonic wave photograph
The flowing for the product that the etching solution and etching tape of fine hole or inside grooves caused by penetrating promotes.
Hydrofluoric acid concentration contained by etching solution is the mass % of 0.05 mass %~8.0, from the erosion eliminated using ultrasonic irradiation
In the substrate surface of fine hole or groove and the difference of the internal etching carried out in quarter, it is big that fine and gradient can be formed
Deep hole or the point of groove set out, be preferably the matter of the mass %, more preferably 0.20 mass % of 0.10 mass %~7.0~5.0
Measure %.By reducing hydrofluoric acid concentration, the gradient in formed hole can be improved, but lost if undue reduction hydrofluoric acid concentration
Etching speed is slack-off, and treatment effeciency is unnecessarily deteriorated.
The fluoride and the solubility of silicofluoride produced in the etching of glass caused by hydrofluoric acid is relatively low, therefore easily stays
The progress of etching is hindered in fine hole or inside grooves.
Etching solution includes the situation of hydrofluoric acid and the nitration mixture of more than a kind of the inorganic acid in nitric acid, hydrochloric acid and sulfuric acid
Under, the ionization of nitric acid, hydrochloric acid and sulfuric acid causes H+Fully exist, so that Balance be moved to the left.Free F-Become
It is few, therefore the generation of fluoride and silicofluoride is suppressed, it can stably keep hole fine caused by ultrasonic irradiation
Or the flowing of the product of the etching solution and etching tape of inside grooves.During the concentration of simple reduction hydrofluoric acid, it is possible to reduce trip
From F-, but etching also becomes difficult to carry out, therefore suppress free F by strong acid-Generation it is preferable.If improve nitric acid, hydrochloric acid and
Then etch-rate accelerates the concentration of sulfuric acid, but fine caused by ultrasonic irradiation can not be fully kept up with if etch-rate is too fast
The flowing for the product that the etching solution and etching tape of hole or inside grooves are come promotes.
Improve wellability of the etching solution to glass by adding surfactant, can make etching solution come in and go out micropore or
The inside of groove becomes easy.The removal of the dirt further obtained by surfactant, the weight for preventing particle and product
The effect newly adhered to, can also keep the etching of hole fine caused by ultrasonic irradiation or inside grooves to carry out well.For
The effect of decontamination is improved, the amount of surfactant can be increased, if but increasing and at most having the problem of blister band comes and flushing
Trouble.Surfactant adds 5ppm with regard to that can obtain effect.
Inorganic acid (preferably nitric acid) concentration of more than a kind contained in nitric acid, hydrochloric acid and sulfuric acid is in etching solution
The mass % of 2.0 mass %~16.0, in the etching using ultrasonic irradiation, from eliminating in fine hole or the substrate table of groove
Face and the difference of the internal etching carried out, the point that can form the big deep hole of fine and gradient or groove set out, preferably
For the mass % of the mass % of 2.5 mass %~15.0, more preferably 3.0 mass %~14.0.
The content (mass concentration) of surfactant contained by etching solution is 5ppm~1000ppm, is utilizing ultrasonic irradiation
Etching in, from the difference eliminated in the substrate surface of fine hole or groove and the internal etching carried out, can be formed fine
And set out in terms of the big deep hole of gradient or groove, preferably 10ppm~800ppm, more preferably 15ppm~
600ppm.The content of surfactant can use such as high performance liquid chromatography (HPLC/High Performance Liquid
Chromatography) measure.
The temperature of etching period and etching solution can make choice according to the shape in rotten portion, target machining shape.Need
Illustrate, the temperature of etching solution when being etched by improving, can improve etching speed.In addition, etching speed can also lead to
The composition of overetch liquid adjusts.In the manufacturing method of the present invention, etching speed is with the etching of the glass substrate beyond the portion that goes bad
Speed represents, is not particularly limited, and is preferably 0.1~9.0 μm/min, more preferably 0.2~7.0 μm/min, further excellent
Elect 0.5~6.0 μm/min as.Furthermore, it is possible to by etching condition come the diameter of control hole.
Etching period is related with the thickness of slab of glass plate, therefore is not particularly limited, and is preferably 30~180 minutes or so.For
Adjustment etch-rate can change the temperature of etching solution, be preferably 5~45 DEG C or so, more preferably 15~40 DEG C or so.Can
To process at a temperature of more than 45 DEG C, but the volatilization of etching solution is very fast therefore impracticable.Can also be at the temperature below 5 DEG C
Processing, but it is unpractical that etch-rate, which becomes the situation of extremely slow temperature,.
The etching solution of the present invention can be obtained by the way that above-mentioned each component is mixed in a solvent.Solvent does not limit especially
It is fixed, it is preferably water.
In the glass with fine structure obtained by the manufacturing method of the present invention, hole gradient is in the laser pulse plane of incidence
In both (the first face) and its opposing face (the second face), from the high aspect of glacing flatness, it is preferably more than 80 degree, is more preferably
More than 85 degree.Described in the embodiment of the assay method of hole gradient as be described hereinafter.In addition, obtained by the manufacturing method of the present invention
The glass with fine structure in, opening diameter is preferably 20~110 μm, more preferably 25~100 μm, more preferably 30~
95μm.Opening diameter can be calculated by the image used in the observation of hole gradient.
Embodiment
Then, enumerate embodiment and further specifically describe the present invention, but the present invention and from any of these embodiments
Limit, the people for having common knowledge in this area in the technological thought of the present invention can carry out various deformation.
[embodiment 1]
Using the glass substrate for the 30mm × 30mm × t0.52mm being made of the component of the glass sample 1 of table 1 below as examination
Sample uses.
[table 1]
※ units are mole %
< goes bad portion formation process >
The high of Coherent company systems has been used to repeat solid pulse UV laser using the formation in the rotten portion of laser:
AVIA355-4500.As the 3rd higher hamonic wave Nd:YVO4Laser, repetition rate can obtain 6W or so most when being 25kHz
Big laser power.The dominant wavelength of 3rd higher hamonic wave is 355nm.
The laser pulse projected by laser aid (pulse width 9ns, power 1.2W, beam diameter 3.5mm) is used into light beam
Expander extends to 4 times, and the adjustable iris ring of scope used in 5~15mm of diameter cuts the light beam after the expansion
Cut, optical axis is adjusted with galvanometer mirror, light beam is incident to the inside of glass plate using the f θ lens of focal length 100mm.Pass through
Changing the size of aperture makes laser diameter change so that NA is changed to 0.020~0.075.At this time, converge to laser
Leave the upper surface physical length only position of 0.15mm of glass plate.Make laser in a manner of radiation pulses are misaligned with 400mm/
The speed of second is scanned.
Laser light irradiation after, in the glass that sample is confirmed with light microscope, be irradiated with a laser be formed in part with
The different rotten portion of other parts.Although each glass has differences, rotten portion is formed as a generally cylindrical, as shown in figure 3,
Reach near the upper surface of glass near lower surface.
By repetition rate be set to 10~25kHz to sample irradiation laser.In addition, by changing on the thickness direction of glass
Become focal position, the position (upper surface side or lower face side) in the rotten portion formed on glass is adjusted to most suitable.
<Ultrasonic irradiation etching work procedure>
Using the 1L containers of polyethylene as etching groove, using pure water as the ratio that solvent is recorded according to table 2 coordinate it is following into
Divide so as to make etching solution.
The gloomy field chemical industry of hydrofluoric acid 46%
1.38 60% Northeast of nitric acid chemistry
High-performance nonionic surfactant NCW-1001 (30% aqueous solution of polyoxyalkylene alkyl ether) and light are pure
Medicine industry
[table 2]
Component | Embodiment 1 |
Hydrofluoric acid (quality %) | 2.0 |
Nitric acid (quality %) | 6.0 |
Surfactant※(ppm) | 15 |
※ removes the component amount of solvent
Water is added into ultrasonic bath to defined water level, the etching solution for adding the component with table 2 is set wherein
Etching groove, heating etching solution cause liquid temperature to reach 30 DEG C.Said sample (glass substrate) is stood on to the box made of vinyl chloride
In and be put into etching groove, irradiate 40kHz, 0.26W/cm2Ultrasonic wave.Ultrasonic irradiation causes the temperature of etching solution to rise, because
This exchanges the part water of ultrasonic bath to be kept for 30 DEG C ± 2 DEG C.Midway pull-up sample, etching speed is obtained by the change of substrate thickness
Rate, determines etching period so as to implement to etch in a manner of substrate thickness at the end of etching is 440 μm, obtains with fine structure
Glass.Sample obtained by pull-up, is fully rinsed with pure water, drying is allowed to hot wind.
The intensity of ultrasonic wave is set to output power (unit W) divided by floor space (the unit cm of etching groove2) obtained value.Make
For ultrasonic bath, US-3R (model, output power 120W, frequency of oscillation 40kHz, AS ONE Co. Ltd. systems, groove ruler have been used
It is very little:W303 × D152 × H150 (unit mm)).
Sample is cut off with glass cutting machine, and uses the grinding slice lapping section of #1000, #4000 successively.If etch at this time
Rotten portion expose on section, then can not observe the profile of script, therefore adjust amount of grinding and be allowed to not expose.Surveyed as image
Determine device, using CNC image measuring systems NexivVMR-6555 (model, Co., Ltd.'s Nikon systems, multiplying power 8, the visual field 0.58 ×
0.44 (unit mm)), by the analyzer from cross-wise direction (thickness direction) sample, by focus be aligned to etching after hole
Portion.By the angle being made of at 2 shown in 51a and 51b in each face of the analyzer measurement chart 4 substrate surface and hole side,
And value is averaged as hole gradient.The hole gradient of the laser pulse plane of incidence (hereinafter referred to as " the first face ") is 86 degree, phase
The hole gradient of reverse side (hereinafter referred to as " the second face ") is 86 degree.In addition, opening diameter is by the figure that is used in the observation of hole gradient
As calculating.The image actually observed figure 5 illustrates.
As described in Example 1, by carrying out having used the present invention in the fine rotten portion that glass is formed and processing hole
Etching solution ultrasonic irradiation etching, required hole (flat hole) fine, hole gradient is big and deep can be formed.
Cavitation erosion, vibration acceleration and current promotion etching solution that irradiation ultrasonic wave is brought and the product that etching tape comes disperse
To the inside in fine hole.
The hydrofluoric acid concentration and concentration of nitric acid of etching solution are adjusted, is caused so as to adjust etching speed with keeping up with ultrasonic irradiation
Fine hole etching solution and etching tape come product flowing promote.Nitric acid further suppresses to generate in fine hole
Solubility low fluoride and silicofluoride, can stably keep the etching solution inside hole fine caused by ultrasonic irradiation
The flowing of the product come with etching tape.
Surfactant makes etching solution improve the wellability of glass, becomes the inside of etching solution discrepancy micropore or groove
Readily meanwhile, it is capable to prevent from being attached to inside the hole of product, and be maintained at micro- caused by ultrasonic irradiation well
Thin hole or the progress of the etching of inside grooves.
Based on these reasons, the substrate surface in the etching of ultrasonic irradiation, eliminated in fine hole or groove is utilized
The difference of the etching carried out with inside, can form hole (flat hole) fine, that gradient is big and deep.
As the variation of embodiment 1, as long as the structure that the glass used in ultrasonic irradiation etching has is etched in
The rotten portion formed on glass and structure can obtain required shape, can penetrate through, it is possibility to have and bottom, can be hole,
It can be groove.
On the frequency of oscillation of the ultrasonic wave of embodiment 1, multiple frequencies can be vibrated successively, can also be vibrated at the same time multiple
Frequency, can also be modulated.
Hole gradient improves if the intensity of ultrasonic wave is improved, if improving the temperature of etching solution or improving hydrofluoric acid or choosing
From the concentration of more than a kind inorganic acid in nitric acid, hydrochloric acid and sulfuric acid, then hole gradient is reduced rather than etching speed and accelerates.Can be with
Ultrasonic intensity, etch temperature and etching solution match ratio are properly selected according to required gradient and processing speed.
As the variation of embodiment 1, usable hydrochloric acid or sulfuric acid replace the nitric acid coordinated in etching solution.
Can be beyond polyethylene as long as etching groove has patience to etching solution as the variation of embodiment 1
General-purpose plastics or engineering plastics, can be metals or to metal to improve the propagation efficiency of ultrasonic wave
Implement the product of cladding.
As the variation of embodiment 1, in ultrasonic irradiation etching process, sample and ultrasonic irradiation direction can be made
It is parallel, can also be vertical with ultrasonic irradiation direction, in order to reduce ultrasonic wave it is uneven caused by influence, examination can be shaken
Sample, can also spinning sample.
[embodiment 2~6]
In addition to changing into the etching condition (etching solution forms and etching speed) shown in table 3, same as Example 1ly
Ultrasonic irradiation etching is carried out, manufactures the glass with fine structure.The condition and evaluation result of etching are shown in table 3.
In embodiment 2~6, the thickness before the species of sample (glass substrate), the etching of sample and the thickness after etching
Same as Example 1, the composition of etching solution is different from embodiment 1.
In embodiment 2, compared with the etching solution of embodiment 1, the hydrofluoric acid concentration of etching solution is reduced to 0.2 mass %,
Concentration of nitric acid is increased into 14.0 mass %, and the content of surfactant is increased into 150ppm.In embodiment 3, embodiment 1
Etching solution compare, the hydrofluoric acid concentration of etching solution is increased into 5.0 mass %, and concentration of nitric acid is increased into 14.0 matter
Measure %.The two has obtained the good through hole of more than 85 degree of hole gradient.
In addition, in embodiment 4, compared with the etching solution of embodiment 1, the concentration of nitric acid of etching solution is reduced to 3.0 matter
% is measured, in embodiment 5, compared with the etching solution of embodiment 1, concentration of nitric acid is increased into 14.0 mass %, and by surface-active
The content of agent increases to 150ppm.The two has obtained the good through hole of more than 85 degree of hole gradient.
Further in embodiment 6, surfactant is increased to relative to the content of the etching solution of embodiment 5
500ppm, as a result can obtain the good through hole of more than 85 degree of hole gradient.
[table 3]
※ removes the component amount of solvent
[embodiment 7~9]
In addition to changing into the etching condition (etching solution composition, ultrasonic irradiation condition and etching speed) shown in table 4,
Ultrasonic irradiation etching is carried out same as Example 1ly, manufactures the glass with fine structure.The condition and evaluation result of etching exist
Shown in table 4.
In embodiment 7~9, the thickness before the species of sample (glass substrate), the etching of sample and the thickness after etching
It is same as Example 1.The composition of etching solution is identical in embodiment 7~9, and the condition of ultrasonic irradiation is respectively different.Embodiment 7
The ultrasonic wave of frequency of oscillation 28kHz is irradiated during middle etching process, the ultrasonic wave of frequency of oscillation 45kHz is irradiated in embodiment 8.The two
It is a large amount of to produce cavitation erosion, obtain the good through hole (flat hole) of more than 85 degree of hole gradient.
As ultrasonic bath, W-113 (model, the output 100W, frequency of oscillation 28kHz/ of modifiable frequency of oscillation have been used
45kHz/100kHz, Honda Electronic's system, groove size:W240 × D140 × H100 (unit mm)).
The ultrasonic wave of frequency of oscillation 100kHz has been irradiated in embodiment 9.Cavitation erosion is nearly free from, and hole gradient is first
Face is 81 degree, is 82 degree in the second face, and hole gradient reduces compared with the result implemented under the frequency of oscillation lower than this.
Intensity by improving ultrasonic wave can improve hole gradient, therefore be beneficial for easily impaired sample, but than this
The threshold value that the frequency of oscillation of higher produces cavitation erosion steeply rises therefore not preferred.
[comparative example 1]
The etching solution of surfactant, 0.5 mass % of hydrofluoric acid, 3.0 mass % of nitric acid are not being added in 30 DEG C of condition
Under, sample (glass sample 1) same as Example 1 is stirred using blender without using ultrasonic wave, and etch with
Reach substrate thickness same as Example 1.For the glass of gained, hole gradient is determined same as Example 1ly.Institute
In the glass obtained, the first face of hole gradient is 76 degree, and the second face is 77 degree, and substantially there occurs closing waist in the hole of perforation.It is actual to see
The image observed figure 6 illustrates.
[comparative example 2]
The etching solution of surfactant, 2.0 mass % of hydrofluoric acid, 3.0 mass % of nitric acid are not being added in 30 DEG C of condition
Under, 40kHz, 0.26W/cm are irradiated to sample (glass sample 1) same as Example 12Ultrasonic wave, be etched to hole and passed through
Untill logical.For the glass of gained, hole gradient is determined same as Example 1ly.In the glass of gained, hole gradient
First face is 72 degree, and the second face is 73 degree, and substantially there occurs closing waist in the hole of perforation.
[table 4]
※ removes the component amount of solvent
As described above, confirming the formation in the hole that can suppress low pitch by the manufacturing method of the present invention, obtain
The glass with fine structure of the fine structures such as glacing flatness higher, deeper hole or groove is formd on the thickness direction of substrate.
[embodiment 10~12]
Using the glass substrate for the 30mm × 30mm × t0.52mm being made of the component of the glass sample 2~4 of table 1 as examination
Sample uses.In addition to being changed to etching condition as shown in table 5, ultrasonic irradiation etching is carried out same as Example 1ly, is made
The glass with fine structure is made.The condition and evaluation result of etching are is shown in table 5.Either case can obtain hole inclination
The good through hole that more than 85 degree of degree.To the image that embodiment 12 as an example is observed figure 7 illustrates.
[table 5]
※ removes the component amount of solvent
[embodiment 13]
Nitric acid is replaced as inorganic acid, 2.0 matter of hydrofluoric acid using hydrochloric acid (35.0-37.0% aqueous solutions Northeast chemistry)
Under conditions of 30 DEG C of etching solution for measuring %, 6.0 mass % of hydrochloric acid, surfactant 150ppm, to sample same as Example 1
Irradiate 40kHz, 0.26W/cm2Ultrasonic wave, be etched to hole perforation untill.Except be changed to the condition described in table 6 with
Outside, the glass with fine structure has been obtained same as Example 1ly.In the glass of gained, the first face of hole gradient is 85
Degree, the second face are 88 degree, can obtain the good through hole of more than 85 degree of hole gradient.The condition and evaluation result of etching exist
Shown in table 6.
[table 6]
※ removes the component amount of solvent
[embodiment 14]
The substrate of 30mm × 30mm × t0.50mm of synthetic quartz (SHIN-ETSU HANTOTAI's chemical industry) has been used as glass sample.
Use femtosecond laser using the formation in the rotten portion of laser, export 6 μ J, 9 μm of processing department spot diameter Φ, pulse width 800fs,
Repetition rate 2kHz, process velocity are irradiated under conditions of 0.2mm/ seconds.It can confirm that to have irradiated with light microscope and swash
The rotten portion of about 10 μm of the diameter different from other parts or fine cavity are formd in the part of light.It was observed that image exist
Shown in Fig. 8.
In addition to changing into the etching condition (etching solution composition, ultrasonic irradiation condition and etching speed) shown in table 7,
Ultrasonic irradiation etching is carried out same as Example 1ly, manufactures the glass with fine structure.In the glass of gained, hole gradient
The first face be 90 degree, the second face be 89 degree, substantially vertical through hole has been obtained in synthetic quartz.The condition of etching and comment
Valency result is shown in table 7.Further, it was observed that image figure 9 illustrates.
[table 7]
※ removes the component amount of solvent
[comparative example 3]
It is right under conditions of 30 DEG C of the etching solution of hydrofluoric acid, 14.0 mass % of nitric acid, surfactant 150ppm is not added
Sample irradiation 40kHz, 0.26W/cm same as Example 12Ultrasonic wave.Even if implement 3 it is small when etching glass substrate
Thickness does not also change, and also cannot get through hole.Being etched if not adding hydrofluoric acid to carry out, it is impossible to form hole in glass
With the fine structure such as groove.
[comparative example 4]
It is right under conditions of 30 DEG C of the etching solution of nitric acid, 2.0 mass % of hydrofluoric acid, surfactant 150ppm is not added
Sample irradiation 40kHz, 0.26W/cm same as Example 12Ultrasonic wave, be etched to hole perforation untill.The glass of gained
In glass, the first face of hole gradient is 78 degree, and the second face is 81 degree, cannot with the addition of such 80 degree of hole gradient during nitric acid
Through hole above.
[comparative example 5]
Improving the erosion of concentration of nitric acid, 2.0 mass % of hydrofluoric acid, nitric acid 20.0 mass %, surfactant 150ppm
Under conditions of carving 30 DEG C of liquid, 40kHz, 0.26W/cm are irradiated to sample same as Example 12Ultrasonic wave, be etched to
Untill hole penetrates through.In the glass of gained, the first face of hole gradient is 78 degree, and the second face is 79 degree, cannot get hole gradient
For more than 80 degree through holes.
[table 8]
※ removes the component amount of solvent
Industrial applicibility
By the present invention the glass with fine structure manufacture method can be inhibited low pitch hole formation,
Glacing flatness higher, the glass with fine structure formed with the fine structure such as deep hole or groove on the thickness direction of substrate.
Claims (10)
1. a kind of manufacture method of the glass with fine structure, it has the etching work for irradiating ultrasonic wave to glass to be etched
Sequence, etching solution used includes in the etching work procedure
Hydrofluoric acid,
More than a kind of the inorganic acid in nitric acid, hydrochloric acid and sulfuric acid, and
Surfactant;
In the etching solution, hydrofluoric acid concentration is the mass % of 0.05 mass %~8.0, inorganic acid concentration for 2.0 mass %~
16.0 mass %, the content of surfactant is 5ppm~1000ppm.
2. the manufacture method of the glass according to claim 1 with fine structure, also has to glass before etching work procedure
Glass irradiation laser pulse is so as to the process for forming rotten portion or processing hole.
3. the manufacture method of the glass according to claim 1 or 2 with fine structure, wherein, the vibration of ultrasonication
Frequency is below 100kHz.
4. according to the manufacture method of the glass according to any one of claims 1 to 3 with fine structure, wherein, ultrasonic wave
Intensity is 0.10W/cm2~5.0W/cm2。
5. the manufacture method of the glass according to any one of claims 1 to 4 with fine structure, wherein, inorganic acid is
Nitric acid.
6. according to the manufacture method of the glass according to any one of claims 1 to 5 with fine structure, wherein, surface-active
The content of agent is 10ppm~800ppm.
7. according to the manufacture method of the glass according to any one of claims 1 to 6 with fine structure, wherein, surface-active
Agent is nonionic surfactant.
8. according to the manufacture method of the glass according to any one of claims 1 to 7 with fine structure, wherein, glass be containing
There is TiOs of 0.1 mole of % less than 5.0 moles of %2Glass with lower alkali content or alkali-free glass.
9. according to the manufacture method of the glass according to any one of claims 1 to 7 with fine structure, wherein, glass be containing
There are the glass with lower alkali content or alkali-free glass of the CuO of 0.1 mole of more than % and 2.0 mole of below %.
10. the manufacture method of the glass according to any one of claims 1 to 9 with fine structure, wherein, after etching work procedure
Fine structure is through hole in glass, and the angle of hole gradient is more than 80 degree.
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JP2015-170551 | 2015-08-31 | ||
PCT/JP2016/003931 WO2017038075A1 (en) | 2015-08-31 | 2016-08-29 | Method for producing glass with fine structure |
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US (1) | US20180340262A1 (en) |
JP (1) | JPWO2017038075A1 (en) |
KR (1) | KR20180048891A (en) |
CN (1) | CN107922254A (en) |
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WO (1) | WO2017038075A1 (en) |
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Also Published As
Publication number | Publication date |
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TW201722881A (en) | 2017-07-01 |
KR20180048891A (en) | 2018-05-10 |
JPWO2017038075A1 (en) | 2018-06-14 |
US20180340262A1 (en) | 2018-11-29 |
WO2017038075A1 (en) | 2017-03-09 |
TWI712568B (en) | 2020-12-11 |
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