CN107910297A - The manufacture method and back side illumination image sensor of back side illumination image sensor - Google Patents
The manufacture method and back side illumination image sensor of back side illumination image sensor Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 238000005286 illumination Methods 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000007769 metal material Substances 0.000 claims abstract description 28
- 238000002955 isolation Methods 0.000 claims description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 230000002093 peripheral effect Effects 0.000 claims description 29
- 238000000206 photolithography Methods 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 238000003466 welding Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000001259 photo etching Methods 0.000 abstract 3
- 238000000926 separation method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 230000000295 complement effect Effects 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
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- H—ELECTRICITY
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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- H—ELECTRICITY
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
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Abstract
Description
技术领域technical field
本发明涉及半导体制造技术领域，尤其涉及一种背照式图像传感器的制造方法及背照式图像传感器。The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a back-illuminated image sensor and the back-illuminated image sensor.
背景技术Background technique
所谓图像传感器，是指将光信号转换为电信号的装置。按照其依据的原理不同，可以区分为CCD(Charge Coupled Device，电荷耦合元件)图像传感器以及CMOS(Complementary Metal-Oxide Semiconductor，金属氧化物半导体元件)图像传感器。由于CMOS图像传感器是采用传统的CMOS电路工艺制作，因此可将图像传感器以及其所需要的外围电路加以整合，从而使得CMOS图像传感器具有更广的应用前景。The so-called image sensor refers to a device that converts optical signals into electrical signals. According to different principles, it can be divided into CCD (Charge Coupled Device, Charge Coupled Device) image sensor and CMOS (Complementary Metal-Oxide Semiconductor, metal oxide semiconductor element) image sensor. Since the CMOS image sensor is manufactured using a traditional CMOS circuit process, the image sensor and its required peripheral circuits can be integrated, so that the CMOS image sensor has a wider application prospect.
按照接收光线的位置的不同，CMOS图像传感器可以分为前照式图像传感器和背照式图像传感器。其中，与前照式图像传感器相比，背照式图像传感器最大的优化之处就是将元件内部的结构改变了，即将感光层的元件入射光路调转方向，让光线能从背面直射进去，避免了在前照式图像传感器中，光线会受到透镜和光电二极管之间的结构和厚度的影响，提高了光线接收的效能。CMOS image sensors can be classified into front-illuminated image sensors and back-illuminated image sensors according to the location where light is received. Among them, compared with the front-illuminated image sensor, the biggest optimization of the back-illuminated image sensor is to change the internal structure of the element, that is, to change the direction of the incident light path of the element of the photosensitive layer, so that the light can enter directly from the back, avoiding In a front-illuminated image sensor, light is affected by the structure and thickness between the lens and the photodiode, improving the efficiency of light reception.
在现有的背照式图像传感器中，入射光线穿过彩色滤光片之后，部分角度的光线会到达相邻的感光区，从而在相邻感光区的感光器件中产生了额外的光电信号，即发生了光线的串扰。为了防止光线之间的相互串扰，需要采用金属隔离层将透过不同颜色滤光片的光线相互隔离开。但是，现有的金属隔离层在制作过程中，需要沉积金属钨并进行五道光罩工艺，这不仅导致了制造背照式图像传感器成本的增加，而且增加了工艺复杂度，降低了生成效率。In the existing back-illuminated image sensor, after the incident light passes through the color filter, part of the angled light will reach the adjacent photosensitive area, thereby generating an additional photoelectric signal in the photosensitive device of the adjacent photosensitive area, That is, crosstalk of light occurs. In order to prevent crosstalk between light rays, it is necessary to use a metal isolation layer to isolate the light rays passing through different color filters from each other. However, in the manufacturing process of the existing metal isolation layer, metal tungsten needs to be deposited and five photomask processes are performed, which not only increases the cost of manufacturing the back-illuminated image sensor, but also increases the process complexity and reduces the production efficiency.
因此，如何降低背照式传感器的制造成本，简化工艺制造步骤，提高生成效率，是目前亟待解决的技术问题。Therefore, how to reduce the manufacturing cost of the back-illuminated sensor, simplify the process manufacturing steps, and improve the production efficiency is a technical problem to be solved urgently.
发明内容Contents of the invention
本发明提供一种背照式图像传感器的制造方法及背照式图像传感器，用以解决现有的背照式图像传感器制造成本高、制造工艺复杂的问题，以提高背照式图像传感器的生产效率。The invention provides a method for manufacturing a back-illuminated image sensor and the back-illuminated image sensor, which are used to solve the problems of high manufacturing cost and complicated manufacturing process of the existing back-illuminated image sensor, so as to improve the production of the back-illuminated image sensor efficiency.
为了解决上述问题，本发明提供了一种背照式图像传感器的制造方法，包括如下步骤：In order to solve the above problems, the present invention provides a method for manufacturing a back-illuminated image sensor, comprising the following steps:
提供一衬底，并采用光刻工艺在所述衬底表面定义像素区域以及围绕所述像素区域的周边区域；providing a substrate, and defining a pixel region and a peripheral region surrounding the pixel region on the surface of the substrate by using a photolithography process;
在所述衬底表面沉积金属材料，以在所述像素区域形成金属层、并在所述周边区域形成焊垫；Depositing a metal material on the surface of the substrate to form a metal layer in the pixel area and a welding pad in the peripheral area;
对所述金属层进行光刻处理，以在所述像素区域形成包括多个开口的隔离层。Photolithography is performed on the metal layer to form an isolation layer including a plurality of openings in the pixel area.
优选的，对所述金属层进行光刻处理，以在所述像素区域形成包括多个开口的隔离层的具体步骤包括：Preferably, the step of performing photolithography on the metal layer to form an isolation layer including a plurality of openings in the pixel area includes:
在所述金属层与所述焊垫表面沉积绝缘层；depositing an insulating layer on the surface of the metal layer and the pad;
对所述金属层以及覆盖于所述金属层表面的绝缘层进行光刻处理，以在所述像素区域形成包括多个开口的隔离层。performing photolithography treatment on the metal layer and the insulating layer covering the surface of the metal layer to form an isolation layer including a plurality of openings in the pixel area.
优选的，所述衬底包括硅基底、以及覆盖于所述硅基底表面的二氧化硅介质层，采用光刻工艺在所述衬底表面定义像素区域以及围绕所述像素区域的周边区域的具体步骤包括：Preferably, the substrate includes a silicon base and a silicon dioxide dielectric layer covering the surface of the silicon base, and a photolithography process is used to define a pixel area and a specific detail of a peripheral area surrounding the pixel area on the surface of the substrate. Steps include:
采用光刻工艺对与像素区域对应的所述二氧化硅介质层进行减薄处理。The silicon dioxide dielectric layer corresponding to the pixel area is thinned by photolithography.
优选的，经减薄处理的二氧化硅介质层的剩余厚度为 Preferably, the remaining thickness of the thinned silicon dioxide dielectric layer is
优选的，在所述衬底表面沉积金属材料的具体步骤包括：Preferably, the specific steps of depositing a metal material on the surface of the substrate include:
在所述底表面沉积厚度为的金属材料。Deposit thickness on the bottom surface is metal material.
优选的，采用光刻工艺在所述衬底表面定义像素区域以及围绕所述像素区域的周边区域之前还包括如下步骤：Preferably, the photolithographic process further includes the following steps before defining the pixel area and the peripheral area surrounding the pixel area on the surface of the substrate:
在所述衬底中形成硅通孔，使得所述硅通孔与周边区域对应。A through-silicon via is formed in the substrate such that the through-silicon via corresponds to a peripheral region.
优选的，对所述金属层以及覆盖于所述金属层表面的绝缘层进行光刻处理，以在所述像素区域形成包括多个开口的隔离层之后还包括如下步骤：Preferably, performing photolithography treatment on the metal layer and the insulating layer covering the surface of the metal layer, so as to further include the following steps after forming an isolation layer including a plurality of openings in the pixel region:
在所述绝缘层表面沉积钝化层；depositing a passivation layer on the surface of the insulating layer;
对与所述周边区域对应的绝缘层和钝化层进行光刻处理，以暴露所述焊垫。Photolithography is performed on the insulating layer and the passivation layer corresponding to the peripheral area to expose the pad.
优选的，所述金属材料为铝。Preferably, the metal material is aluminum.
为了解决上述问题，本发明还提供了一种背照式图像传感器，包括衬底，所述衬底包括像素区域以及围绕所述像素区域的周边区域，所述周边区域设置有焊垫，所述像素区域设置有包括多个开口的隔离层，所述焊垫与所述隔离层是通过金属材料在所述衬底表面的一次沉积过程中同时形成的。In order to solve the above problems, the present invention also provides a back-illuminated image sensor, including a substrate, the substrate includes a pixel area and a peripheral area surrounding the pixel area, the peripheral area is provided with a welding pad, the The pixel area is provided with an isolation layer including a plurality of openings, and the welding pad and the isolation layer are formed simultaneously through one deposition process of metal material on the surface of the substrate.
优选的，所述金属材料为铝。Preferably, the metal material is aluminum.
本发明提供的背照式图像传感器的制造方法及背照式图像传感器，焊垫与隔离层采用相同的材料制造而成，并且在一次金属沉积过程中同时形成，减少了背照式图像传感器的光刻次数，降低了背照式图像传感器制造成及工艺复杂度，提高了背照式图像传感器的生产效率。In the manufacturing method of the back-illuminated image sensor and the back-illuminated image sensor provided by the present invention, the welding pad and the isolation layer are made of the same material, and are formed simultaneously in one metal deposition process, which reduces the cost of the back-illuminated image sensor. The number of times of photolithography reduces the manufacturing and process complexity of the back-illuminated image sensor, and improves the production efficiency of the back-illuminated image sensor.
附图说明Description of drawings
附图1是本发明第一具体实施方式中背照式图像传感器的制造方法的流程框图；Accompanying drawing 1 is the flow block diagram of the manufacturing method of back-illuminated image sensor in the first specific embodiment of the present invention;
附图2A-2E是本发明第一具体实施方式中背照式图像传感器的制造方法的主要工艺示意图；Accompanying drawing 2A-2E are the main process schematic diagrams of the manufacturing method of the back-illuminated image sensor in the first specific embodiment of the present invention;
附图3是本发明第二具体实施方式中背照式图像传感器的结构示意图。Figure 3 is a schematic structural diagram of a back-illuminated image sensor in a second embodiment of the present invention.
具体实施方式Detailed ways
下面结合附图对本发明提供的背照式图像传感器的制造方法及背照式图像传感器的具体实施方式做详细说明。The manufacturing method of the back-illuminated image sensor provided by the present invention and the specific implementation of the back-illuminated image sensor will be described in detail below with reference to the accompanying drawings.
第一具体实施方式First Embodiment
本具体实施方式提供了一种背照式图像传感器的制造方法，附图1是本发明第一具体实施方式中背照式图像传感器的制造方法的流程框图，附图2A-2E是本发明第一具体实施方式中背照式图像传感器的制造方法的主要工艺示意图。如图1、2A-2E所示，本具体实施方式提供的背照式图像传感器的制造方法，包括如下步骤：This specific embodiment provides a method for manufacturing a back-illuminated image sensor. Accompanying drawing 1 is a flow chart of the method for manufacturing a back-illuminated image sensor in the first specific embodiment of the present invention, and accompanying drawings 2A-2E are the first embodiment of the present invention. A schematic diagram of the main process of the manufacturing method of the back-illuminated image sensor in a specific embodiment. As shown in FIGS. 1 and 2A-2E, the method for manufacturing a back-illuminated image sensor provided in this specific embodiment includes the following steps:
步骤S11，提供一衬底，并采用光刻工艺在所述衬底表面定义像素区域AA以及围绕所述像素区域AA的周边区域AB。其中，所述像素区域AA用于光线通过以显示图像；所述周边区域AB环绕所述像素区域设置，以界定所述像素区域AA的边界并布置连接线路。优选的，如图2A所示，所述衬底包括硅基底21、以及覆盖于所述硅基底21表面的二氧化硅介质层22。优选的，在所述衬底表面定义像素区域AA以及围绕所述像素区域AA的周边区域AB之前还包括如下步骤：在所述衬底中形成硅通孔(Through Silicon Via，TSV)23，使得所述硅通孔23与所述周边区域AB对应。便于之后在所述硅通孔23中设置布线，并且不影响所述像素区域AA的开口率。In step S11 , a substrate is provided, and a pixel area AA and a peripheral area AB surrounding the pixel area AA are defined on the surface of the substrate by a photolithography process. Wherein, the pixel area AA is used for light to pass through to display images; the peripheral area AB is arranged around the pixel area to define the boundary of the pixel area AA and arrange connection lines. Preferably, as shown in FIG. 2A , the substrate includes a silicon base 21 and a silicon dioxide dielectric layer 22 covering the surface of the silicon base 21 . Preferably, before defining the pixel area AA and the peripheral area AB surrounding the pixel area AA on the surface of the substrate, the following step is further included: forming a through silicon via (Through Silicon Via, TSV) 23 in the substrate, so that The TSV 23 corresponds to the peripheral area AB. It is convenient to arrange wiring in the TSV 23 later, and does not affect the aperture ratio of the pixel region AA.
具体来说，采用光刻工艺在所述衬底表面定义像素区域AA以及围绕所述像素区域AA的周边区域AB的具体步骤包括：采用光刻工艺对与所述像素区域AA对应的所述二氧化硅介质层22进行减薄处理，得到的所述衬底的结构如图2B所示。在对与所述像素区域AA对应的所述二氧化硅介质层22进行减薄处理的过程中，需要控制像素区域AA中剩余二氧化硅介质层22的厚度，这是因为：若与所述像素区域AA对应的剩余二氧化硅介质层22的厚度太薄，后续形成的隔离层会受到滤光片中金属离子的污染，影响光线隔离效果；若与所述像素区域AA对应的剩余二氧化硅介质层22的厚度太厚，则不能很好的对光线进行分离，会产生光线串扰的问题。因此，优选的，在本具体实施方式中，与所述像素区域AA对应、且经减薄处理后的二氧化硅介质层的剩余厚度为 Specifically, the specific steps of defining the pixel area AA and the peripheral area AB surrounding the pixel area AA on the surface of the substrate using a photolithography process include: using a photolithography process to define the two pixels corresponding to the pixel area AA The silicon oxide dielectric layer 22 is thinned, and the obtained structure of the substrate is shown in FIG. 2B . In the process of thinning the silicon dioxide dielectric layer 22 corresponding to the pixel area AA, it is necessary to control the thickness of the remaining silicon dioxide dielectric layer 22 in the pixel area AA, because: The thickness of the remaining silicon dioxide dielectric layer 22 corresponding to the pixel area AA is too thin, and the isolation layer formed subsequently will be polluted by metal ions in the filter, which will affect the light isolation effect; if the remaining silicon dioxide dielectric layer 22 corresponding to the pixel area AA If the thickness of the silicon dielectric layer 22 is too thick, the light cannot be separated well, and the problem of light crosstalk will occur. Therefore, preferably, in this specific implementation manner, the remaining thickness of the silicon dioxide dielectric layer corresponding to the pixel area AA and after thinning treatment is
步骤S12，在所述衬底表面沉积金属材料24，以在所述像素区域AA形成金属层241、并在所述周边区域AB形成焊垫242，得到的结构如图2C所示。本步骤中，通过在所述像素区域AA与所述周边区域AB同时沉积同种金属材料，不仅在所述周边区域AB形成了用于进行电路连接的焊垫242，而且还在所述像素区域AA形成了后续用于制造隔离层的金属层241。相较于现有技术中采用两步金属沉积工艺以沉积两种不同的金属材料、来分别形成焊垫和金属层的技术相比，本具体实施方式中所述金属层241与所述焊垫242采用同种金属材料构成，而且在同一步沉积工艺中沉积，不仅减少了沉积、光刻的步骤，而且以作为焊垫的金属材料来制造后续的隔离层，不需要增加额外的金属种类，降低了背照式图像传感器的制造成本。其中，所述金属材料24的种类，本领域技术人员可以根据实际需要进行选择。沉积的金属材料24的厚度既要满足封装时线路键合的要求以防止打线失败，又要满足后续填充彩色滤光片的深度要求以避免影响光的吸收率，优选的，在所述衬底表面沉积金属材料24的具体步骤包括：在所述衬底表面沉积厚度为的金属材料。为了使得所述金属材料既具有较好的导电性能，又具备较佳的遮光性能，优选的，所述金属材料24为铝。Step S12 , depositing a metal material 24 on the surface of the substrate to form a metal layer 241 in the pixel area AA and a welding pad 242 in the peripheral area AB. The obtained structure is shown in FIG. 2C . In this step, by simultaneously depositing the same metal material in the pixel area AA and the peripheral area AB, not only the welding pad 242 for circuit connection is formed in the peripheral area AB, but also in the pixel area AA forms the metal layer 241 that is subsequently used to fabricate the isolation layer. Compared with the technology in the prior art that uses a two-step metal deposition process to deposit two different metal materials to form the welding pad and the metal layer respectively, the metal layer 241 and the welding pad in this specific embodiment 242 is made of the same metal material and deposited in the same deposition process, which not only reduces the steps of deposition and photolithography, but also uses the metal material as the pad to manufacture the subsequent isolation layer without adding additional metal types. The manufacturing cost of the back-illuminated image sensor is reduced. Wherein, the type of the metal material 24 can be selected by those skilled in the art according to actual needs. The thickness of the deposited metal material 24 should not only meet the requirements of wire bonding during packaging to prevent wire bonding failure, but also meet the depth requirements of the subsequent filling of color filters to avoid affecting the light absorption rate. The specific steps of depositing the metal material 24 on the bottom surface include: depositing a thickness of metal material. In order to make the metal material not only have good electrical conductivity, but also have good light-shielding performance, preferably, the metal material 24 is aluminum.
步骤S13，对所述金属层241进行光刻处理，以在所述像素区域AA形成包括多个开口27的隔离层26，以得到如图2E所示的结构。具体来说，对位于所述像素区域AA的金属层进行光刻处理，以形成网格状结构的隔离层26。所述隔离层26中的开口27用于放置彩色滤光片。相邻彩色滤光片通过所述隔离层26隔开，以避免光线的串扰。In step S13 , photolithography is performed on the metal layer 241 to form an isolation layer 26 including a plurality of openings 27 in the pixel area AA to obtain the structure shown in FIG. 2E . Specifically, photolithography is performed on the metal layer located in the pixel area AA to form the isolation layer 26 with a grid structure. The opening 27 in the isolation layer 26 is used for placing color filters. Adjacent color filters are separated by the isolation layer 26 to avoid crosstalk of light.
为了对所述金属层以及所述焊垫进行保护，优选的，对所述金属层241进行光刻处理，以在所述像素区域AA形成包括多个开口27的隔离层26的具体步骤包括：In order to protect the metal layer and the welding pad, preferably, the specific steps of performing photolithography processing on the metal layer 241 to form the isolation layer 26 including a plurality of openings 27 in the pixel area AA include:
(S13-1)在所述金属层241与所述焊垫242表面沉积绝缘层25，如图2D所示；(S13-1) depositing an insulating layer 25 on the surface of the metal layer 241 and the pad 242, as shown in FIG. 2D;
(S13-2)对所述金属层241以及覆盖于所述金属层241表面的绝缘层25进行光刻处理，以在所述像素区域AA形成包括多个开口27的隔离层26。其中，所述绝缘层25的具体材质，可以是但不限于二氧化硅，本领域技术人员可以根据实际需要进行选择。(S13-2) Perform photolithography treatment on the metal layer 241 and the insulating layer 25 covering the surface of the metal layer 241 to form an isolation layer 26 including a plurality of openings 27 in the pixel area AA. Wherein, the specific material of the insulating layer 25 may be but not limited to silicon dioxide, which can be selected by those skilled in the art according to actual needs.
为了便于封装，优选的，对与所述像素区域AA对应的金属层241和绝缘层25进行光刻处理，以形成包括多个开口27的隔离层26之后还包括如下步骤：In order to facilitate packaging, preferably, the metal layer 241 and the insulating layer 25 corresponding to the pixel area AA are photolithographically processed to form the isolation layer 26 including a plurality of openings 27, and then the following steps are further included:
1)在所述绝缘层25表面沉积钝化层，以对所述隔离层26进行保护，防止所述隔离层26受到后续步骤的干扰；1) Depositing a passivation layer on the surface of the insulating layer 25 to protect the isolation layer 26 and prevent the isolation layer 26 from being disturbed by subsequent steps;
2)对于所述周边区域AB对应的绝缘层25和钝化层进行光刻处理，以暴露所述焊垫，便于所述焊垫与电路引线连接，以实现后续电信号的传输。2) Photolithography is performed on the insulating layer 25 and the passivation layer corresponding to the peripheral area AB to expose the pads, so as to facilitate the connection between the pads and the circuit leads, so as to realize the transmission of subsequent electrical signals.
本具体实施方式提供的背照式图像传感器的制造方法，焊垫与隔离层采用相同的材料制造而成，并且在一次金属沉积过程中同时形成，减少了背照式图像传感器的光刻次数，降低了背照式图像传感器制造成及工艺复杂度，提高了背照式图像传感器的生产效率。In the manufacturing method of the back-illuminated image sensor provided in this specific embodiment, the welding pad and the isolation layer are made of the same material, and are formed simultaneously in one metal deposition process, which reduces the number of photolithography of the back-illuminated image sensor, The manufacture and process complexity of the back-illuminated image sensor is reduced, and the production efficiency of the back-illuminated image sensor is improved.
第二具体实施方式Second specific implementation
本具体实施方式提供了一种背照式图像传感器，附图3是本发明第二具体实施方式中背照式图像传感器的结构示意图。如图3所示，本具体实施方式提供的背照式图像传感器，包括衬底，所述衬底包括像素区域AA以及围绕所述像素区域AA的周边区域AB，所述周边区域AB设置有焊垫38，所述像素区域AA设置有包括多个开口37的隔离层36，所述焊垫38与所述隔离层36是通过金属材料在所述衬底表面的一次沉积过程中同时形成的。This specific embodiment provides a back-illuminated image sensor, and FIG. 3 is a schematic structural diagram of the back-illuminated image sensor in the second specific embodiment of the present invention. As shown in FIG. 3 , the back-illuminated image sensor provided in this specific embodiment includes a substrate, the substrate includes a pixel area AA and a peripheral area AB surrounding the pixel area AA, and the peripheral area AB is provided with solder Pad 38 , the pixel area AA is provided with an isolation layer 36 including a plurality of openings 37 , and the pad 38 and the isolation layer 36 are formed simultaneously by one deposition process of metal material on the surface of the substrate.
为了使得所述金属材料既具有较好的导电性能，又具备较佳的遮光性能，优选的，所述金属材料为铝。In order to make the metal material not only have good electrical conductivity, but also have good light-shielding performance, preferably, the metal material is aluminum.
优选的，如图3所示，所述衬底包括硅基底31、以及覆盖于所述硅基底31表面的二氧化硅介质层32，且在所述衬底中形成硅通孔(Through Silicon Via，TSV)33，使得所述硅通孔33与所述周边区域AB对应。便于之后在所述硅通孔33中设置布线，并且不影响所述像素区域AA的开口率。Preferably, as shown in FIG. 3, the substrate includes a silicon base 31 and a silicon dioxide dielectric layer 32 covering the surface of the silicon base 31, and a through silicon via (Through Silicon Via) is formed in the substrate. , TSV) 33, so that the TSV 33 corresponds to the peripheral area AB. It is convenient to arrange wiring in the TSV 33 later, and does not affect the aperture ratio of the pixel area AA.
为了避免所述隔离层36受到滤光片中金属离子的污染，影响光线隔离效果，且使得所述隔离层36能够很好的对光线进行分离，避免产生光线串扰的问题，优选的，在本具体实施方式中，与所述像素区域AA对应的二氧化硅介质层32的厚度为 In order to prevent the isolation layer 36 from being polluted by metal ions in the optical filter, affecting the light isolation effect, and enabling the isolation layer 36 to separate the light well, avoiding the problem of light crosstalk, preferably, in this In a specific embodiment, the thickness of the silicon dioxide dielectric layer 32 corresponding to the pixel area AA is
为了既满足封装时线路键合的要求以防止打线失败，又满足后续填充彩色滤光片的深度要求以避免影响光的吸收率，优选的，在所述衬底表面沉积的金属材料的厚度为 In order to meet the requirements of wire bonding during packaging to prevent wire-bonding failure, and to meet the depth requirements of subsequent filling color filters to avoid affecting the light absorption rate, preferably, the thickness of the metal material deposited on the surface of the substrate for
为了对所述隔离层36与所述焊垫38进行保护，优选的，所述隔离层36与所述焊垫38表面覆盖有绝缘层35。其中，所述绝缘层35的具体材质，可以是但不限于二氧化硅，本领域技术人员可以根据实际需要进行选择。In order to protect the isolation layer 36 and the welding pad 38 , preferably, the surface of the isolation layer 36 and the welding pad 38 is covered with an insulating layer 35 . Wherein, the specific material of the insulating layer 35 may be but not limited to silicon dioxide, which can be selected by those skilled in the art according to actual needs.
为了对网格状的隔离层36进行保护，避免所述隔离层36在所述背照式图像传感器的制造过程中受到后续步骤的干扰，优选的，在所述绝缘35的表面还覆盖有钝化层。更优选的，在所述周边区域AB设置有连接孔，所述连接孔贯穿所述绝缘层35与所述钝化层，以暴露所述焊垫38，便于所述焊垫38在封装过程中与电路引线连接，以实现电信号的传输。In order to protect the grid-shaped isolation layer 36 and prevent the isolation layer 36 from being disturbed by subsequent steps in the manufacturing process of the back-illuminated image sensor, preferably, the surface of the insulation 35 is also covered with a blunt layers. More preferably, a connection hole is provided in the peripheral region AB, and the connection hole penetrates through the insulating layer 35 and the passivation layer to expose the solder pad 38, so that the solder pad 38 can be easily processed during the packaging process. It is connected with circuit leads to realize the transmission of electrical signals.
本具体实施方式提供的背照式图像传感器，焊垫与隔离层采用相同的材料制造而成，并且在一次金属沉积过程中同时形成，减少了背照式图像传感器的光刻次数，降低了背照式图像传感器制造成及工艺复杂度，提高了背照式图像传感器的生产效率。In the back-illuminated image sensor provided in this specific embodiment, the welding pad and the isolation layer are made of the same material, and are formed simultaneously in one metal deposition process, which reduces the number of photolithography of the back-illuminated image sensor and reduces the back-illuminated image sensor. The manufacture and process complexity of the illuminated image sensor improves the production efficiency of the back-illuminated image sensor.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above is only a preferred embodiment of the present invention, it should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications should also be considered Be the protection scope of the present invention.
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